CN211063049U

CN211063049U - Adjustable vertical cavity surface emitting laser based on liquid crystal structure

Info

Publication number: CN211063049U
Application number: CN202020137498.7U
Authority: CN
Inventors: 李迈克; 杨沅钊; 张�林
Original assignee: Zhonghe Boxin Chongqing Semiconductor Co ltd
Current assignee: Zhonghe Boxin Chongqing Semiconductor Co ltd
Priority date: 2020-01-21
Filing date: 2020-01-21
Publication date: 2020-07-21
Anticipated expiration: 2030-01-21

Abstract

The utility model provides an adjustable vertical cavity surface emitting laser based on liquid crystal structure, lower DBR layer including high reflectivity, DBR layer bottom is equipped with down the liquid crystal box layer, DBR layer surface order is formed with down the oxidation restrictive coating down, active area, go up the oxidation restrictive coating, high reflectivity's last DBR layer and last liquid crystal box layer, upper and lower liquid crystal box layer is including the liquid crystal positive pole that the order is range upon range of, liquid crystal box and liquid crystal cathode, the liquid crystal box includes relative configuration's lower orientation layer and last orientation layer and sets up the frame sealing glue at orientation layer edge from top to bottom, fill liquid crystal and spread the spacer ball in the liquid crystal box that upper and lower orientation layer and frame sealing glue enclose, this application is through upper and lower oxidation restrictive coating, upper and lower DBR layer and upper and lower liquid crystal box layer structure combine together, can realize top transmission and two kinds of mode switching of bottom transmission, and change the refraction coefficient of liquid crystal from top to bottom through the voltage that changes two liquid crystal layer regions from top to bottom respectively, and then regulate and control.

Description

Adjustable vertical cavity surface emitting laser based on liquid crystal structure

Technical Field

The utility model relates to the field of semiconductor technology, concretely relates to adjustable vertical cavity surface emitting laser based on liquid crystal structure.

Background

Unlike conventional Edge Emitting lasers (Edge Emitting L ase, EE L), VCSE L is a new semiconductor laser that emits light from a direction perpendicular to the Surface of a semiconductor substrate, and has many advantages such as single longitudinal mode, small divergence angle, circular symmetric light spot, high coupling efficiency, low threshold, high modulation rate, small size, two-dimensional integration, capability of on-chip testing and price, etc.

SUMMERY OF THE UTILITY MODEL

Can not adjust after the preparation to current most VCSE L light-emitting wavelength, consequently lead to it to use the technical problem who has certain limitation, the utility model provides an adjustable vertical cavity surface emitting laser based on liquid crystal structure.

In order to solve the technical problem, the utility model discloses a following technical scheme:

an adjustable vertical cavity surface emitting laser based on a liquid crystal structure comprises a lower DBR layer with high reflectivity, an active region is formed on the surface of the lower DBR layer, an upper oxidation limiting layer is formed on the surface of the active region, an upper DBR layer with high reflectivity is formed on the surface of the upper oxidation limiting layer, a lower oxidation limiting layer is arranged between the surface of the lower DBR layer and the bottom surface of the active region, a lower liquid crystal box layer is arranged on the bottom surface of the lower DBR layer, an upper liquid crystal box layer is arranged on the surface of the upper DBR layer, the upper liquid crystal box layer and the lower liquid crystal box layer comprise a liquid crystal anode, a liquid crystal box and a liquid crystal cathode which are sequentially stacked, the liquid crystal box comprises a lower orientation layer and an upper orientation layer which are oppositely arranged, and frame sealing glue arranged at the edges of the upper orientation layer and the lower orientation layer, liquid crystal and a dispersing ball are filled in the liquid crystal box body which is surrounded by the upper orientation layer and the frame, and the liquid crystal anode in the upper liquid crystal box layer is in contact with the surface of the upper DBR layer.

Compared with the prior art, the utility model provides an adjustable vertical cavity surface emitting laser based on liquid crystal structure, on the one hand through set up down the oxidation restriction layer under between DBR layer surface and active area bottom surface, therefore can constitute the dual oxidation restriction layer with the last oxidation restriction layer that the active area surface set up, therefore can play the effect of limiting current better, make carrier concentration reduce thereupon, and then the rising and the stretching of restriction active area temperature, finally realize reducing VCSE L threshold value and the effect of restraining the high-order transverse mode, on the other hand is through adding liquid crystal box layer down at DBR layer bottom surface down, and add liquid crystal box layer on upper DBR layer surface, therefore upper and lower DBR and dual liquid crystal box structure combine together, through adjusting the voltage in the liquid crystal box layer region in upper and lower liquid crystal box layer respectively, specifically through changing the voltage V that adds between liquid crystal positive pole and liquid crystal negative pole_LCThe voltage of two liquid crystal box layers of the upper liquid crystal box layer and the lower liquid crystal box layer can be respectively adjusted to change the respective refraction coefficient, so that the light-emitting wavelength can be more flexibly and diversely regulated, meanwhile, the lower cost VCSE L can also be realized, and the wide application range is realized.

Further, the reflectivity of the lower and upper DBR layers is greater than 99%.

Further, the lower liquid crystal box layer is attached to the bottom surface of the lower DBR layer, and the upper liquid crystal box layer is attached to the surface of the upper DBR layer.

Drawings

Fig. 1 is a schematic structural diagram of a tunable vertical cavity surface emitting laser based on a liquid crystal structure according to the present invention.

In the figure, 1, the lower DBR layer; 2. an active region; 3. an upper oxidation limiting layer; 4. an upper DBR layer; 5. a lower oxidation limiting layer; 6. a lower liquid crystal cell layer; 61. a liquid crystal anode; 62. a liquid crystal cathode; 63. a lower alignment layer; 64. an upper alignment layer; 65. sealing the frame glue; 66. a liquid crystal; 67. an isolation ball; 7. and (4) an upper liquid crystal box layer.

Detailed Description

In order to make the technical means, creation features, achievement purposes and functions of the present invention easy to understand and understand, the present invention is further explained by combining with the specific drawings.

In the description of the present invention, it is to be understood that the terms "longitudinal", "radial", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are merely for convenience of description and to simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention. In the description of the present invention, "a plurality" means two or more unless otherwise specified.

Referring to fig. 1, the present invention provides an adjustable vertical cavity surface emitting laser based on a liquid crystal structure, including a high-reflectivity lower DBR (Distributed Bragg Reflector) layer 1, an active region 2 formed on the surface of the lower DBR layer 1, an upper oxide confinement layer 3 formed on the surface of the active region 2, an upper DBR layer 4 formed on the surface of the upper oxide confinement layer 3, and the specific forming process and the material used for the lower DBR layer 1, the active region 2, the upper oxide confinement layer 3 and the upper DBR layer 4 are the prior art known to those skilled in the art, and are not repeated herein; particularly, a lower oxidation limiting layer 5 is arranged between the surface of the lower DBR layer 1 and the bottom surface of the active region 2, the lower oxidation limiting layer 5 and the upper oxidation limiting layer 3 have the same structure, a lower liquid crystal cell layer 6 is arranged on the bottom surface of the lower DBR layer 1, an upper liquid crystal cell layer 7 is arranged on the surface of the upper DBR layer 4, the upper liquid crystal cell layer 7 and the lower liquid crystal cell layer 6 comprise a liquid crystal anode 61, a liquid crystal cell and a liquid crystal cathode 62 which are sequentially laminated, the liquid crystal cell comprises a lower alignment layer 63 and an upper alignment layer 64 which are oppositely arranged, and a frame sealing adhesive 65 arranged on the edges of the upper and lower alignment layers, the lower alignment layer 63 and the upper alignment layer 64 can be made of an existing Polyimide (PI) material, the frame sealing adhesive 65 can be made of an existing ultraviolet curing (UV) adhesive, liquid crystals 66 and isolation balls 67 are filled in the liquid crystal cell surrounded by the lower alignment layer 63, the upper alignment layer 64 and the frame sealing adhesive 65, the specific method of liquid crystal filling and spacer ball scattering is well known in the art and will not be described herein, but the liquid crystal 66 filled in the liquid crystal cell is arranged along the rubbing groove direction of the surfaces of the upper and lower alignment layers, the spacer balls 67 are mainly used to control the cell thickness of the liquid crystal cell, the liquid crystal cathode 62 in the lower liquid crystal cell layer 6 is in contact with the bottom surface of the lower DBR layer 1, the liquid crystal anode 61 in the upper liquid crystal cell layer 7 is in contact with the surface of the upper DBR layer 4, and the liquid crystal anode 61 and the liquid crystal cathode 62 can be implemented by the existing Indium Tin Oxide (ITO) coating.

Compared with the prior art, the utility model provides an adjustable vertical cavity surface emitting laser based on liquid crystal structure, on the one hand through set up down the oxidation restriction layer under between DBR layer surface and active area bottom surface, therefore can constitute the dual oxidation restriction layer with the last oxidation restriction layer that the active area surface set up, therefore can play the effect of limiting current better, make carrier concentration reduce thereupon, and then the rising and the stretching of restriction active area temperature, finally realize reducing VCSE L threshold value and the effect of restraining the high-order transverse mode, on the other hand is through adding liquid crystal box layer down at DBR layer bottom surface under, and add liquid crystal box layer on upper DBR layer surface, therefore upper and lower DBR and dual liquid crystal box structure combine together, through adjusting respectively upper and lower liquid crystal box layer, the cavity surface emitting laserIn the region of the liquid crystal layer by varying the voltage V applied between the liquid crystal anode and the liquid crystal cathode_LCThe voltage of two liquid crystal box layers of the upper liquid crystal box layer and the lower liquid crystal box layer can be respectively adjusted to change the respective refraction coefficient, so that the light-emitting wavelength can be more flexibly and diversely regulated, meanwhile, the lower cost VCSE L can also be realized, and the wide application range is realized.

As a specific example, the lower DBR layer 1 and the upper DBR layer 4 have a reflectivity of more than 99%, and thus can well reflect the emitted laser light a plurality of times without substantially reducing the loss.

In a specific embodiment, the lower liquid crystal cell layer 6 is attached to the bottom surface of the lower DBR layer 1, the upper liquid crystal cell layer 7 is attached to the surface of the upper DBR layer 4, and the upper and lower liquid crystal cell layers may be attached to the upper and lower DBR layers by an adhesive such as glue, so that the bonding of the liquid crystal cell layers to the VCSE L structure can be made easier.

Finally, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the present invention can be modified or replaced by other means without departing from the spirit and scope of the present invention, which should be construed as limited only by the appended claims.

Claims

1. An adjustable vertical cavity surface emitting laser based on a liquid crystal structure comprises a lower DBR layer with high reflectivity, an active region is formed on the surface of the lower DBR layer, an upper oxidation limiting layer is formed on the surface of the active region, and an upper DBR layer with high reflectivity is formed on the surface of the upper oxidation limiting layer, the adjustable vertical cavity surface emitting laser is characterized in that the lower oxidation limiting layer is arranged between the surface of the lower DBR layer and the bottom surface of the active region, a lower liquid crystal box layer is arranged on the bottom surface of the lower DBR layer, an upper liquid crystal box layer is arranged on the surface of the upper DBR layer, the upper liquid crystal box layer and the lower liquid crystal box layer comprise a liquid crystal anode, a liquid crystal box and a liquid crystal cathode which are sequentially stacked, the liquid crystal box comprises a lower orientation layer and an upper orientation layer which are oppositely arranged, frame sealing glue arranged at the edges of the upper orientation layer and the lower orientation layer, liquid crystal is filled in the liquid crystal box body surrounded by the upper orientation layer and the, and the liquid crystal anode in the upper liquid crystal box layer is in contact with the surface of the upper DBR layer.

2. The tunable vcsel of claim 1, wherein the reflectivity of said lower and upper DBR layers is greater than 99%.

3. The tunable vcsel of claim 1, wherein said lower lc cell layer is bonded to the bottom surface of the lower DBR layer and said upper lc cell layer is bonded to the surface of the upper DBR layer.