CN210867636U - Integrated proximity switch and system - Google Patents
Integrated proximity switch and system Download PDFInfo
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- CN210867636U CN210867636U CN201921878365.9U CN201921878365U CN210867636U CN 210867636 U CN210867636 U CN 210867636U CN 201921878365 U CN201921878365 U CN 201921878365U CN 210867636 U CN210867636 U CN 210867636U
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Abstract
The utility model belongs to integrated form proximity switch, concretely relates to integrated form proximity switch and system has solved among the prior art unable technical problem who realizes full automatization standard production and bulky of hall proximity switch. The integrated proximity switch comprises a Hall integrated circuit and a magnetic thin film layer arranged on the back of the Hall integrated circuit, an insulating layer is arranged between the Hall integrated circuit and the magnetic thin film layer, and the N pole of the magnetic thin film layer is arranged below the upper S pole or the S pole is arranged below the upper N pole; the Hall integrated circuit, the insulating layer and the magnetic film layer are packaged into a whole; or the magnetic thin film layer is replaced with a magnet. The integrated proximity switch may also be used in an integrated proximity switch system, with a magnetic object disposed opposite the integrated proximity switch.
Description
Technical Field
The utility model belongs to integrated form proximity switch and processing method thereof, concretely relates to integrated form proximity switch and system.
Background
The proximity switch made of the Hall element has the characteristics of no contact, low power consumption, long service life and high response frequency, and has a wide application range.
The current traditional hall proximity switch 01 has the working principle that when a magnetic target 02 approaches the hall switch 01, a hall element on a detection surface of the hall switch 01 generates a hall effect to change the state of an internal circuit of the hall switch 01, so that whether the magnetic target 02 exists nearby is judged, and the on-off of the hall proximity switch 01 is controlled. This kind of hall proximity switch 01 simple structure, convenient to use nevertheless has following problem: (1) and the full-automatic standard production cannot be realized. The existing Hall proximity switch technology is manufactured by a method of glue pouring by utilizing a Hall element and a magnet as well as a shell, and is difficult to achieve full-automatic standardized production; (2) the volume is large. The hall proximity switch 01 produced using the foregoing method is large in size. Because the detection object of the hall proximity switch 01 must be a magnetic object, in actual use, a piece of magnetic iron 03 is installed on the hall proximity switch 01 as shown in fig. 1, or a piece of magnetic iron 03 is installed on a general object 04 to be detected as shown in fig. 2 to meet the working requirement of the hall proximity switch 01, but the structural volume is large, and the external magnetic iron is fragile. The hall proximity switch 01 is also used in other fields, such as a rotation speed sensor, and has the problems.
SUMMERY OF THE UTILITY MODEL
The utility model mainly aims at solving the technical problem that the hall proximity switch can not realize full automatization standard production and bulky among the prior art, providing an integrated form proximity switch and system.
In order to achieve the above object, the utility model provides a following technical scheme:
an integrated proximity switch is characterized by comprising a Hall integrated circuit and a magnetic thin film layer arranged on the back of the Hall integrated circuit, wherein an insulating layer is arranged between the Hall integrated circuit and the magnetic thin film layer, and the N pole of the magnetic thin film layer is arranged below the upper S pole or the S pole is arranged below the upper N pole; the Hall integrated circuit, the insulating layer and the magnetic film layer are packaged into a whole.
In order to keep apart between hall integrated circuit and the magnetic film layer, the magnetic film layer of being convenient for sputters on hall integrated circuit, carries out the preliminary treatment earlier to hall integrated circuit's the back, sets up the insulating layer:
further, the insulating layer is a silicon nitride insulating layer, or the insulating layer is a silicon dioxide insulating layer. In order to simultaneously take the integration level and the switch performance into consideration, the thickness of the magnetic thin film layer is controlled to be 100-400 μm, and the thickness of the insulating layer is controlled to be 100-2000 nm.
An integrated proximity switch system, characterized in that it comprises a magnetic body and an integrated proximity switch as described above; the magnetic object and the integrated switch are arranged oppositely, and a gap is reserved between the magnetic object and the integrated switch.
The integrated proximity switch system has a wide application range, can be used for detecting the proximity or the distance degree and other proximity occasions, and only needs to arrange the magnetic object and the integrated proximity switch oppositely.
An integrated proximity switch is characterized by comprising a Hall integrated circuit and a magnet arranged on the back of the Hall integrated circuit; an insulating layer is arranged between the Hall integrated circuit and the magnet; the connecting line of the N pole and the S pole of the magnet is vertical to the Hall integrated circuit; the Hall integrated circuit, the insulating layer and the magnet are packaged into a whole. The magnet replaces the magnetic film layer to achieve the purpose of the magnetic film layer, the specific thickness of the magnet can be adjusted according to needs, and the magnet with the thickness of 0.1-0.5mm is generally adopted.
Further, the insulating layer is a silicon nitride insulating layer or a silicon dioxide insulating layer, and as mentioned above, the silicon dioxide insulating layer or the silicon nitride insulating layer facilitates the combination of the magnet and the hall ic.
An integrated proximity switch system, characterized in that it comprises a magnetic body and an integrated proximity switch as described above; the magnetic object and the integrated proximity switch are arranged oppositely, and a gap is reserved between the magnetic object and the integrated proximity switch.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the utility model discloses an integrated form proximity switch, with magnetic film layer or magnet integration on hall integrated circuit, encapsulate again, magnetic field density reinforcing produces hall effect more easily, control switch's break-make, the volume of switch greatly reduces in addition, realizes full-automatic standardized production more easily simultaneously. The utility model discloses a switch when the volume reduces, has guaranteed hall proximity switch's precision, and the integrated level is high, need not to increase little magnet again on hall proximity switch or the target that awaits measuring during the use, the threshold value of the adjustment switch break-make that integrated form proximity switch also can be convenient. In addition, the insulating layer is convenient for isolating the Hall integrated circuit from the magnetic film layer or isolating the Hall integrated circuit from the magnet.
2. The utility model discloses an insulating layer adopts silica insulating layer or silicon nitride insulating layer, especially silica insulating layer, and it is better to keep apart the effect, and the magnetic film layer of being more convenient for sputters man-hour adding.
3. The utility model discloses an integrated form proximity switch system, magnetic object and the utility model discloses an integrated form proximity switch mutual disposition utilizes integrated form proximity switch's high accuracy and high integration characteristic, and the system precision also obtains guaranteeing, and small in size when using can be applicable to more extensive application environment.
Drawings
Fig. 1 is a schematic view of a magnetic iron installed on a hall proximity switch in the background art of the present invention;
fig. 2 is a schematic view of the magnetic iron installed on the target to be measured in the background art of the present invention;
fig. 3 is a schematic structural diagram of an integrated proximity switch according to the first and second embodiments of the present invention;
fig. 4 is a schematic structural diagram of an integrated proximity switch system according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of an integrated proximity switch system according to a second embodiment of the present invention;
FIG. 6 is a schematic diagram of the rotation speed and direction detection of the integrated proximity switch system according to the second embodiment of the present invention (the gear rotates in the direction A);
FIG. 7 is a schematic diagram of the rotation speed and direction detection of the integrated proximity switch system according to the second embodiment of the present invention (the gear rotates in the direction B);
fig. 8 is a schematic structural diagram of an integrated proximity switch according to a third embodiment and a fourth embodiment of the present invention;
fig. 9 is a schematic view of the working principle of the normally open type N-pole trigger proximity switch in the integrated proximity switch of the present invention;
fig. 10 is a schematic view of the working principle of the normally open S-pole trigger proximity switch in the integrated proximity switch of the present invention;
fig. 11 is a schematic structural diagram of a hall wafer in the manufacturing method of the integrated proximity switch of the present invention.
The following are the reference numbers for fig. 1 and 2:
the device comprises a Hall proximity switch 01, a magnetic target 02, a magnetic iron 03 and a target to be detected 04.
The following are the reference numbers for fig. 3-11:
the device comprises a 1-Hall integrated circuit, a 2-insulating layer, a 3-magnetic thin film layer, a 301-N pole magnetic thin film layer, a 302-S pole magnetic thin film layer, a 4-magnet, a 5-integrated proximity switch, a 6-magnetic object, a 7-Hall wafer and an 8-gear.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the embodiments of the present invention and the accompanying drawings, and obviously, the described embodiments are not intended to limit the present invention.
Example one
As shown in fig. 4, an integrated proximity switch system includes a magnetic body 6 and an integrated proximity switch 5; the magnetic body 6 is arranged opposite to the integrated proximity switch 5, and a gap is left between the magnetic body 6 and the integrated proximity switch 5. As shown in fig. 3, the integrated proximity switch 5 includes a hall ic 1, and a magnetic thin film layer 3 disposed on the back of the hall ic 1, an insulating layer 2 is disposed between the hall ic 1 and the magnetic thin film layer 3, the N pole of the magnetic thin film layer 3 is below the upper S pole or the S pole is below the upper N pole, and the upper and lower positions of the N pole magnetic thin film layer 301 and the S pole magnetic thin film layer 302 of the magnetic thin film layer 3 are not limited; the Hall integrated circuit 1, the insulating layer 2 and the magnetic thin film layer 3 are packaged into a whole, the insulating layer 2 is a silica insulating layer with the thickness of 500nm, the thickness of the magnetic thin film layer 3 is 100 micrometers, and the N-pole magnetic thin film layer 301 and the S-pole magnetic thin film layer 302 are the same in thickness.
The integrated proximity switch system can be widely applied to various occasions as required, such as a refrigerator, a washing machine and the like, the magnetic object 6 is installed on one side of a door body of the refrigerator or the washing machine, the integrated proximity switch 5 is installed on the other side, and the integrated proximity switch can effectively sense when the door body is closed or opened to a preset distance. The integrated proximity switch system may also be used in other applications for detecting proximity or whether closed.
Example two
As shown in fig. 5, an integrated proximity switch system includes a magnetic body 6 and an integrated proximity switch 5; the magnetic body 6 is arranged opposite to the integrated proximity switch 5, and a gap is left between the magnetic body 6 and the integrated proximity switch 5. The integrated proximity switch 5 comprises a Hall integrated circuit 1 and a magnetic thin film layer 3 arranged on the back of the Hall integrated circuit 1, an insulating layer 2 is arranged between the Hall integrated circuit 1 and the magnetic thin film layer 3, the N pole of the magnetic thin film layer 3 is under the upper S pole or the S pole is under the upper N pole, and the upper and lower positions of the N pole magnetic thin film layer 301 and the S pole magnetic thin film layer 302 of the magnetic thin film layer 3 are not limited; the Hall integrated circuit 1, the insulating layer 2 and the magnetic thin film layer 3 are packaged into a whole, the insulating layer 2 is a silicon nitride insulating layer with the thickness of 500nm, the thickness of the magnetic thin film layer 3 is 100 micrometers, and the N-pole magnetic thin film layer 301 and the S-pole magnetic thin film layer 302 are the same in thickness.
The integrated proximity switch system is used for detecting the rotating speed and the direction, and the magnetic object 6 is a gear 8. As shown in fig. 6, when the gear 8 rotates in the direction a, the Vout1 outputs a square wave when the tooth portion is close to the integrated proximity switch 5, the number of square waves per unit time can be used to determine the rotation speed of the gear 8, and the more square waves are output per unit time, which indicates that the higher the rotation speed of the gear 8 is, the lower the Vout2 outputs a level; as shown in fig. 7, when the gear 8 rotates in the direction B when the direction of the gear 8 is switched, the Vout1 outputs a square wave when the tooth portion approaches the integrated proximity switch 5, the number of square waves per unit time can be used to determine the rotation speed of the gear 8, and the faster the square wave is output per unit time, which indicates that the gear 8 rotates faster, the Vout2 outputs a high level.
EXAMPLE III
An integrated proximity switch system comprising a magnetic body 6 and an integrated proximity switch 5; the magnetic body 6 is arranged opposite to the integrated proximity switch 5, and a gap is left between the magnetic body 6 and the integrated proximity switch 5. As shown in fig. 8, the integrated proximity switch 5 includes a hall ic 1 and a magnet 4 disposed on the back of the hall ic 1; an insulating layer 2 is arranged between the Hall integrated circuit 1 and the magnet 4; the connecting line of the N pole and the S pole of the magnet 4 is vertical to the Hall integrated circuit 1; the Hall integrated circuit 1, the insulating layer 2 and the magnet 4 are packaged into a whole. The thickness of the magnet 4 is 0.1mm, and the insulating layer 2 is a silicon dioxide insulating layer with a thickness of 1000 nm.
The integrated proximity switch system can also be widely applied to various occasions such as a refrigerator and a washing machine according to requirements similar to the embodiment, wherein the magnetic object 6 is arranged on one side of a door body of the refrigerator or the washing machine, and the integrated proximity switch 5 is arranged on the other side. The integrated proximity switch system may also be used in other applications for detecting proximity or whether closed.
Example four
An integrated proximity switch system comprising a magnetic body 6 and an integrated proximity switch 5; the magnetic body 6 is arranged opposite to the integrated proximity switch 5, and a gap is left between the magnetic body 6 and the integrated proximity switch 5. As shown in fig. 8, the integrated proximity switch 5 includes a hall ic 1 and a magnet 4 disposed on the back of the hall ic 1; an insulating layer 2 is arranged between the Hall integrated circuit 1 and the magnet 4; the connecting line of the N pole and the S pole of the magnet 4 is vertical to the Hall integrated circuit 1; the Hall integrated circuit 1, the insulating layer 2 and the magnet 4 are packaged into a whole. The thickness of the magnet 4 is 0.1mm, and the insulating layer 2 is a silicon nitride insulating layer with a thickness of 1000 nm.
The integrated proximity switch system can be used to detect speed and direction similar to the second embodiment.
In addition, the silicon nitride insulating layer and the silicon dioxide insulating layer are both beneficial to sputtering the magnetic film layer 3 or sticking the magnet 4 on the Hall integrated circuit 1, particularly the silicon dioxide insulating layer has good metal adhesion, and the metal cannot be peeled off together when the metal is peeled off.
The hall ic 1 contains a basic logic circuit.
The working principle of the integrated proximity switch system is as follows: referring to fig. 9, in order to work with one of the normally open N-pole triggered integrated proximity switches, when the integrated proximity switch 5 approaches the magnetic object 6, the magnetic induction line is increased, the magnetic density is increased, and the magnetic field reaches the magnetic field starting point BopThe integrated proximity switch 5 starts to work, when the integrated proximity switch 5 is far away from the magnetic object 6, the magnetic field intensity is gradually reduced, and when a certain distance is reached, the magnetic field closing point B is reachedRPThe integrated proximity switch 5 is off; referring to fig. 10, in order to work with one of the normally open S-pole triggered integrated proximity switches, when the integrated proximity switch 5 approaches the magnetic object 6, the magnetic induction line is increased, the magnetic density is increased, and the magnetic field reaches the magnetic field starting point BopThe integrated proximity switch 5 starts to work, when the integrated proximity switch 5 is far away from the magnetic object 6, the magnetic field intensity is gradually reduced, and when a certain distance is reached, the magnetic field closing point B is reachedRPThe integrated proximity switch 5 is off. Wherein, VOUTTo output a voltage, VOHAt a high level, VOLIs at a low level, BOPAs the magnetic field opening point, BRPAs a point of release of the magnetic field, BHIs hysteresis.
In addition, the utility model also discloses a manufacturing approach of above-mentioned integrated form proximity switch:
(1) if the magnetic layer 3 is a magnetic thin film:
cutting the Hall wafer 7 into a plurality of Hall integrated circuits 1, and correspondingly forming a plurality of chip-level integrated proximity switches;
and 4, packaging each chip-level integrated proximity switch to finish the processing of the integrated proximity switch 5.
(2) If the magnet 4 is used, then:
cutting the Hall wafer 7 into a plurality of Hall integrated circuits 1, and correspondingly forming a plurality of chip-level integrated proximity switches;
and 4, packaging each chip-level integrated proximity switch to finish the processing of the integrated proximity switch 5.
As shown in fig. 11, the integrated proximity switch can be manufactured by processing the hall wafer 7 as above, processing a plurality of integrated proximity switches 5 at a time, and then dividing the hall wafer 7 with the insulating layer 2, the magnetic thin film layer 3 or the magnet 4 into a plurality of integrated proximity switches 5 based on the hall integrated circuit 1 by cutting, which is convenient for industrial production. The integrated proximity switches 5 can also be manufactured on the basis of the hall ics 1, respectively. Can be selected according to actual needs.
The magnetic film is sputtered by adopting a magnetron sputtering method, or a magnet is arranged on a silicon dioxide insulating layer or a silicon nitride insulating layer by adopting a sticking method, and the whole packaging is carried out after cutting, so that the processing method is convenient and fast to operate, and a plurality of integrated proximity switches can be processed at one time; the manufacturing method is convenient for realizing full-automatic standardized machining, the full-automatic standardized machining method not only can realize miniaturization more easily, but also can greatly improve product precision, and compared with the method that a small magnet is added on a Hall switch or a target to be measured during use, the product system can be greatly reduced, and the product precision is improved. By utilizing the characteristics of high precision and high integration degree of the integrated proximity switch, the system precision is also ensured, and the integrated proximity switch is small in size during application and can be suitable for wider application environments.
The integrated proximity switch 5 ensures the precision of the Hall switch while reducing the volume, has high integration level, is easy for full-automatic standardized production, does not need to add a small magnet on the Hall switch or a target to be detected during use, and can conveniently adjust the on-off threshold of the Hall integrated circuit 1.
The above is only the embodiment of the present invention, and is not the limitation of the protection scope of the present invention, all the equivalent structure changes made in the contents of the specification and the drawings, or the direct or indirect application in other related technical fields are included in the patent protection scope of the present invention.
Claims (8)
1. An integrated proximity switch, comprising: the Hall integrated circuit comprises a Hall integrated circuit (1) and a magnetic thin film layer (3) arranged on the back of the Hall integrated circuit (1), wherein an insulating layer (2) is arranged between the Hall integrated circuit (1) and the magnetic thin film layer (3), and the N pole of the magnetic thin film layer (3) is arranged below the upper S pole or below the upper N pole; the Hall integrated circuit (1), the insulating layer (2) and the magnetic film layer (3) are packaged into a whole.
2. An integrated proximity switch as in claim 1, wherein: the insulating layer (2) is a silicon nitride insulating layer.
3. An integrated proximity switch as in claim 1, wherein: the insulating layer (2) is a silicon dioxide insulating layer.
4. An integrated proximity switch system, comprising: comprising a magnetic body (6) and an integrated proximity switch (5) according to any of claims 1-3; the magnetic object (6) and the integrated proximity switch (5) are arranged oppositely, and a gap is reserved between the magnetic object (6) and the integrated proximity switch (5).
5. An integrated proximity switch, comprising: the magnetic circuit comprises a Hall integrated circuit (1) and a magnet (4) arranged on the back of the Hall integrated circuit (1); an insulating layer (2) is arranged between the Hall integrated circuit (1) and the magnet (4); the connecting line of the N pole and the S pole of the magnet (4) is vertical to the Hall integrated circuit (1); the Hall integrated circuit (1), the insulating layer (2) and the magnet (4) are packaged into a whole.
6. An integrated proximity switch as in claim 5, wherein: the insulating layer (2) is a silicon nitride insulating layer.
7. An integrated proximity switch as in claim 5, wherein: the insulating layer (2) is a silicon dioxide insulating layer.
8. An integrated proximity switch system, comprising: comprising a magnetic body (6) and an integrated proximity switch (5) according to any of claims 5-7; the magnetic object (6) and the integrated proximity switch (5) are arranged oppositely, and a gap is reserved between the magnetic object (6) and the integrated proximity switch (5).
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| CN201921878365.9U CN210867636U (en) | 2019-11-04 | 2019-11-04 | Integrated proximity switch and system |
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| CN201921878365.9U CN210867636U (en) | 2019-11-04 | 2019-11-04 | Integrated proximity switch and system |
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| CN210867636U true CN210867636U (en) | 2020-06-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110880927A (en) * | 2019-11-04 | 2020-03-13 | 中国科学院西安光学精密机械研究所 | Integrated proximity switch, proximity switch system and proximity switch manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110880927A (en) * | 2019-11-04 | 2020-03-13 | 中国科学院西安光学精密机械研究所 | Integrated proximity switch, proximity switch system and proximity switch manufacturing method |
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