CN211897167U - Device for increasing crystallization speed of silicon core - Google Patents
Device for increasing crystallization speed of silicon core Download PDFInfo
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- CN211897167U CN211897167U CN202022040176.3U CN202022040176U CN211897167U CN 211897167 U CN211897167 U CN 211897167U CN 202022040176 U CN202022040176 U CN 202022040176U CN 211897167 U CN211897167 U CN 211897167U
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Abstract
The utility model discloses an improve device of silicon core crystallization speed in the silicon core preparation technical field, including gas conveying ring, first play gas board and second play gas board etc, cold source inert gas enters into first outlet duct and third outlet duct along gas conveying ring, and discharge along first play gas board and second play gas board, the relative arc that first play gas board and second play gas board are mutual symmetry in position, first play gas board and second play gas board that the position is relative are located silicon core week side, first play gas board and second play gas board are the cavity structure, evenly seted up the venthole on the relative lateral wall of relative first play gas board of position and second play gas board respectively, because first play gas board and second play gas board encircle the silicon core, therefore it is more even, do benefit to the even cooling silicon core, improve the silicon core crystallization speed.
Description
Technical Field
The utility model relates to a silicon core preparation technical field, concrete field is a device for improving silicon core crystallization rate.
Background
The polysilicon industry is strategic industry, the polysilicon material supports the semiconductor material industry, the semiconductor material industry is directly related to the development speed of the microelectronic industry, the power electronic industry and the photovoltaic industry, the preparation process of the silicon core mainly comprises a zone melting method and a cutting method, wherein the zone melting method is widely used, a deposition rod with a certain diameter is prepared by using a reduction furnace as a raw material rod, then the raw material rod is drawn into a circular silicon core with a certain diameter and length through the zone melting process, a seed crystal is clamped by a seed crystal chuck in the drawing process of the silicon core, after a high-frequency coil melts an upper end head of the raw material rod, the seed crystal chuck drives the seed crystal to descend until the seed crystal penetrates through a drawing hole of the high-frequency coil and is inserted into a solution at the upper end of the raw material rod, then the seed crystal is driven to ascend by the seed crystal chuck, the seed crystal drives the solution to recrystallize, and, at present, when a silicon core is drawn by technicians in the field, when a seed crystal lifts with a molten liquid, the molten liquid is naturally cooled and recrystallized after leaving a drawing hole of a high-frequency coil, the crystallization speed is slow, the existing technical means for solving the problem of slow crystallization speed is to accelerate the crystallization of the silicon core by blowing a cold source inert gas to the silicon core, but the existing blowing structure is a common gas pipe, and the silicon core is not uniformly cooled due to the uneven condition of blowing the silicon core, so the device for improving the crystallization speed of the silicon core is provided.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an improve silicon core crystallization rate's device to solve the problem of mentioning in the background art.
In order to achieve the above object, the utility model provides a following technical scheme: a device for improving the crystallization speed of a silicon core comprises a gas delivery ring, wherein a gas inlet pipe is communicated with the side wall of the gas delivery ring, the lower end of the gas conveying ring is uniformly communicated with a first gas outlet pipe along the annular shape, the center of the gas conveying ring is communicated with one end of a second gas outlet pipe through a connecting pipe, the other end of the second air outlet pipe is communicated and provided with a third air outlet pipe along the annular equidistance, the air outlet ends of the first air outlet pipe and the third air outlet pipe are respectively communicated and provided with a first air outlet plate and a second air outlet plate which are matched with each other for use, the first air outlet plate and the second air outlet plate which are opposite in position are arc-shaped plates which are symmetrical with each other, the first air outlet plate and the second air outlet plate which are opposite in position are positioned on the periphery side of the silicon core, the first air outlet plate and the second air outlet plate are both of a cavity structure, and air outlet holes are uniformly formed in the opposite side walls of the first air outlet plate and the second air outlet plate, wherein the opposite side walls of the first air outlet plate and the second air outlet plate are opposite in position.
Preferably, the side walls of the first air outlet plate and the second air outlet plate are both provided with a connecting joint.
Preferably, the lower side of the gas conveying ring is provided with a gas recovery assembly for recovering the inert gas of the cold source.
Preferably, the gas recovery subassembly includes the bottom cavity, the week side intercommunication of bottom cavity is provided with week side cavity, the bottom cavity with receipts gas pocket has evenly been seted up respectively on the inside wall of week side cavity, the lower extreme intercommunication of bottom cavity sets up the one end of receiving trachea, the other end of receiving trachea is connected with the inlet end of fan.
Preferably, the air outlet end of the fan is connected with the air collection box, the air inlet end of the air collection box is provided with a one-way valve, and the air collection box is provided with a pressure gauge.
Preferably, the horizontal plane of the upper end of the cavity on the peripheral side is higher than the horizontal planes of the upper ends of the first air outlet plate and the second air outlet plate.
Compared with the prior art, the beneficial effects of the utility model are that: a device for improving the crystallization speed of a silicon core is characterized in that an air inlet pipe is connected with an air source, the lower end of an air conveying ring is uniformly communicated and provided with a first air outlet pipe along the annular shape, the center of the air conveying ring is communicated and provided with one end of a second air outlet pipe through a connecting pipe, the other end of the second air outlet pipe is communicated and provided with a third air outlet pipe along the annular shape at equal intervals, the air outlet ends of the first air outlet pipe and the third air outlet pipe are respectively communicated and provided with a first air outlet plate and a second air outlet plate which are matched with each other, cold source inert gas enters the first air outlet pipe and the third air outlet pipe along the air conveying ring and is discharged along the first air outlet plate and the second air outlet plate, the first air outlet plate and the second air outlet plate which are opposite in position are mutually symmetrical arc plates, the first air outlet plate and the second air outlet plate which are opposite in position are positioned on the periphery of the silicon core, the first air outlet plate and the second air outlet plate which are opposite in position are both in a cavity, because the first air outlet plate and the second air outlet plate surround the silicon core, air is more uniformly discharged, uniform cooling of the silicon core is facilitated, and the crystallization speed of the silicon core is increased.
Drawings
FIG. 1 is a sectional view of the main structure of the present invention;
fig. 2 is a top view of the first air outlet plate and the second air outlet plate of the present invention;
fig. 3 is a side view of a first outlet plate of the present invention;
fig. 4 is a bottom view of the gas delivery ring, the first outlet tube, the connecting tube and the second outlet tube of the present invention;
fig. 5 is a top view of the gas recovery assembly of the present invention.
In the figure: 1-a gas conveying ring, 2-a gas inlet pipe, 3-a first gas outlet pipe, 4-a connecting pipe, 5-a second gas outlet pipe, 6-a first gas outlet plate, 7-a second gas outlet plate, 8-a gas outlet hole, 9-a connecting joint, 10-a gas recovery component, 101-a bottom cavity, 102-a peripheral cavity, 103-a gas collecting hole, 104-a gas collecting pipe, 105-a fan, 11-a third gas outlet pipe and 12-a gas collecting box.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The description of the directions (up, down, left, right, front, and back) is made with reference to the structure shown in fig. 1 of the drawings attached to the specification, but the practical direction of the present invention is not limited thereto.
Example (b):
referring to fig. 1-5, the present invention provides a technical solution: referring to fig. 1, a device for increasing the crystallization speed of silicon core comprises a gas delivery ring 1, a gas inlet pipe 2 is communicated with the side wall of the gas delivery ring 1, the gas inlet pipe 2 is connected with a gas source, a first gas outlet pipe 3 is uniformly communicated with the lower end of the gas delivery ring 1 along the annular shape, referring to fig. 4, the center of the gas delivery ring 1 is communicated with one end of a second gas outlet pipe 5 through a connecting pipe 4, the other end of the second gas outlet pipe 5 is communicated with a third gas outlet pipe 11 along the annular shape at equal distance, the gas outlet ends of the first gas outlet pipe 3 and the third gas outlet pipe 11 are respectively communicated with a first gas outlet plate 6 and a second gas outlet plate 7 which are used in cooperation with each other, cold source inert gas enters the first gas outlet pipe 3 and the third gas outlet pipe 11 along the gas delivery ring 1 and is discharged along the first gas outlet plate 6 and the second gas outlet plate 7, the first gas outlet plate 6 and the second gas outlet plate 7 which are opposite in position are arc-shaped plates which are symmetrical to each other, the first gas outlet plate 6 and the second gas outlet plate 7 which are opposite in position are located on the periphery side of the silicon core, the first gas outlet plate 6 and the second gas outlet plate 7 are both in cavity structures, please refer to fig. 3, gas outlet holes 8 are respectively and uniformly formed in the opposite side walls of the first gas outlet plate 6 and the second gas outlet plate 7 which are opposite in position, please refer to fig. 2, and as the first gas outlet plate 6 and the second gas outlet plate 7 surround the silicon core, gas is more uniformly discharged, the silicon core is favorably and uniformly cooled, and the crystallization speed of the silicon core is improved.
Referring to fig. 2, specifically, the side walls of the first air outlet plate 6 and the second air outlet plate 7 are both provided with a connection joint 9. The connection joint 9 is conveniently connected with the air outlet ends of the first air outlet pipe 3 and the third air outlet pipe 11.
Referring to fig. 1, in detail, a gas recycling assembly 10 for recycling the inert gas of the heat sink is disposed at the lower side of the gas conveying ring 1. The gas recovery assembly 10 is used for recovering the inert gas of the cold source, and when the inert gas of the cold source is released in a large amount, although the inert gas is non-toxic, under the condition of poor ventilation environment, the inert gas can affect the local oxygen concentration, so that the oxygen deficiency of workers is caused.
Referring to fig. 1 and 5, specifically, the gas recovery assembly 10 includes a bottom cavity 101, a peripheral cavity 102 is disposed around the bottom cavity 101, air receiving holes 103 are uniformly disposed on inner sidewalls of the bottom cavity 101 and the peripheral cavity 102, a lower end of the bottom cavity 101 is communicated with one end of an air receiving pipe 104, and the other end of the air receiving pipe 104 is connected to an air inlet end of a fan 105. The bottom cavity 101 and the peripheral cavity 102 generate negative pressure through the work of the fan 105, the released cold source inert gas enters the bottom cavity 101 and the peripheral cavity 102 from the air receiving hole 103, the air suction strength of the fan 105 is low, and the cooling of the cold source inert gas on the silicon core is not influenced.
Referring to fig. 1, specifically, an air outlet end of the fan 105 is connected to the air collecting box 12, an air inlet end of the air collecting box 12 is provided with a one-way valve, and the air collecting box 12 is provided with a pressure gauge. The gas collection box 12 is arranged to collect cold source inert gas.
Referring to fig. 1, specifically, the horizontal plane of the upper end of the peripheral cavity 102 is higher than the horizontal planes of the upper ends of the first air outlet plate 6 and the second air outlet plate 7. The comprehensive recovery of the cold source inert gas is facilitated.
The working principle is as follows: the air inlet pipe 2 is connected with an air source, the lower end of the air conveying ring 1 is uniformly communicated and provided with a first air outlet pipe 3 along an annular shape, the center of the air conveying ring 1 is communicated and provided with one end of a second air outlet pipe 5 through a connecting pipe 4, the other end of the second air outlet pipe 5 is communicated and provided with a third air outlet pipe 11 along an annular shape at equal intervals, the air outlet ends of the first air outlet pipe 3 and the third air outlet pipe 11 are respectively communicated and provided with a first air outlet plate 6 and a second air outlet plate 7 which are matched with each other for use, cold source inert gas enters the first air outlet pipe 3 and the third air outlet pipe 11 along the air conveying ring 1 and is discharged along the first air outlet plate 6 and the second air outlet plate 7, the first air outlet plate 6 and the second air outlet plate 7 which are opposite in position are arc-shaped plates which are symmetrical to each other, the first air outlet plate 6 and the second air outlet plate 7 which are opposite in position are positioned on the periphery of a silicon core, the air outlet holes 8 are respectively and uniformly formed in the opposite side walls of the first air outlet plate 6 and the second air outlet plate 7 which are opposite in position, and the first air outlet plate 6 and the second air outlet plate 7 surround the silicon core, so that air is more uniformly discharged, the silicon core is favorably and uniformly cooled, and the crystallization speed of the silicon core is improved.
In the description of the present invention, unless expressly stated or limited otherwise, the terms "disposed," "mounted," "connected," and "fixed" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The utility model discloses the standard parts that use all can purchase from the market, and dysmorphism piece all can be customized according to the record of description and attached drawing.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides an improve silicon core crystallization rate's device, includes gas delivery ring (1), the intercommunication is provided with intake pipe (2), its characterized in that on the lateral wall of gas delivery ring (1): the lower end of the gas conveying ring (1) is uniformly communicated with a first gas outlet pipe (3) along an annular shape, the center of the gas conveying ring (1) is communicated with one end of a second gas outlet pipe (5) through a connecting pipe (4), the other end of the second gas outlet pipe (5) is communicated with a third gas outlet pipe (11) along an annular equal distance, the gas outlet ends of the first gas outlet pipe (3) and the third gas outlet pipe (11) are respectively communicated with a first gas outlet plate (6) and a second gas outlet plate (7) which are matched with each other, the first gas outlet plate (6) and the second gas outlet plate (7) which are opposite in position are symmetrical arc-shaped plates, the first gas outlet plate (6) and the second gas outlet plate (7) which are opposite in position are positioned on the periphery side of a silicon core, and the first gas outlet plate (6) and the second gas outlet plate (7) are both in a cavity structure, and air outlet holes (8) are respectively and uniformly formed in the opposite side walls of the first air outlet plate (6) and the second air outlet plate (7) which are opposite in position.
2. The device for increasing the crystallization speed of the silicon core according to claim 1, wherein: and the side walls of the first air outlet plate (6) and the second air outlet plate (7) are provided with connecting joints (9).
3. The device for increasing the crystallization speed of the silicon core according to claim 1, wherein: and a gas recovery assembly (10) for recovering cold source inert gas is arranged on the lower side of the gas conveying ring (1).
4. The device for increasing the crystallization speed of the silicon core according to claim 3, wherein: gas recovery subassembly (10) are including bottom cavity (101), the week side intercommunication of bottom cavity (101) is provided with week side cavity (102), bottom cavity (101) with receipts gas pocket (103) have evenly been seted up on the inside wall of week side cavity (102) respectively, the lower extreme intercommunication of bottom cavity (101) sets up the one end of receiving trachea (104), the other end of receiving trachea (104) is connected with the inlet end of fan (105).
5. The device for increasing the crystallization speed of the silicon core according to claim 4, wherein: the air outlet end of the fan (105) is connected with the air collection box (12), the air inlet end of the air collection box (12) is provided with a one-way valve, and the air collection box (12) is provided with a pressure gauge.
6. The device for increasing the crystallization speed of the silicon core according to claim 4, wherein: the horizontal plane of the upper end of the peripheral cavity (102) is higher than the horizontal planes of the upper ends of the first air outlet plate (6) and the second air outlet plate (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022040176.3U CN211897167U (en) | 2020-09-17 | 2020-09-17 | Device for increasing crystallization speed of silicon core |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022040176.3U CN211897167U (en) | 2020-09-17 | 2020-09-17 | Device for increasing crystallization speed of silicon core |
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| CN211897167U true CN211897167U (en) | 2020-11-10 |
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| CN202022040176.3U Active CN211897167U (en) | 2020-09-17 | 2020-09-17 | Device for increasing crystallization speed of silicon core |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113481589A (en) * | 2021-07-08 | 2021-10-08 | 牛伟 | Cooling device for simultaneously drawing multiple silicon cores by using crushed silicon materials |
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2020
- 2020-09-17 CN CN202022040176.3U patent/CN211897167U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113481589A (en) * | 2021-07-08 | 2021-10-08 | 牛伟 | Cooling device for simultaneously drawing multiple silicon cores by using crushed silicon materials |
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