CN212246233U - Polycrystalline silicon reduction system - Google Patents
Polycrystalline silicon reduction system Download PDFInfo
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- CN212246233U CN212246233U CN202021609994.4U CN202021609994U CN212246233U CN 212246233 U CN212246233 U CN 212246233U CN 202021609994 U CN202021609994 U CN 202021609994U CN 212246233 U CN212246233 U CN 212246233U
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Abstract
The utility model discloses a polycrystalline silicon reduction system, polycrystalline silicon reduction system includes reduction furnace, hot water supply device, first heat exchanger, second heat exchanger, third heat exchanger, fourth heat exchanger, line mixer, and first heat exchanger is connected with reduction furnace, hot water supply device and second heat exchanger respectively, and the second heat exchanger is connected with reduction furnace, line mixer and first heat exchanger respectively, and the third heat exchanger is connected with first heat exchanger and line mixer respectively, and the fourth heat exchanger is connected with line mixer and second heat exchanger respectively. The utility model discloses a polycrystalline silicon reduction system passes through heat exchanger and hot water supply device's cooperation, can make the heat in the reduction tail gas step by step progressively decrease and by each link in the polycrystalline silicon reduction technology of rational utilization, make full use of the vice heat that produces in the polycrystalline silicon reduction technology.
Description
Technical Field
The utility model relates to a polycrystalline silicon production technical field specifically relates to a polycrystalline silicon reduction system.
Background
Polycrystalline silicon is a basic raw material of a solar cell and an integrated circuit, the polycrystalline silicon mostly adopts an improved Siemens process technology, the vapor deposition of the polycrystalline silicon is realized by the mixed gas of high-purity trichlorosilane and hydrogen in a reduction furnace, the temperature in the reduction furnace is as high as more than 1000 ℃, and an external cooling medium is required to be adopted for cooling so as to ensure the safe and stable operation of a reduction system. Therefore, the energy consumption of the polycrystalline silicon reduction system is very high, and for this reason, various schemes for recovering heat energy have been proposed in the related art. However, the heat energy recovery schemes in the related art still have the problems of low heat energy recovery efficiency and high overall system energy consumption, and there is a need for improvement.
SUMMERY OF THE UTILITY MODEL
The present invention aims at solving at least one of the technical problems in the related art to a certain extent.
Therefore, the embodiment of the utility model provides a polycrystalline silicon reduction system with high heat recovery efficiency and reduced energy consumption.
According to the utility model discloses polycrystalline silicon reduction system, include:
the reduction furnace is provided with a mixed gas supply port and a reduction tail gas discharge port, and the furnace wall of the reduction furnace is provided with a cooling channel which is provided with a cooling water inlet and a cooling water outlet;
a hot water supply device having a water supply port connected to the cooling water inlet and a water return port connected to the cooling water outlet;
the first heat exchanger is provided with a first tail gas inlet, a first tail gas outlet, a first heat exchanger water inlet and a first heat exchanger water outlet, the first tail gas inlet is connected with the reduction tail gas outlet, and the first heat exchanger water inlet is connected with the water supply port;
the second heat exchanger is provided with a second tail gas inlet, a second tail gas outlet, a mixed gas inlet and a mixed gas outlet, the second tail gas inlet is connected with the first tail gas outlet, and the mixed gas outlet is connected with the mixed gas supply port;
the pipeline mixer is provided with a trichlorosilane inlet, a hydrogen inlet and a mixed gas outlet, and the mixed gas outlet is connected with the mixed gas inlet of the second heat exchanger;
the third heat exchanger is provided with a trichlorosilane inlet, a trichlorosilane outlet, a third heat exchanger water inlet and a third heat exchanger water outlet, the trichlorosilane outlet is connected with the trichlorosilane inlet of the mixer, the third heat exchanger water inlet is connected with the first heat exchanger water outlet, and the third heat exchanger water outlet is connected with the water return port;
the fourth heat exchanger is provided with a hydrogen supply port, a hydrogen discharge port, a fourth heat exchanger tail gas inlet and a fourth heat exchanger tail gas outlet, the hydrogen discharge port is connected with the hydrogen inlet of the mixer, and the fourth heat exchanger tail gas inlet is connected with the second tail gas outlet.
According to the utility model discloses a polycrystalline silicon reduction system passes through heat exchanger and hot water supply device's cooperation, can make the heat in the reduction tail gas step by step progressively decrease and by each link in the polycrystalline silicon reduction technology of rational utilization, make full use of the vice heat that produces in the polycrystalline silicon reduction technology.
In some embodiments, the polycrystalline silicon reduction system further comprises a silica fume filter coupled to the off-gas outlet of the fourth heat exchanger.
In some embodiments, the silica fume filter is a cyclone separator or a back-flush cartridge filter.
In some embodiments, the polysilicon reduction system further comprises a buffer tank connected to the trichlorosilane inlet of the third heat exchanger.
In some embodiments, the reduction furnace includes a furnace cover and a chassis, the cooling channel includes a furnace cover cooling channel and a chassis cooling channel, the furnace cover cooling channel and the chassis cooling channel respectively have the cooling water inlet and the cooling water outlet, the cooling water inlet of the furnace cover cooling channel and the cooling water inlet of the chassis are respectively connected to the water supply port, and the cooling water outlet of the furnace cover cooling channel and the cooling water outlet of the chassis are respectively connected to the water return port.
In some embodiments, the polycrystalline silicon reduction system further comprises a hot water circulation pump connected to the water supply port, and the hot water supply device is a flash evaporator.
In some embodiments, the first heat exchanger, the second heat exchanger, the third heat exchanger, and the fourth heat exchanger are one of a jacketed pipe heat exchanger, a U-tube heat exchanger, or a shell and tube heat exchanger.
Drawings
Fig. 1 is a schematic structural diagram of a polysilicon reduction system according to an embodiment of the present invention.
Reference numerals:
a reducing furnace 1, a mixed gas supply port 11, a reduced tail gas discharge port 12, a furnace cover 13, a chassis 14, a seal head 15, a cooling water inlet 16, a cooling water outlet 17,
a hot water supply device 2, a water supply port 21, a water return port 22,
a first heat exchanger 3, a first tail gas inlet 31, a first tail gas outlet 32, a first heat exchanger water inlet 33, a first heat exchanger water outlet 34,
a second heat exchanger 4, a second tail gas inlet 41, a second tail gas outlet 42, a mixed gas inlet 43 and a mixed gas outlet 44,
a third heat exchanger 5, a trichlorosilane inlet 51, a trichlorosilane outlet 52, a third heat exchanger water inlet 53, a third heat exchanger water outlet 54,
a fourth heat exchanger 6, a hydrogen supply port 61, a hydrogen discharge port 62, a fourth heat exchanger tail gas inlet 63, a fourth heat exchanger tail gas outlet 64,
a pipeline mixer 7, a trichlorosilane inlet 71, a hydrogen inlet 72, a mixed gas outlet 73,
the silicon slag filter 8 is arranged on the upper part of the furnace,
the buffer tank 9 is arranged on the upper portion of the container,
a hot water circulation pump 10.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present invention, and should not be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship indicated based on the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; may be mechanically coupled, may be electrically coupled or may be in communication with each other; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the present disclosure, the terms "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
A polycrystalline silicon reduction system and a polycrystalline silicon reduction system according to embodiments of the present invention will be described below with reference to the accompanying drawings.
As shown in fig. 1, a polycrystalline silicon reduction system according to an embodiment of the present invention includes a reduction furnace 1, a hot water supply apparatus 2, a first heat exchanger 3, a second heat exchanger 4, a third heat exchanger 5, a fourth heat exchanger 6, and a line mixer 7.
The reduction furnace 1 has a mixture gas supply port 11 and a reduced off-gas discharge port 12, and the furnace wall of the reduction furnace 1 has a cooling passage having a cooling water inlet 16 and a cooling water outlet 17.
The hot water supply device 2 has a water supply port 21 connected to the cooling water inlet 16 and a water return port 22 connected to the cooling water outlet 17.
The first heat exchanger 3 has a first tail gas inlet 31, a first tail gas outlet 32, a first heat exchanger water inlet 33 and a first heat exchanger water inlet 34, the first tail gas inlet 31 is connected with the reduced tail gas outlet 12, and the first heat exchanger water inlet 33 is connected with the water supply port 21.
The second heat exchanger 4 has a second tail gas inlet 41, a second tail gas outlet 42, a mixed gas inlet 43 and a mixed gas outlet 44, the second tail gas inlet 41 is connected with the first tail gas outlet 32, and the mixed gas outlet 44 is connected with the mixed gas supply port 11.
The pipeline mixer 7 is provided with a trichlorosilane inlet 71, a hydrogen inlet 72 and a mixed gas outlet 73, and the mixed gas outlet 73 is connected with the mixed gas inlet 43 of the second heat exchanger 4.
The third heat exchanger 5 is provided with a trichlorosilane inlet 51, a trichlorosilane outlet 52, a water inlet 53 of the third heat exchanger 5 and a water outlet 54 of the third heat exchanger 5, the trichlorosilane outlet 52 is connected with a trichlorosilane inlet 71 of the mixer, the water inlet 53 of the third heat exchanger 5 is connected with the water inlet 34 of the first heat exchanger, and the water outlet 54 of the third heat exchanger 5 is connected with the water return port 22.
The fourth heat exchanger 6 is provided with a hydrogen supply port 61, a hydrogen discharge port 62, a tail gas inlet 63 of the fourth heat exchanger 6 and a tail gas outlet 64 of the fourth heat exchanger 6, wherein the hydrogen discharge port 62 is connected with a hydrogen inlet 72 of the mixer, and the tail gas inlet 63 of the fourth heat exchanger 6 is connected with the second tail gas outlet 42.
According to the embodiment of the utility model, during the operation of the polysilicon reduction system, the tail gas of the reduction furnace 1 enters the first heat exchanger 3 through the reduction tail gas outlet 12 and the first tail gas inlet 31 and exchanges heat with the hot water entering the first heat exchanger 3 through the water supply port 21 of the hot water supply device 2 and the first heat exchanger water inlet 33 for the first time, the reduction tail gas after the first temperature reduction enters the second heat exchanger 4 through the first tail gas outlet 32 and the second tail gas inlet 41 and exchanges heat with the mixed gas of trichlorosilane and hydrogen entering the second heat exchanger 4 through the mixed gas outlet 73 and the mixed gas inlet 43 for the second time, the reduction tail gas after the second temperature reduction enters the fourth heat exchanger 6 through the second tail gas outlet 42 and the fourth heat exchanger 6 tail gas inlet 63 and exchanges heat with the hydrogen entering the fourth heat exchanger 6 through the hydrogen supply port 61 for the third time, the reduction tail gas after the third temperature reduction is discharged through the fourth heat exchanger 6 tail gas outlet 64, the preheated hydrogen enters the line mixer 7 through the hydrogen discharge port 62 and the hydrogen inlet 72.
Hot water subjected to heat exchange and temperature rise in the first heat exchanger 3 enters the third heat exchanger 5 through the first heat exchanger water inlet 34 and the third heat exchanger 5 water inlet 53 and exchanges heat with trichlorosilane entering the third heat exchanger 5 through the trichlorosilane inlet 51, the hot water subjected to heat exchange and temperature reduction enters the hot water supply device 2 through the third heat exchanger 5 water outlet 54 and the water return port 22, and trichlorosilane subjected to heat exchange and temperature rise enters the pipeline mixer 7 through the trichlorosilane outlet 52 and the trichlorosilane inlet 71 after being gasified and is fully mixed with preheated hydrogen.
The utility model discloses a polycrystalline silicon reduction system of embodiment can make the heat in the reduction tail gas step by step progressively decrease and by each link in the polycrystalline silicon reduction technology of rational utilization, make full use of the vice heat that produces in the polycrystalline silicon reduction technology.
In some embodiments, the polysilicon reduction system further comprises a silica fume filter 8 coupled to the off-gas outlet 64 of the fourth heat exchanger 6.
According to the utility model discloses a polycrystalline silicon reduction system that embodiment provided, the silica fume that produces in reduction production process can be held back to silicon sediment filter 8, solves the problem that current polycrystalline silicon system reduction exhaust pipe blocking leads to the unplanned parking of system to reduce the loss that causes in the production process.
In some embodiments, the silica fume filter 8 can be a cyclone separator, or can be in various forms such as an online backwashing filter element filter and the like,
in some embodiments, the polysilicon reduction system further comprises a buffer tank 9 connected to the trichlorosilane inlet 51 of the third heat exchanger 5.
According to the polysilicon reduction system provided by the embodiment of the utility model, the liquid trichlorosilane enters the buffer tank 9 first, so that the pressure fluctuation of the liquid trichlorosilane can be reduced, and the effect of stabilizing the flow is achieved. In an embodiment, the buffer tank 9 may also be a vaporization tank, so that the liquid trichlorosilane is partially vaporized before entering the third heat exchanger 5, so as to ensure that the liquid trichlorosilane can be completely vaporized in the third heat exchanger 5.
In some embodiments, the reduction furnace 1 includes a furnace mantle 13 and a chassis 14, the cooling channels include a furnace mantle cooling channel and a chassis cooling channel, the furnace mantle cooling channel and the chassis cooling channel have a cooling water inlet 16 and a cooling water outlet 17, respectively, the cooling water inlet 16 of the furnace mantle cooling channel and the cooling water inlet 16 of the chassis cooling channel are connected to a water supply port 21, respectively, and the cooling water outlet 17 of the furnace mantle cooling channel and the cooling water outlet 17 of the chassis cooling channel are connected to a water return port 22, respectively.
In the traditional method for cooling the reduction furnace, the chassis of the reduction furnace is cooled by medium-temperature water (60-90 ℃), so that the reduction workshop is complicated in piping, difficult to operate and incomplete in heat recovery due to the fact that various water sources are available and the cooling system is complex. According to the polysilicon reduction system of the embodiment of the utility model, the chassis 14 and the furnace cover 13 are cooled by high-temperature return water with the same temperature, so that the cooling system is simplified and the operation is convenient.
In some embodiments, the polycrystalline silicon reduction system further comprises a hot water circulation pump 10 connected to the water supply port 21, and the hot water supply device 2 is a flash evaporator.
According to the utility model discloses a polycrystalline silicon reduction system, hot water circulating pump 10 can provide steady pressure and the velocity of flow for reducing furnace 1 and reduction tail gas in order to supply the hot water of heat transfer.
In some embodiments, the first heat exchanger 3, the second heat exchanger 4, the third heat exchanger 5, and the fourth heat exchanger 6 are each one of a jacketed pipe heat exchanger, a U-tube heat exchanger, or a shell and tube heat exchanger.
According to the utility model discloses a polycrystalline silicon reduction system that embodiment provided can select the heat exchanger of different forms according to the difference of production requirement and satisfy the production requirement, chooses for use according to the effect that each heat exchanger is located position and self played.
The embodiment of the utility model also provides a polycrystalline silicon reduction technology includes:
carrying out heat exchange between hot water and trichlorosilane to heat trichlorosilane;
feeding the heated silicon trichloride into a pipeline mixer 7;
carrying out heat exchange on the hydrogen and the reduction tail gas to preheat the hydrogen;
feeding the preheated hydrogen into a pipeline mixer 7 to be mixed with the heated trichlorosilane, so as to obtain mixed gas of the trichlorosilane and the hydrogen;
carrying out heat exchange on the mixed gas and the reduction tail gas;
feeding the mixed gas after heat exchange into a reduction furnace 1 for reduction reaction;
hot water supplied from the hot water supply device 2 is supplied to the reduction furnace 1 to cool the reduction furnace 1, and the hot water cooled in the reduction furnace 1 is discharged.
According to the utility model discloses a polycrystalline silicon reduction technology utilizes heat exchanger and hot water supply device's cooperation, can make the heat in the reduction tail gas step by step progressively decrease and by each link in polycrystalline silicon reduction technology, make full use of the vice heat that produces in the polycrystalline silicon reduction technology.
In some embodiments, the hot water that exchanges heat with trichlorosilane is hot water supplied from the hot water supply device 2 after exchanging heat with the reduction off-gas discharged from the reduction furnace 1;
the reduction tail gas subjected to heat exchange with the mixed gas is the reduction tail gas subjected to heat exchange with trichlorosilane;
the reducing offgas that preheats hydrogen is reducing offgas that has undergone heat exchange with the mixed gas.
According to the embodiment of the utility model provides a polycrystalline silicon reduction technology, the reduction tail gas that uses to have carried out the heat exchange with the mist preheats the heat that can further in the reduction tail gas to hydrogen and retrieves, preheats hydrogen and can make hydrogen and trichlorosilane gaseous intensive mixing.
In some embodiments, the polysilicon reduction process further comprises stabilizing the trichlorosilane by the buffer tank 9 before heating the trichlorosilane, and filtering the reduced tail gas after heat exchange of the hydrogen gas.
According to the utility model discloses a polycrystalline silicon reduction technology that embodiment provided carries out the purpose of stationary flow through buffer tank 9 to trichlorosilane before heating trichlorosilane and is in order to guarantee liquid trichlorosilane's pressure, and the reduction tail gas that has carried out the heat exchange to hydrogen filters the silica fume that can hold back and produce in the reduction production process, solves the problem that current polycrystalline silicon system reduction tail gas pipe blockage leads to the unplanned parking of system to reduce the loss that causes in the production process.
In some embodiments, the temperature of the hot water supplied from the hot water supply device 2 is 130-.
In some embodiments, after the heat exchange between the reduction tail gas discharged from the reduction furnace 1 and the hot water supplied from the hot water supply device 2, the temperature of the reduction tail gas is reduced from 700-750 ℃ to 400-450 ℃, the temperature of the hot water is increased from 130-150 ℃ to 160-180 ℃,
the temperature of the reduction tail gas is reduced from 400-450 ℃ to 200-240 ℃ after the heat exchange with the mixed gas, the temperature of the mixed gas is increased from 45-60 ℃ to 220-250 ℃,
the temperature of the hot water after the heat exchange with the trichlorosilane is reduced from 160-180 ℃ to 130-150 ℃, the temperature of the trichlorosilane is increased to 35-40 ℃,
the temperature of the reduction tail gas after heat exchange with the hydrogen is reduced from 200 ℃ to 240 ℃ to 140 ℃ to 160 ℃, and the temperature of the hydrogen is increased to 60-65 ℃.
According to the utility model discloses a polycrystalline silicon reduction technology, reduction tail gas through with the gas mixture and the hydrogen heat transfer of hot water, trichlorosilane and hydrogen, the reduction tail gas that is 700 + 750 ℃ with the temperature falls to the temperature and is 140 + 160 ℃, utilize simultaneously and can gasify trichlorosilane completely with the hot water after the reduction tail gas heat transfer, has preheated hydrogen, the utility model discloses a polycrystalline silicon reduction technology of embodiment is according to the required heat energy of each technology link in the reduction tail gas, and the heat energy make full use of in the reduction tail gas is among each link of polycrystalline silicon reduction technology, fully and effectively utilized the auxiliary heat that produces in the polycrystalline silicon reduction technology, has reduced manufacturing cost.
Some specific exemplary polysilicon reduction systems according to the present invention are described below with reference to the accompanying drawings.
As shown in fig. 1, the polycrystalline silicon reduction system according to the embodiment of the present invention includes a reduction furnace 1, a hot water supply apparatus 2, a first heat exchanger 3, a second heat exchanger 4, a third heat exchanger 5, a fourth heat exchanger 6, a pipe mixer 7, a silica fume filter 8, a buffer tank 9, and a hot water circulation pump 10.
The reduction furnace 1 comprises a furnace cover 13, a chassis 14, an end enclosure 15, a mixed gas supply port 11 and a reduced tail gas discharge port 12, wherein the end enclosure 15 is arranged at the upper end of the furnace cover 13, the chassis 14 is arranged at the lower end of the furnace cover 13, the mixed gas supply port 11 and the reduced tail gas discharge port 12 are arranged on the chassis 14, the furnace cover 13 and the chassis 14 are provided with cooling channels (not shown in the figure) which are provided with a cooling water outlet 17 and a cooling water inlet 16, the hot water supply device 2 comprises a water supply port 21 and a water return port 22, the water supply port 21 of the hot water supply device 2 is respectively connected with the cooling water outlet 17 of the cooling channels of the furnace cover 13 and the chassis 14 through a hot water circulating pump 10, and the cooling water outlet 17 of the cooling channels of the furnace cover 13 and the chassis.
The first heat exchanger 3 comprises a first tail gas inlet 31, a first tail gas outlet 32, a first heat exchanger water inlet 33 and a first heat exchanger water inlet 34, the second heat exchanger 4 comprises a second tail gas inlet 41, a second tail gas outlet 42 and a mixed gas outlet 44 of a mixed gas inlet 43, the third heat exchanger 5 comprises a trichlorosilane inlet 51, a trichlorosilane outlet 52, a third heat exchanger 5 water inlet 53 and a third heat exchanger 5 water outlet 54, and the fourth heat exchanger 6 comprises a hydrogen supply port 61, a hydrogen discharge port 62, a fourth heat exchanger 6 tail gas inlet 63 and a fourth heat exchanger 6 tail gas outlet 64.
The pipeline mixer 7 comprises a trichlorosilane inlet 71, a hydrogen inlet 72 and a mixed gas outlet 73.
The first tail gas inlet 31 of the first heat exchanger 3 is communicated with the reduced tail gas outlet 12 of the reduction furnace 1, the first tail gas outlet 32 of the first heat exchanger 3 is communicated with the second tail gas inlet 41 of the second heat exchanger 4, the second tail gas outlet 42 of the second heat exchanger 4 is communicated with the tail gas inlet 63 of the fourth heat exchanger 6, and the tail gas outlet 64 of the fourth heat exchanger 6 is communicated with the silicon slag filter 8.
The first heat exchanger water inlet 33 of the first heat exchanger 3 is communicated with the water supply port 21 of the hot water supply device 2 through the hot water circulating pump 10, the first heat exchanger water inlet 34 of the first heat exchanger 3 is communicated with the third heat exchanger 5 water inlet 53, and the third heat exchanger 5 water outlet 54 is communicated with the water return port 22 of the hot water supply device 2.
The mixed gas supply port 11 of the reduction furnace 1 is communicated with the mixed gas outlet 44 of the second heat exchanger 4, the mixed gas inlet 43 of the second heat exchanger 4 is communicated with the mixed gas outlet 73 of the pipeline mixed gas, the hydrogen inlet 72 of the pipeline mixed gas is communicated with the hydrogen outlet 62 of the fourth heat exchanger 6, hydrogen enters the fourth heat exchanger 6 through the hydrogen supply port 61 of the fourth heat exchanger 6, the trichlorosilane inlet 71 of the pipeline mixer 7 is communicated with the trichlorosilane outlet 52 of the third heat exchanger 5, the trichlorosilane inlet 51 of the third heat exchanger 5 is communicated with the buffer, and liquid trichlorosilane enters the third heat exchanger 5 through the buffer.
In this embodiment, the hot water supply device 2 is a flash evaporator, the end socket is not a butterfly end socket, and the first heat exchanger 3, the second heat exchanger 4, the third heat exchanger 5 and the fourth heat exchanger 6 are respectively one of a jacketed pipe type heat exchanger, a U-shaped pipe type heat exchanger or a tube type heat exchanger.
Although embodiments of the present invention have been shown and described, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art without departing from the scope of the present invention.
Claims (7)
1. A polysilicon reduction system, comprising:
the reduction furnace is provided with a mixed gas supply port and a reduction tail gas discharge port, and the furnace wall of the reduction furnace is provided with a cooling channel which is provided with a cooling water inlet and a cooling water outlet;
a hot water supply device having a water supply port connected to the cooling water inlet and a water return port connected to the cooling water outlet;
the first heat exchanger is provided with a first tail gas inlet, a first tail gas outlet, a first heat exchanger water inlet and a first heat exchanger water outlet, the first tail gas inlet is connected with the reduction tail gas outlet, and the first heat exchanger water inlet is connected with the water supply port;
the second heat exchanger is provided with a second tail gas inlet, a second tail gas outlet, a mixed gas inlet and a mixed gas outlet, the second tail gas inlet is connected with the first tail gas outlet, and the mixed gas outlet is connected with the mixed gas supply port;
the pipeline mixer is provided with a trichlorosilane inlet, a hydrogen inlet and a mixed gas outlet, and the mixed gas outlet is connected with the mixed gas inlet of the second heat exchanger;
the third heat exchanger is provided with a trichlorosilane inlet, a trichlorosilane outlet, a third heat exchanger water inlet and a third heat exchanger water outlet, the trichlorosilane outlet is connected with the trichlorosilane inlet of the mixer, the third heat exchanger water inlet is connected with the first heat exchanger water outlet, and the third heat exchanger water outlet is connected with the water return port;
the fourth heat exchanger is provided with a hydrogen supply port, a hydrogen discharge port, a fourth heat exchanger tail gas inlet and a fourth heat exchanger tail gas outlet, the hydrogen discharge port is connected with the hydrogen inlet of the mixer, and the fourth heat exchanger tail gas inlet is connected with the second tail gas outlet.
2. The polysilicon reduction system of claim 1, further comprising a silica fume filter coupled to the off-gas outlet of the fourth heat exchanger.
3. The polysilicon reduction system of claim 2, wherein the silica fume filter is a cyclone or a back-flush cartridge filter.
4. The polysilicon reduction system of claim 1, further comprising a buffer tank connected to the trichlorosilane inlet of the third heat exchanger.
5. The polysilicon reducing system according to claim 2, wherein the reducing furnace comprises a furnace cover and a chassis, the cooling channel comprises a furnace cover cooling channel and a chassis cooling channel, the furnace cover cooling channel and the chassis cooling channel are respectively provided with the cooling water inlet and the cooling water outlet, the cooling water inlet of the furnace cover cooling channel and the cooling water inlet of the chassis are respectively connected with the water supply port, and the cooling water outlet of the furnace cover cooling channel and the cooling water outlet of the chassis are respectively connected with the water return port.
6. The polysilicon reducing system of claim 1, further comprising a hot water circulating pump connected to the water supply port, wherein the hot water supply device is a flash evaporator.
7. The polysilicon reduction system of claim 1, wherein the first heat exchanger, the second heat exchanger, the third heat exchanger, and the fourth heat exchanger are one of a jacketed tubular heat exchanger, a U-shaped tubular heat exchanger, or a tubular heat exchanger.
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| CN202021609994.4U CN212246233U (en) | 2020-08-05 | 2020-08-05 | Polycrystalline silicon reduction system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111892057A (en) * | 2020-08-05 | 2020-11-06 | 中国恩菲工程技术有限公司 | Polycrystalline silicon reduction system and polycrystalline silicon reduction process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111892057A (en) * | 2020-08-05 | 2020-11-06 | 中国恩菲工程技术有限公司 | Polycrystalline silicon reduction system and polycrystalline silicon reduction process |
| CN111892057B (en) * | 2020-08-05 | 2024-08-20 | 中国恩菲工程技术有限公司 | Polysilicon reduction system and polysilicon reduction process |
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