CN212223148U - Crucible for reducing carbon inclusion in silicon carbide single crystal - Google Patents
Crucible for reducing carbon inclusion in silicon carbide single crystal Download PDFInfo
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- CN212223148U CN212223148U CN202020875086.3U CN202020875086U CN212223148U CN 212223148 U CN212223148 U CN 212223148U CN 202020875086 U CN202020875086 U CN 202020875086U CN 212223148 U CN212223148 U CN 212223148U
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Abstract
The application provides a crucible for reducing carbon inclusion in silicon carbide single crystal, sets up annular crucible annex through setting up on the inner wall at the crucible body, offers flutedly on the bottom surface of crucible annex, simultaneously, makes the crucible annex be close to the internal diameter of crucible lid, crucible annex is greater than the diameter of seed crystal. By utilizing the structure, the temperature is highest at the position close to the side wall of the crucible body in the initial growth stage of the single crystal, and then the excessive Si close to the side wall of the crucible body enters the groove of the crucible accessory arranged on the side wall of the crucible body, so that the excessive Si in the initial growth stage can be shunted by utilizing the groove in the crucible accessory, the corrosion of Si components to the crucible is reduced, and the reduction of carbon inclusion in the SiC single crystal is facilitated; meanwhile, after the single crystal grows for a period of time, carbon in the residual polycrystalline material close to the side wall of the crucible body also enters the groove of the crucible accessory, and then carbon inclusions in the SiC single crystal can be reduced.
Description
Technical Field
The application relates to the technical field of silicon carbide single crystal growth, in particular to a crucible for reducing carbon inclusions in a silicon carbide single crystal.
Background
Silicon carbide (SiC) is a typical representative of third-generation semiconductor materials, and has excellent overall properties such as high thermal conductivity, wide forbidden bandwidth, high chemical stability, and strong radiation resistance, compared to first-generation Si and second-generation GaAs semiconductor materials. This makes SiC semiconductor materials used for the preparation of high power electronic devices and microwave devices and have been widely used in the fields of high voltage power transmission, 5G communication, electric vehicles, etc., and SiC semiconductor materials and devices are now the industry of controversy in various countries.
The physical vapor transport method is the mainstream method for growing SiC crystals at present. FIG. 1 is a schematic view of a basic structure of a conventional crucible. As shown in figure 1, the crucible is made of graphite material and consists of a crucible cover 1 and a crucible body 2, wherein, the lower side end of the crucible cover 1 (the dotted line in the figure represents a thread part, and the thread is also called a screw in some cases), and the crucible cover 1 and the crucible body 2 are fastened by a thread 3. During crystal growth, the SiC seed crystal 4 is adhered to the crucible cover 1, SiC polycrystalline powder (not shown in the figure) serving as a growth raw material is filled in the crucible body 2, the growth temperature is controlled between 2273K and 2773K, the SiC polycrystalline powder is in a high-temperature region, and the SiC seed crystal 4 is in a low-temperature region. In the high temperature region, the SiC polycrystal material is decomposed into a gas phase containing Si and C components, transported to the surface of the SiC seed crystal 4 in the low temperature region by convection or diffusion, and crystallized into a SiC single crystal material.
However, in the above growth process, since the ratio of Si and C is not 1: 1, the atomic number of Si in the atmosphere is greater than the atomic number of C. The main consequences of the above proportions are: in the initial growth stage, the redundant Si in the atmosphere can erode the graphite piece, so that the graphite piece becomes loose, graphite particles fall off, and the graphite particles are transported to the surface of the crystal through convection to become a part of the crystal; in the later growth stage, the SiC polycrystalline material is gradually graphitized, and graphite particles in the SiC polycrystalline material are also transmitted to the surface of the growing crystal to form a carbon inclusion. The existence of the carbon inclusion can change the local conductivity of the SiC single crystal substrate and bring serious influence on the reliability of the device, so that the control must be carried out in the process of single crystal growth.
SUMMERY OF THE UTILITY MODEL
In view of the above problems, embodiments of the present application provide a crucible for reducing carbon inclusions in a silicon carbide single crystal.
The crucible for reducing the carbon inclusion in the silicon carbide single crystal, provided by the embodiment of the application, comprises a crucible cover and a crucible body, wherein:
the lower surface of the crucible cover is used for sticking seed crystals;
an annular crucible accessory is arranged on the inner wall of the crucible body, the crucible accessory is arranged close to the port of the crucible body and surrounds the periphery of the inner wall of the crucible body, and the inner diameter of the crucible accessory is larger than or equal to the diameter of the seed crystal;
a groove is formed in the bottom surface of the crucible accessory, and an opening of the groove faces the bottom surface of the crucible body.
Optionally, the crucible body inner wall comprises a first inner wall portion and a second inner wall portion, wherein:
the diameter of the first inner wall portion is greater than the diameter of the second inner wall portion;
a step surface is formed between the first inner wall part and the second inner wall part, and the step surface is contacted with the lower surface of the crucible accessory;
the outer wall of the crucible attachment is in contact with the first inner wall portion.
Optionally, the lower surface of the crucible cover is provided with a boss for sticking the seed crystal, wherein:
the diameter of the boss gradually increases from the lower surface to the upper surface of the crucible cover.
Optionally, the upper surface of the crucible attachment is spaced from the lower surface of the seed crystal.
Optionally, the distance between the upper surface of the crucible accessory and the lower surface of the seed crystal is 1-2 mm.
Optionally, the inner wall of the crucible attachment is parallel or approximately parallel to the inner wall of the crucible body.
Optionally, a first fixed orifices has been seted up on the crucible cover, a second fixed orifices has been seted up on the port face of the crucible body, wherein:
the first fixing hole is a unthreaded hole, and threads are arranged on the inner wall of the second fixing hole;
the crucible cover and the crucible body are fastened through the first screw rods penetrating through the first fixing holes and the second fixing holes.
Optionally, the crucible barrel comprises a crucible barrel and a crucible bottom, wherein:
a third fixing hole is formed in the crucible bottom, and a fourth fixing hole is formed in the port surface of the crucible barrel;
the third fixing hole is a unthreaded hole, and threads are arranged on the inner wall of the fourth fixing hole;
the crucible bottom and the crucible cylinder are fastened through the second screw rod penetrating through the third fixing hole and the fourth fixing hole.
The crucible for reducing the carbon inclusion in the silicon carbide single crystal, provided by the embodiment of the application, is provided with a groove on the bottom surface of the crucible accessory by arranging the annular crucible accessory on the inner wall of the crucible body, and meanwhile, the crucible accessory is close to the inner diameter of the crucible cover and the crucible accessory is larger than the diameter of the seed crystal. During the crystal growth process, the SiC polycrystal material in the crucible body is decomposed into gas phase Si and SiC2And Si2C, the vapor pressure of Si in the three gas phases is highest, namely the gas phase contains more Si than C, and the SiC polycrystal materialThe ratio of Si to C is close to 1: 1, so that after a certain period of time of SiC single crystal growth, i.e., after a certain period of time of decomposition of the SiC polycrystalline material, excess solid C must remain in the remaining polycrystalline material. Meanwhile, the transmission direction of gas phase or solid phase substances in the crucible body is approximately vertical to the direction of seed crystals, the temperature of the place close to the side wall of the crucible body is highest at the initial stage of single crystal growth, the decomposed Si is also highest in excess, the Si excess in the central area is lowest, and the excess Si close to the side wall of the crucible body enters the groove of the crucible accessory arranged on the side wall of the crucible body, so that the excess Si at the initial stage of growth can be shunted by utilizing the groove in the crucible accessory, the corrosion of Si components to the crucible is reduced, the phenomenon that graphite particles of the crucible fall off and then are convectively transmitted to the crystal surface is prevented, and the reduction of carbon inclusions in SiC single crystals is facilitated; meanwhile, after the single crystal grows for a period of time, carbon in the residual polycrystalline material close to the side wall of the crucible body also enters the groove of the crucible accessory, and then carbon inclusions in the SiC single crystal can be reduced.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive labor.
FIG. 1 is a schematic view showing the basic structure of a conventional crucible of the prior art.
FIG. 2 is a schematic view of a disassembled structure of a first crucible provided in an embodiment of the present application;
FIG. 3 is a schematic view of a split structure of a crucible body and a crucible attachment provided in an embodiment of the present application;
FIG. 4 is a schematic view of an assembly structure of a first crucible provided in an embodiment of the present application;
FIG. 5 is a schematic view of a second crucible according to an embodiment of the present disclosure;
FIG. 6 is a schematic view of an assembly structure of a second crucible provided in the embodiments of the present application;
FIG. 7a is a micrograph image of a SiC single crystal grown using a prior art crucible;
FIG. 7b is a micrograph image of a SiC single crystal grown using the crucible provided in this example.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
Aiming at the problem that in the process of growing the silicon carbide single crystal and the process of decomposing the SiC polycrystal, the proportion of Si and C is not 1: 1, the atomic number of Si in the atmosphere is larger than that of C, and then excessive carbon inclusion exists in the SiC single crystal.
Fig. 2 is a schematic view of a disassembled structure of a first crucible provided in an embodiment of the present application. As shown in FIG. 2, the graphite crucible for single crystal growth of silicon carbide provided in the present embodiment mainly comprises two parts, a crucible cover 1 and a hollow crucible body 2.
During the use, the lower surface of crucible cover 1 is used for pasting the seed crystal, with 1 lock of crucible cover back on the crucible body 2, and then can make the seed crystal towards the cavity of crucible body 2. It should be noted that, for convenience of description, after the crucible cover 1 is fastened to the crucible body 2 in this embodiment, the surface of the crucible cover 1 close to the crucible body 2 is a lower surface, and the surface of the crucible cover 2 away from the crucible body is an upper surface, and the surface of the crucible cover 2 close to the top of the crucible cover 1 and away from the crucible body 2 is a bottom surface.
Fig. 3 is a schematic view of a split structure of a crucible body and a crucible attachment provided in an embodiment of the present application. As shown in FIGS. 2 and 3, an annular crucible attachment 6 is provided on the inner wall of the crucible body 2, and the crucible attachment 6 is provided near the port of the crucible body and surrounds the inner wall of the crucible body 3 by one round. In order to realize the fixation of the crucible attachment 6, the present embodiment provides that the crucible body inner wall includes a first inner wall portion 202 and a second inner wall portion 204, the diameter of the first inner wall portion 202 is larger than that of the second inner wall portion 204; a step surface 203 is formed between the first inner wall portion 202 and the second inner wall portion 204, and by the above step structure, after the crucible attachment 6 is loaded into the crucible body 2, the step surface 203 contacts with the lower surface of the crucible attachment 6, and thus the support and the mounting position positioning of the crucible attachment 6 can be realized. Of course, in other embodiments, the crucible attachment 6 and the crucible body can be integrally formed, but the embodiment is designed to be a split structure, and by setting different inner diameters of the crucible attachment 6, the crucible attachment can be applied to the growth of single crystals with various sizes. Meanwhile, a groove 61 is formed on the bottom surface of the crucible attachment 6, and the opening of the groove 61 faces the bottom surface of the crucible body 2, wherein the width of the groove 61 is in the range of 4-20mm and the depth is in the range of 20-50mm, but not limited to this numerical range.
FIG. 4 is a schematic view of an assembly structure of a first crucible according to an embodiment of the present disclosure. As shown in fig. 4, the seed crystal 4 is stuck on the lower surface of the crucible cover 1, and the central axis of the seed crystal 4 coincides or nearly coincides with the central axis of the crucible attachment 6 so that the projection of the seed crystal 4 to the crucible attachment 6 can fall into the inner ring of the crucible attachment 6. Meanwhile, a silicon carbide polycrystal material 7 is held in the crucible body 2.
During the crystal growth process, under the action of the temperature axis ladder, gas phase or solid phase substances in the crucible body are conveyed according to the arrow direction in the figure 4, namely the conveying direction is approximately vertical to the direction of the seed crystal. Because the SiC polycrystal material 7 in the crucible body 2 is decomposed into gas phase Si and SiC2And Si2C, the vapor pressure of Si in the three gas phases is the highest, namely the gas phase contains more Si than C, and the ratio of Si to C in the SiC polycrystalline material 7 is close to 1: 1, therefore, after a certain period of time of SiC single crystal growth, i.e., after a certain period of time of decomposition of the SiC polycrystal material, excess solid C must be left in the remaining polycrystal material. Meanwhile, at the initial stage of the single crystal growth, a place near the side wall of the crucible body 2The temperature is highest, the excessive amount of the decomposed Si is highest, the excessive amount of the Si in the central area is lowest, and then the excessive Si close to the side wall of the crucible body 2 enters the groove provided with the crucible attachment 6, so that the excessive Si at the initial growth stage can be shunted by utilizing the groove 61 in the crucible attachment 6, the corrosion of Si components to the crucible, particularly the crucible cover, is reduced, the graphite particles of the crucible are prevented from being convectively transmitted to the surface of a crystal after falling off, and the reduction of carbon inclusions in the SiC single crystal is facilitated; meanwhile, after the single crystal grows for a period of time, particularly at the later period 1/3 of growth, the SiC polycrystalline material 7 is continuously decomposed and is decomposed into gas phase, and as a result, the amount of Si in the gas phase is more than that of C in the polycrystalline material, and as a result, the C in the polycrystalline material gradually accumulates, i.e., the polycrystalline material is graphitized, and the graphitization generally occurs at the edge of the material, i.e., the residual polycrystalline material near the side wall of the crucible body 2 is graphitized, and in the same way, the redundant carbon also enters the groove 61 of the crucible attachment 6, so that the carbon inclusion in the SiC single crystal can be reduced. Further, Si and SiC in a gas phase transferred to the crucible attachment 6 by the crucible attachment 62And Si2And C, the crystal can be combined into polycrystal on the crucible accessory 6, and further, the grown SiC single crystal and the polycrystal can be separated, so that the grown SiC single crystal can be taken out from the crucible.
Further, in view of the direction of transport of the gaseous or solid phase material within the crucible body, the present embodiment is arranged such that the inner wall of the crucible attachment 6 is parallel or approximately parallel to the inner wall of the crucible body 2.
In order to expand the diameter of the single crystal, the upper surface of the crucible attachment 6 and the lower surface of the seed crystal 4 are spaced apart from each other by a predetermined distance, and the distance may be any value of 1 to 2mm, but is not limited thereto. Therefore, in subsequent processing, because the quality of the edge of the single crystal is usually not high enough, after the diameter expansion growth, the poor peripheral quality part of the diameter expansion of the single crystal can be ground off in the processing process, the effective diameter can be ensured, and the whole processed single crystal has high quality.
As shown in fig. 2 to 4, the present embodiment also provides a portion for attaching the seed crystal on the lower surface of the crucible cover 1 as a boss structure, and the diameter of the boss gradually increases in the direction from the lower surface to the upper surface of the crucible cover 1. According to the temperature variation trend, if set up the lower surface of crucible cover to smooth surface or design the boss for straight wall structure, the temperature of the polycrystal preferential growing point that is close to diameter edge on the crucible cover is certain to be less than the temperature at seed crystal edge, in the growth process, the single crystal grows at seed crystal edge, the polycrystal preferential growing point growth of polycrystal on the crucible cover simultaneously, because the temperature of the polycrystal preferential growing point on the crucible cover is low, growth rate is fast, polycrystal grows downwards and catches up the single crystal of seed crystal department soon, in case the horizontal plane and the single crystal parallel and level of polycrystal, polycrystal meeting lateral shifting, phagocytose the single crystal, the single crystal diameter that makes the growth is less than the seed crystal diameter.
Referring to fig. 4, according to the temperature variation law in the crucible: the temperature of the preferential growing point A of the polycrystal is not necessarily higher than that of the point B of the edge of the seed crystal, therefore, the growth speed of the polycrystal is much slower than that of the flat crucible surface or the straight platform, the growth of the polycrystal can not reach the plane position which is parallel and level with the monocrystal all the time, the growth of the monocrystal has certain lateral growth speed, as long as the polycrystal does not catch up, the diameter of the polycrystal is larger and larger, as long as the growth of the monocrystal exceeds the plane at the upper end of the crucible accessory 6 and enters the inner diameter of the crucible accessory 6, the polycrystal is sealed, the growth of the monocrystal is only generated in the inner diameter of the crucible accessory 6 later, and the structure provided by the embodiment can be favorable for reducing the polycrystal at the edge of the monocrystal.
Further, in the process of growing silicon carbide single crystal, the graphite crucible is a consumable material, and after a certain period of single crystal growth, due to erosion of the graphite threads on the crucible cover and the crucible body by the silicon atmosphere in the powder, the service life of the crucible is short, as shown in fig. 2 to 4, after the crucible cover 1 and the crucible body 2 are assembled, in order to fasten the crucible cover 1 and the crucible body 2, in this embodiment, a first fixing hole 101 is formed in the crucible cover 1, and the first fixing hole 101 is a through hole penetrating through the crucible cover 1. In order to facilitate the tightness and flatness of the crucible cover 1 and the crucible body 2 after assembly, six first fixing holes 101 are symmetrically formed in the crucible cover 1 in the present embodiment, but of course, in other embodiments, other numbers may be set, and the present embodiment is not particularly limited.
Simultaneously, seted up second fixed orifices 201 on the port face of the crucible body 2, be equipped with the screw thread on the inner wall of second fixed orifices 201, outer wall utensil screwed screw rod 5 is as crucible fastening component, and screw rod 5 can be the graphite material, then, and crucible cover 1 fastens through the screw rod 5 of wearing to establish at first fixed orifices 101 and second fixed orifices 201 with the crucible body 2. Based on the fixing structure of the screw 5, the second fixing hole 201 is designed to be a counter bore structure composed of a large hole and a small hole in the embodiment, so that the cap head portion of the screw 5 enters the large hole, the lower surface of the cap head is in contact with the platform portion between the large hole and the small hole, and the counter bore functions, so that the screw 5 can penetrate through the crucible cover 1 and meanwhile, the mounting depth of the crucible cover is positioned. In addition, in the embodiment, the first fixing hole 101 is designed as a smooth hole with a non-threaded inner wall, so that machining errors exist between the first fixing hole 101 and the corresponding second fixing hole 201, and the crucible can be fastened.
Fig. 5 is a schematic view of a disassembled structure of a second crucible provided in the embodiments of the present application, and fig. 6 is a schematic view of an assembled structure of the second crucible provided in the embodiments of the present application. As shown in fig. 5 and 6, the present embodiment is different from the above-described embodiments in that the crucible body in the present embodiment includes a crucible barrel 21 and a crucible bottom 22. Likewise, a crucible attachment 6 is provided in the crucible cylinder 21 near the end opening of the crucible cover 1.
Further, after the crucible bottom 22 is assembled with the crucible barrel 21, in order to fasten the crucible bottom 22 and the crucible barrel 21, a third fixing hole 221 is formed in the crucible bottom 22 in the embodiment, and the third fixing hole 221 is a through hole penetrating through the crucible bottom 22. Meanwhile, a fourth fixing hole 212 is formed in the lower port surface of the crucible barrel 21 (i.e., the port surface close to the crucible bottom 22), threads are formed on the inner wall of the fourth fixing hole 212, the screw 52 with threads on the outer wall serves as a crucible fastening component, the screw 52 can be made of graphite, and then the crucible bottom 22 and the crucible barrel 21 are fastened through the screw 52 penetrating through the third fixing hole 221 and the fourth fixing hole 212.
Similarly, in the present embodiment, a first fixing hole 101 is formed in the crucible cover 1, and the first fixing hole 101 is a through hole penetrating through the crucible cover 1. Meanwhile, a second fixing hole 211 is formed in an upper end face (i.e., a end face close to the crucible cover 1) of the crucible barrel 21, threads are formed on an inner wall of the second fixing hole 211, a screw 51 with threads on an outer wall serves as a crucible fastening component, the screw 51 may be made of graphite, and then the crucible cover 1 and the crucible barrel 21 are fastened by the screw 51 penetrating through the first fixing hole 101 and the second fixing hole 211.
This embodiment is through the split type structure of constituteing for 22 and a crucible section of thick bamboo 21 at the bottom of by the crucible with the crucible body design, accomplishes the crystal growth after, can open at the bottom of the crucible 22, takes out the crystal, and then can not receive crucible inner wall growth to have polycrystal influence.
Based on the above design, the present embodiment further provides a comparison test between the existing crucible and the crucible provided in the present embodiment.
During the test, specifically, SiC seed crystals are bonded on the lower surface of the crucible cover, for the crucible cover with the lug boss provided in the embodiment, SiC polycrystalline powder is loaded into the crucible body, and the distance between the surface of the polycrystalline powder and the SiC seed crystals is kept between 30 and 60 mm; installing the crucible accessory in the crucible body, assembling and fastening the crucible cover and the crucible body together; and finally, putting the crucible into a single crystal furnace for SiC single crystal growth.
FIG. 7a is a micrograph image of a SiC single crystal grown using a prior art crucible; FIG. 7b is a micrograph image of a SiC single crystal grown using the crucible provided in this example. From FIG. 7a, it can be seen that the single crystal contains 2 distinct inclusions; whereas the single crystal of fig. 7b is substantially free of inclusions. As can be seen from the comparison of the data, the crucible provided by the embodiment can effectively reduce carbon inclusions in the SiC single crystal.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the application is limited only by the appended claims.
Claims (8)
1. The utility model provides a crucible for reducing carbon inclusion in carborundum single crystal which characterized in that, includes crucible cover, the crucible body, wherein:
the lower surface of the crucible cover is used for sticking seed crystals;
an annular crucible accessory is arranged on the inner wall of the crucible body, the crucible accessory is arranged close to the port of the crucible body and surrounds the periphery of the inner wall of the crucible body, and the inner diameter of the crucible accessory is larger than or equal to the diameter of the seed crystal;
a groove is formed in the bottom surface of the crucible accessory, and an opening of the groove faces the bottom surface of the crucible body.
2. The crucible of claim 1, wherein the inner wall of the crucible body comprises a first inner wall portion and a second inner wall portion, wherein:
the diameter of the first inner wall portion is greater than the diameter of the second inner wall portion;
a step surface is formed between the first inner wall part and the second inner wall part, and the step surface is contacted with the lower surface of the crucible accessory;
the outer wall of the crucible attachment is in contact with the first inner wall portion.
3. The crucible as set forth in claim 1, wherein the crucible cover is provided at a lower surface thereof with a boss for sticking the seed crystal, wherein:
the diameter of the boss is gradually increased along the direction from the lower surface to the upper surface of the crucible cover.
4. The crucible of claim 1 or claim 2, wherein an upper surface of the crucible attachment is spaced from a lower surface of the seed crystal.
5. The crucible as set forth in claim 4 wherein the spacing between the upper surface of the crucible attachment and the lower surface of the seed crystal is 1 to 2 mm.
6. The crucible of claim 1, wherein the interior wall of the crucible attachment is parallel or approximately parallel to the interior wall of the crucible body.
7. The crucible of claim 1, wherein the crucible cover defines a first fixed orifice and the port surface of the crucible body defines a second fixed orifice, and wherein:
the inner wall of the second fixing hole is provided with threads;
the crucible cover and the crucible body are fastened through a first screw rod penetrating through the first fixing hole and the second fixing hole.
8. The crucible of claim 1 or 7, wherein the crucible body comprises a crucible barrel and a crucible bottom, wherein:
a third fixing hole is formed in the crucible bottom, and a fourth fixing hole is formed in the port surface of the crucible barrel;
the inner wall of the fourth fixing hole is provided with threads;
the crucible bottom and the crucible cylinder are fastened through a second screw rod penetrating through the third fixing hole and the fourth fixing hole.
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| CN202020875086.3U CN212223148U (en) | 2020-05-22 | 2020-05-22 | Crucible for reducing carbon inclusion in silicon carbide single crystal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112831841A (en) * | 2020-12-31 | 2021-05-25 | 湖南三安半导体有限责任公司 | Silicon carbide single crystal growth device and growth method thereof |
| CN113622030A (en) * | 2021-08-18 | 2021-11-09 | 福建北电新材料科技有限公司 | Method for preparing silicon carbide single crystal |
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2020
- 2020-05-22 CN CN202020875086.3U patent/CN212223148U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112831841A (en) * | 2020-12-31 | 2021-05-25 | 湖南三安半导体有限责任公司 | Silicon carbide single crystal growth device and growth method thereof |
| CN113622030A (en) * | 2021-08-18 | 2021-11-09 | 福建北电新材料科技有限公司 | Method for preparing silicon carbide single crystal |
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