CN211311658U

CN211311658U - Silicon chip electroplating transmission device

Info

Publication number: CN211311658U
Application number: CN201922454070.5U
Authority: CN
Inventors: 李为民
Original assignee: Individual
Current assignee: Guangzhou Suikai Electric Power Co ltd
Priority date: 2019-12-28
Filing date: 2019-12-28
Publication date: 2020-08-21
Anticipated expiration: 2029-12-28

Abstract

The utility model relates to the photovoltaic technical field, in particular to a silicon wafer electroplating transmission device, which comprises a machine base and a driving shaft, driven shaft and conducting shaft, the driving shaft passes through the rotating electrical machines drive, the rotating electrical machines is installed on the frame, be provided with the action wheel on the driving shaft, the upper surface of the periphery butt silicon chip of action wheel, the periphery protrusion of driving shaft sets up a plurality of convex parts that have a tip, the action wheel includes the rim of a wheel of rubber and wraps up the first conducting layer in its periphery, the inner circle diameter of rim of a wheel is greater than the diameter of driving shaft, the tip can be inserted in the rim of a wheel, driven shaft parallel arrangement is in the below of driving shaft, be provided with from the driving wheel on the driven shaft, the lower surface of the periphery butt silicon chip from the driving wheel, the activity is provided with the conducting strip on the conducting shaft, the one end of conducting strip is provided with. The utility model discloses a transmission of silicon chip electroplating transmission device is all good with electrically conductive effect, and the silicon chip can not crushed.

Description

Silicon chip electroplating transmission device

Technical Field

The utility model relates to the field of photovoltaic technology, especially, relate to a transmission device is electroplated to silicon chip.

Background

Before assembly, a silicon wafer of a photovoltaic module needs to be subjected to electroplating treatment, and the electroplating is usually realized in a moving mode. As shown in fig. 1, the existing electroplating transmission device includes a machine base, a rotating motor 1 'is arranged on the machine base, an output shaft end of the rotating motor 1' is connected with a driving shaft 2 ', a spring 3' rotating together with the driving shaft 2 'is sleeved on the driving shaft 2', the driving shaft 2 'is connected with a copper sheet 5' through a wire 4 ', the spring 3' can be electrically conducted when being in surface contact with a silicon wafer 6 ', the surface of the silicon wafer 6' can be electroplated after being electrified, a driven shaft 7 'is arranged below the driving shaft 2', a driven roller 8 'is arranged on the driven shaft 7', the silicon wafer 6 'is placed on the driven roller 8', the spring 3 'on the driving shaft 2' is abutted against the upper surface of the silicon wafer 6 ', and the driving shaft 2' rotates to push the silicon wafer 6. The prior art has the following problems: 1. the spring 3 'is expensive and easy to deform, and the deformed spring 3' cannot be used continuously and cannot be repaired; 2. the spring 3 'is easy to crush the silicon chip 6'; 3. the spring 3 ' is easy to oxidize, so that the conductivity is reduced, and the spring 3 ' needs to be disassembled and cleaned regularly to ensure the conductivity of the spring 3 ', which is time-consuming and labor-consuming.

SUMMERY OF THE UTILITY MODEL

An object of the embodiment of the utility model is to provide a transmission device is electroplated to silicon chip, its simple structure, transmission and electrically conductive effect are all good, and the silicon chip can not crushed.

To achieve the purpose, the embodiment of the present invention adopts the following technical solutions:

the silicon wafer electroplating transmission device comprises:

a machine base;

the silicon wafer polishing machine comprises a base, a driving shaft, a plurality of convex parts and a first conducting layer, wherein the driving shaft is driven by a rotating motor, the rotating motor is installed on the base, a driving wheel is arranged on the driving shaft, the periphery of the driving wheel is abutted to the upper surface of a silicon wafer, the periphery of the driving shaft is convexly provided with the plurality of convex parts, the end parts of the convex parts are pointed ends, the driving wheel comprises a rubber wheel ring and the first conducting layer wrapped on the periphery of the wheel ring, the diameter of the inner ring of the wheel ring is larger than that of the driving shaft;

the driven shaft is arranged on the base through a first support and is arranged below the driving shaft in parallel, a driven wheel capable of rotating along the axis of the driven shaft is arranged on the driven shaft, and the periphery of the driven wheel is abutted against the lower surface of the silicon wafer;

the conductive shaft is arranged above the driving shaft at intervals, a conductive sheet is movably arranged on the conductive shaft, one end of the conductive sheet is provided with a sleeve which is sleeved outside the conductive shaft, the other end of the conductive sheet is overlapped on the periphery of the driving wheel, the conductive sheet can be electrically conducted with the first conductive layer, the conductive shaft is connected with a copper sheet through a wire, and the copper sheet is arranged on the machine base.

As a preferable scheme of the silicon wafer electroplating transmission device, the height of the convex part protruding out of the driving shaft is less than half of the thickness of the wheel ring.

As a preferable scheme of the silicon wafer electroplating transmission device, a limiting part for limiting the driving wheel to move along the length direction of the driving shaft is arranged on the driving shaft.

As a preferred scheme of the silicon wafer electroplating transmission device, a threaded hole is formed in the driving shaft along the radial direction of the driving shaft, the limiting part is a limiting screw rod, one end of the limiting screw rod is screwed in the threaded hole, and the other end of the limiting screw rod extends out of the driving shaft.

As a preferred scheme of the silicon wafer electroplating conveying device, two limiting screw rods are arranged corresponding to each driving wheel, and the driving wheel is positioned between the two limiting screw rods.

As a preferred scheme of the silicon wafer electroplating transmission device, the conducting plate is arc-shaped, and the radius of the inner arc surface of the conducting plate is matched with the radius of the periphery of the driving wheel.

As a preferable scheme of the silicon wafer electroplating transmission device, the inner wall of the sleeve is electroplated with a wear-resistant second conducting layer.

As a preferred scheme of the silicon wafer electroplating transmission device, a plurality of driving wheels are arranged on the driving shaft at intervals along the length direction of the driving shaft, and one conducting strip is arranged corresponding to each driving wheel.

As a preferred scheme of the silicon chip electroplating transmission device, the driven wheel is a rubber wheel; or the like, or, alternatively,

the periphery of following the driving wheel can be dismantled and be provided with the rubber buffer layer.

As a preferable scheme of the silicon wafer electroplating transmission device, the first conductive layer is adhered to the periphery of the wheel ring.

The utility model discloses beneficial effect does: the inner ring of the driving wheel on the driving shaft is larger than the driving shaft, so that the silicon wafer can be supported and driven to move by the self gravity of the driving wheel, the silicon wafer is not easy to crush, and meanwhile, the driving wheel is easy to detach from the driving shaft, so that oxides on the first conducting layer are convenient to clean, and the conducting performance is improved; through setting up the most advanced convex part of area, the inner circle of the action wheel of rubber preparation can be inserted to the convex part, guarantees that the driving shaft can drive the action wheel smoothly and rotate, and the action wheel light in weight of rubber preparation has also reduced the risk that the silicon chip was crushed to a certain extent simultaneously.

Drawings

The present invention will be described in further detail with reference to the accompanying drawings and examples.

Fig. 1 is a schematic structural diagram of a conventional silicon wafer electroplating transmission device.

Fig. 2 is a schematic structural view of an electroplating conveying device according to an embodiment of the present invention.

Fig. 3 is an assembly diagram of the driving wheel, the driving shaft, the conductive shaft and the conductive sheet according to the embodiment of the present invention.

In fig. 1:

1', a rotating electrical machine; 2', a driving shaft; 3', a spring; 4', a wire; 5', copper sheets; 6', a silicon wafer; 7', a driven shaft; 8' and a driven roller.

In fig. 2 and 3:

1. a machine base; 2. a drive shaft; 21. a convex portion; 3. a rotating electric machine; 4. a driving wheel; 41. a wheel ring; 42. a first conductive layer; 5. a silicon wafer; 6. a driven shaft; 7. a first support; 8. a driven wheel; 9. a conductive shaft; 10. a conductive sheet; 101. a sleeve; 11. a wire; 12. a copper sheet; 13. a second support.

Detailed Description

In order to make the technical problems, technical solutions and technical effects achieved by the present invention more clear, the embodiments of the present invention will be described in further detail with reference to the accompanying drawings, and obviously, the described embodiments are only some embodiments, not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by those skilled in the art without creative efforts belong to the protection scope of the present invention.

In the description of the present invention, unless expressly stated or limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, e.g., as meaning permanently connected, detachably connected, or integral to one another; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In the present disclosure, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact between the first and second features, or may comprise contact between the first and second features not directly. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.

As shown in fig. 2 and 3, an embodiment of the present invention provides a silicon wafer electroplating transmission device, which comprises a frame 1, a driving shaft 2, a driven shaft 6 and a conductive shaft 9, wherein the driving shaft 2 is driven by a rotating motor 3, the rotating motor 3 is installed on the frame 1, the driving shaft 2 is provided with a driving wheel 4, the periphery of the driving wheel 4 abuts against the upper surface of a silicon wafer 5, the periphery of the driving shaft 2 is convexly provided with a plurality of protrusions 21, the end of each protrusion 21 is a tip, the driving wheel 4 comprises a wheel ring 41 made of rubber and a first conductive layer 42 wrapped on the periphery of the wheel ring 41, the diameter of the inner ring of the wheel ring 41 is larger than the diameter of the driving shaft 2, the tip can be inserted into the wheel ring 41, the driven shaft 6 is installed on the frame 1 through a first support 7, the driven shaft 6 is arranged below the driving shaft 2 in parallel, be provided with on the driven shaft 6 and follow the axis pivoted of driven shaft 6 is from driving wheel 8, follow the periphery butt of driving wheel 8 the lower surface of silicon chip 5, conductive shaft 9 interval sets up the top of driving shaft 2, the activity is provided with conducting strip 10 on the conductive shaft 9, the one end of conducting strip 10 is provided with the cover and establishes sleeve 101 outside the conductive shaft 9, and other end overlap joint is in the periphery of action wheel 4, conducting strip 10 can with first conducting layer 42 electric conductance, conductive shaft 9 is connected with copper sheet 12 through wire 11, copper sheet 12 sets up on the frame 1. The inner ring of the driving wheel 4 on the driving shaft 2 is larger than the driving shaft 2, so that the silicon wafer 5 can be supported and driven to move by the self-gravity of the driving wheel 4, the silicon wafer 5 is not easy to crush, and meanwhile, the driving wheel 4 is easy to detach from the driving shaft 2, so that the oxide on the first conducting layer 42 is convenient to clean, and the conducting performance is improved; through setting up the most advanced convex part 21 of area, convex part 21 can insert the inner circle of the action wheel 4 of rubber preparation, guarantees that driving shaft 2 can drive action wheel 4 smoothly and rotate, and the action wheel 4 weight of rubber preparation is light simultaneously, has also reduced the risk that silicon chip 5 was crushed to a certain extent.

In this embodiment, the height of the protrusion 21 protruding from the axle shaft 2 is less than half the thickness of the rim 41. The design can facilitate the transmission matching of the driving shaft 2 and the driving wheel 4, and can also effectively prevent the convex part 21 from penetrating through the wheel ring 41.

In one embodiment, the driving shaft 2 is provided with a limiting portion for limiting the driving wheel 4 to move along the length direction of the driving shaft 2.

In this embodiment, a threaded hole is formed in the driving shaft 2 along the radial direction thereof, the limiting portion is a limiting screw, one end of the limiting screw is screwed in the threaded hole, and the other end of the limiting screw extends outside the driving shaft 2. The limiting screw is convenient to detach, the dismounting work of the driving wheel 4 cannot be obstructed, and the operation difficulty is reduced.

Preferably, two limit screws are arranged corresponding to each driving wheel 4, and the driving wheel 4 is located between the two limit screws.

In one embodiment, the conductive sheet 10 is arc-shaped, and the radius of the inner arc surface of the conductive sheet 10 matches with the outer circumference radius of the driving wheel 4. The design can make the contact area of the conducting strip 10 and the driving wheel 4 larger, and the conducting effect is better.

In this embodiment, the inner wall of the sleeve 101 is plated with a wear resistant second conductive layer. The second conductive layer disposed on the inner wall of the sleeve 101 can increase the electrical connection between the conductive sheet 10 and the conductive shaft 9, and since the conductive sheet and the conductive shaft 9 are often rotated relatively, it is necessary to provide a wear-resistant structure to ensure good conductivity.

In one embodiment, the driving shaft 2 is provided with a plurality of driving wheels 4 at intervals along the length direction thereof, and one conductive sheet 10 is disposed corresponding to each driving wheel 4. The arrangement of the driving wheels 4 can enable the silicon wafers 5 to be more stable in the transmission process, and the probability of fragments of the silicon wafers 5 can be effectively reduced.

In order to further reduce the probability of the silicon chip 5 being broken, the driven wheel 8 is a rubber wheel, or a rubber buffer layer is detachably arranged on the periphery of the driven wheel 8.

In one embodiment, the first conductive layer 42 is adhered to the outer periphery of the wheel ring 41. The first conductive layer 42 is fixed by adhesion in a manner that facilitates assembly and disassembly of the first conductive layer with the wheel ring 41. In other embodiments, the first conductive layer 42 may be fixed to the outer periphery of the wheel ring 41 by a fixing member such as a screw.

The both ends of conducting shaft 9 set up second support 13, and second support 13 is installed on frame 1, and second support 13 provides the support for conducting shaft 9, makes conducting shaft 9 and the surperficial interval setting of frame 1, also makes conducting shaft 9 can be located driving shaft 2 directly over simultaneously to the tip that makes conducting strip 10 can be set up and realize the electricity at the surface of action wheel 4 and connect.

In the description herein, it is to be understood that the terms "upper", "lower", "right", and the like are used in a descriptive sense or positional relationship based on the orientation or positional relationship shown in the drawings for convenience of description and simplicity of operation, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and therefore should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used merely for descriptive purposes and are not intended to have any special meaning.

In the description herein, references to the description of "an embodiment," "an example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.

Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be appropriately combined to form other embodiments as will be appreciated by those skilled in the art.

The technical principle of the present invention is described above with reference to specific embodiments. The description is made for the purpose of illustrating the principles of the invention and should not be construed in any way as limiting the scope of the invention. Based on the explanations herein, those skilled in the art will be able to conceive of other embodiments of the present invention without any inventive effort, which would fall within the scope of the present invention.

Claims

1. A silicon chip electroplating transmission device is characterized by comprising:

a machine base;

2. The silicon wafer electroplating conveying device according to claim 1, wherein the height of the convex part protruding from the driving shaft is less than half of the thickness of the wheel ring.

3. The silicon wafer electroplating conveying device according to claim 1, wherein the driving shaft is provided with a limiting part for limiting the driving wheel to move along the length direction of the driving shaft.

4. The silicon wafer electroplating conveying device according to claim 3, wherein the driving shaft is provided with a threaded hole along the radial direction thereof, the limiting part is a limiting screw rod, one end of the limiting screw rod is screwed in the threaded hole, and the other end of the limiting screw rod extends outside the driving shaft.

5. The silicon wafer electroplating conveying device according to claim 4, wherein two limiting screws are arranged corresponding to each driving wheel, and the driving wheel is positioned between the two limiting screws.

6. The silicon wafer electroplating conveying device according to claim 1, wherein the conducting plate is arc-shaped, and the radius of the inner arc surface of the conducting plate is matched with the outer circumference radius of the driving wheel.

7. The silicon wafer electroplating transfer apparatus of claim 1, wherein the inner wall of the sleeve is plated with a wear resistant second conductive layer.

8. The silicon wafer electroplating conveying device according to claim 1, wherein a plurality of driving wheels are arranged on the driving shaft at intervals along the length direction of the driving shaft, and one conducting strip is arranged corresponding to each driving wheel.

9. The silicon wafer electroplating conveying device according to any one of claims 1 to 8, wherein the driven wheel is a rubber wheel; or the like, or, alternatively,

10. The silicon wafer electroplating conveying device according to any one of claims 1 to 8, wherein the first conductive layer is adhered to the periphery of the wheel ring.