CN212247204U - Heating device for chemical vapor deposition treatment - Google Patents
Heating device for chemical vapor deposition treatment Download PDFInfo
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- CN212247204U CN212247204U CN202021165215.6U CN202021165215U CN212247204U CN 212247204 U CN212247204 U CN 212247204U CN 202021165215 U CN202021165215 U CN 202021165215U CN 212247204 U CN212247204 U CN 212247204U
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Abstract
The utility model provides a heating device for be used for chemical vapor deposition to handle, include: a housing enclosing a defined chamber; a carrier disposed in the chamber; a heating assembly adapted to generate heat to cause a temperature rise in the chamber; and the heat transfer assembly is arranged in the chamber and is suitable for conducting heat from the heating assembly. The utility model discloses can improve the even degree of temperature of heating device when the heating to improve the effect that chemical vapor deposition handled.
Description
Technical Field
The utility model relates to a technical field that the silicon chip was made particularly, relates to a heating device for be used for chemical vapor deposition to handle.
Background
The silicon chip has wide application prospect in the fields of solar cell production, semiconductor equipment manufacturing and the like.
The Plasma Enhanced Chemical Vapor Deposition (hereinafter referred to as PECVD) is used for surface treatment of silicon wafers and is an important means for improving the performance of the silicon wafers.
When the chemical vapor deposition treatment is carried out, a heating device is needed to heat the silicon wafer. One of the disadvantages of the related art is that the temperature uniformity of the silicon wafer heated by the heating device is not ideal enough, and thus the production quality of the silicon wafer is difficult to be ensured.
SUMMERY OF THE UTILITY MODEL
The present invention aims to solve at least one of the above technical problems.
Therefore, the utility model aims to provide a heating device for chemical vapor deposition treatment.
In order to realize the purpose of the utility model, the embodiment of the utility model provides a heating device for chemical vapor deposition handles, include: a housing enclosing a defined chamber; the carrier is arranged in the chamber and is suitable for bearing a processed workpiece; the heating assembly is suitable for generating heat so as to increase the temperature of the processed workpiece; and the heat transfer assembly is arranged in the chamber and is suitable for conducting heat from the heating assembly.
The arrangement of the heat transfer component can not only improve the heat preservation effect in the cavity and improve the heating efficiency of the heating device, but also promote the uniform distribution of the temperature in the cavity, and ensure that the temperature of the silicon wafer at each position in the cavity and the temperature of each area on the same silicon wafer tend to be the same. Therefore, the heating device capable of uniformly heating can be provided by the embodiment, so that the purposes of ensuring the productivity and improving the product quality are achieved.
In addition, the technical solution provided by the above embodiment of the present invention can also have the following additional technical features:
in the above technical solution, the heat transfer assembly includes: one or more sheet metal heat transfer assemblies; wherein the plate-shaped metal heat transfer component is connected with the shell.
The metal heat transfer component with the plate-shaped structure has high heat conduction efficiency and low cost, is easy to process and is convenient to mount and assemble with the inner wall of the shell.
In any of the above technical solutions, the heating assembly includes: the first heating assembly is arranged on any side of the carrier; the second heating component is arranged on the other side of the carrier opposite to any side.
First heating element and second heating element mutually support for the heating device's of this embodiment intensification efficiency and temperature distribution homogeneity all can be effectively guaranteed.
In any of the above solutions, the heat transfer assembly includes: the first heat transfer assembly is arranged on the side part of the shell; and the second heat transfer component is arranged on the bottom of the shell.
The first heat transfer assembly and the second heat transfer assembly of the embodiment are matched with the first heating assembly and the second heating assembly together, so that the purposes of heating, heat transfer and heat preservation of the carrier and the silicon wafer on the carrier in multiple directions are achieved.
In any of the above technical solutions, the first heating assembly includes: one or more sheet metal heating assemblies; wherein, the plate-shaped metal heating component is arranged in the cavity and is connected with the shell.
The metal heating component with the plate-shaped structure is high in temperature rising speed, low in cost, small in size, easy to process and convenient to install and assemble with the inner wall of the shell.
In any of the above technical solutions, the second heating assembly includes: one or more tubular heating assemblies; wherein at least a portion of the tubular heating assembly extends into the chamber and the tubular heating assembly is removably coupled to the housing.
On one hand, the embodiment can ensure the airtight condition of the chamber, so that the chamber can be in a vacuum state. On the other hand, the second heating assembly is arranged in a detachable structure relative to the shell, so that the second heating assembly can be conveniently repaired and replaced.
In any of the above solutions, the tubular heating assembly comprises: an outer heat conducting tube comprising a closed end and an open end and enclosing a lumen defining the outer heat conducting tube; the inner heating pipe extends into the outer heat conducting pipe cavity from the open end and extends towards the direction of the closed end; wherein, the closed end stretches into the chamber, and the outer heat conduction lumen is communicated with the outer space of the chamber through the open end.
The above-mentioned structure of this embodiment makes the easy maintenance of inner heating pipe change, on the basis of guaranteeing to do benefit to inner heating pipe and carry out the heating to the cavity, has also guaranteed that the cavity is in and seals and vacuum state. From this, this embodiment has simplified the overall structure, the mode of connection of interior heating pipe greatly to make the later maintenance of interior heating pipe more convenient.
In any of the above technical solutions, the heating apparatus for chemical vapor deposition processing further includes: a seal assembly; wherein, be equipped with the through-hole on the casing, outer heat pipe stretches into the cavity through the through-hole, and seal assembly is suitable for sealed through-hole to make the inner space and the exterior space of cavity separate each other.
The sealing assembly is used for sealing the chamber, and the problem that outside air enters the chamber due to poor sealing degree of the joint of the outer heat conduction pipe and the shell is avoided.
In any of the above technical solutions, the sealing assembly includes: the flange is arranged around the periphery of the outer heat conduction pipe; the elastic sealing element is arranged between the flange plate and the shell; and the fastener is suitable for connecting the flange plate with the shell, so that the elastic sealing element seals a gap between the through hole and the outer heat-conducting pipe.
The sealing assembly of the embodiment has the advantages of few parts, simple structure, easiness in installation and assembly and good sealing effect.
In any of the above technical solutions, the outer heat pipe includes a quartz heat pipe; and/or the internal heating tube comprises an infrared heating tube.
The infrared heating pipe has high heating efficiency, can stably work for a long time in an atmospheric environment, has good transmittance of the quartz heat conduction pipe, and can efficiently transfer heat from the inner heating pipe.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic view of a first structure of a heating apparatus for chemical vapor deposition according to an embodiment of the present invention;
FIG. 2 is a second schematic structural view of a heating apparatus for chemical vapor deposition according to an embodiment of the present invention;
fig. 3 is a partially enlarged view of a portion a in fig. 2.
Wherein, the correspondence between the reference numbers and the component names in fig. 1 to 3 is:
100: heating device, 110: a housing, 112: a case, 114: cover, 116: side portion, 118: bottom, 120: chamber, 130: carrier, 140: heating assembly, 150: heat transfer assembly, 152: first heat transfer assembly, 154: second heat transfer assembly, 160: first heating assembly, 170: second heating element, 172: outer heat conductive pipe, 174: outer heat conducting lumen, 176: internal heating pipe, 180: seal assembly, 182: flange plate, 184: elastic seal, 186: fastener, 188: flange gap, 190: drive roller, 200: silicon wafer, 1722: closed end, 1724: an open end.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention more clearly understood, the present invention will be described in further detail with reference to the accompanying drawings and detailed description. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
A heating apparatus 100 for a chemical vapor deposition process according to some embodiments of the present invention will be described with reference to fig. 1 to 3.
Example 1:
as shown in fig. 1 and 2, an embodiment of the present invention provides a heating apparatus 100 for a chemical vapor deposition process. The method comprises the following steps: housing 110, carrier 130, heating assembly 140, and heat transfer assembly 150. The housing 110 encloses and defines a chamber 120. The carrier 130 is disposed in the chamber 120 and adapted to carry a workpiece. The heating assembly 140 is adapted to generate heat to raise the temperature of the work piece. A heat transfer assembly 150 is disposed in the chamber 120 and is adapted to conduct heat from the heating assembly 140.
Specifically, the heating apparatus 100 of the present embodiment is used for performing a plasma enhanced chemical vapor deposition process on a work piece. Plasma Enhanced Chemical Vapor Deposition (PECVD) is an important technical means for surface treatment of substances or objects, and the treatment method utilizes a strong electric field or a magnetic field to ionize required gas source molecules to generate plasma, and the plasma forms a film on the surface of a processed workpiece through a series of chemical and plasma reactions. For example, a silicon nitride thin film layer can be deposited on the surface of a silicon wafer used for manufacturing a solar cell or a semiconductor device by means of plasma enhanced chemical vapor deposition, and the silicon nitride thin film layer can reduce the reflectivity of sunlight and increase the photoelectric conversion efficiency of the solar cell. In addition, the thin film layer is deposited on the surface of the silicon wafer, and the oxidation resistance, chemical stability or insulation performance of the silicon wafer can be improved.
Before the chemical vapor deposition process is performed, it is necessary to raise the temperature of a work piece such as a silicon wafer. On the one hand, in order to ensure the production efficiency and the productivity, the processing needs to be enabled to reach the specified temperature required by the chemical vapor deposition treatment as soon as possible. On the other hand, in order to ensure the treatment effect, the heating temperature to be processed needs to be as uniform as possible. In view of the above, the present embodiment provides a heating apparatus 100 for chemical vapor deposition, which can uniformly increase the temperature, so as to ensure the productivity and improve the product quality.
The heating apparatus 100 of the present embodiment includes a housing 110. The housing 110 specifically includes a case 112 and a cover 114 disposed over the case 112. The lid 114 and the tank 112 cooperate to define a chamber 120 having a vacuum environment. A carrier 130 is disposed in the chamber 120. The carrier 130 is used for carrying a workpiece such as a silicon wafer 200. A plurality of silicon wafers 200 are displayed side by side on the carrier 130. The heating device 100 may also include a drive roller 190. At least two driving rollers 190 are disposed in parallel in the horizontal direction in the chamber 120, and transmit the silicon wafer 200 on the carrier 130 and the carrier 130 by rolling, so that the carrier 130 carrying the silicon wafer 200 moves. The heating assembly 140 functions to provide heat to the silicon wafer 200 so that the temperature of the silicon wafer 200 is increased. The heat transfer assembly 150 is capable of conducting heat generated by the heating assembly 140. Specifically, the heat transfer member 150 can conduct heat generated directly by the heating member 140, and can also conduct heat generated by the heating member 140 and dissipated into the chamber 120.
The heat transfer assembly 150 can not only improve the heat preservation effect in the chamber 120 and the heating efficiency of the heating apparatus 100, but also promote the uniform distribution of the temperature in the chamber 120, and make the temperature of the silicon wafer 200 at each position in the chamber 120 and the temperature of each region above the same silicon wafer 200 tend to be the same. Therefore, the heating device 100 for chemical vapor deposition processing can uniformly increase the temperature, so as to achieve the purposes of ensuring the productivity and improving the product quality.
Example 2:
as shown in fig. 1 and 2, an embodiment of the present invention provides a heating apparatus 100 for a chemical vapor deposition process. In addition to the technical features of embodiment 1 described above, the present embodiment further includes the following technical features.
The heat transfer assembly 150 includes: one or more sheet metal heat transfer assemblies. Wherein the plate-shaped metal heat transfer assembly is coupled with the case 110.
Specifically, the heat transfer member 150 of the present embodiment may be made of a metal plate member having high heat transfer efficiency, such as an aluminum plate, a copper plate, or a steel plate. The plate-shaped metal heat transfer component can be embedded in the inner wall of the casing 110, or can be indirectly connected with the inner wall of the casing 110 through a connecting piece. The plate-shaped metal heat transfer component may be detachably connected to the housing 110 by bolts, fasteners, or may be fixedly connected to the housing 110 by welding or bonding.
The metal heat transfer assembly having the plate-shaped structure has high heat conduction efficiency, low cost, easy processing and convenient installation and assembly with the inner wall of the housing 110.
Example 3:
as shown in fig. 2, an embodiment of the present invention provides a heating apparatus 100 for chemical vapor deposition processing. In addition to the technical features of any of the above embodiments, the present embodiment further includes the following technical features.
The heating element 140 includes a first heating element 160 and a second heating element 170, and the first heating element 160 is disposed on either side of the carrier 130. The second heating element 170 is disposed on the other side of the carrier 130 opposite to the any side.
The first heating element 160 and the second heating element 170 of the present embodiment are disposed opposite to each other on two sides of the carrier 130. For example, the carrier 130 of the present embodiment is disposed along a horizontal direction, the first heating element 160 is disposed above the carrier 130, and the second heating element 170 is disposed below the carrier 130.
Example 4:
as shown in fig. 2, an embodiment of the present invention provides a heating apparatus 100 for chemical vapor deposition processing. In addition to the technical features of any of the above embodiments, the present embodiment further includes the following technical features.
The heat transfer assembly 150 includes: a first heat transfer assembly 152 and a second heat transfer assembly 154. The first heat transfer assembly 152 is disposed on the side 116 of the housing 110. The second heat transfer assembly 154 is disposed on the bottom 118 of the housing 110.
Specifically, the housing 110 of the present embodiment has a box-shaped structure, and the first heat transfer assemblies 152 are disposed on the side portions 116 inside the housing 110 and at opposite ends of an inner side wall of the housing 110 in a direction perpendicular to the moving direction of the carrier 130. The second heating unit 170 is disposed at the bottom 118 inside the casing 110, and in this embodiment, a portion of the casing 110 having a box-type structure disposed in a vertical direction is defined as a side 116, and a portion of the casing 110 having a box-type structure disposed in a horizontal direction is defined as a bottom 118, and the bottom 118 in this embodiment may be a lower bottom and/or an upper bottom. The first and second heating members 160 and 170 may be plate-shaped metal heat transfer members made of a material having high heat transfer efficiency, such as an aluminum plate, a copper plate, or a steel plate, respectively.
First heat transfer assembly 152 and second heat transfer assembly 154 are disposed on one or more sides of carrier 130. The first heat transfer assembly 152 surrounds the side of the carrier 130 to conduct heat from the first heating assembly 160 and/or the second heating assembly 170 and avoid heat dissipation and loss. The second heat transfer assembly 154 may be disposed at a lower position of the second heating assembly 170 and connected to the lower side of the housing 110.
The first heat transfer assembly 152 and the second heat transfer assembly 154 of the present embodiment cooperate with the first heating assembly 160 and the second heating assembly 170 to achieve the purpose of heating, transferring heat, and maintaining heat in multiple directions for the carrier 130 and the silicon wafer 200 on the carrier 130.
Example 5:
as shown in fig. 2, an embodiment of the present invention provides a heating apparatus 100 for chemical vapor deposition processing. In addition to the technical features of any of the above embodiments, the present embodiment further includes the following technical features.
The first heating assembly 160 includes: one or more sheet metal heating assemblies. Wherein the plate-shaped metal heating assembly is disposed in the chamber 120 and connected to the housing 110.
Specifically, the first heating unit 160 of the present embodiment may be made of a metal plate member having high heat transfer efficiency, such as an aluminum plate, a copper plate, or a steel plate. The plate-shaped metal heating element can be embedded into the inner wall of the housing 110, or can be indirectly connected with the inner wall of the housing 110 through a connecting member. The plate-shaped metal heating element may be detachably connected to the housing 110 by bolts, fasteners, or may be fixedly connected to the housing 110 by welding or bonding.
The metal heating assembly with the plate-shaped structure has the advantages of high temperature rise speed, low cost, small volume, easy processing and convenient installation and assembly with the inner wall of the shell 110.
Example 6:
as shown in fig. 2, an embodiment of the present invention provides a heating apparatus 100 for chemical vapor deposition processing. In addition to the technical features of any of the above embodiments, the present embodiment further includes the following technical features.
The second heating assembly 170 includes: one or more tubular heating assemblies. Wherein at least a portion of the tubular heating assembly extends into the chamber 120 and the tubular heating assembly is removably coupled to the housing 110.
The second heating element 170 of the present embodiment specifically includes a plurality of tubular heating elements arranged in an array. Wherein, each tubular heating assembly penetrates the housing 110 and extends into the chamber 120, so as to heat the silicon wafer 200 in the chamber 120. In addition, at least a portion of the tubular heating assembly may protrude from the chamber 120 toward the outer space of the housing 110. The tubular heating assembly and the housing 110 may be detachably connected by a fastening structure and a sealing structure. On one hand, the present embodiment can ensure the airtight condition of the chamber 120, so that the chamber 120 can be in a vacuum state. On the other hand, the present embodiment provides the second heating assembly 170 as a detachable structure with respect to the housing 110, whereby the present embodiment can facilitate maintenance and replacement of the second heating assembly 170. It should also be noted that the tubular heating assemblies facilitate the array arrangement, provide a high degree of uniformity of heating, are easy to install, are easy to seal, and have less effect on the vacuum level of the chamber 120.
Example 7:
as shown in fig. 2 and 3, an embodiment of the present invention provides a heating apparatus 100 for a chemical vapor deposition process. In addition to the technical features of any of the above embodiments, the present embodiment further includes the following technical features.
The tubular heating assembly comprises: an outer heat transfer pipe 172 and an inner heat pipe 176. The outer heat conductive pipe 172 includes a closed end 1722 and an open end 1724 and encloses a lumen 174 defining the outer heat conductive pipe. The inner heating tube 176 extends into the outer heat conducting tube cavity 174 from an open end 1724 and extends in a direction toward a closed end 1722. Wherein the closed end 1722 extends into the chamber 120, the outer heat conducting pipe 172 extending into the chamber 120 can be supported by a support member, one end of the support member is fixed on the housing 110, the other end supports the outer heat conducting pipe 172, and the outer heat conducting pipe cavity 174 is communicated with the external space of the chamber 120 through the open end 1724.
The outer heat conductive pipe 172 of this embodiment can be a quartz pipe excellent in transmittance and thermal expansion property. The inner heating tube 176 may be an infrared lamp tube. The inner heating tube 176 extends from the open end 1724 of the outer heat conducting tube 172 into the outer heat conducting tube cavity 174, extends through the outer heat conducting tube cavity 174 and extends in the direction of the closed end 1722. The closed end 1722 of the outer heat conducting tube 172 extends into the chamber 120 to ensure that the outer heat conducting tube cavity 174 and the chamber 120 are always kept separate from each other. The open end 1724 is provided to allow the outer thermally conductive lumen 174 to remain in communication with the external environment. The support can keep the relative position of the outer heat conductive pipe 172 from shifting. Therefore, the internal heating pipe 176 achieves heating in the atmospheric environment and the atmospheric pressure environment.
The above structure of this embodiment makes the inner heating pipe 176 easy to maintain and replace, and on the basis of ensuring to be favorable to the inner heating pipe 176 to heat the chamber 120, it is also ensured that the chamber 120 is in a closed and vacuum state. From this, this embodiment has simplified the overall structure, the mode of connection of interior heating pipe 176 greatly to it is more convenient to make the later maintenance of interior heating pipe 176. Meanwhile, an aluminum plate heater is arranged above the support plate in the vacuum cavity and is directly opposite to the silicon wafer for radiation heating, so that the nonuniform temperature caused by infrared heating below the support plate is compensated, and the silicon wafer can achieve better temperature uniformity.
Example 8:
as shown in fig. 2 and 3, an embodiment of the present invention provides a heating apparatus 100 for a chemical vapor deposition process. In addition to the technical features of any of the above embodiments, the present embodiment further includes the following technical features.
The heating apparatus 100 further includes: a seal assembly 180. Wherein, a through hole is formed on the housing 110, the outer heat conducting pipe 172 extends into the chamber 120 through the through hole, and the sealing assembly 180 is adapted to seal the through hole, so that the inner space and the outer space of the chamber 120 are separated from each other.
In this embodiment, the sealing assembly 180 is used to seal the chamber 120, so as to avoid the problem that the outside air enters the chamber 120 due to poor sealing at the connection between the outer heat conducting pipe 172 and the housing 110.
In this embodiment, a plurality of outer heat conducting pipes 172 may be arranged in an array, and each outer heat conducting pipe 172 has a sealing component 180 adapted to the outer heat conducting pipe. The sealing member 180 may be an elastic sealing member such as a rubber material, or a rigid sealing member such as a flange.
Example 9:
as shown in fig. 3, an embodiment of the present invention provides a heating apparatus 100 for chemical vapor deposition processing. In addition to the technical features of any of the above embodiments, the present embodiment further includes the following technical features.
The seal assembly 180 includes: flange 182, elastomeric seal 184, and fastener 186. The flange 182 is disposed around the periphery of the outer heat pipe 172. A resilient seal 184 is disposed between flange 182 and housing 110. Fasteners 186 are adapted to connect the flange 182 to the housing 110 such that the elastomeric seal 184 seals the gap between the through hole and the outer heat pipe 172.
The flange 182 of the present embodiment is disposed on the outer heat pipe 172. The elastic seal 184 has an annular configuration and is also disposed over the outer heat conductive pipe 172. A plurality of fasteners 186, such as bolts, are spaced around the periphery of the flange 182 and extend through the flange 182 and engage the housing 110. The fasteners 186 press the flange 182 against the housing 110 and the elastomeric seal 184 between the flange 182 and the housing 110 is compressed and elastically deformed. Thus, the elastic sealing member 184 is tightly attached to the joint of the outer heat conductive pipe 172 and the housing 110 to achieve a sealing effect. One end of the flange 182 close to the housing 110 may be provided with a wedge-shaped flange notch 188, and the elastic sealing member 184 is filled in the flange notch 188 to enhance the sealing effect.
The sealing assembly 180 of the embodiment has few parts, simple structure, easy installation and assembly and good sealing effect.
Example 10:
embodiments of the present invention provide a heating apparatus 100 for chemical vapor deposition processing. In addition to the technical features of any of the above embodiments, the present embodiment further includes the following technical features.
The outer heat pipe 172 comprises a quartz heat pipe, and/or the inner heating pipe 176 comprises an infrared heating pipe.
The infrared heating pipe has high heating efficiency, can stably work for a long time in the atmospheric environment, has good transmittance of the quartz heat conduction pipe, and can efficiently transfer heat from the inner heating pipe 176.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The present embodiment provides a heating apparatus 100 for chemical vapor deposition processing. It includes: housing 110, carrier 130, heating assembly 140, and heat transfer assembly 150.
The housing 110 specifically includes a case 112 and a cover 114 disposed over the case 112. The lid 114 and the tank 112 cooperate to define a chamber 120 having a vacuum environment. A carrier 130 is disposed in the chamber 120. The carrier 130 is used for carrying the silicon wafer 200. The heating device 100 further includes a drive roller 190. The driving roller 190 rolls to transfer the carrier 130 and the silicon wafer 200 on the carrier 130.
The heating assembly 140 provides heat to the silicon wafer 200 so that the temperature of the silicon wafer 200 is increased. The heating assembly 140 specifically includes a first heating assembly 160 and a second heating assembly 170. First heating element 160 is an aluminum plate heater disposed above carrier 130, and second heating element 170 is a red-heat heating device disposed below carrier 130. The heating assembly 140 includes a first heating assembly 160 and a second heating assembly 170.
The heat transfer assembly 150 includes a first heat transfer assembly 152 and a second heat transfer assembly 154. The first heat transfer assembly 152 is disposed on an inner side of the case 110. The second heat transfer assembly 154 is disposed on the lower bottom of the case 110. The first heat transfer assembly 152 and the second heat transfer assembly 154 are aluminum plates. The second heating assembly 170 includes an outer heat conductive tube 172 of quartz material and an inner heating tube 176 for infrared heating. The inner heating pipe 176 extends into the outer heat conductive pipe 172. The outer heat conducting pipe 172 comprises a closed end 1722 and an open end 1724. The inner heating tube 176 is in an atmospheric environment due to the provision of the open end 1724.
The heating device 100 also includes a seal assembly 180. The sealing assembly 180 may prevent external air from entering the chamber 120. The seal assembly 180 includes: flange 182, elastomeric seal 184, and fastener 186. The flange 182 is disposed around the periphery of the outer heat pipe 172. A resilient seal 184 is disposed between flange 182 and housing 110. Fasteners 186 are adapted to connect the flange 182 to the housing 110 such that the elastomeric seal 184 seals the gap between the through hole and the outer heat pipe 172.
In the embodiment, the heat transfer assembly 150 enables the carrier 130 to rapidly heat up and transfer heat to the silicon wafer 200, and enables the temperature of the vacuum environment in which the carrier 130 is located to be more stable, and simultaneously, all the silicon wafers 200 on the carrier 130 achieve good temperature uniformity.
The second heating elements 170 arranged in an array under the carrier 130 in the chamber 120 can achieve the effect of rapidly heating the carrier 130, meanwhile, the inner heating pipes 176, specifically infrared heating pipes, of the second heating elements 170 are directly placed in the atmospheric environment, and by placing the inner heating pipes 176, specifically infrared lamp tubes, inside the outer heat conducting pipes 172, specifically quartz tubes, the present embodiment can achieve infrared heating in the chamber 120 in a vacuum state, greatly simplifying the wiring of the inner heating pipes 176 and facilitating the later maintenance of the inner heating pipes 176. Meanwhile, in the chamber 120, a first heating assembly 160, which is specifically an aluminum plate heater, is disposed above the carrier 130, and the first heating assembly 160 is directly opposite to the silicon wafer 200 for radiation heating, so as to compensate for temperature non-uniformity caused by the second heating assembly 170 below the carrier plate, and enable the silicon wafer 200 to achieve better temperature uniformity.
To sum up, the utility model discloses beneficial effect does:
1. the embodiment of the utility model discloses an embodiment can improve the heat preservation effect among the cavity 120, improves heating device 100's heating efficiency, also can promote the evenly distributed of temperature among the cavity 120.
2. The embodiment of the utility model discloses a can improve silicon chip 200's quality on the basis of guaranteeing silicon chip 200 production efficiency.
3. The embodiment of the utility model provides a heating element 140 wiring is simple, and easily maintenance is changed.
In the present application, the terms "first", "second", "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; the term "plurality" means two or more unless expressly limited otherwise. The terms "mounted," "connected," "fixed," and the like are to be construed broadly, and for example, "connected" may be a fixed connection, a removable connection, or an integral connection; "coupled" may be direct or indirect through an intermediary. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the description of the present invention, it should be understood that the terms "upper", "lower", "left", "right", "front", "back", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or unit indicated must have a specific direction, be constructed and operated in a specific orientation, and therefore, should not be construed as limiting the present invention.
In the description of the present specification, the description of the terms "one embodiment," "some embodiments," "specific embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A heating apparatus for chemical vapor deposition processing, comprising:
a housing enclosing a defined chamber;
the carrier is arranged in the chamber and is suitable for bearing a processed workpiece;
a heating assembly adapted to generate heat to raise a temperature of the work piece;
a heat transfer assembly disposed in the chamber and adapted to conduct heat from the heating assembly.
2. The heating apparatus for chemical vapor deposition processing as recited in claim 1, wherein the heat transfer assembly comprises:
one or more sheet metal heat transfer assemblies;
wherein the plate-shaped metal heat transfer assembly is connected with the case.
3. The heating apparatus of claim 1, wherein the heating assembly comprises:
the first heating assembly is arranged on any side of the carrier;
and the second heating assembly is arranged on the other side of the carrier opposite to the any side.
4. The heating apparatus for chemical vapor deposition processing as recited in claim 3, wherein the heat transfer assembly comprises:
the first heat transfer assembly is arranged on the side part of the shell;
and the second heat transfer component is arranged on the bottom of the shell.
5. The heating apparatus of claim 3, wherein the first heating assembly comprises:
one or more sheet metal heating assemblies;
wherein the plate-shaped metal heating assembly is arranged in the cavity and connected with the shell.
6. The heating apparatus of claim 3, wherein the second heating assembly comprises:
one or more tubular heating assemblies;
wherein at least a portion of the tubular heating assembly extends into the chamber and the tubular heating assembly is removably coupled to the housing.
7. The heating apparatus for chemical vapor deposition processing as recited in claim 6, wherein the tubular heating assembly comprises:
an outer heat conducting tube comprising a closed end and an open end and enclosing a lumen defining the outer heat conducting tube;
the inner heating pipe extends into the outer heat conducting pipe cavity from the open end and extends towards the direction of the closed end;
wherein the closed end extends into the chamber, and the outer heat conducting tube cavity is communicated with the outer space of the chamber through the open end.
8. The heating apparatus for chemical vapor deposition processing as recited in claim 7, further comprising:
a seal assembly;
the shell is provided with a through hole, the outer heat conduction pipe extends into the chamber through the through hole, and the sealing assembly is suitable for sealing the through hole so that the inner space and the outer space of the chamber are mutually separated.
9. The heating apparatus for chemical vapor deposition processing as recited in claim 8, wherein the seal assembly comprises:
the flange is arranged around the periphery of the outer heat conduction pipe;
the elastic sealing element is arranged between the flange plate and the shell;
and the fastening piece is suitable for connecting the flange plate with the shell, so that the elastic sealing piece blocks the gap between the through hole and the outer heat-conducting pipe.
10. The heating apparatus for chemical vapor deposition process according to any one of claims 7 to 9,
the outer heat conduction pipe comprises a quartz heat conduction pipe; and/or
The internal heating pipe comprises an infrared heating pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021165215.6U CN212247204U (en) | 2020-06-22 | 2020-06-22 | Heating device for chemical vapor deposition treatment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021165215.6U CN212247204U (en) | 2020-06-22 | 2020-06-22 | Heating device for chemical vapor deposition treatment |
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| CN212247204U true CN212247204U (en) | 2020-12-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111621770A (en) * | 2020-06-22 | 2020-09-04 | 深圳市捷佳伟创新能源装备股份有限公司 | Heating device for chemical vapor deposition treatment |
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2020
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111621770A (en) * | 2020-06-22 | 2020-09-04 | 深圳市捷佳伟创新能源装备股份有限公司 | Heating device for chemical vapor deposition treatment |
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Effective date of registration: 20210122 Address after: Floor 1-6, No. 62, Jinniu East Road, Zhukeng community, Longtian street, Pingshan District, Shenzhen City, Guangdong Province Patentee after: S.C New Energy Technology Corp. Patentee after: CHANGZHOU S.C EXACT EQUIPMENT Co.,Ltd. Address before: Floor 1-6, No. 62, Jinniu East Road, Zhukeng community, Longtian street, Pingshan District, Shenzhen City, Guangdong Province Patentee before: S.C New Energy Technology Corp. |