CN210945753U

CN210945753U - Vapor deposition mask and vapor deposition mask device

Info

Publication number: CN210945753U
Application number: CN201921294876.6U
Authority: CN
Inventors: 细田哲史; 村田佳则
Original assignee: Dai Nippon Printing Co Ltd
Current assignee: Dai Nippon Printing Co Ltd
Priority date: 2018-08-10
Filing date: 2019-08-09
Publication date: 2020-07-07
Anticipated expiration: 2029-08-09
Also published as: JP7078118B2; TWI773911B; CN110819938B; JPWO2020032149A1; CN110819938A; WO2020032149A1; TW202033793A

Abstract

The utility model provides an evaporation coating mask and evaporation coating mask device. The vapor deposition mask includes: a mask having a plating layer formed with a 1 st through hole; and a support joined to the mask and having a 2 nd through-hole overlapping the 1 st through-hole in a plan view.

Description

Vapor deposition mask and vapor deposition mask device

Technical Field

The present disclosure relates to a vapor deposition mask and a vapor deposition mask device.

Background

In recent years, a display device used in a portable device such as a smartphone or a tablet PC is required to have high definition, for example, a pixel density of 500ppi or more. In addition, in portable devices, there is an increasing demand for Ultra High Definition (UHD), and in this case, the pixel density of a display device is required to be, for example, 800ppi or more.

Among display devices, organic EL display devices have attracted attention because of their good responsiveness, low power consumption, and high contrast. As a method of forming pixels of an organic EL display device, the following methods are known: pixels are formed in a desired pattern using an evaporation mask including through holes arranged in the desired pattern. Specifically, first, a substrate for an organic EL display device (organic EL substrate) is put into a vapor deposition device, and then a vapor deposition mask is brought into close contact with the organic EL substrate in the vapor deposition device, thereby performing a vapor deposition step of depositing an organic material on the organic EL substrate.

Patent document 1: japanese patent laid-open publication No. 2016-148112

In the technique disclosed in patent document 1, a vapor deposition mask is manufactured by plating, and then the vapor deposition mask is attached to a frame to manufacture a vapor deposition mask device. At this time, the frame of the vapor deposition mask device holds the vapor deposition mask in a tensioned state. That is, the vapor deposition mask is given a tensile force in a state of being fixed to the frame. This suppresses the generation of deflection in the vapor deposition mask. However, the following problems are found: since tension is applied to the thin vapor deposition mask, wrinkles and deformation occur in the vapor deposition mask.

SUMMERY OF THE UTILITY MODEL

The present disclosure has been made in view of such a situation, and an object thereof is to provide a vapor deposition mask and a vapor deposition mask device capable of suppressing generation of wrinkles and deformation in the vapor deposition mask.

A first aspect of the present disclosure is a vapor deposition mask including: a mask having a plating layer formed with a 1 st through hole; and a support joined to the mask and having a 2 nd through-hole overlapping the 1 st through-hole in a plan view, wherein the support has a thickness of 0.20mm to 2.0 mm.

In a 2 nd aspect of the present disclosure, in the vapor deposition mask according to the 1 st aspect, the support may have a 1 st layer bonded to the mask and a 2 nd layer bonded to the 1 st layer, and the 2 nd through hole may penetrate the 1 st layer and the 2 nd layer.

In the vapor deposition mask according to claim 2 of the present disclosure, in the 3 rd aspect, the 1 st layer and the 2 nd layer may be bonded to each other by an adhesive, solder, or soldering.

In the 4 th aspect of the present disclosure, in the vapor deposition mask according to the 2 nd or 3 rd aspect, a bonding surface between the 1 st layer and the 2 nd layer may be covered with a metal from a side.

In the 5 th aspect of the present disclosure, the metal may be formed by plating in the vapor deposition mask of the 4 th aspect.

In the vapor deposition mask according to claim 6 of the present disclosure, the support may further include a 3 rd layer bonded to the 2 nd layer in each of the vapor deposition masks according to the 2 nd to 5 th aspects.

In the vapor deposition mask according to claim 6 of the 7 th aspect of the present disclosure, the 2 nd layer and the 3 rd layer may be bonded to each other by an adhesive, solder, or soldering.

In the 8 th aspect of the present disclosure, in the vapor deposition mask according to the 6 th or 7 th aspect, a bonding surface between the 2 nd layer and the 3 rd layer may be covered with a metal from a side.

In the 9 th aspect of the present disclosure, the metal may be formed by plating in the vapor deposition mask of the 8 th aspect.

In a 10 th aspect of the present disclosure, in the vapor deposition mask according to each of the 1 st to 9 th aspects, the support may include a material having a shear modulus (stiffness ratio) of 50GPa or more and 65GPa or less.

An 11 th aspect of the present disclosure is a vapor deposition mask device including: a vapor deposition mask according to any one of the above-described 1 to 10 aspects; and a frame joined to the support of the vapor deposition mask and provided with an opening overlapping with the 2 nd through hole in a plan view.

According to the embodiments of the present disclosure, generation of wrinkles and deformation in the vapor deposition mask can be suppressed.

Drawings

Fig. 1 is a diagram for explaining one embodiment of the present disclosure, and is a diagram for explaining a vapor deposition device having a vapor deposition mask device and a vapor deposition method using the vapor deposition device.

Fig. 2 is a cross-sectional view showing an example of an organic EL display device manufactured by the vapor deposition device shown in fig. 1.

Fig. 3 is a plan view schematically showing an example of a vapor deposition mask device having a vapor deposition mask.

Fig. 4 is a cross-sectional view showing the vapor deposition mask device in a cross-section corresponding to line IV-IV of fig. 3.

Fig. 5 is a partially enlarged view showing a mask of the vapor deposition mask device of fig. 3 (an enlarged view of a V portion of fig. 3).

Fig. 6A is a cross-sectional view showing the mask in a cross-section corresponding to the VIA-VIA line of fig. 5.

Fig. 6B is a cross-sectional view showing the support body of fig. 4 in more detail.

Fig. 7A is a schematic perspective view for explaining a shear modulus.

Fig. 7B is a diagram for explaining a vapor deposition method using a vapor deposition device.

Fig. 8A is a diagram showing one step of an example of a method for manufacturing a pattern substrate for manufacturing a mask by plating.

Fig. 8B is a diagram showing one step of an example of a method for manufacturing a pattern substrate for manufacturing a mask by plating.

Fig. 8C is a diagram showing one step of an example of a method for manufacturing a pattern substrate for manufacturing a mask by plating.

Fig. 8D is a diagram showing one step of an example of a method for manufacturing a pattern substrate for manufacturing a mask by plating.

Fig. 9A is a diagram illustrating one step of an example of a method for manufacturing a mask by plating.

Fig. 9B is a diagram illustrating one step of an example of a method for manufacturing a mask by plating.

Fig. 9C is a diagram showing one step of an example of a method for manufacturing a mask by plating.

Fig. 9D is a diagram illustrating one step of an example of a method for manufacturing a mask by plating.

Fig. 10A is a diagram illustrating a process of forming a resist pattern on a metal plate.

Fig. 10B is a diagram illustrating the 1 st surface etching step.

Fig. 10C is a view showing the 2 nd surface etching step.

Fig. 10D is a view showing a process of removing the resin and the resist pattern from the metal plate.

Fig. 11A is a diagram illustrating one step of an example of a method for manufacturing a vapor deposition mask.

Fig. 11B is a diagram illustrating one step of an example of a method for manufacturing a vapor deposition mask.

Fig. 11C is a diagram illustrating one step of an example of a method for manufacturing a vapor deposition mask.

Fig. 12A is a diagram illustrating one step of an example of a method for manufacturing a vapor deposition mask device.

Fig. 12B is a diagram illustrating one step of an example of a method for manufacturing a vapor deposition mask device.

Fig. 12C is a diagram illustrating one step of an example of a method for manufacturing a vapor deposition mask device.

Fig. 13A is a diagram illustrating a step of depositing a vapor deposition material on an organic EL substrate.

Fig. 13B is a diagram illustrating a step of depositing a vapor deposition material on an organic EL substrate.

Fig. 14 is a diagram illustrating a step of depositing a vapor deposition material on an organic EL substrate.

Fig. 15 is a plan view schematically showing a modification of the mask.

Fig. 16 is a cross-sectional view showing a modification of the support body.

Fig. 17A is a cross-sectional view showing a modification of the method of manufacturing the support body.

Fig. 17B is a cross-sectional view showing a modification of the method of manufacturing the support body.

Fig. 17C is a cross-sectional view showing a modification of the method of manufacturing the support body.

Fig. 18A is a cross-sectional view showing a modification of the support body.

Fig. 18B is a cross-sectional view showing a modification of the support body.

Fig. 18C is a cross-sectional view showing a modification of the method of manufacturing the support body.

Fig. 18D is a cross-sectional view showing a modification of the method for manufacturing the support body.

FIG. 18E is a cross-sectional view showing a modified example of the method for manufacturing the support body

Fig. 18F is a cross-sectional view showing a modified example of the support body.

Fig. 19A is a cross-sectional view showing a modification of the mask manufacturing method.

Fig. 19B is a cross-sectional view showing a modification of the mask manufacturing method.

Fig. 19C is a cross-sectional view showing a modification of the mask manufacturing method.

Detailed Description

In the present specification and the present drawings, unless otherwise specified, terms such as "plate", "sheet", "film", and the like are not distinguished from each other only by the difference in designation. For example, "plate" is a concept that also includes a member that can be referred to as a sheet or a film. The "surface (sheet surface, film surface)" refers to a surface that coincides with the planar direction of the target plate-shaped member (sheet-shaped member, film-shaped member) when the target plate-shaped member (sheet-shaped member, film-shaped member) is viewed as a whole and globally. The normal direction used for a plate-shaped (sheet-shaped or film-shaped) member means a normal direction to a surface (sheet surface or film surface) of the member. Further, terms used in the present specification to specify the shape, the geometric condition, and the degree thereof, such as "parallel" and "perpendicular", and values of the length and the angle are not limited to strict meanings, and are interpreted to include ranges of degrees in which the same function can be expected.

In the present specification and the drawings, unless otherwise specified, terms such as "parallel" and "perpendicular" and the like, lengths, angles, and the like that specify the shape, the geometric condition, and the degree thereof are not limited to strict meanings, and are to be interpreted to include ranges of degrees that can expect the same function.

In the present specification and the drawings, unless otherwise specified, the case where a certain structure such as a certain component or a certain region is provided "on (or under)", or "above (or under)" another structure such as another component or another region is explained by including not only the case where a certain structure is in direct contact with another structure but also the case where another structure is included between a certain structure and another structure. Note that, unless otherwise specified, the description may be made using terms such as up (or upper side, upper side) or down (or lower side, lower side), but the up-down direction may be reversed.

In the present specification and the drawings, the same reference numerals or similar reference numerals are given to the same parts or parts having the same functions unless otherwise specified, and repeated explanation thereof may be omitted. For convenience of explanation, the dimensional ratios in the drawings may be different from the actual ratios, and some of the structures may be omitted from the drawings.

In the present specification and the drawings, unless otherwise specified, other embodiments and modifications may be combined within a range not inconsistent with each other. In addition, other embodiments, and modifications can be combined within a range that does not contradict each other. Further, the modifications can be combined with each other within a range not contradictory to each other.

In the present specification and the present drawings, unless otherwise specified, when a plurality of steps are disclosed with respect to a method such as a manufacturing method, other steps not disclosed may be performed between the disclosed steps. The order of the steps disclosed is arbitrary within a range not inconsistent with each other.

In the present specification and the drawings, unless otherwise specified, a numerical range expressed by a symbol such as "to" includes numerical values placed before and after the symbol such as "to". For example, the numerical range defined by the expression "34 to 38% by mass" is the same as the numerical range defined by the expression "34% by mass or more and 38% by mass or less".

In the present specification and the present drawings, the "plan view" refers to a state of being viewed from a normal direction perpendicular to a planar direction of a plate-shaped member when the plate-shaped member as a target is viewed as a whole and globally. For example, a plate-like member "having a rectangular shape in a plan view" means that the member has a rectangular shape when viewed from a normal direction.

In one embodiment of the present specification, an example of a vapor deposition mask used for patterning an organic material onto a substrate in a desired pattern in the production of an organic EL display device and a method for producing the same will be described. However, the present embodiment is not limited to this application, and can be applied to a vapor deposition mask used for various applications.

An embodiment of the present disclosure will be described in detail below with reference to the drawings. The embodiments described below are examples of the embodiments of the present disclosure, and the present disclosure is not limited to these embodiments.

First, a vapor deposition device 90 that performs a vapor deposition process for depositing a vapor deposition material on an object will be described with reference to fig. 1. As shown in fig. 1, the vapor deposition device 90 may have a vapor deposition source (e.g., a crucible 94), a heater 96, and a vapor deposition mask device 10 inside thereof. The vapor deposition device 90 may further include an exhaust unit (not shown) for making the inside of the vapor deposition device 90 a vacuum atmosphere. The crucible 94 contains a deposition material 98 such as an organic light emitting material. The heater 96 heats the crucible 94 to evaporate the evaporation material 98 in a vacuum atmosphere. The vapor deposition mask device 10 is disposed to face the crucible 94.

As shown in fig. 1, the vapor deposition mask device 10 may include a vapor deposition mask 20 and a frame 15 joined to a support 40 of the vapor deposition mask 20, which will be described later. In this case, the vapor deposition mask 20 may be supported by the frame 15 in a state of being stretched in the surface direction thereof so that the vapor deposition mask 20 is not bent, or the vapor deposition mask 20 may be supported by the frame 15 so as not to be stretched in the surface direction thereof. As shown in fig. 1, the vapor deposition mask device 10 may be disposed in the vapor deposition device 90 such that the vapor deposition mask 20 faces a vapor deposition substrate (e.g., an organic EL substrate) 92 that is an object to which a vapor deposition material 98 is to be attached.

As shown in fig. 1, the vapor deposition mask device 10 may include a magnet 93, and the magnet 93 may be disposed on a surface of the vapor deposition substrate 92 opposite to the vapor deposition mask 20. By providing the magnet 93, the vapor deposition mask 20 can be attracted toward the magnet 93 by magnetic force, and the vapor deposition mask 20 can be brought into close contact with the vapor deposition substrate 92.

Next, the vapor deposition mask 20 of the vapor deposition mask device 10 will be described. As shown in fig. 1, the vapor deposition mask 20 may have: a mask 30 having a plating layer 31 formed with a 1 st through hole 35; and a support 40 joined to the mask 30 and having a 2 nd through-hole 45 formed therein so as to overlap the 1 st through-hole 35 in a plan view. Among them, the 1 st through hole 35 of the mask 30 may be formed in plural.

As shown in fig. 1, the mask 30 may have a 1 st surface 30a and a 2 nd surface 30b constituting a surface on the opposite side of the 1 st surface 30 a. In the illustrated example, the mask 30 is disposed between the deposition target substrate 92 and the crucible 94. The mask 30 may be supported in the vapor deposition device 90 so that the 1 st surface 30a faces the lower surface of the vapor deposition substrate 92, in other words, the 2 nd surface 30b faces the crucible 94, and used to deposit the vapor deposition material 98 on the vapor deposition substrate 92. In the vapor deposition device 90 shown in fig. 1, the vapor deposition material 98 that has evaporated from the crucible 94 and reached the vapor deposition mask 20 from the 2 nd surface 30b side of the mask 30 passes through the 2 nd through holes 45 of the support 40 and the 1 st through holes 35 of the mask 30, and adheres to the vapor deposition substrate 92. This allows vapor deposition material 98 to be formed on the surface of vapor deposition substrate 92 in a desired pattern corresponding to the position of 1 st through hole 35 of mask 30.

Fig. 2 is a cross-sectional view showing an organic EL display device 100 manufactured using the vapor deposition device 90 of fig. 1. The organic EL display device 100 may include an evaporation target substrate (organic EL substrate) 92 and pixels including an evaporation material 98 provided in a pattern. In the organic EL display device 100 of fig. 2, electrodes for applying a voltage to pixels including the vapor deposition material 98 are omitted. After the vapor deposition step of providing the vapor deposition material 98 in a pattern on the organic EL substrate 92, the organic EL display device 100 of fig. 2 can be provided with other components of the organic EL display device. Therefore, the organic EL display device 100 of fig. 2 can be referred to as an intermediate of the organic EL display device.

When color display by a plurality of colors is desired, vapor deposition devices 90 on which vapor deposition mask devices 10 corresponding to the respective colors are mounted are prepared, and vapor deposition substrates 92 are sequentially introduced into the vapor deposition devices 90. Thus, for example, the organic light emitting material for red, the organic light emitting material for green, and the organic light emitting material for blue can be sequentially deposited on the deposition substrate 92.

The vapor deposition process may be performed inside the vapor deposition device 90 in a high-temperature atmosphere. In this case, the vapor deposition mask 20, the frame 15, and the vapor deposition substrate 92 held in the vapor deposition device 90 are also heated during the vapor deposition process. At this time, the mask 30 and the support 40 of the vapor deposition mask 20, the frame 15, and the vapor deposition substrate 92 exhibit behaviors based on dimensional changes of respective thermal expansion coefficients. In this case, when the mask 30, the support 40, and the frame 15 have significantly different thermal expansion coefficients from the vapor deposition substrate 92, a positional shift occurs due to the difference in dimensional change between them, and as a result, the dimensional accuracy and positional accuracy of the vapor deposition material adhering to the vapor deposition substrate 92 are degraded.

In order to solve such a problem, the thermal expansion coefficients of the mask 30, the support 40, and the frame 15 are preferably the same as the thermal expansion coefficient of the vapor deposition substrate 92. For example, when a glass substrate is used as the deposition target substrate 92, an iron alloy containing nickel can be used as a main material of the mask 30, the support 40, and the frame 15. For example, as a material of the members constituting the mask 30, the support 40, and the frame 15, an iron alloy containing 30 mass% or more and 54 mass% or less of nickel can be used. Specific examples of the iron alloy containing nickel include invar alloy materials containing 34 mass% or more and 38 mass% or less of nickel, super invar alloy materials containing 30 mass% or more and 34 mass% or less of nickel and also containing cobalt, and low thermal expansion Fe — Ni-based plating alloys containing 38 mass% or more and 54 mass% or less of nickel.

In the vapor deposition process, when the temperatures of the mask 30, the support 40, the frame 15, and the vapor deposition substrate 92 do not reach high temperatures, the thermal expansion coefficients of the mask 30, the support 40, and the frame 15 may not be set to the same value as the thermal expansion coefficient of the vapor deposition substrate 92. In this case, materials other than the iron alloy described above can be used as the materials constituting the mask 30 and the support 40. For example, an iron alloy other than the above-described iron alloy containing nickel, such as an iron alloy containing chromium, may be used. As the iron alloy containing chromium, for example, an iron alloy called so-called stainless steel can be used. Further, a metal or an alloy other than an iron alloy such as nickel or a nickel-cobalt alloy may be used.

Next, the mask 30, the support 40, and the frame 15 of the vapor deposition mask 20 will be described in more detail with reference to fig. 1 and fig. 3 to 6B.

First, the mask 30 will be described in detail. The mask 30 may be fabricated by a plating process. As shown in fig. 3, the mask 30 may have a substantially rectangular shape in a plan view. The mask 30 may have frame-shaped ear portions 17 constituting outer edges 30e of the mask 30, and an intermediate portion 18 surrounded by the ear portions 17. The lug portions 17 are portions to be attached to the support 40 in the vapor deposition process using the vapor deposition mask 20. The ear portion 17 is not a region through which the vapor deposition material to be deposited on the organic EL substrate 92 passes.

As shown in fig. 3 to 5, the intermediate portion 18 of the vapor deposition mask 20 may include an effective region 22 in which the 1 st through holes 35 (see fig. 4 and 5) are formed in a regular array, and a peripheral region 23 surrounding the effective region 22. The peripheral region 23 is a region for supporting the effective region 22, and is not a region through which the vapor deposition material 98 intended to be deposited on the organic EL substrate 92 passes. On the other hand, in the vapor deposition mask 20 used for vapor deposition of an organic light-emitting material, the effective region 22 of the mask 30 is a region in the vapor deposition mask 20 facing a region that is a display region of the organic EL substrate 92, and the organic EL substrate 92 is formed by vapor deposition of an organic light-emitting material to form pixels. However, the peripheral region 23 may be formed with a through hole or a recess according to various purposes. In the example shown in fig. 3, each effective region 22 has a substantially quadrangular shape in plan view, and more precisely, has a substantially rectangular outline in plan view. Although not shown, each effective region 22 can have a contour of various shapes depending on the shape of the display region of the organic EL substrate 92. That is, each effective region 22 may have an outline corresponding to a display region of each application displayed by the organic EL display device 100, and for example, in the case where the organic EL display device 100 is used in a wristwatch, each effective region 22 may have a circular outline.

As shown in fig. 3, the plurality of effective regions 22 of the vapor deposition mask 20 may be arranged at predetermined intervals in two directions perpendicular to each other. In the illustrated example, one effective region 22 corresponds to one organic EL display device. That is, according to the vapor deposition mask device 10 (mask 30) shown in fig. 3 and 4, multi-surface vapor deposition can be performed. As shown in fig. 5, the 1 st through holes 35 formed in each effective region 22 may be arranged at a predetermined pitch in two directions perpendicular to each other in the effective region 22.

Next, the plating layer 31 of the mask 30 will be described with reference to fig. 6A. As shown in fig. 6A, the plating layer 31 of the mask 30 may include a 1 st metal layer 32 having a 1 st opening 30c and a 2 nd metal layer 37 having a 2 nd opening 30d communicating with the 1 st opening 30c in a predetermined pattern. In the example shown in fig. 6A, the 1 st metal layer 32 constitutes the 1 st surface 30a of the mask 30, and the 2 nd metal layer 37 constitutes the 2 nd surface 30b of the mask 30.

In the present embodiment, the 1 st opening 30c and the 2 nd opening 30d communicate with each other, and thereby the 1 st through hole 35 penetrating the mask 30 can be formed. In this case, the opening size and the opening shape of the 1 st through hole 35 on the 1 st surface 30a side of the mask 30 can be defined by the 1 st opening 30c of the 1 st metal layer 32. On the other hand, the opening size and the opening shape of the 1 st through hole 35 on the 2 nd surface 30b side of the mask 30 can be defined by the 2 nd opening 30d of the 2 nd metal layer 37. In other words, both the shape defined by the 1 st opening 30c of the 1 st metal layer 32 and the shape defined by the 2 nd opening 30d of the 2 nd metal layer 37 can be given to the 1 st through hole 35.

As shown in fig. 5, the 1 st opening 30c and the 2 nd opening 30d constituting the 1 st through hole 35 may have a substantially polygonal shape in a plan view. Here, an example is shown in which the 1 st opening 30c and the 2 nd opening 30d have a substantially rectangular shape, more specifically, a substantially square shape. Although not shown, the 1 st opening 30c and the 2 nd opening 30d may have other substantially polygonal shapes such as substantially hexagonal shapes and substantially octagonal shapes. The term "substantially polygonal shape" is a concept including a shape in which corners of a polygon are chamfered. Although not shown, the 1 st opening 30c and the 2 nd opening 30d may have a circular shape. In addition, the shape of the 1 st opening 30c and the shape of the 2 nd opening 30d do not need to be similar as long as the 2 nd opening 30d has a contour surrounding the 1 st opening 30c in a plan view.

In fig. 6A, reference numeral 41 denotes a connection portion connecting the 1 st metal layer 32 and the 2 nd metal layer 37. Note that reference numeral S0 denotes the size of the 1 st through hole 35 at the connection portion 41 between the 1 st metal layer 32 and the 2 nd metal layer 37. In addition, although fig. 6A shows an example in which the 1 st metal layer 32 and the 2 nd metal layer 37 are in contact with each other, the present invention is not limited to this, and another layer may be present between the 1 st metal layer 32 and the 2 nd metal layer 37. For example, a catalyst layer for promoting the deposition of the 2 nd metal layer 37 on the 1 st metal layer 32 may be provided between the 1 st metal layer 32 and the 2 nd metal layer 37.

As shown in fig. 6A, the opening size S2 of the 1 st through hole 35 (the 2 nd opening 30d) at the 2 nd surface 30b may be larger than the opening size S1 of the 1 st through hole 35 (the 1 st opening 30c) at the 1 st surface 30 a. The advantages of the 1 st metal layer 32 and the 2 nd metal layer 37 thus configured will be described below.

The vapor deposition material 98 that has flown from the 2 nd surface 30b side of the mask 30 toward the mask 30 passes through the 2 nd opening 30d and the 1 st opening 30c of the 1 st through hole 35 in this order and adheres to the organic EL substrate 92. The region of the organic EL substrate 92 to which the vapor deposition material 98 adheres is mainly determined by the opening size S1 and the opening shape of the 1 st through hole 35 on the 1 st surface 30 a. As shown by an arrow from the 2 nd surface 30b side toward the 1 st surface 30a in fig. 6A, the vapor deposition material 98 may move not only from the crucible 94 toward the organic EL substrate 92 along the normal direction N of the mask 30 but also in a direction greatly inclined with respect to the normal direction N of the mask 30. Here, assuming that the opening dimension S2 of the 1 st through hole 35 on the 2 nd surface 30b is the same as the opening dimension S1 of the 1 st through hole 35 on the 1 st surface 30a, most of the vapor deposition material 98 moving in a direction greatly inclined with respect to the normal direction N of the mask 30 reaches and adheres to the wall surface 36 of the 2 nd opening 30d of the 1 st through hole 35 before passing through the 1 st through hole 35 and reaching the organic EL substrate 92. Therefore, in order to improve the utilization efficiency of the vapor deposition material 98, it can be said that the opening size S2 of the 2 nd opening 30d is preferably increased.

In fig. 6A, a path of the vapor deposition material 98 passing through the end 38 of the 1 st through hole 35 (the 2 nd opening 30d) on the 2 nd surface 30b side of the mask 30, that is, a path having the smallest angle with respect to the normal direction N of the mask 30 among paths that can reach the organic EL substrate 92 is denoted by reference numeral L1. An angle formed by the path L1 and the normal direction N of the mask 30 is denoted by reference numeral θ 1. It is advantageous to increase the angle θ 1 so that the obliquely moved vapor deposition material 98 reaches the organic EL substrate 92 as far as possible and does not reach the wall surface 36 of the 2 nd opening 30 d. For example, the angle θ 1 is preferably 45 ° or more.

The opening sizes S0, S1, and S2 are appropriately set in consideration of the pixel density of the organic EL display device, the desired value of the angle θ 1, and the like. For example, in the case of manufacturing an organic EL display device having a pixel density of 400ppi or more, the opening size S0 of the 1 st through hole 35 at the connection portion 41 can be set within a range of 20 μm or more and 60 μm or less. The opening size S1 of the 1 st opening 30c on the 1 st surface 30a can be set to be in the range of 10 μm to 50 μm, and the opening size S2 of the 2 nd opening 30d on the 2 nd surface 30b can be set to be in the range of 15 μm to 80 μm.

The thickness T0 of the mask 30 may be set to, for example, 2.0 μm or more and 50 μm or less.

The range of the thickness T0 of the mask 30 may be determined by the 1 st group consisting of 2.0 μm, 5.0 μm, 10 μm and 15 μm and/or the 2 nd group consisting of 20 μm, 30 μm, 40 μm and 50 μm. The lower limit of the range of the thickness T0 of the mask 30 may be determined by any one of the values included in the above group 1. For example, the lower limit of the range of the thickness T0 of the mask 30 may be 2.0 μm or more, 5.0 μm or more, 10 μm or more, and 15 μm or more. The upper limit of the range of the thickness T0 of the mask 30 may be determined by any one of the values included in the above group 2. For example, the upper limit of the range of the thickness T0 of the mask 30 may be 20 μm or less, may be 30 μm or less, may be 40 μm or less, and may be 50 μm or less. The range of the thickness T0 of the mask 30 can be determined by a combination of any one of the values included in the above group 1 and any one of the values included in the above group 2, and may be, for example, 2.0 μm or more and 50 μm or less, 5.0 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, and 15 μm or more and 20 μm or less. The range of the thickness T0 of the mask 30 can be determined by a combination of 2 arbitrary values among the values included in the group 1, and may be, for example, 2.0 μm or more and 15 μm or less, 2.0 μm or more and 10 μm or less, 5.0 μm or more and 15 μm or less, or 5.0 μm or more and 10 μm or less. The range of the thickness T0 of the mask 30 may be determined by a combination of 2 arbitrary values among the values included in the group 2, and may be, for example, 20 μm or more and 50 μm or less, 20 μm or more and 40 μm or less, 30 μm or more and 50 μm or less, or 30 μm or more and 40 μm or less.

Next, the support 40 will be described in detail. As shown in fig. 3, the support body 40 may have a substantially rectangular shape in plan view. The support 40 may have a size larger than the mask 30 in the plane direction, and the outline of the definition support 40 may surround the outline of the definition mask 30 in a plan view. The support 40 may be attached to the mask 30 so that each side of the support 40 corresponds to each side of the mask 30.

As described above, the support 40 may be provided with the plurality of 2 nd through holes 45, and the 2 nd through holes 45 may be larger than the effective region 22 of the mask 30 in a plan view. Further, one 2 nd through hole 45 of the support 40 may correspond to one effective region 22 of the mask 30.

As shown in fig. 3, the 2 nd through hole 45 may have a substantially quadrangular shape in plan view, for example, or more precisely, a substantially rectangular outline in plan view. Although not shown, each of the 2 nd through holes 45 may have a contour of various shapes depending on the shape of the display region of the deposition substrate (organic EL substrate) 92. For example, each 2 nd through hole 45 may have a circular contour. In fig. 3, the 2 nd through holes 45 are shown to have the same planar shape, but the invention is not limited thereto, and the 2 nd through holes 45 may have different opening shapes. In other words, the support body 40 may include a plurality of 2 nd through holes 45 having different planar shapes.

A support region 46 may be provided around the 2 nd through hole 45, and the support region 46 may be configured to support the peripheral region 23 of the mask 30. Thus, the support 40 can support the mask 30 so as to surround the effective region 22 of the mask 30, and thus wrinkles and deformation of the mask 30 can be effectively suppressed. The support region 46 is not intended to pass through the vapor deposition material 98 deposited on the organic EL substrate 92.

Next, the support 40 will be described in more detail with reference to fig. 6B. As shown in fig. 6B, the plurality of 2 nd through holes 45 may penetrate from a 1 st surface 400a to a 2 nd surface 400B, the 1 st surface 400a being one side (in the illustrated example, one side facing the 2 nd surface 30B of the mask 30) along the normal direction N of the support 40 (the normal direction N of the mask 30), and the 2 nd surface 400B being the other side along the normal direction N of the support 40. In the illustrated example, as will be described later in detail, a 1 st concave portion 401 is formed on a 1 st surface 64a of the metal plate 64 by etching, and a 2 nd concave portion 402 is formed on a 2 nd surface 64b of the metal plate 64, where the 1 st surface 64a is one side in the normal direction n of the support body 40 and the 2 nd surface 64b is the other side in the normal direction n of the support body 40. The 1 st recess 401 may be connected to the 2 nd recess 402, thereby forming the 2 nd recess 402 and the 1 st recess 401 to communicate with each other. The 2 nd through hole 45 may be composed of a 2 nd concave portion 402 and a 1 st concave portion 401 connected to the 2 nd concave portion 402.

In the present disclosure, the thickness T1 of the support 40 is 0.20mm or more and 2.0mm or less. The thickness T1 of the support 40 is 0.20mm or more, and thus the rigidity of the vapor deposition mask 20 can be improved. This can suppress the occurrence of wrinkles and deformation in the mask 30. Further, the thickness T1 of the support 40 is 2.0mm or less, and thus, as described later, when the substrate 51 is peeled from the mask 30 joined to the support 40, it is possible to suppress a problem that the substrate 51 cannot be peeled.

The range of the thickness T1 of the support 40 can be determined by group 1 consisting of 0.20mm, 0.50mm, 0.75mm and 1.0mm and/or group 2 consisting of 1.2mm, 1.5mm, 1.8mm and 2.0 mm. The lower limit of the range of the thickness T1 of the support 40 can be determined by any one of the values included in the above group 1. For example, the lower limit of the range of the thickness T1 of the support 40 may be 0.20mm or more, 0.50mm or more, 0.75mm or more, and 1.0mm or more. The upper limit of the range of the thickness T1 of the support body 40 may be determined by any one of the values included in the above group 2. For example, the upper limit of the range of the thickness T1 of the support 40 may be 1.2mm or less, may be 1.5mm or less, may be 1.8mm or less, and may be 2.0mm or less. The range of the thickness T1 of the support 40 can be determined by a combination of any one of the values included in the above group 1 and any one of the values included in the above group 2, and for example, may be 0.20mm or more and 2.0mm or less, may be 0.50mm or more and 1.8mm or less, may be 0.75mm or more and 1.5mm or less, and may be 1.0mm or more and 1.2mm or less. The range of the thickness T1 of the support 40 can be determined by a combination of 2 values of the values included in group 1, and for example, may be 0.20mm or more and 1.0mm or less, may be 0.20mm or more and 0.75mm or less, may be 0.50mm or more and 1.0mm or less, and may be 0.50mm or more and 0.75mm or less. The range of the thickness T1 of the support 40 can be determined by a combination of 2 values of the values included in the above group 2, and for example, may be 1.2mm or more and 2.0mm or less, may be 1.2mm or more and 1.8mm or less, may be 1.5mm or more and 2.0mm or less, and may be 1.5mm or more and 1.8mm or less.

The support 40 preferably contains a material having a shear modulus of 50GPa or more and 65GPa or less. In this case, the shear modulus G can be calculated as follows. That is, as shown in fig. 7A, the lower surface of the elastic body E in the rectangular parallelepiped shape is fixedWhen a force parallel to the upper surface is applied to the elastic body E, the side surface is inclined. In this case, assuming that the surface area of the upper surface of the elastic body E is S, the applied force is F, and the inclination of the side surface is

The shear modulus G can be calculated by the following formula (1).

The shear modulus of the material of the support 40 is 50GPa or more, and thus the rigidity of the vapor deposition mask 20 can be effectively improved. This can suppress the occurrence of wrinkles and deformation in the mask 30. Further, since the shear modulus of the material of the support 40 is 65GPa or less, when the substrate 51 is peeled from the mask 30 bonded to the support 40 as described later, it is possible to suppress a problem that the substrate 51 cannot be peeled.

In this case, first, a test piece having a width (W) of 10mm × and a length (L) of 60mm × and a thickness (t) of 0.5mm is produced from the material constituting the support 40, and then, one end portion in the longitudinal direction of the test piece is fixed to a test apparatus (EG-HT, manufactured by Techno Plus, japan, for example), and the other end portion in the longitudinal direction is set to be a free end, and then, for example, torsional vibration of 10Hz or more and 200Hz or less is applied to the other end portion in an atmosphere at room temperature of 25 ℃.

G＝(K1·L·ω²)/((1-K2·t/W)·W·t³) … type (2)

Here, K1 is a device constant, and K2 is a constant.

The range of shear moduli of the material of the support 40 may be determined by the 1 st group consisting of 50GPa, 52GPa, 54GPa, and 56GPa and/or the 2 nd group consisting of 58GPa, 60GPa, 62GPa, and 65 GPa. The lower limit of the range of the shear modulus of the material of the support 40 can be determined by any one of the values included in the above group 1. For example, the lower limit of the range of the shear modulus of the material of the support 40 may be 50GPa or more, 52GPa or more, 54GPa or more, and 56GPa or more. The upper limit of the range of the shear modulus of the material of the support 40 may be determined by any one of the values included in the above group 2. For example, the upper limit of the range of the shear modulus of the material of the support 40 may be 58GPa or less, 60GPa or less, 62GPa or less, or 65GPa or less. The range of the shear modulus of the material of the support 40 may be determined by a combination of any one of the values included in the group 1 and any one of the values included in the group 2, and may be, for example, 50GPa or more and 65GPa or less, 52GPa or more and 62GPa or less, 54GPa or more and 60GPa or less, and 56GPa or more and 58GPa or less. The range of the shear modulus of the material of the support 40 may be determined by a combination of 2 arbitrary values among the values included in the group 1, and may be, for example, 50GPa or more and 56GPa or less, 50GPa or more and 54GPa or less, 52GPa or more and 56GPa or less, or 52GPa or more and 54GPa or less. The range of the shear modulus of the material of the support 40 may be determined by a combination of 2 values of the values included in the above group 2, and may be, for example, 58GPa or more and 65GPa or less, 58GPa or more and 62GPa or less, 60GPa or more and 65GPa or less, or 60GPa or more and 62GPa or less.

As a main material constituting the support body 40, an iron alloy containing nickel can be used. For example, an invar alloy material containing 34 mass% or more and 38 mass% or less of nickel, or an iron alloy such as a super invar alloy material containing cobalt in addition to nickel can be used. In addition, not limited to this, as a main material constituting the support body 40, for example, an iron alloy other than the above-described iron alloy containing nickel, such as an iron alloy containing chromium, may be used. As the iron alloy containing chromium, for example, an iron alloy called so-called stainless steel can be used. Further, a metal or an alloy other than an iron alloy such as nickel or a nickel-cobalt alloy may be used.

However, as described above, the vapor deposition process can be performed inside the vapor deposition device 90. At this time, as shown in fig. 7B, the vapor deposition process may be performed while moving the crucible 94 and the heater 96 in the surface direction of the vapor deposition mask 20. In this case, as the crucible 94 and the heater 96 move, the portion of the mask 30 of the vapor deposition mask 20 held in the vapor deposition device 90 that faces the heater 96 absorbs the radiant heat supplied from the heater 96, and thermally expands locally. Therefore, a positional deviation occurs due to a difference in dimensional change between the portion and the other portion, and as a result, the dimensional accuracy and positional accuracy of the vapor deposition material adhering to the vapor deposition substrate 92 may be degraded.

In particular, when the vapor deposition device 90 is used in which the heater 96 is moved in the direction perpendicular to the longitudinal direction of the mask 30 in the surface direction of the mask 30, the portion of the mask 30 facing the heater 96 is thin and long, and therefore has a smaller heat capacity than the vapor deposition substrate 92. Therefore, the mask 30 is thermally expanded at the portion between the 1 st through holes 35 adjacent to each other, and the mask 30 is thermally expanded so as to be elongated in the longitudinal direction.

Although a strong magnetic field is applied to the mask 30 of the vapor deposition mask 20, the mask 30 heated by the heater 96 and thermally expanded may be moved by the amount of thermal expansion from the portion of the vapor deposition substrate 92 where the vapor deposition material 98 should originally be vapor deposited. In this case, the vapor deposition material 98 adheres to a portion that is not originally vapor deposited, and there is a problem that the edge of the pattern corresponding to the position of the 1 st through hole 35 of the mask 30 is blurred or the shape of the pattern is enlarged. In particular, the higher the definition of the pattern, the more the problem cannot be ignored, which also becomes a factor limiting the higher definition of the pattern.

In contrast, in the present embodiment, as described above, one 2 nd through hole 45 of the support 40 may correspond to one effective region 22 of the mask 30. Further, a support region 46 may be provided around the 2 nd through hole 45, and the support region 46 may be configured to support the peripheral region 23 of the mask 30. Further, as the material of the support 40, an iron alloy having a shear modulus of 50GPa or more, an invar alloy material containing 34 mass% or more and 38 mass% or less of nickel, a super invar alloy material containing cobalt in addition to nickel, or the like can be used. Thus, the support 40 made of a material having a shear modulus of 50GPa or more can support the mask 30 so as to surround the effective region 22 of the mask 30, and therefore, local thermal expansion of the mask 30 can be suppressed.

Next, the frame 15 will be described in detail. As shown in fig. 3, the frame 15 may be formed into a substantially rectangular frame shape in a plan view, and the frame 15 may be provided with an opening 15a that overlaps the 2 nd through hole 45 of the support body 40 in a plan view. In the present disclosure, the outline defining the opening 15a may surround the entirety of the outline defining the 2 nd through hole 45 in a plan view. At the time of vapor deposition, the vapor deposition material 98 evaporated from the crucible 94 passes through the opening 15a of the frame 15 to reach the vapor deposition mask 20.

The frame 15 may have a size larger than the support 40 in the plane direction, and the outline of the defining frame 15 may surround the outline of the defining support 40 in a plan view. The frame 15 may be attached to the support 40 so that each side of the frame 15 corresponds to each side of the support 40.

Here, as shown in fig. 3 and 4, the mask 30 and the support body 40 may be bonded to each other by a plurality of first bonding portions 19 a. Further, the support body 40 and the frame 15 may be joined to each other by a plurality of 2 nd joining portions 19 b. The 1 st engaging portion 19a may be arranged along the outer edge 30e of the mask 30, and the 2 nd engaging portion 19b may be arranged along the outer edge 40e of the support 40. As described above, the mask 30 and the support 40 may have a substantially rectangular profile in a plan view. Therefore, the joining

portions

19a and 19b may be arranged in a substantially rectangular pattern along the

outer edges

30e and 40e, respectively. In the example shown in fig. 3, the

joint portions

19a and 19b are arranged linearly at a predetermined distance from the

outer edges

30e and 40e, respectively. That is, in the example shown in fig. 3, the

joint portions

19a, 19b are arranged in a direction parallel to the direction in which the

outer edges

30e, 40e extend, respectively.

In the illustrated example, the

joint portions

19a and 19b are arranged at equal intervals along the direction in which the

outer edges

30e and 40e extend. In the present embodiment, the mask 30 and the support 40, and the support 40 and the frame 15 may be joined to each other by spot welding. The mask 30 and the support 40, and the mask 30 and the frame 15 may be joined to each other by other fixing means such as an adhesive, for example.

Next, a method of manufacturing the vapor deposition mask device 10 will be described. First, a method of manufacturing the vapor deposition mask 20 of the vapor deposition mask device 10 will be described.

First, a mask 30 having a plating layer 31 bonded to a base material 51 (see fig. 8A) is prepared, and the plating layer 31 has a 1 st through hole 35 formed therein. At this time, first, the base material 51 is prepared. The material constituting the base material 51 and the thickness of the base material 51 are not particularly limited as long as they have insulation properties and appropriate strength. As described later, when the mask 30 and the support 40 or the support 40 and the frame 15 are fixed by welding through irradiation of laser light to the substrate 51, a glass material having high light transmittance can be preferably used as a material constituting the substrate 51. When the mask 30 and the support 40 or the support 40 and the frame 15 are fixed to each other with an adhesive, glass, synthetic resin, metal, or the like can be used as a material constituting the substrate 51. In this case, the base material 51 may not have light transmittance. Here, an example in which a glass material is used as the substrate 51 will be described.

Next, as shown in fig. 8A, a conductive material layer 52a made of a conductive material is formed on the base 51. The conductive material layer 52a is a layer patterned into the conductive layer 52. As a material constituting the conductive material layer 52a, a material having conductivity such as a metal material or an oxide conductive material is suitably used. Examples of the metal material include chromium and copper. As a material constituting the conductive material layer 52a, a material having high adhesiveness to the 1 st resist pattern 53 described later is preferably used. For example, when the 1 st resist pattern 53 is formed by patterning a film called a dry film such as a resist film containing an acrylic photocurable resin, copper is preferably used as a material constituting the conductive material layer 52 a.

The conductive material layer 52a is formed by, for example, sputtering, electroless plating, or the like. When the conductive material layer 52a is to be formed thick, it takes a long time to form the conductive material layer 52 a. On the other hand, when the thickness of the conductive material layer 52a is too thin, the resistance value increases, and it is difficult to form the 1 st metal layer 32 by the electrolytic plating treatment. Therefore, for example, the thickness of the conductive material layer 52a is preferably in the range of 0.050 μm to 3.0 μm.

The range of the thickness of the conductive material layer 52a may be determined by the 1 st group consisting of 0.050 μm, 0.075 μm, 0.10 μm, and 0.50 μm and/or the 2 nd group consisting of 1.0 μm, 1.5 μm, 2.0 μm, and 3.0 μm. The lower limit of the range of the thickness of the conductive material layer 52a may be determined by any one of the values included in the above group 1. For example, the lower limit of the range of the thickness of the conductive material layer 52a may be 0.050 μm or more, 0.075 μm or more, 0.10 μm or more, and 0.50 μm or more. The upper limit of the range of the thickness of the conductive material layer 52a may be determined by any one of the values included in the above group 2. For example, the upper limit of the range of the thickness of the conductive material layer 52a may be 1.0 μm or less, 1.5 μm or less, 2.0 μm or less, and 3.0 μm or less. The range of the thickness of the conductive material layer 52a can be determined by a combination of any one of the values included in the above group 1 and any one of the values included in the above group 2, and for example, may be 0.050 μm or more and 3.0 μm or less, may be 0.075 μm or more and 2.0 μm or less, may be 0.10 μm or more and 1.5 μm or less, and may be 0.50 μm or more and 1.0 μm or less. The range of the thickness of the conductive material layer 52a can be determined by a combination of 2 values of the values included in the group 1, and may be, for example, 0.050 μm or more and 0.50 μm or less, 0.050 μm or more and 0.10 μm or less, 0.075 μm or more and 0.50 μm or less, or 0.075 μm or more and 0.10 μm or less. The range of the thickness of the conductive material layer 52a can be determined by a combination of 2 values of the values included in the above group 2, and for example, may be 1.0 μm or more and 3.0 μm or less, may be 1.0 μm or more and 2.0 μm or less, may be 1.5 μm or more and 3.0 μm or less, and may be 1.5 μm or more and 2.0 μm or less.

Next, as shown in fig. 8B, a 1 st resist pattern 53 having a predetermined pattern is formed on the conductive material layer 52 a. As a method for forming the 1 st resist pattern 53, photolithography or the like can be used as in the case of the 2 nd resist pattern 55 described later. As a method of irradiating the material for the 1 st resist pattern 53 with light in a predetermined pattern, the following method can be employed: a method of using an exposure mask that transmits exposure light in a predetermined pattern, a method of scanning exposure light in a predetermined pattern relative to a material for the 1 st resist pattern 53, and the like. Then, as shown in fig. 8C, a portion of the conductive material layer 52a not covered with the 1 st resist pattern 53 is removed by etching. Next, as shown in fig. 8D, the 1 st resist pattern 53 is removed. This makes it possible to obtain a patterned substrate 50 on which a conductive layer 52 is formed, the conductive layer 52 having a pattern corresponding to the 1 st metal layer 32.

Next, the plating layer 31 is deposited on the conductive layer 52 by using the base material 51 (pattern substrate 50) on which the conductive layer 52 is formed.

Next, a 1 st film forming step of forming the 1 st metal layer 32 using the pattern substrate 50 will be described. Here, the 1 st metal layer 32 having the 1 st opening 30c in a predetermined pattern is formed on the insulating base material 51. Specifically, the following first plating step is performed: the 1 st plating solution is supplied onto the base material 51 on which the conductive layer 52 is formed, and the 1 st metal layer 32 is deposited on the conductive layer 52. For example, the base material 51 on which the conductive layer 52 is formed is immersed in a plating bath filled with the 1 st plating solution. As a result, as shown in fig. 9A, the 1 st metal layer 32 having the 1 st openings 30c formed in a predetermined pattern can be obtained on the base material 51. The thickness of the 1 st metal layer 32 may be 5.0 μm or less, for example. The formation of the 1 st metal layer 32 on the substrate 51 is not limited to the formation of the 1 st metal layer 32 directly on the substrate 51, and includes a case where the 1 st metal layer 32 is formed on the substrate 51 with another layer such as the conductive layer 52 interposed therebetween.

In addition, in terms of the characteristics of the plating treatment, as shown in fig. 9A, the 1 st metal layer 32 is formed not only in a portion overlapping with the conductive layer 52 when viewed in the normal direction of the base 51 but also in a portion not overlapping with the conductive layer 52. This is because the 1 st metal layer 32 is further deposited on the surface of the 1 st metal layer 32 deposited in the portion overlapping with the end portion 54 of the conductive layer 52. As a result, as shown in fig. 9A, the end 33 of the 1 st opening 30c is located at a portion that does not overlap the conductive layer 52 when viewed along the normal direction of the substrate 51.

The specific method of the 1 st plating step is not particularly limited as long as the 1 st metal layer 32 can be deposited on the conductive layer 52. For example, the 1 st plating step may be performed as a so-called electrolytic plating step in which the 1 st metal layer 32 is deposited on the conductive layer 52 by applying a current to the conductive layer 52. Alternatively, the 1 st plating step may be an electroless plating step. In addition, when the first plating step 1 is an electroless plating step, an appropriate catalyst layer may be provided on the conductive layer 52. Alternatively, the conductive layer 52 may be configured to function as a catalyst layer. When the electrolytic plating step is performed, a catalyst layer may be provided on the conductive layer 52.

The composition of the 1 st plating solution used is appropriately determined in accordance with the characteristics required for the 1 st metal layer 32. For example, as the 1 st plating solution, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used. For example, a mixed solution of a solution containing nickel sulfamate and nickel bromide and a solution containing ferrous sulfamate can be used. Various additives may be contained in the plating solution. As the additive, a pH buffer such as boric acid, a primary brightening agent (photos swamp agent) such as sodium saccharin, a secondary brightening agent such as butynediol, propiolic alcohol, coumarin, formaldehyde, thiourea, an antioxidant, or the like can be used.

Next, a 2 nd film forming step of forming a 2 nd metal layer 37 having a 2 nd opening 30d communicating with the 1 st opening 30c on the 1 st metal layer 32 is performed. At this time, first, a 2 nd resist pattern 55 is formed on the base material 51 and the 1 st metal layer 32 with a predetermined gap 56 therebetween. Fig. 9B is a cross-sectional view showing the 2 nd resist pattern 55 formed on the base material 51. As shown in fig. 9B, the resist forming step is performed so that the 1 st opening 30c of the 1 st metal layer 32 is covered with the 2 nd resist pattern 55 and the gap 56 of the 2 nd resist pattern 55 is positioned on the 1 st metal layer 32.

Next, an example of the resist forming step will be described. First, a negative resist film is formed by attaching a dry film on the substrate 51 and the 1 st metal layer 32. Examples of the dry film include a dry film containing an acrylic photocurable resin such as RY3310 manufactured by hitachi chemical corporation. Alternatively, the material for the 2 nd resist pattern 55 may be applied to the base material 51 and then, if necessary, sintered to form a resist film. Next, an exposure mask which does not transmit light through a region to be the gap 56 in the resist film is prepared, and the exposure mask is disposed on the resist film. Then, the exposure mask and the resist film are sufficiently bonded by vacuum bonding. As the resist film, a positive resist film may be used. In this case, an exposure mask that transmits light through a region of the resist film to be removed is used as the exposure mask.

Then, the resist film is exposed through an exposure mask. Further, the resist film is developed to form an image on the exposed resist film. In order to more firmly adhere the 2 nd resist pattern 55 to the base material 51 and the 1 st metal layer 32, a heat treatment step of heating the 2 nd resist pattern 55 may be performed after the developing step.

Next, a 2 nd metal layer 37 is formed on the 1 st metal layer 32. At this time, the 2 nd metal layer 37 is formed on the 1 st metal layer 32, and the 2 nd metal layer 37 is provided with the 2 nd opening 30d communicating with the 1 st opening 30 c. Specifically, a 2 nd plating solution is supplied to the gap 56 of the 2 nd resist pattern 55, and the 2 nd metal layer 37 is deposited on the 1 st metal layer 32. For example, the base material 51 on which the 1 st metal layer 32 is formed is immersed in a plating tank filled with the 2 nd plating solution. Thereby, as shown in fig. 9C, the 2 nd metal layer 37 can be obtained on the 1 st metal layer 32. The thickness of the 2 nd metal layer 37 may be set to be 2.0 μm or more and 50 μm or less of the thickness T0 (see fig. 6) of the plating layer 31 of the vapor deposition mask 20 in the effective region 22.

The specific method of the 2 nd plating step is not particularly limited as long as the 2 nd metal layer 37 can be deposited on the 1 st metal layer 32. For example, the 2 nd plating treatment step may be performed as a so-called electrolytic plating treatment step of depositing the 2 nd metal layer 37 on the 1 st metal layer 32 by applying a current to the 1 st metal layer 32. Alternatively, the 2 nd plating treatment step may be an electroless plating treatment step. In addition, when the 2 nd plating treatment step is an electroless plating treatment step, an appropriate catalyst layer may be provided on the 1 st metal layer 32. When the electrolytic plating treatment step is performed, a catalyst layer may be provided on the 1 st metal layer 32.

As the 2 nd plating solution, the same plating solution as the 1 st plating solution described above can be used. Alternatively, a plating solution different from the 1 st plating solution may be used as the 2 nd plating solution. When the composition of the 1 st plating solution is the same as the composition of the 2 nd plating solution, the composition of the metal constituting the 1 st metal layer 32 is also the same as the composition of the metal constituting the 2 nd metal layer 37.

In fig. 9C, the example in which the 2 nd plating process step is continued until the upper surface of the 2 nd resist pattern 55 and the upper surface of the 2 nd metal layer 37 coincide is shown, but the present invention is not limited thereto. The 2 nd plating process may be stopped in a state where the upper surface of the 2 nd metal layer 37 is located below the upper surface of the 2 nd resist pattern 55.

Then, a removal step of removing the 2 nd resist pattern 55 is performed. The removing step is performed by immersing the laminate of the pattern substrate 50, the 1 st metal layer 32, the 2 nd metal layer 37, and the 2 nd resist pattern 55 in, for example, an alkaline stripping solution. Thereby, as shown in fig. 9D, the 2 nd resist pattern 55 can be peeled off from the pattern substrate 50, the 1 st metal layer 32, and the 2 nd metal layer 37. Thus, the mask 30 bonded to the base material 51 is obtained. In this case, the 2 nd metal layer 37 having the 2 nd openings 30d formed in a predetermined pattern can be obtained on the 1 st metal layer 32. Further, the 1 st opening 30c and the 2 nd opening 30d communicate with each other, thereby forming the 1 st through hole 35 penetrating the mask 30. In this way, the plating layer 31 is deposited on the conductive layer 52, thereby forming the 1 st through holes 35.

Further, the vapor deposition mask 20 bonded to the substrate 51 is prepared, and the support 40 having the 2 nd through-hole 45 formed therein is prepared in parallel therewith. At this time, first, a resist film containing a photosensitive resist material is formed on the 1 st surface 64a and the 2 nd surface 64b of the metal plate 64. Next, the resist film is exposed and developed. As a result, as shown in fig. 10A, the 1 st resist pattern 65a is formed on the 1 st surface 64a of the metal plate 64, and the 2 nd resist pattern 65b is formed on the 2 nd surface 64b of the metal plate 64.

Next, as shown in fig. 10B, a 1 st surface etching step is performed, and in the 1 st surface etching step, a 1 st etching solution is used to etch a region of the 1 st surface 64a of the metal plate 64 not covered with the 1 st resist pattern 65 a. Thus, the 1 st surface 64a of the metal plate 64 is formed with a plurality of 1 st recesses 401. As the 1 st etching solution, for example, an etching solution containing an iron chloride solution and hydrochloric acid is used.

Next, as shown in fig. 10C, a 2 nd surface etching step is performed, in which a region not covered with the 2 nd resist pattern 65b in the 2 nd surface 64b of the metal plate 64 is etched in the 2 nd surface etching step, and a 2 nd recessed portion 402 is formed in the 2 nd surface 64 b. The 2 nd surface etching step is performed until the 1 st recess 401 and the 2 nd recess 402 communicate with each other to form the 2 nd through hole 45. As the 2 nd etching solution, for example, an etching solution containing an iron chloride solution and hydrochloric acid is used as in the 1 st etching solution. In the 2 nd surface etching step, as shown in fig. 10C, the 1 st concave portion 401 may be covered with a resin 69 having resistance to the 2 nd etching liquid.

Then, as shown in fig. 10D, the resin 69 is removed from the metal plate 64. The resin 69 can be removed by using an alkaline stripping liquid, for example. In the case of using an alkaline stripping solution, as shown in fig. 10D, the resist

patterns

65a, 65b are also removed simultaneously with the resin 69. After the resin 69 is removed, the resist

patterns

65a and 65b may be removed separately from the resin 69 using a stripping liquid different from the stripping liquid used for stripping the resin 69. This can provide the support 40 having the 2 nd through-hole 45 formed therein.

The thickness T1 (see fig. 4) of the support 40 can be set to 0.20mm to 2.0 mm. The thickness T1 of the support 40 is 0.20mm or more, and thus the rigidity of the vapor deposition mask 20 can be improved. This can suppress the occurrence of wrinkles and deformation in the mask 30. Further, the thickness T1 of the support 40 is 2.0mm or less, and thus, as described later, when the substrate 51 is peeled from the mask 30 joined to the support 40, it is possible to suppress a problem that the substrate 51 cannot be peeled.

The support 40 preferably contains a material having a shear modulus of 50GPa or more and 65GPa or less. The shear modulus of the material of the support 40 is 50GPa or more, and thus the rigidity of the vapor deposition mask 20 can be effectively improved. This can suppress the occurrence of wrinkles and deformation in the mask 30. Further, since the shear modulus of the material of the support 40 is 65GPa or less, when the substrate 51 is peeled from the mask 30 bonded to the support 40, it is possible to suppress a problem that the substrate 51 cannot be peeled. As a material constituting such a support 40, for example, an iron alloy such as an invar alloy material containing 34 mass% or more and 38 mass% or less of nickel, or a super invar alloy material containing cobalt in addition to nickel can be used.

Next, a bonding step of bonding the mask 30 and the support 40 is performed. In this bonding step, the support 40 and the mask 30 are bonded so that the 2 nd through-hole 45 of the support 40 overlaps the 1 st through-hole 35 of the mask 30 in a plan view. At this time, first, as shown in fig. 11A, the mask 30 is disposed on the support 40. Next, the mask 30 is irradiated with the laser La from the substrate 51 side through the substrate 51, a part of the 2 nd metal layer 37 and a part of the support 40 are melted by heat generated by the irradiation with the laser La, and the mask 30 and the support 40 are joined to each other by welding. As the laser La, for example, YAG laser generated by a YAG laser device can be used. As the YAG laser device, for example, a laser device having a crystal obtained by adding Nd (neodymium) to YAG (yttrium aluminum garnet) as an oscillation medium can be used.

Thereby, as shown in fig. 11B, the following 1 st intermediate member 70a is obtained: a first bonding portion (19 a) for bonding the mask (30) and the support (40) is formed, and the mask (30) is bonded to the substrate (51) and the support (40) is bonded to the mask (30). The mask 30 and the support 40 may be bonded to each other by other fixing means such as an adhesive, or the mask 30 and the support 40 may be bonded to each other by plating treatment.

Next, a peeling step of peeling the substrate 51 from the mask 30 of the 1 st intermediate member 70a is performed. As a result, as shown in fig. 11C, a vapor deposition mask 20 can be obtained, the vapor deposition mask 20 including: a mask 30 having a plating layer 31 in which a plurality of 1 st through holes 35 are formed; and a support 40 joined to the mask 30 and having a 2 nd through hole 45 formed therein so as to overlap the 1 st through holes 35 in a plan view. In this case, as described above, the thickness T1 of the support body 40 may be 2.0mm or less. Thus, when the substrate 51 is peeled from the mask 30 of the 1 st intermediate member 70a, a problem that the substrate 51 cannot be peeled can be suppressed. That is, when the substrate 51 is peeled from the mask 30, the substrate 51 is peeled while elastically deforming the support 40 so that wrinkles or plastic deformation does not occur in the mask 30. On the other hand, when the thickness T1 of the support 40 is too large, the rigidity of the support 40 is too large, and thus it may be difficult to elastically deform the support 40. On the other hand, by setting the thickness T1 of the support 40 to 2.0mm or less, it is possible to suppress the support 40 from being excessively rigid and to elastically deform the support 40. Therefore, when the substrate 51 is peeled from the mask 30 of the 1 st intermediate member 70a, a problem that the substrate 51 cannot be peeled can be suppressed.

Next, a method of manufacturing the vapor deposition mask device 10 will be described.

First, a vapor deposition mask 20 is produced by the method shown in fig. 8A to 11C, for example.

Next, the vapor deposition mask 20 is bonded to the frame 15. In this case, the frame 15 and the support 40 are joined so that the opening 15a of the frame 15 overlaps the 2 nd through hole 45 of the support 40 in a plan view. At this time, as shown in fig. 12A, the vapor deposition mask 20 is disposed on the frame 15 so that the support 40 and the frame 15 are in contact with each other. Next, as shown in fig. 12B, the support 40 is irradiated with the laser La, a part of the support 40 and a part of the frame 15 are melted by heat generated by the irradiation with the laser La, and the support 40 and the frame 15 are joined to each other by welding. At this time, in order to suppress the occurrence of flexure in the vapor deposition mask 20 and to adjust the position of the effective region 22 of the mask 30, the support 40 and the frame 15 are joined to each other in a state where the vapor deposition mask 20 is stretched in the surface direction thereof.

As a result, as shown in fig. 12C, the following vapor deposition mask device 10 was obtained: the second bonding portion 19b for bonding the support 40 and the frame 15 is formed, and includes the vapor deposition mask 20 and the frame 15, and the frame 15 is bonded to the support 40 of the vapor deposition mask 20 and is provided with an opening 15a overlapping the second through hole 45 in a plan view. The support body 40 and the frame 15 may be joined to each other by other fixing means such as an adhesive, for example.

Next, a vapor deposition method of a vapor deposition material for depositing a vapor deposition material 98 on the organic EL substrate 92 using the vapor deposition mask device 10 obtained through the above-described steps will be described mainly with reference to fig. 13A to 14.

First, as shown in fig. 13A, the vapor deposition mask device 10 obtained through the above-described steps is prepared. At this time, a crucible 94 containing a vapor deposition material 98 and a heater 96 are prepared, and a vapor deposition device 90 is prepared.

Further, an organic EL substrate 92 is prepared.

Next, as shown in fig. 13B, the organic EL substrate 92 is placed on the mask 30 of the vapor deposition mask device 10. At this time, for example, the alignment marks, not shown, of the organic EL substrate 92 and the alignment marks, not shown, of the vapor deposition mask 20 are directly observed, and the organic EL substrate 92 is set in the vapor deposition mask device 10 while the alignment marks are positioned so as to overlap each other.

Next, the vapor deposition material 98 is vapor deposited on the organic EL substrate 92 provided on the mask 30 of the vapor deposition mask device 10. At this time, for example, as shown in fig. 14, a magnet 93 is disposed on a surface of the organic EL substrate 92 opposite to the vapor deposition mask device 10. By providing the magnet 93 in this manner, the vapor deposition mask device 10 can be attracted toward the magnet 93 by magnetic force, and the mask 30 can be brought into close contact with the organic EL substrate 92. Next, the inside of the vapor deposition device 90 is evacuated by an evacuation unit not shown so that the inside of the vapor deposition device 90 is in a high vacuum state. Next, the heater 96 heats the crucible 94 to evaporate the evaporation material 98. The vapor deposition material 98 evaporated from the crucible 94 and reaching the vapor deposition mask device 10 passes through the 2 nd through hole 45 of the support 40 and the 1 st through hole 35 of the mask 30 and adheres to the organic EL substrate 92 (see fig. 1).

In this way, the vapor deposition material 98 is vapor deposited on the organic EL substrate 92 in a desired pattern corresponding to the position of the 1 st through hole 35 of the mask 30.

According to the present embodiment, the vapor deposition mask 20 includes: a mask 30 having a plating layer 31 formed with a 1 st through hole 35; and a support 40 joined to the mask 30, having a 2 nd through-hole 45 formed therein overlapping the 1 st through-hole 35 in a plan view, the support 40 having a thickness of 0.20mm to 2.0 mm. In this way, the thickness T1 of the support 40 is 0.20mm or more, and thus the rigidity of the vapor deposition mask 20 can be improved. This can suppress the occurrence of wrinkles and deformation in the mask 30. Further, the thickness T1 of the support 40 is 2.0mm or less, whereby when the substrate 51 is peeled from the mask 30 joined to the support 40, a problem that the substrate 51 cannot be peeled can be suppressed.

Further, according to the present embodiment, the support 40 contains a material having a shear modulus of 50GPa or more and 65GPa or less. In this way, the shear modulus of the material of the support 40 is 50GPa or more, and thus the rigidity of the vapor deposition mask 20 can be effectively improved. This can suppress the occurrence of wrinkles and deformation in the mask 30. Further, since the shear modulus of the material of the support 40 is 65GPa or less, when the substrate 51 is peeled from the mask 30 bonded to the support 40, it is possible to suppress a problem that the substrate 51 cannot be peeled.

In addition, various modifications can be made to the above embodiment. Next, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for corresponding portions in the above-described embodiments are used for portions that can be configured in the same manner as in the above-described embodiments, and redundant description is omitted. Note that, in the case where it is found that the operational effects obtained in the above-described embodiment are obtained also in the modification, the description thereof may be omitted.

In the above-described embodiment, an example in which a single mask 30 having a plurality of effective regions 22 is used for the vapor deposition mask 20 has been described. However, the present invention is not limited to this, and a vapor deposition mask 20 in which a plurality of masks 30 are allocated to the frame 15 may be used as shown in fig. 15. In fig. 15, the 2 nd through hole 45 of the support body 40 is not shown to clarify the drawing.

In the above-described embodiment, the plating layer 31 of the mask 30 is formed to have a 2-layer structure, and the plating layer 31 includes the 1 st metal layer 32 and the 2 nd metal layer 37 provided on the 1 st metal layer 32. However, the present invention is not limited to this, and the plating layer 31 may be formed of a 1-layer structure without forming the 2 nd metal layer 37 on the 1 st metal layer 32.

In the above-described embodiment, an example in which the support body 40 is formed of a single member is described. However, the support 40 may have a plurality of layers bonded to each other as shown in fig. 16. In the present modification, the support 40 may have a 1 st layer 40a bonded to the mask 30 and a 2 nd layer 40b bonded to the 1 st layer 40 a. In this case, the 2 nd through-hole 45 of the support 40 may penetrate the 1 st layer 40a and the 2 nd layer 40 b. That is, the 1 st opening 40c may be provided in a predetermined pattern in the 1 st layer 40a of the support 40, and the 2 nd opening 40d communicating with the 1 st opening 40c may be provided in the 2 nd layer 40 b. Further, the 1 st opening 40c and the 2 nd opening 40d communicate with each other, and thereby the 2 nd through hole 45 penetrating the 1 st layer 40a and the 2 nd layer 40b of the support body 40 can be defined.

In this way, since the support 40 includes the 1 st layer 40a and the 2 nd layer 40b, the support 40 having the desired thickness T1 can be easily obtained. That is, in forming the 2 nd through-hole 45 of the support 40, the metal plate is patterned by photolithography including an exposure step and a development step as described above. At this time, in the case where the metal plate has a thick thickness, it may be difficult to pattern the metal plate into a desired pattern. On the other hand, by providing the support 40 with the 1 st layer 40a and the 2 nd layer 40b, the 1 st opening 40c of the 1 st layer 40a and the 2 nd opening 40d of the 2 nd layer 40b can be formed before the 1 st layer 40a and the 2 nd layer 40b are joined to each other. Then, by joining the 1 st layer 40a formed with the 1 st opening 40c and the 2 nd layer 40b formed with the 2 nd opening 40d to each other, the support 40 formed with the 2 nd through hole 45 and having a sufficient thickness T1 can be easily obtained.

Further, these 1 st and 2

nd layers

40a and 40b may be joined to each other by an adhesive, solder, or soldering. In this case, as in the above-described 2 nd joining portion 19b (see fig. 3 and 4), the joining portions (not shown) may be arranged in a direction parallel to the direction in which the outer edge 40e of the support 40 extends. In this case, the bonding surface 47a of the 1 st layer 40a and the 2 nd layer 40b is preferably covered with the metal 48 from the side (i.e., in the left-right direction shown in fig. 16). In this case, for example, the metal 48 may be formed by performing overlay welding so as to cover the bonding surface 47a from the side by welding, or the metal 48 may be formed by depositing the metal so as to cover the bonding surface 47a from the side by plating. When the vapor deposition material 98 is vapor deposited on the organic EL substrate 92 by the vapor deposition mask device 10, the vapor deposition mask 20 of the vapor deposition mask device 10 may be repeatedly used. In this case, each time the vapor deposition mask 20 is used, the vapor deposition mask 20 is cleaned, and the vapor deposition material 98 attached to the vapor deposition mask 20 is removed. On the other hand, when the bonding surface 47a between the 1 st layer 40a and the 2 nd layer 40b is exposed, a cleaning liquid for cleaning the vapor deposition material 98 may enter a gap between the 1 st layer 40a and the 2 nd layer 40b when cleaning the vapor deposition mask 20. In the case where the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92 using the vapor deposition mask 20 in which a cleaning liquid enters the gap between the 1 st layer 40a and the 2 nd layer 40b, the cleaning liquid entering the gap between the 1 st layer 40a and the 2 nd layer 40b may adhere to the organic EL substrate 92. In this case, various problems such as failure to obtain a desired contrast ratio may occur in the organic EL substrate 92.

In contrast, in the present modification, the bonding surface 47a of the 1 st layer 40a and the 2 nd layer 40b is covered with the metal 48 from the side. This can suppress the cleaning liquid from entering the gap between the 1 st layer 40a and the 2 nd layer 40 b.

In order to produce such a support 40, first, the 1 st layer 40a bonded to the mask 30 and the 2 nd layer 40b bonded to the 1 st layer 40a are prepared. In this case, first, a metal plate is prepared, and the metal plate is patterned by photolithography including an exposure step and a development step. As a result, as shown in fig. 17A, the 1 st opening 40c is formed in the 1 st layer 40a, and the 2 nd opening 40d is formed in the 2 nd layer 40 b.

Next, as shown in fig. 17B, the 1 st layer 40a and the 2 nd layer 40B are bonded to each other. At this time, the 1 st layer 40a and the 2 nd layer 40b are bonded to each other by an adhesive, solder, or soldering. For example, in the case where the 1 st layer 40a and the 2 nd layer 40b are joined to each other by welding, the 1 st layer 40a and the 2 nd layer 40b are superposed on each other, the 1 st layer 40a or the 2 nd layer 40b is irradiated with the laser La, a part of the 1 st layer 40a and a part of the 2 nd layer 40b are melted by heat generated by the irradiation with the laser La, and the 1 st layer 40a and the 2 nd layer 40b are joined to each other by welding.

Next, as shown in fig. 17C, the bonding surface 47a of the 1 st layer 40a and the 2 nd layer 40b is covered with a metal 48. In this case, for example, the metal 48 may be deposited by welding so as to cover the joint surface 47a from the side (i.e., the left-right direction shown in fig. 17C), or the metal 48 may be formed by depositing the metal by plating so as to cover the joint surface 47a from the side. Thus, the support 40 is obtained.

In the present modification, as shown in fig. 18A, each

layer

40a, 40b may be completely covered with the metal 48 from the side (i.e., the left-right direction shown in fig. 18A), or the lower surface of the 2 nd layer 40b may be covered with the metal 48.

In the present modification, the support 40 may have 3 or more layers. For example, as shown in fig. 18B, the support body 40 may further include a 3 rd layer 40f joined to the 2 nd layer 40B. The 2 nd layer 40b and the 3 rd layer 40f may be bonded to each other by an adhesive, solder, or soldering. In this case, the 2 nd through-hole 45 of the support 40 may penetrate the

layers

40a, 40b, and 40 f. That is, the 3 rd layer 40f of the support body 40 may be provided with the 3 rd opening 40g communicating with the 2 nd opening 40d of the 2 nd layer 40 b. Then, the 1 st opening 40c, the 2 nd opening 40d, and the 3 rd opening 40g communicate with each other, whereby the 2 nd through hole 45 penetrating the 1 st layer 40a, the 2 nd layer 40b, and the 3 rd layer 40f of the support body 40 can be defined. In this case, the bonding surface 47a of the 1 st layer 40a and the 2 nd layer 40B is also preferably covered with the metal 48 from the side (i.e., in the left-right direction shown in fig. 18B). Further, the bonding surface 47B of the 2 nd layer 40B and the 3 rd layer 40f is preferably covered with a metal 48 from the side (i.e., in the left-right direction shown in fig. 18B). In this case, for example, the metal 48 may be formed by performing overlay welding so as to cover the bonding surfaces 47a and 47b from the sides by welding, or the metal 48 may be formed by depositing metal so as to cover the bonding surfaces 47a and 47b from the sides by plating.

In the case of producing the support 40 shown in fig. 18B, a 3 rd layer 40f bonded to the 2 nd layer 40B is also prepared. In this case, similarly to the 1 st layer 40a and the 2 nd layer 40b, a metal plate is prepared, and the metal plate is patterned by photolithography including an exposure step and a development step. As a result, as shown in fig. 18C, the 3 rd opening 40g is formed in the 3 rd layer 40 f.

Next, as shown in fig. 18D, the 2 nd layer 40b and the 3 rd layer 40f bonded to the 1 st layer 40a are bonded to each other. At this time, the 2 nd layer 40b and the 3 rd layer 40f are bonded to each other by an adhesive, solder, or soldering. For example, in the case where the 2 nd layer 40b and the 3 rd layer 40f are joined to each other by welding, the 2 nd layer 40b and the 3 rd layer 40f are superposed on each other, the 3 rd layer 40f is irradiated with the laser La, a part of the 3 rd layer 40f and a part of the 2 nd layer 40b are melted by heat generated by the irradiation with the laser La, and the 2 nd layer 40b and the 3 rd layer 40f are joined to each other by welding.

Next, as shown in fig. 18E, the bonding surface 47a of the 1 st layer 40a and the 2 nd layer 40b is covered with a metal 48. The joint surface 47b between the 2 nd layer 40b and the 3 rd layer 40f is covered with a metal 48. In this case, for example, the metal 48 may be deposited by welding so as to cover the bonding surfaces 47a and 47b from the sides (i.e., the left-right direction shown in fig. 18E), or the metal 48 may be formed by depositing the metal by plating so as to cover the bonding surfaces 47a and 47b from the sides. Thus, the support 40 is obtained.

In the present modification, as shown in fig. 18F, each of the

layers

40a, 40b, and 40F may be completely covered with the metal 48 from the side (i.e., the left-right direction shown in fig. 18C), or the lower surface of the 3 rd layer 40F may be covered with the metal 48.

In the above-described embodiment, an example in which the 2 nd through-hole 45 of the support 40 has a size larger than the effective region 22 of the mask 30 in a plan view has been described. However, the 2 nd through-hole 45 may have a size smaller than the effective region 22 in a plan view. In addition, a part of the active regions 22 of the plurality of active regions 22 may also be covered by the support region 46.

In the present embodiment, the plating layer 31 is deposited on the conductive layer 52 in the example described above for the plating layer 31. However, the present invention is not limited to this, and the plating layer 31 may be deposited directly on the base material 51. In this case, first, a base material 51 made of a material having electrical conductivity, for example, stainless steel or brass steel, is prepared. Next, as shown in fig. 19A, a 1 st resist pattern 53 having a predetermined pattern is formed on the conductive base material 51. Next, as shown in fig. 19B, a 1 st plating solution is supplied onto the substrate 51 on which the 1 st resist pattern 53 is formed, and the plating layer 31 is deposited on the substrate 51. Then, as shown in fig. 19C, the plating layer 31 can be deposited on the base material 51 by removing the 1 st resist pattern 53. Although not shown, the plating layer 31 may have a 2 nd metal layer 37 provided on the 1 st metal layer 32 and be formed of a 2-layer structure.

Although several modifications of the above embodiment have been described above, it is needless to say that a plurality of modifications can be applied by appropriately combining them.

Claims

1. A vapor deposition mask is characterized by comprising:

a mask having a plating layer formed with a 1 st through hole; and

a support joined to the mask and having a 2 nd through-hole overlapping the 1 st through-hole in a plan view,

the support has a thickness of 0.20mm to 2.0 mm.

2. The vapor deposition mask according to claim 1,

the support has a 1 st layer bonded to the mask and a 2 nd layer bonded to the 1 st layer,

the 2 nd through-hole penetrates the 1 st layer and the 2 nd layer.

3. The vapor deposition mask according to claim 2,

the 1 st and 2 nd layers are joined to each other by an adhesive, solder or soldering.

4. The vapor deposition mask according to claim 2,

the bonding surface between the 1 st layer and the 2 nd layer is covered with metal from the side.

5. The vapor deposition mask according to claim 3,

6. The vapor deposition mask according to claim 4,

the metal is formed by a plating process.

7. The vapor deposition mask according to claim 5,

the metal is formed by a plating process.

8. The vapor deposition mask according to any one of claims 2 to 7, wherein the mask is a mask having a thickness,

the support also has a layer 3 bonded to the layer 2.

9. The vapor deposition mask according to claim 8,

the 2 nd and 3 rd layers are joined to each other by an adhesive, solder or soldering.

10. The vapor deposition mask according to claim 8,

the bonding surface between the 2 nd layer and the 3 rd layer is covered with metal from the side.

11. The vapor deposition mask according to claim 9,

12. The vapor deposition mask according to claim 10,

the metal is formed by a plating process.

13. The vapor deposition mask according to any one of claims 1 to 7, wherein the mask is a mask having a thickness,

the support contains a material having a shear modulus of 50GPa or more and 65GPa or less.

14. A vapor deposition mask device is characterized by comprising:

the vapor deposition mask according to any one of claims 1 to 13; and

and a frame joined to the support of the vapor deposition mask and provided with an opening overlapping the 2 nd through hole in a plan view.