CN114325890A - Optical lighting device and optical modification equipment - Google Patents
Optical lighting device and optical modification equipment Download PDFInfo
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- CN114325890A CN114325890A CN202111669190.2A CN202111669190A CN114325890A CN 114325890 A CN114325890 A CN 114325890A CN 202111669190 A CN202111669190 A CN 202111669190A CN 114325890 A CN114325890 A CN 114325890A
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Abstract
The invention discloses an optical lighting device and optical modification equipment, wherein the optical lighting device comprises a line light source, a light modulation component and a scanning reflector, the light modulation component is used for modulating light rays emitted by the line light source into parallel light, and forming a light band with a set length after homogenization, and the scanning reflector is used for reflecting the light band to a working surface of a processing piece; the scanning mirror is used for scanning a working surface, and the scanning mirror is driven to reciprocate along a set direction, wherein the set direction is parallel to the working surface; or the scanning reflecting mirror is a spherical mirror, and the light ray range reflected to the working surface by the scanning reflecting mirror at least covers the working surface. The structure of the optical lighting device can improve the local irradiation energy density, so that the total irradiation energy received by different areas of the target working surface is relatively more uniform, and the cost can be saved.
Description
Technical Field
The invention relates to the technical field of optical modification treatment, in particular to an optical lighting device and optical modification equipment.
Background
The optical modification treatment of thin films in the semiconductor industry or the optical modification treatment of thin films in the LED and flat panel display industry is generally performed by using an optical modification apparatus.
Take ultraviolet light modification equipment as an example, its ultraviolet light lighting device generally adopts the rotatory scheme of area source auxiliary lighting head, adopt one or two ultraviolet fluorescent tubes as the light source to cooperate the light path design to reach the effect of area source on engineering design, the irradiation intensity difference of such area source different regions on the target working face is very big, can only reach local light intensity time integral on the working face and reach certain homogeneity through letting the lighting head rotate, namely the total irradiation measurement of local region is close to evenly on the working face in whole technological process, in fact hardly reaches better homogeneity.
Because the surface light source has poor uniformity of the whole irradiation intensity under the condition that the illuminating head does not rotate, different regions have queuing effects with different durations for a working surface receiving light treatment, and the queuing effects are obvious due to the slow rotating speed of the illuminating head during actual setting.
In addition, in practical application, because part of light emitted by the ultraviolet lamp is rejected aiming at the uniformity adjustment of the surface light source, the effective utilization rate of the light is about 40% -50% under normal conditions, the energy efficiency ratio is poor, and for the light treatment of a 12-inch wafer, two lamp tubes are required to be arranged on one wafer, so that the cost is directly increased.
Disclosure of Invention
The invention aims to provide an optical illumination device and optical modification equipment, wherein the optical illumination device can improve the local irradiation energy density through the structural arrangement, so that the total irradiation energy received by different regions of a target working surface is relatively uniform, and the cost can be saved.
In order to solve the technical problem, the invention provides an optical lighting device, which comprises a line light source, a light modulation component and a scanning reflecting mirror, wherein the light modulation component is used for modulating light rays emitted by the line light source into parallel light, homogenizing the parallel light rays to form a light band with a set length, and the scanning reflecting mirror is used for reflecting the light band to a working surface of a processing piece;
the scanning mirror is used for scanning a working surface, and the scanning mirror is driven to reciprocate along a set direction, wherein the set direction is parallel to the working surface; or the scanning reflecting mirror is a spherical mirror, and the light ray range reflected to the working surface by the scanning reflecting mirror at least covers the working surface.
The optical lighting device is characterized in that a light source is set as a linear light source, a light modulation component is arranged on a light path, light emitted by the linear light source is modulated into parallel light by the light modulation component, a light band with a set length is formed after homogenization, and the light band is reflected to a working surface of a processing piece by a scanning reflector, so that the modification processing of the working surface is realized; after the arrangement, the effective utilization rate of light and the local irradiation energy density can be improved, the technical indexes of a light source can be properly reduced, the diversification of a supply chain is facilitated, the electric energy is saved, and the equipment cost is lowered; the light band formed by light homogenization treatment of the light by the light modulation component enables the scanning reflecting mirror to reciprocate along the direction parallel to the working surface, or the spherical mirror is used as the scanning reflecting mirror, so that the whole working surface can be scanned, the total irradiation energy received by different areas of the working surface is relatively more uniform, and the queuing effect can be reduced or homogenized.
The optical illumination device as described above, the light modulation component includes a parallel light modulator and a light intensity homogenizing modulator, and the parallel light modulator is close to the line light source relative to the light intensity homogenizing modulator.
In the optical illumination device, the parallel light modulator and the light intensity homogenizing modulator are integrated optical components, or the parallel light modulator and the light intensity homogenizing modulator are relatively independent optical components.
The optical lighting device as described above, wherein the position of the scanning mirror is adjustable to change the incident angle of the light irradiated to the scanning mirror; and/or the positions of the line light source and the light modulation component are adjustable to change the exit direction of the light band.
In the optical illumination device as described above, the optical tape modulated by the light modulation section is directly irradiated to the scanning mirror.
The optical illumination device as described above, further comprising at least one relay mirror, the optical tape modulated by the light modulation member being reflected to the scanning mirror via the relay mirror.
As described above, in the optical illumination device, the position of the relay reflector is adjustable to change the incident angle of the light irradiated to the relay reflector.
The optical lighting device is provided with a condenser at the linear light source.
The optical lighting device as described above, wherein the set length of the light strip is greater than or equal to a maximum dimension of the processing member.
In the optical illumination device, at least one of the reflectors of the optical illumination device is a reflector module, the reflector module includes a plurality of reflector units arranged in an array, and the reflector units can rotate independently to change the incident angle of the light irradiated to the reflector units.
The invention also provides optical modification equipment which comprises at least one reaction cavity, wherein a tray for placing a processing piece is arranged in the reaction cavity, each reaction cavity is provided with at least one optical lighting device, and the optical lighting device is any one of the optical lighting devices.
Since the optical illumination device has the technical effects, the optical modification equipment comprising the optical illumination device also has the same technical effects, and the discussion is not repeated here.
The optical modification equipment further comprises a light shield, a lampshade and a reflux device, wherein the linear light source of the optical lighting device is arranged in the lampshade, and the rest components are arranged in the light shield; the line light source is an ultraviolet light source; the reflux unit comprises a radiator, the light shield is communicated with the radiator through a reflux pipeline, the radiator is communicated with the lampshade through a ventilation pipeline, and a fan is arranged in the ventilation pipeline.
The optical modification device comprises at least two optical illumination devices, each optical illumination device is provided with one corresponding lamp shade and one corresponding light shield, each lamp shade is provided with one ventilation pipeline with the fan, and each ventilation pipeline is communicated with the same heat radiator.
The optical modification device is provided with at least two optical illumination devices, each optical illumination device shares one lampshade, and each optical illumination device shares one light shield.
The optical modification device further comprises a light intensity sensor for monitoring the light intensity of the light reflected by the scanning mirror.
According to the optical modification equipment, at least one through hole is formed in the scanning reflecting mirror, and light irradiated to the scanning reflecting mirror can reach the light intensity sensor through the through hole.
According to the optical modification device, the scanning mirror can deflect to the monitoring position, and in the monitoring position, the light irradiated to the scanning mirror can reach the light intensity sensor.
Drawings
FIG. 1 is a schematic structural diagram of a first embodiment of an optical illumination device provided in the present invention;
FIG. 2 is a schematic structural diagram of a second embodiment of an optical illumination device provided in the present invention;
FIG. 3 is a schematic structural diagram of a third embodiment of an optical illumination device provided in the present invention;
fig. 4a to 4c show simplified structural diagrams of three types of reflective modules;
FIG. 5 is a schematic view of the structure of a first embodiment of an optical modifier apparatus according to the present invention;
FIG. 6 is a schematic diagram showing the structure of a second embodiment of the optical modifier of the invention.
Description of reference numerals:
a line light source 11, a condenser 12, a light modulation section 13, a scanning mirror 14, a relay mirror 15;
a reaction chamber 21, a tray 22, a wafer 23, a quartz window 24;
a light shield 31, a lamp cover 32, a return line 33, a ventilation line 34, a fan 35, a radiator 36, a light intensity sensor 37;
Detailed Description
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Without loss of generality, the specific structure of the optical illumination device is described below as an example of the application of the optical illumination device to the deposition film processing of a semiconductor wafer, and on this basis, the processed object of the optical illumination device is a wafer, and it can be understood that the optical illumination device can be applied to other fields with similar requirements, such as the optical modification processing of films in the LED and flat panel display industries, besides the processing of semiconductor wafer films.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a first embodiment of an optical illumination device provided in the present invention.
In this embodiment, the optical illumination device includes a line light source 11, a light modulation component 13, a scanning mirror 14 and a relay mirror 15, where the light modulation component 13 is configured to modulate light emitted from the line light source 11 into parallel light and homogenize the parallel light to form a light band with a set length, the relay mirror 15 reflects the light band modulated by the light modulation component 13 to the scanning mirror 14, and the scanning mirror 14 reflects the received light band to the working surface of the wafer 23. The dotted arrows in fig. 1 illustrate the transmission paths of the light rays.
The optical lighting device sets a light source as a linear light source 11, a light modulation component 13 is arranged on a light path, the light emitted by the linear light source 11 is modulated into parallel light by the light modulation component 13 and homogenized to form a light band with a set length, and the light band is reflected to a working surface of a wafer 23 by a relay reflector 15 and a scanning reflector 14 to realize modification treatment on the working surface; compared with a surface light source, the local irradiation energy density of the linear light source 11 is higher, and the effective utilization rate of light energy is higher, so that the technical indexes of the light source can be properly reduced, the diversification of a supply chain is facilitated, the electric energy can be saved, and the equipment cost can be reduced; the light band formed by light homogenization of the light by the light modulation component 13 can make the total irradiation energy received by different areas of the working surface relatively more uniform, thereby ensuring better uniformity of the auxiliary total energy received by the working surface of the wafer 23.
For the processing of wafers 23 in the semiconductor industry, the linear light source 11 is typically a uv lamp linear light source, although other lamp configurations for the linear light source 11 may be used if other requirements are required for the working surface of the processing member.
In practical implementation, in order to better utilize the light energy of the linear light source 11, a condenser 12 may be disposed at the linear light source 11, and the light emitted from the linear light source 11 is condensed by the condenser 12, so as to increase the irradiation energy density per unit area.
In this embodiment, the optical illumination apparatus further includes a driving unit (not shown) for driving the scanning mirror 14 to reciprocate in a set direction, which is a direction parallel to the working surface of the wafer 23.
In practical application, the wafer 23 is placed on the tray 22 of the reaction chamber 21 of the semiconductor device, and a quartz window 24 is disposed above the reaction chamber 21, so that the light reflected by the scanning mirror 14 can be scanned to the working surface of the wafer 23 through the quartz window 24.
In the orientation shown in fig. 1, the scanning mirror 14 reciprocates in the left-right direction in the figure, and the black solid arrows in the figure indicate the moving direction of the scanning mirror 14, so that any region of the working surface of the wafer 23 can receive the radiation of the light by the movement of the scanning mirror 14.
In practical application, the width of the light band modulated by the light modulation component 13 can be adjusted according to requirements, so as to adjust the local irradiation energy density and the scanning time.
This arrangement requires only movement of the scan mirror 14 for ease of implementation. The driving component may specifically adopt a form of a linear motor or a lead screw nut, and the like, as long as the driving mode of linear movement can be realized.
For relatively fast scanning, the set length of the light band modulated by the light modulation component 13 is not less than the diameter of the wafer 23, that is, the set length of the light band modulated by the light modulation component 13 is greater than or equal to the diameter of the wafer 23, so that the scanning mirror 14 only needs to move the diameter stroke range of the wafer 23 along the set direction to scan all areas of the working surface of the wafer 23. That is, in the processing of the working surface of one wafer 23, the scanning mirror 14 is only driven to move along one direction to complete the scanning of the wafer 23, and the wafer 23 does not need to move back and forth in one process. Compared with the method of rotating the illuminating head in the background technology, the method can shorten the scanning time of the working surface of the wafer 23, and reduce or homogenize the queuing effect of different areas of the working surface of the wafer 23 in combination with the improvement of the irradiation energy density per unit area. As shown in fig. 1, the scanning mirror 14 moves from the left end of the wafer 23 to the right to the position of the scanning mirror 14 ', and the dotted line of the scanning mirror 14' in the figure indicates the limit position of the movement of the scanning mirror 14.
It will be appreciated that for other shapes of processing members, the set length of the optical tape is preferably no less than the maximum dimension of the processing member.
In other embodiments, the scanning mirror 14 may be a spherical mirror, and is placed at a suitable position on the wafer 23, so that the light reflected by the spherical mirror to the working surface of the wafer 23 at least can cover the working surface of the wafer 23, and thus, no driving component is required, and the scanning mirror 14 does not need to move, thereby simplifying the structure.
Of course, in the above-mentioned embodiment where the driving component is provided to drive the scanning mirror 14 to reciprocate, the scanning mirror 14 may be in the form of a plane mirror or a spherical mirror, without limitation, and the specific form of the mirror is determined according to actual needs.
In this embodiment, the light modulation component 13 specifically includes a parallel light modulator and a light intensity homogenizing modulator, wherein the parallel light modulator is close to the line light source 11 relative to the light intensity homogenizing modulator.
Specifically, a bar-shaped parallel light modulator may be used to modulate the scattered light emitted from the line light source 11 into parallel light, and a bar-shaped light intensity homogenizing modulator may be used to homogenize the light emitted from the bar-shaped lamp and modulate the light band.
In actual installation, the parallel light modulator and the light intensity homogenizing modulator can be integrated optical components, and certainly, the parallel light modulator and the light intensity homogenizing modulator can also be two relatively independent optical components, which is determined according to requirements.
In the solution shown in fig. 1, there is only one relay mirror 15 on the optical path, that is, the light band modulated by the light modulation component 13 is reflected to the scanning mirror 14 only once, and in application, two or more relay mirrors 15 may be provided according to the actual device layout requirement, and details are not described.
In a specific scheme, in order to meet the requirements of processing wafers 23 with different sizes or debugging equipment, the position of the scanning mirror 14 is adjustable to change the incident angle of light rays irradiating the scanning mirror 14, so as to adjust the irradiation energy density reflected to the working surface of the wafer 23.
Specifically, the adjustment of the position of the scan mirror 14 may include adjusting its angular setting (such as its angle with the working surface of the wafer 23) or its vertical distance from the wafer 23, etc.
In a specific embodiment, the position of the relay mirror 15 is adjustable to change the incident angle of the light beam irradiated to the relay mirror 15, so as to adjust the incident angle of the light beam reflected to the scanning mirror 14.
Specifically, the position adjustment of the relay mirror 15 may include adjusting its angle setting, or the distance from the light modulation section 13, or the like.
In a specific embodiment, the positions of the line light source 11 and the light modulation component 13 are also adjustable to change the emitting direction of the light band, for example, the line light source 11 and the light modulation component 13 may have an angle adjustment range as a whole.
It will be appreciated that the positional adjustment of the optical components described above do not interfere with one another, and may allow one or more of them to be positionally adjustable during actual setup.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a second embodiment of an optical illumination device provided in the present invention.
Compared with the optical illumination device shown in fig. 1, the structural composition and basic architecture of the optical illumination device shown in fig. 2 are the same as those of fig. 1, and the difference between the two is that: in this embodiment, the line light source 11, the condenser 12, and the light modulation section 13 as a whole are disposed obliquely to the vertical direction, and the exit direction of the light band is oblique to the vertical direction, and in the embodiment shown in fig. 1, the line light source 11, the condenser 12, and the light modulation section 13 as a whole are disposed substantially in the vertical direction, and the exit direction of the light band is the vertical direction.
It can be understood that, in application, the positions of the line light source 11, the condenser 12 and the light modulation component 13 can be set flexibly according to the requirements of the actual device layout, and only the positions of the relay mirror 15 and the scanning mirror 14 need to be adjusted adaptively.
The arrangement of the components of the embodiment and the like can be understood by referring to the previous embodiments, and detailed description is omitted.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a third embodiment of an optical illumination device provided in the present invention.
Compared with the two embodiments, the optical illumination device shown in fig. 3 eliminates the relay mirror 15, and the light band modulated by the light modulation component 13 is directly irradiated to the scanning mirror 14, so that the device structure can be simplified, and the energy loss of the light on the light path transmission path can be reduced. The specific structural arrangement of this embodiment can also refer to the foregoing embodiments, and is not described in detail.
In practical applications, the scanning mirror 14 or the relay mirror 15 in the above embodiments may be in the form of a complete mirror, or may be in the form of a reflective module, so as to improve flexibility of irradiation energy adjustment.
The following describes a specific structure of the reflective module, and it is understood that any one or more of the reflective mirrors in the above embodiments may be in the form of a reflective module in practical arrangement.
The reflection module comprises a plurality of reflection units arranged in an array form, and each reflection unit can independently rotate to change the incident angle of light rays irradiating the reflection unit.
Referring to fig. 4a to 4c, fig. 4a to 4c are schematic diagrams illustrating structures of three reflective modules.
The plurality of reflection units 41 of the reflection module 40a shown in fig. 4a are arranged in a single-row multi-column array, that is, the plurality of reflection units 41 are aligned in a row along the x-axis direction; the plurality of reflection units 41 of the reflection module 40b shown in fig. 4b are arranged in a double-row multi-column array, that is, the plurality of reflection units 41 are arranged in two rows along the x-axis direction, the number of the reflection units 41 in each row is the same, and the reflection units 41 in each row are arranged in a one-to-one correspondence in the y-axis direction; the plurality of reflection units 41 of the reflection module 40c shown in fig. 4c are arranged in an array of three rows and multiple columns, that is, the plurality of reflection units 41 are arranged in three rows along the x-axis direction, the number of reflection units 41 in each row is the same, and the reflection units 41 in each row are positioned in one-to-one correspondence in the y-axis direction.
Fig. 4a to 4c only show three exemplary array forms of the reflection module, and it is understood that, in actual arrangement, the plurality of reflection units 41 of the reflection module may be arranged in other array forms, not limited to the one shown in the figures, for example, the reflection units 41 in two adjacent rows may be arranged in a staggered manner, and the array form also includes a circular array or an array form with other shapes.
As shown in the drawings, each reflection unit 41 can rotate independently in two directions, specifically around the y-axis direction or around the x-axis direction, and of course, each reflection unit 41 may have only one degree of freedom of rotation, and is specifically configured as required. Specifically, the rotation of each reflection unit 41 may be controlled by a microcomputer, and may be continuous rotation during rotation, or rotation of a set angle, that is, rotation from one fixed point position to another fixed point position.
Thus, by adjusting the position of each reflection unit 41 of the reflection module, the light intensity of a specific region can be adjusted, and the flexibility is higher.
Note that the x-axis and the y-axis shown in fig. 4a to 4c are for convenience of explanation, and the rotation axis of the reflection unit 41 may be in other directions if the reflection units 41 do not interfere with each other in actual installation, and the angle of the reflection surface of each reflection unit 41 may be adjusted.
In addition to the above-described optical illumination device, the present invention also provides an optical modification apparatus comprising at least one reaction chamber 21, a tray 22 for placing a processing piece 23 being provided in the reaction chamber 21, each reaction chamber being provided with at least one of the aforementioned optical illumination devices.
The specific structure of the optical modification apparatus is still exemplified by the process of depositing a thin film applied to a wafer of a semiconductor device.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a first embodiment of an optical modifying apparatus provided in the present invention.
In this embodiment, the optical modification apparatus is provided with two reaction chambers 21, and each reaction chamber 21 is provided with one optical illumination device, and in the illustration, the two optical illumination devices are symmetrically arranged relative to the center between the two reaction chambers 21, and in the orientation of the illustration, the linear light sources 11 and the related components of the two optical illumination devices are arranged near the middle region of the two reaction chambers 21.
As mentioned above, for wafer processing in the semiconductor industry, an ultraviolet lamp light source is usually used, and for this reason, the optical modification apparatus is further provided with a reflow device to cool each optical component only, so as to avoid the conversion of oxygen into ozone, that is, the ozone content is controlled by the setting of the reflow device.
In this embodiment, the optical modifying apparatus includes two light shields 31 and two light shields 32, the linear light source 11 of one optical lighting device is disposed in one light shield 32, the remaining components are disposed in one light shield 31, the linear light source 11 of the other optical lighting device is disposed in the other light shield 32, and the remaining components are disposed in the other light shield 31.
The reflow device comprises a heat sink 36, the heat sink 36 is respectively communicated with the two light shields 31 through the two reflow pipelines 33, the heat sink 36 is also respectively communicated with the two light shields 32 through the two ventilation pipelines 34, a fan 35 is arranged in each ventilation pipeline 34, and each optical component in the light shields 31 and the light shields 32 can be cooled through the fan 35. The thicker dashed solid arrows in fig. 5 indicate the flow path of the dissipating air.
The structure can avoid mutual interference between the optical lighting devices corresponding to the two reaction chambers 21, and ensure the consistency of wafer processing of each reaction chamber 21.
In contrast, the optical illumination device illustrated in fig. 5 is the optical illumination device illustrated in fig. 1, and it is understood that the optical modification apparatus may also adopt the optical illumination device illustrated in fig. 2 or fig. 3.
Referring to fig. 6, fig. 6 is a schematic structural diagram of a second embodiment of an optical modifying apparatus provided in the present invention.
In this embodiment, the optical modification apparatus also includes two reaction chambers 21, and each reaction chamber 21 is correspondingly provided with an optical illumination device, which is also illustrated by taking the optical illumination device shown in fig. 1 as an example.
The difference from the optical modifying apparatus shown in fig. 5 is that in this embodiment, two optical lighting devices share one light shield 31 and one lamp housing 32, as shown in fig. 6, two linear light sources 11 of the two optical lighting devices are disposed in one lamp housing 32, and the rest of the components of the two optical lighting devices are disposed in one light shield 31, and the light shield 31 is still communicated with a heat sink 36 through two return pipelines 33, so as to have a better heat dissipation effect. In this case, the lamp housing 32 can be connected to the heat sink 36 via a ventilation line 34 provided with a fan 35, which is more compact than the solution shown in fig. 5.
The above-mentioned fig. 5 and fig. 6 illustrate the structural arrangement of the optical modification apparatus by taking two reaction chambers 21 and corresponding optical illumination devices as examples, and in practice, the optical illumination devices can be configured according to the number of the reaction chambers 21, and the reflux device of the whole apparatus can be changed adaptively on the scheme shown in the figure.
In the optical modification apparatus of each of the above embodiments, a light intensity sensor 37 may be further disposed to monitor the light intensity of the light reflected by the scanning mirror 14 of the optical illumination device, so as to adjust the position of each optical component according to the process requirement, so as to meet the requirement in the subsequent process.
For the example shown in fig. 5 and 6, the scanning mirror 14 of each light illuminating device is provided with an optical intensity sensor 37, and specifically, the optical intensity sensor 37 may be installed on the back side of the corresponding scanning mirror 14, i.e. the side opposite to the reflecting surface of the scanning mirror 14, so as to prevent the scanning mirror 14 from affecting the normal processing of the working surface of the wafer.
In a specific scheme, at least one through hole can be formed in the scanning reflector 14, and light irradiated to the scanning reflector 14 can reach the light intensity sensor 37 through the through hole, so that real-time monitoring of light intensity can be realized in the process. It will be appreciated that the aperture of the through-hole is relatively small so as not to interfere with normal processing of the wafer work surface.
In addition, the scanning mirror 14 can be deflected to a monitoring position at the monitoring position, and the light irradiated to the scanning mirror can reach (for example, in a reflection manner) the light intensity sensor 37.
The optical illumination device and the optical modification device provided by the invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (17)
1. The optical illumination device is characterized by comprising a line light source, a light modulation component and a scanning reflecting mirror, wherein the light modulation component is used for modulating light rays emitted by the line light source into parallel light, homogenizing the parallel light rays to form a light band with a set length, and the scanning reflecting mirror is used for reflecting the light band to a working surface of a processing piece;
the scanning mirror is used for scanning a working surface, and the scanning mirror is driven to reciprocate along a set direction, wherein the set direction is parallel to the working surface; or the scanning reflecting mirror is a spherical mirror, and the light ray range reflected to the working surface by the scanning reflecting mirror at least covers the working surface.
2. The optical illumination device according to claim 1, wherein the light modulation member includes a parallel light modulator and an intensity homogenizing modulator, the parallel light modulator being close to the line light source with respect to the intensity homogenizing modulator.
3. The illumination device as claimed in claim 3, wherein the parallel light modulator and the light intensity homogenizing modulator are integrated optical components or are relatively independent optical components.
4. The optical illumination device as claimed in claim 1, wherein the position of the scanning mirror is adjustable to change an incident angle of the light irradiated to the scanning mirror; and/or the positions of the line light source and the light modulation component are adjustable to change the exit direction of the light band.
5. The optical illumination device of claim 1 wherein the band of light modulated by the light modulation component is directed to the scanning mirror.
6. The optical illumination device of claim 1 further comprising at least one relay mirror, the optical band modulated by the light modulation component being reflected by the relay mirror to the scanning mirror.
7. The optical illumination device as claimed in claim 6, wherein the position of the relay reflector is adjustable to change the incident angle of the light irradiated to the relay reflector.
8. The optical illumination device as claimed in claim 1, wherein a condenser is disposed at the linear light source.
9. An optical lighting device as claimed in any one of claims 1 to 8 wherein said set length of said light strip is greater than or equal to the maximum dimension of said handling member.
10. An optical lighting device as claimed in any one of claims 1 to 8, wherein at least one of the reflectors of the optical lighting device is a reflector module, and the reflector module comprises a plurality of reflector units arranged in an array, and the reflector units can rotate independently to change the incident angle of the light irradiated to the reflector units.
11. Optical modification apparatus, comprising at least one reaction chamber, wherein a tray for placing processing pieces is arranged in the reaction chamber, and each reaction chamber is provided with at least one optical illumination device, characterized in that the optical illumination device is the optical illumination device according to any one of claims 1 to 10.
12. The optical modification apparatus of claim 11, further comprising a light shield, a lamp housing, and a reflow device, wherein the line light source of the optical illumination device is disposed in the lamp housing, and the remaining components are disposed in the light shield; the line light source is an ultraviolet light source; the reflux unit comprises a radiator, the light shield is communicated with the radiator through a reflux pipeline, the radiator is communicated with the lampshade through a ventilation pipeline, and a fan is arranged in the ventilation pipeline.
13. The apparatus of claim 12, wherein there are at least two of the optical illumination devices, each of the optical illumination devices has a corresponding one of the lamp covers and one of the light shields, each lamp cover has a corresponding one of the ventilation pipes with the fan, and each of the ventilation pipes communicates with the same one of the heat sinks.
14. The optical modification apparatus of claim 12, wherein there are at least two of the optical illumination devices, each of the optical illumination devices shares one of the lamp covers, and each of the optical illumination devices shares one of the light shields.
15. The optical modifying apparatus of any one of claims 11 to 14 further including a light intensity sensor for monitoring the light intensity of light reflected from the scanning mirror.
16. The apparatus of claim 15, wherein the scanning mirror has at least one through hole, and the light beam irradiated to the scanning mirror can reach the light intensity sensor through the through hole.
17. The optical modification apparatus of claim 15, wherein the scanning mirror is deflectable to a monitoring position in which light impinging on the scanning mirror can reach the light intensity sensor.
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