CN210778620U - Stacked photovoltaic cell - Google Patents
Stacked photovoltaic cell Download PDFInfo
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- CN210778620U CN210778620U CN201921478674.7U CN201921478674U CN210778620U CN 210778620 U CN210778620 U CN 210778620U CN 201921478674 U CN201921478674 U CN 201921478674U CN 210778620 U CN210778620 U CN 210778620U
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- photovoltaic cell
- light source
- refractive
- resonance layer
- index film
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- 239000010408 film Substances 0.000 claims description 40
- 239000010409 thin film Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 238000002310 reflectometry Methods 0.000 claims description 13
- 238000010248 power generation Methods 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000011161 development Methods 0.000 abstract description 2
- 238000005457 optimization Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Photovoltaic Devices (AREA)
Abstract
The utility model provides a heap photovoltaic cell, be provided with the resonance layer between first photovoltaic cell and second photovoltaic cell, utilize resonance layer control to let the light source pass through behind first photovoltaic cell, the light source rethread resonance layer of specific wavelength and produce constructive interference and enter into second photovoltaic cell, and the light source wavelength that second photovoltaic cell can absorb is equal to the light source wavelength through resonance layer, let heap photovoltaic cell can be with conversion efficiency maximize, and can directly use the photovoltaic cell of optimization, conveniently design and development, and heap photovoltaic cell can both sides photic promotion light source rate of utilization.
Description
Technical Field
A stacked photovoltaic cell, especially using a resonance layer to connect two photovoltaic cells, and the resonance layer is used for light source with specific wavelength to pass and generating constructive interference, so as to improve the generating efficiency of the stacked photovoltaic cell.
Background
Although the conversion efficiency of a single-layer amorphous silicon thin film photovoltaic cell is lower than that of a monocrystalline silicon photovoltaic cell, because the amount of silicon is very small, the manufacturing cost is much lower, and therefore, manufacturers of amorphous silicon thin film photovoltaic cells have no way to improve the conversion efficiency as a research and development direction, at present, the conversion efficiency is mainly improved by stacking two amorphous silicon thin film photovoltaic cells absorbing different light source wavelengths, and the method is limited by the collocation of active layer materials so as to optimize the photoelectric characteristics of the photovoltaic cell, for example: the first active layer is a wide band material matched with a narrow band material of the second active layer, and semiconductor materials with high and low energy gaps are used for absorbing energy of corresponding short wavelength and long wavelength in a light source. Therefore, how to stack the optimized single-layer photovoltaic cells and increase the conversion efficiency at the same time is a topic that the related industries are demanding to research and develop.
SUMMERY OF THE UTILITY MODEL
The main objective of the present invention is to utilize a light source with specific wavelength to pass through and to connect two photovoltaic cells through a resonance layer for constructive interference generated by the light source to form a stacked photovoltaic cell, so that the stacked photovoltaic cell can maximize the conversion efficiency, and can directly use the optimized photovoltaic cell, thereby facilitating the design and development, and the stacked photovoltaic cell can receive light from both sides to improve the utilization rate of the light source.
In order to achieve the above object, in the stacked photovoltaic cell of the present invention, a resonance layer is disposed between the first photovoltaic cell and the second photovoltaic cell, and after the light source passes through the first photovoltaic cell under the control of the resonance layer, the light source with a specific wavelength passes through the resonance layer and generates constructive interference to enter the second photovoltaic cell, and the wavelength of the light source absorbed by the second photovoltaic cell is equal to the wavelength of the light source passing through the resonance layer.
In an embodiment of the stacked photovoltaic cell, the first photovoltaic cell has a first transparent substrate and a first power generation thin film disposed on a surface of the first transparent substrate, the second photovoltaic cell has a second transparent substrate and a second power generation thin film disposed on a surface of the second transparent substrate, and the resonance layer is connected between the first power generation thin film and the second power generation thin film.
In the stacked photovoltaic cell, the resonance layer is formed by sequentially stacking the first high-reflectivity low-refractive-index film, the high-reflectivity low-refractive-index film and the second high-reflectivity low-refractive-index film, the first high-reflectivity low-refractive-index film is connected to the first power generation thin film, and the second high-reflectivity low-refractive-index film is connected to the second power generation thin film.
In the stacked photovoltaic cell, the first high-reflectivity low-refractive-index film and the second high-reflectivity low-refractive-index film are made of silver or gold.
In the stacked photovoltaic cell, the high refractive index film is made of indium tin oxide, epoxy resin or titanium dioxide.
Drawings
FIG. 1 is a diagram illustrating a first embodiment of the present invention.
FIG. 2 is a diagram illustrating a second embodiment of the present invention.
List of reference numerals: 1-a first photovoltaic cell; 11-a first transparent substrate; 12-a first power generating thin film; 2-a second photovoltaic cell; 21-a second transparent substrate; 22-a second power generating film; 3-a resonance layer; 31 — a first high reflectance low refractive index film; 32-high refractive index film; 33-second high reflectance low refractive index film.
Detailed Description
Referring to fig. 1, it can be clearly seen that the stacked photovoltaic cell of the present invention comprises a first photovoltaic cell 1, a second photovoltaic cell 2, and a resonant layer 3 connected between the first photovoltaic cell 1 and the second photovoltaic cell 2, wherein:
the first photovoltaic cell 1 has a first transparent substrate 11 and a first power generation thin film 12 disposed on a surface of the first transparent substrate 11.
The second photovoltaic cell 2 has a second transparent substrate 21 and a second power generating thin film 22 provided on a surface of the second transparent substrate 21.
The resonant layer 3 is connected between the first power generating thin film 12 of the first photovoltaic cell 1 and the second power generating thin film 22 of the second photovoltaic cell 2, and the resonant layer 3 allows a light source with a specific wavelength to pass through and allows the passing light source to generate constructive interference.
By the above, when the resonant layer 3 is used to connect the first photovoltaic cell 1 and the second photovoltaic cell 2, the resonant layer 3 is only required to be designed to have the light source wavelength passing through the resonant layer 3 as the light source wavelength with the best absorption efficiency of the second photovoltaic cell 2, and after the light source passes through the first photovoltaic cell 1, only the light source with a specific wavelength generates constructive interference to enter the second photovoltaic cell 2 after passing through the resonant layer 3, so that the maximization of the photoelectric conversion efficiency can be obtained. Therefore, the problem of the active layer materials of the first photovoltaic cell 1 and the second photovoltaic cell 2 does not need to be considered, and only the resonance layer 3 and the second photovoltaic cell 2 need to be regulated and matched, so that the photovoltaic cells (1 and 2) which are optimized can be directly used for manufacturing the stacked photovoltaic cells.
As shown in fig. 2, it is clear that the resonance layer 3 is formed by sequentially laminating a first high-reflectance low-refractive-index film 31, a high-reflectance low-refractive-index film 32, and a second high-reflectance low-refractive-index film 33, wherein the first high-reflectance low-refractive-index film 31 is connected to the first power generation film 12, and the second high-reflectance low-refractive-index film 33 is connected to the second power generation film 22.
The first high-reflectivity low-Refractive-index film 31 and the second high-reflectivity low-Refractive-index film 33 are made of silver or gold, the Refractive index (Refractive index) of gold is 0.242, the Refractive index of silver is 0.05, the high-Refractive-index film 32 can be made of indium tin oxide, epoxy resin or titanium dioxide, the Refractive index of indium tin oxide is 1.8-2.0, the Refractive index of epoxy resin is about 1.5, and the Refractive index of titanium dioxide is 2.4-2.6.
Thus, when the light source penetrates into the high refractive index film 32 through the first high reflection low refractive index film 31, a path difference is generated due to a refractive index change, and a phase difference is changed due to a back-and-forth path difference, and a total phase difference obtained by the reflection at the interfaces of the first high reflection low refractive index film 31 and the high refractive index film 32 and the interface of the second high reflection low refractive index film 33 is an integral multiple of 2 pi, constructive interference of coherence occurs, and at this time, a specific wavelength band under the constructive interference can only penetrate. The materials of the high-refractive-index film 33 and the first high-reflection low-refractive-index film 31 and the second high-reflection low-refractive-index film 32 are selected and matched, the phase difference of penetrating light is calculated, the thickness of the high-refractive-index film 33 is adjusted, the desired light source penetrating waveband can be controlled, the light intensity of the penetrating light source can be enhanced due to constructive interference, the first photovoltaic cell 1 and the second photovoltaic cell 2 which are optimized can be connected through the resonance layer 3, the photoelectric conversion efficiency can be maximized through the regulation and control of the resonance layer 3, moreover, the reflectivity of the second high-reflectivity low-refractive-index film 33 of the resonance layer 3 is regulated and controlled, the light absorption of the first photovoltaic cell 1 of the stacked photovoltaic cell is increased through reflected light, and the photoelectric conversion efficiency of the stacked photovoltaic cell is improved. In addition, the first photovoltaic cell 1 and the second photovoltaic cell 2 can receive light from the first transparent substrate 11 and the second transparent substrate 21 to improve the utilization rate of the light source.
Claims (5)
1. A stacked photovoltaic cell is characterized in that a resonance layer is arranged between a first photovoltaic cell and a second photovoltaic cell, after a light source passes through the first photovoltaic cell under the control of the resonance layer, the light source with a specific wavelength passes through the resonance layer and generates constructive interference to enter the second photovoltaic cell, and the wavelength of the light source which can be absorbed by the second photovoltaic cell is equal to the wavelength of the light source which passes through the resonance layer.
2. The stacked photovoltaic cell according to claim 1, wherein the first photovoltaic cell has a first transparent substrate and a first power generating thin film disposed on a surface of the first transparent substrate, the second photovoltaic cell has a second transparent substrate and a second power generating thin film disposed on a surface of the second transparent substrate, and the resonance layer is connected between the first power generating thin film and the second power generating thin film.
3. The stacked photovoltaic cell according to claim 2, wherein the resonance layer is formed by sequentially stacking a first high-reflectance low-refractive-index film, a high-refractive-index film, and a second high-reflectance low-refractive-index film, and the first high-reflectance low-refractive-index film is connected to the first power generation thin film and the second high-reflectance low-refractive-index film is connected to the second power generation thin film.
4. The stacked photovoltaic cell of claim 3, wherein the first high-reflectivity low-index film and the second high-reflectivity low-index film are made of silver or gold.
5. The stacked photovoltaic cell of claim 3, wherein the high refractive index film is made of a material selected from the group consisting of indium tin oxide, epoxy, and titanium dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921478674.7U CN210778620U (en) | 2019-09-06 | 2019-09-06 | Stacked photovoltaic cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921478674.7U CN210778620U (en) | 2019-09-06 | 2019-09-06 | Stacked photovoltaic cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210778620U true CN210778620U (en) | 2020-06-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921478674.7U Active CN210778620U (en) | 2019-09-06 | 2019-09-06 | Stacked photovoltaic cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210778620U (en) |
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2019
- 2019-09-06 CN CN201921478674.7U patent/CN210778620U/en active Active
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