CN212011593U - Ultra-high-speed laser driving circuit with adjustable pulse width - Google Patents
Ultra-high-speed laser driving circuit with adjustable pulse width Download PDFInfo
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- CN212011593U CN212011593U CN202020667795.2U CN202020667795U CN212011593U CN 212011593 U CN212011593 U CN 212011593U CN 202020667795 U CN202020667795 U CN 202020667795U CN 212011593 U CN212011593 U CN 212011593U
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Abstract
The utility model provides a pulse width adjustable hypervelocity laser instrument drive circuit, include: programmable delay chip, high-speed AND gate chip; the pulse signal output end of the singlechip is connected to a pulse signal input pin of the programmable delay chip; an output pin of the programmable delay chip is connected to a first input end of the high-speed AND gate chip; the pulse signal is connected to a second input end of the high-speed AND gate chip after passing through the fixed delay module; the high-speed AND gate chip outputs a narrow pulse width signal, and the pulse width is adjusted by controlling the delay time of the programmable delay chip; the narrow pulse width signal is input to a low-side driver, and the low-side driver outputs a control signal to control a driving device to drive the laser. The high-speed pulse driving circuit can realize ultra-narrow pulse width and can conveniently adjust the pulse width.
Description
Technical Field
The utility model relates to a laser instrument especially relates to laser instrument pulse drive circuit.
Background
In the field of optical fiber communication and optical fiber sensing at present, a pulse signal is required to be used for driving a laser to generate a pulse optical signal, but most of pulse driving circuits adopt a triode or a mos tube as a driving core at present, but when a triode or a MOSFET (field effect transistor) is used as a driving element, the minimum pulse width can only be about 10ns, and the minimum pulse width cannot be smaller. Mainly due to parametric performance limitations of the devices themselves.
With the development of industry, there are some fields that the requirement for the pulse driving rate of a laser is higher, the pulse width needs to be controlled within 10ns, and the current scheme is to use a high-speed triode as a driving device, but even if the high-speed triode is adopted, the limit of the pulse width can only be about 5 ns.
Such as autonomous vehicles and driving assistance systems (ADAS), require devices that operate with narrow pulses in the nanosecond range in order to achieve the range resolution required for radar.
Distributed optical fiber sensing systems (DTS) require the use of nanosecond laser pulse signals to achieve the required high spatial resolution.
At present, most of driving circuits generate pulses with fixed width, the pulse width can be adjusted only by adjusting circuit parameters, and software adjustment cannot be realized.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the main technical problem that a novel high-speed pulse drive circuit is provided, can realize super narrow pulse width to can adjust pulse width very conveniently.
In order to solve the technical problem, the utility model provides a pulse width adjustable hypervelocity laser instrument drive circuit, include: programmable delay chip, high-speed AND gate chip;
the pulse signal output end of the singlechip is connected to a pulse signal input pin of the programmable delay chip; an output pin of the programmable delay chip is connected to a first input end of the high-speed AND gate chip; the pulse signal is connected to a second input end of the high-speed AND gate chip after passing through the fixed delay module;
the high-speed AND gate chip outputs a narrow pulse width signal, and the pulse width is adjusted by controlling the delay time of the programmable delay chip; the narrow pulse width signal is input to a low-side driver, and the low-side driver outputs a control signal to control a driving device to drive the laser.
In a preferred embodiment: the driving device is a GaN field effect transistor, the grid electrode of the driving device is connected to the control signal output end of the low-side driver, the source electrode of the driving device is grounded, the drain electrode of the driving device is connected with the cathode of the laser, and the anode of the laser is connected to the anode of the power supply.
In a preferred embodiment: and a current-limiting resistor is also connected between the anode of the laser and the anode of the power supply.
In a preferred embodiment: the fixed time delay module comprises a resistor R1 and a capacitor C1; wherein the resistor R1 is connected between the pulse signal output terminal and the second input terminal; one end of the capacitor C1 is connected to the second input terminal, and the other end is grounded.
In a preferred embodiment: the model of the programmable delay chip is DS 1124.
In a preferred embodiment: the delay time adjusting range of the DS1124 is 20ns-80ns, and the resolution is 0.25 ns.
In a preferred embodiment: the model of the high-speed AND gate chip is SN74LVC1G 08.
In a preferred embodiment: the low side driver is model LMG 1020.
In a preferred embodiment: the drive device is of the type EPC 2016C.
Compared with the prior art, the technical scheme of the utility model possess following beneficial effect:
the utility model provides a pair of pulse width adjustable hypervelocity laser instrument drive circuit uses gallium nitride (GaN) material's field effect transistor as drive device, uses LMS1020 to drive the GaN FET as low side driver, can produce the biggest 60A, minimum 1 ns's ultrafast pulse current. And the pulse width can be adjusted within 1-50ns by software programming, and the resolution is 0.25 ns. The circuit has low cost and good stability, and can be widely applied to the fields of optical fiber sensing, laser radar, laser ranging and the like.
Drawings
Fig. 1 is a circuit diagram of the preferred embodiment of the present invention.
Detailed Description
The following detailed description of the present invention will be made with reference to the accompanying drawings and examples.
The utility model provides a pulse width adjustable hypervelocity laser instrument drive circuit, include: a programmable delay chip U1 and a high-speed AND gate chip U2;
the pulse signal output end of the singlechip is connected to a pulse signal input pin of a programmable delay chip U1; an output pin of the programmable delay chip U1 is connected to a first input end of the high-speed AND gate chip; the pulse signal is connected to a second input end of the high-speed AND gate chip U2 after passing through a fixed delay module;
the high-speed AND gate chip U2 outputs a narrow pulse width signal, and the pulse width is adjusted by controlling the delay time of the programmable delay chip; the narrow pulse width signal is input to the low side driver U3, and the low side driver U3 outputs a control signal to control the driving device U4 to drive the laser.
In this embodiment, the driving device U4 is a GaN fet, and has a gate connected to the control signal output terminal of the low-side driver U3, a source grounded, a drain connected to the cathode of the laser, and an anode connected to the anode of the power supply. Specifically, the low side driver is model LMG 1020. The drive device is of the type EPC 2016C. By using a GaN FET as the driver and LMS1020 as the low-side driver to drive the GaN FET, ultrafast pulse currents of 60A maximum and 1ns minimum can be generated.
After the pulse signal passes through the fixed delay module and the programmable delay chip U1, two paths of delay signals are generated and input to the high-speed AND gate chip U2, and a narrow pulse width signal is formed after the pulse signal passes through the high-speed AND gate chip U2. And the pulse width of the narrow pulse width signal can be modified by adjusting the delay time of the programmable delay chip U1. Thus, the purpose of adjusting the pulse width by software is realized.
In this embodiment, the model of the programmable delay chip U1 is DS1124, the delay time adjustment range is 20ns-80ns, and the resolution is 0.25 ns. The model of the high-speed and gate chip U2 is SN74LVC1G 08. Therefore, the pulse width can be adjusted within 1-50ns by software programming, and the resolution is 0.25 ns. The circuit has low cost and good stability, and can be widely applied to the fields of optical fiber sensing, laser radar, laser ranging and the like.
The circuit of this embodiment also includes the following preferred designs: and a current limiting resistor R2 is also connected between the anode of the laser D1 and the anode of the power supply. The fixed time delay module comprises a resistor R1 and a capacitor C1; wherein the resistor R1 is connected between the pulse signal output terminal and the second input terminal; one end of the capacitor C1 is connected to the second input terminal, and the other end is grounded.
The above embodiments are merely illustrative, and not restrictive, of the present invention. Changes, modifications, etc. to the above-described embodiments are intended to fall within the scope of the claims of the present invention, as long as they are in accordance with the technical spirit of the present invention. .
Claims (9)
1. A pulse width tunable ultra high speed laser driver circuit, comprising: programmable delay chip, high-speed AND gate chip;
the pulse signal output end of the singlechip is connected to a pulse signal input pin of the programmable delay chip; an output pin of the programmable delay chip is connected to a first input end of the high-speed AND gate chip; the pulse signal is connected to a second input end of the high-speed AND gate chip after passing through the fixed delay module;
the high-speed AND gate chip outputs a narrow pulse width signal, and the pulse width is adjusted by controlling the delay time of the programmable delay chip; the narrow pulse width signal is input to a low-side driver, and the low-side driver outputs a control signal to control a driving device to drive the laser.
2. A pulse width tunable ultra high speed laser driving circuit according to claim 1, wherein: the driving device is a GaN field effect transistor, the grid electrode of the driving device is connected to the control signal output end of the low-side driver, the source electrode of the driving device is grounded, the drain electrode of the driving device is connected with the cathode of the laser, and the anode of the laser is connected to the anode of the power supply.
3. A pulse width tunable ultra high speed laser driving circuit according to claim 2, wherein: and a current-limiting resistor is also connected between the anode of the laser and the anode of the power supply.
4. A pulse width tunable ultra high speed laser driving circuit according to claim 1, wherein: the fixed time delay module comprises a resistor R1 and a capacitor C1; wherein the resistor R1 is connected between the pulse signal output terminal and the second input terminal; one end of the capacitor C1 is connected to the second input terminal, and the other end is grounded.
5. A pulse width tunable ultra high speed laser driving circuit according to claim 1, wherein: the model of the programmable delay chip is DS 1124.
6. The pulse width tunable ultra high speed laser driving circuit as claimed in claim 5, wherein: the delay time adjusting range of the DS1124 is 20ns-80ns, and the resolution is 0.25 ns.
7. A pulse width tunable ultra high speed laser driving circuit according to claim 1, wherein: the model of the high-speed AND gate chip is SN74LVC1G 08.
8. A pulse width tunable ultra high speed laser driving circuit according to claim 1, wherein: the low side driver is model LMG 1020.
9. A pulse width tunable ultra high speed laser driving circuit according to claim 1, wherein: the drive device is of the type EPC 2016C.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020667795.2U CN212011593U (en) | 2020-04-27 | 2020-04-27 | Ultra-high-speed laser driving circuit with adjustable pulse width |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020667795.2U CN212011593U (en) | 2020-04-27 | 2020-04-27 | Ultra-high-speed laser driving circuit with adjustable pulse width |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114678766A (en) * | 2022-03-14 | 2022-06-28 | 北京宏景智驾科技有限公司 | Method for improving laser peak power of gallium nitride drive laser circuit |
| CN114976841A (en) * | 2022-08-02 | 2022-08-30 | 杭州奥创光子技术有限公司 | Pulse driving circuit and ultrafast laser |
-
2020
- 2020-04-27 CN CN202020667795.2U patent/CN212011593U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114678766A (en) * | 2022-03-14 | 2022-06-28 | 北京宏景智驾科技有限公司 | Method for improving laser peak power of gallium nitride drive laser circuit |
| CN114976841A (en) * | 2022-08-02 | 2022-08-30 | 杭州奥创光子技术有限公司 | Pulse driving circuit and ultrafast laser |
| CN114976841B (en) * | 2022-08-02 | 2022-11-11 | 杭州奥创光子技术有限公司 | Pulse driving circuit and ultrafast laser |
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