CN211005713U - Telescopic polycrystalline silicon ingot furnace side heater - Google Patents
Telescopic polycrystalline silicon ingot furnace side heater Download PDFInfo
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- CN211005713U CN211005713U CN201922066128.9U CN201922066128U CN211005713U CN 211005713 U CN211005713 U CN 211005713U CN 201922066128 U CN201922066128 U CN 201922066128U CN 211005713 U CN211005713 U CN 211005713U
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Abstract
The utility model discloses a telescopic side heater of a polycrystalline silicon ingot furnace, which comprises a base, wherein a first graphite heating plate is arranged above the base, the first graphite heating plate is hinged with a second graphite heating plate, a third graphite heating plate and a fourth graphite heating plate through connecting plates at corners, and the first graphite heating plate and the second graphite heating plate are connected end to form a closed-loop square frame structure; the first graphite heating plate is formed by connecting X-shaped heating plates which are hinged with each other; the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are the same as the first graphite heating plate in structure. The graphite heating plate of diamond structure that the device can stretch and compress length through setting up to can adjust the temperature through changing comb density, and can change size and relative distance through flexible, solve prior art size fixed, heat unevenly, change that the temperature means is single, the problem that the power consumption is high, have can change the size in a flexible way, strong adaptability, can convenient adjustment temperature, the power consumption is few characteristics.
Description
Technical Field
The utility model belongs to the technical field of polycrystalline silicon ingot production and processing in the photovoltaic trade, in particular to telescopic polycrystalline silicon ingot furnace side heater.
Background
With the rapid development of ingot casting technology, higher-quality polycrystalline silicon ingots become the favorite of the current market. Meanwhile, the production is always troubled by the shadow problem during the production of silicon ingots, which is the formation of crystallites due to spontaneous nucleation caused by local undercooling. In the prior art, when the shadow problem is solved, the 'increasing of the temperature set in the crystal growth period, the increasing of the power of a top side heater, the reduction of the heat dissipation of a DS block and the like' are mostly adopted, the technical schemes reduce the supercooling degree of a solid-liquid interface in the crystal growth period to a certain extent and reduce the probability of shadow generation, but the technical schemes have the following obvious defects: 1. after the crystal growth temperature is increased, the crystal growth speed is obviously reduced due to the reduction of the supercooling degree, the crystal growth period is prolonged, and the capacity of a single ingot furnace is directly reduced; 2. after the crystal growth period is prolonged by increasing the crystal growth temperature and the heater power, the energy consumption of a single silicon ingot is increased, and the production cost is increased; 3. the increase of the power of the side heater due to the increase of the crystal growth period can cause the red area at the side part of the silicon ingot to be lengthened, and simultaneously, the overlarge current easily causes the volatilization of a gasket material to influence the resistivity of the silicon ingot, thereby causing the quality of the silicon ingot to be reduced.
The traditional bent beam type graphite heater structure has the problem of inconvenient temperature adjustment, and the heater is fixed in size and cannot adapt to the manufacturing requirements of silicon ingots with different sizes. Therefore, it is necessary to design a novel telescopic side heater to replace the bent beam type heater.
Disclosure of Invention
The utility model aims to solve the technical problem that a telescopic polycrystalline silicon ingot furnace side heater is provided, the device is through setting up the graphite hot plate that can stretch and compress the diamond-shaped structure of length to can adjust the change of temperature field in the thermal field through changing comb density, the silicon chip size difference of current market demand is big, and the long brilliant process of on the other hand casting single crystal has higher requirement to the homogeneity in temperature field. The crucibles with different sizes need to be switched in the face of differentiated products, different thermal field spaces are needed, the size and the relative distance are changed through stretching, the thermal field spaces of the crucibles with different sizes can be adjusted and adapted, and vertical growth of crystals can be better guaranteed. The problems of fixed size, uneven heating, single temperature change means and high energy consumption in the prior art are solved, and the device has the characteristics of flexible size change, strong adaptability, convenient temperature adjustment and low energy consumption.
In order to realize the above design, the utility model adopts the following technical scheme: a telescopic side heater of a polycrystalline silicon ingot furnace comprises a base, wherein a first graphite heating plate is arranged above the base, the first graphite heating plate is hinged with a second graphite heating plate, a third graphite heating plate and a fourth graphite heating plate through connecting plates at corners, and the first graphite heating plate and the second graphite heating plate are connected end to form a closed-loop square frame structure; the first graphite heating plate is formed by connecting X-shaped heating plates which are hinged with each other; the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are the same as the first graphite heating plate in structure.
The base is a rectangular structure body with a square upper surface, the middle points of four equilateral sides of the base are connected with side plates, the surfaces of the side plates are provided with through round holes, and threaded grooves are formed in the round holes.
The X-shaped heating plate is formed by hinging two strip-shaped graphite plates, and the hinging position is at the midpoint of the strip-shaped graphite plates.
The first graphite heating plate is hinged into a linear structure by 7X-shaped heating plates.
An electrode is arranged above the first graphite heating plate, and the bottom of the electrode is connected with a spring clamp structure and is connected with the first graphite heating plate through clamping.
The number of the electrodes is three, and the electrodes are clamped above the first graphite heating plate, the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate; the number of the electrodes on the same graphite heating plate is not more than one.
The hinged position of the X-shaped heating plate at the middle point of the first graphite heating plate is connected with a screw rod, and the other end of the screw rod penetrates through a threaded hole in the surface of the side plate.
And the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are matched with the side plates at corresponding positions through screw rod structures.
The bottom of the square frame structure formed by connecting the first graphite heating plate, the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate is higher than the base, and the bottom does not contact with the upper surface of the base after shrinkage deformation.
A telescopic side heater of a polycrystalline silicon ingot furnace comprises a base, wherein a first graphite heating plate is arranged above the base, the first graphite heating plate is hinged with a second graphite heating plate, a third graphite heating plate and a fourth graphite heating plate through connecting plates at corners, and the first graphite heating plate and the second graphite heating plate are connected end to form a closed-loop square frame structure; the first graphite heating plate is formed by connecting X-shaped heating plates which are hinged with each other; the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are the same as the first graphite heating plate in structure. The graphite heating plate of the diamond structure that the device can stretch and compress length is through setting up to can adjust the temperature through changing comb density, and can change size and relative distance through flexible, can change the size in a flexible way, strong adaptability, can convenient adjustment temperature, the power consumption is less.
In the preferred scheme, the base is a rectangular structure body with a square upper surface, the middle points of four equilateral sides of the base are connected with side plates, the surfaces of the side plates are provided with through round holes, and threaded grooves are formed in the round holes. Simple structure, during the use, the curb plate is used for whole graphite hot plate structure's support and size adjustment to adapt to the preparation demand of different sizes.
In a preferred scheme, the X-shaped heating plate is formed by hinging two strip-shaped graphite plates, and the hinging position is at the midpoint of the strip-shaped graphite plates. Simple structure, during the use, "X" type hot plate can be followed articulated position and rotated when pulling force or pressure are received at both sides to change height and width, provide the basis for whole piece graphite hot plate changes the size.
In a preferred embodiment, the first graphite heating plate is hinged into a linear structure by 7X-shaped heating plates. The structure is simple, when in use, the length of the whole graphite heating plate can be stretched or compressed by applying tension or pressure to the two sides of the graphite heating plate, so that the length of the whole graphite heating plate can be changed, and the combing density degree of the whole graphite heating plate can be further changed; when the temperature needs to be increased, the graphite heating plate is compressed, the density is increased, and the distance between the graphite heating plate and the silicon ingot is shortened, so that the heating temperature is increased; otherwise, when the temperature needs to be reduced, the graphite heating plate is stretched.
In preferred scheme, first graphite hot plate top is provided with the electrode, and the electrode bottom is connected with the spring clamp structure, is connected with first graphite hot plate through the centre gripping. The structure is simple, and when the electrode is used, the electrode is used for an external power supply.
In the preferred scheme, three electrodes are arranged and clamped above the first graphite heating plate, the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate; the number of the electrodes on the same graphite heating plate is not more than one. The structure is simple, and when the three-phase power supply is used, the three electrodes can be connected with a three-phase power supply; the clamping structure can facilitate the operator to change the clamping position, thereby adjusting the preset heating power.
In a preferred scheme, a screw rod is connected to the hinged position of the X-shaped heating plate at the midpoint of the first graphite heating plate, and the other end of the screw rod penetrates through a threaded hole in the surface of the side plate. Simple structure, during the use, the lead screw drives graphite hot plate through the rotation and stretches or compresses, can be connected with external automatic transmission equipment to the realization is to the flexible automatic control of graphite hot plate.
In preferred scheme, second graphite hot plate, third graphite hot plate and fourth graphite hot plate all cooperate with the curb plate that corresponds the position through the lead screw structure. Simple structure, during the use, second graphite hot plate, third graphite hot plate and fourth graphite hot plate have adopted the same structure and the cooperation mode with first graphite hot plate completely, have guaranteed the homogeneity and the accuracy nature of heating.
In preferred scheme, the bottom that square frame structure that first graphite hot plate, second graphite hot plate, third graphite hot plate and fourth graphite hot plate connect into is higher than the base, does not contact with base upper surface after the shrink deformation. Simple structure, during the use, the design that exceeds the base can provide the space for the height of the increase after graphite hot plate compression deformation to prevented to cause unnecessary calorific loss with the base contact.
A telescopic side heater of a polycrystalline silicon ingot furnace comprises a base, wherein a first graphite heating plate is arranged above the base, the first graphite heating plate is hinged with a second graphite heating plate, a third graphite heating plate and a fourth graphite heating plate through connecting plates at corners, and the first graphite heating plate and the second graphite heating plate are connected end to form a closed-loop square frame structure; the first graphite heating plate is formed by connecting X-shaped heating plates which are hinged with each other; the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are the same as the first graphite heating plate in structure. The graphite heating plate of diamond structure that the device can stretch and compress length through setting up to can adjust the temperature through changing comb density, and can change size and relative distance through flexible, solve prior art size fixed, heat unevenly, change that the temperature means is single, the problem that the power consumption is high, have can change the size in a flexible way, strong adaptability, can convenient adjustment temperature, the power consumption is few characteristics.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic view of the structure of the present invention.
Fig. 3 is a schematic structural view of the "X" type heating plate of the present invention.
The reference numbers in the figures are: first graphite hot plate 1, bar graphite board 11, "X" type hot plate 12, second graphite hot plate 2, third graphite hot plate 3, fourth graphite hot plate 4, connecting plate 5, base 6, curb plate 61, electrode 7, lead screw 8.
Detailed Description
As shown in fig. 1 to 3, a telescopic side heater of a polycrystalline silicon ingot furnace comprises a base 6, wherein a first graphite heating plate 1 is arranged above the base 6, the first graphite heating plate 1 is hinged with a second graphite heating plate 2, a third graphite heating plate 3 and a fourth graphite heating plate 4 through a connecting plate 5 at a corner, and the first graphite heating plate 1 and the second graphite heating plate are connected end to form a closed-loop square frame structure; the first graphite heating plate 1 is formed by connecting X-shaped heating plates 12 which are hinged with each other; second graphite hot plate 2, third graphite hot plate 3 and fourth graphite hot plate 4 are the same with 1 structure of first graphite hot plate. The graphite heating plate of the diamond structure that the device can stretch and compress length is through setting up to can adjust the temperature through changing comb density, and can change size and relative distance through flexible, can change the size in a flexible way, strong adaptability, can convenient adjustment temperature, the power consumption is less.
In the preferred scheme, base 6 is the rectangular structure body that the upper surface is square, and four equilateral midpoints of base 6 all are connected with curb plate 61, and the round hole that link up is seted up on curb plate 61 surface, has seted up the thread groove in the round hole. Simple structure, during the use, curb plate 61 is used for whole graphite hot plate structure's support and size adjustment to adapt to the preparation demand of different sizes.
In a preferred scheme, the X-shaped heating plate 12 is formed by hinging two strip-shaped graphite plates 11, and the hinging position is at the midpoint of the strip-shaped graphite plates 11. Simple structure, during the use, "X" type hot plate 12 when tensile force or pressure are received in both sides, can follow the articulated position rotation to change height and width, provide the basis for whole piece graphite hot plate changes the size.
In the preferred scheme, the first graphite heating plate 1 is hinged into a linear structure by 7X-shaped heating plates 12. The structure is simple, when in use, the length of the whole graphite heating plate can be stretched or compressed by applying tension or pressure to the two sides of the graphite heating plate, so that the length of the whole graphite heating plate can be changed, and the combing density degree of the whole graphite heating plate can be further changed; when the temperature needs to be increased, the graphite heating plate is compressed, the density is increased, and the distance between the graphite heating plate and the silicon ingot is shortened, so that the heating temperature is increased; otherwise, when the temperature needs to be reduced, the graphite heating plate is stretched.
In the preferred scheme, first graphite hot plate 1 top is provided with electrode 7, and electrode 7 bottom is connected with the spring clamp structure, is connected with first graphite hot plate 1 through the centre gripping. Simple structure, and when in use, the electrode 7 is used for an external power supply.
In the preferred scheme, three electrodes 7 are clamped above a first graphite heating plate 1, a second graphite heating plate 2, a third graphite heating plate 3 and a fourth graphite heating plate 4; the number of the electrodes 7 on the same graphite heating plate is not more than one. The structure is simple, and when the three-phase power supply is used, the three electrodes 7 can be connected with a three-phase power supply; the clamping structure can facilitate the operator to change the clamping position, thereby adjusting the preset heating power.
In the preferred scheme, a screw rod 8 is connected to the hinged position of the X-shaped heating plate 12 at the midpoint of the first graphite heating plate 1, and the other end of the screw rod 8 penetrates through a threaded hole in the surface of the side plate 61. Simple structure, during the use, lead screw 8 drives graphite hot plate through the rotation and stretches or compresses, can be connected with external automatic transmission equipment to the realization is to the flexible automatic control of graphite hot plate.
In the preferred scheme, second graphite hot plate 2, third graphite hot plate 3 and fourth graphite hot plate 4 all cooperate with the curb plate 61 that corresponds the position through 8 structures of lead screw. Simple structure, during the use, second graphite hot plate 2, third graphite hot plate 3 and fourth graphite hot plate 4 have adopted the structure and the cooperation mode the same with first graphite hot plate 1 completely, have guaranteed the homogeneity and the accuracy nature of heating.
In the preferred scheme, the bottom of the square frame structure formed by connecting the first graphite heating plate 1, the second graphite heating plate 2, the third graphite heating plate 3 and the fourth graphite heating plate 4 is higher than the base 6, and the shrinkage deformation is not in contact with the upper surface of the base 6. Simple structure, during the use, the design that exceeds base 6 can provide the space for the height of the increase after graphite hot plate compression deformation to prevented to cause unnecessary calorific loss with base 6 contact.
When the telescopic side heater of the polycrystalline silicon ingot furnace is installed and used, the first graphite heating plate 1 is arranged above the base 6, the first graphite heating plate 1, the second graphite heating plate 2, the third graphite heating plate 3 and the fourth graphite heating plate 4 are hinged through the connecting plates 5 at the corners, and the first graphite heating plate 1, the second graphite heating plate 2, the third graphite heating plate 3 and the fourth graphite heating plate are connected end to form a closed-loop square frame structure; the first graphite heating plate 1 is formed by connecting X-shaped heating plates 12 which are hinged with each other; second graphite hot plate 2, third graphite hot plate 3 and fourth graphite hot plate 4 are the same with 1 structure of first graphite hot plate. The graphite heating plate of the diamond structure that the device can stretch and compress length is through setting up to can adjust the temperature through changing comb density, and can change size and relative distance through flexible, can change the size in a flexible way, strong adaptability, can convenient adjustment temperature, the power consumption is less.
During the use, base 6 is the rectangular structure body of square for the upper surface, and four equilateral midpoints of base 6 all are connected with curb plate 61, and the round hole that link up is seted up on curb plate 61 surface, has seted up the thread groove in the round hole, and curb plate 61 is used for whole graphite heating plate structure's support and size adjustment to adapt to not unidimensional preparation demand.
During the use, "X" type hot plate 12 is formed by two bar graphite boards 11 are articulated, and articulated position is in bar graphite board 11 midpoint department, "X" type hot plate 12 can be followed articulated position and rotated when pulling force or pressure are received in both sides to change height and width, provide the basis for whole piece graphite hot plate change size.
When the graphite heating plate is used, the first graphite heating plate 1 is hinged into a linear structure by 7X-shaped heating plates 12, and the length of the whole graphite heating plate can be stretched or compressed by applying pulling force or pressure to the two sides of the graphite heating plate, so that the length of the whole graphite heating plate is changed, and the combing density degree of the whole graphite heating plate is further changed; when the temperature needs to be increased, the graphite heating plate is compressed, the density is increased, and the distance between the graphite heating plate and the silicon ingot is shortened, so that the heating temperature is increased; otherwise, when the temperature needs to be reduced, the graphite heating plate is stretched.
During the use, first graphite hot plate 1 top is provided with electrode 7, and electrode 7 bottom is connected with the spring clamp structure, is connected with first graphite hot plate 1 through the centre gripping, and electrode 7 is used for external power supply.
When in use, three electrodes 7 are clamped above the first graphite heating plate 1, the second graphite heating plate 2, the third graphite heating plate 3 and the fourth graphite heating plate 4; the number of the electrodes 7 on the same graphite heating plate is not more than one, and three electrodes 7 can be connected with a three-phase power supply; the clamping structure can facilitate the operator to change the clamping position, thereby adjusting the preset heating power.
During the use, the articulated department of "X" type hot plate 12 of first graphite hot plate 1 mid point position is connected with lead screw 8, and the screw hole on curb plate 61 surface is passed to the lead screw 8 other end, and lead screw 8 drives the graphite hot plate through the rotation and stretches or compress, can be connected with external automatic transmission equipment to the realization is to the flexible automatic control of graphite hot plate.
During the use, second graphite hot plate 2, third graphite hot plate 3 and fourth graphite hot plate 4 all cooperate with curb plate 61 that corresponds the position through 8 structures of lead screw, and second graphite hot plate 2, third graphite hot plate 3 and fourth graphite hot plate 4 have adopted the structure and the cooperation mode the same with first graphite hot plate 1 completely, have guaranteed the homogeneity and the accuracy nature of heating.
During the use, the bottom that square frame structure that first graphite hot plate 1, second graphite hot plate 2, third graphite hot plate 3 and fourth graphite hot plate 4 connect into is higher than base 6, does not contact with 6 upper surface of base after the shrink deformation, and the design that exceeds base 6 can provide the space for the height of the increase after graphite hot plate compression deformation to prevented to contact with base 6 and caused unnecessary calorific loss.
The above embodiments are merely preferred technical solutions of the present invention, and should not be considered as limitations of the present invention, and the features in the embodiments and the examples in the present application may be arbitrarily combined with each other without conflict. The protection scope of the present invention shall be defined by the claims and the technical solutions described in the claims, including the technical features of the equivalent alternatives as the protection scope. Namely, equivalent alterations and modifications within the scope of the invention are also within the scope of the invention.
Claims (9)
1. The utility model provides a telescopic polycrystalline silicon ingot furnace side heater which characterized in that: the heating device comprises a base (6), wherein a first graphite heating plate (1) is arranged above the base (6), the first graphite heating plate (1), a second graphite heating plate (2), a third graphite heating plate (3) and a fourth graphite heating plate (4) are hinged through a connecting plate (5) at a corner, and are connected end to form a closed-loop square frame structure; the first graphite heating plate (1) is formed by connecting X-shaped heating plates (12) which are hinged with each other; the second graphite heating plate (2), the third graphite heating plate (3) and the fourth graphite heating plate (4) have the same structure as the first graphite heating plate (1).
2. The telescopic polysilicon ingot furnace side heater of claim 1, wherein: the base (6) is a rectangular structure body with a square upper surface, four equilateral midpoints of the base (6) are connected with side plates (61), through round holes are formed in the surfaces of the side plates (61), and thread grooves are formed in the round holes.
3. The telescopic polysilicon ingot furnace side heater of claim 1, wherein: the X-shaped heating plate (12) is formed by hinging two strip-shaped graphite plates (11), and the hinging position is at the midpoint of the strip-shaped graphite plates (11).
4. The telescopic polysilicon ingot furnace side heater of claim 1, wherein: the first graphite heating plate (1) is hinged into a linear structure by 7X-shaped heating plates (12).
5. The telescopic polysilicon ingot furnace side heater of claim 4, wherein: an electrode (7) is arranged above the first graphite heating plate (1), and a spring clamp structure is connected to the bottom of the electrode (7) and connected with the first graphite heating plate (1) through clamping.
6. The telescopic polysilicon ingot furnace side heater of claim 5, wherein: three electrodes (7) are clamped above the first graphite heating plate (1), the second graphite heating plate (2), the third graphite heating plate (3) and the fourth graphite heating plate (4); the number of the electrodes (7) on the same graphite heating plate is not more than one.
7. The telescopic polysilicon ingot furnace side heater of claim 1, wherein: the hinged position of the X-shaped heating plate (12) in the middle of the first graphite heating plate (1) is connected with a screw rod (8), and the other end of the screw rod (8) penetrates through a threaded hole in the surface of the side plate (61).
8. The telescopic polysilicon ingot furnace side heater of claim 1, wherein: and the second graphite heating plate (2), the third graphite heating plate (3) and the fourth graphite heating plate (4) are matched with the side plates (61) at corresponding positions through screw rod structures.
9. The telescopic polysilicon ingot furnace side heater of claim 1, wherein: the bottom of the square frame structure formed by connecting the first graphite heating plate (1), the second graphite heating plate (2), the third graphite heating plate (3) and the fourth graphite heating plate (4) is higher than the base (6), and the bottom does not contact with the upper surface of the base (6) after shrinkage deformation.
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| CN201922066128.9U CN211005713U (en) | 2019-11-26 | 2019-11-26 | Telescopic polycrystalline silicon ingot furnace side heater |
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| CN201922066128.9U CN211005713U (en) | 2019-11-26 | 2019-11-26 | Telescopic polycrystalline silicon ingot furnace side heater |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111850683A (en) * | 2020-07-31 | 2020-10-30 | 刘穗 | Heat balance's high-efficient type ingot furnace |
| CN112048610A (en) * | 2020-09-08 | 2020-12-08 | 肖述虎 | Heat treatment equipment and heat treatment method for ultra-long aluminum alloy extruded section |
-
2019
- 2019-11-26 CN CN201922066128.9U patent/CN211005713U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111850683A (en) * | 2020-07-31 | 2020-10-30 | 刘穗 | Heat balance's high-efficient type ingot furnace |
| CN111850683B (en) * | 2020-07-31 | 2021-12-24 | 扬州晶樱光电科技有限公司 | Heat balance's high-efficient type ingot furnace |
| CN112048610A (en) * | 2020-09-08 | 2020-12-08 | 肖述虎 | Heat treatment equipment and heat treatment method for ultra-long aluminum alloy extruded section |
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