CN211529952U - Gallium nitride semiconductor device with integrated free-wheeling diode - Google Patents
Gallium nitride semiconductor device with integrated free-wheeling diode Download PDFInfo
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- CN211529952U CN211529952U CN202020295203.9U CN202020295203U CN211529952U CN 211529952 U CN211529952 U CN 211529952U CN 202020295203 U CN202020295203 U CN 202020295203U CN 211529952 U CN211529952 U CN 211529952U
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Abstract
The utility model provides a gallium nitride semiconductor device with integrated freewheel diode, gallium nitride semiconductor device include along the first transistor area in control and the second transistor area in control of transverse arrangement, and the first transistor area in control is as freewheel diode, and the first transistor area in control includes first grid, first source electrode and first drain electrode, and the positive pole as freewheel diode after first grid is connected with first source electrode electricity, and first drain electrode is as freewheel diode's negative pole. The second transistor region includes a second gate and a second drain, the first gate is electrically connected to the first source and serves as a source of the gallium nitride semiconductor device, the first drain is electrically connected to the second drain and serves as a drain of the gallium nitride semiconductor device, and the second gate serves as a gate of the gallium nitride semiconductor device. The gallium nitride semiconductor device can greatly save the area and has perfect process compatibility.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor device and specifically relates to a gallium nitride semiconductor device with integrated freewheeling diode is related to.
Background
As a typical representative of the third generation semiconductor materials, the wide bandgap semiconductor gallium nitride (GaN) has excellent properties that many silicon materials do not have, is an excellent semiconductor material for high frequency, high voltage, high temperature and high power applications, and has a wide application prospect in the civil and commercial fields. GaN-based transistors are commonly used in DC-DC circuits, and in order to reduce the power consumption of the circuit during switching, a freewheeling diode is usually connected in parallel across the transistor as shown in fig. 1. The circuit is composed of two discrete components: one transistor and one diode. The structure has large area and high cost, and is not beneficial to integrating more components.
Disclosure of Invention
The utility model aims at providing a can greatly save the area, have the compatible gallium nitride semiconductor device that has integrated free wheeling diode of perfect technology simultaneously.
In order to achieve the above object, the present invention provides a gallium nitride semiconductor device with an integrated freewheeling diode, including along the first transistor area of transverse arrangement and the second transistor area of area, the first transistor area of area is as freewheeling diode, and the first transistor area of area includes first grid, first source and first drain electrode, and the positive pole as freewheeling diode after first grid is connected with first source electricity, and first drain electrode is as freewheeling diode's negative pole. The second transistor region includes a second gate and a second drain, the first gate is electrically connected to the first source and serves as a source of the gallium nitride semiconductor device, the first drain is electrically connected to the second drain and serves as a drain of the gallium nitride semiconductor device, and the second gate serves as a gate of the gallium nitride semiconductor device.
As can be seen from the above, the area is greatly saved by integrating the freewheel diode and the transistor on one chip. In addition, the free wheel diode is formed by short-circuiting the grid electrode and the source electrode of the transistor, the transistor is also a transistor in nature, the integration of the two transistors has perfect process compatibility, and the process is easy to realize.
Preferably, the first source region serves as a source of the second transistor region.
Therefore, the chip area is further reduced by the structure that the first transistor area and the second transistor area share the source electrode.
In a further scheme, in a transverse direction, the first source electrode and the first drain electrode are respectively located on two sides of the first grid electrode, the first source electrode and the second drain electrode are respectively located on two sides of the second grid electrode, and the first source electrode is located between the first grid electrode and the second grid electrode.
Preferably, the second transistor region further includes a second source electrode, the second source electrode is spaced apart from the first source electrode, and the second source electrode is electrically connected to the first source electrode and then serves as a source electrode of the gallium nitride semiconductor device.
In a further scheme, in a transverse direction, the first source electrode and the first drain electrode are respectively located on two sides of the first grid electrode, the second source electrode and the second drain electrode are respectively located on two sides of the second grid electrode, the first source electrode and the second source electrode are both located between the first grid electrode and the second grid electrode, and the second source electrode is located between the first source electrode and the second grid electrode.
It can be seen that the first source electrode and the second source electrode are both located between the first gate electrode and the second gate electrode, so that the distance between the first source electrode and the second source electrode is shortest, and the electrical connection between the first source electrode and the second source electrode is convenient to realize.
Preferably, the first transistor region is a high electron mobility transistor.
In a preferred embodiment, the gallium nitride semiconductor device comprises a substrate, and a transition layer, a channel layer and a barrier layer which are sequentially grown on the substrate from bottom to top along a longitudinal direction. The first grid electrode, the first source electrode, the first drain electrode, the second grid electrode and the second drain electrode are all arranged above the barrier layer. The gallium nitride semiconductor device further comprises a first P-type gallium nitride layer and a second P-type gallium nitride layer, wherein the first P-type gallium nitride layer is located between the first grid electrode and the barrier layer, and the second P-type gallium nitride layer is located between the second grid electrode and the barrier layer.
The further proposal is that the material of the channel layer is gallium nitride, and the material of the barrier layer is aluminum gallium nitrogen.
Drawings
Fig. 1 is a circuit diagram of a transistor device and a freewheeling diode connected in parallel in a conventional DC-DC circuit.
Fig. 2 is a schematic structural diagram of a first embodiment of the gallium nitride semiconductor device according to the present invention.
Fig. 3 is a schematic structural diagram of a gallium nitride semiconductor device according to a second embodiment of the present invention.
The present invention will be further explained with reference to the drawings and examples.
Detailed Description
First embodiment of gallium nitride semiconductor device
Referring to fig. 2, the gallium nitride semiconductor device with an integrated freewheeling diode of the present embodiment is an epitaxial multilayer structure fabricated on a substrate 3, and includes the substrate 3, and a transition layer 4, a channel layer 5, and a barrier layer 6 sequentially grown on the substrate 3 from bottom to top in the longitudinal direction. The channel layer 5 is made of gallium nitride, and the barrier layer 6 is made of aluminum gallium nitride.
The gallium nitride semiconductor device is laterally divided into a first Transistor region 1 and a second Transistor region 2, and both the first Transistor region 1 and the second Transistor region 2 are High Electron Mobility Transistors (HEMTs).
The first transistor region 1 includes a first gate 11, a first source 12, and a first drain 13, the first transistor region 1 functions as a freewheeling diode, the first gate 11 is electrically connected to the first source 12 and then functions as an anode 14 of the freewheeling diode, and the first drain 13 functions as a cathode 15 of the freewheeling diode.
The second transistor region 2 includes a second gate electrode 21 and a second drain electrode 22, and the second transistor region 2 shares a source with the first transistor region 1, i.e., the first source electrode 12 simultaneously serves as a source electrode of the second transistor region 2.
The first gate electrode 11, the first source electrode 12, the first drain electrode 13, the second gate electrode 21, and the second drain electrode 22 are all disposed above the barrier layer 6. The gallium nitride semiconductor device further includes a first P-type gallium nitride layer (P-GaN) 71 and a second P-type gallium nitride layer 72, the first P-type gallium nitride layer 71 being located between the first gate electrode 11 and the barrier layer 6, the second P-type gallium nitride layer 72 being located between the second gate electrode 21 and the barrier layer 6. In the transverse direction, the first source electrode 12 and the first drain electrode 13 are respectively located at two sides of the first gate electrode 11, the first source electrode 12 and the second drain electrode 22 are respectively located at two sides of the second gate electrode 21, and the first source electrode 12 is located between the first gate electrode 11 and the second gate electrode 21.
The first gate 11 is electrically connected to the first source 12 and serves as a source of the gallium nitride semiconductor device, the first drain 13 is electrically connected to the second drain 22 and serves as a drain 10 of the gallium nitride semiconductor device, and the second gate 21 serves as a gate of the gallium nitride semiconductor device.
Second embodiment of gallium nitride semiconductor device
Referring to fig. 3, in the present embodiment, the second transistor region 20 further includes a second source 23, the second source 23 is spaced apart from the first source 212, and the second source 23 is electrically connected to the first source 212 to serve as a source 24 of the gan semiconductor device. In the transverse direction, the first source electrode 212 and the first drain electrode 213 are respectively located at two sides of the first gate electrode 211, the second source electrode 23 and the second drain electrode 222 are respectively located at two sides of the second gate electrode 221, the first source electrode 212 and the second source electrode 23 are both located between the first gate electrode 211 and the second gate electrode 221, and the second source electrode 23 is located between the first source electrode 212 and the second gate electrode 221.
As can be seen from the above, the area is greatly saved by integrating the freewheel diode and the transistor on one chip. The structure that the first transistor area and the second transistor area share the source electrode further reduces the chip area. In addition, the free wheel diode is formed by short-circuiting the grid electrode and the source electrode of the transistor, the transistor is also a transistor in nature, the integration of the two transistors has perfect process compatibility, and the process is easy to realize.
Finally, it should be emphasized that the above-described preferred embodiments of the present invention are merely examples of implementations, and are not intended to limit the scope of the present invention, as those skilled in the art will appreciate that various changes and modifications may be made without departing from the spirit and scope of the invention, and it is intended to cover all such modifications, equivalents, and improvements as fall within the true spirit and scope of the invention.
Claims (8)
1. A gallium nitride semiconductor device with an integrated free-wheeling diode, comprising a first transistor region and a second transistor region arranged along a lateral direction;
the first transistor area is used as the freewheeling diode and comprises a first grid electrode, a first source electrode and a first drain electrode, the first grid electrode is electrically connected with the first source electrode and then used as the anode of the freewheeling diode, and the first drain electrode is used as the cathode of the freewheeling diode;
the second transistor region includes a second gate and a second drain;
the first grid electrode is electrically connected with the first source electrode and then used as a source electrode of the gallium nitride semiconductor device, the first drain electrode is electrically connected with the second drain electrode and then used as a drain electrode of the gallium nitride semiconductor device, and the second grid electrode is used as a grid electrode of the gallium nitride semiconductor device.
2. The gallium nitride semiconductor device according to claim 1, wherein:
the first source is used as the source of the second transistor region.
3. The gallium nitride semiconductor device according to claim 2, wherein:
in a transverse direction, the first source electrode and the first drain electrode are respectively located on two sides of the first grid electrode, the first source electrode and the second drain electrode are respectively located on two sides of the second grid electrode, and the first source electrode is located between the first grid electrode and the second grid electrode.
4. The gallium nitride semiconductor device according to claim 1, wherein:
the second transistor region further comprises a second source electrode which is arranged at an interval with the first source electrode;
and the second source electrode is electrically connected with the first source electrode and then is used as a source electrode of the gallium nitride semiconductor device.
5. The gallium nitride semiconductor device according to claim 4, wherein:
in a transverse direction, the first source and the first drain are respectively located at two sides of the first gate, the second source and the second drain are respectively located at two sides of the second gate, the first source and the second source are both located between the first gate and the second gate, and the second source is located between the first source and the second gate.
6. The gallium nitride semiconductor device according to any one of claims 1 to 5, wherein:
the first transistor region is a high electron mobility transistor.
7. The gallium nitride semiconductor device according to any one of claims 1 to 5, wherein:
the gallium nitride semiconductor device comprises a substrate, and a transition layer, a channel layer and a barrier layer which are sequentially grown on the substrate from bottom to top along the longitudinal direction;
the first gate, the first source, the first drain, the second gate, and the second drain are all disposed above the barrier layer;
the gallium nitride semiconductor device further comprises a first P-type gallium nitride layer and a second P-type gallium nitride layer, wherein the first P-type gallium nitride layer is located between the first grid electrode and the barrier layer, and the second P-type gallium nitride layer is located between the second grid electrode and the barrier layer.
8. The gallium nitride semiconductor device according to claim 7, wherein:
the channel layer is made of gallium nitride, and the barrier layer is made of aluminum gallium nitride.
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