CN210723002U

CN210723002U - Heat abstractor and photovoltaic board power station based on semiconductor wafer

Info

Publication number: CN210723002U
Application number: CN201922448230.5U
Authority: CN
Inventors: 刘小江
Original assignee: Individual
Current assignee: Individual
Priority date: 2019-12-31
Filing date: 2019-12-31
Publication date: 2020-06-09
Anticipated expiration: 2029-12-31

Abstract

The utility model provides a heat dissipation device based on a semiconductor wafer, which comprises a semiconductor wafer and at least one heat conduction component; a fluid channel is formed on the flow guide heat transfer element; the heat dissipation device can realize heat transfer between the first end face and the second end face of the semiconductor wafer; alternatively, the heat sink can achieve thermoelectric generation between the first end face and the second end face of the semiconductor wafer. The heat dissipation device provided by the utility model can rapidly absorb the heat of the chip and the photovoltaic panel and take away the heat generated by the chip in time; the semiconductor thermoelectric generation wafer is provided as a heat source, the purpose of semiconductor thermoelectric generation is realized by utilizing the heat, the effect of one action of two can be obtained, the semiconductor thermoelectric generation wafer can be widely applied to many fields such as large data centers, telecommunication rooms, photovoltaic power generation fields and the like, and the semiconductor thermoelectric generation wafer can realize thermoelectric generation while radiating heat for photovoltaic panels, LED lamps and chips, and can ensure multiple purposes of efficient, stable and reliable operation of the photovoltaic panels, the LED lamps and the chips.

Description

Heat abstractor and photovoltaic board power station based on semiconductor wafer

Technical Field

The utility model relates to a thermotechnical heat dissipation technical field especially relates to a heat abstractor, photovoltaic board power station based on semiconductor wafer.

Background

The amazing power consumption of China data center, which exceeds the sum of the power generation of the three gorges plus the GEA dam, has led many researchers to study various chip cooling technologies, and liquid cooling is becoming the key to the bureau of the business. Statistics data centers have shown more than half the energy consumption for cooling equipment, which has become the key point of the bottleneck in line development. Although air cooling is still the most commonly used technique in the industry, more and more servers are beginning to choose the cooling mode of "bathing" to obtain the cooling mode with lower energy consumption, but the cooling mode of "bathing" also brings risks to the reliability of the servers.

In 2017, the total electricity consumption of the Chinese data center reaches 1200-1300 hundred million kilowatt hours, and the number exceeds the sum of the electricity generation of the power plants of the three gorges dam and the Guzhou dam. According to IDC predictions, the power consumption of the Chinese data center was 2962 hundred million kilowatt-hours in 2020 and was as high as 3842.2 million kilowatt-hours in 2025.

In order to guide the guidance opinions and criteria of 'data center construction', the 'liquid cooling' is also a line and row focus technology. According to a '2019 research report on green computing and sustainable development of Chinese enterprises', published by IDC, more than 50% of large-scale enterprises under investigation have deployed and used a modular data center, liquid cooling and other 'green computing' technologies on a large scale.

Liquid cooling was as early as half a century 1966, and IBM corporation first applied liquid cooling systems to System/360 model 91 mainframe computers, which led the technological tide at that time, and the ultra-high performance was used in scientific computing fields such as space exploration and global climate prediction.

Since then, liquid cooling technology has been active in the server and host areas for a long time. According to the understanding, the liquid cooling technology is established in 2012 by the middle-department eosin, the cold plate type liquid cooling server of the first standardized mass production in China is provided in 2015, the cold plate liquid cooling technology is provided for the original installation of the earth system numerical simulation device for researching the relation between circle layers such as an atmospheric ring, a biosphere and the like in the same year, and the first scale deployment of the liquid cooling in China is realized. The Chinese eosin realizes the first large-scale deployment of blade type immersion phase change liquid cooling technology worldwide. The heat is taken away mainly through the boiling process of the cooling liquid, and the effect is more obvious. At present, the number of liquid cooling servers deployed by the light accumulation in the department of China is tens of thousands, liquid cooling is accumulated enough in the technology, and the replacement of air cooling is only a time problem.

The power of an Intel (Intel) Mobilep4-M chip is 30 watts, while the power consumed by a Pentium4@ GHz chip is up to 75 watts, so that the stable working performance of the chip can be reduced due to high temperature caused by visible current, the error rate is increased, and the electrical performance, the working frequency, the mechanical strength and the reliability of the chip can be directly influenced by thermal stress formed between the inside of a module and the external environment of the module. The chief technical officer responsible for chip internal design, the Inte corporation, patengin, noted: "at present, we are limited only by the cost of production when designing and manufacturing chips. However, in view of the eye, power consumption and heat dissipation become fundamental limitations, and we must carefully consider these two issues in the overall chip design. If the problems of chip energy consumption and heat dissipation are not solved, the development space of a computer is greatly restricted, and the internal temperature of the chip can reach the level of a high-temperature gas nozzle when a rocket is launched. Therefore, in order to ensure high reliability and to maximize the performance of the device, great attention should be paid to the heat transfer design work. Due to the wide range of applications of chips, the corresponding cooling market demand is very huge. The number of heat dissipation components, such as fans and fins, required for computer CPUs is increasing from about 50% to 100% every year.

The working frequency of the chip is greatly limited by the temperature of the chip, in other words, the heat generated by the chip is inevitably higher than the past level due to the increase of the working frequency of the chip. On the other hand, the reliability of electronic devices decreases by 25% for every one degree increase when operating at 70 ℃ to 80 ℃. Therefore, how to effectively remove the extremely high heat generation amount and keep the chip temperature at a low level has become an urgent problem to be solved, and in fact, the problem is not only solvedSimilar and urgent heat dissipation and cooling needs exist for computer chips, such as avionics, power electronics, optoelectronic devices, and recently rapidly developed micro-nano electromechanical systems, biochips, and the like, and the requirements may be even higher in some cases, such as: some heat flow density is as high as 10 w/cm². Besides the need of having strong heat dissipation capability, the working characteristics of the chip determine that the cooling system of the chip also needs to meet the requirements of reliability, cost performance and integration. The reliability of the cooling system is of great importance to the proper operation of the chip, and once the cooling fails, the chip can be burnt out. Although the temperature sensing element can be arranged to detect whether the temperature chip is burnt or not at any time. As the power consumption of the chip increases, the liquid cooling scheme will replace air cooling. At present, liquid cooling does not replace air cooling completely yet, and the liquid cooling design is more complicated mainly, needs the configuration circulating pump, valve, fluid control component, and liquid cooling operating period has also been decided to these component self life, and its reliability receives certain restriction.

In view of subdivision, board cooling and chip cooling may be divided. A chip manufacturer may intervene in the existing solution of radiating fins, water pumps and cold heads, or intervene in the links of relatively large system cooling, board card cooling and the like. Chip manufacturers mainly aim to develop cooling schemes with better integration on chips, such as chip cooling by using MEMS technology.

The urgent requirement of chip technology development on high-performance cooling and the wide market space of practical application enable the research on the heat dissipation and cooling of a micro system of a chip with extremely high heat flux density to become a very important and active research field. Especially the external thermal resistance of external heat dissipation devices, which needs to be started from the cooling method, the material structure and the system level optimization design.

From the aspect of heat dissipation, chip cooling can be divided into passive and active heat dissipation. The former is characterized in that the chip temperature always works above the ambient temperature without refrigeration equipment, while the latter must contain refrigeration related equipment for obtaining a lower temperature, so that the chip temperature can be reduced to a level lower than the ambient temperature. The latter is certainly convenient for improving the working performance of the chip, but the reliability is lower than the former, and more energy consumption is needed, so that more heat is discharged to the environment, and the heat is finally discharged to the environment by adopting a passive heat dissipation mode.

The medium for conveying heat in the chip cooling relates to five types of fluid (gas and liquid), phonon, electron and photon. At present, a fan and radiating fin radiating mode is generally adopted, namely a typical air cooling mode, airflow distribution is improved through expanding fins, the radiating capacity of a mode of increasing wind pressure and wind volume is nearly limited, after all, the surface area of a chip is too small, and the space of a server is limited, so that the mode is difficult to adapt to the requirement of continuously increasing power consumption, particularly when portable equipment such as a notebook computer is limited to a narrow space. The unit heat capacity of the liquid is much larger than that of the air, so that the cooling mode using the liquid as the circulating working medium can provide higher cooling efficiency, and is expected to be a better selection test, and if the phase change heat transfer is considered, the heat transfer with high energy density is more favorably realized.

In the following, the importance of heat dissipation of the photovoltaic panel is seen, generally, the larger the illumination intensity is, the higher the power generation efficiency is, the best output load can be achieved when the illumination intensity is 800 w/square meter, and the output load can be increased from 12% in summer to 16% in winter. It can be seen that the photoelectric conversion coefficient also varies depending on the seasonal environment. The conversion coefficient gradually increases from 9-10% to 13-14% in sunny days, and the conversion coefficient is reduced because the solar elevation angle is gradually reduced in the period, but for the photovoltaic panel which is installed in an inclined mode, the conversion coefficient is reduced because the energy received by the photovoltaic panel is reduced from 900 w/square meter to 800 w/square meter at noon every day, the influence is not large, and the temperature drops from twenty-few degrees to ten-few degrees in autumn to winter, so that the conversion efficiency is increased finally. The photoelectric conversion efficiency of the solar cell increases along with the temperature reduction, and the conversion efficiency can increase by 4-5% when the temperature is reduced by 40 ℃.

The light intensity, the temperature and the cloud have obvious influence on the photoelectric conversion efficiency of the photovoltaic panel, and in northeast, the efficiency is reduced due to the increase of the temperature, and the efficiency can be changed from about 10% to 16% from summer to winter; and the change of the light intensity of sunrise and sunset every day can be from a few percent to a dozen percent in photoelectric conversion efficiency. Because daily change of the environment is inevitable, the generated energy obtained by calculating the photovoltaic panel by daily average conversion efficiency is reasonable. The influence of the climate on the power generation of the photovoltaic panel can be measured by the monthly and annual changes of the daily average conversion efficiency value.

The photoelectric conversion efficiency of the photovoltaic panel is increased along with the cold weather, and can be increased from 12% in summer to 16% in winter when the illumination intensity is 800 w/square meter output load is optimal.

Looking at the importance of cooling and heat dissipation of the LED lamp, the LED lamp is permanently damaged due to the high working temperature of the LED lamp, and the LED efficiency is rapidly reduced due to the temperature exceeding the temperature born by the chip, so that the LED lamp generates significant light attenuation or even is damaged. When the temperature exceeds 120 ℃, the encapsulant material will turn to a rubbery transition and the coefficient of thermal expansion rises dramatically, leading to open circuits and failure of the LED. The service life of the LED is represented by light decay, i.e. the time is longer and the brightness is lower and lower until the LED is finally extinguished, and the service life is cut off when the light decay is 30%. In addition, under high temperature conditions, micro-defects in the material and impurities from the interface and the electrode also cause the light emitting region to form a large amount of deep energy levels, which also accelerates the light decay of the LED device. Therefore, high temperature is a major source of LED light degradation and shortened LED lifetime. The service life of the catalyst is shortened from 50000 hours to 20000 hours when the temperature is increased from 115 ℃ to 135 ℃.

The luminous efficiency of the LED is reduced due to the increase of the temperature, and the forbidden bandwidth is reduced due to the increase of the electron and hole concentration of the LED due to the increase of the temperature; the probability of the compound radiation of electrons and holes in the potential well is reduced, so that the non-radiation recombination generates heat, and the internal quantum efficiency of the LED is reduced; when the temperature rises, the blue light wave peak of the chip can be shifted to the long wave direction, so that the long wave emitted by the chip is not matched with the wavelength excited by the fluorescent powder, and the external light extraction efficiency of the white light LED can be reduced; as the temperature rises, the quantum efficiency of the fluorescent powder is reduced, the light emission is reduced, and the external light extraction efficiency of the LED is reduced; the performance of the silica gel is greatly influenced by the ambient temperature, and along with the temperature rise, the thermal stress inside the silica gel is increased, so that the refractive index of the silica gel is reduced, and the luminous efficiency of the LED is influenced.

No matter be the photovoltaic board is also good, still the chips such as server computer chip and LED are still good, the produced temperature of their during operation greatly influences its efficiency and its life, in order to solve above-mentioned problem chip job stabilization nature and reliability in addition, the utility model discloses an adopt semiconductor refrigeration wafer to cool off chip and photovoltaic board to cooperate suitable heat conduction mode to adopt the water-cooling method, because the water-cooling is more advantageous than the forced air cooling, the water-cooling mode power consumption still less, because the wet bulb temperature that can realize than ambient air temperature is still low in the evaporation of water. Through the utility model discloses a relevant flow design still utilizes the produced heat of chip to carry out thermoelectric generation simultaneously, and the chip heat dissipation of especially big data operation center is an old and difficult problem, and it is puzzled that all do all can all be all the world, establishes data center at north pole or seabed for the developed country a bit in order to reduce the energy consumption, because data center has surpassed more than half of whole data center electric energy consumption for its power consumption of cooling chip. According to the law of conservation of energy, it is known that even if all electric energy consumed by the work of a data center server is converted into heat energy, the electric energy which exceeds the electric energy converted into the heat energy does not need to be used for cooling the data center server, namely the electric energy consumed for cooling the part of heat energy exceeds the cooled heat energy by several times, because the chip area is too small, the temperature of the chip is very high, and the heat flow density of some chips is as high as 10 w/cm²The large heat flow density needs hundreds of times of heat dissipation area to deal with the heat exchange of air, in a very limited space, how to connect the heat dissipation fins is simply impossible, because the heat exchange coefficient of air is several orders of magnitude smaller than that of a chip, how to bring the heat of the chip into the air is really very troublesome, the difficulty of taking away the heat of a very small area similar to the high heat flow density of mass points is very large, many technologists make great efforts, and many heat dissipation modes are not ideal by design innovation. Because the integration degree of the chip is further increasedThe improvement, although the power consumption of the whole chip is reduced, the heat produced by the unit volume of the chip is not reduced, but the heat dissipation treatment becomes more glaring, the effect meaning of the traditional mode of cooling the chip by increasing the air volume is not large, the end of the traditional mode is reached, the strategy must be changed, the large-scale refrigeration is changed into the high-intensity refrigeration, although the high-intensity refrigeration mode is also adopted at present, for example, a semiconductor refrigeration sheet is used for cooling the chip, the chip heat of the semiconductor refrigeration cooling chip is brought into the air and is finished by adopting a heat pipe, the cost is high, the heat taking speed is not considerable, because the heat pipe heat dissipation fins cannot expand more heat dissipation fins in the environment to exchange heat aiming at the air, the circulation speed of the variable medium in the heat pipe is limited, the remote heat transmission cannot be realized, and the heat dissipated is still remained in a machine room, and the temperature of the machine room needs to be reduced for the second time, so that the consumed energy is huge. The cooling method of blade type immersion developed recently can realize the long-distance heat transmission, but the structure is complex, the cost is high, the occupied machine room space is large, especially the reliability of chip operation is reduced, and the confusion caused by the existence of the condensed water is mainly.

SUMMERY OF THE UTILITY MODEL

The utility model provides a technical problem provide a heat abstractor based on semiconductor wafer to solve the technical problem of the heat abstractor heat dispersion of chip is not good enough or lack thermoelectric generation's technical design among the prior art.

In order to solve the above technical problem, the present invention provides a heat dissipation device based on a semiconductor wafer, which includes a semiconductor wafer and at least one heat conduction assembly; the heat conducting component comprises a heat conducting plate, heat conducting ribs and a flow guiding heat transfer piece, the heat conducting ribs are vertically arranged on the heat conducting plate, the flow guiding heat transfer piece penetrates through the heat conducting ribs, and a fluid channel is formed on the flow guiding heat transfer piece;

the first end face of the semiconductor wafer is attached to the heat conducting plate, and the second end face of the semiconductor wafer is attached to an external heat dissipation piece; a cold fluid passes through the fluid channel;

or the semiconductor wafer is clamped between the two heat conducting plates; two fluid channels of the two heat-conducting plates respectively pass through two fluid flows which have temperature difference and flow directions opposite to each other;

the electric arm of the first end face and the electric arm of the second end face of the semiconductor wafer are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer;

or the electric arm of the first end face and the electric arm of the second end face of the semiconductor wafer are respectively connected with an electric appliance load so as to realize temperature difference power generation between the first end face and the second end face of the semiconductor wafer.

Preferably, when the first end face of the semiconductor wafer is attached to the heat conducting plate and the second end face of the semiconductor wafer is attached to the external heat dissipation member;

the first end face of one semiconductor wafer is attached to one heat conduction plate; or the first end faces of the plurality of semiconductor wafers are attached to one heat conduction plate; the second end face of one semiconductor wafer is attached to one heat dissipation piece; or, the first end faces of the plurality of semiconductor wafers are attached to one heat dissipation member.

Preferably, the number of the flow-guiding heat transfer elements is at least one.

Preferably, the flow-guiding heat transfer element is a flow-guiding column or a flow-guiding pipe;

the diversion column is a single-hole diversion column or a multi-hole diversion column;

the honeycomb duct is a plurality of in quantity.

Preferably, in one group of the heat dissipation devices, the first end surface of the semiconductor wafer is attached to the heat conduction plate, and the second end surface of the semiconductor wafer is attached to an external heat dissipation member;

the fluid channels of the heat conducting assemblies are communicated in sequence to form a serial connection mode;

or the same ends of the fluid channels of all the heat conducting assemblies are communicated to form a parallel connection mode;

or the fluid channel of each heat conduction assembly is divided into two small groups, and in one small group of heat conduction assemblies, the fluid channels are communicated in sequence; in the other group of heat conducting assemblies, the same ends of the fluid channels of all the heat conducting assemblies are communicated, and the fluid channels in the two groups of heat conducting assemblies are communicated to form a series-parallel connection mode;

when the semiconductor wafer is clamped between the two heat conducting plates in the other group of heat dissipation devices;

the fluid channels on the same side of the semiconductor wafer are communicated in sequence to form a serial form;

or the same ends of the fluid channels of the heat conduction assemblies are communicated to form a parallel connection mode;

or the fluid channels of each heat conduction assembly are divided into two small groups, and in one small group of heat conduction assemblies, the fluid channels positioned on the same side in the semiconductor wafer are communicated in sequence; in the other group of heat conducting assemblies, the same ends of the fluid channels of the heat conducting assemblies are communicated; the fluid channels in the two small groups of heat conducting assemblies are communicated to form a series-parallel connection mode.

Preferably, when the first end face of the semiconductor wafer in the group of heat dissipation devices is attached to the heat conduction plate, the second end face of the semiconductor wafer is attached to the external heat dissipation member, and the electric arm of the first end face and the electric arm of the second end face of the semiconductor wafer are both connected to the dc power supply device, so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer;

the heat dissipation device also comprises a circulating pump and a cooling tower, wherein the circulating pump is used for introducing the cooling liquid in the cooling tower into the fluid channel and then returning the cooling liquid to the cooling tower;

the cooling tower is used for reducing the temperature of cooling liquid entering the tower.

Preferably, when the semiconductor wafer in the other group of heat dissipation devices is clamped between the two heat conduction plates, and the electric arm on the first end face and the electric arm on the second end face of the semiconductor wafer are respectively connected with an electric load, so as to realize thermoelectric power generation between the first end face and the second end face of the semiconductor wafer;

the circulating pump is used for introducing the cooling liquid in the cooling tower into the fluid channels in one group of the heat dissipation devices, then sending the cooling liquid into the fluid channels on one side of the semiconductor wafer in the other group of the heat dissipation devices, and finally sending the cooling liquid back to the cooling tower;

the cooling tower is used for reducing the temperature of cooling liquid entering the tower;

and the circulating pump is also used for sending the cooled cooling liquid to the other group of fluid channels positioned on the other side of the semiconductor wafer in the heat dissipation device and then sending the cooling liquid back to the cooling tower.

In order to solve the technical problem, the utility model also provides a photovoltaic panel power station, which comprises a plurality of photovoltaic panel components, a circulating pump, a cooling tower and the heat dissipation device based on the semiconductor wafer;

the first end face of the semiconductor wafer in the group of heat dissipation devices is attached to the heat conduction plate, the second end face of the semiconductor wafer is attached to the external heat dissipation member, and the electric arm of the first end face and the electric arm of the second end face of the semiconductor wafer are both connected with the direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer; wherein the heat sink is the photovoltaic panel assembly;

the semiconductor wafer in the other group of heat dissipation devices is clamped between the two heat conduction plates, and the electric arm on the first end face and the electric arm on the second end face of the semiconductor wafer are respectively connected with an electric appliance load so as to realize temperature difference power generation between the first end face and the second end face of the semiconductor wafer;

The utility model provides an among the heat abstractor based on semiconductor wafer, the heat dissipation piece can be chip or photovoltaic board.

The electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer; therefore, the semiconductor wafer is utilized between the heat dissipation piece and the cold fluid, high-efficiency heat transfer is realized, and high-efficiency heat dissipation of the heat dissipation piece is realized.

Or the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are respectively connected with an electric load so as to realize the thermoelectric power generation between the first end and the second end of the semiconductor wafer. Therefore, the temperature difference between two end faces of the semiconductor is innovatively utilized to carry out temperature difference power generation, and the utilization rate of energy is greatly improved.

Drawings

Fig. 1 is a schematic structural diagram of a heat dissipation device according to a first embodiment of the present invention;

fig. 2 is a schematic structural diagram of a heat dissipation device according to a second embodiment of the present invention;

fig. 3 is a schematic structural diagram of a heat dissipation device according to a third embodiment of the present invention;

fig. 4 is a schematic structural diagram of a heat dissipation device according to a fourth embodiment of the present invention;

fig. 5 is a schematic structural diagram of a fifth embodiment of a heat dissipation device according to the present invention;

fig. 6 is a schematic structural diagram of a sixth embodiment of a heat dissipation device according to the present invention;

fig. 7 is a schematic structural diagram of a seventh embodiment of a heat dissipation device according to the present invention;

fig. 8 is a schematic structural diagram of an eighth embodiment of a heat dissipation device according to the present invention;

fig. 9 is a schematic design diagram of a preferred embodiment of the photovoltaic panel power plant provided by the present invention.

The reference numbers illustrate:

1/8-semiconductor wafer, 2/10-heat conducting plate, 3/11-heat conducting rib, 4/5/9-flow guiding heat conducting element, 6/12-fluid channel, 7/14-heat radiating element;

13-the back of the photovoltaic panel;

15-photovoltaic panel power station, 16/22-cooling tower, 17/21-circulating pump;

18-another set of heat sinks, 19-one set of heat sinks, 20-represents a plurality of thermally conductive components.

The objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

It should be noted that all the directional indicators (such as upper, lower, left, right, front and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is changed accordingly.

The utility model provides a heat abstractor based on semiconductor wafer 1. For convenience of description, the heat dissipation device of the present invention based on the semiconductor chip 1 may be referred to as a heat dissipation device for short.

First embodiment

Referring to fig. 1, the heat dissipation device based on semiconductor chip of the present invention includes a semiconductor chip 1 and at least one heat conduction assembly; the heat conducting component comprises a heat conducting plate 2, heat conducting ribs 3 and a flow guiding heat transfer element 5, wherein the heat conducting ribs 3 are vertically arranged on the heat conducting plate 2, the flow guiding heat transfer element 5 penetrates through the heat conducting ribs 3, and a fluid channel 6 is formed on the flow guiding heat transfer element 5;

the first end face of the semiconductor wafer 1 is attached to the heat conducting plate 2, and the second end face of the semiconductor wafer 1 is attached to an external heat dissipation piece 7; a cold fluid passes through the fluid channel 6;

the electric arm of the first end face and the electric arm of the second end face of the semiconductor wafer 1 are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer 1;

or the electric arm on the first end face and the electric arm on the second end face of the semiconductor wafer 1 are respectively connected with an electric load so as to realize the temperature difference power generation between the first end face and the second end face of the semiconductor wafer 1.

The utility model provides a heat abstractor's semiconductor wafer 1's radiating principle as follows:

the semiconductor wafer 1 is composed of a plurality of series galvanic couple stacks and parallel galvanic couple stacks, and has the same basic structural form as the existing semiconductor refrigerating sheet.

In principle, a semiconductor cooling plate is a means of heat transfer. When a thermocouple formed by connecting an N-type semiconductor material and a P-type semiconductor material passes through a current, heat transfer can be generated between the two ends, and the heat can be transferred from one end face to the other end face, so that temperature difference is generated to form a cold end and a hot end.

When the temperature of the heat dissipation member 7 is higher than that of the cold fluid, the second end surface and the first end surface of the semiconductor wafer 1 are the hot end and the cold end formed by the temperature difference.

The utility model provides a heat abstractor's semiconductor wafer 1's thermoelectric generation's principle as follows:

seebeck effect

One eighty-two-year german seebeck found that when two different conductors were connected, if the two connection points maintained different temperature differences, a thermoelectromotive force was generated in the conductors, ES ═ S △ T where ES is the thermoelectromotive force, S is the thermoelectromotive force rate (seebeck coefficient), and △ T is the temperature difference between the connection points.

When the electrical arm on the first end face and the electrical arm on the second end face of one semiconductor wafer 1 are respectively connected with an electrical load, based on the seebeck effect principle, an electrical potential is generated between the first end face and the second end face of the semiconductor wafer 1, and a voltage and a current are provided for the electrical load.

In this embodiment, the heat dissipation member 7 may be a chip or a photovoltaic panel.

In this embodiment, the first end surface of one semiconductor wafer 1 is attached to one heat conducting plate 2; or, the first end faces of a plurality of semiconductor wafers 1 are attached to one heat conducting plate 2; the second end face of one semiconductor wafer 1 is attached to one heat dissipation member 7; alternatively, the first end surfaces of the plurality of semiconductor chips 1 are attached to one of the heat dissipation members 7.

As an optional mode of this embodiment, a first end surface of one semiconductor wafer 1 is attached to one heat conduction plate 2, and a second end surface of one semiconductor wafer 1 is attached to one heat dissipation member 7.

The number of the diversion heat transfer elements 5 is at least one. The flow guide heat transfer element 5 is a flow guide column or a flow guide pipe;

the diversion column is a single-hole diversion column or a multi-hole diversion column; the honeycomb duct is a plurality of in quantity.

As an alternative manner of this embodiment, the number of the flow-guiding heat transfer elements 5 is one, and the flow-guiding heat transfer elements 5 are flow-guiding columns; the flow guide column is a single-hole flow guide column.

In one group of the heat dissipation devices, the first end face of the semiconductor wafer 1 is attached to the heat conduction plate 2, and the second end face of the semiconductor wafer 1 is attached to the external heat dissipation member 7;

the fluid channels 6 of the heat conducting components are communicated in sequence to form a serial connection mode;

or the same ends of the fluid channels 6 of the heat conducting components are communicated to form a parallel connection mode;

or, the fluid channel 6 of each heat conducting component is divided into two small groups, in one small group of heat conducting components, the fluid channels 6 are communicated in sequence; in the other group of heat conducting assemblies, the same ends of the fluid channels 6 of all the heat conducting assemblies are communicated, and the fluid channels 6 in the two groups of heat conducting assemblies are communicated to form a series-parallel connection mode;

when the electric arm of the first end face and the electric arm of the second end face of the semiconductor wafer 1 are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer 1;

the semiconductor wafer 1 is used for forming large temperature difference heat exchange by the advantage of low temperature of the cold side of direct current, heat flows from a high-temperature area to a low-temperature area quickly, current carriers are used for transferring the heat to a heat conduction plate 2 on the hot side of the semiconductor wafer, the heat is transferred to a heat conduction pipe or a heat conduction column through a heat conduction rib 3, then the heat is absorbed in the heat conduction pipe in a circulating mode through fluid, and the heat is taken into a cooling device or a semiconductor temperature difference power generation device through the fluid to realize temperature difference power generation.

Second embodiment

Referring to fig. 2, a second embodiment of the present invention provides another heat dissipation device based on a semiconductor wafer according to a first embodiment of the present invention, wherein the heat dissipation device comprises a plurality of flow-guiding heat transfer members 4, and the flow-guiding heat transfer members 4 are flow-guiding pipes.

Third embodiment

Referring to fig. 3, a third embodiment of the present invention provides another heat dissipation apparatus based on a semiconductor wafer according to a first embodiment of the present invention, which is different in that the number of the flow-guiding heat-transfer members 5 is one, and the flow-guiding heat-transfer members 5 are flow-guiding columns; the flow guide column is a porous flow guide column.

Fourth embodiment

Referring to fig. 4, a fourth embodiment of the present invention provides another heat dissipation apparatus based on a semiconductor wafer according to a first embodiment of the present invention, wherein the number of the flow guiding heat transfer members 9 is one, and the flow guiding heat transfer members 9 are flow guiding columns; the flow guide column is a porous flow guide column.

The first end faces of the plurality of semiconductor wafers 8 are attached to one of the heat conductive plates 10.

Fifth embodiment

Referring to fig. 5, a fifth embodiment of the present invention provides another heat dissipation apparatus based on a semiconductor wafer according to the first embodiment of the present invention, which is different in that in one heat conduction assembly, the number of the flow guiding heat transfer members 5 is one, and the flow guiding heat transfer members 5 are flow guiding columns; the flow guide column is a porous flow guide column.

The first end face of one semiconductor wafer 1 is attached with a plurality of heat conducting plates 2, and the second end face of one semiconductor wafer 1 is attached with one heat dissipation member 14.

In this embodiment, the heat dissipation member 14 may be a photovoltaic panel assembly. The second end face of the semiconductor wafer 1 is attached to the rear face 13 of one of the photovoltaic panels.

The cooling liquid can be cooling water which passes through the fluid channel 6 of the porous flow guide column, and the cooling water can bring the heat transferred by the semiconductor chip 1 to the cooling tower for cooling; or the thermoelectric generator is carried to a semiconductor thermoelectric generator to realize thermoelectric generation.

Sixth embodiment

Referring to fig. 6, the heat dissipation device based on the semiconductor chip 1 of the present invention includes a semiconductor chip 8 and at least one heat conduction assembly; the heat conducting component comprises a heat conducting plate 2, a heat conducting rib 3 and a flow guiding heat transfer element 4, the heat conducting rib 3 is vertically arranged on the heat conducting plate 2, the flow guiding heat transfer element 4 penetrates through the heat conducting rib 3, and a fluid channel 6 is formed on the flow guiding heat transfer element 4;

the semiconductor wafer 8 is clamped between the two heat-conducting plates 2; two flows which have temperature difference and flow direction reversed respectively pass through the fluid channels 12 of the two heat-conducting plates 10;

the electric arm of the first end face and the electric arm of the second end face of the semiconductor wafer 8 are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer 1;

or the electric arm on the first end face and the electric arm on the second end face of the semiconductor wafer 8 are respectively connected with an electric load so as to realize the temperature difference power generation between the first end face and the second end face of the semiconductor wafer 1.

When the semiconductor wafer 8 is sandwiched between the two heat-conducting plates 10 in the other set of the heat-dissipating devices;

the fluid channels 12 located on the same side of the semiconductor wafer 8 are in turn connected to form a serial connection;

alternatively, the same ends of the fluid channels 12 of the heat conducting components are communicated to form a parallel connection mode;

alternatively, the fluid channels 12 of each heat conducting assembly are divided into two sub-groups, and in one sub-group of heat conducting assemblies, the fluid channels 12 on the same side in the semiconductor wafer 8 are sequentially communicated; in the other subgroup of heat-conducting assemblies, the same ends of the fluid channels 12 of the heat-conducting assemblies are communicated; the fluid channels 12 in the two small groups of heat conducting assemblies are communicated to form a series-parallel connection mode.

The utility model provides a heat abstractor's semiconductor wafer 8's radiating principle as follows:

the semiconductor wafer 8 is composed of a plurality of series galvanic couple stacks and parallel galvanic couple stacks, which have the same basic structural form as the existing semiconductor refrigerating sheet.

When the temperature of the fluid passing through one fluid channel 12 is higher than that of the fluid passing through the other fluid channel 12, the first end surface and the second end surface of the semiconductor wafer 1 are the hot end and the cold end where the temperature difference is formed.

The first and second end faces of the semiconductor wafer 8, i.e. the cold and hot end faces where the temperature difference is formed, are the first and second end faces when the temperature of the fluid passing through one fluid channel 12 is lower than the temperature of the fluid passing through the other fluid channel 12.

For convenience of description, the fluid with higher temperature in the two fluids is not defined as the hot fluid; the fluid with the lower temperature is cold fluid.

The utility model provides a heat transfer device's semiconductor wafer 8's thermoelectric generation's principle as follows:

seebeck effect

When the electrical arm on the first end face and the electrical arm on the second end face of one semiconductor wafer 8 are respectively connected with an electrical load, based on the seebeck effect principle, an electrical potential is generated between the first end and the second end of the semiconductor wafer 8, and a voltage and a current are provided for the electrical load.

The electric arm on the first end face and the electric arm on the second end face of the semiconductor wafer 8 are respectively connected with an electric appliance load so as to realize the temperature difference power generation between the first end face and the second end face of the semiconductor wafer 8;

the semiconductor chip 8 is sandwiched between the cold and hot heat transfer plates; the fluid channel 12 of the porous diversion column at the hot side circulates hot fluid;

the fluid channel 12 of the cold-side porous diversion column is communicated with cold fluid, and the semiconductor wafer 8 generates direct current by means of the temperature difference of the fluids on the two sides.

Seventh embodiment

Referring to fig. 7, a heat dissipation device based on a semiconductor chip 1 according to a first embodiment of the present invention is a heat dissipation device, which is different from the first embodiment in that:

when the first end face of the semiconductor wafer 1 in the group of the heat dissipation devices 19 is attached to the heat conduction plate 2, the second end face of the semiconductor wafer 1 is attached to the external heat dissipation member 7, and the electric arm of the first end face and the electric arm of the second end face of the semiconductor wafer 1 are both connected with the direct current power supply device, so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer 1;

the heat dissipation device further comprises a circulating pump 21 and a cooling tower 22, wherein the circulating pump 21 is used for introducing the cooling liquid in the cooling tower 22 into the fluid channel 6 and then returning the cooling liquid to the cooling tower 22;

the cooling tower 22 is used to reduce the temperature of the cooling fluid entering the tower.

In this embodiment, the same ends of the fluid channels 6 of the heat conducting elements in a group of heat dissipation devices 19 are connected to form a parallel connection.

The flow diagram of this embodiment is a parallel structure, and of course, a series connection or a series-parallel connection combination may also be adopted, and generally, the parallel structure is mainly used.

In this embodiment, the heat dissipation member 7 may be a chip.

The heat of the computer server chip in the computer room is cooled through the semiconductor refrigerating sheet, the heat generated by the semiconductor wafer 1 is transferred to the fluid in the guide pipe through the heat conducting plate 2 and the heat conducting ribs 3, and the fluid is heated and then carries the heat to the cooling tower 22 through the circulating pump 21 to exchange the heat with the air, so that the purpose of cooling the chip is achieved.

Eighth embodiment

Referring to fig. 8, based on the heat dissipation device based on the semiconductor chip 1 according to the sixth and seventh embodiments of the present invention, an eighth embodiment of the present invention provides another heat dissipation device, which is different from the first embodiment in that:

when the semiconductor wafer 1 in the other group of the heat dissipation devices is clamped between the two heat conduction plates 2, and the electric arm on the first end face and the electric arm on the second end face of the semiconductor wafer 1 are respectively connected with an electric load so as to realize thermoelectric power generation between the first end face and the second end face of the semiconductor wafer 1;

the circulating pump 21 is used for introducing the cooling liquid in the cooling tower 22 into the fluid channel 6 in one group of the heat dissipation devices, then delivering the cooling liquid into the fluid channel 6 on one side of the semiconductor wafer 1 in the other group of the heat dissipation devices, and finally returning the cooling liquid to the cooling tower 22;

the cooling tower 22 is used for reducing the temperature of cooling liquid entering the tower;

the circulation pump 21 is also used for sending the cooled cooling liquid to the fluid channel 6 on the other side of the semiconductor wafer 1 in the other group of heat dissipation devices, and then sending the cooling liquid back to the cooling tower 22.

In this embodiment, the same ends of the fluid channels 6 of the heat conducting elements in the other set of heat dissipation devices are connected to form a parallel connection.

The embodiment is directed to cooling of the chip;

the thermoelectric power generation can be realized by utilizing the heat generated by the chip, namely, the purpose of heat dissipation and energy saving of the chip can be realized, and the purpose of thermoelectric power generation can also be realized, so that the thermoelectric power generation device has multiple purposes.

If the fluid channel 6 of the flow guide pipe or the flow guide column is a micro-channel, we need to consider that the cooling tower 22 adopts closed circulation, so as to prevent dust in the air from entering a circulating cooling water system to block the micro-channel and influence the heat exchange effect of the system.

This embodiment is implemented as such;

when the heat generated by the chip is transferred to the heat conducting plate 2 and the heat conducting ribs 3 by the semiconductor refrigerating wafer, the heat is conducted to the fluid (cooling liquid) in the flow guide pipe through the heat conducting ribs 3, the cooling liquid enters each hot side heat conducting pipe in the semiconductor temperature difference power generation device after the temperature of the heat is raised, and then part of the heat is converted into the potential energy of the electrons of the semiconductor wafer 1.

The electric arm leads of each semiconductor wafer 1 can be connected in parallel or in series, the electric potential can be converted into direct current, electric energy is provided for loads, and the electric energy can directly drive the semiconductor refrigerating piece to work, so that the electric energy consumed for cooling the chip is saved.

Finally, the fluid carrying heat is driven into the cooling tower 16 by the circulating pump 17 after partial heat is released in the semiconductor thermoelectric generation wafer to give the heat to the air, and the cooling water comes out of the cooling tower 16 and has the temperature lower than that of the ambient air, and then enters the heat conduction pipe of the semiconductor refrigeration wafer and the cold side heat conduction pipe of the semiconductor thermoelectric generation device respectively, so that the circulation process of the cooling liquid is repeatedly realized.

The connection mode of the heat conduction pipes is not limited, as long as the purpose of mutual communication of the heat conduction pipes can be achieved and the heat conduction pipes are suitable for the environmental installation conditions, the heat conduction pipes can be connected by various hoses in a tightening manner or in a threaded manner, and the connection mode of the heat conduction pipes is not described in detail herein.

The utility model discloses a have as follows showing the advantage:

1. the semiconductor refrigeration wafer is directly used for heat exchange of the high-strength large temperature difference of the approximate mass point of the chip, the cold side of the high-efficiency semiconductor refrigeration wafer can reach below 60 ℃ below zero, the hot side can even reach above 100 ℃, the heat of the chip or the photovoltaic plate is transferred to the hot side of the semiconductor refrigeration wafer by the semiconductor refrigeration wafer, and then the heat is transferred out through the heat conduction plate 2, so that the first bottleneck that the heat exchange area is limited is broken through, and the heat is separated from the chip to enable the chip to work stably.

2. Liquid water is adopted to carry out heat exchange quickly in a fluid channel 6 of a heat transfer device at the hot side of a semiconductor wafer 1, firstly, heat at the hot side of the semiconductor refrigeration wafer is transferred into a channel suitable for liquid heat exchange through a good heat conduction material, and the heat exchange area is enlarged by 5-20 times, because the enlargement of the heat exchange area is not practical more, then, water is utilized to obtain heat in the heat exchange channel, the heat exchange capacity of the water is thought to be 66 times of that of air, the heat exchange device has the remarkable advantages that the heat exchange area is stronger than that of the heat pipe for realizing secondary heat transfer, because the water can enhance the circulation multiplying power through a circulating pump 17, a heat pipe working medium is limited by heat exchange fins and cannot be further expanded, the heat exchange capacity of the air is much smaller than that of the water, the water can realize long-distance heat transfer, the expression of the high-intensity heat exchange is realized, and a large, this is also due to the fact that the heat exchange area of the semiconductor wafer 1 is too small, and the difference from the prior art is that the large circulation rate can be used to compensate the limitation of insufficient heat exchange area.

After the two high-strength heat exchange modes are adopted, two bottlenecks of the heat exchange are solved, after the liquid heat exchange brings the convenience of long-distance heat transmission, the heat exchange between the large area and air can be completely and easily realized, the cooling water is very close to the temperature of wet balls, the cooling water can be cooled by only increasing the heat dissipation area of the cooling tower 22 and the cooling air volume if the cooling water is willing to increase, and the temperature of the cooling water can be lower than the temperature of the ambient air.

The cooling process is optimized, the bottleneck in the heat exchange process can be effectively solved, the working stability of the chip is realized on the basis of not reducing the running reliability of the chip, and the chip and the semiconductor refrigerating wafer can be completely close to the air temperature or isolated to prevent the generation of condensed water.

The high efficiency and the low-cost operation of chip cooling can be realized, photovoltaic board photoelectric conversion efficiency also can be improved simultaneously to photovoltaic board and chip cooling equally, can also utilize the heat at the photovoltaic board back and the produced heat of chip to carry out thermoelectric generation, be used for the LED lamp equally can improve its luminous efficiency, can also prolong its life.

The utility model discloses a except having very strong heat-sinking capability, can also satisfy the demand of chip operational reliability, sexual valence relative altitude, the high three aspect of integrated level.

The ultra-strength heat exchange is realized by increasing the temperature difference or the circulation volume of a heat exchange fluid, because the high-temperature heat of particles is difficult to remove, the heat exchange area cannot be increased, the direct heat exchange force of air is too weak, the heat can be transferred out only in a plurality of heat exchange stages, the large temperature difference is adopted firstly, then the heat exchange area is moderately enlarged, and then water which is 66 times stronger than the heat exchange capacity of air is adopted, so that the heat of a chip is taken out, and the heat is treated after the heat enters the cooling tower 16.

The utility model discloses a realize high-efficient radiating like this, from the outer thermal resistance of outside heat dissipation device and from cooling method, material structure and the optimal design of system level.

The high-efficiency semiconductor refrigeration wafer is attached to the back of a chip or a photovoltaic panel, absorbs heat through a semiconductor current carrier, and transfers the heat to the hot side, which is equivalent to a molecular heat pump (or an electronic heat pump);

pass through again the utility model discloses a heat-conducting plate 2 and heat conduction rib 3 that set up are heat conduction to fluid passage 6 in, this fluid passage 6 heat transfer area has enlarged more than 5 times than chip surface area, and 66 times's water that matches again than air heat transfer energy is strong acquires the heat in the passageway, and this is direct at least than having strengthened 400 ~ 2000 times heat transfer ability with air heat transfer, has just so broken through the restriction of heat transfer bottleneck.

The heat dissipation device provided by the utility model can rapidly absorb the heat of the chip and the photovoltaic panel and take away the heat generated by the chip in time; the semiconductor thermoelectric generation wafer is provided as a heat source, the purpose of semiconductor thermoelectric generation is realized by utilizing the heat, the effect of one action of two can be obtained, the semiconductor thermoelectric generation wafer can be widely applied to many fields such as large data centers, telecommunication rooms, photovoltaic power generation fields and the like, and the semiconductor thermoelectric generation wafer can realize thermoelectric generation while radiating heat for photovoltaic panels, LED lamps and chips, and can ensure multiple purposes of efficient, stable and reliable operation of the photovoltaic panels, the LED lamps and the chips.

The utility model also provides a photovoltaic board power station 15.

The photovoltaic panel power station 15 comprises a plurality of photovoltaic panel assemblies, a circulating pump 17, a cooling tower 16 and the heat dissipation device;

the first end face of the semiconductor wafer 1 in the group of heat dissipation devices is attached to the heat conduction plate 2, the second end face of the semiconductor wafer 1 is attached to the external heat dissipation member 7, and the electric arm of the first end face and the electric arm of the second end face of the semiconductor wafer 1 are both connected with the direct current power supply device, so that heat transfer between the first end face and the second end face of the semiconductor wafer 1 is realized; wherein the heat sink 7 is the photovoltaic panel assembly;

the semiconductor wafer 1 in the other group of the heat dissipation devices 18 is clamped between the two heat conduction plates 2, and the electric arm on the first end face and the electric arm on the second end face of the semiconductor wafer 1 are respectively connected with an electric load, so that thermoelectric power generation between the first end face and the second end face of the semiconductor wafer 1 is realized;

the circulating pump 17 is used for introducing the cooling liquid in the cooling tower 16 into the fluid channel 6 in one group of the heat dissipation devices, then delivering the cooling liquid into the fluid channel 6 on one side of the semiconductor wafer 1 in the other group of the heat dissipation devices, and finally returning the cooling liquid to the cooling tower 16;

the cooling tower 16 is used for reducing the temperature of cooling liquid entering the tower;

the circulating pump 17 is also used for sending the cooled cooling liquid to the fluid channel 6 on the other side of the semiconductor wafer 1 in another group of the heat dissipation devices and then sending the cooling liquid back to the cooling tower 16.

The heat of the photovoltaic panel is brought into another group of heat dissipation devices through a circulating pump 17 of the photovoltaic panel to realize thermoelectric power generation;

then the cooling water enters the cooling tower 16 to exchange heat with the air;

the fluid on the cold fluid side of the other set of heat sinks is cooling water from the cooling tower 16.

The above is only the preferred embodiment of the present invention, not limiting the scope of the present invention, all of which are under the concept of the present invention, the equivalent structure transformation made by the contents of the specification and the drawings is utilized, or the direct/indirect application in other related technical fields is included in the patent protection scope of the present invention.

Claims

1. A heat sink device based on semiconductor chip is characterized in that it comprises a semiconductor chip and at least one heat conducting component; the heat conducting component comprises a heat conducting plate, heat conducting ribs and a flow guiding heat transfer piece, the heat conducting ribs are vertically arranged on the heat conducting plate, the flow guiding heat transfer piece penetrates through the heat conducting ribs, and a fluid channel is formed on the flow guiding heat transfer piece;

the electric arm of the first end face and the electric arm of the second end face of the semiconductor wafer are both connected with a direct current power supply device, so that heat transfer between the first end face and the second end face of the semiconductor wafer is achieved.

2. The semiconductor wafer-based heat dissipation device according to claim 1, wherein when the first end surface of the semiconductor wafer is attached to the heat conductive plate and the second end surface of the semiconductor wafer is attached to an external heat dissipation member;

3. The semiconductor wafer based heat dissipation device of claim 1, wherein the number of the flow-directing heat transfer elements is at least one.

4. The semiconductor wafer based heat dissipation device of claim 3, wherein the flow-guiding heat transfer member is a flow-guiding column or a flow-guiding pipe;

the honeycomb duct is a plurality of in quantity.

5. The semiconductor wafer-based heat dissipation device according to claim 1, wherein when one set of the heat dissipation devices is provided, the first end surface of the semiconductor wafer is attached to the heat conductive plate, and the second end surface of the semiconductor wafer is attached to an external heat dissipation member;

6. The semiconductor wafer-based heat dissipation device according to any one of claims 1 to 5, wherein when the first end surface of the semiconductor wafer in a group of the heat dissipation devices is attached to the heat conduction plate, the second end surface of the semiconductor wafer is attached to an external heat dissipation member, and the electrical arm of the first end surface and the electrical arm of the second end surface of the semiconductor wafer are both connected to a DC power supply device, so as to achieve heat transfer between the first end surface and the second end surface of the semiconductor wafer;

7. The semiconductor wafer-based heat dissipation device of claim 6, wherein when the semiconductor wafer is sandwiched between two heat conduction plates in another set of the heat dissipation devices, and the electric arm of the first end face and the electric arm of the second end face of the semiconductor wafer are respectively connected to an electric load, so as to generate electricity by the temperature difference between the first end face and the second end face of the semiconductor wafer;

8. A photovoltaic panel power plant comprising a plurality of photovoltaic panel assemblies, a circulation pump, a cooling tower, and the semiconductor wafer based heat sink of any one of claims 1-5;