CN210916234U - Tungsten-titanium alloy target material for semiconductor chip - Google Patents
Tungsten-titanium alloy target material for semiconductor chip Download PDFInfo
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- CN210916234U CN210916234U CN201921806050.3U CN201921806050U CN210916234U CN 210916234 U CN210916234 U CN 210916234U CN 201921806050 U CN201921806050 U CN 201921806050U CN 210916234 U CN210916234 U CN 210916234U
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Abstract
The utility model discloses a tungsten titanium alloy target for semiconductor chip, including target and backplate, be provided with the wedge arch on the lower terminal surface of target, be provided with the wedge recess on the mountain terminal surface of backplate, the protruding joint of wedge is in the wedge recess, and the left and right sides of backplate is provided with the curb plate that upwards stretches out, the curb plate passes through connecting pin fixed connection with the lateral wall of target, still be provided with the cooling water course in the backplate, the cooling water course is including going upward the water course, condensation chamber and down water course, going upward the water course, condensation chamber and down water course constitute end to end's intercommunication water course. The utility model relates to a rational in infrastructure, the processing degree of difficulty is low, the tungsten titanium alloy target of semiconductor chip that the radiating effect is good.
Description
Technical Field
The utility model relates to a sputter target technical field specifically is a tungsten titanium alloy target for semiconductor chip.
Background
As a brand-new surface treatment technology, the physical vapor deposition technology has high technological content and zero pollution, can greatly improve the service performance and the service life of the tool, and is widely regarded by people. The arc ion plating technology, which is the most successful physical vapor deposition technology at present, is widely used for the surface treatment of tools, molds, automobile parts and the like, and is continuously promoted and improved. The arc ion plating technology is divided into forms of circular arc, rectangular arc, columnar arc and the like according to the difference of cathode arc shapes, wherein the most widely applied arc target technology is the arc target technology because the arc target technology has small volume, light weight and easy operation, and the quantity of the target materials can be selected according to the size of a vacuum equipment cavity, so that the operability of practical application of the arc target technology is greatly improved.
At present, the existing semiconductor tungsten-titanium alloy target materials are mainly divided into two main categories of smelting casting and powder metallurgy. The powder metallurgy target material is superior to a smelting casting target material in the aspects of component uniformity, density and the like. In order to reduce the cost of using powder metallurgy, the powder metallurgy target is often welded on a cooling back plate, the welding difficulty is high, the connection strength and the process are greatly related, and the quality is difficult to control. Meanwhile, the cooling water channel in the used cooling back plate often has cooling capacity which does not meet the use requirement in the existing tungsten-titanium alloy target. Therefore, a new tungsten-titanium alloy target for semiconductor chips is needed to overcome the above technical drawbacks.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a tungsten titanium alloy target for semiconductor chip to solve the problem that proposes among the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme:
the utility model provides a tungsten titanium alloy target for semiconductor chip, includes target and backplate, be provided with the wedge arch on the lower terminal surface of target, be provided with the wedge recess on the mountain terminal surface of backplate, the protruding joint of wedge is in the wedge recess, and the left and right sides of backplate is provided with the curb plate that upwards stretches out, the curb plate passes through connecting pin fixed connection with the lateral wall of target, still be provided with the cooling water course in the backplate, the cooling water course includes upward water course, condensation chamber and water course down, upward water course, condensation chamber and water course down constitute end to end's intercommunication water course.
Preferably, a through hole is formed in the side plate, blind holes are formed in the left end face and the right end face of the target, the connecting pin penetrates through the through hole, and one end of the connecting pin abuts against the blind holes.
Preferably, semi-cylindrical clamping grooves are formed in the surfaces of the wedge-shaped protrusion and the wedge-shaped groove, and clamping columns are clamped between the clamping grooves in the wedge-shaped protrusion and the clamping grooves in the wedge-shaped groove.
Preferably, the clamping column is made of pure copper material.
Preferably, the upper water channel is arranged in parallel with the surface of the wedge-shaped groove.
Preferably, the condensation chamber is arranged in a side plate, and radiating fins are inlaid on the left end face and the right end face of the side plate and are made of pure copper materials.
Compared with the prior art, the beneficial effects of the utility model are that: the utility model discloses in, the tungsten titanium alloy that the target was made for powder metallurgy has guaranteed the high performance of target, and the protruding joint of wedge is in the wedge recess, rethread connecting pin curb plate and target fixed connection, has guaranteed joint strength promptly, has reduced the assembly degree of difficulty again, and the rapid heat dissipation that the target can be satisfied in the intercommunication water course that condensation chamber and down water course constitute end to end. The clamping column is clamped and installed between the clamping grooves, and the connection strength between the target and the back plate is further improved. The clamping column is made of pure copper materials, and the pure copper has moderate hardness and good heat conductivity, so that the heat dissipation of the target material is accelerated while the adaptation is guaranteed. The upper water channel is arranged in parallel with the surface of the wedge-shaped groove, so that the heat dissipation of the target material is more uniform. The cooling fins are made of pure copper materials, so that cooling of the cooling medium in the condensation cavity can be accelerated. The utility model relates to a rational in infrastructure, the processing degree of difficulty is low, the tungsten titanium alloy target of semiconductor chip that the radiating effect is good.
Drawings
FIG. 1 is a schematic structural diagram of a tungsten-titanium alloy target for a semiconductor chip;
fig. 2 is a partially enlarged view of fig. 1 at K.
In the figure: the method comprises the following steps of 1-target material, 2-back plate, 3-side plate, 4-wedge-shaped protrusion, 5-wedge-shaped groove, 6-cooling water channel, 7-lower water channel, 8-upper water channel, 9-condensation cavity, 10-cooling fin, 11-connecting pin, 12-through hole, 13-blind hole, 14-clamping groove and 15-clamping column.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-2, the present invention provides a technical solution:
the utility model provides a tungsten titanium alloy target for semiconductor chip, includes target 1 and backplate 2, be provided with wedge arch 4 on the lower terminal surface of target 1, be provided with wedge recess 5 on the mountain terminal surface of backplate 2, wedge arch 4 joint is in wedge recess 5, and the left and right sides of backplate 2 is provided with the curb plate 3 that upwards stretches out, curb plate 3 passes through connecting pin 11 fixed connection with the lateral wall of target 1, still be provided with cooling water course 6 in the backplate 2, cooling water course 6 is including going upward water course 8, condensation chamber 9 and water course 7 down, going upward water course 8, condensation chamber 9 and water course 7 down constitute end to end's intercommunication water course.
Preferably, a through hole 12 is formed in the side plate 3, blind holes 13 are formed in left and right end faces of the target 1, the connecting pin 11 is inserted into the through hole 12, and one end of the connecting pin 11 abuts against the blind holes 13.
The movement of the target 1 moving up and down is limited through the connecting pin 11, and the target is limited in all directions on the basis of the matching of the wedge-shaped protrusion 4 and the wedge-shaped groove 5.
Preferably, the surfaces of the wedge-shaped protrusion 4 and the wedge-shaped groove 5 are provided with semi-cylindrical clamping grooves 14, and a clamping column 15 is clamped between the clamping grooves 14 in the wedge-shaped protrusion 4 and the clamping grooves 14 in the wedge-shaped groove 5.
The clamping columns 15 are clamped and installed between the clamping grooves 14, and the connection strength between the target material 1 and the back plate 2 is further improved.
Preferably, the snap-in posts 15 are made of pure copper material.
The clamping column 15 is made of pure copper material, and the pure copper has moderate hardness and good heat conductivity, so that the heat dissipation of the target material 1 is accelerated while the adaptation is ensured.
Preferably, the upgoing channel 8 is arranged parallel to the surface of the wedge-shaped groove 5.
The upper water channel 8 is arranged in parallel with the surface of the wedge-shaped groove 5, so that the heat dissipation of the target material 1 is more uniform.
Preferably, the condensation chamber 9 is arranged in the side plate 3, and the left and right end surfaces of the side plate 3 are inlaid with cooling fins 10, wherein the cooling fins 10 are made of pure copper material.
The fins 10 are made of pure copper material to accelerate the cooling of the cooling medium in the condensation chamber 9.
The utility model discloses a theory of operation is: target 1 is the tungsten titanium alloy that powder metallurgy made, has guaranteed target 1's high performance, and wedge arch 4 joint has guaranteed joint strength promptly in wedge recess 5, rethread connecting pin 11 curb plate 3 and target 1 fixed connection, has reduced the assembly degree of difficulty again, and condensation chamber 9 and down water course 7 constitute end to end's intercommunication water course and can satisfy the rapid heat dissipation of target 1. The movement of the target 1 moving up and down is limited through the connecting pin 11, and the target is limited in all directions on the basis of the matching of the wedge-shaped protrusion 4 and the wedge-shaped groove 5. The clamping columns 15 are clamped and installed between the clamping grooves 14, and the connection strength between the target material 1 and the back plate 2 is further improved. The clamping column 15 is made of pure copper material, and the pure copper has moderate hardness and good heat conductivity, so that the heat dissipation of the target material 1 is accelerated while the adaptation is ensured. The upper water channel 8 is arranged in parallel with the surface of the wedge-shaped groove 5, so that the heat dissipation of the target material 1 is more uniform. The fins 10 are made of pure copper material to accelerate the cooling of the cooling medium in the condensation chamber 9.
It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (6)
1. A tungsten titanium alloy target material for a semiconductor chip comprises a target material (1) and a back plate (2), and is characterized in that: be provided with protruding (4) of wedge on the lower terminal surface of target (1), be provided with wedge recess (5) on the mountain terminal surface of backplate (2), protruding (4) joint of wedge is in wedge recess (5), and the left and right sides of backplate (2) is provided with curb plate (3) that upwards stretches out, curb plate (3) pass through connecting pin (11) fixed connection with the lateral wall of target (1), still be provided with cooling water course (6) in backplate (2), cooling water course (6) are including going upward water course (8), condensation chamber (9) and water course (7) down, going upward water course (8), condensation chamber (9) and water course (7) constitute the intercommunication water course that end to end links to each other.
2. The tungsten-titanium alloy target for semiconductor chips according to claim 1, wherein: the side plate (3) is provided with a through hole (12), blind holes (13) are formed in the left end face and the right end face of the target (1), the connecting pin (11) penetrates through the through hole (12), and one end of the connecting pin (11) abuts against the blind holes (13).
3. The tungsten-titanium alloy target for semiconductor chips according to claim 1, wherein: the surface of wedge arch (4) and wedge recess (5) is provided with semi-cylindrical joint groove (14), and joint post (15) are installed to the joint between joint groove (14) in wedge arch (4) and joint groove (14) in wedge recess (5) joint.
4. The tungsten-titanium alloy target for semiconductor chips according to claim 3, wherein: the clamping column (15) is made of pure copper materials.
5. The tungsten-titanium alloy target for semiconductor chips according to claim 1, wherein: the upper water channel (8) is arranged in parallel with the surface of the wedge-shaped groove (5).
6. The tungsten-titanium alloy target for semiconductor chips according to claim 1, wherein: the condensation cavity (9) is arranged in the side plate (3), radiating fins (10) are embedded on the left end face and the right end face of the side plate (3), and the radiating fins (10) are made of pure copper materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921806050.3U CN210916234U (en) | 2019-10-25 | 2019-10-25 | Tungsten-titanium alloy target material for semiconductor chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921806050.3U CN210916234U (en) | 2019-10-25 | 2019-10-25 | Tungsten-titanium alloy target material for semiconductor chip |
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| CN210916234U true CN210916234U (en) | 2020-07-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113927176A (en) * | 2021-11-26 | 2022-01-14 | 深圳市宏钢机械设备有限公司 | Dissimilar material brazing local plating water-cooling base |
-
2019
- 2019-10-25 CN CN201921806050.3U patent/CN210916234U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113927176A (en) * | 2021-11-26 | 2022-01-14 | 深圳市宏钢机械设备有限公司 | Dissimilar material brazing local plating water-cooling base |
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