CN212381457U

CN212381457U - Metallized carrier plate

Info

Publication number: CN212381457U
Application number: CN202021194059.6U
Authority: CN
Inventors: 叶宇诚; 徐建卫; 汪鹏
Original assignee: Shanghai Xian Photoelectric Technology Co ltd
Current assignee: Shanghai Xian Photoelectric Technology Co ltd
Priority date: 2020-06-24
Filing date: 2020-06-24
Publication date: 2021-01-19
Anticipated expiration: 2030-06-24

Abstract

The utility model discloses a metallized carrier plate, which comprises an insulating medium substrate, wherein two grooves are arranged at the central part of opposite side wall surfaces of the insulating medium substrate, two grooves are symmetrically arranged, two side metal layers are arranged on the two grooves, two side metal layers are symmetrically arranged, a top metal layer is arranged on the upper wall surface of the insulating medium substrate, a wiring groove is arranged on the top metal layer, a laser pad is arranged on the wiring groove, the lower wall surface of the laser pad is attached to the upper wall surface of the insulating medium substrate, and an on-chip resistor is arranged on the upper wall surface of the top metal layer. The reliability is high, the production cost is guaranteed, and the large-scale mass production is facilitated.

Description

Metallized carrier plate

Technical Field

The utility model relates to an optical communication technical field specifically is a metallization support plate.

Background

In the optical transceiver module of the optical communication module, a laser, a lens, a resistor, a capacitor and other elements are assembled on a metalized carrier plate, so that electrical connection and assembly structural parts are provided for the elements, and a certain heat dissipation effect is achieved. Generally, a metalized carrier plate uses an insulating medium substrate with good heat conduction, and metal layers are formed on the upper surface and the lower surface of the substrate. Generally, the metal layer on the upper surface of the carrier needs to be patterned for the mounting and electrical interconnection of components, and the metal layer on the lower surface of the carrier serves as a ground plane, so that conductive vias are formed in the carrier so that the ground traces on the upper surface can be directly connected to the ground plane layer on the lower surface. Thus, the manufactured metallized carrier plate has the following characteristics: the metal interconnection has excellent conductive performance, very small high-frequency loss, excellent electrical insulation performance of the medium, excellent heat dissipation performance and the like. Therefore, the metallized carrier plate has become an important solution for the electrical interconnection and assembly structure technology of high-power high-frequency electronic circuits, and is the preferred solution for laser components in high-speed optical modules.

The ground signal line on the upper surface of the carrier plate needs to be connected to the ground plane layer on the lower surface, and a through hole needs to be manufactured. Firstly, a through hole penetrating through two surfaces of a dielectric substrate is required to be manufactured on the dielectric substrate, then copper is plated on the through hole by a chemical sputtering method to form a through hole, or conductive slurry is filled into the through hole, for example: and silver paste, aluminum paste, conductive graphite paste and the like form the solid interconnection holes. And finally, metal layers are manufactured on the upper surface and the lower surface of the medium substrate to form a circuit, so that the ground signal line on the upper surface is connected to the ground plane through the through hole.

The current method for manufacturing the through hole comprises the following steps: the method comprises the steps of punching holes with the smallest diameter of about 100 mu m by using raw porcelain, and then sintering to form a medium substrate with holes. However, the sintering process has a problem of shrinkage, the shape of the sintered holes is distorted, the uniformity is poor in mass application, and the through holes need to be covered with metal with a diameter of more than 50um to ensure reliable electrical connection. Alternatively, holes with a minimum diameter of about 80um are formed directly in the dielectric substrate using drilling or laser drilling. The method has the problems of poor quality and high roughness of the formed hole wall and edge breakage, impurity residues are left on the hole wall by laser drilling, and when a large amount of hole arrays need to be manufactured, the cost is increased sharply, so that the method is not favorable for mass production.

Accordingly, the present invention is directed to a method for processing a semiconductor device.

SUMMERY OF THE UTILITY MODEL

The utility model provides a not enough to prior art, the utility model provides a metallization support plate has solved the ground connection through-hole shape after present sintering and can take place the distortion, and the uniformity is poor when using in a large number, and the pore wall quality after drilling or laser punching is poor, and roughness is big, still can have the problem of collapsing the limit, and laser punching can leave the impurity residue at the pore wall, and when needs preparation a large amount of hole arrays, the cost can sharply increase, is unfavorable for the problem of mass production.

In order to achieve the above purpose, the utility model discloses a following technical scheme realizes: the utility model provides a metallization support plate, includes the insulating medium substrate, two recesses have been seted up at the relative lateral wall face central point of insulating medium substrate, two the recess symmetry is seted up, two be equipped with two side metal levels on the recess, two the side metal level symmetry sets up, the upper wall surface of insulating medium substrate is equipped with the top layer metal level, be equipped with the trough on the top layer metal level, be equipped with the laser pad on the trough, wall surface laminating is on the insulating medium substrate under the laser pad, resistor on the wall is installed to the upper wall surface of top layer metal level, the wall is equipped with the bottom metal level under the insulating medium substrate.

Preferably, the upper ends of the two side metal layers are attached to the lower wall surface of the top metal layer, and the lower ends of the two side metal layers are attached to the upper wall surface of the bottom metal layer.

Preferably, the insulating medium substrate is of a rectangular structure, the length dimension of the insulating medium substrate is 1.0 mm-3.0 mm, and the width dimension of the insulating medium substrate is 1.0 mm-3.0 mm.

Preferably, the thickness of the two side metal layers, the top metal layer and the bottom metal layer is 0.5-2.0 μm, and the height of the upper wall of the top metal layer from the lower wall of the bottom metal layer is 0.16-0.5 mm.

Preferably, the length of each of the two grooves is 0.4-2.0 mm, and the width of each of the two grooves is 0.03-0.1 mm.

Preferably, the laser bonding pad is of a rectangular structure.

Advantageous effects

The utility model provides a metallization support plate possesses following beneficial effect: the side surface of the carrier plate is metallized to form a side surface metal layer, so that the grounding layers on the upper surface and the lower surface are connected together, the manufacture of grounding through holes is avoided, the processing is simple, the production efficiency is high, the quality of products is ensured, the reliability is high, the production cost is ensured, and the large-scale mass production is facilitated.

Drawings

Fig. 1 is a schematic view of a top view structure of a metallized carrier plate according to the present invention.

Fig. 2 is a schematic view of a front view cross-sectional structure of a metallized carrier plate according to the present invention.

Fig. 3 is a schematic left-side sectional view of a metallized carrier plate according to the present invention.

Fig. 4 is a schematic bottom view of a metallized carrier plate according to the present invention.

Fig. 5 is a schematic view of a front view structure of a metallized carrier plate before cutting.

In the figure: 1-an insulating dielectric substrate; 2-a groove; 3-a lateral metal layer; 4-top metal layer; 5-a wiring groove; 6-laser pad; 7-an on-chip resistor; 8-bottom metal layer.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-5, the present invention provides a technical solution: a metallized carrier plate.

Example (b): the following working principles, detailed connecting means thereof, and the following main descriptions of the working principles and processes are well known in the art, and will be referred to by those skilled in the art for the specific connection and operation sequence of the components in this application.

The utility model provides a metallization support plate, including insulating medium substrate 1, two recesses 2 have been seted up to the relative lateral wall face central point of insulating medium substrate 1, two recesses 2 symmetry are seted up, be equipped with two side metal levels 3 on two recesses 2, two side metal levels 3 symmetry set up, wall is equipped with top layer metal level 4 on the insulating medium substrate 1, be equipped with trough 5 on the top layer metal level 4, be equipped with laser instrument pad 6 on the trough 5, wall on the wall is laminated in insulating medium substrate 1 to the lower wall of laser instrument pad 6, resistor 7 on the wall is installed to the top layer metal level 4, wall is equipped with bottom metal level 8 under the insulating medium substrate 1.

The top metal layer 4 is mainly used for signal routing, the bottom metal layer 8 is a ground plane, the laser pad 6 is manufactured on the upper surface of the top metal layer 4 and is specially used for welding a laser, as preferred, further, the laser pad 6 is of a rectangular structure, the laser pad 6 is gold-tin solder, the resistor 7 on the chip is an important element of a circuit and provides matching for a high-frequency circuit, the performance of the circuit is improved, as preferred, further, the length size of each of the two grooves 2 is 0.4 mm-2.0 mm, the width size of each of the two grooves 2 is 0.03 mm-0.1 mm, and the size of the two side metal layers 3 can be designed according to specific design requirements; the on-chip resistor 7 is made of a material including, but not limited to, tantalum nitride, and preferably, upper ends of the two side metal layers 3 are attached to a lower wall surface of the top metal layer 4, lower ends of the two side metal layers 3 are attached to an upper wall surface of the bottom metal layer 8, and the two side metal layers 3 connect the top metal layer 4 and the bottom metal layer 8. The insulating medium substrate 1 is made of a material including, but not limited to, a ceramic insulating medium such as aluminum nitride, aluminum oxide, etc., preferably, further, preferably, the thickness dimensions of the two side metal layers 3, the top metal layer 4, and the bottom metal layer 8 are all 0.5 μm to 2.0 μm, and the material of the side metal layers 3, the top metal layer 4, and the bottom metal layer 8 includes, but not limited to, a metal material such as gold or silver.

A plurality of unit carrier plates can be manufactured in an array mode on the medium original sheet, and the size of one unit carrier plate is designed as follows: the length is 1.0-3.0 mm, the width is 1.0-3.0 mm, the thickness is 0.16-0.5 mm, when manufacturing, firstly, on a medium original sheet with the thickness of about 10cm multiplied by 10cm, a rectangular closed groove with the total width of 0.06-0.20 mm and the length of 0.4-2.0 mm is dug out at the position where the side metal layer 3 needs to be arranged by using a drilling process. Secondly, adopting an etching process to manufacture a wiring groove 5 on the top metal layer 4 to form a required pattern circuit, ensuring that a grounding wire is connected with the side wall metal when the wiring groove 5 is designed, then manufacturing a laser pad 6 on the wiring groove 5, and adopting 80/20 formula proportion for the laser pad 6. And finally, cutting the carrier plate along the mechanical boundary of the insulating medium substrate 1 of one unit to obtain the required metalized carrier plate.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation. The use of the phrase "comprising one of the elements does not exclude the presence of other like elements in the process, method, article, or apparatus that comprises the element.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A metallized carrier plate comprises an insulating medium substrate (1), and is characterized in that two grooves (2) are formed in the center of opposite side wall surfaces of the insulating medium substrate (1), the two grooves (2) are symmetrically formed, two side metal layers (3) are arranged on the two grooves (2), the two side metal layers (3) are symmetrically arranged, the upper wall surface of the insulating medium substrate (1) is provided with a top metal layer (4), the top metal layer (4) is provided with a wiring groove (5), a laser bonding pad (6) is arranged on the wiring groove (5), the lower wall surface of the laser bonding pad (6) is attached to the upper wall surface of the insulating medium substrate (1), an on-chip resistor (7) is arranged on the upper wall surface of the top metal layer (4), and a bottom metal layer (8) is arranged on the lower wall surface of the insulating medium substrate (1).

2. The metallization carrier according to claim 1, wherein the upper ends of the two side metal layers (3) are attached to the lower wall of the top metal layer (4), and the lower ends of the two side metal layers (3) are attached to the upper wall of the bottom metal layer (8).

3. The metallization carrier according to claim 1, wherein the insulating dielectric substrate (1) has a rectangular structure, the insulating dielectric substrate (1) has a length dimension of 1.0mm to 3.0mm, and the insulating dielectric substrate (1) has a width dimension of 1.0mm to 3.0 mm.

4. The metallization carrier according to claim 1, wherein the two lateral metal layers (3), the top metal layer (4) and the bottom metal layer (8) have a thickness dimension of 0.5 μm to 2.0 μm, and the height dimension of the upper wall surface of the top metal layer (4) from the lower wall surface of the bottom metal layer (8) is 0.16mm to 0.5 mm.

5. The metallization carrier according to claim 1, wherein the two grooves (2) each have a length dimension of 0.4mm to 2.0mm and the two grooves (2) each have a width dimension of 0.03mm to 0.1 mm.

6. A metallized carrier plate according to claim 1 characterized in that the laser pads (6) have a rectangular configuration.