CN212161791U - Miniature high-integration infrared proximity and ambient light brightness sensor - Google Patents

Abstract

The utility model discloses a miniature high integrated infrared is close and ambient light brightness sensor, relate to the sensor field, infrared isolation glue covers the periphery and the lower surface of transmitting chip, infrared isolation glue covers the periphery and the lower surface of integrated receiving induction chip simultaneously, the upper surface of transmitting chip, the upper surface of integrated receiving induction chip and the upper surface of infrared isolation glue are located the coplanar, infrared isolation glue is including the through-hole that link up infrared isolation glue lower surface, include conductive material in the through-hole, form the electricity and connect in the upper and lower surface of infrared isolation glue, therefore not only the crosstalk of infrared emission light has effectively been reduced, detection performance has been promoted, and the reliability of product has effectively been improved; due to the fact that the ultra-small size has absolute advantages, mobile phone manufacturers can save the internal space of the mobile phones, application flexibility is improved, production efficiency and yield are improved, and production period is shortened.

Description

Miniature high-integration infrared proximity and ambient light brightness sensor

Technical Field

The utility model belongs to the technical field of the sensor and specifically relates to a miniature high integrated infrared is close and ambient light brightness sensor.

Background

Many sensors are distributed in modern smart phones, and the sensors bring much convenience, for example, an infrared proximity sensor is mainly used for realizing a touch control prevention function of answering a phone call, and when a head of a user approaches the phone call, the touch control function of the phone call is turned off. The ambient light brightness sensor is used for sensing the change of an ambient light source, the brightness of the mobile phone panel is adjusted according to the brightness of the environment, when the ambient brightness becomes dark, the brightness of the mobile phone panel is prevented from stimulating eyes and then becomes dark, and when the ambient brightness becomes bright, the brightness of the mobile phone panel can be changed to be bright and increase the visibility. Both infrared proximity sensors and ambient light sensors are used to sense light and are often integrated in a single package to save space and energy. The size of the sensor can limit the thickness of the mobile phone and limit the space inside the mobile phone, but the size of the current infrared proximity and ambient light brightness sensor generally far exceeds the size of a chip, the thickness is generally 1.0mm, the thinnest infrared proximity and ambient light brightness sensor can reach 0.65mm-0.5mm, the manufacturing cost is high, the infrared crosstalk is large, and the detection performance is greatly influenced.

SUMMERY OF THE UTILITY MODEL

The inventor of the present invention provides a miniature high integrated infrared is close and ambient light brightness sensor to above-mentioned problem and technical demand, the technical scheme of the utility model as follows:

a micro high-integration infrared proximity and environment light brightness sensor comprises an emitting chip, an integration receiving induction chip and infrared isolation glue, wherein the emitting chip and the integration receiving induction chip are packaged in the infrared isolation glue through flip chip welding and injection molding technology, the infrared isolation glue covers the periphery and the lower surface of the emitting chip, the infrared isolation glue covers the periphery and the lower surface of the integration receiving induction chip, the infrared isolation glue isolates the emitting chip from the integration receiving induction chip, and the upper surface of the emitting chip, the upper surface of the integration receiving induction chip and the upper surface of the infrared isolation glue are located on the same plane; and the infrared isolation glue is also provided with a metal conducting layer for connecting the transmitting chip and the integrated receiving induction chip to carry out signal extraction.

The technical scheme is that when electric signal connecting pads are arranged on the upper surface of the transmitting chip and the upper surface of the integrated receiving induction chip, the metal conducting layer comprises a first rewiring layer, a second rewiring layer, a welding pad and a soldering ball, the infrared isolation adhesive is further provided with a through hole penetrating through the upper surface and the lower surface of the infrared isolation adhesive, a conducting material is filled in the through hole, the first rewiring layer is positioned on the upper surface of the infrared isolation adhesive and is communicated with the electric signal connecting pads of the chip and the conducting material in the through hole, the upper surface of the sensor is further provided with an upper surface passivation protecting layer, the upper surface passivation protecting layer is attached to the upper surface of the infrared isolation adhesive and covers the upper surface of the sensor including the first rewiring layer, and corresponding openings are arranged above the transmitting area of the transmitting chip and above the receiving induction area of the integrated receiving induction chip, the lower surface of the infrared isolation adhesive is provided with the welding pad, the welding pad is provided with a metallization layer, and tin solder balls are manufactured on the metallization layer, the second rewiring layer is positioned on the lower surface of the infrared isolation glue, the lower surface of the sensor is also provided with a lower surface passivation protective layer which is attached to the lower surface of the infrared isolation adhesive, and covers the second redistribution layer, the lower passivation layer has an opening at the pad, the second redistribution layer communicates the conductive material in each via with conductive material in other vias or with a pad, and the transmitting chip and the electric signal connecting pad of the integrated receiving induction chip are conducted on the lower surface of the infrared isolation glue through the first rewiring layer, the conductive material in the through hole and the second rewiring layer.

The further technical scheme is that when the upper surface and the lower surface of the transmitting chip are both provided with electric signal connecting pads, the metal conducting layer comprises a first rewiring layer, a second rewiring layer, a welding pad and a soldering ball, the infrared isolation glue is provided with through holes penetrating through the lower surface of the infrared isolation glue and the lower surface of the transmitting chip, meanwhile, the infrared isolation glue is provided with through holes penetrating through the lower surface of the infrared isolation glue and the lower surface of the transmitting chip, each through hole is filled with a conductive material, the electric signal connecting pads at the bottom of the transmitting chip are communicated with the conductive materials in the through holes, the first rewiring layer is positioned on the upper surface of the infrared isolation glue and is communicated with the electric signal connecting pads of the chip and the conductive materials in each through hole, the upper surface of the sensor is also provided with an upper surface passivation protective layer, and the upper surface passivation protective, the upper surface of the sensor including the first rewiring layer is covered, corresponding openings are formed in the upper portion of the transmitting area of the transmitting chip and the upper portion of the receiving sensing area of the integrated receiving sensing chip, the welding pads are manufactured on the lower surface of the infrared isolation glue, the metallization layers are arranged at the welding pads, tin welding balls are manufactured on the metallization layers, the second rewiring layer is communicated with conductive materials in other through holes of the lower surface of the infrared isolation glue or communicated with the welding pads, a lower surface passivation protection layer is further arranged on the lower surface of the sensor and is attached to the lower surface of the infrared isolation glue to cover the second rewiring layer, openings are reserved at the welding pads of the lower surface passivation protection layer, and the electric signal connecting pads of the transmitting chip and the integrated receiving sensing chip pass through the first rewiring layer, And conducting the conducting material in each through hole and the second rewiring layer on the lower surface of the infrared isolation glue.

The sensor further comprises an emitting lens and a receiving lens, wherein for any lens in the emitting lens and the receiving lens, the lens is directly formed on the upper surface of the infrared isolation glue in an injection molding mode, the optical center of the emitting lens and the center of an emitting area of the emitting chip are on the same straight line, and the optical center of the receiving lens and the center of a receiving area of the integrated receiving induction chip are on the same straight line.

The sensor further comprises a cover plate, wherein the cover plate is positioned on the upper surface of the infrared isolation glue, and the cover plate comprises a first through hole positioned above the transmitting chip and a second through hole positioned above the integrated receiving induction chip.

The sensor further comprises an emitting lens and a receiving lens, wherein the optical center of the emitting lens and the center of the emitting area of the emitting chip are on the same straight line, and the optical center of the receiving lens and the center of the receiving area of the integrated receiving induction chip are on the same straight line;

for any lens in the transmitting lens and the receiving lens, the lens is fixed at the corresponding opening of the cover plate after being molded, is attached to the cover plate and has a gap with the upper surface of the infrared isolation glue; or the lens is directly formed on the upper surface of the infrared isolation glue in an injection molding mode, and a gap exists between the lens and the cover plate.

Drawings

FIG. 1 is a block diagram of a sensor of the present application.

FIG. 2 is a cross-sectional view of one configuration of the sensor of the present application.

Fig. 3 is another block diagram of the sensor of the present application.

FIG. 4 is a cross-sectional view of another configuration of the sensor of the present application.

Fig. 5 is a structural sectional view of a cover plate of the sensor of the present application.

Fig. 6 shows a block diagram of two chips flip-chip mounted on a planar carrier.

Fig. 7 shows a block diagram after injection molding of an infrared isolation paste on a planar carrier.

Fig. 8 shows a structure diagram after separating the infrared isolation glue and the two chips from the planar carrier.

FIG. 9 shows a block diagram of the electrical connections formed on the upper surface of the sensor.

FIG. 10 shows a block diagram of the formation of an upper surface passivation protective layer on the upper surface of the sensor.

FIG. 11 shows a block diagram of the electrical connections formed on the lower surface of the sensor.

Fig. 12 shows a structural view of forming a lower surface passivation protective layer on the lower surface of the sensor.

Fig. 13 shows a structural view of forming an electrical connection on the lower surface of the sensor.

Fig. 14 shows a structural view of forming a lower surface passivation protective layer on the lower surface of the sensor.

Fig. 15 shows a structure of a solder ball added to a pad.

Fig. 16 is a view showing a structure in which a cover plate is added to the upper surface of the infrared isolation adhesive.

Detailed Description

The following describes the embodiments of the present invention with reference to the accompanying drawings.

The application discloses miniature high integrated infrared is close and ambient light brightness sensor please refer to the structure chart shown in fig. 1 to 4, this infrared is close and ambient light brightness sensor includes transmitting chip 1, integrated receiving sensing chip 2 and infrared isolating glue 3, wherein, transmitting chip 1 has infrared emission function (the wavelength is generally between 800nm-1000 nm), integrated receiving sensing chip 2 integrates infrared is close and ambient light brightness sensing function, integrated receiving sensing chip 2 is used for outputting digital signal with analog photocurrent through enlargeing and analog-to-digital conversion. The emitting chip 1 may be an infrared LED chip/VCSEL chip, etc., the integrated receiving and sensing chip 2 may be a commercially available chip such as Si1141 chip, or a chip with the above functions and designed by self-development, and the infrared isolation glue 3 may be a black glue or a transparent glue with infrared isolation property for preventing infrared crosstalk.

Infrared isolation is glued 3 and is covered all around and the lower surface of emission chip 1, and infrared isolation is glued 3 and is covered around and the lower surface of integrated receiving induction chip 2 simultaneously, and infrared isolation is glued 3 and is kept apart emission chip 1 and integrated receiving induction chip 2, and emission chip 1 and integrated receiving induction chip 2 set up in infrared isolation is glued 3 through the flip-chip bonding mode. The upper surface of the transmitting chip 1, the upper surface of the integrated receiving induction chip 2 and the upper surface of the infrared isolation glue 3 are positioned on the same plane. The infrared isolation glue 3 comprises a through hole 4, the through hole 4 penetrates through the upper surface and the lower surface of the infrared isolation glue 3, and a conductive material such as copper is filled in the through hole 4.

The infrared isolation glue 3 is provided with a metal conducting layer for connecting the transmitting chip 1 and the integrated receiving induction chip 2 to carry out communication and lead out, the total thickness of the infrared isolation glue and the metal conducting layer is less than 0.3mm, and the re-wiring technology (RDL) changes the joint position of an IC circuit originally designed through a wafer level metal wiring process and a bump process, so that the IC can be suitable for different packaging forms. The metal conducting Layer comprises a first heavy wiring Layer 5(RDL1), an upper surface Passivation protective Layer 51(Passivation Layer1), a second heavy wiring Layer 6(RDL2), a lower surface Passivation protective Layer 61(Passivation Layer2), a welding pad 8 and a soldering ball 9, wherein the infrared isolation adhesive 3 is further provided with a through hole 4 penetrating through the upper surface and the lower surface of the infrared isolation adhesive 3, the through hole 4 is filled with a conducting material, the first heavy wiring Layer 5 is positioned on the upper surface of the infrared isolation adhesive 3 and is communicated with an electric signal connecting pad 7 of the chip and the conducting material in the through hole 4, the upper surface Passivation protective Layer 51 is positioned on the upper surface of the sensor, the upper surface Passivation protective Layer 51 is attached to the upper surface of the infrared isolation adhesive and covers the upper surface of the first heavy wiring Layer 5, corresponding openings are reserved above an emitting area of the emitting chip 1 and an receiving induction area of the integrated receiving induction chip 2, the lower surface of the infrared isolation adhesive 3 is provided with the welding pad 8, the position of a welding pad 8 is provided with a metallization layer, tin solder balls are manufactured on the metallization layer, a second redistribution layer 6 is positioned on the lower surface of the infrared isolation glue 3, the second redistribution layer 6 enables conductive materials in the through holes 4 to be communicated with conductive materials in other through holes or with the welding pad 8, a lower surface passivation protection layer 61 is positioned on the lower surface of the sensor, the lower surface passivation protection layer 61 is attached to the lower surface of the infrared isolation glue 3 and covers the second redistribution layer 6, an opening is reserved in the position of the welding pad 8, and the transmitting chip 1 and an electric signal connecting pad 7 of the integrated receiving sensing chip 2 are conducted on the lower surface of the infrared isolation glue 3 through the first redistribution layer 5, the conductive materials in the through holes 4 and the second redistribution layer 6.

The upper passivation layer 51 and the lower passivation layer 61 may be made of SiN, SiON, or Polymer.

In another embodiment, the lower surface of the transmitting chip 1 is also provided with an electrical signal connecting pad 7, so that the sensor is provided with a through hole 4 from the lower surface of the transmitting chip 1 to the lower surface of the infrared isolation glue 3.

The sensor is also installed to include apron 10 and two camera lenses that are located the chip top, has following mounting means:

(1) this sensor only installs two camera lenses, does not install the apron: the sensor comprises a transmitting lens 13 and a receiving lens 14, wherein for any one lens of the transmitting lens 13 and the receiving lens 14, the lens is directly formed on the upper surface of an infrared isolation adhesive 3 in an injection molding mode, the optical center of the transmitting lens 13 and the center of the transmitting area of a transmitting chip 1 are on the same straight line, and the optical center of the receiving lens 14 and the center of the receiving area of an integrated receiving induction chip 2 are on the same straight line.

(2) This sensor only installs apron 10, does not install two camera lenses: the sensor further comprises a cover plate 10, wherein the cover plate 10 is located on the upper surface of the infrared isolation glue 3, and the cover plate 10 comprises a first through hole 11 located above the transmitting chip 1 and a second through hole 12 located above the integrated receiving sensing chip 2.

(3) This sensor has both installed two camera lenses, installs apron 10 again: as shown in fig. 5, the sensor further includes a transmitting lens 13 and a receiving lens 14, and the optical center of the transmitting lens 13 is on the same straight line with the center of the transmitting area of the transmitting chip 1, and the optical center of the receiving lens 14 is on the same straight line with the center of the receiving area of the integrated receiving and sensing chip 2; for any one of the transmitting lens 13 and the receiving lens 14, after the lens is molded, the lens is fixed at a corresponding opening of the cover plate 10 and attached to the cover plate 10, and a gap is formed between the lens and the upper surface of the infrared isolation glue 3; or the lens is directly formed on the upper surface of the infrared isolation glue 3 in an injection molding mode and has a gap with the cover plate 10.

The cover plate 10 is made of an infrared insulating material including any one of an organic material LCP, a black gel, a ceramic, and a metal.

Further, in the second and third cases, the total thickness of the cover plate 10, the infrared isolation glue 3 and the metal conductive layer is less than 0.5 mm; also, in the first case, the cover plate 10 is not mounted, and the total thickness of the lens, the infrared blocking paste 3 and the metal conductive layer is less than 0.5 mm.

The sensor disclosed in the present application has no particular manufacturing method, and an example of an embodiment is given:

step 1: as shown in fig. 6, the transmitting chip 1 and the integrated receiving and sensing chip 2 are fixed on a planar carrier 15 at intervals in a flip-chip manner, the planar carrier 15 is a manufacturing plane, the planar carrier 15 includes an adhesive film thereon, and the upper surface of the transmitting chip 1 and the upper surface of the integrated receiving and sensing chip 2 are fixed on the planar carrier 15 through the adhesive film due to the flip-chip manner;

step 2: as shown in fig. 7, an infrared isolation glue 3 is injected on the planar carrier 15, the infrared isolation glue 3 plays a role of isolating infrared light, the infrared isolation glue 3 covers the periphery and the lower surface of the emitting chip 1, meanwhile, the infrared isolation glue 3 covers the periphery and the lower surface of the integrated receiving induction chip 2, the infrared isolation glue 3 is filled in the interval area between the transmitting chip 1 and the integrated receiving induction chip 2 to isolate the two chips, the lower surface of the infrared isolation glue 3 is attached to the plane carrier 15, and the infrared isolation material is polished until reaching a preset thickness to form the infrared isolation glue 3, the preset thickness is the minimum thickness of the lower surface of the infrared isolation glue from the lower surface of the transmitting chip or the lower surface of the integrated receiving induction chip, wherein the lower surface of the transmitting chip and the lower surface of the integrated receiving and sensing chip are not necessarily located on the same horizontal plane, and the predetermined thickness is set to be 0.025mm to 0.05 mm;

and step 3: as shown in fig. 8, the transmitting chip 1, the integrated receiving sensing chip 2 and the infrared isolation adhesive 3 are separated from the planar carrier 15, the upper surface of the transmitting chip 1, the upper surface of the integrated receiving sensing chip 2 and the upper surface of the infrared isolation adhesive 3 are on the same horizontal plane, and a through hole 4 is formed in the infrared isolation adhesive 3, wherein the through hole 4 penetrates through the upper and lower surfaces of the infrared isolation adhesive 3;

in another embodiment, since the lower surface of the transmitting chip 1 is provided with the electrical signal connecting pad 7, the sensor is further provided with the through hole 4 from the lower surface of the transmitting chip 1 to the lower surface of the infrared isolation glue 3.

And 4, step 4: as shown in fig. 9 and 10, filling a conductive material, such as copper, into the through hole 4, fabricating a first redistribution Layer 5 and an upper Passivation Layer 51(Passivation Layer1) on the upper surface of the infrared isolation glue 3, where the upper Passivation Layer 51 is attached to the upper surface of the infrared isolation glue 3, covers the upper portion of the first redistribution Layer 5, and leaves corresponding openings above the emitting region of the emitting chip 1 and above the receiving region of the integrated receiving sensor chip 2, and the first redistribution Layer 5 connects the electrical signal connection pad 7 of the chip and the conductive material in the through hole 4;

and 5: as shown in fig. 11 to 14, a pad 8, a second redistribution Layer 6 and a lower Passivation Layer 61(Passivation Layer1) are formed on the lower surface of the infrared isolation glue 3, the second redistribution Layer 6 is located on the lower surface of the infrared isolation glue 3, the second redistribution Layer 6 connects the conductive material in each through hole 4 with the conductive material in other through holes or with the pad 8, the lower Passivation Layer 61(Passivation Layer2) is attached to the lower surface of the infrared isolation glue 3, covers the second redistribution Layer 6, and leaves an opening at the pad 8, and the electric signal connection pads 7 of the transmitting chip 1 and the integrated receiving sensing chip 2 are connected on the lower surface of the infrared isolation glue 3 through the first redistribution Layer 5, the conductive material in the through hole 4, and the second redistribution Layer 6;

step 6: as shown in fig. 15, a metallization layer (UBM) is plated on the pad 8 on the lower surface of the infrared isolation glue 3, and a tin solder ball 9 is made on the metallization layer;

and 7: as shown in fig. 16, a cover plate 10 is added on the upper surface of the infrared isolation glue 3, the cover plate 10 includes a first through hole 11 located above the transmitting chip 1 and a second through hole 12 located above the integrated receiving sensing chip 2, and the transmitting lens 13 is made in the first through hole 11 and the receiving lens 14 is made in the second through hole 12.

What has been described above is only a preferred embodiment of the present application, and the present invention is not limited to the above embodiments. It is to be understood that other modifications and variations directly derivable or suggested by those skilled in the art without departing from the spirit and scope of the present invention are to be considered as included within the scope of the present invention.

Claims (6)

1. A micro high-integration infrared proximity and environment light brightness sensor is characterized by comprising a transmitting chip, an integration receiving induction chip and infrared isolation glue, wherein the transmitting chip and the integration receiving induction chip are packaged in the infrared isolation glue through flip chip bonding and injection molding technologies, the periphery and the lower surface of the transmitting chip are covered by the infrared isolation glue, the periphery and the lower surface of the integration receiving induction chip are covered by the infrared isolation glue, the transmitting chip and the integration receiving induction chip are isolated by the infrared isolation glue, and the upper surface of the transmitting chip, the upper surface of the integration receiving induction chip and the upper surface of the infrared isolation glue are located on the same plane; and the infrared isolation glue is also provided with a metal conducting layer for connecting the transmitting chip and the integrated receiving induction chip to carry out signal extraction.

2. The micro high-integration infrared proximity and ambient light brightness sensor according to claim 1, wherein when electrical signal connection pads are disposed only on the upper surface of the emitting chip and the upper surface of the integrated receiving sensing chip, the metal conductive layer comprises a first redistribution layer, a second redistribution layer, a bonding pad and a solder ball, the infrared isolation adhesive is further provided with a through hole penetrating through the upper and lower surfaces of the infrared isolation adhesive, the through hole is filled with a conductive material, the first redistribution layer is disposed on the upper surface of the infrared isolation adhesive and is communicated with the electrical signal connection pads of the chip and the conductive material in the through hole, the upper surface of the sensor is further provided with an upper surface passivation protection layer, the upper surface passivation protection layer is attached to the upper surface of the infrared isolation adhesive and covers the upper surface of the sensor including the first redistribution layer, and the top of the transmitting area of the transmitting chip and the top of the receiving induction area of the integrated receiving induction chip are provided with corresponding openings, the lower surface of the infrared isolation glue is provided with the welding pad, the welding pad is provided with a metallization layer, tin solder balls are manufactured on the metallization layer, the second rewiring layer is positioned on the lower surface of the infrared isolation glue, the lower surface of the sensor is also provided with a lower passivation protective layer, the lower passivation protective layer is attached to the lower surface of the infrared isolation glue and covers the second rewiring layer, the opening is reserved at the welding pad by the lower passivation protective layer, the second rewiring layer communicates the conductive materials in the through holes with the conductive materials in other through holes or with the welding pad, and the electric signal connecting pad of the transmitting chip and the integrated receiving induction chip passes through the first rewiring layer, And the conductive material in the through hole and the second rewiring layer are conducted on the lower surface of the infrared isolation glue.

3. The micro high-integration infrared proximity and ambient light brightness sensor according to claim 1, wherein when the upper surface and the lower surface of the emitting chip are both provided with electrical signal connection pads, the metal conductive layer comprises a first redistribution layer, a second redistribution layer, a bonding pad and a solder ball, the infrared isolation adhesive is provided with a through hole penetrating through the upper surface and the lower surface of the infrared isolation adhesive, meanwhile, the infrared isolation adhesive is provided with a through hole penetrating through the lower surface of the infrared isolation adhesive to the lower surface of the emitting chip, each through hole is filled with a conductive material, the electrical signal connection pads at the bottom of the emitting chip are communicated with the conductive material in the through hole, the first redistribution layer is positioned on the upper surface of the infrared isolation adhesive and is communicated with the electrical signal connection pads of the chip and the conductive material in each through hole, the upper surface of the sensor is further provided with an upper surface, the upper surface passivation protective layer is attached to the upper surface of the infrared isolation adhesive to cover the upper surface of the sensor including the first rewiring layer, corresponding openings are formed above the transmitting area of the transmitting chip and the receiving sensing area of the integrated receiving sensing chip, the lower surface of the infrared isolation adhesive is provided with the welding pad, a metallization layer is arranged at the welding pad, tin welding balls are arranged on the metallization layer and communicated with the second rewiring layer and other conducting materials in the through holes of the lower surface of the infrared isolation adhesive or communicated with the welding pad, the lower surface passivation protective layer is further arranged on the lower surface of the sensor, is attached to the lower surface of the infrared isolation adhesive and covers the second rewiring layer, and the openings are reserved at the welding pad by the lower surface passivation protective layer, and the transmitting chip and the electric signal connecting pad of the integrated receiving induction chip are conducted on the lower surface of the infrared isolation glue through the first rewiring layer, the conductive material in each through hole and the second rewiring layer.

4. The micro high-integration infrared proximity and ambient light brightness sensor according to any one of claims 1 to 3, wherein the sensor further comprises an emitting lens and a receiving lens, the lens is directly formed on the upper surface of the infrared isolation glue in an injection molding manner for any one of the emitting lens and the receiving lens, the optical center of the emitting lens and the center of the emitting area of the emitting chip are on the same straight line, and the optical center of the receiving lens and the center of the receiving area of the integrated receiving sensing chip are on the same straight line.

5. The miniature high integrated infrared proximity and ambient light brightness sensor according to any one of claims 1-3, further comprising a cover plate positioned on an upper surface of said infrared isolation glue, said cover plate comprising a first through hole positioned above said transmitting chip and a second through hole positioned above said integrated receiving sensing chip.

6. The miniature high integrated infrared proximity and ambient light brightness sensor according to claim 5, wherein said sensor further comprises an emitting lens and a receiving lens, and the optical center of said emitting lens and the center of the emitting area of said emitting chip are on the same straight line, and the optical center of said receiving lens and the center of the receiving area of said integrated receiving sensing chip are on the same straight line;

for any lens in the transmitting lens and the receiving lens, the lens is fixed at the corresponding opening of the cover plate after being molded, is attached to the cover plate and has a gap with the upper surface of the infrared isolation glue; or the lens is directly formed on the upper surface of the infrared isolation glue in an injection molding mode, and a gap exists between the lens and the cover plate.

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