CN210626877U - Light source energy intensity monitoring system and photoetching machine - Google Patents

Light source energy intensity monitoring system and photoetching machine Download PDF

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Publication number
CN210626877U
CN210626877U CN201921106219.4U CN201921106219U CN210626877U CN 210626877 U CN210626877 U CN 210626877U CN 201921106219 U CN201921106219 U CN 201921106219U CN 210626877 U CN210626877 U CN 210626877U
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light
light source
monitoring
path
energy intensity
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徐占辉
张晓辉
刘景华
肖自雄
区俊杰
尹建刚
高云峰
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Shenzhen Hans Semiconductor Equipment Technology Co Ltd
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Han s Laser Technology Industry Group Co Ltd
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Abstract

The utility model discloses a light source energy intensity monitoring system and lithography machine, wherein, a light source energy intensity monitoring system, include: the device comprises an illumination light path and a monitoring light path, wherein the illumination light path comprises a light source and a spectroscope which are arranged in the same horizontal direction along the light path, and the monitoring light path comprises a photoelectric detector; after the light emitted by the light source passes through the spectroscope, a part of the light is partially reflected or partially transmitted to the monitoring light path by the spectroscope and can be collected by the photoelectric detector. The light source energy intensity monitoring system in the embodiment has the advantages that the spectroscope is added in the illumination light path, so that the light source emission part is reflected or partially transmitted to the monitoring light path and is collected by the photoelectric detector in the monitoring light path, the monitoring on the light intensity size and the light intensity consistency of the illumination light spot when the photoetching machine works is realized, and the difficulty and the inconvenience existing in the traditional manual inspection mode are solved.

Description

Light source energy intensity monitoring system and photoetching machine
Technical Field
The utility model relates to a photoetching technology field, more specifically relates to a light source energy intensity monitoring system and photoetching machine.
Background
In the technical field of photoetching, the requirements on the energy distribution uniformity and the light intensity stability of light spots are high, and if the energy of a light source is unstable, the quality of a product subjected to photoetching or cutting can be directly influenced.
Therefore, the conventional lithography machine needs to periodically detect the illumination performance to ensure the energy stability of the light source. However, the illumination performance detection usually adopts a manual inspection mode, the detector is manually used to directly measure the illumination light spot, and then the intensity of the illumination light spot and the consistency of the intensity are manually corrected, so that the efficiency is very low, and the real-time dynamic monitoring of the light source energy of the lithography machine cannot be realized.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the problem that needs to solve lies in, provides a light source energy intensity monitoring system and lithography machine for solve above-mentioned problem.
In order to solve the above problem, the utility model discloses a technical scheme who adopts is: there is provided a light source energy intensity monitoring system comprising: the device comprises an illumination light path and a monitoring light path, wherein the illumination light path comprises a light source and a spectroscope which are arranged in the same horizontal direction along the light path, and the monitoring light path comprises a photoelectric detector; after the light emitted by the light source passes through the spectroscope, a part of the light is partially reflected or partially transmitted to the monitoring light path by the spectroscope and can be collected by the photoelectric detector.
Wherein the illumination light path further comprises a collimating mirror; the collimating mirror is arranged between the light source and the spectroscope, the light source and the collimating mirror are arranged in the same horizontal direction along a light path, and the collimating mirror is used for maintaining the collimation of the light beam emitted by the light source.
Wherein the illumination light path further comprises an optical integrator; the optical integrator is arranged between the collimating mirror and the spectroscope and used for homogenizing the light intensity of the light beam emitted by the light source.
The monitoring light path further comprises a monitoring condenser; the monitoring condenser is arranged in front of the photoelectric detector, the monitoring condenser and the photoelectric detector are arranged on the same horizontal direction, and the monitoring condenser is used for gathering light beams which are reflected to the photoelectric detector partially or transmitted to the photoelectric detector partially through the spectroscope.
The monitoring light path further comprises an optical filter; the optical filter is arranged between the monitoring condenser and the photoelectric detector, the monitoring condenser, the optical filter and the photoelectric detector are arranged on the same horizontal direction along a light path, and the optical filter is used for filtering light rays with specific wavelengths.
Wherein the illumination light path further comprises an illumination objective lens, and the illumination objective lens is arranged below the spectroscope.
Wherein the light source is an LED light source or a high-pressure mercury lamp.
Wherein the photodetector is a photodiode.
The photoelectric detector is an area array detector.
In order to solve the above problem, the utility model discloses another kind of technical scheme who adopts is: there is provided a lithographic apparatus comprising: the light source energy intensity monitoring system, the photoetching projection lens, the wafer carrying platform, the lens bracket and the marble platform are adopted; the lens support and the wafer carrying platform are respectively arranged on the marble platform, and the photoetching projection lens is arranged on the lens support.
Compared with the prior art, the utility model has the advantages that:
the spectroscope is added in the illumination light path, so that the light source emission part is reflected or partially transmitted to the monitoring light path and is collected by the photoelectric detector in the monitoring light path, thereby realizing the monitoring of the light intensity and the light intensity consistency of the illumination light spot when the photoetching machine works, and solving the difficulty and inconvenience existing in the traditional manual inspection mode.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a lithography machine employing a laser energy intensity monitoring system according to an embodiment of the present invention.
Description of reference numerals: the device comprises a photoetching machine-10, an illumination light path-11, a light source-111, a collimating mirror-112, an optical integrator-113, a spectroscope-115, an illumination objective-114, a monitoring light path-12, a monitoring condenser-121, a filter-122, a photoelectric detector-123, a mask plate-13, a photoetching projection lens-14, a wafer-15, a wafer carrying platform-16, a lens support-17 and a marble platform-18.
Detailed Description
In order to make the technical field person understand the scheme of the present invention better, the following will combine the drawings in the embodiments of the present invention to clearly and completely describe the technical scheme in the embodiments of the present invention. It is to be understood that the embodiments described are merely exemplary of the invention, and that no limitations are intended to the details of construction or design herein shown. The present invention may be embodied in many different forms and is not limited to the embodiments described herein, which are provided for the purpose of providing a more thorough understanding of the present disclosure. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a lithography machine employing a laser energy intensity monitoring system according to an embodiment of the present invention, wherein the laser energy intensity monitoring system includes: an illumination optical path 11 and a monitoring optical path 12;
the illumination light path 11 may include a light source 111 and a spectroscope 115 arranged in the same horizontal direction along the light path, and the monitoring light path 12 includes a photodetector 123; when the light emitted from the light source 111 passes through the beam splitter 115, a part of the light is partially reflected by the beam splitter 115 or partially transmitted to the monitoring optical path 12, and can be collected by the photodetector 123.
Further, the partial reflection or partial transmission of the light emitted from the light source 111 through the beam splitter 115 is determined by which beam splitter 115 is specifically adopted, and in the embodiment, the beam splitter 115 is preferably a planar beam splitter.
Further, the illumination light path 11 may further include a collimating mirror 112, the collimating mirror 112 is disposed between the light source 111 and the beam splitter 115, the light source 111 and the collimating mirror 112 are disposed in the same horizontal direction along the light path, and the collimating mirror 112 is configured to maintain the collimation of the light beam emitted by the light source 111.
Further, the illumination path 11 may further include an optical integrator 113, where the optical integrator 113 is disposed between the collimating mirror 112 and the beam splitter 115, and the optical integrator 113 is configured to homogenize the light intensity of the light beam emitted by the light source 111.
Further, the optical integrator 113 may be a fly-eye lens group or a light pipe.
Further, the monitoring optical path 12 may further include a monitoring collecting mirror 121, the monitoring collecting mirror 121 is disposed in front of the photodetector 123, the monitoring collecting mirror 121 and the photodetector 123 are disposed in the same horizontal direction, and the monitoring collecting mirror 121 is configured to collect a light beam that is partially reflected or partially transmitted by the beam splitter 115 and emitted to the photodetector 123.
Further, the monitoring optical path 12 may further include a filter 122; the optical filter 122 is disposed between the monitoring condenser 121 and the photodetector 123, the monitoring condenser 121, the optical filter 122, and the photodetector 123 are disposed along the optical path in the same horizontal direction, and the optical filter 122 is configured to filter light with a specific wavelength.
Further, the illumination optical path 11 may further include an illumination objective lens 114, and the illumination objective lens 114 is disposed below the beam splitter 115.
In some embodiments, the light source 111 may be an LED light source for emitting ultraviolet light containing a specific wavelength.
In some embodiments, light source 111 may be a high pressure mercury lamp for emitting ultraviolet light of a particular wavelength.
In some embodiments, the photodetector 123 may be a photodiode for converting light into an electrical signal to detect the light intensity in real time.
In this embodiment, the photo detector 123 is preferably an area array detector, and may be composed of a plurality of photo detectors arrayed in a plane, and can simultaneously convert light on a plane into an electrical signal, so as to detect real-time light intensity and determine whether the light intensity of the light spot is uniform, or may be a CCD detector.
Further, since the monitor spot and the illumination spot share one optical integrator 113, the difference is that the spot size is different due to the different focal lengths of the condensing lenses. Therefore, the energy distribution of the illumination light spots and the energy distribution of the monitoring light spots are the same, the sizes of the illumination light spots and the monitoring light spots are different, the energy density ratio is also a constant value, based on the principle, the photoelectric detector is placed at the monitoring light spots, and the energy distribution and the size of the illumination light spots can be mastered in real time by detecting the energy size and the distribution condition of the monitoring light spots.
In summary, the present embodiment provides a light source energy intensity monitoring system, which includes a spectroscope added in an illumination light path, such that a light source emitting portion reflects or partially transmits to a monitoring light path, and is collected by a photodetector in the monitoring light path, thereby achieving monitoring of light intensity and light intensity consistency of an illumination light spot when a lithography machine works, and solving difficulties and inconveniences existing in a traditional manual inspection mode.
Referring again to fig. 1, a lithography machine 10 employing a laser energy intensity monitoring system includes: the above-mentioned light source energy intensity monitoring system, as well as the lithography projection lens 14, the wafer stage 16, the lens holder 17 and the marble platform 18;
wherein, the lens holder 17 and the wafer stage 16 are respectively disposed on the marble platform 18, and the projection lens 14 is disposed on the lens holder 17.
Further, the illumination optical path 11 and the monitoring optical path 12 in the light source energy intensity monitoring system may be connected to the marble platform 18 through some supporting structures such as brackets, or may not be connected to the marble platform 18.
In summary, in the embodiment of the lithography machine using the light source energy intensity monitoring system, when working, light emitted by a light source in an illumination light path passes through a beam splitter, and is partially reflected or partially transmitted to a monitoring light path, the monitoring light path can collect light intensity information in real time or detect real-time light intensity through a photoelectric detector and judge whether the light intensity of a light spot is uniform, and when light emitted through the illumination light path passes through a mask plate 13, part of the light is blocked by the mask plate 13, and the rest of the light is projected onto a wafer 15 on a wafer stage 16 through a lithography projection lens 14, so that a photoresist exposure process in lithography is completed.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing detailed description, or equivalent replacements may be made for some of the technical features of the embodiments. All utilize the equivalent structure that the content of the utility model discloses a specification and attached drawing was done, direct or indirect application is in other relevant technical field, all is in the same way the utility model discloses within the patent protection scope.

Claims (10)

1. A light source energy intensity monitoring system, comprising:
an illumination light path (11) and a monitoring light path (12);
the illumination light path (11) comprises a light source (111) and a spectroscope (115) which are arranged in the same horizontal direction along the light path, and the monitoring light path (12) comprises a photoelectric detector (123);
after the light emitted by the light source (111) passes through the spectroscope (115), a part of the light is partially reflected by the spectroscope (115) or partially transmitted to the monitoring light path (12), and can be collected by the photoelectric detector (123).
2. A light source energy intensity monitoring system according to claim 1, wherein said illumination light path (11) further comprises a collimating mirror (112);
the collimating mirror (112) is disposed between the light source (111) and the beam splitter (115), the light source (111) and the collimating mirror (112) are disposed in the same horizontal direction along a light path, and the collimating mirror (112) is configured to maintain collimation of a light beam emitted by the light source (111).
3. A light source energy intensity monitoring system according to claim 2, characterized in that said illumination light path (11) further comprises an optical integrator (113);
the optical integrator (113) is arranged between the collimating mirror (112) and the spectroscope (115), and the optical integrator (113) is used for homogenizing the light intensity of the light beam emitted by the light source (111).
4. A light source energy intensity monitoring system according to claim 1, wherein said monitoring optical path (12) further comprises a monitoring condenser (121);
the monitoring light-collecting mirror (121) is arranged in front of the photoelectric detector (123), the monitoring light-collecting mirror (121) and the photoelectric detector (123) are arranged on the same horizontal direction, and the monitoring light-collecting mirror (121) is used for gathering light beams which are reflected partially or transmitted partially to the photoelectric detector (123) through the spectroscope (115).
5. The system as claimed in claim 4, wherein the monitoring optical path (12) further comprises an optical filter (122);
the optical filter (122) is arranged between the monitoring condenser (121) and the photoelectric detector (123), the monitoring condenser (121), the optical filter (122) and the photoelectric detector (123) are arranged on the same horizontal direction along a light path, and the optical filter (122) is used for filtering light rays with specific wavelengths.
6. The system of claim 1, wherein the light source energy intensity monitoring system,
the illumination beam path (11) further comprises an illumination objective (114), wherein the illumination objective (114) is arranged below the beam splitter (115).
7. The system of claim 1, wherein the light source energy intensity monitoring system,
the light source (111) is an LED light source or a high-pressure mercury lamp.
8. The system of claim 1, wherein the light source energy intensity monitoring system,
the photodetector (123) is a photodiode.
9. The system of claim 1, wherein the light source energy intensity monitoring system,
the photoelectric detector (123) is an area array detector.
10. A lithography machine, comprising: a light source energy intensity monitoring system as claimed in any one of claims 1 to 9 in combination with a lithographic projection lens (14), a wafer stage (16), a lens holder (17) and a marble table (18);
the lens support (17) and the wafer carrying platform (16) are respectively arranged on the marble platform (18), and the photoetching projection lens (14) is arranged on the lens support (17).
CN201921106219.4U 2019-07-15 2019-07-15 Light source energy intensity monitoring system and photoetching machine Active CN210626877U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201921106219.4U CN210626877U (en) 2019-07-15 2019-07-15 Light source energy intensity monitoring system and photoetching machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201921106219.4U CN210626877U (en) 2019-07-15 2019-07-15 Light source energy intensity monitoring system and photoetching machine

Publications (1)

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CN210626877U true CN210626877U (en) 2020-05-26

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114325890A (en) * 2021-12-30 2022-04-12 拓荆科技股份有限公司 Optical lighting device and optical modification equipment
CN114325889A (en) * 2021-12-30 2022-04-12 拓荆科技股份有限公司 Optical lighting device and optical modification equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114325890A (en) * 2021-12-30 2022-04-12 拓荆科技股份有限公司 Optical lighting device and optical modification equipment
CN114325889A (en) * 2021-12-30 2022-04-12 拓荆科技股份有限公司 Optical lighting device and optical modification equipment

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Effective date of registration: 20220801

Address after: 518000 101, building 6, Wanyan Industrial Zone, Qiaotou community, Fuhai street, Bao'an District, Shenzhen City, Guangdong Province

Patentee after: Shenzhen Han's Semiconductor Equipment Technology Co.,Ltd.

Address before: 518000 9 new West Road, North Nanshan District high tech park, Shenzhen, Guangdong

Patentee before: HAN'S LASER TECHNOLOGY INDUSTRY GROUP Co.,Ltd.

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