CN211295134U

CN211295134U - LED device

Info

Publication number: CN211295134U
Application number: CN202020074391.2U
Authority: CN
Inventors: 雷美琴; 李军政; 李友民; 朱明军; 刘慧娟; 陆紫珊; 郑银玲; 张雪
Original assignee: Foshan NationStar Optoelectronics Co Ltd
Current assignee: Foshan NationStar Optoelectronics Co Ltd
Priority date: 2020-01-14
Filing date: 2020-01-14
Publication date: 2020-08-18
Anticipated expiration: 2030-01-14

Abstract

The utility model discloses a LED device, which comprises a LED device main body and a surface packaging layer; the LED device main body comprises a substrate, a chip and a packaging colloid; the chip is arranged on the substrate, the packaging colloid is arranged on the substrate and covers the chip; the surface packaging layer is arranged on the surface of the LED device main body and at least covers part of the side wall of the packaging colloid. The surface packaging layer is arranged on the side face of the packaging colloid of the LED device, and the surface packaging layer is utilized to improve the smoothness of the side wall of the packaging colloid, so that the effect of increasing the transparency and the light emitting efficiency of the side wall of the packaging colloid is achieved, and the LED device has good practicability.

Description

LED device

Technical Field

The utility model relates to a LED device field, concretely designs to LED device.

Background

Fig. 1 shows a schematic diagram of an LED device array structure in the prior art, illustrating the LED device array structure before being cut into LED devices.

Specifically, the LED device array 1 includes a substrate layer 101 and an encapsulation layer 102, a plurality of chips 202 are arranged on the substrate layer 101 in an array manner, then the encapsulation layer 102 is formed on the substrate layer 101 in an integral injection molding manner, and all the chips 202 are covered by the encapsulation layer 102. It should be noted that, since the encapsulation layer 102 is formed by injection molding, the top surface of the encapsulation layer 102 is smooth, and the roughness value Ra is usually below 0.1 μm.

In subsequent operations, the LED device array needs to be cut (the shaded area 204 shown in fig. 1 of the drawings) by the blade 205 according to a preset track (based on a common LED device array structure, the preset track is usually a plurality of transverse tracks and a plurality of longitudinal tracks in a top view direction, and the LED device array structure shown in fig. 1 is a front view direction), so as to separate the LED device array into a plurality of LED devices, where each LED device includes an independent substrate 201, a chip 202, and an encapsulant 203.

In the LED device obtained by the above processing method, since the side surface of the encapsulant 203 of the LED device is formed by cutting, the side surface of the encapsulant 203 has high roughness and poor transparency, and light emitted from the chip 202 is lost due to reflection and irregular scattering at the side surface of the rough encapsulant, which results in a decrease in light extraction rate of the LED device.

SUMMERY OF THE UTILITY MODEL

In order to solve the higher problem of roughness of the encapsulation colloid side of the LED device based on cutting mode production, the utility model discloses implement and provide a LED device, this LED device sets up the surface packaging layer on the encapsulation colloid side, utilizes the surface packaging layer to improve the smooth finish and the transparency of encapsulation colloid lateral wall to realize increasing the effect of encapsulation colloid lateral wall light-emitting efficiency, have good practicality.

Correspondingly, the utility model provides a LED device, which comprises a LED device main body and a surface packaging layer;

the LED device main body comprises a substrate, a chip and a packaging colloid; the chip is arranged on the substrate, the packaging colloid is arranged on the substrate and covers the chip;

the surface packaging layer is arranged on the surface of the LED device main body and at least covers part of the side wall of the packaging colloid.

In an alternative embodiment, the LED device body further comprises a light reflecting layer;

the light reflecting layer is arranged on the top surface of the packaging colloid.

In an optional embodiment, the light transmittance of the light reflective layer is greater than or equal to 50%, and the light transmittance of the light reflective layer is less than or equal to 90%.

In an alternative embodiment, the color of the surface encapsulation layer is the same as the color of the encapsulant.

In an alternative embodiment, the material of the surface encapsulation layer is the same as the material of the encapsulant.

In an optional embodiment, the light transmittance of the surface encapsulation layer is greater than or equal to 95%.

In an alternative embodiment, the thickness of the surface encapsulation layer ranges from [4 μm,6 μm ].

In an alternative embodiment, the surface encapsulation layer covers all sidewalls of the encapsulant and/or at least a portion of the side surfaces of the substrate.

In an alternative embodiment, the Ra value of at least a portion of the side surface of the encapsulant is 3.2 μm or greater.

In an alternative embodiment, the surface Ra value of the surface encapsulation layer is less than or equal to 0.025 μm.

The utility model provides a LED device, this LED device are through setting up the surface package layer outside the packaging colloid at LED device body to improve the lateral wall smooth finish on surface package layer, reduced reflection and the random scattering that light takes place at the packaging colloid lateral wall, improved the luminousness of LED device body, increase luminous luminance has good practicality.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 shows a schematic diagram of a prior art LED device array structure;

fig. 2 shows a perspective view of a three-dimensional structure of an LED device according to an embodiment of the present invention;

fig. 3 shows a front view structure perspective view of an LED device according to an embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.

Fig. 2 shows a perspective view of a three-dimensional structure of a LED device according to an embodiment of the present invention, and fig. 3 shows a perspective view of a front view structure of a LED device according to an embodiment of the present invention.

The utility model discloses LED device includes LED device main part and surface packaging layer 305.

The LED device body comprises a substrate 301, a chip 302 and a packaging colloid 303. Specifically, a chip 302 is disposed on the substrate 301, and a molding compound 303 is disposed on the substrate 301 and encapsulates the chip 302. Specifically, the LED device is formed by cutting an LED device array (such as the LED device array described in the background of the invention), the top surface of the encapsulant 303 is smooth (with a small Ra value), and the side wall is rough (with a large Ra value). Because the side wall of the packaging colloid is rough and the transparency is poor, the light emitted by the LED device main body is lost due to reflection and irregular scattering on the side wall of the rough packaging colloid, the transparency is poor, and the light-emitting rate is reduced. Typically, the Ra value of the side walls of the encapsulant 303 is greater than or equal to 3.2 μm, and if the Ra value of the side walls of the encapsulant 303 needs to be reduced, the requirements for cutting equipment will be greatly increased, increasing the cost of the equipment.

In order to increase transparency and smoothness of the side wall of the encapsulant 303, the embodiment of the utility model provides a set up one deck surface packaging layer 305 just on the surface of the LED device main part surface packaging layer 305 covers at least the partial side wall of encapsulant 303, preferably, in this embodiment, surface packaging layer 305 is formed after the solidification of the glue the same with the encapsulant colour, the material is the same, utilizes the mobility of glue and the smoothness of glue at surface tension effect lower surface, makes the Ra value of the surface on the position that the LED device corresponds encapsulant 303 lateral wall reduce, and the smoothness increases to improve the light-emitting efficiency of LED device.

Tests show that the surface Ra value of the surface packaging layer 305 is less than or equal to 0.025 mu m, and is equivalent to the roughness of the top surface of an LED device formed by a mold.

Specifically, the surface encapsulation layer 305 is formed by curing a transparent glue, and may be processed by a processing method such as coating during specific processing. Optionally, in view of processing convenience, the cut LED device may be directly immersed in transparent glue (partially immersed to avoid affecting the conductivity of the LED device pins) upside down and then taken out, and the required surface encapsulation layer 305 is formed by using the transparent glue on the surface of the LED device, or the transparent glue is coated on the whole sidewall of the LED device body, so as to form a surface encapsulation layer covering all sidewalls of the LED device body, that is, the surface encapsulation layer 305 may cover the remaining surface of the encapsulant 303 and/or at least a part of the side surface of the cover substrate 301 on the basis of covering the sidewall of the encapsulant.

Optionally, the color of the surface encapsulation layer 305 is the same as the color of the encapsulant 303, so as to avoid affecting the display color of the original LED device; it should be noted that the surface encapsulation layer 305 of the embodiment of the invention is applicable to LED devices in most existing structures, and has good applicability.

Optionally, the material or base material of the surface encapsulation layer 305 is the same as the material of the encapsulant 303 to ensure bondability and optical connectivity between the surface encapsulation layer 305 and the encapsulant 303.

Optionally, the surface encapsulation layer 305 is made of silicone, and the light transmittance of the surface encapsulation layer is greater than or equal to 95%.

In a specific implementation, in order to achieve both the manufacturing cost and the operation effect, optionally, the thickness range of the surface encapsulation layer 305 is [4 μm,6 μm ]. Within the thickness range, the surface encapsulation layer 305 can achieve an ideal light processing effect, and has a low material cost and a certain economic benefit.

Further, since the embodiment of the present invention realizes the function of enhancing the side light emission of the encapsulant 303 by disposing the surface encapsulation layer 305, the embodiment of disposing the surface encapsulation layer 305 can also be applied to the LED device body having the light reflection layer 304.

Specifically, the LED device body further includes a light reflecting layer 304, and the light reflecting layer 304 is disposed on the top surface of the encapsulant 303. The light reflecting layer 304 is made of a light reflecting material, such as silver, and can reflect part of light rays emitted by the chip 302 to the light reflecting layer 304 to the packaging colloid 303, so that the light rays are emitted from the side surface of the packaging colloid 303, optionally, the light transmittance of the light reflecting layer is greater than or equal to 50% and less than or equal to 90%, the top light emitting effect and the side light emitting effect of the LED device can be adjusted by adjusting the light transmittance of the light reflecting layer, and the light emitting balance of the LED device is enhanced.

To sum up, the embodiment of the utility model provides a LED device, this LED device is through setting up the surface package layer outside the encapsulation colloid at LED device body to improve the lateral wall smooth finish on surface package layer, reduced reflection and the random scattering that light takes place at the encapsulation colloid lateral wall, improved the luminousness of LED device body, increase luminous luminance, improved light-emitting efficiency, had good practicality.

The above detailed description is made on an LED device provided by the embodiments of the present invention, and the principle and the implementation of the present invention are explained by applying specific examples, and the above description of the embodiments is only used to help understanding the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the specific implementation and application scope, to sum up, the content of the present specification should not be understood as the limitation of the present invention.

Claims

1. An LED device, comprising an LED device body and a surface encapsulation layer;

2. The LED device of claim 1, wherein the LED device body further comprises a light reflecting layer;

3. The LED device according to claim 2, wherein a light transmittance of the light reflection layer is 50% or more and a light transmittance of the light reflection layer is 90% or less.

4. The LED device of claim 1, wherein the surface encapsulant layer is the same color as the encapsulant.

5. The LED device of claim 1, wherein the surface encapsulant layer is the same material as the encapsulant.

6. The LED device of claim 1, wherein the surface encapsulation layer has a light transmittance of 95% or greater.

7. The LED device of claim 1, wherein the surface encapsulation layer has a thickness range of [4 μ ι η,6 μ ι η ].

8. The LED device of claim 1, wherein the surface encapsulation layer covers all sidewalls of the encapsulant and/or at least portions of the sides of the substrate.

9. The LED device of claim 1, wherein at least a portion of the side surfaces of the encapsulant have an Ra value of 3.2 μ ι η or greater.

10. The LED device according to any one of claims 1 to 9, wherein the surface Ra value of the surface encapsulation layer is 0.025 μm or less.