CN210602767U - High-temperature melting device for secondary silicon material - Google Patents
High-temperature melting device for secondary silicon material Download PDFInfo
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- CN210602767U CN210602767U CN201921108574.5U CN201921108574U CN210602767U CN 210602767 U CN210602767 U CN 210602767U CN 201921108574 U CN201921108574 U CN 201921108574U CN 210602767 U CN210602767 U CN 210602767U
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Abstract
The utility model discloses a can realize the continuous melting edulcoration of secondary silicon material, improve the high temperature melting device of the secondary silicon material of edulcoration efficiency. The high-temperature melting device for the secondary silicon material comprises a base and a melting furnace body arranged on the base; the melting furnace body is provided with an inner cavity, and a partition plate is arranged in the inner cavity; the inner cavity is divided into an upper melting cavity and a lower filtering cavity by the partition board; a melting device and a molten liquid precipitation tank are arranged in the melting cavity; a metal solution filtering device is arranged in the filtering cavity; a slag former adding device is arranged on one side of the melting cavity; the top of the melting cavity is provided with a silicon material adding device and an inert gas supply device; an air outlet pipe is arranged at the bottom of the filtering cavity; air holes are formed in the partition plate. By adopting the high-temperature melting device for the secondary silicon material, intermittent continuous impurity removal of the silicon material can be realized, the efficiency can be improved, and the cost can be reduced.
Description
Technical Field
The utility model relates to a recycle of abandonment silicon material, especially a high temperature melting device of secondary silicon material.
Background
It is well known that: when the waste silicon material is recycled, impurities on the silicon material need to be removed. Therefore, a plurality of processes are required to recycle the waste silicon material. In the prior art, methods such as sand blasting, froth flotation, centrifugal separation, high-temperature melt filtration and the like are adopted to remove impurities such as silicon carbide, silicon nitride or graphite in silicon materials, but the methods have high operation cost and are not easy to carry out batch production, and because the impurities of the silicon materials obtained by treatment are not thoroughly removed, the silicon materials are generally difficult to be directly reused as raw materials of polysilicon ingots, so that great waste is caused.
After the silicon material is cleaned, although a part of impurities can be removed, some oxides still exist in the secondary silicon material; the oxide is not easy to be removed by acid washing and ultrasonic cleaning. Further removal of silicon feedstock impurities is therefore often achieved by high temperature melt filtration. The existing high-temperature melting filtering device can not realize continuous impurity removal of silicon materials.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a high temperature melting device of secondary silicon material that can realize the continuous melting edulcoration of secondary silicon material improves edulcoration efficiency is provided.
The utility model provides a technical scheme that its technical problem adopted is: the high-temperature melting device for the secondary silicon material comprises a base and a melting furnace body arranged on the base;
the melting furnace body is provided with an inner cavity, and a partition plate is arranged in the inner cavity; the inner cavity is divided into an upper melting cavity and a lower filtering cavity by the partition board;
a melting device and a molten liquid precipitation tank are arranged in the melting cavity; a metal solution filtering device is arranged in the filtering cavity;
the melting device comprises a heat-insulating shell; a crucible is arranged in the heat-insulating shell; a resistance heating device and a zircon layer are sequentially arranged between the inner wall of the heat-insulating shell and the crucible;
a power supply device of a resistance heating device is arranged on the outer side of the heat-insulating shell; pull rods are arranged on two sides of the heat-insulating shell; one end of the pull rod is connected with the top of the inner cavity of the melting furnace body, and the other end of the pull rod is hinged with the middle position of the heat-insulating shell; a rotation driving device for driving the heat preservation shell to rotate is arranged on the pull rod; a liquid outlet nozzle is arranged on one side of the crucible; the liquid outlet nozzle extends out of the heat preservation shell;
the molten liquid precipitation tank is positioned below a liquid outlet nozzle of the melting device; a liquid outlet pipe is arranged at the bottom of the molten liquid settling tank, and a first electromagnetic valve is arranged on the liquid outlet pipe; the liquid outlet pipe penetrates through the partition plate and is positioned above the metal solution filtering device;
a second liquid outlet pipe is arranged at the bottom of the metal solution filtering device; the second liquid outlet pipe penetrates through the bottom of the melting furnace body;
a slag former adding device is arranged on one side of the melting cavity; the top of the melting cavity is provided with a silicon material adding device and an inert gas supply device; an air outlet pipe is arranged at the bottom of the filtering cavity; air holes are formed in the partition plate.
Further, the metal solution filtering device comprises a filtering tank and a filtering net; a socket is arranged on one side of the filtering tank, and a supporting plate sliding with the socket is arranged in the filtering tank; the filter screen penetrates through the melting furnace body and the insertion opening in sequence to be inserted into the inner filter tank, and the inner cavity of the filter tank 10 is divided into an upper liquid inlet cavity and a lower liquid outlet cavity.
Furthermore, a heat insulation layer is arranged on the inner wall of the melting furnace body.
Further, a second resistance heating device is arranged outside the molten liquid precipitation tank.
The utility model has the advantages that: the high-temperature melting device for the secondary silicon material is provided with the melting device which can be turned over, so that the silicon material is conveniently added and the melted silicon material is conveniently led out; secondly, as the fused deposition tank is arranged, the slag-forming agent is added at the fused deposition tank, so that the cobs in the silicon material can form slag-impurity deposition; then the impurity slag is filtered by arranging a metal solution filtering device, so that the impurity removal of the silicon material is realized.
High temperature melting device of secondary silicon material can realize silicon material intermittent type nature's continuous edulcoration, can raise the efficiency simultaneously, reduce cost.
Drawings
FIG. 1 is a perspective view of a high-temperature melting apparatus for a secondary silicon material in an embodiment of the present invention;
FIG. 2 is a plan view of a high-temperature melting apparatus for a secondary silicon material according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view A-A of FIG. 2;
FIG. 4 is a schematic structural diagram of a drawing-out screen of a high-temperature melting device for secondary silicon materials in an embodiment of the present invention;
FIG. 5 is a partial enlarged view of B in FIG. 2;
fig. 6 is a perspective view of a melting device in an embodiment of the present invention.
Detailed Description
The present invention will be further explained with reference to the drawings and examples.
As shown in fig. 1 to 6, the high-temperature melting apparatus for secondary silicon material of the present invention comprises a base 1 and a melting furnace body 2 installed on the base 1;
the melting furnace body 2 is provided with an inner cavity, and a partition plate 9 is arranged in the inner cavity; the inner cavity is divided into an upper melting cavity and a lower filtering cavity by the partition plate 9;
a melting device 7 and a molten liquid precipitation tank 8 are arranged in the melting cavity; a metal solution filtering device is arranged in the filtering cavity;
the melting device 7 comprises a heat-insulating shell 71; a crucible 72 is arranged in the heat-insulating shell 71; a resistance heating device 78 and a zircon layer 77 are sequentially arranged between the inner wall of the heat-insulating shell 71 and the crucible 72;
a power supply device 74 of a resistance heating device 78 is arranged on the outer side of the heat preservation shell 71; pull rods 75 are arranged on two sides of the heat-insulating shell 71; one end of the pull rod 75 is connected with the top of the inner cavity of the melting furnace body 2, and the other end of the pull rod is hinged with the middle position of the heat-insulating shell 71; the pull rod 75 is provided with a rotation driving device 76 for driving the heat preservation shell 71 to rotate; a liquid outlet nozzle 73 is arranged on one side of the crucible 72; the liquid outlet 73 extends out of the heat preservation shell 71;
the molten liquid precipitation tank 8 is positioned below the liquid outlet nozzle 73 of the melting device 7; a liquid outlet pipe is arranged at the bottom of the molten liquid precipitation tank 8, and a first electromagnetic valve 81 is arranged on the liquid outlet pipe; the liquid outlet pipe penetrates through the partition plate 9 and is positioned above the metal solution filtering device;
a second liquid outlet pipe 12 is arranged at the bottom of the metal solution filtering device; the second liquid outlet pipe penetrates through the bottom of the melting furnace body 2;
a slag former adding device 5 is arranged on one side of the melting cavity; the top of the melting cavity is provided with a silicon material adding device 3 and an inert gas supply device 4; an air outlet pipe 11 is arranged at the bottom of the filtering cavity; the partition board 9 is provided with an air hole 91. The melting furnace body 2 is further provided with a vacuum extractor, which is not shown in the attached drawings.
In the working process, firstly, a silicon material is added into the melting device 7 through the silicon material adding device 3, and then the inner cavity of the melting furnace body 2 is vacuumized through the vacuumizing device; then introducing protective gas into the furnace through an inert gas supply device 4;
melting the silicon material by the melting device 7, starting the rotation driving device 76 after the silicon material is melted to rotate the heat insulation shell 71, so that the molten silicon material is poured out of the crucible 72 and flows into the molten liquid precipitation tank 8, and then adding a slagging agent into the molten liquid precipitation tank 8 by the slagging agent adding device 5; after the molten silicon material is allowed to stand in the molten liquid precipitation tank 8 for a certain period of time, the electromagnetic valve 81 is opened to allow the molten silicon material to flow into the molten metal filter for filtration, thereby realizing the molten filtration of the silicon material.
In summary, the high-temperature melting device for the secondary silicon material of the utility model is provided with the melting device 7 which can be turned over, so that the silicon material can be conveniently added and the melted silicon material can be conveniently led out; secondly, as the fused deposition tank is arranged, the slag-forming agent is added at the fused deposition tank, so that the cobs in the silicon material can form slag-impurity deposition; then the impurity slag is filtered by arranging a metal solution filtering device, so that the impurity removal of the silicon material is realized.
High temperature melting device of secondary silicon material can realize silicon material intermittent type nature's continuous edulcoration, can raise the efficiency simultaneously, reduce cost.
In order to clean filtered impurities conveniently, the metal solution filtering device comprises a filtering tank 10 and a filtering net 6; a socket is arranged on one side of the filtering tank 10, and a sliding support plate 13 is arranged in the filtering tank 10 and matched with the socket; the filter screen 6 sequentially penetrates through the melting furnace body 2 and the socket to be inserted into the inner filter tank 10, and the inner cavity of the filter tank 10 is divided into an upper liquid inlet cavity and a lower liquid outlet cavity.
In order to avoid the solidification of the molten silicon material due to temperature reduction after leaving the melting device, an insulating layer is further arranged on the inner wall of the melting furnace body 2.
In order to prevent the molten silicon material from solidifying in the melt precipitation tank 8, a second resistance heating device is further provided outside the melt precipitation tank 8.
Claims (4)
1. The high-temperature melting device for the secondary silicon material is characterized in that: comprises a base (1) and a melting furnace body (2) arranged on the base (1);
the melting furnace body (2) is provided with an inner cavity, and a partition plate (9) is arranged in the inner cavity; the inner cavity is divided into an upper melting cavity and a lower filtering cavity by the partition plate (9);
a melting device (7) and a molten liquid precipitation tank (8) are arranged in the melting cavity; a metal solution filtering device is arranged in the filtering cavity;
the melting device (7) comprises a heat-insulating shell (71); a crucible (72) is arranged in the heat-insulating shell (71); a resistance heating device (78) and a zircon layer (77) are sequentially arranged between the inner wall of the heat-insulating shell (71) and the crucible (72);
a power supply device (74) of a resistance heating device (78) is arranged on the outer side of the heat-insulating shell (71); pull rods (75) are arranged on two sides of the heat-insulating shell (71); one end of the pull rod (75) is connected with the top of the inner cavity of the melting furnace body (2), and the other end of the pull rod is hinged with the middle position of the heat-insulating shell (71); a rotary driving device (76) for driving the heat preservation shell (71) to rotate is arranged on the pull rod (75); a liquid outlet nozzle (73) is arranged on one side of the crucible (72); the liquid outlet nozzle (73) extends out of the heat-preservation shell (71);
the melt precipitation tank (8) is positioned below a liquid outlet nozzle (73) of the melting device (7); a liquid outlet pipe is arranged at the bottom of the molten liquid precipitation tank (8), and a first electromagnetic valve (81) is arranged on the liquid outlet pipe; the liquid outlet pipe penetrates through the partition plate (9) and is positioned above the metal solution filtering device;
a second liquid outlet pipe (12) is arranged at the bottom of the metal solution filtering device; the second liquid outlet pipe penetrates through the bottom of the melting furnace body (2);
a slag former adding device (5) is arranged on one side of the melting cavity; a silicon material adding device (3) and an inert gas supply device (4) are arranged at the top of the melting cavity; an air outlet pipe (11) is arranged at the bottom of the filtering cavity; and the clapboard (9) is provided with air holes (91).
2. The apparatus for melting a secondary silicon material at a high temperature according to claim 1, wherein: the metal solution filtering device comprises a filtering tank (10) and a filtering net (6); a socket is arranged on one side of the filtering tank (10), and a supporting plate (13) sliding with the socket is arranged in the filtering tank (10); the filter screen (6) sequentially penetrates through the melting furnace body (2) and the socket to be inserted into the inner filter tank (10), and the inner cavity of the filter tank 10 is divided into a liquid inlet cavity at the upper part and a liquid outlet cavity at the lower part.
3. The apparatus for melting a secondary silicon material at a high temperature according to claim 2, wherein: and a heat insulation layer is arranged on the inner wall of the melting furnace body (2).
4. The apparatus for melting a secondary silicon material at a high temperature according to claim 2, wherein: and a second resistance heating device is arranged on the outer side of the molten liquid precipitation tank (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921108574.5U CN210602767U (en) | 2019-07-15 | 2019-07-15 | High-temperature melting device for secondary silicon material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921108574.5U CN210602767U (en) | 2019-07-15 | 2019-07-15 | High-temperature melting device for secondary silicon material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210602767U true CN210602767U (en) | 2020-05-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921108574.5U Active CN210602767U (en) | 2019-07-15 | 2019-07-15 | High-temperature melting device for secondary silicon material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210602767U (en) |
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2019
- 2019-07-15 CN CN201921108574.5U patent/CN210602767U/en active Active
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