CN211872084U - Chemical vapor deposition device - Google Patents
Chemical vapor deposition device Download PDFInfo
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- CN211872084U CN211872084U CN201922237894.7U CN201922237894U CN211872084U CN 211872084 U CN211872084 U CN 211872084U CN 201922237894 U CN201922237894 U CN 201922237894U CN 211872084 U CN211872084 U CN 211872084U
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- vapor deposition
- chemical vapor
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- placing plate
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Abstract
The utility model discloses a chemical vapor deposition device, include: the device comprises a shell, a first cavity and a second cavity, wherein a deposition cavity is arranged in the shell; the material placing plate is arranged in the deposition cavity and used for placing a substrate needing vapor deposition; the induction coil is arranged in the deposition cavity and below the material placing plate, and the induction coil is used for generating an induction magnetic field. The utility model discloses a chemical vapor deposition device has designed a chemical vapor deposition device according to the principle of many first coupling field deposition methods, the chemical vapor deposition of mainly used platelike piece, and induction coil produces the induction magnetic field that changes under the effect of electric current through putting the flitch, makes and puts the flitch and produce induced-current and generate heat, and the heat transfer forms the required temperature of deposit for the substrate. Because the substrate is in the induction magnetic field, the induction magnetic field attracts particles such as free radicals generated by hydrocarbon cracking to move towards the substrate, the collision probability of the particles such as the free radicals and the like with the deposition surface is increased, and the deposition rate is greatly improved.
Description
Technical Field
The utility model relates to a chemical vapor deposition technical field, in particular to chemical vapor deposition device.
Background
The chemical vapor deposition method is a common method for producing composite materials such as carbon, silicon carbide and the like, the carbon-carbon composite materials and the carbon-ceramic composite materials are applied to the field of aerospace due to a series of excellent properties such as high strength, high use temperature and the like, the chemical vapor deposition method is one of main methods for preparing the composite materials, the composite materials prepared by the chemical vapor deposition method have a series of advantages such as high purity, good mechanical properties and the like, but the biggest problem at present is long forming period and high cost.
SUMMERY OF THE UTILITY MODEL
Objects of the invention
The utility model aims to provide a chemical vapor deposition device to solve the problems.
(II) technical scheme
In order to solve the above problem, a first aspect of the present invention provides a chemical vapor deposition apparatus, including: the device comprises a shell, a first air inlet, a second air inlet, a first air outlet and a second air outlet, wherein a deposition cavity is arranged in the shell; the material placing plate is arranged in the deposition cavity and used for placing a substrate needing vapor deposition; the induction coil is arranged in the deposition cavity and located below the material placing plate, and the induction coil is used for generating an induction magnetic field.
Further, the material placing plate is provided with a gaseous substance passing hole for increasing the contact area of the substrate and the gaseous substance.
Furthermore, the gas-phase substance passing holes are multiple and are through holes formed in the axial direction of the material placing plate.
Further, the gas-phase substances are uniformly distributed on the material placing plate through the holes.
Further, the plane of the material placing plate is parallel to and concentric with the plane of the induction coil.
Further, the induction coil is connected with an alternating current power supply, and the frequency range of the alternating current power supply is as follows: 10-50HZ。
Further, the air inlet is arranged on the top surface of the shell; the exhaust port is disposed at a bottom surface of the housing.
Furthermore, a heat insulation layer is arranged inside the shell, the heat insulation layer surrounds and forms a heat insulation cavity, and the material placing plate is arranged inside the heat insulation cavity; the air inlet enables the interior of the heat insulation layer to be communicated with the exterior of the shell, and the air outlet enables the interior of the heat insulation layer to be communicated with the exterior of the shell.
Further, the induction coil is arranged outside the heat preservation cavity.
Furthermore, the shell is internally provided with a water-cooling interlayer, and the water-cooling interlayer is provided with a water inlet and a water outlet.
(III) advantageous effects
The above technical scheme of the utility model has following profitable technological effect:
the utility model discloses a chemical vapor deposition device has designed a chemical vapor deposition device according to the principle of many first coupling field deposition methods, the chemical vapor deposition of mainly used platelike piece, and induction coil produces the induction magnetic field that changes under the effect of electric current through putting the flitch, makes and puts the flitch and produce induced-current and generate heat, and the heat transfer forms the required temperature of deposit for the substrate. Because the substrate is in the induction magnetic field, the induction magnetic field attracts particles such as free radicals generated by hydrocarbon cracking to move towards the substrate, the collision probability of the particles such as the free radicals and the like with the deposition surface is increased, and the deposition rate is greatly improved.
Drawings
Fig. 1 is a schematic structural view of a chemical vapor deposition apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a material placing plate according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of an induction coil according to an embodiment of the present invention.
Reference numerals:
1: a housing; 11: a deposition chamber; 12: an air inlet; 13: an exhaust port; 14: a water-cooling interlayer; 141: a water inlet; 142: a water outlet; 15: a heat-insulating layer; 151: a heat preservation cavity; 2: placing a material plate; 21: the gas phase substance passes through the hole; 3: a substrate; 4: an induction coil; 5: an alternating current power supply.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings. It should be understood that the description is intended to be illustrative only and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
A schematic diagram of a layer structure according to an embodiment of the invention is shown in the drawing. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
It is to be understood that the embodiments described are only some of the embodiments of the present invention, and not all of them. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Furthermore, the technical features mentioned in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other.
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale.
Fig. 1 is a schematic structural view of a chemical vapor deposition apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a material placing plate according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of an induction coil according to an embodiment of the present invention.
In one embodiment according to an embodiment of the present invention, as shown in fig. 1, 2 and 3, there is provided a chemical vapor deposition apparatus including: casing 1 is provided with deposit chamber 11 in the casing 1, and casing 1 is provided with air inlet 12 and gas vent 13 and puts flitch 2, puts flitch 2 setting in deposit chamber 11 for place the substrate 3 that needs vapor deposition, and induction coil 4, induction coil 4 set up in deposit chamber 11 inside and be located and put flitch 2 below, and induction coil 4 is used for producing induction field. The utility model discloses a chemical vapor deposition device has designed a chemical vapor deposition device according to the principle of many first coupling field deposition methods, the chemical vapor deposition of mainly used platelike piece, and induction coil 4 produces the induction magnetic field that changes under the effect of electric current through putting flitch 2, makes to put flitch 2 and produces induced-current and generate heat, and heat transfer forms the required temperature of deposit for substrate 3. Because the substrate 3 is in the induction magnetic field, the induction magnetic field attracts particles such as free radicals generated by hydrocarbon cracking to move towards the substrate 3, the collision probability of the particles such as the free radicals and the like with the deposition surface is increased, and the deposition rate is greatly improved.
The organic coupling of multiple physical fields such as a temperature field, a concentration field, an induction magnetic field and the like is an effective way for rapid densification, and the substrate 3 is positioned in the multiple coupling fields through design, so that the purpose of rapid deposition densification is achieved.
In an alternative embodiment, the induction coil 4 is in the form of a spiral, and the central connection and the outer connections are connected to an ac power supply 5.
In an alternative embodiment, the charge plate 2 is provided with the gaseous substance passing holes 21, and the gaseous substance passing holes 21 are used to increase the contact area of the substrate 3 with the gaseous substance.
In an alternative embodiment, the gaseous substance passing holes 21 are plural, and the plural gaseous substance passing holes 21 are through holes opened in the axial direction of the material placing plate 2. The material placing plate 2 adopts a porous structure, so that gas-phase substances at the initial stage of deposition can pass through the substrate 3 in all directions, and the deposition rate is accelerated.
In an alternative embodiment, the gaseous substances are distributed evenly over the loading plate 2 through the holes 21. The contact area of the substrate 3 and the gas phase substance is greatly increased, so that the deposition of the substrate 3 is more uniform.
In an alternative embodiment, the plane of the loading plate 2 is parallel to and concentric with the plane of the induction coil 4.
In an alternative embodiment, the induction coil 4 is connected to an ac power source 5, and the frequency range of the ac power source 5 is: 10-50HZ。
In an optional embodiment, the alternating current power supply 5 is a medium frequency power supply, medium frequency current passes through a disc type induction coil 4 installed at the bottom of the heat insulation layer 15, the induction coil 4 generates a changing induction magnetic field under the action of the medium frequency current and passes through the porous material placing plate 2, so that the material placing plate 2 generates induction current to generate heat, and heat is transferred to the substrate 3 to form temperature required by deposition.
In an alternative embodiment, the air inlet 12 is provided on the top surface of the housing 1 and the air outlet 13 is provided on the bottom surface of the housing 1. In the deposition process, the heat of the substrate 3 comes from induction heating generated by the porous material placing plate 2, and the substrate 3 is preferentially deposited on one side close to the material placing plate 2, so that the process gas of the equipment adopts upper gas inlet and lower gas outlet, so that the part of the substrate 3 which is not deposited can be preferentially contacted with fresh gas-phase substances.
In an alternative embodiment, the inside of the casing 1 is provided with the insulating layer 15, the insulating layer 15 surrounds and forms the insulating cavity 151, and the material placing plate 2 is arranged inside the insulating cavity 151.
In an alternative embodiment, the induction coil is disposed outside the thermal chamber 151.
In an alternative embodiment, the cooling water enters through the inlet 141 and exits through the outlet 142.
In a preferred embodiment, cooling water is introduced through a water inlet 141 in the bottom end of the device, is flooded upwardly from the bottom end by a water pump or other pressurizing device or structure, flows through the bottom and sides of the device, and is discharged through a water outlet 142.
In an alternative embodiment, the water-cooled sandwich 14 may be a pipe structure, and pipes are densely distributed in the shell 1.
In an alternative embodiment, the shell 1 is provided with a water-cooling interlayer 14 inside, and the water-cooling interlayer 14 is provided with a water inlet 141 and a water outlet 142. The insulating layer 15 is not an absolute thermal insulation, and the heat which permeates out must be taken away by water cooling under long-time work. In order to improve the service life and the use strength at a certain temperature, a water-cooling interlayer 14 structure is adopted, and cooling water is introduced according to the position shown in the figure to form a uniform cooling water flow field, so that the service life of the furnace shell is ensured.
In an alternative embodiment, a gap is left between the insulating layer 15 and the casing 1, and a first supporting portion is disposed on the bottom surface of the casing 1 and is used for supporting the insulating layer 15.
In an alternative embodiment, the bottom surface of the insulating layer 15 is arranged between the material placing plate 2 and the induction coil 4;
in an alternative embodiment, a second supporting portion is disposed on the bottom surface inside the insulating layer 15, and the second supporting portion is used for supporting the material placing plate 2.
The utility model aims at protecting a chemical vapor deposition device, a serial communication port, include: casing 1 is provided with deposit chamber 11 in the casing 1, and casing 1 is provided with air inlet 12 and gas vent 13 and puts flitch 2, puts flitch 2 setting in deposit chamber 11 for place the substrate 3 that needs vapor deposition, and induction coil 4, induction coil 4 set up in deposit chamber 11 inside and be located and put flitch 2 below, and induction coil 4 is used for producing induction field. The utility model discloses a chemical vapor deposition device has designed a chemical vapor deposition device according to the principle of many first coupling field deposition methods, the chemical vapor deposition of mainly used platelike piece, and induction coil 4 produces the induction magnetic field that changes under the effect of electric current through putting flitch 2, makes to put flitch 2 and produces induced-current and generate heat, and heat transfer forms the required temperature of deposit for substrate 3. Because the substrate 3 is in the induction magnetic field, the induction magnetic field attracts particles such as free radicals generated by hydrocarbon cracking to move towards the substrate 3, the collision probability of the particles such as the free radicals and the like with the deposition surface is increased, and the deposition rate is greatly improved.
The above description refers to the embodiments of the present invention. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the invention, and these alternatives and modifications are intended to be within the scope of the invention.
Claims (10)
1. A chemical vapor deposition apparatus, comprising:
the device comprises a shell (1), wherein a deposition cavity (11) is arranged in the shell (1), and the shell (1) is provided with an air inlet (12) and an air outlet (13);
the material placing plate (2) is arranged in the deposition cavity (11) and is used for bearing the substrate (3) needing vapor deposition;
the induction coil (4) is arranged inside the deposition cavity (11) and located below the material placing plate (2), and the induction coil (4) is used for generating an induction magnetic field.
2. The chemical vapor deposition apparatus according to claim 1,
the material placing plate (2) is provided with gas-phase substance passing holes (21), and the gas-phase substance passing holes (21) are used for increasing the contact area of the substrate (3) and the gas-phase substances.
3. The chemical vapor deposition apparatus according to claim 2,
the gas-phase substance passing holes (21) are a plurality of through holes which are formed in the thickness direction of the material placing plate (2).
4. A chemical vapor deposition apparatus according to claim 3,
the gas-phase substances are uniformly distributed on the material placing plate (2) through holes (21).
5. The chemical vapor deposition apparatus according to claim 1,
the plane of the material placing plate (2) is parallel to the plane of the induction coil (4).
6. The chemical vapor deposition apparatus according to claim 1,
the induction coil (4) is connected with an alternating current power supply (5), and the frequency range of the alternating current power supply (5) is as follows: 10-50HZ。
7. The chemical vapor deposition apparatus according to claim 1,
the air inlet (12) is arranged at the top of the shell (1);
the exhaust port (13) is arranged at the bottom of the shell (1).
8. The chemical vapor deposition apparatus according to claim 1,
a heat insulation layer (15) is arranged inside the shell (1), the heat insulation layer (15) surrounds to form a heat insulation cavity (151), and the material placing plate (2) is arranged inside the heat insulation cavity (151);
the air inlet (12) enables the inside of the heat insulation layer (15) to be communicated with the outside of the shell (1), and the air outlet (13) enables the inside of the heat insulation layer (15) to be communicated with the outside of the shell (1).
9. The chemical vapor deposition apparatus according to claim 8,
the induction coil (4) is arranged outside the heat preservation cavity (151).
10. The chemical vapor deposition apparatus according to claim 1,
the shell (1) is internally provided with a water-cooling interlayer (14), and the water-cooling interlayer (14) is provided with a water inlet (141) and a water outlet (142).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922237894.7U CN211872084U (en) | 2019-12-13 | 2019-12-13 | Chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922237894.7U CN211872084U (en) | 2019-12-13 | 2019-12-13 | Chemical vapor deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211872084U true CN211872084U (en) | 2020-11-06 |
Family
ID=73243223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922237894.7U Expired - Fee Related CN211872084U (en) | 2019-12-13 | 2019-12-13 | Chemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211872084U (en) |
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2019
- 2019-12-13 CN CN201922237894.7U patent/CN211872084U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201106 Termination date: 20211213 |