CN210743940U - Electromigration test structure - Google Patents
Electromigration test structure Download PDFInfo
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- CN210743940U CN210743940U CN202020024765.XU CN202020024765U CN210743940U CN 210743940 U CN210743940 U CN 210743940U CN 202020024765 U CN202020024765 U CN 202020024765U CN 210743940 U CN210743940 U CN 210743940U
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Abstract
The application provides an electromigration test structure, includes: the test metal wire, the protrusion monitoring wires which are located on the same layer as the test metal wire and are uniformly distributed at intervals on the periphery of the test metal wire, and the heat dissipation structure which is located below the test metal wire and is electrically connected with the test metal wire through the conductive through hole, wherein the heat dissipation structure is used for dissipating heat generated on the test metal wire. The utility model discloses in through set up and test metal wire electric connection's heat radiation structure in test metal wire below, accelerate the joule heat of test metal wire through heat radiation structure and distribute to reduce the temperature that the joule heat gathering among the semiconductor chip leads to, avoid the high temperature to cause the influence to the test result, make the test result more accurate.
Description
Technical Field
The utility model relates to a semiconductor device makes technical field, especially relates to an electromigration test structure.
Background
As the physical size of semiconductor chips is reduced and the current for chip operation is increased, the Electromigration (EM) effect becomes one of the bottlenecks in chip reliability.
In the prior art, for an electromigration test structure of a semiconductor chip, usually under the condition of high temperature and constant current, the resistance change of the test structure is monitored to obtain the failure time (TTF), and then the Black equation (TTF ═ AJ) is used-nexp(Ea/kT)) to estimate the lifetime of the chip under operating conditions.
However, joule heat generated in the test structure in the prior art has a great influence on the test result, so that the test result is inaccurate.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides an electromigration test structure to burnt ear heat produces the influence to the test result among the electromigration test structure among the solution prior art, causes the unsafe problem of test result.
In order to achieve the above object, the utility model provides a following technical scheme:
an electromigration test structure comprising: test metal wire and be located test metal wire is with the layer, and even interval distribution sets up at test metal wire is peripheral protruding monitoring line, wherein, still includes:
and the heat dissipation structure is positioned below the test metal wire and electrically connected with the test metal wire through the conductive through hole, and is used for dissipating heat generated on the test metal wire.
Preferably, the heat dissipation structure includes:
a plurality of metal layers; and an interlayer dielectric layer positioned between two adjacent metal layers;
the multiple metal layers are electrically connected with each other through the conductive through holes in the interlayer dielectric layers.
Preferably, each layer of the metal layer comprises a plurality of first metal strips arranged in parallel and a second metal strip vertically connected with the first metal strips, and the second metal strip is connected with the plurality of first metal strips through wires.
Preferably, the total area of the first metal strip and the second metal strip in the metal layer is larger than the area of the test metal line.
Preferably, the test circuit further comprises a pad which is arranged in the same layer with the test metal line and is insulated from the test metal line.
Preferably, the pad is electrically connected to the metal layer closest to the test metal line through a conductive via.
Preferably, the pad and the test metal line are both made of aluminum.
Preferably, the number of layers of the metal layer is greater than 3.
Preferably, the interlayer conductive vias between adjacent metal layers are arranged in a linear array.
According to the above technical solution, the utility model provides an electromigration test structure includes: the test metal wire, the protrusion monitoring wires which are located on the same layer as the test metal wire and are uniformly distributed at intervals on the periphery of the test metal wire, and the heat dissipation structure which is located below the test metal wire and is electrically connected with the test metal wire through the conductive through hole, wherein the heat dissipation structure is used for dissipating heat generated on the test metal wire. The utility model discloses in through set up and test metal wire electric connection's heat radiation structure in test metal wire below, accelerate the joule heat of test metal wire through heat radiation structure and distribute to reduce the temperature that the joule heat gathering among the semiconductor chip leads to, avoid the high temperature to cause the influence to the test result, make the test result more accurate.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of an electromigration test structure provided in the prior art;
FIG. 2 is a schematic cross-sectional view taken along line A-A of FIG. 1;
FIG. 3 is a schematic cross-sectional view taken along line B-B of FIG. 1;
fig. 4 is a front view of an electromigration test structure according to an embodiment of the present invention;
fig. 5 is a top view of a metal layer according to an embodiment of the present invention;
fig. 6 is a top view of a connection relationship between a pad and a testing metal line and a metal layer provided in an embodiment of the present invention;
fig. 7 is a schematic diagram of a heat dissipation path of the electromigration test structure according to the present invention.
Detailed Description
As described in the background section, joule heat generated in the test structure of the related art has a large influence on the test result, resulting in inaccurate test results.
The inventors have found that the above phenomenon occurs because the EM evaluation in the prior art generally employs the electromigration test structure shown in fig. 1, which includes: the test metal wire and the protrusion monitoring wires are positioned on the same layer of the test metal wire and are uniformly distributed on the periphery of the test metal wire; FIG. 2 is a schematic cross-sectional view taken along line A-A of FIG. 1; fig. 3 is a schematic cross-sectional view taken along line B-B in fig. 1. Referring to fig. 2 and 3, the first metal layer includes a test metal line M1 and protrusion monitor lines Extrusion distributed around the periphery of the test metal line. The test metal line M1 absorbs heat only by means of the protrusion monitor line Extrusion, and its heat dissipation effect is poor. The redundant metal wire DM (dummy metal) is arranged outside the protrusion monitoring wire exclusion, the redundant metal wire DM can not directly influence the circuit, the balance of the metal density near the test structure can be kept, and the flatness of the chip is improved.
Referring to fig. 1, in the constant thermal electro-migration test (Iso EM), a four-terminal method is used to measure the resistance of a test metal line, where F is Force, which represents a sensing current node, and includes F1 and F2 connected to two ends of the test metal line, respectively, and a constant current source connected to the two ends of the test metal line, where the constant current value flowing through the two ends is I; s is Sense, which indicates a sensing voltage node, and includes S1 and S2 connected to both ends of the test metal line, and a voltage source, where the test voltages are Vs1 and Vs2, respectively, and the sample resistance R of the test metal line obtained by the four-terminal method is (Vs2-Vs 1)/I). A certain voltage is applied between the protrusion monitoring line and the test metal line, so that whether the short circuit phenomenon exists between the test metal line and the protrusion monitoring line can be monitored. Since joule heat generated by the current in the test metal line maintains its temperature constant, metal atoms within the test metal line migrate due to momentum transfer with electrons. In fact, in the Iso EM test, when the first metal layer structure is tested, the problems of burning out the metal pad, damaging the probe and the like are easy to occur. The possible reason is that when the cavity in the test metal wire is formed, the resistance jumps to form large heat, so that the test metal wire generates high temperature, and because the heat conducting property of the dielectric material is poor, and the first metal layer is arranged on the bottom layer of the chip, the heat dissipation path is long, so that the high heat generated by local high temperature is not easy to dissipate, and the metal pad is burnt out and the probe is damaged.
Meanwhile, for the test metal wire made of the Al material on the top layer of the wafer, the wire width and the thickness are large, the working current is high, and the test metal wire is often accompanied with remarkable Joule heat in the actual EM test. On the one hand, joule heating affects the actual temperature of the test structure, which affects the activation energy (Ea) estimation accuracy of the metal interconnects according to the Black equation. On the other hand, in order to reduce the influence of joule heat on the test, the test needs to be performed at a lower current, and the test period is prolonged.
Based on this, the utility model provides an electromigration test structure, include: test metal wire and be located test metal wire is with the layer, and even interval distribution sets up the peripheral protruding monitoring line of test metal wire, its characterized in that still includes:
and the heat dissipation structure is positioned below the test metal wire and electrically connected with the test metal wire through the conductive through hole, and is used for dissipating heat generated on the test metal wire.
The utility model provides an electromigration test structure includes: the test metal wire, the protrusion monitoring wires which are located on the same layer as the test metal wire and are uniformly distributed at intervals on the periphery of the test metal wire, and the heat dissipation structure which is located below the test metal wire and is electrically connected with the test metal wire through the conductive through hole, wherein the heat dissipation structure is used for dissipating heat generated on the test metal wire. The utility model discloses in through set up and test metal wire electric connection's heat radiation structure in test metal wire below, accelerate the joule heat of test metal wire through heat radiation structure and distribute to reduce the temperature that the joule heat gathering among the semiconductor chip leads to, avoid the high temperature to cause the influence to the test result, make the test result more accurate.
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 4, fig. 4 is a front view of an electromigration test structure according to an embodiment of the present invention, including:
the testing device comprises a testing metal wire 10 and protrusion monitoring wires (not shown in the figure) which are positioned on the same layer of the testing metal wire 10 and are uniformly distributed at intervals and arranged on the periphery of the testing metal wire;
and a heat dissipation structure 20 located below the test metal line 10 and electrically connected to the test metal line 10 through a conductive via V1, wherein the heat dissipation structure 20 is configured to dissipate heat generated on the test metal line.
In this embodiment, the specific manner of the heat dissipation structure is not limited, and optionally, as shown in fig. 4, the heat dissipation structure includes: a plurality of metal layers M2-M4; and interlayer dielectric layers C1-C3 positioned between two adjacent metal layers; the multiple metal layers M2-M4 are electrically connected with each other through conductive through holes V2-V3 positioned in the interlayer dielectric layers C1-C3.
It should be noted that, in this embodiment, a specific shape of each metal layer is not limited, and optionally, in order to increase a heat dissipation area of the metal layer, a top view of the metal layer in this embodiment may be as shown in fig. 5, where each metal layer includes a plurality of first metal strips M01 arranged in parallel, and a second metal strip M02 connected to the first metal strips M01 perpendicularly, and the second metal strip M02 is connected to a plurality of first metal strips M01 through wires.
In this embodiment, the shapes of each metal layer may be the same or different, and for convenience of setting, the shapes of the multiple metal layers in this embodiment are the same, and are both arranged correspondingly in the upper and lower layers, so as to facilitate the alignment setting of the conductive through holes in the interlayer dielectric layer. That is, the interlayer conductive through holes between the adjacent metal layers are arranged in a straight line.
Since the metal layer is used for dissipating heat of the test metal line, in this embodiment, the total area of the first metal strip and the second metal strip in the metal layer is larger than the area of the test metal line. That is, the area of the metal layer is larger than that of the test metal line, so that the heat dissipation area is increased, and the heat dissipation efficiency is improved.
It should be noted that, in the electromigration test structure, as shown in fig. 4, a pad 30 which is disposed in the same layer as the test metal line and insulated from each other is further included, and the pad 30 is used as a voltage or current access node. In this embodiment, the bonding pad may also be electrically connected to the metal layer, thereby increasing the heat dissipation of the bonding pad. Fig. 6 is a top view of the connection relationship between the pad 30 and the test metal line 10 and the metal layer.
In this embodiment, the material of the pad and the test metal line is not limited, and optionally, the material of the pad and the material of the test metal line are both aluminum. Similarly, the number of metal layers is not limited in this embodiment, and the greater the number of metal layers, the more favorable the heat dissipation, however, the greater the number of layers, the greater the volume occupation of the chip, which is optional in this embodiment, the number of metal layers is greater than 3.
As shown in fig. 7, it is a schematic diagram of a heat dissipation path of the electromigration test structure provided by the present invention; since the conductive via and the metal layer have better thermal conductivity than an interlayer dielectric (IMD) between the metal layers, the heat dissipation rate is enhanced by the physical connection between the metal layers, as indicated by the white vertical arrows in fig. 7. In addition, the heat dissipation area is increased by the laminated structure of the through holes and the mesh-like metal layers, as indicated by heat dissipation channels indicated by black arrows in fig. 7.
The utility model provides an electromigration test structure includes: the test metal wire, the protrusion monitoring wires which are located on the same layer as the test metal wire and are uniformly distributed at intervals on the periphery of the test metal wire, and the heat dissipation structure which is located below the test metal wire and is electrically connected with the test metal wire through the conductive through hole, wherein the heat dissipation structure is used for dissipating heat generated on the test metal wire. The utility model discloses in through set up and test metal wire electric connection's heat radiation structure in test metal wire below, accelerate the joule heat of test metal wire through heat radiation structure and distribute to reduce the temperature that the joule heat gathering among the semiconductor chip leads to, avoid the high temperature to cause the influence to the test result, make the test result more accurate.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. An electromigration test structure comprising: test metal wire and be located test metal wire is with the layer, and even interval distribution sets up the peripheral protruding monitoring line of test metal wire, its characterized in that still includes:
and the heat dissipation structure is positioned below the test metal wire and electrically connected with the test metal wire through the conductive through hole, and is used for dissipating heat generated on the test metal wire.
2. The electromigration test structure of claim 1, wherein said heat dissipation structure comprises:
a plurality of metal layers; and an interlayer dielectric layer positioned between two adjacent metal layers;
the multiple metal layers are electrically connected with each other through the conductive through holes in the interlayer dielectric layers.
3. The electromigration test structure of claim 2, wherein each of the metal layers comprises a plurality of first metal strips arranged in parallel, and a second metal strip connected to the first metal strips perpendicularly, and the second metal strip is electrically connected to the plurality of first metal strips.
4. The electromigration test structure of claim 2, wherein a total area of the first metal strip and the second metal strip in the metal layer is greater than an area of the test metal line.
5. The electromigration test structure of claim 2, further comprising a pad disposed in a same layer as the test metal line and insulated from each other.
6. The electromigration test structure of claim 5, wherein said pad is electrically connected to a metal layer closest to said test metal line by a conductive via.
7. The electromigration test structure of claim 5 or 6, wherein the pad and the test metal line are both made of aluminum.
8. The electromigration test structure of claim 2, wherein the number of metal layers is greater than 3.
9. The electromigration test structure of claim 1, wherein the conductive vias between adjacent ones of the metal layers are arranged in a linear array.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020024765.XU CN210743940U (en) | 2020-01-06 | 2020-01-06 | Electromigration test structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020024765.XU CN210743940U (en) | 2020-01-06 | 2020-01-06 | Electromigration test structure |
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| CN210743940U true CN210743940U (en) | 2020-06-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116454070A (en) * | 2023-06-16 | 2023-07-18 | 合肥晶合集成电路股份有限公司 | Semiconductor test structure and semiconductor device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116454070A (en) * | 2023-06-16 | 2023-07-18 | 合肥晶合集成电路股份有限公司 | Semiconductor test structure and semiconductor device |
| CN116454070B (en) * | 2023-06-16 | 2023-09-01 | 合肥晶合集成电路股份有限公司 | Semiconductor test structure and semiconductor device |
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