CN210657121U - High-temperature-resistant dual-purpose crystal control instrument - Google Patents
High-temperature-resistant dual-purpose crystal control instrument Download PDFInfo
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- CN210657121U CN210657121U CN201921033917.6U CN201921033917U CN210657121U CN 210657121 U CN210657121 U CN 210657121U CN 201921033917 U CN201921033917 U CN 201921033917U CN 210657121 U CN210657121 U CN 210657121U
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- carrying platform
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Abstract
The utility model discloses a high temperature resistant dual purpose crystal control appearance, include in the vacuum chamber with the quartz plate microscope carrier that substrate holder links to each other, arrange the radio frequency connection terminal that is connected with the quartz plate microscope carrier in the vacuum chamber in and arrange the outdoor brilliant accuse host computer of vacuum chamber in, the quartz plate microscope carrier includes relative microscope carrier and download platform, is used for placing a slice quartz wafer respectively, microscope carrier wherein one side just exposes the coating film direction with appropriate area, download platform quartz wafer arranges the opposite direction of coating film direction in, and only exposes in the outside through a small amount of air vents, makes it can not be by the deposit upper film when the coating film, the microscope carrier with good heat conduction down between the microscope carrier. The device can be applied in a high-temperature coating environment, a water cooling device is not needed, on one hand, coating shadows are eliminated, the air leakage and water leakage probability is reduced, on the other hand, the design and the manufacture of the wafer carrying platform and the radio frequency wiring base are convenient, the structure is small and exquisite, the manufacturing cost is low, and meanwhile, the crystal control instrument can measure the thickness and the temperature of the film in real time during coating.
Description
Technical Field
The utility model relates to a high temperature resistant dual-purpose crystal control instrument belongs to vacuum coating technical field.
Background
At present, a crystal control instrument in the field of vacuum coating is widely applied to film thickness measurement, and an uploading platform of a conventional crystal control instrument is large and needs to embed a cooling water pipe, so that the defects of inconvenient installation, easy formation of coating shadow on a substrate, easy air leakage and dew leakage when the crystal control instrument is not installed, high manufacturing cost and the like exist. In addition, despite the existence of water cooling, the film thickness measurement accuracy of the crystal control instrument is greatly influenced in a high-temperature coating environment.
Disclosure of Invention
The utility model aims to solve the technical problem that a high temperature resistant dual-purpose crystal control instrument is provided, which can be used for measuring at high temperature, measuring film thickness and temperature simultaneously, and has small structure and convenient use.
In order to solve the technical problem, the utility model discloses a technical scheme does:
a high-temperature-resistant dual-purpose crystal control instrument comprises a quartz plate carrying platform, a radio-frequency wire holder and a crystal control host, wherein the quartz plate carrying platform is connected with a substrate support in a vacuum chamber, the radio-frequency wire holder is arranged in the vacuum chamber and connected with the quartz plate carrying platform, the crystal control host is arranged outside the vacuum chamber, the quartz plate carrying platform comprises an upper carrying platform and a lower carrying platform which are opposite and respectively used for placing a quartz wafer, one surface of the quartz wafer of the upper carrying platform is exposed to the coating direction in a right-facing mode with a proper area, the quartz wafer of the lower carrying platform is arranged in the opposite direction of the coating direction and is exposed to the outside only through a small number of vent holes, so that an upper film cannot be.
Further, the quartz plate carrying platform comprises an upper pressing ring, a lower pressing cover, a middle ring body, an elastic sheet A, an elastic sheet B, a fixing screw A, a fixing screw B, an electrode A, an electrode B, an insulating ring A, an insulating ring B and an insulating I-shaped support;
the upper pressure ring and the lower pressure cover are respectively in threaded connection with the middle ring body to form the quartz piece carrying platform main body, the insulating I-shaped support is positioned in the middle of the main body and divides the upper pressure ring and the lower pressure ring into the upper carrying platform and the lower carrying platform, and the middle ring body is grounded;
the upper pressure ring is used for placing the upper loading platform quartz wafer between the upper pressure ring and the elastic sheet A, the upper loading platform quartz wafer is exposed through an opening on the upper pressure ring and is in direct contact with the deposition direction of a coating material, the upper pressure ring is used as one electrode of the upper loading platform quartz wafer, the electrode A is used as the other electrode of the upper loading platform quartz wafer, the upper loading platform quartz wafer is arranged on the middle ring body through the insulating ring A, is inserted into the insulating I-shaped support and is electrically connected with the elastic sheet A through the fixing screw A, and the upper loading platform is formed;
the lower pressing cover is provided with a small number of micropores, so that the lower quartz wafer cannot be deposited with a film during film coating, the lower pressing cover serves as one electrode of the lower stage quartz wafer, the electrode B serves as the other electrode of the lower stage quartz wafer, the lower pressing cover is installed on the middle ring body through the insulating ring B, is inserted into the insulating I-shaped support and is electrically connected with the elastic sheet B through the fixing screw B, and the lower stage is formed.
Furthermore, the conductive structure on the quartz plate carrying platform is made of metal materials with good thermal conductivity, such as metal copper, silver and the like.
Furthermore, the insulating structure on the quartz plate carrying platform is made of high-temperature-resistant materials, such as polyimide, mica, quartz, glass fiber and other high-temperature-resistant insulating materials.
Furthermore, 2 radio frequency connector lugs are arranged on the radio frequency connector base.
Furthermore, the crystal control host is provided with 2 or more than 2 input connectors, and the input connectors are accessed in a time-sharing manner through program control, so that multi-path common measurement is realized.
The utility model discloses the beneficial effect who reaches: the device can be applied in a high-temperature coating environment, a water cooling device is not needed, on one hand, coating shadows are eliminated, the air leakage and water leakage probability is reduced, on the other hand, the design and the manufacture of the wafer carrying platform and the radio frequency wiring base are convenient, the structure is small and exquisite, the manufacturing cost is low, and meanwhile, the crystal control instrument can measure the thickness and the temperature of the film in real time during coating.
Drawings
FIG. 1 is a cross-sectional view of a stage for a quartz wafer according to an embodiment.
Detailed Description
The present invention will be further described with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
A high-temperature-resistant dual-purpose crystal control instrument comprises a quartz plate carrying platform connected with a substrate support in a vacuum chamber, a radio frequency wiring base arranged in the vacuum chamber and connected with the quartz plate carrying platform, and a crystal control host arranged outside the vacuum chamber.
The section of the quartz plate carrying platform is shown in fig. 1, wherein 1 is a copper pressing ring with a hole in the middle, and is connected with a copper ring body 4 through a thread, the copper pressing ring 1 presses the wafer 31 on a copper elastic sheet 613, and one surface of the wafer is exposed through the hole of the copper pressing ring 1 and faces the deposition direction of the coating material, so that a film is deposited on the wafer during coating. The copper elastic sheet 613 passes through the ptfe holder 5 through the copper screw 614 and is fixed on the copper rod 612, and the copper rod 612 is sleeved on the ptfe ring 611 and inserted into an opening at one side of the ptfe holder 5. The polytetrafluoroethylene ring 611 is inserted into a side ring surface opening of the copper ring body 4. In the other direction, the copper press ring 2 with a small number of micro-holes 21 is connected with the copper ring 4 by screw threads, and the wafer 32 is pressed on the copper spring 623, because the micro-holes have small size and face away from the coating direction, no film is deposited during coating. The copper shrapnel 623 passes through the polytetrafluoroethylene support 5 through the copper screw 624 and is fixed on the copper bar 622, the copper bar 622 is sleeved on the polytetrafluoroethylene ring 621, and the copper bar is inserted into a side opening of the polytetrafluoroethylene support 5. The polytetrafluoroethylene ring 621 is inserted into a side ring surface opening of the copper ring body 4. Copper ring 4 ground connection, and bar copper 612 and 622 are the other electrode of wafer 31 and wafer 32 respectively, are connected to the radio frequency connection terminal on the vacuum cavity through coaxial cable on, then are connected to the brilliant accuse host computer outside the vacuum chamber through coaxial cable on, can adopt the connector to connect between the cable, convenient high-speed joint.
The host computer reads corresponding frequency by switching on the circuit for controlling the two wafers in a time-sharing way, and obtains the deposition thickness of the film and the current temperature of the carrying platform by comparing the frequency with the eigen frequency. When the wafer stage is in good contact with the substrate stage, the substrate temperature will be reflected in real time due to the high thermal conductivity of copper. In addition, because the two wafers are arranged on the same wafer carrier, the two wafers have approximate temperatures, and the influence of the temperature on the frequency of the wafers can be eliminated by comparing the eigenfrequency of the wafers without being coated with the film with the actual frequency. Therefore, the purpose of simultaneously measuring the temperature and the deposition thickness by the crystal control instrument is realized.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be considered as the protection scope of the present invention.
Claims (4)
1. A high-temperature-resistant dual-purpose crystal control instrument is characterized by comprising a quartz plate carrying platform, a radio-frequency wire holder and a crystal control host, wherein the quartz plate carrying platform is connected with a substrate support in a vacuum chamber, the radio-frequency wire holder is arranged in the vacuum chamber and connected with the quartz plate carrying platform, the crystal control host is arranged outside the vacuum chamber, the quartz plate carrying platform comprises an upper carrying platform and a lower carrying platform which are opposite and used for placing a quartz wafer respectively, one surface of the quartz plate of the upper carrying platform is exposed to a film coating direction in a right-facing mode with a proper area, the quartz plate of the lower carrying platform is arranged in the opposite direction of the film coating direction and is exposed to the outside only through a small number of vent holes, so that an upper.
2. The high-temperature-resistant dual-purpose crystal control instrument according to claim 1, wherein the quartz plate carrying platform comprises an upper pressing ring, a lower pressing cover, a middle ring body, an elastic sheet A, an elastic sheet B, a fixing screw A, a fixing screw B, an electrode A, an electrode B, an insulating ring A, an insulating ring B and an insulating I-shaped bracket;
the upper pressure ring and the lower pressure cover are respectively in threaded connection with the middle ring body to form the quartz piece carrying platform main body, the insulating I-shaped support is positioned in the middle of the main body and divides the upper pressure ring and the lower pressure ring into the upper carrying platform and the lower carrying platform, and the middle ring body is grounded;
the upper pressure ring is used for placing the upper loading platform quartz wafer between the upper pressure ring and the elastic sheet A, the upper loading platform quartz wafer is exposed through an opening on the upper pressure ring and is in direct contact with the deposition direction of a coating material, the upper pressure ring is used as one electrode of the upper loading platform quartz wafer, the electrode A is used as the other electrode of the upper loading platform quartz wafer, the upper loading platform quartz wafer is arranged on the middle ring body through the insulating ring A, is inserted into the insulating I-shaped support and is electrically connected with the elastic sheet A through the fixing screw A, and the upper loading platform is formed;
the lower pressing cover is provided with a small number of micropores, so that the lower quartz wafer cannot be deposited with a film during film coating, the lower pressing cover serves as one electrode of the lower stage quartz wafer, the electrode B serves as the other electrode of the lower stage quartz wafer, the lower pressing cover is installed on the middle ring body through the insulating ring B, is inserted into the insulating I-shaped support and is electrically connected with the elastic sheet B through the fixing screw B, and the lower stage is formed.
3. The dual-purpose crystal control instrument with high temperature resistance as claimed in claim 1, wherein 2 rf connector terminals are disposed on the rf connector base.
4. The high-temperature-resistant dual-purpose crystal control instrument according to claim 1, wherein the crystal control host is provided with 2 or more input connectors, and the input connectors are accessed in a time-sharing manner through program control, so that multi-path common measurement is realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921033917.6U CN210657121U (en) | 2019-07-04 | 2019-07-04 | High-temperature-resistant dual-purpose crystal control instrument |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921033917.6U CN210657121U (en) | 2019-07-04 | 2019-07-04 | High-temperature-resistant dual-purpose crystal control instrument |
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| CN210657121U true CN210657121U (en) | 2020-06-02 |
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| CN201921033917.6U Active CN210657121U (en) | 2019-07-04 | 2019-07-04 | High-temperature-resistant dual-purpose crystal control instrument |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110205600A (en) * | 2019-07-04 | 2019-09-06 | 浙江大学昆山创新中心 | A kind of high temperature resistant dual purpose crystalline substance control instrument |
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2019
- 2019-07-04 CN CN201921033917.6U patent/CN210657121U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110205600A (en) * | 2019-07-04 | 2019-09-06 | 浙江大学昆山创新中心 | A kind of high temperature resistant dual purpose crystalline substance control instrument |
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