CN211017016U

CN211017016U - Flow guide plate of chip manufacturing oxidation equipment and oxidation equipment for chip manufacturing

Info

Publication number: CN211017016U
Application number: CN201921978204.7U
Authority: CN
Inventors: 王丽荣; 张春卿; 吕慧敏; 李琪
Original assignee: BEIJING INFORMATION TECHNOLOGY COLLEGE
Current assignee: BEIJING INFORMATION TECHNOLOGY COLLEGE
Priority date: 2019-11-15
Filing date: 2019-11-15
Publication date: 2020-07-14
Anticipated expiration: 2029-11-15

Abstract

The utility model relates to an integrated circuit process equipment field provides the guide plate of chip manufacturing oxidation equipment and the oxidation equipment that is used for chip manufacturing. The flow guide plate of the chip manufacturing oxidation equipment comprises at least two plate bodies which are mutually connected, wherein each plate body is respectively distributed with a flow guide hole group, and the hole distance and/or the hole diameter between the flow guide hole groups on the two adjacent plate bodies are different from each other. The arrangement mode can guide the air flow by using the guide holes with different hole pitches and/or hole diameters, so that the air flow can uniformly flow over the surface of the wafer in the actual use process. When installing this guide plate in the microenvironment of oxidation equipment, can make the air current from the even flow direction opposite side in one side of microenvironment to realize the effect of horizontal laminar flow, and then make gas horizontal flow through the wafer surface in the microenvironment, avoid the particulate matter in the microenvironment to fall on the wafer surface. The method meets the requirements of the integrated circuit oxidation process equipment on the surface process of the wafer.

Description

Flow guide plate of chip manufacturing oxidation equipment and oxidation equipment for chip manufacturing

Technical Field

The utility model relates to an integrated circuit process equipment field especially relates to the guide plate of chip manufacturing oxidation equipment and the oxidation equipment that is used for chip manufacturing.

Background

In the manufacturing process of the integrated circuit chip, a plurality of process procedures are included, wherein the oxidation process of the chip is also a very important link, the requirements of the processes of the growth of the ultrathin silicon oxynitride film, the growth of the silicon oxide film and the like are mainly met, and the fine particle pollution can directly influence the yield of the product in the process procedure of the ultrathin oxide layer. Therefore, the pollution of particles to the wafer needs to be strictly controlled, wherein the realization of the horizontal laminar flow of the gas in the micro-environment is an important way for reducing the particle pollution on the surface of the wafer and uniformly reducing the temperature on the surface of the wafer, so that the particle pollution caused in the process can be effectively reduced, and the oxidation furnace equipment can meet the process requirements of the nano-scale device.

However, in many devices in the market at present, the air circulation system of the device is generally designed to enter from one side of the microenvironment and discharge from the other side, and is limited to a certain area or the air flows through the wafer area in an inclined sweeping manner, so that laminar flow of the air cannot be realized, particles fall on the wafer, particle pollution is formed, and the wafer yield is reduced. Therefore, by improving the internal gas circulation of the microenvironment, the laminar flow flowing on the surface of the silicon wafer is realized, so that the reduction of the surface particles of the wafer and the improvement of the production yield of the wafer are very important.

SUMMERY OF THE UTILITY MODEL

In order to solve the defects existing in the prior art, the utility model aims to provide a guide plate of a chip manufacturing oxidation device and an oxidation device for chip manufacturing, so as to at least realize that the air flow can flow uniformly.

According to the embodiment of the first aspect of the present invention, there is provided a flow guide plate for a chip manufacturing oxidation apparatus, the flow guide plate comprises at least two plate bodies connected to each other, wherein each of the plate bodies has flow guide hole groups distributed thereon, and adjacent two of the plate bodies have hole intervals and/or hole diameters between the flow guide hole groups different from each other.

According to the utility model discloses an embodiment, every water conservancy diversion punch combination on the plate body includes first water conservancy diversion hole subgroup and second water conservancy diversion hole subgroup, wherein, first water conservancy diversion hole subgroup with the same just hole diameter of hole interval of second water conservancy diversion hole subgroup is different.

According to the utility model discloses an embodiment, the hole diameter of first water conservancy diversion hole subgroup is less than the hole diameter of second water conservancy diversion hole subgroup.

According to the utility model discloses an along every the extending direction on the long limit of plate body, first water conservancy diversion hole subgroup place regional length is greater than the regional length in second water conservancy diversion hole subgroup place.

According to the utility model discloses an embodiment, every the hole interval in the whole water conservancy diversion hole in the water conservancy diversion punch combination that distributes on the plate body is the same.

According to an embodiment of the present invention, the shape, length and width of each plate body are identical to each other.

According to the utility model discloses an embodiment, every the material of plate body is the same, and is the metal sheet.

According to the utility model discloses an embodiment, the guide plate includes four plate bodys of interconnect, wherein, the direction of height of guide plate is with every the extending direction on the long limit of plate body is perpendicular.

According to the utility model discloses an embodiment follows the direction of height of guide plate, the superiors the hole interval of the water conservancy diversion punch combination of plate body is greater than the bottommost the hole interval of the water conservancy diversion punch combination of plate body.

According to an embodiment of the second aspect of the present invention, there is provided an oxidation apparatus for chip manufacturing, comprising a chamber and a flow guide plate of the oxidation apparatus for chip manufacturing as described above, wherein the flow guide plate is installed on a side wall of the chamber.

The beneficial effects of the utility model reside in that:

the utility model provides an among guide plate and the oxidation equipment, the guide plate includes two piece at least plate bodys of interconnect to hole interval and/or hole diameter between the water conservancy diversion punch combination on two adjacent plate bodys are different each other, can utilize the water conservancy diversion pore pair air current of different hole intervals and/or hole diameter to guide through this kind of mode of setting up, thereby make the air current can evenly flow through the wafer surface in the in-service use process. When installing this guide plate in the microenvironment of oxidation equipment, can make the air current from the even flow direction opposite side in one side of microenvironment to realize the effect of horizontal laminar flow, and then make gas horizontal flow through the wafer surface in the microenvironment, avoid the particulate matter in the microenvironment to fall on the wafer surface. The method meets the requirements of the integrated circuit oxidation process equipment on the surface process of the wafer.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

Fig. 1 is a schematic structural view of a baffle according to an embodiment of the present invention;

FIG. 2 is a schematic structural view of an oxidation apparatus according to an embodiment of the present invention; and

fig. 3 to 5 are schematic diagrams of finite element airflow analysis of the deflector of the present invention in use.

Reference numerals:

100: a baffle; 102: a plate body; 104: a group of flow guide holes; 106: the first diversion hole group; 108: the second diversion hole group; 200: an upper baffle plate body; 202: a first middle baffle plate body; 204: a second middle baffle plate body; 206: a lower deflector plate body; a: a first region; b: a second region; 300: an oxidation device; 302: a chamber.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In the description of the present invention, unless otherwise specified, "plurality", and "plural" mean two or more, and "several", and "several groups" mean one or more.

The present invention will now be described with reference to fig. 1 to 2, it being understood that the following is only an illustrative embodiment of the present invention and does not constitute any particular limitation of the present invention.

As shown, the present disclosure provides a baffle 100 for a chip manufacturing oxidation apparatus. Specifically, the baffle 100 includes at least two plates 102 connected to each other, wherein each plate 102 has a set of flow guiding holes 104 distributed thereon, and the hole distance and/or the hole diameter between the sets of flow guiding holes on two adjacent plates 102 are different from each other.

According to the structure, the air flow can be guided by the guide holes with different hole pitches and/or hole diameters in the arrangement mode, so that the air flow can uniformly flow over the surface of the wafer in the actual use process. When installing this guide plate in the microenvironment of oxidation equipment, can make the air current from the even flow direction opposite side in one side of microenvironment to realize the effect of horizontal laminar flow, and then make gas horizontal flow through the wafer surface in the microenvironment, avoid the particulate matter in the microenvironment to fall on the wafer surface. The method meets the requirements of the integrated circuit oxidation process equipment on the surface process of the wafer.

As further shown, in one embodiment, the set of guide holes 104 on each plate body 102 includes a first guide hole subset 106 and a second guide hole subset 108. Specifically, the first guide hole subgroup 106 and the second guide hole subgroup 108 have the same hole pitch and different hole diameters. In an alternative embodiment, the first subset of pilot holes 106 has a hole diameter that is smaller than the hole diameter of the second subset of pilot holes 108.

In addition, as shown in fig. 1 and the drawings, in one embodiment, along the extending direction of the long side of each plate body 102, the length of the area where the first diversion hole subgroup 106 is located is greater than the length of the area where the second diversion hole subgroup 108 is located. And optionally, the hole pitch of all the guide holes in the guide hole groups distributed on each plate body 102 is the same.

In one embodiment, the shape, length, and width of each plate body 102 may be the same as each other. And the material of each plate 102 may be the same and is a metal plate. It should be understood that the shape, length, width and material of the plate 102 can be adjusted or selected according to the requirement, and the invention is not limited thereto. In alternative embodiments, the plate 102 may be made of aluminum or stainless steel.

In the embodiment shown in the figures, the baffle 100 may comprise four plates 102 connected to each other, wherein the height direction of the baffle 100 is perpendicular to the extension direction of the long side of each plate 102. And along the height direction of the baffle 100, the hole pitch of the guide hole group of the uppermost plate body 102 is greater than the hole pitch of the guide hole group of the bottommost plate body 102.

The deflector 100 of the present invention will be described in the following by way of example, it being understood that the following is only an example of the present invention and does not constitute any limitation of the present invention.

As shown in fig. 1, the baffle 100 is divided from top to bottom into 4 partial plates, an upper baffle plate 200, a first middle baffle plate 202, a second middle baffle plate 204, and a lower baffle plate 206. Wherein the upper deflector plate body 200 has the least number of deflector holes and the largest distance, and the size of the deflector holes of the two middle deflector plate bodies is increased compared with the holes of the upper deflector plate body, and the distance between the holes is reduced. Relatively speaking, the lower baffle plate 206 has the largest number of baffle holes and the smallest spacing between the baffle holes. Further, the upper baffle plate body 200, the first middle baffle plate body 202, the second middle baffle plate body 204, and the lower baffle plate body 206 are further divided into a first area a and a second area B, respectively, and the sizes of the baffle holes of the first area a and the second area B are different.

For example, in one embodiment, on the upper baffle plate body 200, at the left first zone a, the hole pitch is 20 × 20mm and the hole diameter is Φ 3mm, at the second zone B, the hole pitch is 20 × 20mm, the hole diameter is Φ 4mm, and the plate body height is 346 mm.

On the first middle baffle plate body 202, at the left first zone a, the hole pitch is 15 × 15mm and the hole diameter is Φ 3mm, at the second zone B, the hole pitch is 15 × 15mm, the hole diameter is Φ 4mm, and the plate body height is 346 mm.

On the second middle baffle plate body 204, at the left first zone a, the hole pitch is 15 × 15mm and the hole diameter is Φ 4mm, at the second zone B, the hole pitch is 15 × 15mm, the hole diameter is Φ 5mm, and the plate body height is 346 mm.

On the lower baffle plate body 206, at the left first zone a, the hole pitch is 10 × 10mm and the hole diameter is Φ 4mm, at the second zone B, the hole pitch is 10 × 10mm, the hole diameter is Φ 5mm, and the plate body height is 346 mm.

Further, the present invention also provides an oxidation apparatus 300 for chip manufacturing. Specifically, the oxidation apparatus 300 includes a chamber 302 and the fluidic plate 100 of the chip fabrication oxidation apparatus as described above. Wherein the baffle 100 is mounted on a sidewall of the chamber 302.

In practice, the micro-environment area of the oxidation apparatus 300 of the ic process apparatus is a sealed space (i.e., the internal space of the chamber 302), wherein the internal air is circulated to circulate the gas mainly through the externally connected wind circulation system. When the boat carrying the oxide chips is lowered from the process chamber into the microenvironment, the temperature of the boat with the chips is very high, up to over 700 degrees. In the process, the horizontal laminar flow of the internal gas of the microenvironment is required to be realized, dust and particles are prevented from falling on the chip, the wind pressure of minus 100Mpa is added in the negative pressure applying area in the working process, and the wind speed on the other side of the guide plate is 0.3 m/s. The designed guide plate is installed in the microenvironment space shown in the figure, airflow analysis (shown in figure 3) is carried out on the microenvironment without the guide plate through finite elements, and the analysis (shown in the front view of figure 4 and the top view of figure 5) is carried out after the guide plate is installed, so that the conclusion is drawn, and after the guide plate is installed, the airflow of the microenvironment is changed into steady flow or laminar flow from the original turbulent flow, and the experimental requirements of the equipment are met.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.

Claims

1. The flow guide plate of the chip manufacturing oxidation equipment is characterized by comprising at least two plate bodies which are connected with each other, wherein flow guide hole groups are distributed on each plate body respectively, and hole intervals and/or hole diameters between the flow guide hole groups on two adjacent plate bodies are different from each other.

2. The baffle plate of a chip manufacturing oxidation apparatus as set forth in claim 1, wherein the set of flow guide holes on each plate body comprises a first subset of flow guide holes and a second subset of flow guide holes, wherein the first subset of flow guide holes and the second subset of flow guide holes have the same hole pitch and different hole diameters.

3. The fluidic plate of the chip fabricating oxidation apparatus of claim 2, wherein a pore diameter of the first subset of fluidic holes is smaller than a pore diameter of the second subset of fluidic holes.

4. The baffle plate of chip manufacturing oxidation equipment according to claim 2, wherein the length of the area where the first set of guiding holes is located is greater than the length of the area where the second set of guiding holes is located along the extending direction of the long side of each plate body.

5. The baffle plate for a chip manufacturing oxidation apparatus according to claim 1, wherein all the baffle holes in the set of baffle holes distributed on each plate body have the same hole pitch.

6. The flow guide plate for a chip fabricating oxidizing apparatus according to claim 1, wherein each of the plate bodies has the same shape, length and width as each other.

7. The baffle plate of chip manufacturing oxidation equipment as claimed in claim 1, wherein each plate body is made of the same material and is a metal plate.

8. The baffle plate of chip manufacturing oxidation apparatus according to claim 1, wherein the baffle plate comprises four plate bodies connected to each other, wherein a height direction of the baffle plate is perpendicular to an extending direction of a long side of each of the plate bodies.

9. The baffle plate for a chip manufacturing oxidation apparatus according to claim 8, wherein a hole pitch of the guide hole group of the uppermost plate body is larger than a hole pitch of the guide hole group of the lowermost plate body in a height direction of the baffle plate.

10. An oxidation apparatus for chip fabrication, comprising a chamber and the baffle plate of the chip fabrication oxidation apparatus according to any one of claims 1 to 9, wherein the baffle plate is mounted on a sidewall of the chamber.