CN212365970U - Trench RC-IGBT device structure - Google Patents
Trench RC-IGBT device structure Download PDFInfo
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- CN212365970U CN212365970U CN202021348573.0U CN202021348573U CN212365970U CN 212365970 U CN212365970 U CN 212365970U CN 202021348573 U CN202021348573 U CN 202021348573U CN 212365970 U CN212365970 U CN 212365970U
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- 239000012535 impurity Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000003860 storage Methods 0.000 claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 238000001259 photo etching Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 108091006146 Channels Proteins 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Abstract
The utility model discloses a slot RC-IGBT device structure mainly includes RC-IGBT device body, and this integrated IGBT of RC-IGBT device body and FRD are in an organic whole, RC-IGBT device body mainly includes N type substrate and sets up the N type charge storage layer at N type substrate top, and the top of N type charge storage layer is provided with the P well layer, and the upper surface of P well layer is provided with a plurality of montage contact openings, the contact hole includes adjacent crisscross IGBT contact hole and the FRD contact hole that sets up, and is provided with the slot that runs through P well layer and N type charge storage layer and extend to N type substrate inside between adjacent IGBT contact hole and FRD contact hole, the slot includes the oxide layer and sets up the polycrystalline silicon in the oxide layer, and the bottom cross section of slot is semi-circular; and an N-type field stop layer formed by staggered arrangement of P-type impurities and N-type impurities is arranged at the bottom of the N-type substrate.
Description
Technical Field
The utility model relates to a semiconductor device makes technical field, concretely relates to slot RC-IGBT device structure.
Background
The main circuit in modern power electronic circuit adopts either a thyristor switched off by current conversion or a novel power electronic device with self-turn-off capability, such as GTO, MOSFET, IGBT, etc., and needs a fast power recovery diode connected in parallel with it to reduce the charging time of the main switching device capacitor by the reactive current in the load, and at the same time, to suppress the high voltage induced by the parasitic inductance when the load current is instantaneously reversed.
As a main representative of a new power semiconductor device, the IGBT is widely used in the fields of industry, information, new energy, medicine, transportation, military, and aviation. At present, the voltage resistance of the IGBT device on the market reaches 6500V, the current of a single tube core reaches 200A, and the frequency reaches 300 KHz. In the high-frequency high-power field, no other device can replace the high-frequency high-power field. With the continuous progress of semiconductor materials and processing technologies, IGBT devices adopting the trench technology have become mainstream products. Meanwhile, the requirement on the electrical performance of the trench IGBT device is higher and higher. In practical application, in order to simplify the packaging process and the size of a finished product, the IGBT and the FRD need to be integrated, and due to structural limitation of the existing RC-IGBT device, the FRD cannot be optimized independently under the condition that the performance of the IGBT is not affected.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model lies in, to the above-mentioned defect of prior art, provide a process control simply, but IGBT and FRD integrated with a chip on and optimize the slot RC-IGBT device structure of FRD performance and manufacturing method thereof.
The utility model aims to complete the technical proposal that a trench RC-IGBT device structure mainly comprises an RC-IGBT device body, the RC-IGBT device body integrates the IGBT and the FRD into a whole, and utilizes the single cell of the IGBT which is passive to form the FRD device, the RC-IGBT device body mainly comprises an N-type substrate and an N-type charge storage layer arranged on the top of the N-type substrate, a P-well layer is arranged on the top of the N-type charge storage layer, a plurality of groups of contact holes are arranged on the upper surface of the P-well layer, the contact holes comprise IGBT contact holes and FRD contact holes which are adjacently and alternately arranged, and a groove which penetrates through the P well layer and the N-type charge storage layer and extends to the inside of the N-type substrate is arranged between the adjacent IGBT contact hole and the FRD contact hole, the groove comprises an oxide layer and polycrystalline silicon arranged in the oxide layer, and the cross section of the bottom of the groove is semicircular; and an N-type field stop layer formed by P-type impurities or staggered arrangement of the P-type impurities and the N-type impurities is arranged at the bottom of the N-type substrate.
Further, the thickness of the P well layer is larger than that of the N-type charge storage layer, and a deep P well which is in contact with the N-type substrate is arranged in the RC-IGBT device body.
A manufacturing method of a trench RC-IGBT device structure comprises the following steps:
(1) defining an active area on the selected N-type substrate or the selected zone melting sheet, and growing a field area oxide layer;
(2) selectively defining a deep P well or not according to the design of a terminal structure and an active region unit cell;
(3) photoetching a groove pattern, and etching the silicon substrate by a dry method, wherein the groove simultaneously defines an active area grid groove and a groove for isolating the current sampling IGBT;
(4) growing a grid oxide layer, depositing in-situ doped polycrystalline silicon material to fill the groove, then photoetching a grid pattern, and etching the polycrystalline silicon to form a grid with a top layer structure;
(5) injecting P-type impurities and diffusing to form a shallow P well as a channel region, wherein the shallow P well channel region can be formed before the groove is defined;
(6) respectively injecting a diffusion IGBT active channel region and a passive unit cell region by adding a P-type impurity injection layer, and adjusting the doping concentration of an integrated FRD anode to optimize the FRD characteristic;
(7) photoetching an N-type source region and injecting N-type impurities, then depositing an oxide layer or silicon nitride and annealing for densification, photoetching a contact hole, and etching the P well region of all the cells formed before the insulating layer is exposed and the silicon surface of the N-type source region;
(8) injecting P-type impurities and activating to ensure ohmic contact between the P well region and the top metal, sputtering the top metal, photoetching the top metal, depositing a passivation layer, photoetching the passivation layer, and alloying to finish the manufacture of the top structure;
(9) the back of the silicon chip is thinned to a specific thickness, P-type or N-type and P-type impurities are injected into the back, an IGBT collector region or an FS-IGBT with a field stop layer is formed through low-temperature annealing or laser annealing, and finally back metal is deposited through a sputtering or evaporation method.
The utility model has the advantages of: the utility model discloses process control is simple, it is compatible with general ditch slot type IGBT technology, and adopted RC-IGBT device structure and the manufacturing method that can optimize the FRD performance alone, this manufacturing method utilizes the invalid active area of IGBT to form the FRD positive pole, P type impurity concentration and diffusion appearance through adjusting the passive unit cell region of IGBT optimize FRD device characteristic, because the unit cell (dummy cell) region that is passive at IGBT has formed the FRD part, therefore this kind of RC-IGBT's switching speed is very fast, it is single tube specially adapted rapidity application.
Drawings
Fig. 1 is a schematic cross-sectional structure diagram of the trench RC-IGBT device according to the present invention;
FIG. 2 is a schematic top view of the structure of FIG. 1;
fig. 3 is a schematic cross-sectional structure diagram of another embodiment of the trench RC-IGBT device according to the present invention;
fig. 4 is a schematic top view of fig. 3.
Detailed Description
To make the objects, technical solutions and advantages of the present invention more clearly understood by those skilled in the art, the present invention will be further described with reference to the accompanying drawings and examples.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "left", "right", "inner", "outer", "lateral", "vertical", and the like are the directions or positional relationships shown in the drawings, and are only for convenience of description of the present invention, and do not indicate or imply that the device or element referred to must have a specific direction, and therefore, should not be construed as limiting the present invention.
In order to improve the integration level of the trench IGBT device packaging process, an IGBT and FRD integrated and single chip technology RC-IGBT is available. However, in the existing device structure, the FRD anode and the IGBT emitter share a P-type channel, so that the anode doping and the diffusion junction depth of the FRD cannot be independently adjusted. The utility model provides a device structure capable of adjusting FRD anode doping and an implementation method; the conventional structure is that an FRD anode and an IGBT emitter share a P-type channel, and the doping concentration and junction depth of the FRD anode cannot be independently adjusted.
As shown in fig. 1-4, the trench RC-IGBT device structure of the present invention mainly comprises a RC-IGBT device body, which integrates an IGBT and an FRD into a whole, includes an IGBT and an FRD structure that are integrally arranged side by side, and forms an FRD device by using a single cell that is not driven by the IGBT, the RC-IGBT device body mainly comprises an N-type substrate 1 and an N-type charge storage layer 2 arranged on top of the N-type substrate 1, a P-well layer 3 is arranged on top of the N-type charge storage layer 2, a plurality of group contact holes 4 are arranged on the upper surface of the P-well layer 3, the contact holes 4 include adjacent and staggered IGBT contact holes and FRD contact holes, and a trench 5 that penetrates through the P-well layer 3 and the N-type charge storage layer 2 and extends into the N-type substrate 1 is arranged between the adjacent IGBT contact holes and the FRD contact holes, the trench 5 includes an oxide layer 6 and a polysilicon 7 arranged in the oxide layer 6, the cross section of the bottom of the groove 5 is semicircular; the bottom of the N-type substrate 1 is provided with an N-type field stop layer 8 formed by P-type impurities or staggered arrangement of P-type impurities and N-type impurities.
Referring to fig. 3, the thickness of the P-well layer is greater than that of the N-type charge storage layer, and a deep P-well in contact with the N-type substrate is arranged in the RC-IGBT device body.
A manufacturing method of a trench RC-IGBT device structure comprises the following steps:
(1) defining an active area on the selected N-type substrate or the selected zone melting sheet, and growing a field area oxide layer;
(2) selectively defining a deep P well or not according to the design of a terminal structure and an active region unit cell;
(3) photoetching a groove pattern, and etching the silicon substrate by a dry method, wherein the groove simultaneously defines an active area grid groove and a groove for isolating the current sampling IGBT;
(4) growing a grid oxide layer, depositing in-situ doped polycrystalline silicon material to fill the groove, then photoetching a grid pattern, and etching the polycrystalline silicon to form a grid with a top layer structure;
(5) injecting P-type impurities and diffusing to form a shallow P well as a channel region, wherein the shallow P well channel region can be formed before the groove is defined;
(6) respectively injecting a diffusion IGBT active channel region and a passive unit cell region by adding a P-type impurity injection layer, and adjusting the doping concentration of an integrated FRD anode to optimize the FRD characteristic;
(7) photoetching an N-type source region and injecting N-type impurities, then depositing an oxide layer or silicon nitride and annealing for densification, photoetching a contact hole, and etching the P well region of all the cells formed before the insulating layer is exposed and the silicon surface of the N-type source region;
(8) injecting P-type impurities and activating to ensure ohmic contact between the P well region and the top metal, sputtering the top metal, photoetching the top metal, depositing a passivation layer, photoetching the passivation layer, and alloying to finish the manufacture of the top structure;
(9) the back of the silicon chip is thinned to a specific thickness, P-type or N-type and P-type impurities are injected into the back, an IGBT collector region or an FS-IGBT with a field stop layer is formed through low-temperature annealing or laser annealing, and finally back metal is deposited through a sputtering or evaporation method.
The utility model discloses process control is simple, compatible with general slot type IGBT technology, utilize the passive single cell of IGBT preparation FRD device, and adopted RC-IGBT device structure and the preparation method that can optimize the FRD performance alone, this preparation method utilizes the invalid active area of IGBT to form the FRD positive pole, P type impurity concentration and diffusion appearance through adjusting the passive single cell region of IGBT optimize FRD device characteristic, because the passive single cell (dummy cell) region of IGBT has formed the FRD part, therefore this kind of RC-IGBT's switching speed is very fast, it is quick application field to encapsulate into single tube specially adapted.
The specific embodiments described herein are merely illustrative of the principles of the present invention and its efficacy, and are not intended to limit the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Therefore, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical idea of the present invention shall be covered by the claims of the present invention.
Claims (2)
1. A trench RC-IGBT device structure mainly comprises an RC-IGBT device body, wherein the RC-IGBT device body integrates an IGBT and an FRD, and an FRD device is formed by using a single cell with an IGBT passive source, and the trench RC-IGBT device structure is characterized in that: the RC-IGBT device body mainly comprises an N-type substrate and an N-type charge storage layer arranged on the top of the N-type substrate, a P-well layer is arranged on the top of the N-type charge storage layer, a plurality of groups of contact holes are formed in the upper surface of the P-well layer, the contact holes comprise IGBT contact holes and FRD contact holes which are adjacently arranged in a staggered mode, a groove which penetrates through the P-well layer and the N-type charge storage layer and extends to the inside of the N-type substrate is arranged between the adjacent IGBT contact holes and the FRD contact holes, the groove comprises an oxidation layer and polycrystalline silicon arranged in the oxidation layer, and the cross section of the bottom of the groove is semicircular; and an N-type field stop layer formed by P-type impurities or staggered arrangement of the P-type impurities and the N-type impurities is arranged at the bottom of the N-type substrate.
2. The trench RC-IGBT device structure of claim 1, wherein: the thickness of the P well layer is larger than that of the N-type charge storage layer, and a deep P well which is in contact with the N-type substrate is arranged in the RC-IGBT device body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021348573.0U CN212365970U (en) | 2020-07-10 | 2020-07-10 | Trench RC-IGBT device structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021348573.0U CN212365970U (en) | 2020-07-10 | 2020-07-10 | Trench RC-IGBT device structure |
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| Publication Number | Publication Date |
|---|---|
| CN212365970U true CN212365970U (en) | 2021-01-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202021348573.0U Active CN212365970U (en) | 2020-07-10 | 2020-07-10 | Trench RC-IGBT device structure |
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| CN (1) | CN212365970U (en) |
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- 2020-07-10 CN CN202021348573.0U patent/CN212365970U/en active Active
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Address after: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee after: Star Semiconductor Co.,Ltd. Address before: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee before: STARPOWER SEMICONDUCTOR Ltd. |