CN210571073U - CVD diamond material thermocouple device - Google Patents
CVD diamond material thermocouple device Download PDFInfo
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- CN210571073U CN210571073U CN201921798674.5U CN201921798674U CN210571073U CN 210571073 U CN210571073 U CN 210571073U CN 201921798674 U CN201921798674 U CN 201921798674U CN 210571073 U CN210571073 U CN 210571073U
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- cvd diamond
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Abstract
The utility model discloses a CVD diamond material thermocouple device, prevent scalding the board including probe, wire and insulation, the probe is located on the insulating board of preventing scalding, the wire is connected in the probe, the probe includes casing and temperature measurement electrode, temperature measurement electrode includes nitrogen doping CVD diamond single crystal piece, phosphorus doping CVD diamond single crystal piece, metal paster electrode and phosphorus-silicon semiconductor film, locate in the casing on the phosphorus doping CVD diamond single crystal piece, nitrogen doping CVD diamond single crystal piece is located on the phosphorus doping CVD diamond single crystal piece, phosphorus-silicon semiconductor film is located between nitrogen doping CVD diamond single crystal piece and the phosphorus doping CVD diamond single crystal piece. The utility model belongs to the technical field of temperature measurement, specifically indicate a CVD diamond material thermocouple device of small, dynamic range is big, the precision is high, the noise proof.
Description
Technical Field
The utility model belongs to the technical field of temperature measurement, specifically indicate a CVD diamond material thermocouple device.
Background
In industrial processes, temperature is one of the important parameters that needs to be measured and controlled. In temperature measurement, the thermocouple is widely applied, and has the advantages of simple structure, convenient manufacture, wide measurement range, high precision, small inertia, convenient remote transmission of output signals and the like.
SUMMERY OF THE UTILITY MODEL
In order to solve the problem, the utility model provides a CVD diamond material thermocouple device with simple structure, small volume and large dynamic range.
In order to realize the above functions, the utility model discloses the technical scheme who takes as follows: a CVD diamond material thermocouple device comprises a probe, a lead and an insulating anti-scalding plate, wherein the probe is arranged on the insulating anti-scalding plate, the lead is connected onto the probe, the probe comprises a shell and a temperature measuring electrode, the shell is arranged on the insulating anti-scalding plate, the temperature measuring electrode is arranged in the shell, the temperature measuring electrode comprises a nitrogen-doped CVD diamond single crystal wafer, a phosphorus-doped CVD diamond single crystal wafer, a metal patch electrode and a phosphorus-silicon semiconductor thin film, the phosphorus-doped CVD diamond single crystal wafer is arranged in the shell, the nitrogen-doped CVD diamond single crystal wafer is arranged on the phosphorus-doped CVD diamond single crystal wafer, the phosphorus-silicon semiconductor thin film is arranged between the nitrogen-doped CVD diamond single crystal wafer and the phosphorus-doped CVD diamond single crystal wafer, the conductivity drops and rises at high temperature to accelerate the passing of electrons and improve the measurement sensitivity, the metal patch electrode is arranged on the outer sides of the nitrogen-doped CVD diamond single crystal wafer, the conducting wire is arranged on the metal patch electrode.
Further, the phosphorus-doped CVD diamond single crystal wafer has the size of 1.2 x 0.8 x 0.35mm3The size of the nitrogen-doped CVD diamond single crystal wafer is 1.2 x 0.8 x 0.35mm3。
Further, the phosphorus-silicon semiconductor thin film is 10 μm thick.
Furthermore, a temperature measuring electrode placing groove is arranged in the shell, and a high-temperature-resistant heat-insulating sleeve is arranged between the temperature measuring electrode placing groove and the inner wall part of the shell.
Further, the nitrogen doping amount in the nitrogen-doped CVD diamond single crystal wafer is 100ppb, and the phosphorus doping amount in the phosphorus-doped CVD diamond single crystal wafer is 100 ppb.
Furthermore, the metal patch electrode is a metal film deposited by adopting an electron beam evaporation coating method.
Furthermore, the metal patch electrode is made of gold, and the thickness of the metal patch electrode is 100 nm.
Furthermore, the lead is connected to the metal patch electrode, the length of the lead is 3cm, and a sheath is coaxially arranged at the position where the length of the lead is more than or equal to 0.5cm, so that the anti-interference and lead protection effects are achieved.
The utility model adopts the above structure gain beneficial effect as follows: the utility model provides a pair of CVD diamond material thermocouple device constitutes the temperature measurement electrode through using the CVD diamond single crystal wafer of doping nitrogen and phosphorus element respectively, strengthens electron transmission rate through using phosphorus-silicon semiconductor film and realizes quick response, improves temperature measurement sensitivity and structure comparatively simple, has small, dynamic range is wide, the precision is high and the advantage of anti-noise.
Drawings
Fig. 1 is a schematic view of the overall structure of a thermocouple device of CVD diamond material according to the present invention;
FIG. 2 is a schematic view of the structure of a temperature measuring electrode of a thermocouple device made of CVD diamond material according to the present invention;
fig. 3 is a schematic structural view of a housing of a CVD diamond material thermocouple device according to the present invention.
The device comprises a probe 1, a probe 2, a lead 3, an insulating anti-scalding plate 4, a shell 5, a temperature measuring electrode 6, a nitrogen-doped CVD diamond single crystal wafer 7, a phosphorus-doped CVD diamond single crystal wafer 8, a metal patch electrode 9, a phosphorus-silicon semiconductor film 10, a temperature measuring electrode placing groove 11, a high-temperature resistant heat-insulating sleeve 12 and a wrapping.
Detailed Description
The technical solution of the present invention will be described in further detail with reference to the following embodiments, and the technical features or the connection relations of the present invention, which are not described in detail, are the prior art adopted.
The present invention will be described in further detail with reference to the accompanying drawings.
A CVD diamond material thermocouple device comprises a probe 1, a lead 2 and an insulating anti-scalding plate 3, wherein the probe 1 is arranged on the insulating anti-scalding plate 3, the lead 2 is connected to the probe 1, the probe 1 comprises a shell 4 and a temperature measuring electrode 5, the shell 4 is arranged on the insulating anti-scalding plate 3, the temperature measuring electrode 5 is arranged in the shell 4, the temperature measuring electrode 5 comprises a nitrogen-doped CVD diamond single crystal wafer 6, a phosphorus-doped CVD diamond single crystal wafer 7, a metal patch electrode 8 and a phosphorus-silicon semiconductor film 9, the phosphorus-doped CVD diamond single crystal wafer 7 is arranged in the shell 4, the nitrogen-doped CVD diamond single crystal wafer 6 is arranged on the phosphorus-doped CVD diamond single crystal wafer 7, the phosphorus-silicon semiconductor film 9 is arranged between the nitrogen-doped CVD diamond single crystal wafer 6 and the phosphorus-doped CVD diamond single crystal wafer 7, the metal patch electrode 8 is wrapped on the outer sides of the nitrogen-doped CVD diamond single crystal wafer 6 and the phosphorus-doped CVD diamond single crystal wafer 7, the lead 2 is arranged on the metal patch electrode 8.
The phosphorus-doped CVD diamond single crystal wafer 7 has a size of 1.2 x 0.8 x 0.35mm3The size of the nitrogen-doped CVD diamond single crystal wafer 6 is 1.2 x 0.8 x 0.35mm3。
The phosphorus-silicon semiconductor thin film 9 is 10 μm thick.
A temperature measuring electrode placing groove 10 is arranged in the shell 4, and a high-temperature-resistant heat-insulating sleeve 11 is arranged between the temperature measuring electrode placing groove 10 and the inner wall of the shell 4.
The nitrogen doping amount in the nitrogen-doped CVD diamond single crystal wafer 6 is 100ppb, and the phosphorus doping amount in the phosphorus-doped CVD diamond single crystal wafer 7 is 100 ppb.
The metal patch electrode 8 is a metal film deposited by an electron beam evaporation coating method.
The metal patch electrode 8 is made of gold, and the thickness of the metal patch electrode 8 is 100 nm.
The lead 2 is connected to the metal patch electrode 8, the length of the lead 2 is 3cm, and a sheath 12 is coaxially arranged at the position where the length of the lead 2 is more than or equal to 0.5 cm.
When the thermocouple is used, the lead 2 is electrically connected to the display instrument, the probe 1 is contacted with an object to be measured, the temperatures of two junctions of the nitrogen-doped CVD diamond single crystal wafer 6 and the phosphorus-doped CVD diamond single crystal wafer 7 are different, electromotive force is generated in a loop, after the material components of two thermocouple wires of the thermocouple are determined, the magnitude of thermoelectric force of the thermocouple is only related to the temperature difference of the thermocouple, and the display instrument connected through the lead 2 can display the measured temperature.
The present invention and the embodiments thereof have been described above, but the description is not limited thereto, and the embodiment shown in the drawings is only one of the embodiments of the present invention, and the actual structure is not limited thereto. In summary, those skilled in the art should understand that they should not be limited to the embodiments described above, and that they can design the similar structure and embodiments without departing from the spirit of the invention.
Claims (8)
1. A CVD diamond material thermocouple device, characterized by: comprises a probe, a lead and an insulating anti-ironing plate, wherein the probe is arranged on the insulating anti-ironing plate, the lead is connected to the probe, the probe comprises a shell and a temperature measuring electrode, the shell is arranged on the insulating anti-ironing plate, the temperature measuring electrode is arranged in the shell, the temperature measuring electrode comprises a nitrogen-doped CVD diamond single crystal wafer, a phosphorus-doped CVD diamond single crystal wafer, a metal patch electrode and a phosphorus-silicon semiconductor film, the phosphorus-doped CVD diamond single crystal wafer is arranged in the shell, the nitrogen-doped CVD diamond single crystal wafer is arranged on the phosphorus-doped CVD diamond single crystal wafer, the phosphorus-silicon semiconductor film is arranged between the nitrogen-doped CVD diamond single crystal wafer and the phosphorus-doped CVD diamond single crystal wafer, the metal patch electrode is wrapped on the outer sides of the nitrogen-doped CVD diamond single crystal wafer and the phosphorus-doped CVD diamond single crystal wafer, and the lead is arranged on the metal patch electrode.
2. A CVD diamond material thermocouple device according to claim 1, wherein: the size of the phosphorus-doped CVD diamond single crystal wafer is 1.2 x 0.8 x 0.35mm3The size of the nitrogen-doped CVD diamond single crystal wafer is 1.2 x 0.8 x 0.35mm3。
3. A CVD diamond material thermocouple device according to claim 1, wherein: the phosphorus-silicon semiconductor thin film is 10 μm thick.
4. A CVD diamond material thermocouple device according to claim 1, wherein: the shell is internally provided with a temperature measuring electrode placing groove, and the temperature measuring electrode placing groove and the inner wall part of the shell are provided with high-temperature-resistant heat-insulating sleeves.
5. A CVD diamond material thermocouple device according to claim 1, wherein: the nitrogen doping amount in the nitrogen-doped CVD diamond single crystal wafer is 100ppb, and the phosphorus doping amount in the phosphorus-doped CVD diamond single crystal wafer is 100 ppb.
6. A CVD diamond material thermocouple device according to claim 1, wherein: the metal patch electrode is a metal film deposited by adopting an electron beam evaporation coating method.
7. A CVD diamond material thermocouple device according to claim 1, wherein: the metal patch electrode is made of gold, and the thickness of the metal patch electrode is 100 nm.
8. A CVD diamond material thermocouple device according to claim 1, wherein: the lead is connected to the metal patch electrode, the length of the lead is 3cm, and a wrapping is coaxially arranged at the position where the length of the lead is more than or equal to 0.5 cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921798674.5U CN210571073U (en) | 2019-10-24 | 2019-10-24 | CVD diamond material thermocouple device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921798674.5U CN210571073U (en) | 2019-10-24 | 2019-10-24 | CVD diamond material thermocouple device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210571073U true CN210571073U (en) | 2020-05-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921798674.5U Active CN210571073U (en) | 2019-10-24 | 2019-10-24 | CVD diamond material thermocouple device |
Country Status (1)
| Country | Link |
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| CN (1) | CN210571073U (en) |
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2019
- 2019-10-24 CN CN201921798674.5U patent/CN210571073U/en active Active
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