CN110880927A - Integrated proximity switch, proximity switch system and proximity switch manufacturing method - Google Patents
Integrated proximity switch, proximity switch system and proximity switch manufacturing method Download PDFInfo
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- CN110880927A CN110880927A CN201911064394.6A CN201911064394A CN110880927A CN 110880927 A CN110880927 A CN 110880927A CN 201911064394 A CN201911064394 A CN 201911064394A CN 110880927 A CN110880927 A CN 110880927A
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- proximity switch
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 36
- 239000010408 film Substances 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 238000005520 cutting process Methods 0.000 claims description 12
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000003672 processing method Methods 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 16
- 238000010586 diagram Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000001960 triggered effect Effects 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000005355 Hall effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/945—Proximity switches
- H03K17/95—Proximity switches using a magnetic detector
Abstract
The invention belongs to an integrated switch and a processing method thereof, and particularly relates to an integrated proximity switch, a proximity switch system and a proximity switch manufacturing method, which solve the technical problems that a Hall proximity switch in the prior art cannot realize full-automatic standard production and is large in size. The integrated proximity switch comprises a Hall integrated circuit and a magnetic thin film layer arranged on the back of the Hall integrated circuit, an insulating layer is arranged between the Hall integrated circuit and the magnetic thin film layer, and the N pole of the magnetic thin film layer is arranged below the upper S pole or the S pole is arranged below the upper N pole; the Hall integrated circuit, the insulating layer and the magnetic film layer are packaged into a whole; or the magnetic thin film layer is replaced with a magnet. The processing method of the integrated proximity switch integrates the magnetic film layer or the magnet on the Hall integrated circuit in a sputtering or sticking mode. The integrated proximity switch may also be used in an integrated proximity switch system, with a magnetic object disposed opposite the integrated proximity switch.
Description
Technical Field
The invention belongs to an integrated proximity switch and a processing method thereof, and particularly relates to an integrated proximity switch, a proximity switch system and a proximity switch manufacturing method.
Background
The proximity switch made of the Hall element has the characteristics of no contact, low power consumption, long service life and high response frequency, and has a wide application range.
The current traditional hall proximity switch 01 has the working principle that when a magnetic target 02 approaches the hall switch 01, a hall element on a detection surface of the hall switch 01 generates a hall effect to change the state of an internal circuit of the hall switch 01, so that whether the magnetic target 02 exists nearby is judged, and the on-off of the hall proximity switch 01 is controlled. This kind of hall proximity switch 01 simple structure, convenient to use nevertheless has following problem: (1) and the full-automatic standard production cannot be realized. The existing Hall proximity switch technology is manufactured by a method of glue pouring by utilizing a Hall element and a magnet as well as a shell, and is difficult to achieve full-automatic standardized production; (2) the volume is large. The hall proximity switch 01 produced using the foregoing method is large in size. Because the detection object of the hall proximity switch 01 must be a magnetic object, in actual use, a piece of magnetic iron 03 is mounted on the hall proximity switch 01 as shown in fig. 1 or on the target 04 to be detected as shown in fig. 2 to meet the working requirement of the hall proximity switch 01, but the structural size is large, and the external magnetic iron is fragile. The hall proximity switch 01 is also used in other fields, such as a rotation speed sensor, and has the problems.
Disclosure of Invention
The invention mainly aims to solve the technical problems that a Hall proximity switch in the prior art cannot realize full-automatic standard production and is large in size, and provides an integrated proximity switch, a proximity switch system and a proximity switch manufacturing method.
In order to achieve the purpose, the invention provides the following technical scheme:
an integrated proximity switch is characterized by comprising a Hall integrated circuit and a magnetic thin film layer arranged on the back of the Hall integrated circuit, wherein an insulating layer is arranged between the Hall integrated circuit and the magnetic thin film layer, and the N pole of the magnetic thin film layer is arranged below the upper S pole or the S pole is arranged below the upper N pole; the Hall integrated circuit, the insulating layer and the magnetic film layer are packaged into a whole.
In order to keep apart between hall integrated circuit and the magnetic film layer, the magnetic film layer of being convenient for sputters on hall integrated circuit, carries out the preliminary treatment earlier to hall integrated circuit's the back, sets up the insulating layer:
further, the insulating layer is a silicon nitride insulating layer, or the insulating layer is a silicon dioxide insulating layer. In order to simultaneously take the integration level and the switch performance into consideration, the thickness of the magnetic thin film layer is controlled to be 100-400 μm, and the thickness of the insulating layer is controlled to be 100-2000 nm.
An integrated proximity switch system, characterized in that it comprises a magnetic body and an integrated proximity switch as described above; the magnetic object and the integrated switch are arranged oppositely, and a gap is reserved between the magnetic object and the integrated switch.
The integrated proximity switch system has a wide application range, can be used for detecting the proximity or the distance degree and other proximity occasions, and only needs to arrange the magnetic object and the integrated proximity switch oppositely.
An integrated proximity switch is characterized by comprising a Hall integrated circuit and a magnet arranged on the back of the Hall integrated circuit; an insulating layer is arranged between the Hall integrated circuit and the magnet; the connecting line of the N pole and the S pole of the magnet is vertical to the Hall integrated circuit; the Hall integrated circuit, the insulating layer and the magnet are packaged into a whole. The magnet replaces the magnetic film layer to achieve the purpose of the magnetic film layer, the specific thickness of the magnet can be adjusted according to needs, and the magnet with the thickness of 0.1-0.5mm is generally adopted.
Further, the insulating layer is a silicon nitride insulating layer or a silicon dioxide insulating layer, and as mentioned above, the silicon dioxide insulating layer or the silicon nitride insulating layer facilitates the combination of the magnet and the hall ic.
An integrated proximity switch system, characterized in that it comprises a magnetic body and an integrated proximity switch as described above; the magnetic object and the integrated proximity switch are arranged oppositely, and a gap is reserved between the magnetic object and the integrated proximity switch.
The manufacturing method of the integrated proximity switch is characterized by comprising the following steps:
or, pasting a magnet on the insulating layer, wherein the connecting line of the N pole and the S pole of the magnet is vertical to the Hall integrated circuit;
or cutting the Hall wafer attached with the insulating layer and the magnet;
cutting the Hall wafer into a plurality of Hall integrated circuits, and correspondingly forming a plurality of chip-level integrated proximity switches;
and 4, packaging each chip-level integrated proximity switch to finish the processing of the integrated proximity switch (5).
Compared with the prior art, the invention has the beneficial effects that:
1. according to the integrated proximity switch, the magnetic film layer or the magnet is integrated on the Hall integrated circuit and then packaged, the magnetic field density is enhanced, the Hall effect is more easily generated, the on-off of the switch is controlled, in addition, the size of the switch is greatly reduced, and meanwhile, the full-automatic standardized production is more easily realized. The size of the switch is reduced, the precision of the Hall proximity switch is guaranteed, the integration level is high, a small magnet does not need to be added on the Hall proximity switch or a target to be detected during use, and the integrated proximity switch can conveniently adjust the on-off threshold value of the switch. In addition, the insulating layer is convenient for isolating the Hall integrated circuit from the magnetic film layer or isolating the Hall integrated circuit from the magnet.
2. The insulating layer of the invention adopts a silicon dioxide insulating layer or a silicon nitride insulating layer, particularly the silicon dioxide insulating layer, has better isolation effect and is more convenient for sputtering the magnetic film layer during processing.
3. According to the integrated proximity switch system, the magnetic object and the integrated proximity switch are arranged oppositely, the system precision is guaranteed by utilizing the characteristics of high precision and high integration of the integrated proximity switch, and the integrated proximity switch system is small in size during application and can be applied to wider application environments.
4. The manufacturing method of the integrated proximity switch adopts a magnetron sputtering method to sputter a magnetic film, or a pasting method to arrange a magnet on a silicon dioxide insulating layer or a silicon nitride insulating layer, and then the whole packaging is carried out after cutting, the processing method has convenient operation, and can process a plurality of integrated proximity switches at one time; the manufacturing method is convenient for realizing full-automatic standardized machining, the full-automatic standardized machining method not only can realize miniaturization more easily, but also can greatly improve product precision, and compared with the method that a small magnet is added on a Hall switch or a target to be measured during use, the product system can be greatly reduced, and the product precision is improved. By utilizing the characteristics of high precision and high integration degree of the integrated proximity switch, the system precision is also ensured, and the integrated proximity switch is small in size during application and can be suitable for wider application environments.
Drawings
FIG. 1 is a schematic diagram of a Hall proximity switch with a magnet mounted thereon according to the background art of the present invention;
FIG. 2 is a schematic diagram illustrating the use of a magnet mounted on a target according to the background art of the present invention;
fig. 3 is a schematic structural diagram of an integrated proximity switch according to a first embodiment and a second embodiment of the present invention;
FIG. 4 is a schematic diagram of an integrated proximity switch system according to one embodiment of the present invention;
FIG. 5 is a schematic diagram of an integrated proximity switch system according to a second embodiment of the present invention;
FIG. 6 is a schematic diagram of the rotation speed and direction detection of the integrated proximity switch system according to the second embodiment of the present invention (the gear rotates in the direction A);
FIG. 7 is a schematic diagram of the rotation speed and direction detection of the integrated proximity switch system according to the second embodiment of the present invention (the gear rotates in the direction B);
fig. 8 is a schematic structural diagram of an integrated proximity switch according to a third embodiment and a fourth embodiment of the present invention;
FIG. 9 is a schematic diagram of the working principle of the normally open type N-pole triggered proximity switch in the integrated proximity switch of the present invention;
FIG. 10 is a schematic diagram of the operating principle of the normally open S-pole triggered proximity switch of the integrated proximity switch of the present invention;
fig. 11 is a schematic structural diagram of a hall wafer in the method for manufacturing an integrated proximity switch according to the present invention.
The following are the reference numbers for fig. 1 and 2:
wherein, 01-Hall proximity switch, 02-magnetic target, 03-magnetic iron, 04-target to be measured.
The following are the reference numbers for fig. 3-11:
the device comprises a 1-Hall integrated circuit, a 2-insulating layer, a 3-magnetic thin film layer, a 301-N pole magnetic thin film layer, a 302-S pole magnetic thin film layer, a 4-magnet, a 5-integrated proximity switch, a 6-magnetic object, a 7-Hall wafer and an 8-gear.
Detailed Description
The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention and the accompanying drawings, and it is obvious that the described embodiments do not limit the present invention.
Example one
As shown in fig. 4, an integrated proximity switch system includes a magnetic body 6 and an integrated proximity switch 5; the magnetic body 6 is arranged opposite to the integrated proximity switch 5, and a gap is left between the magnetic body 6 and the integrated proximity switch 5. As shown in fig. 3, the integrated proximity switch 5 includes a hall ic 1, and a magnetic thin film layer 3 disposed on the back of the hall ic 1, an insulating layer 2 is disposed between the hall ic 1 and the magnetic thin film layer 3, the N pole of the magnetic thin film layer 3 is below the upper S pole or the S pole is below the upper N pole, and the upper and lower positions of the N pole magnetic thin film layer 301 and the S pole magnetic thin film layer 302 of the magnetic thin film layer 3 are not limited; the Hall integrated circuit 1, the insulating layer 2 and the magnetic thin film layer 3 are packaged into a whole, the insulating layer 2 is a silica insulating layer with the thickness of 500nm, the thickness of the magnetic thin film layer 3 is 100 micrometers, and the N-pole magnetic thin film layer 301 and the S-pole magnetic thin film layer 302 are the same in thickness.
The integrated proximity switch system can be widely applied to various occasions as required, such as a refrigerator, a washing machine and the like, the magnetic object 6 is installed on one side of a door body of the refrigerator or the washing machine, the integrated proximity switch 5 is installed on the other side, and the integrated proximity switch can effectively sense when the door body is closed or opened to a preset distance. The integrated proximity switch system may also be used in other applications for detecting proximity or whether closed.
Example two
As shown in fig. 5, an integrated proximity switch system includes a magnetic body 6 and an integrated proximity switch 5; the magnetic body 6 is arranged opposite to the integrated proximity switch 5, and a gap is left between the magnetic body 6 and the integrated proximity switch 5. The integrated proximity switch 5 comprises a Hall integrated circuit 1 and a magnetic thin film layer 3 arranged on the back of the Hall integrated circuit 1, an insulating layer 2 is arranged between the Hall integrated circuit 1 and the magnetic thin film layer 3, the N pole of the magnetic thin film layer 3 is under the upper S pole or the S pole is under the upper N pole, and the upper and lower positions of the N pole magnetic thin film layer 301 and the S pole magnetic thin film layer 302 of the magnetic thin film layer 3 are not limited; the Hall integrated circuit 1, the insulating layer 2 and the magnetic thin film layer 3 are packaged into a whole, the insulating layer 2 is a silicon nitride insulating layer with the thickness of 500nm, the thickness of the magnetic thin film layer 3 is 100 micrometers, and the N-pole magnetic thin film layer 301 and the S-pole magnetic thin film layer 302 are the same in thickness.
The integrated proximity switch system is used for detecting the rotating speed and the direction, and the magnetic object 6 is a gear 8. As shown in fig. 6, when the gear 8 rotates in the direction a, the Vout1 outputs a square wave when the tooth portion is close to the integrated proximity switch 5, the number of square waves per unit time can be used to determine the rotation speed of the gear 8, and the more square waves are output per unit time, which indicates that the higher the rotation speed of the gear 8 is, the lower the Vout2 outputs a level; as shown in fig. 7, when the gear 8 rotates in the direction B when the direction of the gear 8 is switched, the Vout1 outputs a square wave when the tooth portion approaches the integrated proximity switch 5, the number of square waves per unit time can be used to determine the rotation speed of the gear 8, and the faster the square wave is output per unit time, which indicates that the gear 8 rotates faster, the Vout2 outputs a high level.
EXAMPLE III
An integrated proximity switch system comprising a magnetic body 6 and an integrated proximity switch 5; the magnetic body 6 is arranged opposite to the integrated proximity switch 5, and a gap is left between the magnetic body 6 and the integrated proximity switch 5. As shown in fig. 8, the integrated proximity switch 5 includes a hall ic 1 and a magnet 4 disposed on the back of the hall ic 1; an insulating layer 2 is arranged between the Hall integrated circuit 1 and the magnet 4; the connecting line of the N pole and the S pole of the magnet 4 is vertical to the Hall integrated circuit 1; the Hall integrated circuit 1, the insulating layer 2 and the magnet 4 are packaged into a whole. The thickness of the magnet 4 is 0.1mm, and the insulating layer 2 is a silicon dioxide insulating layer with a thickness of 1000 nm.
The integrated proximity switch system can also be widely applied to various occasions such as a refrigerator and a washing machine according to requirements similar to the embodiment, wherein the magnetic object 6 is arranged on one side of a door body of the refrigerator or the washing machine, and the integrated proximity switch 5 is arranged on the other side. The integrated proximity switch system may also be used in other applications for detecting proximity or whether closed.
Example four
An integrated proximity switch system comprising a magnetic body 6 and an integrated proximity switch 5; the magnetic body 6 is arranged opposite to the integrated proximity switch 5, and a gap is left between the magnetic body 6 and the integrated proximity switch 5. As shown in fig. 8, the integrated proximity switch 5 includes a hall ic 1 and a magnet 4 disposed on the back of the hall ic 1; an insulating layer 2 is arranged between the Hall integrated circuit 1 and the magnet 4; the connecting line of the N pole and the S pole of the magnet 4 is vertical to the Hall integrated circuit 1; the Hall integrated circuit 1, the insulating layer 2 and the magnet 4 are packaged into a whole. The thickness of the magnet 4 is 0.1mm, and the insulating layer 2 is a silicon nitride insulating layer with a thickness of 1000 nm.
The integrated proximity switch system can be used to detect speed and direction similar to the second embodiment.
In addition, the silicon nitride insulating layer and the silicon dioxide insulating layer are both beneficial to sputtering the magnetic film layer 3 or sticking the magnet 4 on the Hall integrated circuit 1, particularly the silicon dioxide insulating layer has good metal adhesion, and the metal cannot be peeled off together when the metal is peeled off.
The hall ic 1 contains a basic logic circuit.
The working principle of the integrated proximity switch system is as follows: referring to fig. 9, in order to work with one of the normally open N-pole triggered integrated proximity switches, when the integrated proximity switch 5 approaches the magnetic object 6, the magnetic induction line is increased, the magnetic density is increased, and the magnetic field reaches the magnetic field starting point BopThe integrated proximity switch 5 starts to work, when the integrated proximity switch 5 is far away from the magnetic object 6, the magnetic field intensity is gradually reduced, and when a certain distance is reached, the magnetic field closing point B is reachedRPThe integrated proximity switch 5 is off; referring to fig. 10, in order to work with one of the normally open S-pole triggered integrated proximity switches, when the integrated proximity switch 5 approaches the magnetic object 6, the magnetic induction line is increased, the magnetic density is increased, and the magnetic field reaches the magnetic field starting point BopThe integrated proximity switch 5 starts to work, when the integrated proximity switch 5 is far away from the magnetic object 6, the magnetic field intensity is gradually reduced, and when a certain distance is reached, the magnetic field closing point B is reachedRPThe integrated proximity switch 5 is off. Wherein, VOUTTo output a voltage, VOHAt a high level, VOLIs at a low level, BOPAs the magnetic field opening point, BRPAs a point of release of the magnetic field, BHIs hysteresis.
In addition, the manufacturing method of the integrated proximity switch comprises the following steps:
(1) if the magnetic layer 3 is a magnetic thin film:
cutting the Hall wafer 7 into a plurality of Hall integrated circuits 1, and correspondingly forming a plurality of chip-level integrated proximity switches;
and 4, packaging each chip-level integrated proximity switch to finish the processing of the integrated proximity switch 5.
(2) If the magnet 4 is used, then:
cutting the Hall wafer 7 into a plurality of Hall integrated circuits 1, and correspondingly forming a plurality of chip-level integrated proximity switches;
and 4, packaging each chip-level integrated proximity switch to finish the processing of the integrated proximity switch 5.
As shown in fig. 11, in one embodiment of the present invention, the integrated proximity switch may be manufactured by processing the hall wafer 7 as above, processing a plurality of integrated proximity switches 5 at a time, and then dividing the hall wafer 7 with the insulating layer 2, the magnetic thin film layer 3 or the magnet 4 into a plurality of integrated proximity switches 5 based on the hall integrated circuit 1 by cutting, which is convenient for industrial production. In another embodiment of the invention, the integrated proximity switches 5 can also be manufactured separately on the basis of the hall ics 1. Can be selected according to actual needs.
The integrated proximity switch 5 ensures the precision of the Hall switch while reducing the volume, has high integration level, is easy for full-automatic standardized production, does not need to add a small magnet on the Hall switch or a target to be detected during use, and can conveniently adjust the on-off threshold of the Hall integrated circuit 1.
The above description is only an embodiment of the present invention, and is not intended to limit the scope of the present invention, and all equivalent structural changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to other related technical fields, are included in the scope of the present invention.
Claims (9)
1. An integrated proximity switch, comprising: the Hall integrated circuit comprises a Hall integrated circuit (1) and a magnetic thin film layer (3) arranged on the back of the Hall integrated circuit (1), wherein an insulating layer (2) is arranged between the Hall integrated circuit (1) and the magnetic thin film layer (3), and the N pole of the magnetic thin film layer (3) is arranged below the upper S pole or below the upper N pole; the Hall integrated circuit (1), the insulating layer (2) and the magnetic film layer (3) are packaged into a whole.
2. An integrated proximity switch as in claim 1, wherein: the insulating layer (2) is a silicon nitride insulating layer.
3. An integrated proximity switch as in claim 1, wherein: the insulating layer (2) is a silicon dioxide insulating layer.
4. An integrated proximity switch system, comprising: comprising a magnetic body (6) and an integrated proximity switch (5) according to any of claims 1-3; the magnetic object (6) and the integrated proximity switch (5) are arranged oppositely, and a gap is reserved between the magnetic object (6) and the integrated proximity switch (5).
5. An integrated proximity switch, comprising: the magnetic circuit comprises a Hall integrated circuit (1) and a magnet (4) arranged on the back of the Hall integrated circuit (1); an insulating layer (2) is arranged between the Hall integrated circuit (1) and the magnet (4); the connecting line of the N pole and the S pole of the magnet (4) is vertical to the Hall integrated circuit (1); the Hall integrated circuit (1), the insulating layer (2) and the magnet (4) are packaged into a whole.
6. An integrated proximity switch as in claim 5, wherein: the insulating layer (2) is a silicon nitride insulating layer.
7. An integrated proximity switch as in claim 5, wherein: the insulating layer (2) is a silicon dioxide insulating layer.
8. An integrated proximity switch system, comprising: comprising a magnetic body (6) and an integrated proximity switch (5) according to any of claims 5-7; the magnetic object (6) and the integrated proximity switch (5) are arranged oppositely, and a gap is reserved between the magnetic object (6) and the integrated proximity switch (5).
9. A method of manufacturing an integrated proximity switch, comprising the steps of:
step 1, taking a Hall wafer (7), and growing an insulating layer (2) on the back of the Hall wafer (7); the insulating layer (2) is a silicon dioxide insulating layer or a silicon nitride insulating layer;
step 2, carrying out magnetron sputtering on the magnetic film layer (3) on the insulating layer (2); magnetizing the magnetic film layer (3) to enable the S pole to be under the upper N pole or the N pole to be under the upper S pole;
or, a magnet (4) is pasted on the insulating layer (2), and the connecting line of the N pole and the S pole of the magnet (4) is vertical to the Hall integrated circuit (1);
step 3, cutting the Hall wafer (7) attached with the insulating layer (2) and the magnetic film layer (3);
or cutting the Hall wafer (7) attached with the insulating layer (2) and the magnet (4);
cutting the Hall wafer (7) into a plurality of Hall integrated circuits (1) and correspondingly forming a plurality of chip-level integrated proximity switches;
and 4, packaging each chip-level integrated proximity switch to finish the processing of the integrated proximity switch (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911064394.6A CN110880927A (en) | 2019-11-04 | 2019-11-04 | Integrated proximity switch, proximity switch system and proximity switch manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911064394.6A CN110880927A (en) | 2019-11-04 | 2019-11-04 | Integrated proximity switch, proximity switch system and proximity switch manufacturing method |
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| CN110880927A true CN110880927A (en) | 2020-03-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114924419A (en) * | 2022-06-15 | 2022-08-19 | 业成科技（成都）有限公司 | Angle adjusting device, head-up display and vehicle |
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| WO2005111597A1 (en) * | 2004-05-17 | 2005-11-24 | The Circle For The Promotion Of Science And Engineering | Sensor for magnetic fine particle |
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| JP2016197561A (en) * | 2015-04-06 | 2016-11-24 | アサ電子工業株式会社 | Non-contact switch |
| CN210867636U (en) * | 2019-11-04 | 2020-06-26 | 中国科学院西安光学精密机械研究所 | Integrated proximity switch and system |
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2019
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| JPH04113684A (en) * | 1990-09-04 | 1992-04-15 | Asahi Chem Ind Co Ltd | High sensitivity hall element |
| CN1387317A (en) * | 2002-06-28 | 2002-12-25 | 何岳明 | Proximity Hall switch |
| WO2005111597A1 (en) * | 2004-05-17 | 2005-11-24 | The Circle For The Promotion Of Science And Engineering | Sensor for magnetic fine particle |
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| CN114924419A (en) * | 2022-06-15 | 2022-08-19 | 业成科技（成都）有限公司 | Angle adjusting device, head-up display and vehicle |
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