CN210628323U - Near infrared photoelectric detector - Google Patents
Near infrared photoelectric detector Download PDFInfo
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- CN210628323U CN210628323U CN201922224855.3U CN201922224855U CN210628323U CN 210628323 U CN210628323 U CN 210628323U CN 201922224855 U CN201922224855 U CN 201922224855U CN 210628323 U CN210628323 U CN 210628323U
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Abstract
The utility model discloses a near infrared photoelectric detector, which comprises a back electrode layer, a doped semiconductor layer and a front electrode layer from bottom to top in sequence; the front electrode layer is arranged on one side of the top surface of the doped semiconductor layer, and a plurality of nanostructure layers which are arranged in parallel and intersect with the side included angle of the front electrode layer are arranged on the inner side surface of the front electrode layer; the nano-structure layer and the front electrode layer form an intersected comb-shaped structure; the nanostructure layer and the front electrode layer are both disposed on the doped semiconductor layer.The utility model discloses a near infrared photoelectric detector's Ti3C2TXProved to have good metallic properties and thus can be used as a metal part in a near infrared photoelectric detector based on hot electron detection. Due to the existence of external functional groups and no mutual connection between the functional groups, the probe has low electrical noise and high signal-to-noise ratio.
Description
Technical Field
The utility model relates to a detector field specifically is a near infrared photoelectric detector.
Background
The near infrared photoelectric detector has wide application in civil and military, such as aerospace, optical communication, industrial control, near infrared imaging and other fields. The principle of the near infrared photoelectric detector is based on the photoelectric effect that photons of infrared radiation excite non-equilibrium carriers in a semiconductor, so that the electrical properties of the semiconductor are changed, and the semiconductor is detected by instrument equipment. The detection limit of commercial near infrared detectors such as Si is 1107nm (Si has a band gap of 1.12 eV). In general, the detection at 900-. And InGaAs is commonly used as a detector in the near infrared from 1107nm to 2500nm, and the detector is expensive and generally about tens of thousands yuan. HgCdTe based detectors, while capable of detection in the near and mid infrared, contain toxic mercury and require refrigeration. It is therefore highly desirable to find a low cost infrared detector.
Knight et al, 2011, showed a free space thermionic near infrared photodetector based on plasmonic nanoantennas and silicon, capable of detecting near infrared light below the band gap energy of silicon (Science 2011; 332: 702-4). The working principle of the device is as follows: plasmonic nano-antennas act as both light collectors and electron emitters. After absorption by the plasmonic antenna, the light, after non-radiative decay of the surface plasmons, generates hot electrons and injects them into the conduction band of an n-type silicon substrate, which is then collected by ohmic contact on silicon, as shown in fig. 1 (adv.
However, the detector of the present structure is relatively noisy, and its signal-to-noise ratio is very low when detecting weak signals.
In the prior art, a near infrared detector based on hot electrons can detect optical signals outside a forbidden band of a semiconductor, and the detection limit of the near infrared detector is a Schottky barrier q phi B of metal and semiconductor contact. However, at normal temperature, its electrical noise is relatively large, and therefore, it is necessary to solve the problem that such a detector is high in noise at normal temperature.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a solve the detector high defect of noise under the normal atmospheric temperature that exists among the prior art, provide the electric noise that can effectual reduction device, make its SNR reach > 120 dB.
In order to achieve the above purpose, the utility model adopts the following scheme:
a near infrared photoelectric detector sequentially comprises a back electrode layer, a doped semiconductor layer and a front electrode layer from bottom to top; the front electrode layer is arranged on one side of the top surface of the doped semiconductor layer, and a plurality of nanostructure layers which are arranged in parallel and intersect with the side included angle of the front electrode layer are arranged on the inner side surface of the front electrode layer; the nano-structure layer and the front electrode layer form an intersected comb-shaped structure; the nanostructure layer and the front electrode layer are both disposed on the doped semiconductor layer. The comb-shaped structure is characterized in that the front electrode layer is a laminated plate with a thinner width, is connected to the side face of the nano-structure layer and is connected with the nano-structure layer at a right angle or at a certain included angle, and the front electrode layers are arranged in a plurality and are arranged in parallel mutually and are all connected to the same side face of the nano-structure layer.
The utility model discloses still provide following optimization scheme:
preferably, the material of the back electrode layer is Ti3C2TXA film.
Preferably, the doped semiconductor layer is made of an n-type semiconductor or a p-type semiconductor.
Preferably, the front electrode layer is made of Ti3C2TXA film.
Preferably, the material of the nanostructure layer is Ti3C2TXA nanostructure.
Preferably, the included angle between the front electrode layer and the nanostructure layer is 90 degrees.
Preferably, the nanostructure layer is an MXene nanostructure layer.
The utility model discloses a near infrared photoelectric detector has following beneficial effect:
1. the near infrared photoelectric detector of the utility model adopts MXene material to replace traditional gold and silver material, thus achieving the purpose of reducing noise;
2. the utility model discloses a near infrared photoelectric detector's Ti3C2TXProved to have good metallic properties and thus can be used as a metal part in a near infrared photoelectric detector based on hot electron detection. Due to the existence of external functional groups and no mutual connection between the functional groups, the probe has low electrical noise and high signal-to-noise ratio.
Drawings
FIG. 1 is a schematic diagram of a conventional free-space thermionic near infrared photodetector;
fig. 2 is a side view of a near infrared photodetector according to a preferred embodiment of the present invention;
fig. 3 is a top view of a near infrared photodetector according to a preferred embodiment of the present invention;
the specific reference numerals are:
1 a back electrode layer; 2 doping the semiconductor layer; 3 a front electrode layer; 4 nanostructured layers.
Detailed Description
In order to make the technical solutions of the present invention better understood by those skilled in the art, the present invention will be described in further detail with reference to the following embodiments.
As shown in fig. 2 and 3, the near infrared photoelectric detector of the present invention sequentially includes a back electrode layer 1, a doped semiconductor layer 2, and a front electrode layer 3 from bottom to top; the front electrode layer 3 is arranged on one side of the top surface of the doped semiconductor layer 2, and a plurality of nanostructure layers 4 which are arranged in parallel and intersect with the side included angle of the front electrode layer 3 are arranged on the inner side surface of the front electrode layer 3; the nanostructure layer 4 and the front electrode layer 3 form an intersected comb-shaped structure; the nanostructure layer 4 and the front electrode layer 3 are both arranged on the doped semiconductor layer 2.
The back electrode layer 1 and the doped semiconductor layer 2 are preferably arranged to be rectangular in cross section, more preferably square in cross section, the back electrode layer 1 is arranged at the lowest layer, the doped semiconductor layer 2 is arranged on the back electrode layer 1, and the doped semiconductor layer 2 is provided with the front electrode layer 3 and the nanostructure layer 4. The front electrode layer 3 and the nanostructure layer 4 are at the same height, and the front electrode layer 3 is arranged on one side of the doped semiconductor layer 2 and is connected with the plurality of nanostructure layers 4 which are parallel to each other to form a comb-shaped structure.
The back electrode layer 1 is made of Ti3C2TXA film. The thickness of the back electrode layer 1 was 600 nm.
The doped semiconductor layer 2 is made of an n-type semiconductor or a p-type semiconductor. In a preferred embodiment, the doped semiconductor layer 2 is an n-type Si material with a thickness of 500nm, a crystal orientation of <100>, and a resistivity of 1-10 Ω cm.
The front electrode layer 3 is made of Ti3C2TXA film. The thickness of the front electrode layer 3 is consistent with that of the nanostructure layer 4, and the shape of the front electrode layer is a continuous film.
In a preferred embodiment, the material of the nanostructure layer 4 is Ti3C2TXA nanostructure. The thickness is 400 nm; the length of the nanostructure layer 4 is 2 microns; the width is 100-200nm, and the distance between the two is 200-300 nm.
In a preferred embodiment, the front electrode layer 3 and the nanostructure layer 4 form an angle of 90 degrees.
In a preferred embodiment, the nanostructure layer 4 is an MXene nanostructure layer 4.
MXene materials are a class of metal carbide and metal nitride materials with a two-dimensional layered structure, which have excellent ductility and a chemical composition of MnXn+1Tx, wherein M represents a transition metal, X represents carbon or nitrogen, and T represents a functional group. Wherein Ti3C2TXProved to have good metallic properties and thus can be used as a metal part in a near infrared photoelectric detector based on hot electron detection. Due to the existence of external functional groups and no mutual connection among the functional groups, the probe has low electrical noise and high signal-to-noise ratio.
The near infrared photoelectric detector of the utility model has the working principle that Ti is irradiated by light3C2TXThe nano structure can generate hot electrons due to a plasmon effect, the hot electrons cross the Schottky barrier and are injected into a semiconductor and further collected by the electrode, and the detection capability of the nano structure can detect light larger than 0.64 eV. Very low electrical noise can be achieved with signal to noise ratios higher than 120 dB.
The above is only a preferred embodiment of the present invention, and it should be noted that the above preferred embodiment should not be considered as limiting the present invention, and the protection scope of the present invention should be subject to the scope defined by the claims. It will be apparent to those skilled in the art that various modifications and enhancements can be made without departing from the spirit and scope of the invention, and such modifications and enhancements are intended to be within the scope of the invention.
Claims (7)
1. A near infrared photodetector characterized by: the doped semiconductor layer comprises a back electrode layer, a doped semiconductor layer and a front electrode layer from bottom to top in sequence; the front electrode layer is arranged on one side of the top surface of the doped semiconductor layer, and a plurality of nanostructure layers which are arranged in parallel and intersect with the side included angle of the front electrode layer are arranged on the inner side surface of the front electrode layer; the nano-structure layer and the front electrode layer form an intersected comb-shaped structure; the nanostructure layer and the front electrode layer are both disposed on the doped semiconductor layer.
2. The near-infrared photodetector of claim 1, wherein: the back electrode layer is made of Ti3C2TXA film.
3. The near-infrared photodetector of claim 1, wherein: the doped semiconductor layer is made of an n-type semiconductor or a p-type semiconductor.
4. The near-infrared photodetector of claim 1, wherein: the front electrode layer is made of Ti3C2TXA film.
5. The near-infrared photodetector of claim 1, wherein: the nano-structure layer is made of Ti3C2TXA nanostructure.
6. The near-infrared photodetector of claim 1, wherein: the included angle between the front electrode layer and the nano-structure layer is 90 degrees.
7. The near-infrared photodetector of claim 1, wherein: the nanostructure layer is an MXene nanostructure layer.
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| CN201922224855.3U CN210628323U (en) | 2019-12-12 | 2019-12-12 | Near infrared photoelectric detector |
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| CN201922224855.3U CN210628323U (en) | 2019-12-12 | 2019-12-12 | Near infrared photoelectric detector |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113097315A (en) * | 2021-03-30 | 2021-07-09 | 电子科技大学 | MSM multi-quantum well photoelectric detector using MXene-GaN Schottky junction and preparation method thereof |
| CN115442687A (en) * | 2022-08-31 | 2022-12-06 | 电子科技大学 | Double-diaphragm optical microphone |
| WO2024038897A1 (en) * | 2022-08-18 | 2024-02-22 | 国立大学法人東京大学 | Element, element manufacturing method, and photonic spin register |
-
2019
- 2019-12-12 CN CN201922224855.3U patent/CN210628323U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113097315A (en) * | 2021-03-30 | 2021-07-09 | 电子科技大学 | MSM multi-quantum well photoelectric detector using MXene-GaN Schottky junction and preparation method thereof |
| CN113097315B (en) * | 2021-03-30 | 2022-10-11 | 电子科技大学 | MSM multi-quantum well photoelectric detector using MXene-GaN Schottky junction and preparation method thereof |
| WO2024038897A1 (en) * | 2022-08-18 | 2024-02-22 | 国立大学法人東京大学 | Element, element manufacturing method, and photonic spin register |
| CN115442687A (en) * | 2022-08-31 | 2022-12-06 | 电子科技大学 | Double-diaphragm optical microphone |
| CN115442687B (en) * | 2022-08-31 | 2024-04-26 | 电子科技大学 | Double-diaphragm optical microphone |
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