CN211126085U - Electromagnetic wave absorber structure - Google Patents
Electromagnetic wave absorber structure Download PDFInfo
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- CN211126085U CN211126085U CN202020155925.4U CN202020155925U CN211126085U CN 211126085 U CN211126085 U CN 211126085U CN 202020155925 U CN202020155925 U CN 202020155925U CN 211126085 U CN211126085 U CN 211126085U
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Abstract
The utility model provides an electromagnetic wave absorber structure, including bottom sheet metal unit, upper dielectric substrate unit and the foam blanket of setting between bottom sheet metal unit and upper dielectric substrate unit, the upper surface and the lower surface of upper dielectric substrate unit are the metal unit, and the upper surface and the lower surface of upper dielectric substrate unit are equallyd divide and do not are provided with first metal strip and second metal strip. The utility model discloses an electromagnetic wave absorber structure can realize that the broadband is inhaled ripples, the wave and the insensitive characteristic of polarization are inhaled to the wide-angle, guarantees the miniaturization of structure itself simultaneously, can be used to aspects such as microwave detection, antenna stealth.
Description
Technical Field
The invention belongs to the technical field of electromagnetic wave absorbers, and particularly relates to a low-profile ultra-wideband electromagnetic wave absorber structure.
Background
In the field of communications, electromagnetic wave absorbers are widely used due to their excellent filtering characteristics, such as improving electromagnetic compatibility of integrated circuits, eliminating electromagnetic interference in complex environments, and in chipless radio frequency identification technology. At present, most of the application scenarios of electromagnetic wave absorbers require large bandwidth and low profile, and Radar Cross Section (RCS) reduction of at least 10dB, which limits the widespread use of traditional electromagnetic wave absorbers, such as Salisbury structures and multilayer Jaumann structures.
The circuit analog absorber is an effective method for reducing RCS, and it can reduce RCS in a wide frequency band by matching the impedance characteristics of the dielectric plate with the resonant circuit, but this tends to result in a large volume.
In addition, the 3D structure is also used to achieve bandwidth broadening and thickness reduction, but the complexity of processing and the single polarization characteristics are not well solved.
Published in IEEE at 8.2000 in the 48 th paper, website:
https://ieeexplore.ieee.org/document/884491professor Rozanov, russian academy of science, teaches that for a non-magnetic electromagnetic wave absorber, there is a theoretical physical limit for a given absorption performance, and how to approach this physical limit remains a great challenge.
Therefore, there is a need to develop a new electromagnetic wave absorber structure, which can realize broadband wave absorption, large-angle wave absorption and polarization insensitivity, and ensure the miniaturization of the electromagnetic wave absorber structure itself.
Disclosure of Invention
In order to solve the above problems, the present invention provides a low-profile ultra-wideband electromagnetic wave absorber capable of achieving a reduction in RCS within a wider operating frequency band while ensuring a smaller thickness of the electromagnetic wave absorber, thereby facilitating its wide application in national defense and commercial systems.
The technical scheme for realizing the invention is as follows:
an electromagnetic wave absorber structure comprises a bottom metal plate unit, an upper medium substrate unit and a foam layer arranged between the bottom metal plate unit and the upper medium substrate unit, wherein the upper surface and the lower surface of the upper medium substrate unit are both metal units, and the upper surface and the lower surface of the upper medium substrate unit are respectively provided with a first metal strip and a second metal strip;
furthermore, even numbers of chip resistors are respectively arranged on the first metal strip and the second metal strip on the upper surface and the first metal strip and the second metal strip on the lower surface of the upper-layer dielectric substrate unit, and the chip resistors are respectively symmetrical with the centers of the first metal strip and the second metal strip.
Furthermore, the bottom metal plate unit and the upper dielectric substrate unit are rectangular.
Furthermore, the first metal strips are arranged along the diagonal of the upper surface of the upper-layer medium substrate unit, and the second metal strips are arranged on the side surfaces of the first metal strips in parallel.
Furthermore, the number of the second metal strips is two, and the two second metal strips are respectively arranged on two sides of the first metal strip in parallel.
Further, the lower surface metal unit of the upper medium substrate unit is obtained by horizontally rotating the upper surface metal unit of the upper medium substrate unit by 90 °.
Furthermore, the upper dielectric substrate unit is made of FR4 epoxy glass cloth laminated board material with the dielectric constant of 4.4 and the loss tangent value of 0.02.
Furthermore, a metal plate is arranged below the upper-layer medium substrate unit, and the distance between the metal plate and the lower surface of the upper-layer medium substrate unit is 8 mm.
Furthermore, the metal unit and the metal plate are made of conductive metal materials.
Furthermore, the width of the first metal strip and the width of the second metal strip are both 0.5mm, the length of the first metal strip is 27mm, the length of the second metal strip is 9.5mm, and the vertical distance between the first metal strip and the second metal strip is 8 mm.
Further, the distance between the end faces of the chip resistors of the first metal strip is 1.5mm, the resistance value is 120 Ω, the distance between the end faces of the chip resistors of the second metal strip is 2.5mm, and the resistance value is 70 Ω.
The absorber structure can realize the characteristics of broadband wave absorption, large-angle wave absorption and polarization insensitivity, simultaneously ensures the miniaturization of the structure, and can be used for microwave detection, antenna stealth and other aspects.
Drawings
Fig. 1 is a unit structural view of an electromagnetic wave absorber of the present invention.
Fig. 2 is a dimension diagram of a metal structure on an upper dielectric substrate.
FIG. 3 is a frequency response characteristic diagram of a reflection coefficient of an electromagnetic wave absorber according to the present invention.
Detailed Description
Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, and while the invention will be described in connection with the preferred embodiments, it will be understood by those skilled in the art that these embodiments are not intended to limit the invention to these embodiments, but on the contrary, the invention is intended to cover alternatives, modifications and equivalents, which may be included within the spirit and scope of the invention as defined by the appended claims. Furthermore, in the following detailed description of the present invention, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, it will be apparent to those skilled in the art that the present invention may be practiced without these specific details.
Referring to fig. 1, fig. 1 is a unit structure view of an electromagnetic wave absorber of the present invention, which is composed of three layers, and a side length p of a bottom layer metal plate unit 5 is 20 mm. The upper layer is an upper layer medium substrate unit 1 with the thickness t of 0.5mm, and the upper surface and the lower surface of the upper layer medium substrate unit 1 are respectively plated with metal strips 3 with different lengths and welded with two chip resistors 2; the middle layer is a foam layer 4 with a thickness h of 8mm to support the entire structure.
The invention discloses a low-profile ultra-wideband electromagnetic wave absorber structure, which comprises a plurality of square bottom metal plate units 5 which are arranged in a rectangular period, an upper dielectric substrate unit 1 and a foam layer 4 arranged between the bottom metal plate units 5 and the upper dielectric substrate unit 1, wherein the foam layer 4 is used for supporting the bottom metal plate units 5 and the upper dielectric substrate unit 1 to jointly form the electromagnetic wave absorber structure.
The upper surface and the lower surface of the upper-layer dielectric substrate unit 1 are both metal units, the metal units on the upper surface of the upper-layer dielectric substrate unit 1 include a first metal strip m1 arranged along a diagonal line and two second metal strips m2 arranged in parallel on two sides of the metal strip, the metal units on the lower surface of the upper-layer dielectric substrate unit 1 are obtained by horizontally rotating the metal units on the upper surface of the upper-layer dielectric substrate unit 1 by 90 degrees, two chip resistors are respectively welded on the first metal strip m1 and the second metal strip m2, the chip resistors are respectively and symmetrically arranged by the centers of the first metal strip m1 and the second metal strip m2, and a person skilled in the art can understand that the number of the chip resistors can be even, and the even chip resistors are respectively and symmetrically arranged by the centers of the first metal strip and the second metal strip. A metal plate is arranged below the upper-layer medium substrate unit 1, the distance between the metal plate and the lower surface of the upper-layer medium substrate unit 1 is 8mm, and the metal unit and the metal plate can be made of conductive metal materials such as copper and iron.
The upper dielectric substrate unit 1 is made of FR4 epoxy glass cloth laminated board material with dielectric constant of 4.4 and loss tangent value of 0.02.
Fig. 2 is a dimension diagram of a metal structure on an upper dielectric substrate 1, wherein the metal strips 3 have two lengths, namely a first longer metal strip m1 and a second shorter metal strip m2, the widths of the metal strips 3 of the two lengths are w ═ 0.5mm, and the length l of the first metal strip m11Length l of the second metal strip m2, 27mm2The perpendicular distance d between the first metal strip m1 and the second metal strip m2 is 8mm, and the distance between the end faces of the two chip resistors welded on the first metal strip m1 is d11.5mm, resistance R1The distance between the two chip resistor end faces welded on the second metal strip m2 is d & lt 120 & gtomega22.5mm, resistance R2＝70Ω。
As shown in fig. 3, the working principle of the structure of the wave absorber is as follows: by using multimode resonance on metal strips welded with chip resistors with different lengths, a plurality of absorption peaks are constructed and passThe parameters are adjusted so that the absorption peaks cooperate with each other to form a wide absorption band. For the first longer strip m1, there are two different resonant modes, the fundamental mode and the first odd mode, respectively, with frequencies f1And f2At least one of (1) and (b); and for the second metal strip m2 with short length on two sides, the resonant mode is the fundamental mode, and the frequency is f3At, by controlling the lengths of the first and second metal strips m1 and m2, three resonance modes are respectively located at f1＝3.64GHz，f28.32GHz and f3At 12.96GHz, a broadband absorber is obtained.
The electromagnetic wave absorber of the present invention has the following practical test performance:
when the working frequency is 3 GHz-14 GHz, the bandwidth of the absorption frequency band is 11GHz, the relative bandwidth is 129.4%, the absorption rate in the frequency band exceeds 90%, and the Razonov limit of the electromagnetic wave absorber is 7.5mm, while the actual total thickness is 8.5mm, which is only 13% thicker, compared with the electrical size corresponding to the wavelength at the lowest frequency of the absorption band, which is 3GHz, which is 0.085 times of the wavelength, the Razonov limit is obtained by calculation, and the actual application scene is better satisfied.
Compared with the prior art, the invention has the following remarkable advantages: by using a simple structure, namely multimode resonance on the metal strip embedded with two resistors, an ultra-wide absorption frequency band is effectively constructed, and the relative bandwidth reaches 129.4%. In addition, the working frequency band and the bandwidth of the absorber can be adjusted by simply adjusting the size of the structure, meanwhile, the minimum thickness of the electromagnetic wave absorber can reach 0.085 times of wavelength, and compared with the performance of the existing electromagnetic wave absorber, the electromagnetic wave absorber has obvious improvement on the bandwidth and the thickness.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (11)
1. The utility model provides an electromagnetic wave absorber structure, its characterized in that includes bottom sheet metal unit, upper dielectric substrate unit and sets up the foam blanket between bottom sheet metal unit and upper dielectric substrate unit, and the upper surface and the lower surface of upper dielectric substrate unit are the metal unit, and the upper surface and the lower surface of upper dielectric substrate unit are equallyd divide and are provided with first metal strip and second metal strip respectively.
2. The electromagnetic wave absorber structure of claim 1, wherein the first metal strip and the second metal strip on the upper surface and the first metal strip and the second metal strip on the lower surface of the upper dielectric substrate unit are respectively provided with an even number of chip resistors, and the chip resistors are respectively symmetrical about the centers of the first metal strip and the second metal strip.
3. An electromagnetic wave absorber structure as claimed in claim 1, wherein said bottom metal plate element and said upper dielectric base element are rectangular.
4. The electromagnetic wave absorber structure of claim 1, wherein the first metal strips are arranged along diagonal lines of the upper surface of the upper-layer dielectric substrate unit, and the second metal strips are arranged in parallel on the side surfaces of the first metal strips.
5. An electromagnetic wave absorber structure as claimed in claim 4, wherein the number of the second metal strips is two, and the second metal strips are respectively disposed in parallel on both sides of the first metal strip.
6. The electromagnetic wave absorber structure of claim 1, wherein the lower-surface metal unit of the upper-layer dielectric base unit is horizontally rotated by 90 ° from the upper-surface metal unit of the upper-layer dielectric base unit.
7. An electromagnetic wave absorber structure as claimed in claim 1, wherein said upper dielectric substrate unit is made of FR4 epoxy glass cloth laminate material having a dielectric constant of 4.4 and a loss tangent of 0.02.
8. An electromagnetic wave absorber structure as claimed in claim 1, wherein a metal plate is further provided below said upper dielectric base unit, and the distance between the metal plate and the lower surface of the upper dielectric base unit is 8 mm.
9. An electromagnetic wave absorber structure as set forth in claim 1, wherein said metal elements and said metal plate elements are made of a conductive metal material.
10. An electromagnetic wave absorber structure as claimed in claim 1, wherein the first metal strip and the second metal strip each have a width of 0.5mm, the first metal strip has a length of 27mm, the second metal strip has a length of 9.5mm, and the vertical distance between the first metal strip and the second metal strip is 8 mm.
11. The electromagnetic wave absorber structure of claim 1, wherein the distance between the chip resistor end surfaces of the first metal strips is 1.5mm and the resistance value is 120 Ω, and the distance between the chip resistor end surfaces of the second metal strips is 2.5mm and the resistance value is 70 Ω.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020155925.4U CN211126085U (en) | 2020-02-08 | 2020-02-08 | Electromagnetic wave absorber structure |
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| CN202020155925.4U CN211126085U (en) | 2020-02-08 | 2020-02-08 | Electromagnetic wave absorber structure |
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