CN211555858U

CN211555858U - Common-emitter dual-IEGT parallel compression joint structure

Info

Publication number: CN211555858U
Application number: CN202020597790.7U
Authority: CN
Inventors: 肖风良; 李伟; 宋中建; 谢文刚; 张志诚; 武可; 张公一
Original assignee: Shandong Taikai High Volt Switchgear Co Ltd
Current assignee: Shandong Taikai High Volt Switchgear Co Ltd
Priority date: 2020-04-21
Filing date: 2020-04-21
Publication date: 2020-09-22
Anticipated expiration: 2030-04-21

Abstract

A common-emitter double-IEGT parallel compression joint structure comprises a first radiator, a first compression joint type IEGT, a second radiator, a second compression joint type IEGT, a third radiator, a collector parallel busbar, a dual-channel driver and an installation shell; the first radiator, the first crimping type IEGT, the second radiator, the second crimping type IEGT, the third radiator, the collector parallel busbar and the dual-channel driver are arranged in the mounting shell. The utility model discloses comprehensively considered aspects such as parallelly connected power component's crimping characteristic, driving characteristic and economic nature, fine solution parallelly connected power component near parasitic inductance induced electromotive force to drive circuit's interference to realized parallelly connected power component the flow equalizing of cut-off process, the advantage is especially obvious when turning off super large short-circuit, thereby obtained the effect that adds up of power component breaking capacity.

Description

Common-emitter dual-IEGT parallel compression joint structure

Technical Field

The utility model relates to a power electronics technical field especially relates to a parallelly connected crimping structure of two IEGT of common emitter.

Background

With the continuous expansion of the development and utilization scale of global renewable energy sources, the flexible direct current power transmission and distribution technology is greatly developed, and the direct current circuit breaker is indispensable electrical equipment for the development of a multi-terminal direct current system to a flexible direct current power grid. In the process of cutting off the current of the direct current breaker, no current zero crossing point exists, and the development of the direct current breaker is seriously restricted.

In order to solve the problem of direct current non-zero-crossing point switching, a common practice at present is to adopt a power electronic switch assembly which takes power semiconductor devices such as an IEGT (injection enhanced Gate transistor)/IGBT (insulated Gate Bipolar transistor)/IGCT (Integrated Gate commutated thyristor) and the like as core switching elements, but the switching capacity of a single power element is very limited, and how to design the power electronic switch assembly with super-strong switching capacity by utilizing the limited switching capacity of the power element is a great problem in front of power engineers.

SUMMERY OF THE UTILITY MODEL

Objects of the invention

In order to solve the technical problems existing in the background technology, the utility model provides a common emitter dual-IEGT parallel compression joint structure, the compression joint force of the parallel power elements is completely consistent, and the completely same compression joint effect is helpful for the parallel power elements to obtain close consistent turn-off characteristics; the gate electrode-emitter structure is completely symmetrical, the parasitic inductance electrically connected between the emitters of the parallel power element is extremely low, and the interference of the induced electromotive force of the parasitic inductance near the emitters to a driving circuit can be avoided; the parallel devices can share one set of driving circuit, so that the consistency of response characteristics of the driving circuit is ensured, the complexity of a system is reduced, the cost is effectively reduced, and the practicability of the power electronic switch assembly is further improved.

(II) technical scheme

The utility model provides a parallelly connected crimping structure of two IEGT of common emitter, including first radiator, first crimping formula IEGT, second radiator, second crimping formula IEGT, third radiator, the parallelly connected female row of collecting electrode, binary channels driver and installation shell; the first radiator, the first crimping type IEGT, the second radiator, the second crimping type IEGT, the third radiator, the collector parallel busbar and the dual-channel driver are arranged in the mounting shell.

The first pressure-welding type IEGT is arranged between the first radiator and the second radiator, and a collector C1 and an emitter E1 are arranged on the first pressure-welding type IEGT 2; collector C1 is in contact with the first heat sink; emitter E1 is in contact with a second heat sink; the second compression-joint type IEGT is arranged between the second radiator and the third radiator, and a collector C2 and an emitter E2 are arranged on the second compression-joint type IEGT; collector C2 is in contact with a third heat sink; the emitter E2 is in contact with the side of the second heat sink away from the emitter E1;

the first radiator, the first compression joint type IEGT, the second radiator, the second compression joint type IEGT and the third radiator are pressed and mounted along the central shaft direction of the common-emitter double-IEGT parallel compression joint structure; two ends of the collector parallel busbar are respectively connected with the first radiator and the third radiator; the dual-channel driver is provided with a gate cable and is respectively in communication connection with the first compression-joint type IEGT and the second compression-joint type IEGT through the gate cable.

Preferably, the mounting shell is equipotential with emitter E1 and emitter E2.

Preferably, the first pressure-welding type IEGT and the second pressure-welding type IEGT are in common emitter pressure mounting, and the structure of the emitter end is completely symmetrical.

Preferably, the first heat sink, the first pressure-contact IEGT, the second heat sink, the second pressure-contact IEGT and the third heat sink are subjected to an equally large axial pressure-fitting force.

Preferably, the collector C1 and the collector C2 are connected by a collector shunt bus bar.

Compared with the prior art, the above technical scheme of the utility model following profitable technological effect has:

the power electronic switch assembly unit is reliable and practical and is provided for the ultra-large-capacity high-voltage direct-current circuit breaker, and the power electronic switch assembly unit has extremely important significance for protecting the safe operation of a flexible direct-current transmission and distribution network;

the method and the device have the advantages that the crimping characteristic, the driving characteristic, the economical efficiency and other aspects of the parallel power element are comprehensively considered, and the problem of interference of induced electromotive force of parasitic inductance near the emitter of the parallel power element on a driving circuit is well solved, so that current sharing of the parallel power element in the switching-on and switching-off process is realized, the advantages are particularly obvious when an oversized short circuit is switched off, and the cumulative effect of the switching-on and switching-off capacity of the power element is obtained.

Drawings

Fig. 1 is a schematic structural diagram of a common-emitter dual-IEGT parallel crimping structure according to the present invention.

Fig. 2 is a schematic circuit diagram of a common-emitter dual-IEGT parallel-connection structure according to the present invention.

Reference numerals: 1. a first heat sink; 2. a first crimp-style IEGT; 3. a second heat sink; 4. a second crimp-style IEGT; 5. a third heat sink; 6. a collector parallel busbar; 7. a dual channel driver.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings. It should be understood that the description is intended to be illustrative only and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.

As shown in fig. 1-2, the present invention provides a common emitter dual-IEGT parallel compression structure, which includes a first heat sink 1, a first compression IEGT2, a second heat sink 3, a second compression IEGT4, a third heat sink 5, a collector parallel busbar 6, a dual-channel driver 7 and an installation shell; the first heat radiator 1, the first pressure-welding type IEGT2, the second heat radiator 3, the second pressure-welding type IEGT4, the third heat radiator 5, the collector parallel busbar 6 and the dual-channel driver 7 are arranged in the mounting shell;

the first pressure-bonded IEGT2 is arranged between the first heat sink 1 and the second heat sink 3, and a collector C1 and an emitter E1 are arranged on the first pressure-bonded IEGT 2; collector C1 is in contact with first heat spreader 1; emitter E1 is in contact with second heat sink 3; the second crimped IEGT4 is arranged between the second heat sink 3 and the third heat sink 5, and a collector C2 and an emitter E2 are arranged on the second crimped IEGT 4; the collector C2 is in contact with the third heat sink 5; the emitter E2 is in contact with a face of the second heat sink 3 remote from the emitter E1;

the first radiator 1, the first pressure-welding type IEGT2, the second radiator 3, the second pressure-welding type IEGT4 and the third radiator 5 are pressed and assembled along the central shaft direction of the common emitter double IEGT parallel pressure-welding structure; two ends of the collector parallel busbar 6 are respectively connected with the first radiator 1 and the third radiator 5; the dual channel driver 7 is provided with a gate cable, and the dual channel driver 7 is respectively connected with the first pressure-welding type IEGT2 and the second pressure-welding type IEGT4 in a communication way through the gate cable.

In an alternative embodiment, the mounting shell is equipotential with emitter E1 and emitter E2.

In an alternative embodiment, the first and second crimped

IEGTs

2, 4 are common emitter press-fit, with the emitter terminal structure being fully symmetrical.

In an alternative embodiment, the first heat sink 1, the first pressure bonded IEGT2, the second heat sink 3, the second pressure bonded IEGT4 and the third heat sink 5 are all subjected to an equal axial pressure force.

In an alternative embodiment, the collector C1 and the collector C2 are connected by a collector shunt bus bar 6.

Providing the first crimp type IEGT2 as G1 and the second crimp type IEGT4 as G2; g1 and G2 are connected in series; two ends of the collector parallel busbar 6 are respectively connected with the first radiator 1 and the third radiator 5, so that a parallel loop of the double-power element is realized; the dual-channel driver 7 provides synchronous driving signals for G1 and G2 through gate cables respectively; since the collector C1 and the collector C2 are connected through the collector shunt busbar 6, parasitic inductances Lsc1 and Lsc2 of the collector shunt busbar 6 are applied to the collector C1 and the collector C2, respectively; however, since the emitter E1 and the emitter E2 share the second heat sink 3, there is no loop parasitic inductance at the emitter terminals of the collector G1 and the collector G2; therefore, when the turn-off operation is carried out, no interference pressure difference exists between the driving signals applied between the gate electrodes and the emitters of the parallel power elements, and therefore synchronization and consistency of the driving signals of the parallel power elements are guaranteed.

The utility model provides a basic condition for the parallel devices to share one set of driving circuit because of the complete symmetry of the emitter terminals of the parallel power elements and the interference of parasitic inductance induced electromotive force in the electric loops of the driver and the gate pole-emitter electrodes of the two parallel power elements; the parallel devices can share one set of driving circuit, so that the consistency of response characteristics of the driving circuit is ensured, the complexity of a system is reduced, the cost is effectively reduced, and the practicability of the power electronic switch assembly is further improved.

It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.

Claims

1. A common emitter double-IEGT parallel compression joint structure is characterized by comprising a first radiator (1), a first compression joint type IEGT (2), a second radiator (3), a second compression joint type IEGT (4), a third radiator (5), a collector parallel busbar (6), a dual-channel driver (7) and an installation shell; the first radiator (1), the first compression joint type IEGT (2), the second radiator (3), the second compression joint type IEGT (4), the third radiator (5), the collector parallel busbar (6) and the dual-channel driver (7) are arranged in the mounting shell;

the first pressure-welding type IEGT (2) is arranged between the first radiator (1) and the second radiator (3), and a collector C1 and an emitter E1 are arranged on the first pressure-welding type IEGT (2); collector C1 is in contact with the first heat sink (1); emitter E1 is in contact with a second heat sink (3); the second compression-joint type IEGT (4) is arranged between the second radiator (3) and the third radiator (5), and a collector C2 and an emitter E2 are arranged on the second compression-joint type IEGT (4); the collector C2 is in contact with the third heat sink (5); the emitter E2 is in contact with one surface of the second heat sink (3) far away from the emitter E1;

the first radiator (1), the first compression joint type IEGT (2), the second radiator (3), the second compression joint type IEGT (4) and the third radiator (5) are pressed and mounted along the central shaft direction of the common-emitter double-IEGT parallel compression joint structure; two ends of the collector parallel busbar (6) are respectively connected with the first radiator (1) and the third radiator (5); the dual-channel driver (7) is provided with a gate cable, and the dual-channel driver (7) is respectively in communication connection with the first pressure-welding type IEGT (2) and the second pressure-welding type IEGT (4) through the gate cable.

2. A common emitter dual IEGT parallel compression structure as claimed in claim 1, wherein the mounting shell is equipotential with respect to emitter E1 and emitter E2.

3. A common emitter dual-IEGT parallel compression structure as claimed in claim 1, wherein the first and second compression-bonded IEGT (2, 4) are common emitter compression-bonded, and the emitter terminal structure is completely symmetrical.

4. A common emitter dual IEGT parallel compression structure according to claim 1, wherein the first heat sink (1), the first compression-bonded IEGT (2), the second heat sink (3), the second compression-bonded IEGT (4) and the third heat sink (5) are all subjected to an equal axial compression force.

5. A common emitter dual IEGT parallel compression structure according to claim 1, wherein the collector C1 and the collector C2 are connected by a collector parallel busbar (6).