CN211125633U - Chip surface connecting system and power module system - Google Patents
Chip surface connecting system and power module system Download PDFInfo
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- CN211125633U CN211125633U CN201922492077.6U CN201922492077U CN211125633U CN 211125633 U CN211125633 U CN 211125633U CN 201922492077 U CN201922492077 U CN 201922492077U CN 211125633 U CN211125633 U CN 211125633U
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Abstract
The utility model relates to a chip surface connected system and power module system, pressfitting first connecting piece and second connecting piece to heat the first metal sintering agent between first connecting piece and second connecting piece, so that form first metal sintering articulamentum between first connecting piece and second connecting piece. Based on this, form stable connection layer between first connecting piece and second connecting piece, be favorable to improving current-carrying capacity and heat conductivity, simultaneously, the accessible chooses for use the first metal particle that the melting point is higher than the melting point of tin, improves the restriction operating temperature value of chip.
Description
Technical Field
The utility model relates to a chip technology field especially relates to a chip surface connected system and power module system.
Background
A chip is a way to miniaturize a circuit, and the miniaturized circuit is packaged in a chip housing and widely used in various circuit systems. With the development of chip integration, the number of chips which can be configured by a circuit system per unit area is gradually increased. Therefore, the way the chip is mounted on the surface has a significant impact on the performance of the circuitry.
The traditional chip surface connection methods mainly include the following two methods: firstly, the copper wire or the aluminum wire is bonded; and secondly, forming a welding layer for surface connection by re-melting the solder paste or the soldering lug at high temperature. However, the chip surface connection method by copper wire or aluminum wire bonding has small current carrying capacity and low thermal conductivity; the chip surface connection mode of forming the welding layer by the solder paste or the soldering lug has high requirement on void ratio, and the working temperature of the chip is easily limited, namely the working temperature of the chip cannot be higher than the melting point of the solder paste or the soldering lug.
In summary, the conventional chip surface connection method has the above drawbacks.
SUMMERY OF THE UTILITY MODEL
In view of the above, it is necessary to provide a chip surface connection system and a power module system for overcoming the defects of the conventional chip surface connection method.
A chip surface attachment system comprising:
the first connecting piece comprises a first connecting piece body and a first metal layer plated on the first connecting piece body; wherein the first metal plated layer is composed of second metal particles sintered on one side of the first connector body;
a second connector comprising a second connector body and a plated second metal layer disposed on the second connector body; wherein the plated second metal layer is composed of third metal particles sintered on one side of the second connector body;
and the first metal plating layer is connected with the second metal plating layer through a first metal sintering connecting layer.
In the chip surface connecting system, the first metal plating layer of the first connecting piece is connected with the first metal plating layer of the second connecting piece through the second metal sintering connecting layer. Because the first metal plated layer is formed by sintering the second metal particles and the second metal plated layer is formed by sintering the third metal particles, the first metal sintered connecting layer is more stable. Based on this, be favorable to improving current-carrying capacity and heat conductivity, simultaneously, the accessible selects for use the melting point first metal particle, second metal particle and the third metal particle that the melting point is higher than tin, improves the restriction operating temperature value of chip.
In one embodiment, the second metal particles comprise silver particles or copper particles.
In one embodiment, the second metal particles comprise nano-silver particles.
In one embodiment, the second metal particles comprise nano-copper particles.
In one embodiment, the third metal particles comprise silver particles or copper particles.
In one embodiment, the third metal particles comprise nano-silver particles.
In one embodiment, the third metal particles comprise nano-copper particles.
In one embodiment, the second metal particles are metal particles made of the same material as the first metal particles.
In one embodiment, the second metal particles are metal particles made of the same material as the third metal particles.
In one embodiment, the third metal particles are metal particles made of the same material as the first metal particles.
In one embodiment, the second metal particles are metal particles made of the same material as the first metal particles and the third metal particles.
A power module system comprises a bottom plate and an IGBT power module;
the bottom plate comprises a bottom plate body and a first metal layer plated on the bottom plate body; wherein the plated first metal layer is composed of second metal particles sintered on one side of the base plate body;
the IGBT power module comprises an IGBT power module body and a second metal layer arranged on the IGBT power module body; the second metal layer is formed by third metal particles sintered on one side of the IGBT power module body;
and the first metal plating layer is connected with the second metal plating layer through a first metal sintering connecting layer.
In the power module system, the first metal plating layer of the bottom plate is connected with the second metal plating layer of the IGBT power module through the first metal sintering connecting layer. Because the first metal plated layer is formed by sintering the second metal particles and the second metal plated layer is formed by sintering the third metal particles, the first metal sintered connecting layer is more stable. Based on this, be favorable to improving current-carrying capacity and heat conductivity, simultaneously, the accessible selects for use the melting point first metal particle, second metal particle and the third metal particle that the melting point is higher than tin, improves IGBT power module's restriction operating temperature value.
In one embodiment, the IGBT power module body includes a mold package, a power terminal, and a signal terminal;
the second metal plating layer is arranged on one side of the mold sealing body.
Drawings
FIG. 1 is a block diagram of a chip surface mount system according to one embodiment;
FIG. 2 is a schematic diagram of a first metal sintering joint layer forming process;
FIG. 3 is a schematic diagram of a power module system according to an embodiment;
fig. 4 is a schematic structural diagram of an IGBT power module according to an embodiment.
Detailed Description
For better understanding of the objects, technical solutions and technical effects of the present invention, the present invention will be further explained with reference to the accompanying drawings and embodiments. It is to be noted that the following examples are only for explaining the present invention and are not intended to limit the present invention.
The embodiment of the utility model provides a still provide a chip surface connecting system.
Fig. 1 is a block diagram of a chip surface connection system according to an embodiment, and as shown in fig. 1, the chip surface connection system according to an embodiment includes:
the first connecting piece comprises a first connecting piece body 100 and a first metal layer 101 plated on the first connecting piece body 100; wherein the first metal layer 101 consists of second metal particles sintered on one side of the first connector body 100;
a second connector including a second connector body 200 and a second metal layer 201 plated on the second connector body 200; wherein the second metal layer 201 is composed of third metal particles sintered on one side of the second connector body 200;
wherein, the first metal layer 101 and the second metal layer 201 are connected by a first metal sintering connection layer 300.
The first metal sintered connection layer 300 is formed by sintering first metal particles.
Fig. 2 is a schematic diagram of a first metal sintering connection layer forming process, and as shown in fig. 2, a first metal sintering solvent is coated between the metal frame and the chip, and the first metal sintering solvent includes an organic solvent and first metal particles. The metal frame and the chip are pressed through external pressure, the first metal sintering solvent is heated and is kept warm for a period of time, so that the organic solvent is volatilized and ablated, a first metal sintering connecting layer 300 with a small amount of micro spaces is formed among the first metal particles through mutual diffusion, and meanwhile, the first metal particles, the metal frame and the chip are subjected to metallurgical reaction to form a bonding interface.
As shown in fig. 1, the first metal sintered layer 300 is formed by the chip surface connection method according to the above-described embodiment. Since the first metal layer 101 is composed of the second metal particles and the second metal layer 201 is composed of the third metal particles, the metallurgical reaction of the first metal sintered layer 300 is facilitated, and the connection stability between the first metal layer 101 and the second metal layer 201 is improved.
In one embodiment, the second metal particles can be selected to have a melting point higher than that of the solder paste or pad. In one embodiment, the second metal particles are copper particles or silver particles. As one of the preferred embodiments, the second metal particles are nano-copper particles. As another preferred embodiment, the second metal particles are silver nanoparticles.
After the copper particles or the silver particles are selected, the melting point of the second metal particles is obviously higher than that of the solder paste or the soldering lug. The melting point of the first metal layer 101 formed based on the second metal particles is higher than that of solder paste or solder pads, so that the working temperature limit of the chip is increased, and the first metal layer 101 is prevented from being melted by the heat generated by the chip.
In one embodiment, the third metal particles can be selected to have a melting point higher than that of the solder paste or pad. In one embodiment, the third metal particles are copper particles or silver particles. As one of the preferred embodiments, the third metal particles are nano-copper particles. As another preferred embodiment, the third metal particles are nano silver particles.
After the copper particles or the silver particles are selected, the melting point of the third metal particles is obviously higher than that of the solder paste or the soldering lug. The melting point of the second metal layer 201 formed based on the third metal particles is higher than that of solder paste or solder flakes, so that the working temperature limit of the chip is increased, and the second metal layer 201 is prevented from being melted by the heat generated by the chip.
In one embodiment, the second metal particles are metal particles made of the same material as the first metal particles. Through the metal particles with the same material, the plated first metal layer 101 and the first metal sintering connecting layer 300 are metal layers with the same material, so that the metallurgical reaction between the plated first metal layer 101 and the first metal sintering connecting layer 300 is facilitated, and the stability of the bonding interface between the plated first metal layer 101 and the first metal sintering connecting layer 300 is improved. Meanwhile, the current carrying capacity and the heat conducting performance between the plated first metal layer 101 and the first metal sintering connection layer 300 are improved. As a preferred embodiment, the second metal particles and the first metal particles are both nano silver particles.
In one embodiment, the third metal particles are metal particles made of the same material as the first metal particles. Through the metal particles with the same material, the plated second metal layer 201 and the first metal sintering connecting layer 300 are metal layers with the same material, so that the metallurgical reaction between the plated second metal layer 201 and the first metal sintering connecting layer 300 is facilitated, and the stability of the bonding interface between the plated second metal layer 201 and the first metal sintering connecting layer 300 is improved. Meanwhile, the current carrying capacity and the heat conducting performance between the plated second metal layer 201 and the first metal sintering connecting layer 300 are improved. As a preferred embodiment, the third metal particles and the first metal particles are both nano silver particles.
In one embodiment, the second metal particles are metal particles made of the same material as the first metal particles and the third metal particles. Through the metal particles with the same material, the first metal layer 101 is plated, the second metal layer 201 is plated and the first metal sintering connecting layer 300 are metal layers with the same material, a metallurgical reaction occurs between the second metal layer 201 and the first metal sintering connecting layer 300, and after the metallurgical reaction occurs between the first metal layer 101 and the first metal sintering connecting layer 300, the integrity of the first metal layer 101 is plated, the second metal layer 201 is plated and the first metal sintering connecting layer 300 is better, and the improvement of current carrying capacity, heat conducting performance and connection stability is facilitated. As a preferred embodiment, the first metal particles, the second metal particles and the third metal particles are all nano silver particles.
In the chip surface connection system, the first metal layer 101 plated on the first connection member and the first metal layer 201 plated on the second connection member are connected by the second metal sintered connection layer 300. Since the plated first metal layer 101 is formed by sintering the second metal particles and the plated second metal layer 201 is formed by sintering the third metal particles, the first metal sintered connection layer 300 is more stable. Based on this, be favorable to improving current-carrying capacity and heat conductivity, simultaneously, the accessible selects for use the melting point first metal particle, second metal particle and the third metal particle that the melting point is higher than tin, improves the restriction operating temperature value of chip.
The embodiment of the utility model provides a still provide a power module system.
Fig. 3 is a schematic structural diagram of a power module system according to an embodiment, and as shown in fig. 3, the power module system according to an embodiment includes a base plate and an IGBT power module;
the bottom plate comprises a bottom plate body 400 and a first metal layer 401 arranged on the bottom plate body 400; wherein the first metal layer 401 is composed of second metal particles sintered on one side of the bottom plate body 400;
the IGBT power module comprises an IGBT power module body 500 and a second metal layer 501 arranged on the IGBT power module body 500; the plated second metal layer 501 is composed of third metal particles sintered on one side of the IGBT power module body 500;
the first metal plated layer 401 and the second metal plated layer 501 are connected through a first metal sintered connection layer 300.
The internal space of the IGBT power module body 500 is used for arranging the IGBT power module circuit, and a protective case is provided for the IGBT power module circuit. The plated second metal layer 501 is sintered on one side of the IGBT power module body 500, that is, the third metal particles are sintered on one side surface of the IGBT power module body 500, so as to form a layer of plated second metal layer 501.
Similarly, the plated first metal layer 401 is sintered on one side surface of the bottom plate body 400 by the second metal particles.
The bottom plate body 400 includes a heat dissipation plate or a circuit substrate. When the bottom plate body 400 is a heat sink, when the circuit inside the IGBT power module body 500 operates and generates heat, the heat is conducted to the bottom plate body 400 through the second metal-plated layer 501, the first metal sintered connection layer 300, and the first metal-plated layer 401. In the backplane body 400, the current is transmitted to the backplane body 400 through the second metal plating layer 501, the first metal sintered connection layer 300, and the first metal plating layer 401.
In one of the embodiments, the IGBT power module body 500 includes a mold package, power terminals, and signal terminals;
the second metal plating layer is arranged on one side of the mold sealing body.
The IGBT power module circuit is connected with an external circuit through a power terminal and a signal terminal which are arranged outside the mold sealing body.
Fig. 4 is a schematic structural diagram of an IGBT power module according to an embodiment, and as shown in fig. 4, the IGBT power module according to an embodiment includes a first power terminal 1, a mold package 2, a plated second metal layer 3, a second power terminal 4, a first signal terminal 5, and a second signal terminal 6.
In the power module system, the first metal layer 401 plated on the bottom plate and the second metal layer 501 plated on the IGBT power module are connected through the first metal sintered connection layer 300. Since the plated first metal layer 401 is formed by sintering the second metal particles and the plated second metal layer 501 is formed by sintering the third metal particles, the first metal sintered connection layer 300 is more stable. Based on this, be favorable to improving current-carrying capacity and heat conductivity, simultaneously, the accessible selects for use the melting point first metal particle, second metal particle and the third metal particle that the melting point is higher than tin, improves IGBT power module's restriction operating temperature value.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. A chip surface connection system, comprising:
the first connecting piece comprises a first connecting piece body and a first metal layer plated on the first connecting piece body; wherein the first metal plated layer is composed of second metal particles sintered on one side of the first connector body;
a second connector comprising a second connector body and a plated second metal layer disposed on the second connector body; wherein the plated second metal layer is composed of third metal particles sintered on one side of the second connector body;
the first metal layer and the second metal layer are connected through a first metal sintering connecting layer; the first metal sintering connecting layer is formed by sintering first metal particles.
2. The chip surface connection system according to claim 1, wherein the second metal particles comprise silver particles or copper particles.
3. The chip surface connection system according to claim 1, wherein the second metal particles comprise nano-silver particles.
4. The chip surface connection system according to claim 1, wherein the third metal particles comprise silver particles or copper particles.
5. The chip surface connection system according to claim 1, wherein the third metal particles comprise nano-silver particles.
6. The chip surface connection system according to any one of claims 1 to 5, wherein the second metal particles are metal particles of the same material as the first metal particles.
7. The chip surface connection system according to any one of claims 1 to 5, wherein the third metal particles are metal particles of the same material as the first metal particles.
8. The chip surface connection system according to any one of claims 1 to 5, wherein the second metal particles are metal particles having the same material as the first metal particles and the third metal particles.
9. A power module system is characterized by comprising a bottom plate and an IGBT power module;
the bottom plate comprises a bottom plate body and a first metal layer plated on the bottom plate body; wherein the plated first metal layer is composed of second metal particles sintered on one side of the base plate body;
the IGBT power module comprises an IGBT power module body and a second metal layer arranged on the IGBT power module body; the second metal layer is formed by third metal particles sintered on one side of the IGBT power module body;
the first metal layer and the second metal layer are connected through a first metal sintering connecting layer; the first metal sintering connecting layer is formed by sintering first metal particles.
10. The power module system of claim 9, wherein the IGBT power module body comprises a mold package, power terminals, and signal terminals;
the second metal plating layer is arranged on one side of the mold sealing body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922492077.6U CN211125633U (en) | 2019-12-31 | 2019-12-31 | Chip surface connecting system and power module system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922492077.6U CN211125633U (en) | 2019-12-31 | 2019-12-31 | Chip surface connecting system and power module system |
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| Publication Number | Publication Date |
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| CN211125633U true CN211125633U (en) | 2020-07-28 |
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| CN201922492077.6U Active CN211125633U (en) | 2019-12-31 | 2019-12-31 | Chip surface connecting system and power module system |
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