CN212051640U - Plasma enhanced chemical vapor deposition device - Google Patents
Plasma enhanced chemical vapor deposition device Download PDFInfo
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- CN212051640U CN212051640U CN202020553872.1U CN202020553872U CN212051640U CN 212051640 U CN212051640 U CN 212051640U CN 202020553872 U CN202020553872 U CN 202020553872U CN 212051640 U CN212051640 U CN 212051640U
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Abstract
The utility model provides a plasma enhanced chemical vapor deposition device, which comprises a reaction chamber for vapor deposition, a microwave source reactor above the reaction chamber, a sample stage is arranged in the middle of the reaction chamber, the sample stage is arranged on a lifting device, the bottom end of the lifting device is fixed on a sealing plate, the sealing plate is arranged at the inlet of the sample stage, the bottom end of the sealing plate is fixed on a driving plate, hydraulic driving devices are arranged at the left and right sides of the driving plate, the hydraulic driving devices comprise telescopic rods, the bottom ends of the telescopic rods at the two sides are respectively fixed at the side surface of the driving plate, a sampling chamber is arranged below the driving plate, a blowing device and an adsorption net are respectively arranged at the left and right sides of the sampling chamber, the adsorption net is detachably arranged on the side wall of the sampling chamber, the utility model has convenient sampling and convenient use, the plasma generating device and the like on the upper part can not be damaged by sampling from the lower part, and the epitaxial growth environment is clean and pollution-free in the sampling process.
Description
Technical Field
The utility model relates to a vapor deposition technical field, in particular to plasma enhanced chemical vapor deposition device.
Background
Vapor deposition techniques utilize physical and chemical processes that occur in the vapor phase to form functional or decorative metallic, non-metallic, or compound coatings on the surface of a workpiece. The vapor deposition technology is based on a film forming mechanism and comprises vacuum evaporation, sputtering coating, plasma vapor deposition and the like; wherein, plasma vapor deposition's application is also more and more extensive, and the sample is placed on the sample platform in plasma enhanced chemical vapor deposition device, and traditional vertical lift puts the structure of drawing a design, has operation space limited, uses inconvenient, production efficiency low, the plasma generating device on fragile upper portion etc. and is very inconvenient in the use of reality, moreover the sample in-process needs clean epitaxial growth environment.
SUMMERY OF THE UTILITY MODEL
In order to overcome the defects of the prior art, the technical scheme provided by the utility model is that the plasma enhanced chemical vapor deposition device comprises a reaction chamber for vapor deposition, a microwave source reactor above the reaction chamber, a sample stage arranged in the middle of the reaction chamber, the sample stage arranged on a lifting device, the bottom end of the lifting device fixed on a sealing plate, the bottom end of the reaction chamber provided with a sample stage inlet and outlet, the sealing plate arranged at the sample stage inlet and outlet, the bottom end of the sealing plate fixed on a driving plate, hydraulic driving devices arranged on the left and right sides of the driving plate, the hydraulic driving devices comprising telescopic rods, the bottom ends of the telescopic rods on both sides fixed on the side of the driving plate respectively, a sampling chamber arranged below the driving plate, a purging device and an adsorption net arranged on the left and right sides of the sampling chamber respectively, the adsorption net is detachably arranged on the side wall of the sampling chamber.
Preferably, the lifting device comprises a lifting hydraulic rod and a lifting hydraulic cylinder, the top end of the lifting hydraulic rod is fixed in the middle of the bottom end of the sample stage, the bottom end of the lifting hydraulic rod is arranged at the output end of the lifting hydraulic cylinder, and the base of the lifting hydraulic cylinder is fixed on the upper surface of the sealing plate.
Preferably, the top end of the telescopic rod is arranged at the output end of the telescopic hydraulic cylinder, and the base of the telescopic hydraulic cylinder is fixed at the bottoms of the reaction chambers on the two sides of the inlet and the outlet of the sample table.
Preferably, the purging device comprises a purging fan and a purging pipe, the purging pipe is communicated with the purging fan, the purging fan is fixed outside the purging box, and an air outlet of the purging pipe is aligned to one side of the sample table.
Preferably, guide rods are arranged on the left side and the right side of the drive plate and penetrate through the drive plate to be vertically and parallelly arranged.
Preferably, the top end of the guide rod is fixed at the bottom of the reaction cavity, and the bottom of the guide rod is fixedly provided with a limiting block.
Preferably, a baffle is arranged on one side of an inlet and an outlet of the sample stage, a push-pull rod is arranged on one side of the baffle and horizontally arranged, the outer end of the push-pull rod is fixed on the side surface of the baffle, the push-pull rod is arranged at the output end of a push-pull hydraulic cylinder, and the push-pull hydraulic cylinder is fixed on the side surface of the reaction chamber.
Preferably, a sealing strip is arranged around the sealing plate, and the sealing plate and the sample table inlet and outlet can be installed in a sealing mode.
The beneficial effects of the utility model are embodied in the following aspect:
the utility model discloses a sample platform below is provided with on the closing plate, the closing plate bottom mounting is on the drive plate, the drive plate can be with the vertical reaction chamber that shifts out of sample platform by the telescopic link control, takes out reaction sample in the sampling room, the baffle covers the sample platform access & exit under the drive of push-and-pull rod, the drive plate below is provided with the device that sweeps in the sampling room and sweeps the sample platform totally, the gas that the sample platform blown is discharged after adsorbing through adsorbing the net, and convenient sampling, it is convenient to use, and the plasma generating device etc. on upper portion can not be damaged in the sample from the below, and the epitaxial growth environment is clean pollution-free in the sampling process moreover.
Drawings
FIG. 1 is a schematic structural view of the present invention;
fig. 2 is a partially enlarged view of a portion a in fig. 1.
In the shown attached drawing, a reaction chamber 1, a sample table 2, a lifting hydraulic rod 3, a lifting hydraulic cylinder 4, a sealing plate 5, a sample table inlet and outlet 6, a sealing strip 7, a driving plate 8, a telescopic rod 9, a telescopic hydraulic cylinder 10, a baffle 11, a push-pull rod 12, a sampling chamber 13, an adsorption net 14, a purging fan 15, a purging pipe 16, a guide rod 17, a limiting block 18 and a push-pull hydraulic pressure 19.
Detailed Description
The present invention is further described in detail below with reference to the drawings so that those skilled in the art can implement the invention with reference to the description.
As shown in fig. 1-2, a plasma enhanced chemical vapor deposition apparatus comprises a reaction chamber 1 for vapor deposition, a microwave source reactor above the reaction chamber 1, a sample stage 2 disposed in the middle of the reaction chamber 1, the sample stage 2 disposed on a lifting device, the bottom end of the lifting device fixed on a sealing plate 5, the lifting device comprising a lifting hydraulic rod 3 and a lifting hydraulic cylinder 4, the top end of the lifting hydraulic rod 3 fixed in the middle of the bottom end of the sample stage 2, the bottom end of the lifting hydraulic rod 3 disposed at the output end of the lifting hydraulic cylinder 4, the base of the lifting hydraulic cylinder 4 fixed on the upper surface of the sealing plate 5, the lifting device capable of adjusting the height of the sample stage 2 in the reaction chamber 1, the bottom end of the reaction chamber 1 disposed with a sample stage inlet/outlet 6, the sealing plate 5 disposed at the sample stage inlet/outlet 6, the sealing plate 5 and the sample platform inlet and outlet 6 are installed in a sealing mode, the sealing plate 5 and the reaction chamber 1 are in a sealing state when a sample reacts, a sealing strip 7 is arranged around the sealing plate 5, the bottom end of the sealing plate 5 is fixed on a driving plate 8, hydraulic driving devices are arranged on the left side and the right side of the driving plate 8 and comprise telescopic rods 9, the bottom ends of the telescopic rods 9 on the two sides are respectively fixed on the side surface of the driving plate 8, the top end of the telescopic rod 9 is arranged at the output end of a telescopic hydraulic cylinder 10, the base of the telescopic hydraulic cylinder 10 is fixed at the bottom of the reaction chamber 1 on the two sides of the sample platform inlet and outlet 6, the telescopic hydraulic cylinder 10 can control the telescopic rods 9 to extend and retract so as to move the driving plate 8 at the bottom end of the telescopic rod 9, the device comprises a push-pull rod 12, a baffle 11, a push-pull hydraulic pressure 19, a sampling chamber 13, a sampling door, a purging device and an adsorption net 14, wherein the push-pull rod 12 is horizontally arranged, the outer end of the push-pull rod 12 is fixed on the side surface of the baffle 11, the push-pull rod 12 is arranged at the output end of the push-pull hydraulic pressure 19, the push-pull hydraulic pressure 19 is fixed on the side surface of a reaction chamber 1, the push-pull hydraulic pressure rod moves the baffle 11 under the driving of the push-pull hydraulic pressure 19, when a sample platform 2 descends to the outside of the reaction chamber 1 along with a driving plate 8, the baffle 11 covers the inlet and outlet 6 of the sample platform, the sampling chamber 13 is arranged below the driving plate 8, the sampling chamber 13 can be provided with the sampling door sealed with the sampling chamber 13, the sampling door is opened to take out a sample and then closed, the left side and the, sweep fan 15 and fix and sweep the case outside, sweep 2 one sides of 2 sample platforms in 16 ventholes centering of pipe, the 8 left and right sides of drive plate are provided with guide bar 17, guide bar 17 passes the vertical and parallel arrangement of 8 drive plates, the guide bar 17 top is fixed in reaction chamber 1 bottom, and the fixed stopper 18 that is provided with in bottom, when drive plate 8 drops to the limiting plate top, sweep fan 15 and blow off clean gas and clear up sample platform 2.
The working process of the utility model does lifting device control sample platform 2 descends to the nearest distance from closing plate 5, drive plate 8 is controlled by telescopic link 9 and is shifted out reaction chamber 1 with sample platform 2 is vertical, baffle 11 covers sample platform access & exit 6 under the drive of push-and-pull rod 12, directly takes out the reaction sample from sampling chamber 13, the device that sweeps in sampling chamber 13 sweeps sample platform 2 totally, the gas that sample platform 2 blown is discharged after adsorbing through adsorption net 14, can be provided with central control system in reaction chamber 1 outside, central control system adopt the singlechip commonly used can, central control system respectively with hydraulic cylinder 4, flexible pneumatic cylinder 10, push-and-pull hydraulic pressure 1919 and sweep fan 15 electricity and be connected, central control system controls hydraulic cylinder 4 according to the procedure of setting for, flexible pneumatic cylinder 10, The push-pull hydraulic pressure 19 and the purge fan 15 sequentially complete the above operations.
While embodiments of the invention have been disclosed above, it is not intended to be limited to the applications listed in the specification and the examples. It can be applicable to various and be fit for the utility model discloses a field completely. Additional modifications will readily occur to those skilled in the art. The invention is therefore not to be limited to the specific details and illustrations shown and described herein, without departing from the general concept defined by the claims and their equivalents.
Claims (8)
1. A plasma enhanced chemical vapor deposition device comprises a reaction chamber for vapor deposition, a microwave source reactor above the reaction chamber, a sample stage arranged in the middle of the reaction chamber and arranged on the lifting device, it is characterized in that the bottom end of the lifting device is fixed on the sealing plate, the bottom end of the reaction cavity is provided with a sample platform inlet and outlet, the sealing plate is arranged at the inlet and the outlet of the sample stage, the bottom end of the sealing plate is fixed on the driving plate, the left side and the right side of the driving plate are provided with hydraulic driving devices, the hydraulic driving devices comprise telescopic rods, the bottom ends of the telescopic rods at the two sides are respectively fixed on the side surface of the driving plate, a sampling chamber is arranged below the driving plate, the left and right sides of sampling chamber is provided with respectively and sweeps device and adsorption net, adsorption net detachable sets up on the lateral wall of sampling chamber.
2. The PECVD apparatus as recited in claim 1, wherein the elevating device comprises an elevating hydraulic rod and an elevating hydraulic cylinder, the top end of the elevating hydraulic rod is fixed at the middle of the bottom end of the sample stage, the bottom end of the elevating hydraulic rod is arranged at the output end of the elevating hydraulic cylinder, and the base of the elevating hydraulic cylinder is fixed on the upper surface of the sealing plate.
3. The PECVD apparatus as recited in claim 1, wherein the top end of the telescopic rod is disposed at the output end of a telescopic hydraulic cylinder, and the base of the telescopic hydraulic cylinder is fixed at the bottom of the reaction chamber at both sides of the inlet and outlet of the sample stage.
4. The PECVD apparatus as recited in claim 1, wherein the purging device comprises a purging blower and a purging tube, the purging tube is in communication with the purging blower, the purging blower is fixed outside the purging box, and an outlet hole of the purging tube is aligned with one side of the sample stage.
5. A pecvd apparatus as recited in claim 1, wherein guide rods are provided on both left and right sides of the drive plate, the guide rods being vertically and parallel arranged through the drive plate.
6. A plasma enhanced chemical vapor deposition apparatus according to claim 5, wherein the top end of the guiding rod is fixed at the bottom of the reaction chamber, and the bottom is fixedly provided with a limiting block.
7. The apparatus according to claim 1, wherein a baffle is disposed at one side of the inlet/outlet of the sample stage, a push-pull rod is disposed at one side of the baffle and horizontally disposed, the outer end of the push-pull rod is fixed at the side of the baffle, the push-pull rod is disposed at the output end of a push-pull hydraulic cylinder, and the push-pull hydraulic cylinder is fixed at the side of the reaction chamber.
8. The apparatus according to claim 1, wherein a sealing strip is disposed around the sealing plate, and the sealing plate is sealably mounted with the sample stage inlet/outlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020553872.1U CN212051640U (en) | 2020-04-15 | 2020-04-15 | Plasma enhanced chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020553872.1U CN212051640U (en) | 2020-04-15 | 2020-04-15 | Plasma enhanced chemical vapor deposition device |
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| Publication Number | Publication Date |
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| CN212051640U true CN212051640U (en) | 2020-12-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202020553872.1U Active CN212051640U (en) | 2020-04-15 | 2020-04-15 | Plasma enhanced chemical vapor deposition device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112760617A (en) * | 2020-12-30 | 2021-05-07 | 上海埃原半导体设备有限公司 | Non-metal reaction chamber for chemical vapor deposition and use method thereof |
-
2020
- 2020-04-15 CN CN202020553872.1U patent/CN212051640U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112760617A (en) * | 2020-12-30 | 2021-05-07 | 上海埃原半导体设备有限公司 | Non-metal reaction chamber for chemical vapor deposition and use method thereof |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A plasma enhanced chemical vapor deposition device Effective date of registration: 20220928 Granted publication date: 20201201 Pledgee: China Construction Bank Corporation Dalian Free Trade Zone sub branch Pledgor: Dalian nuohao Lianheng Electronic Technology Co.,Ltd. Registration number: Y2022980016777 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right |