CN210711735U - Multi-piece type rotating plasma enhanced atomic layer deposition film forming device - Google Patents
Multi-piece type rotating plasma enhanced atomic layer deposition film forming device Download PDFInfo
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- CN210711735U CN210711735U CN201921509920.0U CN201921509920U CN210711735U CN 210711735 U CN210711735 U CN 210711735U CN 201921509920 U CN201921509920 U CN 201921509920U CN 210711735 U CN210711735 U CN 210711735U
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Abstract
The utility model relates to a film preparation technical field especially relates to a rotatory plasma of multi-sheet formula reinforcing atomic layer deposition film forming device, its characterized in that: the device comprises a vacuum coating chamber, a radio frequency plasma surface source and a multilayer substrate support, wherein the vacuum coating chamber is communicated with the radio frequency plasma surface source, the multilayer substrate support is arranged in the vacuum coating chamber and can rotate in the vacuum coating chamber, the multilayer substrate support is provided with at least two substrate loading positions which are overlapped along the height direction, and the substrate loading positions are arranged perpendicular to the radio frequency plasma surface source. The utility model has the advantages that: the radio frequency plasma surface source is combined with the multilayer rotating frame chip mounting system, so that the function of simultaneously forming a plurality of films can be realized, the substrate loading capacity of plasma enhanced atomic layer deposition is greatly improved, and the production efficiency is improved; the addition of the surface plasma source can effectively reduce the temperature window during the atomic layer deposition film forming; has the advantages of compact structure, small occupied area and low operation cost.
Description
Technical Field
The utility model relates to a film preparation technical field especially relates to a rotatory plasma reinforcing atomic layer deposition film forming device of multi-disc formula.
Background
Improving the film-forming yield of the plasma enhanced atomic layer deposition equipment is a goal pursued in the field of atomic layer deposition equipment film forming. Loading of a coated substrate in equipment and control of an atomic layer deposition film-forming temperature window are important indexes influencing plasma enhanced atomic layer deposition productivity.
For plasma enhanced atomic layer deposition equipment, a structure of a substrate positive to plasma is mostly adopted at present, namely, the plasma and the substrate are in a parallel arrangement state. The substrates cannot be stacked, because the substrate facing the plasma blocks most of the particles generated by the plasma. This configuration results in a very small loading area of the overall substrate. The production efficiency is very low, and the production of large-batch substrates cannot be carried out.
Disclosure of Invention
The utility model aims at providing a rotatory plasma reinforcing atomic layer deposition film forming device of multi-disc formula according to above-mentioned prior art not enough, through setting up radio frequency plasma face source and rather than the combination of the perpendicular multilayer revolving rack dress piece system of arranging mutually, can realize that the multi-disc substrate becomes the membrane simultaneously when guaranteeing the filming quality, improved plasma reinforcing atomic layer deposition's substrate load capacity greatly, improve production efficiency.
The utility model discloses the purpose is realized accomplishing by following technical scheme:
a multi-piece type rotating plasma enhanced atomic layer deposition film forming device is characterized in that: the device comprises a vacuum coating chamber, a radio frequency plasma surface source and a multilayer substrate support, wherein the vacuum coating chamber is communicated with the radio frequency plasma surface source, the multilayer substrate support is arranged in the vacuum coating chamber and can rotate in the vacuum coating chamber, the multilayer substrate support is provided with at least two substrate loading positions which are overlapped along the height direction, and the substrate loading positions are arranged perpendicular to the radio frequency plasma surface source.
The vacuum coating chamber comprises an outer vacuum chamber and a vacuum reaction chamber, and the vacuum reaction chamber is positioned in the outer vacuum chamber and communicated with the radio frequency plasma surface source; the multi-layer substrate support is positioned in the vacuum reaction chamber.
The vacuum reaction chamber and the vacuum outer chamber can be relatively lifted, so that the multi-layer substrate support can be relatively lifted.
The radio frequency plasma area source comprises a rectangular radio frequency plasma vacuum chamber and a rectangular radio frequency plasma coil, wherein the rectangular radio frequency plasma coil is arranged on the side wall of the rectangular radio frequency plasma vacuum chamber; the rectangular radio frequency plasma vacuum chamber is connected with the vacuum outer chamber through a vacuum sealing ring.
And a plasma grid mesh is arranged between the rectangular radio frequency plasma vacuum chamber and the vacuum reaction chamber, and holes are arranged on the plasma grid mesh.
The plasma grid mesh is hermetically connected with the vacuum reaction chamber through metal contact.
And a multi-rotating-frame system consisting of a plurality of multi-layer substrate supports is symmetrically arranged in the vacuum coating chamber, the multi-rotating-frame system revolves in the vacuum coating chamber, and each multi-layer substrate support independently rotates at the same time.
The multi-layer substrate support can be lifted in the vacuum coating chamber.
At least two substrate loading positions are arranged in a horizontal plane at the same height of the layered substrate support.
The utility model has the advantages that: the radio frequency plasma surface source is combined with the multilayer rotating frame chip mounting system, so that the function of simultaneously forming a plurality of films can be realized, the substrate loading capacity of plasma enhanced atomic layer deposition is greatly improved, and the production efficiency is improved; the addition of the surface type radio frequency plasma can effectively reduce the temperature window when the atomic layer is deposited and formed; has the advantages of compact structure, small occupied area and low operation cost.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of a multi-layered substrate holder according to the present invention;
FIG. 3 is a top view of a multi-layered substrate support of the present invention;
FIG. 4 is a schematic view of a multi-layered substrate support according to the present invention.
Detailed Description
The features of the present invention and other related features are described in further detail below by way of example in conjunction with the accompanying drawings to facilitate understanding by those skilled in the art:
as shown in fig. 1-4, the labels 1-10 are respectively shown as: the device comprises a vacuum outer chamber 1, a vacuum reaction chamber 2, a rectangular radio frequency plasma vacuum chamber 3, a rectangular radio frequency plasma coil 4, a plasma grid 5, a multilayer substrate support 6, a substrate loading plate 7, a connecting column 8, a rotating shaft 9 and a multi-rotating-frame system 10.
The first embodiment is as follows: the multi-piece rotary plasma enhanced atomic layer deposition film forming device comprises a vacuum film coating chamber and a radio frequency plasma surface source, wherein the vacuum film coating chamber is used as a film coating space, and the radio frequency plasma surface source is used for forming a film on a substrate positioned in the vacuum film coating chamber during a film forming process.
As shown in fig. 1, the vacuum coating chamber includes an outer vacuum chamber 1 and a reaction vacuum chamber 2, wherein the reaction vacuum chamber 2 is located inside the outer vacuum chamber 1. The radio frequency plasma surface source comprises a rectangular radio frequency plasma vacuum chamber 3 and a rectangular radio frequency plasma coil 4, wherein the rectangular radio frequency plasma vacuum chamber 3 is connected with the vacuum outer chamber 1 through a vacuum sealing ring and communicated with the vacuum reaction chamber 2; the rectangular rf plasma coil 4 is disposed on the sidewall of the rectangular rf plasma vacuum chamber 3 and communicates with the interior of the rectangular rf plasma vacuum chamber 3.
As shown in FIG. 1, a plasma grid 5 is arranged between a rectangular radio frequency plasma vacuum chamber 3 and a vacuum reaction chamber 2, and the plasma grid 5 and the vacuum reaction chamber 2 are directly connected in a sealing mode through metal contact. Holes are distributed on the plasma grid 5, and particles diffuse (are brought by the introduced airflow) through the holes and enter the vacuum reaction chamber 2 in the radio frequency plasma surface source discharge process.
As shown in fig. 1, a multi-layered substrate holder 6 is provided inside the vacuum reaction chamber 2, and the multi-layered substrate holder 6 serves as a substrate loading part. As shown in fig. 2, the multi-layered rack 6 includes a plurality of substrate loading plates 7 arranged at intervals in the height direction, each substrate loading plate 7 is used as a substrate loading position, the substrate can be fixedly mounted on each substrate loading plate 7, and the plurality of substrate loading plates 7 are connected and fixed by connecting posts 8 to form an integral rotating rack, so that the loading capacity of the substrate in a primary film forming process can be greatly improved, and the production efficiency can be improved. As shown in fig. 3, a rotation shaft 9 is further provided at the center of the multi-layered substrate holder 6, and in the case of externally connecting the rotation shaft, the multi-layered substrate holder 6 can be rotated within the vacuum reaction chamber 2 by the rotation shaft 9 to improve the uniformity of film formation.
The multilayer substrate support 6 is arranged in a state of being vertical to the radio frequency plasma surface source and the plasma grid mesh. Therefore, when the radio frequency plasma surface source discharges, in the process that particles diffuse into the vacuum reaction chamber 2 through the holes on the plasma grid 5, the empty space part between two adjacent substrate loading plates 7 of the multilayer substrate support 6 is filled with the particles, so that the substrate film forming is realized; and the introduction of the particles reduces the film forming temperature window of the atomic layer deposition so as to realize the purpose of low-temperature atomic layer deposition film forming.
Example two: as shown in fig. 4, the difference between the first embodiment and the second embodiment is: the multi-rotating-frame system 10 is arranged in the vacuum reaction chamber 2, the multi-rotating-frame system 10 comprises four multi-layer substrate supports 6, the four multi-layer substrate supports 6 are mutually independent and symmetrically arranged on the multi-rotating-frame system 10, each multi-layer substrate support 6 can independently rotate on the multi-rotating-frame system 10, and meanwhile, the multi-rotating-frame system 10 can also revolve in the vacuum reaction chamber 2, so that the film forming uniformity is improved. Compared with the first embodiment, the present embodiment can provide a higher substrate loading capacity while ensuring the film formation quality.
The above embodiments are embodied as follows: more than one substrate is loaded on each substrate loading plate 7, and the substrates can be uniformly arranged, thereby further improving the loading capacity of the substrates.
The vacuum outer chamber 1 and the vacuum reaction chamber 2 can generate relative lifting, namely the vacuum outer chamber 1 and the vacuum reaction chamber 2 are fixed in the film forming process, so that the sealing property is ensured; after the primary film forming process is finished, the vacuum outer chamber 1 and the vacuum reaction chamber 2 can be relatively lifted, so that the multilayer substrate support 6 is taken out, and a new batch of substrates to be formed is conveniently installed. Specifically, for example, the vacuum reaction chamber 2 may be lowered as compared to the vacuum outer chamber 1, so that the multi-layered substrate holder 6 located inside the vacuum outer chamber is lowered, the multi-layered substrate holder 6 and the substrate are taken out, a new batch of multi-layered substrate holders and substrates is replaced, and the vacuum reaction chamber 2 is raised to perform the next film formation process. In addition, the substrate carried by the multi-layered substrate holder 6 may be replaced without taking it out.
The holes of the plasma grid 5 can be selected to be 2-5mm and are uniformly arranged, so that the particles diffused into the vacuum reaction chamber 2 through the plasma grid 5 can be uniformly filled in the position of the neutral part between two adjacent substrate loading plates 7, and the problem of non-uniform film formation of the substrates on the same multilayer substrate support 6 is avoided.
The main material of the vacuum outer chamber 1 is stainless steel; the main material of the vacuum reaction chamber 2 is Ti. The vacuum coating chamber can be vertical (or horizontal) and has the advantages of compact structure and small floor area. The gas-withdrawal side may be arranged at the other, opposite side of the multi-layer substrate holder 6.
In the implementation process, the supporting facilities comprise a vacuum pumping system, equipment such as an electric power, gas and cooling water supply system, an electric and software control system and the like.
Although the conception and the embodiments of the present invention have been described in detail with reference to the drawings, those skilled in the art will recognize that various changes and modifications can be made therein without departing from the scope of the appended claims.
Claims (9)
1. A multi-piece type rotating plasma enhanced atomic layer deposition film forming device is characterized in that: the device comprises a vacuum coating chamber, a radio frequency plasma surface source and a multilayer substrate support, wherein the vacuum coating chamber is communicated with the radio frequency plasma surface source, the multilayer substrate support is arranged in the vacuum coating chamber and can rotate in the vacuum coating chamber, the multilayer substrate support is provided with at least two substrate loading positions which are overlapped along the height direction, and the substrate loading positions are arranged perpendicular to the radio frequency plasma surface source.
2. The apparatus according to claim 1, wherein the apparatus comprises: the vacuum coating chamber comprises an outer vacuum chamber and a vacuum reaction chamber, and the vacuum reaction chamber is positioned in the outer vacuum chamber and communicated with the radio frequency plasma surface source; the multi-layer substrate support is positioned in the vacuum reaction chamber.
3. The apparatus according to claim 2, wherein the apparatus comprises: the vacuum reaction chamber and the vacuum outer chamber can be relatively lifted, so that the multi-layer substrate support can be relatively lifted.
4. The apparatus according to claim 2, wherein the apparatus comprises: the radio frequency plasma area source comprises a rectangular radio frequency plasma vacuum chamber and a rectangular radio frequency plasma coil, wherein the rectangular radio frequency plasma coil is arranged on the side wall of the rectangular radio frequency plasma vacuum chamber; the rectangular radio frequency plasma vacuum chamber is connected with the vacuum outer chamber through a vacuum sealing ring.
5. The apparatus according to claim 4, wherein the apparatus comprises: and a plasma grid mesh is arranged between the rectangular radio frequency plasma vacuum chamber and the vacuum reaction chamber, and holes are arranged on the plasma grid mesh.
6. The apparatus according to claim 5, wherein: the plasma grid mesh is hermetically connected with the vacuum reaction chamber through metal contact.
7. The apparatus according to claim 1, wherein the apparatus comprises: and a multi-rotating-frame system consisting of a plurality of multi-layer substrate supports is symmetrically arranged in the vacuum coating chamber, the multi-rotating-frame system revolves in the vacuum coating chamber, and each multi-layer substrate support independently rotates at the same time.
8. The multi-sheet rotating plasma enhanced atomic layer deposition film forming apparatus according to claim 1 or 7, wherein: the multi-layer substrate support can be lifted in the vacuum coating chamber.
9. The apparatus according to claim 1, wherein the apparatus comprises: at least two substrate loading positions are arranged in a horizontal plane at the same height of the layered substrate support.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921509920.0U CN210711735U (en) | 2019-09-11 | 2019-09-11 | Multi-piece type rotating plasma enhanced atomic layer deposition film forming device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921509920.0U CN210711735U (en) | 2019-09-11 | 2019-09-11 | Multi-piece type rotating plasma enhanced atomic layer deposition film forming device |
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| CN210711735U true CN210711735U (en) | 2020-06-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110408912A (en) * | 2019-09-11 | 2019-11-05 | 光驰科技(上海)有限公司 | A kind of multiple-piece rotating plasma enhancing atomic layer deposition film formation device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110408912A (en) * | 2019-09-11 | 2019-11-05 | 光驰科技(上海)有限公司 | A kind of multiple-piece rotating plasma enhancing atomic layer deposition film formation device |
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