CN211942599U - Thin film thermosensitive printing head - Google Patents
Thin film thermosensitive printing head Download PDFInfo
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- CN211942599U CN211942599U CN201922409548.2U CN201922409548U CN211942599U CN 211942599 U CN211942599 U CN 211942599U CN 201922409548 U CN201922409548 U CN 201922409548U CN 211942599 U CN211942599 U CN 211942599U
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Abstract
The utility model discloses a film thermal printhead, including base plate, heat accumulation layer, resistance layer, conducting layer, protective layer, oxidation barrier, driver IC and protective layer. The heat storage layer includes a ridge portion and a base portion provided on the substrate. The resistance layer covers the outer sides of the substrate and the heat storage layer and is provided with a plurality of heating parts. The conducting layer is arranged outside the resistance layer, the conducting layer comprises a plurality of electrodes capable of forming alloy with the soldering tin, and the conducting layer is etched at the top of the raised part and exposes the heating part of the resistance layer. The protective layer is arranged outside the heating part. The oxidation-resistant layer covers the conductive layer above the second portion of the substrate. The driving IC is arranged along the length direction of the substrate and is in flip-chip interconnection with the conductive layer on the second part of the substrate. The utility model discloses an electrode that can make with the metal of soldering tin formation alloy replaces the aluminium circuit among the current thermal printhead, and drive IC adopts flip-chip bonding to replace current gold wire welding, and is with low costs, and welding speed is fast.
Description
Technical Field
The utility model relates to a temperature sensing printing device technical field, in particular to film temperature sensing beats printer head.
Background
The thermal head is a main component of a thermal printer, which selectively heats a thermal paper at a certain position, thereby generating a pattern. Heating is provided by a small electric heater on the printhead that is in contact with the heat sensitive material. The form of the heater schedule dots or bars is logically controlled by the printer and, when activated, produces a pattern on the thermal paper corresponding to the heating elements. The same logic that controls the heating elements also controls the feeding of the paper, thus enabling the printing of a pattern on the entire label or sheet.
The film technology is mainly used for ceramic base plate of aluminium oxide material, and the base plate is coated with a layer of enamel-coating layer made of glass material, then the enamel-coating layer is coated with a layer of micron-grade resistance material, and then a layer of metal electrode is plated. Aluminum is generally adopted as a material of a metal electrode in the existing film process, and because the aluminum cannot be used for soldering tin, when IC binding is carried out, a drive IC and an aluminum circuit need to be soldered through a gold wire, so that the cost is high, and the soldering speed is slow.
Disclosure of Invention
To the above problem, an object of the utility model is to provide a film thermal printer head with low costs and welding speed is fast to adopt the gold thread to connect IC and the slow technical problem of welding speed with high costs of aluminium circuit in solving the background art.
In order to realize the purpose, the utility model discloses a technical scheme as follows:
a thin film thermal printhead comprising:
a substrate divided into adjacent first and second portions.
And a heat storage layer including a ridge portion provided on the first portion of the substrate and a base portion provided on the second portion of the substrate.
And the resistance layer covers the outer sides of the substrate and the heat storage layer and is provided with a plurality of heating parts arranged at intervals along the length direction of the substrate.
The conducting layer is arranged on the outer side of the resistance layer and comprises a plurality of electrodes which are arranged at intervals along the length direction of the substrate and can form alloy with soldering tin, the conducting layer is etched at the top of the raised part and exposes the heating parts of the resistance layer, and the electrodes are in one-to-one correspondence conduction connection with the heating parts.
And the protective layer is arranged outside the heating part and completely covers the conductive layer above the first part of the substrate.
And the anti-oxidation layer covers the outer side of the conductive layer above the second part of the substrate.
And the driving IC is arranged along the length direction of the substrate and is in flip-chip interconnection with the conductive layer above the second part of the substrate.
And the protective layer is coated on the outer side of the drive IC.
In one embodiment, the conductive layer is made of one of nickel, nickel alloy, aluminum and aluminum alloy.
In another embodiment, the conductive layer is made of one of copper, tin, copper alloy, and tin alloy.
In order to increase the bonding force between the conductive layer, the resistance layer and the protective layer, a first connecting layer is arranged between the conductive layer and the resistance layer, and a second connecting layer is arranged between the protective layer and the conductive layer.
The thickness of the first connecting layer and the thickness of the second connecting layer are both 0.1 nm-20 um, and the first connecting layer and the second connecting layer are made of one of titanium, nickel, chromium, aluminum, titanium alloy, nickel alloy, chromium alloy and aluminum alloy.
Further, the thickness of the conducting layer is 0.1 nm-30 um.
Furthermore, the material of heat accumulation layer is glass glaze, and thickness is 10um ~ 500 um.
Furthermore, the resistance layer is made of tantalum compound and has a thickness of 0.1 nm-3 um.
Furthermore, the protective layer is made of wear-resistant compound and has a thickness of 5 nm-15 um.
Further, the substrate is an alumina ceramic plate, the anti-oxidation layer is a green oil layer, and the protective layer is made of epoxy resin.
The utility model discloses following beneficial effect has: the thin film thermal printing head adopts the electrode made of copper, nickel, tin or the alloy thereof which can form alloy with soldering tin to replace the aluminum circuit in the prior thermal printing head, and the driving IC adopts the mode of inverse welding to replace the prior gold wire welding, thereby greatly reducing the production cost, having high welding speed and high production efficiency.
Drawings
Fig. 1 is a plan view of a thin film thermal print head according to a first embodiment.
Fig. 2 is a schematic cross-sectional view taken along the direction I-I in fig. 1.
Fig. 3 is a partially enlarged schematic view of a portion a in fig. 2.
Fig. 4 is a partially enlarged view of a portion B in fig. 2.
Fig. 5 is a partially enlarged schematic view of a portion C in fig. 2.
Fig. 6 is a schematic cross-sectional view of a thin film thermal print head according to a second embodiment.
Fig. 7 is a partially enlarged view of portion D of fig. 6.
Fig. 8 is a partially enlarged schematic view of a portion E in fig. 6.
Fig. 9 is a partially enlarged schematic view of portion F of fig. 6.
Description of the main component symbols: 1. a substrate; 11. a first portion; 12. a second portion; 21. a raised portion; 22. a base portion; 3. a resistive layer; 31. a heat generating portion; 4. a conductive layer; 41. an electrode; 5. a protective layer; 6. an oxidation-resistant layer; 7. a driver IC; 8. a protective layer; 91. a first tie layer; 92. a second connection layer; in the X direction: the length direction of the substrate; y direction: the width direction of the substrate.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the following detailed description.
Example one
As shown in fig. 1 to 5, a thin film thermal head includes a substrate 1, a heat storage layer, a resistance layer 3, a conductive layer 4, a protective layer 5, an oxidation prevention layer 6, a driver IC 7, and a protective layer 8, and the substrate 1 is an alumina ceramic plate.
The substrate 1 is divided into a first portion 11 and a second portion 12 adjacent to each other, and the longitudinal direction of the substrate 1 is the X direction in the figure and the width direction is the Y direction in the figure. The heat accumulation layer comprises a bulge part 21 arranged on the first part 11 of the substrate 1 and a base part 22 arranged on the second part 12 of the substrate 1, and the heat accumulation layer is made of glass glaze and has the thickness of 10-500 um.
The resistance layer 3 covers the outer sides of the substrate 1 and the heat storage layer, the resistance layer 3 has a plurality of heating portions 31 arranged at intervals along the length direction of the substrate 1, and the resistance layer 3 is made of a tantalum compound and has a thickness of 0.1nm to 3 um. The conductive layer 4 is disposed outside the resistive layer 3, the conductive layer 4 includes a plurality of electrodes 41 disposed at intervals along the length direction of the substrate 1 and capable of forming an alloy with solder, the conductive layer 4 is etched at the top of the raised portion 21 to expose the heating portion 31 of the resistive layer 3, and the electrodes 41 are in one-to-one correspondence conductive connection with the heating portion 31. The conducting layer 4 is made of one of nickel, nickel alloy, aluminum and aluminum alloy, and the thickness is 0.1 nm-30 um.
The protective layer 5 is disposed outside the heating portion 31 and completely covers the conductive layer 4 above the first portion 11 of the substrate 1, and the material of the protective layer 5 is a silicon-based compound with a thickness of 5nm to 15 um. The oxidation preventing layer 6 covers the outside of the conductive layer 4 above the second portion 12 of the substrate 1, and the oxidation preventing layer 6 is a green oil layer. The driver ICs 7 are routed along the length of the substrate 1 and are flip-chip interconnected to the conductive layer 4 over the second portion 12 of the substrate 1. The protective layer 8 covers the outer side of the driving IC 7, and the protective layer 8 is made of epoxy resin.
The manufacturing method of the film thermal printing head comprises the following steps:
in the first step, a glass glaze is coated on the surface of the first part 11 of the alumina ceramic plate and is sintered at 110 ℃ for 2 hours to form a ridge 21 having a thickness of a gloss glaze layer of 10um to 500um, and a glass glaze is coated on the surface of the second part 12 of the alumina ceramic plate and is sintered at 110 ℃ for 2 hours to form a base part 22 having a thickness of a gloss glaze layer of 10um to 500 um.
And secondly, plating a layer of tantalum compound on the alumina ceramic plate and the glass glaze by adopting a PVD (physical vapor deposition) process at 300 ℃ under the pressure of 0.1 Pa to serve as a heating resistor.
Thirdly, plating a nickel or nickel alloy layer with the thickness of 0.1 nm-30 um as a conducting layer 4 at 300 ℃ under the pressure of 0.1 Pa on the outer side of the heating resistor by adopting a PVD process, etching the conducting layer 4 by using a dry method or a wet method to obtain a plurality of electrodes 41 distributed at intervals along the length direction of the substrate 1, etching the electrodes 41 at the top of the bulge part 21 and exposing the heating part 31 of the resistance layer 3.
And fourthly, plating a layer of silicon-based compound with the thickness of 5 nm-15 um on the conductive layer 4 above the first part 11 of the alumina ceramic plate and the outer side of the heating part 31 by adopting a PVD process at the temperature of 100 ℃ under the air pressure of 0.1 Pa.
And fifthly, coating a layer of green oil on the outer side of the conductive layer 4 above the second part 12 of the alumina ceramic plate and reserving a welding station of the drive IC 7, and inversely welding a drive IC 7 arranged along the length direction of the alumina ceramic plate at the welding station and encapsulating epoxy resin.
In this embodiment, one of nickel, nickel alloy, aluminum, and aluminum alloy is used as the material of the conductive layer 4, and since the conductive layer can be easily combined with the resistive layer and the protective layer, the bonding force does not need to be strengthened by the via layer.
Example two
As shown in fig. 6 to 9, the present embodiment is different from the first embodiment only in that: the material of the conductive layer 4 is one of copper, tin, copper alloy and tin alloy. A first connection layer 91 is provided between the conductive layer 4 and the resistive layer 3 and a second connection layer 92 is provided between the protective layer 5 and the conductive layer 4. The first connection layer 91 and the second connection layer 92 are made of one of titanium, nickel, chromium, aluminum, titanium alloy, nickel alloy, chromium alloy, and aluminum alloy. The thickness of the first connection layer 91 and the second connection layer 92 is 0.1 nm-20 um. The rest of the structure of the present embodiment is the same as that of the first embodiment.
The method for manufacturing the thin film thermal printing head comprises the following steps:
in the first step, a glass glaze is coated on the surface of the first part 11 of the alumina ceramic plate and is sintered at 110 ℃ for 2 hours to form a ridge 21 having a thickness of a gloss glaze layer of 10um to 500um, and a glass glaze is coated on the surface of the second part 12 of the alumina ceramic plate and is sintered at 110 ℃ for 2 hours to form a base part 22 having a thickness of a gloss glaze layer of 10um to 500 um.
And secondly, plating a layer of tantalum compound on the alumina ceramic plate and the glass glaze by adopting a PVD (physical vapor deposition) process at 300 ℃ under the pressure of 0.1 Pa to serve as a heating resistor.
And thirdly, plating a first connecting layer 91 with the thickness of 0.1 nm-20 um on the outer side of the heating resistor by adopting a PVD (physical vapor deposition) process at the temperature of 300 ℃ under the pressure of 0.1 Pa.
And fourthly, plating a nickel or nickel alloy layer with the thickness of 0.1 nm-30 um as the conducting layer 4 on the outer side of the first connecting layer 91 by adopting a PVD (physical vapor deposition) process at 300 ℃ under the pressure of 0.1 Pa, etching the conducting layer 4 and the first connecting layer 91 by using a dry method or a wet method respectively to obtain a plurality of electrodes 41 distributed at intervals along the length direction of the substrate 1, etching the conducting layer 4 and the first connecting layer 91 at the top position of the bulge part 21 respectively and exposing the heating part 31 of the resistor layer 3.
And fifthly, plating a second connecting layer 92 with the thickness of 0.1 nm-20 um on the outer side of the conductive layer 4 by adopting a PVD (physical vapor deposition) process at 300 ℃ under the pressure of 0.1 Pa, wherein the second connecting layer 92 completely covers the first part 11 of the substrate 1 but only covers a small part of the second part 12 of the substrate 1.
And sixthly, plating a layer of silicon-based compound with the thickness of 5 nm-15 um on the outer side of the second connecting layer 92 by adopting a PVD (physical vapor deposition) process at the temperature of 100 ℃ under the air pressure of 0.1 Pa.
And seventhly, coating a green oil layer on the outer side of the second connecting layer 92 above the second part 12 of the alumina ceramic plate and reserving a welding station of the drive IC 7, and inversely welding a drive IC 7 arranged along the length direction of the alumina ceramic plate at the welding station and packaging epoxy resin.
In this embodiment, one of copper, tin, copper alloy and tin alloy is used as the material of the conductive layer 4, and since the bonding force between the material and the resistive layer 3 or the protective layer 5 is not strong, the first connection layer 91 and the second connection layer 92 are added to strengthen the metal bonding force of the conductive layer 4.
While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A thin film thermal printhead, comprising:
a substrate divided into adjacent first and second portions;
a heat storage layer including a ridge portion provided on the first portion of the substrate and a base portion provided on the second portion of the substrate;
the resistance layer covers the outer sides of the substrate and the heat storage layer and is provided with a plurality of heating parts arranged at intervals along the length direction of the substrate;
the conducting layer is arranged outside the resistance layer and comprises a plurality of electrodes which are arranged at intervals along the length direction of the substrate and can form alloy with soldering tin, the conducting layer is etched at the top of the raised part and exposes the heating parts of the resistance layer, and the electrodes are in one-to-one correspondence conduction connection with the heating parts;
a protective layer arranged outside the heating part and completely covering the conductive layer above the first part of the substrate;
the anti-oxidation layer covers the outer side of the conductive layer above the second part of the substrate;
the driving IC is arranged along the length direction of the substrate and is in reverse welding interconnection with the conductive layer above the second part of the substrate;
and the protective layer is coated on the outer side of the drive IC.
2. The thin film thermal printhead of claim 1, wherein: the conducting layer is made of one of nickel, nickel alloy, aluminum and aluminum alloy.
3. The thin film thermal printhead of claim 1, wherein: the conducting layer is made of one of copper, tin, copper alloy and tin alloy.
4. The thin film thermal printhead of claim 1, wherein: a first connecting layer is arranged between the conducting layer and the resistance layer, and a second connecting layer is arranged between the protection layer and the conducting layer.
5. The thin film thermal printhead of claim 4, wherein: the thickness of the first connecting layer and the second connecting layer is 0.1 nm-20 um, and the first connecting layer and the second connecting layer are made of one of titanium, nickel, chromium, aluminum, titanium alloy, nickel alloy, chromium alloy and aluminum alloy.
6. The thin film thermal printhead as claimed in any one of claims 3 to 5, wherein: the thickness of the conducting layer is 0.1 nm-30 um.
7. The thin film thermal printhead of claim 1, wherein: the material of heat accumulation layer is glass glaze, and thickness is 10um ~ 500 um.
8. The thin film thermal printhead of claim 1, wherein: the resistance layer is made of tantalum compounds and has a thickness of 0.1 nm-3 um.
9. The thin film thermal printhead of claim 1, wherein: the protective layer is made of wear-resistant compound and has the thickness of 5 nm-15 um.
10. The thin film thermal printhead of claim 1, wherein: the base plate is an alumina ceramic plate, the anti-oxidation layer is a green oil layer, and the protective layer is made of epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922409548.2U CN211942599U (en) | 2019-12-28 | 2019-12-28 | Thin film thermosensitive printing head |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922409548.2U CN211942599U (en) | 2019-12-28 | 2019-12-28 | Thin film thermosensitive printing head |
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| CN211942599U true CN211942599U (en) | 2020-11-17 |
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| CN201922409548.2U Active CN211942599U (en) | 2019-12-28 | 2019-12-28 | Thin film thermosensitive printing head |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110884261A (en) * | 2019-12-28 | 2020-03-17 | 厦门芯瓷科技有限公司 | Thin film thermal sensitive printing head and manufacturing method thereof |
| CN112659758A (en) * | 2021-01-13 | 2021-04-16 | 沈阳晖印电子科技有限公司 | Thermal printing head with multilayer overlapping structure |
-
2019
- 2019-12-28 CN CN201922409548.2U patent/CN211942599U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110884261A (en) * | 2019-12-28 | 2020-03-17 | 厦门芯瓷科技有限公司 | Thin film thermal sensitive printing head and manufacturing method thereof |
| CN112659758A (en) * | 2021-01-13 | 2021-04-16 | 沈阳晖印电子科技有限公司 | Thermal printing head with multilayer overlapping structure |
| CN112659758B (en) * | 2021-01-13 | 2023-11-17 | 广州晖印科技有限公司 | Thermal printing head with multilayer overlapped structure |
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