CN212163275U

CN212163275U - LTE-asymmetric doherty power amplifier module based on domestic LDMOS chip

Info

Publication number: CN212163275U
Application number: CN202020470626.XU
Authority: CN
Inventors: 庄峰
Original assignee: Xiamen Hejiaxing Electronic Co ltd
Current assignee: Xiamen Hejiaxing Electronic Co ltd
Priority date: 2020-04-02
Filing date: 2020-04-02
Publication date: 2020-12-15
Anticipated expiration: 2030-04-02

Abstract

The utility model discloses a LTE-asymmetric doherty power amplifier module based on homemade LDMOS chip, including preceding stage drive input matching network module U1, preceding stage drive amplifier module U2, preceding stage drive output matching network module U3, final stage drive input matching network module U4, final stage drive amplifier module U5, final stage drive output matching network module U6, 5dB directional coupler U7, lambda/4 microstrip line U8 and lambda/4 microstrip line U15, lambda/4 microstrip line U8 and lambda/4 microstrip line U15 are the signal line. The utility model discloses utilize homemade LDMOS device to improve classic Doherty, the cost is reduced has improved efficiency and output.

Description

LTE-asymmetric doherty power amplifier module based on domestic LDMOS chip

Technical Field

The utility model relates to a LTE-asymmetric doherty power amplifier technical field especially relates to LTE-asymmetric doherty power amplifier module based on homemade LDMOS chip.

Background

With the continuous evolution of the commercial communication system in China, the signal mode peak-to-average ratio of the base station is higher and higher, and the linearity requirement is higher and higher. The signal system with high peak-to-average power ratio has higher requirements on the output power and efficiency of the power amplifier, a power amplifier with higher power is needed, the cost is high, and the power efficiency of the power amplifier module directly influences the commercial performance, the commercial cost and the power distribution network of the LTE network. Two common modes in the traditional power amplification scheme are a traditional backspacing scheme and a classic Doherty scheme.

The traditional backspacing scheme has higher linearity under the same output power, requires higher power amplification P-1dB and larger backspacing, is at the expense of efficiency and has highest cost; although the classic Doherty scheme is improved to a certain extent compared with the back-off scheme, in practical application, some defects still exist, for example, the load impedance of the main and peak power amplifiers cannot be fully modulated, so that the efficiency of the power amplifier is reduced. Based on the problems of the traditional power amplification scheme, an LTE-asymmetric doherty power amplifier module based on a domestic LDMOS chip is provided.

SUMMERY OF THE UTILITY MODEL

The utility model aims at solving the defects existing in the prior art, and providing the LTE-asymmetric doherty power amplifier module based on the domestic LDMOS chip.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

an LTE-asymmetrical doherty power amplifier module based on a domestic LDMOS chip comprises a pre-stage driving input matching network module U1, a pre-stage driving amplification module U2, a pre-stage driving output matching network module U3, a final-stage driving input matching network module U4, a final-stage driving amplification module U5, a final-stage driving output matching network module U6, a 5dB directional coupler U7, a lambda/4 microstrip line U8 and a lambda/4 microstrip line U15, wherein the lambda/4 microstrip line U8 and the lambda/4 microstrip line U15 are signal lines, the pre-stage driving input matching network module U1, the pre-stage driving amplification module U2, the pre-stage driving output matching network module U3, the final-stage driving input matching network module U4, the final-stage driving amplification module U5, the final-stage driving output matching network module U6 and the 5dB directional coupler U7 are electrically connected in sequence, and an input end of the pre-stage driving input matching network module U1 is electrically connected with an RFIN, an output end of the 5dB directional coupler U7 is electrically connected with an input matching network module U12 and an input matching network module U9, an output end of the 5dB directional coupler U7 is connected with the input matching network module U9 through a lambda/4 microstrip line U8, an output end of the input matching network module U9 is electrically connected with an auxiliary power amplifier U10, an output network matching module U11 is electrically connected with an output end of the auxiliary power amplifier U10, an output end of the output network matching module U11 is electrically connected with one end of a 35 ohm microstrip line, an output end of the input matching network module U12 is electrically connected with a main power amplifier U13, an output end of the main power amplifier U13 is electrically connected with an output network matching module U14, an output end of the output network matching module U14 is also electrically connected with one end of the 35 ohm microstrip line, one end of the 35 ohm microstrip line is electrically connected with an output end of the output network matching module U14 through the lambda/4U 15, and the other end of the 35 ohm microstrip line is electrically connected with an antenna AT.

Preferably, the pre-driver amplifier module U2 is a model LXK6105 amplifier of Redmond, Inc., to achieve a gain P-1 of 18dB and 0.5W.

Preferably, the final driving amplification module U5 adopts an HTN7G27S020P type amplifier of Suzhou Huatai electronics, and achieves the P-1 of gains of 18dB and 25W.

Preferably, the main power amplifier U13 is an HTN7S09S060P model amplifier of sycamore, and the main power amplifier U13 is configured as a main tube, the auxiliary power amplifier U10 is an HTN7G09S120P model amplifier of sycamore, and the auxiliary power amplifier U10 is configured as a peak tube, and the main power amplifier U13 and the auxiliary power amplifier U10 cooperate to achieve P-1 gains of 18dB and 180W.

Preferably, the 5dB directional coupler U7 is an Anaren 5dB coupler.

The utility model discloses utilize homemade LDMOS device to improve classic Doherty, the cost is reduced has improved efficiency and output.

Drawings

Fig. 1 is the utility model provides a structural schematic diagram of the asymmetric doherty power amplifier module of LTE-based on homemade LDMOS chip.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.

Referring to fig. 1, the LTE-asymmetric doherty power amplifier module based on the homemade LDMOS chip includes a pre-stage driving input matching network module U1, a pre-stage driving amplification module U2, a pre-stage driving output matching network module U3, a final-stage driving input matching network module U4, a final-stage driving amplification module U5, a final-stage driving output matching network module U6, a 5dB directional coupler U7, a λ/4 microstrip line U8 and a λ/4 microstrip line U15, where the λ/4 microstrip line U8 and the λ/4 microstrip line U15 are signal lines, the pre-stage driving input matching network module U1, the pre-stage driving amplification module U2, the pre-stage driving output matching network module U3, the final-stage driving input matching network module U4, the final-stage driving amplification module U5, the final-stage driving output matching network module U6 and the 5dB directional coupler U7 are electrically connected in sequence, and an RFIN signal is electrically input end of the pre-stage driving input matching, the output end of the 5dB directional coupler U7 is electrically connected with an input matching network module U12 and an input matching network module U9, the output end of the 5dB directional coupler U7 is connected with the input matching network module U9 through a lambda/4 microstrip line U8, the output end of the input matching network module U9 is electrically connected with an auxiliary power amplifier U10, the output end of the auxiliary power amplifier U10 is electrically connected with an output network matching module U11, the output end of the output network matching module U11 is electrically connected with one end of a 35 ohm microstrip line, the output end of the input matching network module U12 is electrically connected with a main power amplifier U13, wherein the front-stage driving amplification module U2 adopts a LXK6105 type amplifier of Lexus department of Ministry of Japan to realize P-1 of gains 18dB and 0.5W, the final-stage driving amplification module U5 adopts an HTN7G27S020P type amplifier of Suhua Tai electronics to realize P, the main power amplifier U13 adopts an HTN7S09S060P type amplifier of Suzhou Huatai, the main power amplifier U13 is arranged as a main tube, the auxiliary power amplifier U10 adopts an HTN7G09S120P type amplifier of Suzhou Huatai, the auxiliary power amplifier U10 is arranged as a peak tube, the main power amplifier U13 and the auxiliary power amplifier U10 are matched to realize P-1 of gains of 18dB and 180W so as to meet the requirement of 800M &900M-LTE power amplification, the output end of the main power amplifier U13 is electrically connected with an output network matching module U14, the output end of the output network matching module U14 is also electrically connected with one end of a 35 ohm microstrip line, one end of the 35 ohm microstrip line is electrically connected with the output end of the output network matching module U14 through a lambda/4 microstrip line U15, the other end of the 35 ohm microstrip line is electrically connected with an antenna AT, and the 5dB directional coupler U7 adopts an Anaren 5dB coupler, the 5dB directional coupler U7 changes the input power distribution of the main power amplifier U13 and the auxiliary power amplifier U10 to realize the unequal input power distribution of the main 5dB coupling, and at the same time, 1 pi-type attenuation is added to the auxiliary power amplifier U10 to adjust the final input power distribution to achieve the optimal power amplifier traction, the power entering the main power amplifier U13 is more in the low power state, and the power entering the auxiliary power amplifier U10 is more in the high power state, so that after the main power amplifier U13 enters the voltage saturation state, the input power to the main power amplifier U13 is reduced, and the input power to the auxiliary power amplifier U10 is increased, thereby improving the efficiency of the Doherty power amplifier, realizing the output of the power amplifier average power 28W and the PAE efficiency 43 in the 800M &900M-LTE system, and in addition, the pre-stage driving amplification module U2, the final stage driving amplification module U5, the pre-stage driving amplification module U5, and the, The main power amplifier U13 and the auxiliary power amplifier U10 adopt home-made chips, so that the cost is greatly reduced.

The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.

Claims

1. An LTE-asymmetrical doherty power amplifier module based on a domestic LDMOS chip comprises a pre-stage driving input matching network module U1, a pre-stage driving amplification module U2, a pre-stage driving output matching network module U3, a final-stage driving input matching network module U4, a final-stage driving amplification module U5, a final-stage driving output matching network module U6, a 5dB directional coupler U7, a lambda/4 microstrip line U8 and a lambda/4 microstrip line U15, wherein the lambda/4 microstrip line U8 and the lambda/4 microstrip line U15 are signal lines, and the LTE-asymmetrical doherty power amplifier module is characterized in that the pre-stage driving input matching network module U1, the pre-stage driving amplification module U2, the pre-stage driving output matching network module U3, the final-stage driving input matching network module U4, the final-stage driving amplification module U5, the final-stage driving output matching network module U6 and the 5dB directional coupler U7 are electrically connected in sequence, and an RFIN signal is electrically input end of the pre-stage, an output end of the 5dB directional coupler U7 is electrically connected with an input matching network module U12 and an input matching network module U9, an output end of the 5dB directional coupler U7 is connected with the input matching network module U9 through a lambda/4 microstrip line U8, an output end of the input matching network module U9 is electrically connected with an auxiliary power amplifier U10, an output network matching module U11 is electrically connected with an output end of the auxiliary power amplifier U10, an output end of the output network matching module U11 is electrically connected with one end of a 35 ohm microstrip line, an output end of the input matching network module U12 is electrically connected with a main power amplifier U13, an output end of the main power amplifier U13 is electrically connected with an output network matching module U14, an output end of the output network matching module U14 is also electrically connected with one end of the 35 ohm microstrip line, one end of the 35 ohm microstrip line is electrically connected with an output end of the output network matching module U14 through the lambda/4U 15, and the other end of the 35 ohm microstrip line is electrically connected with an antenna AT.

2. The LTE-asymmetrical doherty power amplifier module based on the domestic LDMOS chip of claim 1, wherein the pre-driver amplifier module U2 adopts a LXK6105 amplifier.

3. The LTE-asymmetrical doherty power amplifier module based on the domestic LDMOS chip of claim 1, wherein the final driving amplifier module U5 adopts an HTN7G27S020P type amplifier.

4. The LTE-asymmetrical doherty power amplifier module based on the homemade LDMOS chip of claim 1, wherein the main power amplifier U13 adopts an HTN7S09S060P type amplifier, the main power amplifier U13 is arranged as a main tube, the auxiliary power amplifier U10 adopts an HTN7G09S120P type amplifier, and the auxiliary power amplifier U10 is arranged as a peak tube.

5. The LTE-asymmetrical doherty power amplifier module based on the homemade LDMOS chip of claim 1, wherein the 5dB directional coupler U7 adopts a 5dB coupler of Anaren.