CN211311577U - Air inlet device, reaction chamber and semiconductor processing equipment - Google Patents
Air inlet device, reaction chamber and semiconductor processing equipment Download PDFInfo
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- CN211311577U CN211311577U CN201922221785.6U CN201922221785U CN211311577U CN 211311577 U CN211311577 U CN 211311577U CN 201922221785 U CN201922221785 U CN 201922221785U CN 211311577 U CN211311577 U CN 211311577U
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Abstract
The utility model provides an air inlet unit for to reaction chamber transport process gas in the semiconductor processing equipment, air inlet unit includes: cavity and a plurality of first gas transmission pipeline all are provided with the second gas transmission pipeline on every first gas transmission pipeline, wherein: each first gas transmission pipeline is provided with a first gas inlet, a second gas inlet and a first gas outlet, the first gas outlet is communicated with the gas inlet of at least one gas inlet cavity, the first gas inlet is communicated with the gas outlet of the second gas transmission pipeline, the second gas inlet is communicated with a first gas source for providing source gas, and the gas inlet of the second gas transmission pipeline is communicated with a second gas source for providing doping gas; and the second gas transmission pipeline is provided with a flow control module, and the flow control module is used for controlling the flow of the doping gas transmitted by the second gas transmission pipeline. The utility model also provides a reaction chamber and semiconductor processing equipment. The utility model discloses can make the resistivity of substrate surface film-forming unanimous in the reaction chamber.
Description
Technical Field
The utility model relates to the technical field of semiconductor preparation, in particular to an air inlet device,
A reaction chamber and a semiconductor processing device.
Background
The epitaxial growth refers to growing a single crystal layer on a substrate in the same crystal orientation as the substrate, and the main parameters to be controlled in the epitaxial growth process include temperature, source gas flow, carrier gas flow, doping gas flow and the like. Specifically, in order to meet the requirements of the process for the thickness uniformity and resistivity uniformity of the film formed on the substrate, it is necessary to avoid the generation of fluctuation, turbulence and convection vortex of the process gas on the substrate surface, and therefore, the flow rate of the process gas transported to all over the substrate surface should be kept uniform during the process to keep the gas flow on the substrate stable.
However, the lack of control over the flow rate of the dopant gas in the prior art, when other factors occur to disturb the resistivity of the film formed on the substrate (e.g., temperature), the resistivity of the disturbed film on the substrate may be larger or smaller, which may affect the uniformity of the resistivity of the film formed on the substrate.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least, provide an air inlet unit, reaction chamber and epitaxial growth equipment.
In order to achieve the above object, the present invention provides a gas inlet device for delivering process gas to a reaction chamber in a semiconductor processing apparatus, wherein the process gas comprises source gas and dopant gas; the air intake device includes: the air inlet pipeline comprises a cavity and a plurality of first air transmission pipelines, wherein a plurality of air inlet cavities are formed in the cavity, and each air inlet cavity is provided with an air inlet and an air outlet; wherein the content of the first and second substances,
every all be provided with the second gas transmission pipeline on the first gas transmission pipeline, wherein:
each first gas transmission pipeline is provided with a first gas inlet, a second gas inlet and a first gas outlet, the first gas outlet is communicated with the gas inlet of at least one gas inlet cavity, the first gas inlet is communicated with the gas outlet of the second gas transmission pipeline, the second gas inlet is communicated with a first gas source for providing source gas, and the gas inlet of the second gas transmission pipeline is communicated with a second gas source for providing doping gas; and the second gas transmission pipeline is provided with a flow control module, and the flow control module is used for controlling the flow of the doping gas transmitted by the second gas transmission pipeline.
Optionally, the flow control module comprises a first pneumatic valve.
Optionally, a pressure stabilizing module is further disposed on the second gas transmission pipeline, and the pressure stabilizing module is configured to adjust the pressure of the gas in the second gas transmission pipeline, so that the pressure of the gas in each part of the second gas transmission pipeline is consistent.
Optionally, the second gas transmission pipeline is also provided with a gas outlet; the voltage stabilization module includes:
exhaust pipe, setting are in second pneumatic valve and back pressure valve on the exhaust pipe, just the air inlet of exhaust pipe with the gas vent intercommunication of second gas transmission pipeline, the second pneumatic valve sets up the back pressure valve with between the air inlet of exhaust pipe.
Optionally, the cavity has an air inlet end face facing the reaction cavity; the air outlets of the air inlet cavities are horizontally arranged on the air inlet end surface;
the plurality of intake chambers includes: an outer zone air intake cavity and an inner zone air intake cavity; the gas outlets of the gas inlet cavity of the outer zone are positioned at two ends of the gas inlet end surface and are used for respectively conveying process gas to the edge areas at two sides of the reaction cavity;
and the gas outlet of the inner area gas inlet cavity is positioned in the middle of the gas inlet end surface and is used for conveying process gas to the middle area of the reaction cavity.
Optionally, a flow equalizing plate is arranged on the air inlet end face of the cavity;
the flow equalizing plate is provided with a plurality of groups of vent holes, each group of vent holes comprises a plurality of vent holes, each air inlet cavity corresponds to one group of vent holes, the air inlet ends of the vent holes are communicated with the corresponding air inlet cavities, and the air outlet ends of the vent holes are communicated with the reaction cavity.
Optionally, the plurality of first air delivery conduits comprises: an inner zone gas transmission pipeline and an outer zone gas transmission pipeline;
the cavity is also formed with: the air inlet of the inner area air inlet cavity is communicated with the air outlet of the inner area air conveying pipeline through the inner area air inlet channel;
the outer zone air inlet channel is positioned above the outer zone air inlet cavity, and the air inlet of each outer zone air inlet cavity is communicated with the air outlet of the outer zone air conveying pipeline through the outer zone air inlet channel.
The utility model also provides a reaction chamber, wherein, include: the reaction chamber and the air inlet device are arranged on one side of the reaction chamber; the air inlet device adopts the air inlet device.
Optionally, a base is arranged in the reaction chamber, and the base is used for bearing a substrate; the base can rotate under the drive of the drive device.
The utility model also provides a semiconductor processing equipment, wherein, including foretell reaction chamber.
The utility model discloses following beneficial effect has:
the utility model provides an among the air inlet unit, all be provided with the gaseous flow of doping that flow control module comes control output on every second gas transmission pipeline, doping is carried to the first gas transmission pipeline that corresponds with this second gas transmission pipeline by the second gas transmission pipeline, later, carries to the chamber of admitting air that corresponds with this first gas transmission pipeline through this first gas transmission pipeline, chamber of admitting air and reaction chamber intercommunication, doping is gaseous through the chamber of admitting air get into the reaction chamber in with the region that this chamber of admitting air corresponds. Because the resistivity of each position in the film layer formed on the surface of the substrate is related to the flow of the doping gas in the corresponding area, the flow of the doping gas in each area in the reaction cavity can be controlled through each flow control module according to the actual process requirements, so that the resistivity of the film formed on the surface of the substrate is consistent, and the resistivity uniformity of the product is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of an air intake device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a flow control module and a pressure stabilizing module disposed on a second gas transmission pipeline according to an embodiment of the present invention;
fig. 3a and fig. 3b are respectively perspective views of two viewing angles of the cavity provided by the embodiment of the present invention;
fig. 4a is a front view of a chamber provided with a flow equalizing plate according to an embodiment of the present invention;
fig. 4b is a cross-sectional view along line AA' of fig. 4a according to an embodiment of the present invention;
fig. 4c is a cross-sectional view of fig. 4b along the cross-sectional line BB' according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a reaction chamber according to an embodiment of the present invention.
Detailed Description
The following detailed description of the embodiments of the present invention will be made with reference to the accompanying drawings. It is to be understood that the description of the embodiments herein is for purposes of illustration and explanation only and is not intended to limit the invention.
The embodiment of the utility model provides a gas inlet unit, figure 1 is the utility model provides a gas inlet unit's schematic structure diagram, as shown in figure 1, this gas inlet unit is arranged in the semiconductor processing equipment to reaction chamber 3 transport process gas, includes source gas and dopant gas in the process gas. The air intake device includes: the air inlet structure comprises a cavity body 1 and a plurality of first air transmission pipelines 2, wherein a plurality of air inlet cavities 12 are formed in the cavity body 1, and each air inlet cavity 12 is provided with an air inlet and an air outlet. Every is provided with second gas transmission pipeline 4 on 2, wherein: each first gas transmission pipeline 2 is provided with a first gas inlet 21, a second gas inlet 22 and a first gas outlet 23, the first gas outlet 23 is communicated with the gas inlet of at least one gas inlet cavity 12, the first gas inlet 21 is communicated with the gas outlet of the second gas transmission pipeline 4, the second gas inlet 22 is communicated with a first gas source for providing source gas, and the gas inlet of the second gas transmission pipeline 4 is communicated with a second gas source for providing doping gas. The second gas transmission pipeline 4 is provided with a flow control module 41, and the flow control module 41 is used for controlling the flow of the doping gas transmitted by the second gas transmission pipeline 4.
Specifically, the gas outlet of each gas inlet chamber 12 may correspond to different regions in the reaction chamber 3, so as to control the flow rate of the doping gas in the different regions in the reaction chamber 3. The process gas in the first gas transmission pipeline 2 further comprises carrier gas, wherein the carrier gas can be transmitted into the first gas transmission pipeline 2 from the second gas inlet 22 after forming mixed gas with the source gas;
a third air inlet (not shown) may also be provided in the first air line 2, through which the carrier gas is conveyed into the first air line 2. A third pneumatic valve (not shown in the figure) may be arranged on the first gas line 2, by means of which third pneumatic valve the total flow of process gas through the first gas line 2 is controlled.
Adopt the air inlet unit of this embodiment, all be provided with flow control module 41 on every second gas transmission pipeline 4 and control the flow of the doping gas of output, doping gas is carried to the first gas transmission pipeline 2 that corresponds with this second gas transmission pipeline 4 by second gas transmission pipeline 4, later, carries to the intake chamber 12 that corresponds with this first gas transmission pipeline 2 through this first gas transmission pipeline 2, intake chamber 12 and reaction chamber 3 intercommunication, doping gas gets into the reaction chamber 3 through intake chamber 12 in with the region that this intake chamber 12 corresponds. Because the resistivity of each position in the film formed on the surface of the substrate is related to the flow rate of the doping gas in the corresponding area, the flow rate of the doping gas in each area in the reaction cavity 3 can be controlled through each flow control module 41 according to the actual process requirements, so that the resistivity of the film formed on the surface of the substrate is consistent, and the resistivity uniformity of the product is improved.
Fig. 2 is a schematic structural view of the flow control module and the pressure stabilizing module disposed on the second gas transmission pipeline provided in the embodiment of the present invention, as shown in fig. 2, the flow control module 41 includes a first pneumatic valve 41 a.
Specifically, the second air pipe 4 is divided into two parts, one part is located between the first pneumatic valve 41a and the air inlet of the second air pipe 4, and the other part is located between the first pneumatic valve 41a and the air outlet of the second air pipe 4. When the first pneumatic valve 41a is opened, the two parts of the second air transmission pipeline 4 are communicated through the first pneumatic valve 41a, and when the first pneumatic valve 41a is closed, the two parts of the second air transmission pipeline 4 are disconnected by the first pneumatic valve 41 a. The flow rate of the dopant gas delivered from the second gas delivery pipe 4 to the first gas delivery pipe 2 can be controlled by adjusting the opening degree of the first pneumatic valve 41 a.
In some embodiments, the second gas transmission pipeline 4 is further provided with a pressure stabilizing module 43, and the pressure stabilizing module 43 is configured to adjust the pressure of the gas in the second gas transmission pipeline 4, so that the pressure of the gas in the second gas transmission pipeline 4 is the same.
In some embodiments, the second air delivery conduit 4 is further provided with an air outlet 42; the voltage stabilization module 43 includes: an exhaust line 44, a second air-operated valve 41b and a back pressure valve 41c provided on the exhaust line 44, with an air inlet of the exhaust line 44 communicating with an air outlet 42 of the second air pipe 4, and the second air-operated valve 41b provided between the back pressure valve 41c and the air inlet of the exhaust line 44.
Specifically, the exhaust line 44 includes an air outlet, the air outlet of the exhaust line 44 communicates with the outside, the air inlet of the second air-operated valve 41b communicates with the air outlet 42 of the second air line 4, the air outlet of the second air-operated valve 41b communicates with the air inlet of the back pressure valve 41c, and the air outlet of the back pressure valve 41c communicates with the air outlet of the exhaust line 44, so that the dopant gas passing through the exhaust line 44 is discharged out of the second air line 4.
To describe the operation of the flow control module 41 in this embodiment, first, the first pneumatic valve 41a on the second gas pipe 4 is closed, the second pneumatic valve 41b is opened, the doping gas flows to the back pressure valve 41c through the second pneumatic valve 41b, and the pressure of the back pressure valve 41c is adjusted to make the pressure and the flow rate of the doping gas in the second gas pipe 4 consistent everywhere and keep stable. Then, the second air-operated valve 41b is closed, and the first air-operated valve 41a is opened, so that the dopant gas is delivered to the first air delivery pipe 2 and is delivered to the air inlet chamber 12 corresponding to the first air delivery pipe 2 through the first air delivery pipe 2.
Fig. 3a and 3b are perspective views of two viewing angles of the cavity provided by the embodiment of the present invention, respectively, as shown in fig. 3a and 3b, the cavity 1 has an air inlet end face 11a facing the reaction chamber 3. The air outlets of the plurality of air inlet chambers 12 are horizontally arranged on the air inlet end surface 11 a. The plurality of intake chambers 12 includes an outer intake chamber 12b and an inner intake chamber 12 a. The gas outlets of the outer gas inlet cavity 12b are located at two ends of the gas inlet end surface 11a and are used for respectively conveying the process gas to the edge areas at two sides of the reaction cavity 3. The gas outlet of the inner inlet chamber 12a is located in the middle of the gas inlet end surface 11a for delivering the process gas to the middle region of the reaction chamber 3.
Fig. 4a is a front view of a cavity provided with a flow equalizing plate according to an embodiment of the present invention, fig. 4b is a cross-sectional view of fig. 4a along a sectional line AA 'provided by an embodiment of the present invention, and fig. 4c is a cross-sectional view of fig. 4b along a sectional line BB' provided by an embodiment of the present invention, as shown in fig. 4a to 4c, in some embodiments, a flow equalizing plate 11b is provided on an air inlet end surface 11a of the cavity 1.
A plurality of groups of vent holes 11c are arranged on the flow equalizing plate 11b, each group of vent holes 11c comprises a plurality of vent holes 11c, each air inlet cavity 12 corresponds to one group of vent holes 11c, the air inlet ends of the vent holes 11c are communicated with the corresponding air inlet cavities 12, and the air outlet ends of the vent holes 11c are communicated with the reaction cavity 3.
In some particular embodiments, the plurality of first air conduits 2 includes an inner zone air conduit 2a and an outer zone air conduit 2 b.
The cavity 1 is also formed with: an inner zone inlet channel 13 and an outer zone inlet channel 14. The inner zone air intake passage 13 is located below the inner zone air intake chamber 12a, and the air inlet of the inner zone air intake chamber 12a communicates with the air outlet of the inner zone air delivery pipe 2a through the inner zone air intake passage 13.
The outer zone air admission passage 14 is located above the outer zone air admission chamber 12b, and the air inlet of each outer zone air admission chamber 12b communicates with the air outlet of the outer zone air delivery conduit 22 through the outer zone air admission passage 14.
Specifically, the air inlet of the inner air inlet channel 13 extends vertically downward and is communicated with the air outlet of the corresponding inner air transmission pipeline 21. The outer zone air intake passage 14 comprises a first air delivery section 14a and a second air delivery section 14b, each of the first air delivery section 14a and the second air delivery section 14b having an air outlet and an air inlet. The air inlet of the first air transmission part 14a is communicated with the air inlet of the second air transmission part 14b to form an air inlet of an outer area air inlet channel 14, and the air inlet of the outer area air inlet channel 14 is positioned on one side of the cavity 1 departing from the air inlet end surface 11a and is communicated with the air outlet of the outer area air transmission pipeline 2 b. When the air inlet end surface 11a is perpendicular to the horizontal plane, the first air delivery part 14a and the second air delivery part 14b extend to two ends of the air inlet end surface 11a along the horizontal direction, respectively, and the air outlet of the first air delivery part 14a and the air outlet of the second air delivery part 14b extend vertically and downwards and are communicated with the corresponding outer air inlet cavity 21 b.
By adopting the gas inlet device provided by the embodiment, the flow rate of the doping gas in the middle area or the two side edge areas of the reaction chamber 3 is adjusted through the flow control module 41 corresponding to the middle area or the two side edge areas of the reaction chamber 3, so that the resistivity of each position of the film layer formed on the substrate can meet the process requirement. Meanwhile, other process gases (e.g., source gas and carrier gas) in the first gas transmission pipeline 2 still maintain the previous flow rate, so that other parameters in the process are not affected, and the process is facilitated.
This embodiment still provides a reaction chamber, and fig. 5 is the structure schematic diagram of the reaction chamber that the embodiment of the utility model provides, as shown in fig. 5, this reaction chamber includes: a reaction chamber 3 and an air inlet device 7 arranged at one side of the reaction chamber 3. The air intake device 7 adopts the air intake device provided in the above embodiment.
In some embodiments, a susceptor 5 is disposed in the reaction chamber 3, and the susceptor 5 is used for carrying a substrate. The reaction chamber further comprises an air outlet mechanism 6 arranged on one side of the reaction chamber 3, which is far away from the chamber 1, wherein the process gas enters the reaction chamber 3 through the chamber 1, flows horizontally on the surface of the base 5, and then is discharged out of the reaction chamber 3 through the air outlet mechanism 6. The base 5 can be connected with a driving device, so that the base can rotate under the driving of the driving device, process gas can uniformly pass through all positions on the surface of the substrate, and the uniformity of film formation on the substrate is improved.
The embodiment also provides semiconductor processing equipment comprising the reaction chamber provided by the embodiment.
In the reaction chamber and the semiconductor processing equipment of the embodiment, the flow rates of the doping gases in the three regions of the reaction chamber can be adjusted through the gas inlet device 7, so that the resistivity of the film formed on the surface of the substrate is consistent, and the resistivity uniformity of the product is improved.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. The gas inlet device is used for conveying process gases to a reaction cavity in semiconductor processing equipment, wherein the process gases comprise source gases and doping gases; the air intake device includes: the air inlet pipeline comprises a cavity and a plurality of first air transmission pipelines, wherein a plurality of air inlet cavities are formed in the cavity, and each air inlet cavity is provided with an air inlet and an air outlet; it is characterized in that the preparation method is characterized in that,
every all be provided with the second gas transmission pipeline on the first gas transmission pipeline, wherein:
each first gas transmission pipeline is provided with a first gas inlet, a second gas inlet and a first gas outlet, the first gas outlet is communicated with the gas inlet of at least one gas inlet cavity, the first gas inlet is communicated with the gas outlet of the second gas transmission pipeline, the second gas inlet is communicated with a first gas source for providing source gas, and the gas inlet of the second gas transmission pipeline is communicated with a second gas source for providing doping gas;
and the second gas transmission pipeline is provided with a flow control module, and the flow control module is used for controlling the flow of the doping gas transmitted by the second gas transmission pipeline.
2. The air intake apparatus of claim 1, wherein the flow control module comprises a first pneumatic valve.
3. The air inlet device as claimed in claim 1, wherein a pressure stabilizing module is further disposed on the second air transmission pipeline, and the pressure stabilizing module is used for adjusting the pressure of the air in the second air transmission pipeline so that the air pressure in the second air transmission pipeline is consistent.
4. An air intake apparatus according to claim 3,
the second gas transmission pipeline is also provided with a gas outlet;
the voltage stabilization module includes: exhaust pipe, setting are in second pneumatic valve and back pressure valve on the exhaust pipe, just the air inlet of exhaust pipe with the gas vent intercommunication of second gas transmission pipeline, the second pneumatic valve sets up the back pressure valve with between the air inlet of exhaust pipe.
5. The air intake apparatus of claim 1, wherein the cavity has an air intake end face facing the reaction chamber; the air outlets of the air inlet cavities are horizontally arranged on the air inlet end surface;
the plurality of intake chambers includes: an outer zone air intake cavity and an inner zone air intake cavity; the gas outlets of the gas inlet cavity of the outer zone are positioned at two ends of the gas inlet end surface and are used for respectively conveying process gas to the edge areas at two sides of the reaction cavity;
and the gas outlet of the inner area gas inlet cavity is positioned in the middle of the gas inlet end surface and is used for conveying process gas to the middle area of the reaction cavity.
6. The air inlet device according to claim 5, characterized in that the air inlet end surface of the cavity is provided with a flow equalizing plate;
the flow equalizing plate is provided with a plurality of groups of vent holes, each group of vent holes comprises a plurality of vent holes, each air inlet cavity corresponds to one group of vent holes, the air inlet ends of the vent holes are communicated with the corresponding air inlet cavities, and the air outlet ends of the vent holes are communicated with the reaction cavity.
7. The air intake apparatus of claim 5, wherein the first plurality of air delivery conduits comprises: an inner zone gas transmission pipeline and an outer zone gas transmission pipeline;
the cavity is also formed with: the air inlet of the inner area air inlet cavity is communicated with the air outlet of the inner area air conveying pipeline through the inner area air inlet channel;
the outer zone air inlet channel is positioned above the outer zone air inlet cavity, and the air inlet of each outer zone air inlet cavity is communicated with the air outlet of the outer zone air conveying pipeline through the outer zone air inlet channel.
8. A reaction chamber, comprising: the reaction chamber and the air inlet device are arranged on one side of the reaction chamber; the air intake device employs the air intake device as claimed in any one of claims 1 to 7.
9. The reaction chamber of claim 8, wherein a susceptor is disposed in the reaction chamber, and the susceptor is used for carrying a substrate; the base can rotate under the drive of the drive device.
10. A semiconductor processing apparatus comprising the reaction chamber of claim 8 or 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922221785.6U CN211311577U (en) | 2019-12-12 | 2019-12-12 | Air inlet device, reaction chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922221785.6U CN211311577U (en) | 2019-12-12 | 2019-12-12 | Air inlet device, reaction chamber and semiconductor processing equipment |
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| Publication Number | Publication Date |
|---|---|
| CN211311577U true CN211311577U (en) | 2020-08-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922221785.6U Active CN211311577U (en) | 2019-12-12 | 2019-12-12 | Air inlet device, reaction chamber and semiconductor processing equipment |
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| Country | Link |
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| CN (1) | CN211311577U (en) |
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