CN210839492U - C-band high-power amplifier assembly - Google Patents

Abstract

The utility model provides a C wave band high power amplifier subassembly, including 4 receipt and transmission channel, 4 GaN power amplifier, 4 annular isolator, bias control protection circuit. The transmitting end drives and amplifies 5250 MHz-5950 MHz radio frequency signals through a front stage, then the signals are amplified by a power amplifier, and interference among channels is reduced through an annular isolator. The receiving end outputs a signal after the radio frequency signal passes through the annular isolator and then is subjected to amplitude limiting amplification; the utility model discloses can satisfy C wave band output power and be greater than 20W, be the power amplifier subassembly of high reliability, miniaturization, high power, the effectual normal work of guaranteeing the gaN power amplifier tube of biasing control protection circuit.

Description

C-band high-power amplifier assembly

Technical Field

The utility model relates to a high power amplifier subassembly especially involves a C wave band high power amplifier subassembly.

Background

With the rapid development of data communication, wireless communication and aerospace systems, the importance of radio frequency power amplifiers in the fields of phased array radars, point-to-point wireless communication, electronic countermeasure systems and the like is continuously increasing. High power, high efficiency, low cost and miniaturized power amplifiers are the current research trend.

Chinese patent application number is CN 201820228660.9's utility model discloses an L ~ Ku wave band high power switch filtering power amplifier subassembly, including six single-pole six-throw switches, six power amplifier modules, six wave filters, single-pole three-throw switch, single-pole four-throw switch, power and control protection circuit, radiofrequency signal is from the public end input of six single-pole six-throw switches, six routes of output of six single-pole six-throw switches are connected to six power amplifier module's input respectively, the input of wave filter is connected respectively through the connector to the output of power amplifier module, the output of wave filter is connected with two gating ends of single-pole three-throw switch and four gating ends of single-pole four-throw switch respectively, the other gating end of single-pole three-throw switch is connected to the public end of single-pole four-throw switch, the public end of single-pole three-throw switch is connected to the radiofrequency signal output. The utility model discloses can satisfy 1.2 ~ 18GHz bandwidth, be a broadband power amplifier subassembly of high reliability, low cost, miniaturization, high gain, switch over the passageway and overcurrent protection response speed is fast.

In the above patent documents, the third generation semiconductor material represented by GaN gradually replaces the second generation semiconductor material such as GaAs by the characteristics of wide bandgap, high electron mobility, high breakdown electric field, high thermal conductivity, stable chemistry, strong radiation resistance, etc. The power amplifier based on GaN can realize higher peak power output, thereby improving the sensitivity or detection distance of the radar, the output power is more than 5 times of that based on a GaAS process circuit, and the power amplifier also has the advantages of high pressure resistance, high temperature resistance and the like, and is an ideal device for developing a solid-state power amplifier at present. However, since the GaN power amplifier tube is expensive to purchase, in the process of using the GaN power amplifier tube on a large scale, the circuit design or the improper use is easy to cause the damage of components, and the bias control protection circuit comprises a negative pressure protection module, a startup control module, an overcurrent protection module, a gate-drain power-on time sequence protection module and a negative pressure regulation module, so that the damage probability of the power amplifier tube can be greatly reduced.

Disclosure of Invention

The purpose of the invention is as follows: the utility model aims at providing a C wave band high power amplifier subassembly to not enough in the prior art, it has a high reliability, low cost, miniaturized high power amplifier subassembly.

The technical scheme is as follows: in order to achieve the above object, the utility model provides a C wave band high power amplifier subassembly, its characterized in that: the high-power-efficiency digital receiver comprises four groups of channels, wherein separation cavities are respectively arranged between every two adjacent channels, a transmitting channel and a receiving channel are respectively arranged in each group of channels, each transmitting channel comprises a pre-driver amplifier, an attenuator, a CaN power amplifier and a ring isolator, each receiving channel comprises an amplitude limiter and a low-noise amplifier, the radio-frequency signal input ends of the transmitting channels are respectively XH1, XH2, XH3 and XH4, the radio-frequency signal output ends of the receiving channels are respectively XH5, XH6, XH7 and XH8, the radio-frequency input ends of the transmitting channels are respectively XH1, XH2, XH3 and XH4, the pre-driver amplifiers are respectively connected to the CaN power amplifiers, the CaN power amplifiers are connected to the ring isolators, one ends of the ring isolators are connected to the amplitude limiters, one ends of the amplitude limiters are connected to the low-noise amplifiers are respectively connected to the radio-frequency signal output ends of the XH5, the, XH6, XH7, XH8, the RF signal output end of the transmitting channel and the RF signal input end of the receiving channel are XS5, XS6, XS7, XS8, respectively, and the XS5, XS6, XS7, XS8 are connected to the ring isolator, respectively.

As an improvement of the scheme, the final stage amplification of the transmitting channel adopts a GaN power amplifier internally integrated with two-stage or three-stage cascade amplification tube cores; the pre-drive amplifier adopts a high-gain amplifier chip with the gain fluctuation of 0.5 dB; a fixed attenuator is connected between the pre-stage amplification and the final stage amplification and is fixed by a chip resistor

As an improvement of the scheme, the power amplifier further comprises an active amplifier module, a control circuit and a bias control protection circuit, wherein the bias control protection circuit is connected with the power amplifier module, the input end of the bias control protection circuit is connected with the output end of the control circuit, and the bias control protection circuit is electrically connected with the four groups of channels.

As an improvement of the scheme, the power amplifier module is respectively a negative pressure protection module, a startup control module, an overcurrent protection module, a grid-drain electrode power-up time sequence protection module and a negative pressure adjusting module.

As an improvement of the scheme, the output end of the bias control protection circuit comprises VD1, VD2, VG1-VG4 ports, VD1 is connected with the power supply end of the pre-stage amplifier of the power amplification module, and VD2 and VG1-VG4 are respectively connected with the drain electrode and the grid electrode power supply end of the GaN power amplifier amplified by the end stages of four groups of channels.

As an improvement of the scheme, the bias control protection circuit comprises a sequential circuit, a current sampling circuit, an overcurrent protection circuit, a grid voltage bias circuit and a grid voltage switching circuit.

Has the advantages that: the utility model provides a C wave band high power amplifier module can satisfy 5250MHz ~5950MHz frequency channel, adopts solid-state power amplifier tube, high power GaN power amplifier and annular isolator to constitute a high reliability, low-cost, miniaturized high power amplifier module. The power amplifier module adopts a cascading mode and a modular design mode, so that a circuit is simplified, and higher gain is ensured. The bias protection circuit supplies power to the GaN power amplification tubes of all channels, and the starting and overcurrent protection response speeds are high.

Drawings

FIG. 1 is a schematic block diagram of a C-band high power amplifier assembly;

FIG. 2 is a functional block diagram of a bias protection circuit;

FIG. 3 is a structural diagram of a C-band high power amplifier assembly;

FIG. 4 is an assembly drawing of a C-band high power amplifier assembly;

fig. 5 is an enlarged schematic view of a portion a in fig. 4.

Detailed Description

The present invention will be further illustrated with reference to the accompanying drawings and specific embodiments, which are to be understood as merely illustrative of the invention and not as limiting the scope of the invention. It should be noted that the terms "front," "back," "left," "right," "upper" and "lower" used in the following description refer to directions in the drawings, and the terms "inner" and "outer" refer to directions toward and away from, respectively, the geometric center of a particular component.

As shown in fig. 1, the C-band high-power amplifier module includes four groups of channels, each channel has a transmitting and receiving unit, the transmitting channel includes a pre-driver amplifier, an attenuator, a power amplifier and an annular isolator, the receiving channel includes an annular isolator, a limiter, a low-noise amplifier and a bias control protection circuit of a common part, as shown in fig. 2, the bias control protection circuit serves as the common part of the four groups of channels, and is used for supplying power to the pre-driver amplifier and the final-stage power amplifier of the transmitting channel and receiving power to the limiter and the low-noise amplifier of the channels, and includes a current sampling circuit, an overcurrent protection circuit, a timing circuit, a gate voltage switching circuit and.

The C-band high-power amplifier component has the following transmitting and receiving frequency bands: 5250 MHz-5925 MHz, the harmonic wave and stray suppression of a transmitting channel can be realized, the harmonic wave suppression is as high as 40dBc, and the channel isolation is as high as 50 dBc; in order to meet the isolation between the channels and protect the high-power GaN power amplification tube, the design of an annular isolator is adopted, and in order to prevent signals between the 4 channels from interfering with each other, the design of a separation cavity is adopted between the channels.

In order to realize miniaturization, the transmitting channel of the power amplifier module comprises a front-stage driving amplifier and a final-stage power amplifier, in order to realize high gain, the transmitting output power reaches more than 43dBm, the final-stage power amplifier adopts a GaN power amplifier with a gain of up to 26dB of an internally integrated two-stage or three-stage cascade amplifying tube core, in order to realize gain flatness and high gain, the front-stage driving amplifier adopts a power amplifier with a gain of up to 33dB and a gain flatness of 0.5dB, because the front-stage gain and the final-stage gain are higher, in order to compensate the loss and the amplifying gain of each channel to be different, an attenuator is added between the two stages of internal amplification of the power amplifier module, the adjustment ensures that the whole bandwidth has higher gain consistency, in order to meet the requirement that the receiving amplifying gain of a receiving channel is not less than 15dB, and the noise coefficient is. In order to simplify the design, a modularized design method is adopted, 4 paths of receiving and transmitting channels are realized by the same circuit, the transmitting channels comprise pre-amplification by a power amplifier QPA9501SR, a final power amplifier by a power amplifier MWG801 and a fixed attenuator, and the receiving channels comprise a ring isolator, an amplitude limiter CLM-83-2W and a low-noise amplifier QPL9503 SR.

The input end of the bias protection circuit is connected with the output end K of the control circuit, the output end of the bias protection circuit comprises VD1, VD2 and VG1-VG4 ports, VD1 is connected with the power supply end of the power amplification module in the front stage, and VD2 and VG1-VG4 are respectively connected with the drain electrode and the grid electrode power supply end of the GaN power amplification tube in the 4-path final stage; the bias protection circuit comprises a time sequence circuit, a current sampling circuit, an overcurrent protection circuit, a grid voltage bias circuit and a grid voltage switching circuit; the output end of the current sampling circuit is connected with the input end of overcurrent protection, the grid voltage bias circuit adopts a negative pressure regulator LM337 and a triode to provide grid cut-off voltage VG _ off and grid rated voltage VG _ on, and the grid switching circuit is realized by adopting an analog switch of SPDT and is used for controlling the mutual switching between VG _ on and VG _ off.

The final power amplifier adopts a GaN power amplifier suitable for high gain and high power, and the GaN power amplifier tube is a depletion type power amplifier, so that the grid and drain voltages must be strictly switched on and off according to a certain sequence in order to ensure the safe and reliable operation of the power amplifier, otherwise, the power supply is easy to cause the damage of the power amplifier tube; the correct power-on and power-off sequence of the GaN power amplifier tube can be ensured by adopting the bias protection circuit.

The correct power-up sequence of the GaN power amplifier tube is as follows: 1) a gate-source voltage VGS =0V, a drain-source voltage VDS = 0V; 2) VGS reaches a rated negative pressure value VG _ off which ensures the cut-off of the drain electrode; 3) the VDS reaches the power supply voltage VD required by the drain electrode; 4) VGS is adjusted to negative voltage VG _ on corresponding to the static current required by the drain electrode; 5) the radio frequency signal is applied for normal use.

The power-off sequence of GaN is just opposite to the power-on sequence, the grid electrode is ensured to be negative pressure when the drain voltage VDS =0V, and the reliable and correct power-off sequence is as follows: 1) turning off the radio frequency signal; 2) VGS is adjusted to VG _ off; 3) the drain-source voltage VDS is reduced to 0V; 4) the gate voltage VGS is adjusted to 0V.

The bias protection circuit board is used as an important component of a power supply and a control protection circuit, power supply for each GaN power amplification tube is realized strictly according to the functional requirements, due to instantaneous time sequence abnormality caused by abnormal shutdown, GaN functional failure or chronic characteristic degradation failure can be caused immediately, the time sequence of the time sequence circuit not only ensures correct time sequences in startup and shutdown states, but also ensures correct power-off time sequence under abnormal power-off conditions, when overcurrent faults occur, the working process of the shutdown function of the overcurrent protection completely performs the functions of realizing the time sequence circuit and overcurrent monitoring and overcurrent locking according to the power-off time sequence of GaN, the transmission delay time is as low as 70ns, the response speed is high, and the grid voltage switching time is within 1 us. State locking and reference voltage raising are ingeniously realized through the diode, and functions of state inversion of the comparator and the like are realized; the grid electrode voltage bias circuit mainly comprises a negative pressure regulator LM337 and a triode, provides grid cut-off voltage VG _ off and grid rated voltage VG _ on, simultaneously the triode provides proper temperature compensation function, so that the GaN power amplification tube can ensure stable quiescent current in a full-temperature state, and relatively stable gain is ensured; the safety of the GaN power amplifier tube is guaranteed by perfect, comprehensive and correct logic time sequence and rapid fault response time, and the reliability of the power amplifier module is improved; the bias protection circuit takes the tasks of controlling the sequential startup, sequential shutdown, fault alarm and the like of the whole power amplifier assembly system and also takes the important responsibility of protecting the power amplifier tube.

In order to realize high reliability, low cost and miniaturization of the C-band high-power amplifier component, the assembly method of the component is also particularly important, and the assembly method is based on a modular design idea, and is convenient and fast in assembly and repairability.

The assembly drawing of the C-band high-power amplifier component is shown in FIGS. 3-5, and FIG. 5 shows a CaN power amplifier, which comprises the following steps:

(1) the bias control circuit board is arranged in the cavity of the front surface and fixed by screws, and the channels are separated by separating cavities;

(2) firstly, welding a heat sink to a corresponding position in a shell, and then welding a GaN power amplifier bare chip, a chip capacitor and a chip array capacitor on the heat sink in a gold welding mode;

(3) fixing the annular isolator to a corresponding position in the shell by using screws;

(4) connecting the PIN tube, the chip capacitor and the chip row capacitor to a micro-strip line of the bias control circuit board and a bonding pad of the annular isolator in a gold wire bonding mode;

(5) the power control wires pass through the housing from the back to the connector below the housing.

The technical means disclosed by the scheme of the present invention is not limited to the technical means disclosed by the above embodiments, but also includes the technical scheme formed by the arbitrary combination of the above technical features.

Claims (6)

1. A C-band high-power amplifier component is characterized in that: the high-power-consumption digital receiver comprises four groups of channels, wherein separation cavities are respectively arranged between every two adjacent channels, a transmitting channel and a receiving channel are respectively arranged in each group of channels, each transmitting channel comprises a pre-driver amplifier, an attenuator, a CaN power amplifier and a ring isolator, each receiving channel comprises an amplitude limiter and a low-noise amplifier, the radio-frequency signal input ends of the transmitting channels are respectively XH1, XH2, XH3 and XH4, the radio-frequency signal output ends of the receiving channels are respectively XH5, XH6, XH7 and XH8, the radio-frequency input ends of the transmitting channels are respectively connected with the pre-driver amplifier, the pre-driver amplifier is connected with the CaN power amplifier, the CaN power amplifier is connected with the ring isolators, one ends of the ring isolators are connected with the amplitude limiters, one ends of the amplitude limiters are connected with the low-noise amplifiers, and the low-noise amplifiers are respectively connected with the radio-frequency signal output ends of the XH5 and the amplitude limiters, XH6, XH7, XH8, the RF signal output end of the transmitting channel and the RF signal input end of the receiving channel are XS5, XS6, XS7, XS8, respectively, and the XS5, XS6, XS7, XS8 are connected to the ring isolator, respectively.

2. The C-band high power amplifier module of claim 1, wherein: the final stage amplification of the transmitting channel adopts a GaN power amplifier internally integrated with two-stage or three-stage cascade amplification tube cores; the pre-drive amplifier adopts a high-gain amplifier chip with the gain fluctuation of 0.5 dB; and a fixed attenuator is connected between the pre-stage amplification and the final-stage amplification and is fixed through a chip resistor.

3. The C-band high power amplifier module of claim 1, wherein: the power amplifier further comprises an active power amplifier module, a control circuit and a bias control protection circuit, wherein the bias control protection circuit is connected with the power amplifier module, the input end of the bias control protection circuit is connected with the output end of the control circuit, and the bias control protection circuit is electrically connected with the four groups of channels.

4. The C-band high-power amplifier module according to claim 3, wherein: the power amplification module is respectively a negative pressure protection module, a startup control module, an overcurrent protection module, a grid-drain electrode power-on time sequence protection module and a negative pressure regulation module.

5. The C-band high-power amplifier module according to claim 3, wherein: the output end of the bias control protection circuit comprises VD1, VD2 and VG1-VG4 ports, VD1 is connected with the power supply end of the pre-stage amplifier of the power amplification module, and VD2 and VG1-VG4 are respectively connected with the drain electrode and the grid electrode power supply end of the GaN power amplifier amplified in the end stage of the four groups of channels.

6. The C-band high-power amplifier module according to claim 5, wherein: the bias control protection circuit comprises a sequential circuit, a current sampling circuit, an overcurrent protection circuit, a grid voltage bias circuit and a grid voltage switching circuit.

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