CN212010973U - Colored Micro-LED device of flip-chip quantum dot - Google Patents
Colored Micro-LED device of flip-chip quantum dot Download PDFInfo
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- CN212010973U CN212010973U CN202021217495.0U CN202021217495U CN212010973U CN 212010973 U CN212010973 U CN 212010973U CN 202021217495 U CN202021217495 U CN 202021217495U CN 212010973 U CN212010973 U CN 212010973U
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Abstract
The utility model relates to a LED technical field that gives out light, a colored Micro-LED device of flip-chip quantum dot is related to, which comprises a base, set up blue light Micro-LED chip on the basement, set up ruddiness quantum dot film on blue light Micro-LED chip side by side, green glow quantum dot film and set up in ruddiness quantum dot film, the distributed Bragg reflector on the green glow quantum dot film, ruddiness quantum dot film, be provided with the layer of being in the light between the green glow quantum dot film, the layer of being in the light is with ruddiness quantum dot film, the light that green glow quantum dot film sent carries out the separation, thereby red glow quantum dot film, the luminous purity of green glow quantum dot film has been guaranteed.
Description
Technical Field
The utility model relates to a luminous technical field of LED, it is specific, relate to a colored Micro-LED device of flip-chip quantum dot.
Background
Micro-LED has the advantages of high resolution, fast response speed, good stability and the like, and has become a popular development direction in the display field. The Micro-LED is developed from blue passive driving display to full-color active driving display, the resolution ratio of a monochromatic Micro-LED can be 1700ppi, and the large size can be realized, compared with the monochromatic Micro-LED, the full-color Micro-LED is difficult to realize by adopting a red-green-blue chip control ratio light emitting mode, because the driving and the structure of the three-color chips are different, the manufacturing of the large-size chip is easy to generate dead spots in the integration process, and defective products are generated. At present, research on the aspect is generally to use an ultraviolet light Micro-LED array to excite red, green and blue quantum dots, or use a blue light Micro-LED array to excite red quantum dots and green quantum dots. Because the Micro-LED pixel points are usually only dozens of micrometers, light emitted from quantum dots is easy to crosstalk with each other; due to the poor stability of the blue quantum dots, the efficiency of blue light is easily reduced by adopting the ultraviolet Micro-LED to excite the red, green and blue three-color quantum dots in practical application, so that the display effect is influenced.
SUMMERY OF THE UTILITY MODEL
The utility model provides a flip-chip quantum dot colorization Micro-LED device has guaranteed the luminous purity of quantum dot and has improved display effect.
The technical scheme of the utility model as follows:
the flip quantum dot colorized Micro-LED device comprises a substrate and is characterized by further comprising a blue light Micro-LED chip arranged on the substrate, a red light quantum dot film and a green light quantum dot film which are arranged on the blue light Micro-LED chip in parallel, and distributed Bragg reflectors arranged on the red light quantum dot film and the green light quantum dot film, wherein a light blocking layer is arranged between the red light quantum dot film and the green light quantum dot film.
The blue light Micro-LED chip is a GaN-based LED chip.
The end parts of the red light quantum dot film and the green light quantum dot film are respectively of a convex structure.
The distributed Bragg reflector comprises a plane part and a convex part, wherein the plane part is respectively connected with the red light quantum dot film and the green light quantum dot film.
And a diffuse reflection layer is arranged on the inner wall of the light blocking layer.
The light blocking layer is made of photoresist, and the diffuse reflection layer is made of barium sulfate.
The utility model discloses a theory of operation and beneficial effect do:
a light blocking layer is arranged between the red light quantum dot film and the green light quantum dot film, and light emitted by the red light quantum dot film and the green light quantum dot film is blocked, so that the light emitting purity of the red light quantum dot film and the green light quantum dot film is ensured; the distributed Lag reflectors are arranged on the red light quantum dot film and the green light quantum dot film, so that incident light which penetrates through the red light quantum dot film and the green light quantum dot film can be respectively reflected to the red light quantum dot film and the green light quantum dot film, and the utilization rate of the incident light is improved; the utility model discloses an adopt blue light Micro-LED to stimulate red, green quantum dot, effectively improved blue light efficiency, and then improve the effect of demonstration.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a schematic structural view of the present invention;
in the figure: 1. the LED chip comprises a substrate, 2, a blue light Micro-LED chip, 3, a red light quantum dot film, 4, a green light quantum dot film, 5, a distributed Bragg reflector, 6, a light blocking layer, 7, a plane portion, 8, a convex portion, 9, a diffuse reflection layer, 10 and a convex structure.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive work, are related to the scope of the present invention.
In a specific embodiment, as shown in fig. 1, the flip-chip quantum dot colorized Micro-LED device comprises a substrate, and is characterized by further comprising a blue light Micro-LED chip 2 arranged on the substrate 1, a red light quantum dot film 3, a green light quantum dot film 4 and distributed bragg reflectors 5 arranged on the red light quantum dot film 3 and the green light quantum dot film 4, wherein the red light quantum dot film 3 and the green light quantum dot film 4 are arranged in parallel, and a light blocking layer 6 is arranged between the red light quantum dot film 3 and the green light quantum dot film 4.
The blue light Micro-LED chip 2 is a GaN-based blue light Micro-LED chip with an inverted structure, the blue light Micro-LED chip 2 is welded on the substrate 1 through tin, and the blue light Micro-LED chip 2 is good in heat dissipation, good in lighting effect and good in integration level.
The red light quantum dot film 3 and the green light quantum dot film 4 are prepared by respectively dissolving red quantum dot powder and green quantum dot powder in a nonpolar solvent, uniformly dispersing the dissolved red quantum dot powder and green quantum dot powder in high-temperature protective glue, pouring the solution into a convex end model to respectively obtain the red quantum dot film 3 and the green quantum dot film 4 with convex ends 10, wherein the curvature radius of the upper surface of the convex structure 10 is 70 μm, the thickness from the center of the upper surface of the convex structure 10 to the bottom of the red quantum dot film 3/green quantum dot film 4 is 65 μm, and the volume is 6125 μm3(ii) a The end part of the red light quantum dot film 3 with the end part being the convex structure 10 and the green light quantum dot film 4 can reduce total internal reflection when light passes through the end part, and can absorb more blue light energy emitted by the blue light Micro-LED chip 2, so that more exciting light is emitted.
The distributed Bragg reflector 5 comprises a plane part 7 and a convex part 8, the plane part 7 is respectively connected with the red light quantum dot film 3 and the green light quantum dot film 4, the size of the bottom surface of the plane part 7 is 25 multiplied by 25 mu m, the thickness is 2 mu m, the radius of the bottom of the convex part 8 is 25 mu m, the height is 10 mu m, the thickness is 2 mu m, the distributed Bragg reflector 5 adopts the form of combining the plane part 7 and the convex part 8, the red light/green light received by the receiving surface is obviously higher than that of the plane part 7 and the convex part 8, and the received blue light is obviously smaller than that of the plane part 7 and the convex part 8, so that the blue light transmitting through the red light quantum dot film 3 and the green light quantum dot film 4 is greatly reduced, the transmitted blue light can be reused, therefore, the light energy of the exciting light generated by the red light quantum dot film 3 and the green light quantum dot film 4 can be improved.
The diffuse reflection layer 9 is arranged on the inner wall (the side face contacted with the red light quantum dot film 3 and the green light quantum dot film 4) of the light blocking layer 6, wherein the light blocking layer 6 is made of black photoresist, the diffuse reflection layer is made of barium sulfate, and the blue light obtained at the receiving face is relatively less, so that the high pixel point luminous purity can be obtained.
The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. The utility model provides a colored Micro-LED device of flip-chip quantum dot, includes the base, its characterized in that, the device still including set up blue light Micro-LED chip (2) on base (1), set up ruddiness quantum dot film (3) on blue light Micro-LED chip (2) side by side, green glow quantum dot film (4) and set up in distributed Bragg reflector (5) on ruddiness quantum dot film (3), green glow quantum dot film (4), be provided with between ruddiness quantum dot film (3), green glow quantum dot film (4) and be in the light of layer (6).
2. The flip-chip quantum dot colorized Micro-LED device according to claim 1, wherein the blue light Micro-LED chip (2) is a GaN-based LED chip.
3. The flip-chip quantum dot colorized Micro-LED device as claimed in claim 1, wherein the ends of the red quantum dot film (3) and the green quantum dot film (4) are respectively in a convex structure (10).
4. A flip-chip quantum dot colorized Micro-LED device according to claim 1, wherein the distributed bragg reflector (5) comprises a planar portion (7) and a convex portion (8), the planar portion (7) being connected to the red quantum dot film (3) and the green quantum dot film (4), respectively.
5. A flip-chip quantum dot colorized Micro-LED device according to claim 1, characterized in that a diffuse reflective layer (9) is provided on the inner wall of the light blocking layer (6).
6. The flip-chip quantum dot colorized Micro-LED device as claimed in claim 5, wherein the light blocking layer (6) is made of photoresist, and the diffuse reflection layer is made of barium sulfate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021217495.0U CN212010973U (en) | 2020-06-28 | 2020-06-28 | Colored Micro-LED device of flip-chip quantum dot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021217495.0U CN212010973U (en) | 2020-06-28 | 2020-06-28 | Colored Micro-LED device of flip-chip quantum dot |
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| Publication Number | Publication Date |
|---|---|
| CN212010973U true CN212010973U (en) | 2020-11-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202021217495.0U Active CN212010973U (en) | 2020-06-28 | 2020-06-28 | Colored Micro-LED device of flip-chip quantum dot |
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| CN (1) | CN212010973U (en) |
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2020
- 2020-06-28 CN CN202021217495.0U patent/CN212010973U/en active Active
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