CN214193519U - Unstressed silicon carbide seed crystal fixing device and crucible - Google Patents
Unstressed silicon carbide seed crystal fixing device and crucible Download PDFInfo
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- CN214193519U CN214193519U CN202023301675.XU CN202023301675U CN214193519U CN 214193519 U CN214193519 U CN 214193519U CN 202023301675 U CN202023301675 U CN 202023301675U CN 214193519 U CN214193519 U CN 214193519U
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Abstract
The application provides a no stress carborundum seed crystal fixing device and crucible, this carborundum seed crystal fixing device include that the seed crystal holds in the palm and the seed crystal lid. The seed crystal holds in the palm the design for the annular structure that the middle part is drawn hollowly to along its central axis direction include seed crystal supporting part, seed crystal portion of holding, seed crystal lid portion of holding in proper order. Meanwhile, the shape of the inner periphery of the seed crystal supporting part is the same as the shape of the outer periphery of the seed crystal, the size of the seed crystal supporting part is smaller than the outer diameter of the seed crystal, the inner diameter of the seed crystal accommodating part is larger than the outer diameter of the seed crystal, and the height of the seed crystal accommodating part is larger than the thickness of the seed crystal. Utilize above-mentioned structure and size design, pack into the seed crystal with the seed crystal and hold in the palm to pack into the seed crystal lid and hold in the palm the back with the seed crystal, only the edge of seed crystal relies on the gravity of self to contact with the seed crystal supporting part, and then at the single crystal growth in-process, do not have the stress problem that coefficient of thermal expansion mismatch leads to between seed crystal and the seed crystal fixing device, can eliminate the extra mechanical stress that the seed crystal received, be favorable to high quality SiC single crystal to grow.
Description
Technical Field
The application relates to the technical field of silicon carbide single crystal growth, in particular to an unstressed silicon carbide seed crystal fixing device and a crucible.
Background
SiC is a typical representative of third-generation semiconductor materials, and has excellent comprehensive properties such as high thermal conductivity, wide forbidden bandwidth, high chemical stability, and strong radiation resistance, compared with first-generation Si and second-generation GaAs semiconductor materials. This makes SiC semiconductor materials used for the preparation of high power electronic devices and microwave devices, and has been widely used in the fields of high voltage power transmission, 5G communication, electric vehicles, and the like.
The physical vapor transport method is the mainstream method for growing SiC crystals at present. During single crystal growth, SiC seed crystals (seed crystals for short) are usually adhered to a crucible cover or the top of a graphite crucible, SiC polycrystalline powder serving as a growth raw material is filled in the graphite crucible, the growth temperature is controlled to be 2000-2300 ℃, the SiC polycrystalline powder is in a high-temperature region, and the seed crystals are in a low-temperature region. In the high temperature area, the SiC polycrystalline powder is decomposed into gas phase containing Si and C components, and the gas phase is transported to the surface of the seed crystal in the low temperature area through convection or diffusion and crystallized into the SiC single crystal material.
In the growth process, the SiC seed crystal is positioned at the top of the crucible growth cavity, and how to fix the seed crystal has important influence on the quality of the single crystal. In published papers or patents, the seed crystal is generally adhered to the lower surface of the graphite crucible cover or to a graphite sheet and then fixed to the top of the crucible. However, in the above-mentioned seed crystal fixing method, since the thermal expansion coefficient of SiC is larger than that of graphite in the temperature rise process of single crystal growth, the contact surface of the SiC seed crystal and graphite is subjected to compressive stress and the growth surface thereof is subjected to tensile stress at high temperature. Meanwhile, the stress can be transferred to the subsequently grown crystal, so that dislocation in the crystal is propagated, and the quality of the SiC single crystal is influenced.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the application designs the stress-free silicon carbide seed crystal fixing device and the crucible, and by adopting the novel seed crystal fixing method, the seed crystal does not bear any external stress, and the quality of the grown SiC single crystal is high.
According to a first aspect of embodiments of the present application, there is provided a stress-free silicon carbide seed crystal fixing device, comprising a seed holder and a seed crystal cover, wherein:
the seed crystal support is of an annular structure with a hollow middle part and sequentially comprises a seed crystal supporting part, a seed crystal accommodating part and a seed crystal cover accommodating part along the central axis direction of the seed crystal support;
the inner peripheral shape of the seed crystal supporting part is the same as the outer peripheral shape of the seed crystal, the distance from the center of the seed crystal supporting part to the small edge of the seed crystal supporting part is smaller than the distance from the center of the seed crystal to the small edge of the seed crystal, the distance from the center of the seed crystal supporting part to the large edge of the seed crystal supporting part is smaller than the distance from the center of the seed crystal to the large edge of the seed crystal supporting part, and the inner diameter of the seed crystal supporting part is smaller than the outer diameter of the seed crystal;
the inner diameter of the seed crystal accommodating part is larger than the outer diameter of the seed crystal, and the height of the seed crystal accommodating part is larger than the thickness of the seed crystal;
the inner diameter of the seed crystal cover accommodating part is matched with the outer diameter of the seed crystal cover, and the seed crystal cover can be detachably arranged in the seed crystal cover accommodating part.
According to a second aspect of the embodiments of the present application, there is provided a crucible, wherein a support is arranged on the inner wall of the crucible, and the support is used for supporting the unstressed silicon carbide seed crystal fixing device of the first aspect of the embodiments of the present application.
The non-stress silicon carbide seed crystal fixing device and the crucible provided by the embodiment of the application comprise a seed crystal support and a seed crystal cover. The seed crystal support is designed into an annular structure with a hollow middle part, and sequentially comprises a seed crystal supporting part, a seed crystal accommodating part and a seed crystal cover accommodating part along the central axis direction of the seed crystal support. Meanwhile, the shape of the inner periphery of the seed crystal supporting part is the same as the shape of the outer periphery of the seed crystal, the size of the seed crystal supporting part is smaller than the outer diameter of the seed crystal, the inner diameter of the seed crystal accommodating part is larger than the outer diameter of the seed crystal, and the height of the seed crystal accommodating part is larger than the thickness of the seed crystal. Utilize above-mentioned structure and size design, pack into the seed crystal with the seed crystal and hold in the palm, and pack into the seed crystal lid seed crystal and hold in the palm the back, only the edge of seed crystal relies on the gravity of self and contacts with the seed crystal supporting part, and then, in the single crystal growth in-process, there is not the stress problem that coefficient of thermal expansion mismatching leads to between seed crystal and the seed crystal fixing device, the plus mechanical stress that the seed crystal received can be eliminated, in addition, utilize the structural design that seed crystal lid and seed crystal held in the palm, can make the back of seed crystal be in a sealed space, and then prevent that the atmosphere that the carborundum powder decomposes from leaking into the back of seed crystal, effectively prevent the decomposition of seed crystal, be favorable to high quality SiC single crystal growth.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive labor.
FIG. 1a is a schematic representation of a silicon carbide seed crystal provided in accordance with an embodiment of the present application with the silicon face up;
FIG. 1b is a schematic representation of a silicon carbide seed crystal provided in an embodiment of the present application with the carbon side facing up;
FIG. 2 is a schematic diagram of a basic structure of a seed crystal cover provided in an embodiment of the present application;
FIG. 3 is a schematic diagram of a basic structure of a seed holder provided in an embodiment of the present application;
FIG. 4 is a schematic view of a seed crystal provided in an embodiment of the present application after being loaded into a seed holder;
FIG. 5 is a schematic view of an assembled seed crystal and silicon carbide seed crystal fixture according to an embodiment of the present application;
FIG. 6 is a schematic view of the assembly of a silicon carbide seed crystal holding device and a crucible provided in the embodiments of the present application;
fig. 7 is a schematic diagram of a basic structure of another seed holder provided in the embodiments of the present application.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
Before describing the silicon carbide seed crystal holding apparatus provided in the present embodiment, the SiC seed crystal mentioned in the present embodiment will be described.
SiC is a polar crystal whose (0001) silicon face and (000-1) carbon face are not equivalent. Epitaxial growth is generally performed on the (0001) silicon surface of SiC, and in order to distinguish the silicon surface from the carbon surface, two alignment sides, namely, a main alignment side and a sub-alignment side, need to be processed. Fig. 1a is a schematic view of a silicon carbide seed crystal provided in an embodiment of the present application with the silicon surface facing upward, and fig. 1b is a schematic view of a silicon carbide seed crystal provided in an embodiment of the present application with the carbon surface facing upward. As shown in fig. 1a and 1b, when the silicon surface and the carbon surface of the silicon carbide seed crystal face upward, the positions of the secondary positioning edge relative to the primary positioning edge are different, so that the silicon surface and the carbon surface can be distinguished. To describe the physical dimensions of the seed crystal, this example defines several parameters: the diameter (outer diameter) D of the crystal, the distance S1 from the center point to the main positioning side, the distance S2 from the center point to the secondary positioning side, and the thickness T of the seed crystal.
At present, there are two main types of crystal forms which can grow into bulk SiC, namely 4H-SiC and 6H-SiC. In order to maintain the stability of the crystal form, the growth of the 4H-SiC single crystal is generally carried out on the carbon surface of the seed crystal, namely the carbon surface faces to the silicon carbide powder, and the silicon surface is correspondingly defined as the back surface of the seed crystal; the growth of the 6H-SiC is carried out on the silicon face of the seed crystal, i.e. the silicon face is directed towards the silicon carbide powder, the carbon face of which is correspondingly defined as the back face of the seed crystal.
For convenience of description, the present embodiment first exemplifies a silicon carbide seed crystal fixing apparatus suitable for 4H — SiC single crystal growth, and the structure thereof will be described.
Fig. 2 is a schematic diagram of a basic structure of a seed crystal cover provided in the embodiment of the present application, and fig. 3 is a schematic diagram of a basic structure of a seed crystal holder provided in the embodiment of the present application. As shown in fig. 2 and 3, the present embodiment provides a two-part structure comprising a seed cap 10 and a seed holder 20, wherein the seed cap 10 and the seed holder 20 can be made of, but are not limited to, graphite.
As shown in fig. 3, the seed holder 20 has a ring-shaped structure with a hollow central portion, and includes a seed supporting portion 21, a seed accommodating portion 22, and a seed cover accommodating portion 23 in this order along its central axis.
Fig. 4 is a schematic diagram of a seed crystal provided in the embodiment of the present application after being loaded into a seed tray. As shown in fig. 3 and 4, the shape of the inner periphery of the seed crystal support 21 is the same as the shape of the outer periphery of the seed crystal 3 to be installed, and the size of each part is slightly smaller than the size of the corresponding part of the seed crystal 3, i.e., the distance from the center of the seed crystal support 21 to the small side thereof is smaller than the distance from the center of the seed crystal 3 to the small side thereof, the distance from the center of the seed crystal support 21 to the large side thereof is smaller than the distance from the center of the seed crystal 3 to the large side thereof, and the inner diameter of the seed crystal support 21 is smaller than the outer diameter of the seed crystal 3, so as to support the seed crystal. Meanwhile, the inner peripheral shape of the seed crystal supporting part 21 is designed to be the same as the outer peripheral shape of the seed crystal 3 to be installed, so that the atmosphere of SiC powder decomposition can be prevented from leaking into the back of the seed crystal from the edge of the seed crystal, the size difference between the seed crystal supporting part 21 and the seed crystal 3 can be smaller on the premise of realizing the supporting effect, and the growth of single crystals with enough effective diameters is ensured.
In view of the above, the present embodiment also provides a preferable size difference between the seed crystal support 21 and the seed crystal 3, wherein the distance from the center of the seed crystal support 21 to the small side thereof is 0.5 to 1mm smaller than the distance from the center of the seed crystal 3 to the small side thereof, the distance from the center of the seed crystal support 21 to the large side thereof is 0.5 to 1mm smaller than the distance from the center of the seed crystal 3 to the large side thereof, and the inner diameter of the seed crystal support 21 is 1 to 2mm smaller than the outer diameter of the seed crystal 3.
Furthermore, considering that the weight of the seed crystal 3 cannot be borne by the seed crystal supporting part 21 due to too thin thickness and the effective diameter of the crystal at the position corresponding to the thickness of the seed crystal supporting part 21 in the subsequent growth is not enough due to too thick thickness, the height of the seed crystal supporting part is designed to be 0.5-1 mm. Of course, in practice, the range is not limited to the above numerical value.
In order to minimize the influence of the seed crystal support 21 on the growth of the single crystal, it is preferable that the seed crystal support 21 is formed in a direction from the seed crystal cap accommodating portion 23 to the seed crystal support 21, and the inner diameter of the seed crystal support 21 is gradually increased, that is, the hollow portion in the middle of the seed crystal support 21 is formed in a horn shape.
The seed crystal accommodating part 22 is used for accommodating the seed crystal 3, the inner diameter of the seed crystal accommodating part 22 is designed to be larger than the outer diameter of the seed crystal 3, and the height of the seed crystal accommodating part 22 is designed to be larger than the thickness of the seed crystal 3, so that the back and the side of the seed crystal 3 are not stressed after the seed crystal 3 is placed in the seed crystal holder 20. In order to make it easier to make the center of the seed crystal 3 coincide with the center of the seed crystal support 21 when the seed crystal 3 is placed in the seed crystal accommodating part 22, the present embodiment further provides that the inner peripheral shape of the seed crystal accommodating part 22 is the same as the outer peripheral shape of the seed crystal 3, and the distance from the center of the seed crystal accommodating part 22 to its small side is greater than the distance from the center of the seed crystal 3 to its small side, and the distance from the center of the seed crystal accommodating part 22 to its large side is greater than the distance from the center of the seed crystal 3 to its large side.
Based on the above consideration, the present embodiment sets the distance from the center of the seed crystal accommodating part 22 to the small side thereof to be 0.05 to 0.1mm greater than the distance from the center of the seed crystal 3 to the small side thereof, the distance from the center of the seed crystal accommodating part 22 to the large side thereof to be 0.05 to 0.1mm greater than the distance from the center of the seed crystal 3 to the large side thereof, the inner diameter of the seed crystal accommodating part 22 to be 0.1 to 0.2mm greater than the outer diameter of the seed crystal 3, and the height of the seed crystal accommodating part 22 to be 0.2 to 0.5mm greater than the thickness of the seed crystal 3. Of course, in practice, the range is not limited to the above numerical value.
The inner diameter of the seed cap receiving part 23 is matched with the outer diameter of the seed cap 10, and the seed cap 10 can be detachably fitted into the seed cap receiving part 23. In order to ensure the sealing effect, the atmosphere for decomposing the silicon carbide powder cannot leak into the back of the seed crystal, and the seed crystal cover 10 and the seed crystal cover accommodating part 23 can be in interference fit, i.e. the outer diameter of the seed crystal cover 10 is slightly larger than the inner diameter of the seed crystal cover accommodating part 23. Further, in order to ensure that the seed crystal cover 10 is installed in place, the height of the seed crystal cover accommodating part 23 is designed to be equal to the thickness of the seed crystal cover 10, so that when the seed crystal cover is installed, if the upper surfaces of the seed crystal cover and the seed crystal cover are completely flush, the seed crystal cover 10 is installed.
Further, in order to facilitate the seed crystal placement, the inner diameter of the seed crystal cover accommodating portion 23 is set larger than the inner diameter of the seed crystal accommodating portion 22. For example, the inner diameter of the seed cover holder 23 is designed to be 5 to 10mm larger than the inner diameter of the seed holder 22.
FIG. 5 is a schematic view of an assembled seed crystal and SiC seed crystal holding apparatus according to an embodiment of the present application. As shown in fig. 5, by using the above structure and size design, the seed crystal 3 is loaded into the seed crystal holder 20, and after the seed crystal cover 10 is loaded into the seed crystal holder 20, the back of the seed crystal 3 has a certain gap with the seed crystal cover 10, the side wall of the seed crystal also has a certain gap with the seed crystal holder 20, only the edge of the seed crystal 3 contacts with the seed crystal support part by the gravity of the seed crystal 3, furthermore, in the single crystal growth process, there is no stress problem caused by the mismatch of thermal expansion coefficients between the seed crystal 3 and the seed crystal fixing device, the additional mechanical stress received by the seed crystal can be eliminated, in addition, by using the structure design of the seed crystal cover 10 and the seed crystal holder 20, the back of the seed crystal 3 can be in a sealed space, further, the atmosphere of silicon carbide powder decomposition is prevented from leaking into the back of the seed crystal, the decomposition of the seed crystal is effectively prevented, and the high-quality SiC single crystal growth is facilitated.
FIG. 6 is a schematic view of the assembly of a silicon carbide seed crystal holding apparatus and a crucible according to an embodiment of the present application. As shown in FIG. 6, in cooperation with the above-mentioned silicon carbide seed crystal holding apparatus, the present embodiment also provides a crucible, wherein a support member 4 is provided on the inner wall of the crucible 1, and the support member 4 is used for supporting the above-mentioned silicon carbide seed crystal holding apparatus.
Before assembly, in order to protect the back of the seed crystal 3, a protective layer can be coated on the back of the seed crystal 3 to protect the seed crystal from decomposition or sublimation at high temperature. For example, taking 4H-SiC seed crystal as an example, a layer of graphite glue is uniformly coated on the silicon surface of the 4H-SiC seed crystal, and then annealing is carried out for 2 hours at the temperature of 700-800 ℃ so as to completely graphitize the graphite glue. In this embodiment, the graphite colloid is graphitized before growth, and the effect of the graphite colloid after graphitization, such as thickness and uniformity of the graphite layer, can be evaluated and confirmed. If the graphite layer is too thin, the protective layer is damaged as long as a little SiC vapor leaks into the back of the seed crystal, and if the graphite layer is too thick, stress is caused to the seed crystal, so that the thickness of the graphite layer after annealing is set to be 50-100 μm.
Then, as shown in fig. 4, the seed crystal 3 is placed in the seed holder 20 with its carbon surface facing downward, that is, facing the silicon carbide powder 5, and the seed crystal is placed so as to be aligned with the center of the seed crystal support 21 of the seed holder 20 as much as possible, and due to the above-mentioned dimensional restrictions, the center of the seed crystal 3 can easily fall on the center of the seed crystal support 21, and then the seed crystal cover 10 is closed.
Finally, the silicon carbide seed crystal fixing device with the seed crystal placed is placed in the crucible 1 and loaded in a single crystal furnace for crystal growth.
Fig. 7 is a schematic diagram of a basic structure of another seed holder provided in the embodiments of the present application. As shown in fig. 7, unlike the growth of 4H-SiC, when 6H-SiC is grown on the silicon surface of the seed crystal, the seed holder provided in the above embodiment is no longer suitable for holding the 6H-SiC seed crystal, and for this purpose, a new seed holder needs to be designed, whose basic size is determined by the same rule as that of the seed holder of 4H-SiC, but the shapes of the hollows of the seed crystal supports 21 of the two have a mirror symmetry relationship.
When the silicon carbide single crystal is grown, a layer of graphite glue is uniformly coated on the carbon surface of the 6H-SiC seed crystal, annealing is carried out for 2 hours at the temperature of 700-800 ℃ so as to completely graphitize the graphite glue, and the thickness of the graphite layer on the carbon surface after annealing is 50-100 mu m. Then, the silicon surface of the 6H-SiC seed crystal is placed in the seed holder as shown in fig. 7, facing the seed crystal support 21, and then covered with a graphite cover; finally, the silicon carbide seed crystal holding apparatus with the 6H-SiC seed crystal placed thereon was placed in a crucible and loaded in a single crystal furnace for crystal growth.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the application is limited only by the appended claims.
Claims (10)
1. The utility model provides a no stress carborundum seed crystal fixing device which characterized in that, includes seed crystal support and seed crystal lid, wherein:
the seed crystal support is of an annular structure with a hollow middle part and sequentially comprises a seed crystal supporting part, a seed crystal accommodating part and a seed crystal cover accommodating part along the central axis direction of the seed crystal support;
the inner peripheral shape of the seed crystal supporting part is the same as the outer peripheral shape of the seed crystal, the distance from the center of the seed crystal supporting part to the small edge of the seed crystal supporting part is smaller than the distance from the center of the seed crystal to the small edge of the seed crystal, the distance from the center of the seed crystal supporting part to the large edge of the seed crystal supporting part is smaller than the distance from the center of the seed crystal to the large edge of the seed crystal supporting part, and the inner diameter of the seed crystal supporting part is smaller than the outer diameter of the seed crystal;
the inner diameter of the seed crystal accommodating part is larger than the outer diameter of the seed crystal, and the height of the seed crystal accommodating part is larger than the thickness of the seed crystal;
the inner diameter of the seed crystal cover accommodating part is matched with the outer diameter of the seed crystal cover, and the seed crystal cover is detachably arranged in the seed crystal cover accommodating part.
2. The unstressed silicon carbide seed crystal fixing device according to claim 1, wherein the shape of the inner periphery of the seed crystal receptacle is the same as the shape of the outer periphery of the seed crystal, the distance from the center of the seed crystal receptacle to the small side thereof is greater than the distance from the center of the seed crystal receptacle to the small side thereof, and the distance from the center of the seed crystal receptacle to the large side thereof is greater than the distance from the center of the seed crystal receptacle to the large side thereof.
3. The unstressed silicon carbide seed crystal holding device of claim 1, wherein the height of the seed crystal cover receiving portion is equal to the thickness of the seed crystal cover.
4. The unstressed silicon carbide seed crystal holding device of claim 1, wherein the inner diameter of the seed cap receptacle is larger than the inner diameter of the seed receptacle.
5. The seed crystal holding apparatus for silicon carbide without stress as set forth in claim 1, wherein the seed crystal support has an inner diameter gradually increasing from the seed crystal lid accommodating portion to the direction of the seed crystal support.
6. The seed crystal fixing device of the unstressed silicon carbide according to claim 1 or 5, wherein the height of the seed crystal supporting part is 0.5-1 mm.
7. The unstressed silicon carbide seed crystal fixing device according to claim 1, wherein the distance from the center of the seed crystal support to the small side thereof is 0.5 to 1mm smaller than the distance from the center of the seed crystal to the small side thereof, the distance from the center of the seed crystal support to the large side thereof is 0.5 to 1mm smaller than the distance from the center of the seed crystal to the large side thereof, and the inner diameter of the seed crystal support is 1 to 2mm smaller than the outer diameter of the seed crystal.
8. The unstressed silicon carbide seed crystal fixing device according to claim 2, wherein the distance from the center of the seed crystal accommodating part to the small side thereof is 0.05 to 0.1mm greater than the distance from the center of the seed crystal to the small side thereof, the distance from the center of the seed crystal accommodating part to the large side thereof is 0.05 to 0.1mm greater than the distance from the center of the seed crystal to the large side thereof, the inner diameter of the seed crystal accommodating part is 0.1 to 0.2mm greater than the outer diameter of the seed crystal, and the height of the seed crystal accommodating part is 0.2 to 0.5mm greater than the thickness of the seed crystal.
9. The unstressed silicon carbide seed crystal fixing device of claim 1 wherein the seed crystal cover receiving portion is an interference fit with the seed crystal cover.
10. A crucible, wherein a support is provided on the inner wall of the crucible, the support being adapted to support an unstressed silicon carbide seed crystal holding means as claimed in any one of claims 1 to 9.
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| CN202023301675.XU CN214193519U (en) | 2020-12-30 | 2020-12-30 | Unstressed silicon carbide seed crystal fixing device and crucible |
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| CN202023301675.XU CN214193519U (en) | 2020-12-30 | 2020-12-30 | Unstressed silicon carbide seed crystal fixing device and crucible |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113550002A (en) * | 2021-09-18 | 2021-10-26 | 浙江大学杭州国际科创中心 | Method and structure for fixing silicon carbide seed crystal |
| CN113862789A (en) * | 2021-12-01 | 2021-12-31 | 浙江大学杭州国际科创中心 | Crucible structure, device and method for preparing p-type 4H-SiC single crystal |
| CN114086246A (en) * | 2021-11-24 | 2022-02-25 | 江苏集芯半导体硅材料研究院有限公司 | Seed crystal holder |
| CN114395803A (en) * | 2022-01-13 | 2022-04-26 | 浙江大学 | Bonding structure and bonding method for reducing back sublimation of silicon carbide seed crystal |
| CN114686984A (en) * | 2020-12-30 | 2022-07-01 | 广州南砂晶圆半导体技术有限公司 | Stress-free silicon carbide seed crystal fixing device, crucible and silicon carbide seed crystal fixing method |
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2020
- 2020-12-30 CN CN202023301675.XU patent/CN214193519U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114686984A (en) * | 2020-12-30 | 2022-07-01 | 广州南砂晶圆半导体技术有限公司 | Stress-free silicon carbide seed crystal fixing device, crucible and silicon carbide seed crystal fixing method |
| CN113550002A (en) * | 2021-09-18 | 2021-10-26 | 浙江大学杭州国际科创中心 | Method and structure for fixing silicon carbide seed crystal |
| CN114086246A (en) * | 2021-11-24 | 2022-02-25 | 江苏集芯半导体硅材料研究院有限公司 | Seed crystal holder |
| CN113862789A (en) * | 2021-12-01 | 2021-12-31 | 浙江大学杭州国际科创中心 | Crucible structure, device and method for preparing p-type 4H-SiC single crystal |
| CN113862789B (en) * | 2021-12-01 | 2022-03-11 | 浙江大学杭州国际科创中心 | Crucible structure, device and method for preparing p-type 4H-SiC single crystal |
| CN114395803A (en) * | 2022-01-13 | 2022-04-26 | 浙江大学 | Bonding structure and bonding method for reducing back sublimation of silicon carbide seed crystal |
| CN114395803B (en) * | 2022-01-13 | 2023-08-22 | 浙江大学 | Bonding structure and bonding method for reducing back sublimation of silicon carbide seed crystal |
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