CN210490746U

CN210490746U - H-bridge inverter circuit

Info

Publication number: CN210490746U
Application number: CN201921457384.4U
Authority: CN
Inventors: 孙厚勋; 汪小波; 李森岗
Original assignee: Shanghai Shengsu Electronic Technology Co ltd
Current assignee: Shanghai Shengsu Electronic Technology Co ltd
Priority date: 2019-09-04
Filing date: 2019-09-04
Publication date: 2020-05-08
Anticipated expiration: 2029-09-04

Abstract

The utility model discloses a H bridge inverter circuit, including field effect transistor HJMOS1, field effect transistor HJMOS2, field effect transistor HJMOS3, field effect transistor HJMOS4, resistance HR1, resistance HR2, resistance HR3 and resistance HR4, first way sine wave signal is connected to resistance HR 1's one end, resistance HR 1's other end connecting resistance R4, diode Z2 and field effect transistor HJMOS 1's grid, and diode Z1's positive pole, field effect transistor HJMOS 1's source electrode, inductance L2 and ground are connected to resistance R4's the other end, the utility model discloses an adopt H bridge structure, carry out the contravariant operation to voltage to increased filtering absorption circuit in the circuit, made alternating voltage waveform quality better, and got rid of sharp thorn pulse interference.

Description

H-bridge inverter circuit

Technical Field

The utility model relates to an inverter circuit technical field specifically is a H bridge inverter circuit.

Background

The inverter circuit is corresponding to a Rectifier circuit (Rectifier), and converting direct current into alternating current is called inversion. When the alternating current side is connected to a power grid, namely the alternating current side is connected with a power supply, the active inversion is called; when the ac side is directly linked to the load, it is called passive inversion.

Inverter circuits are widely used. Among the various power sources, a storage battery, a dry battery, a solar battery, and the like are all dc power sources, and when these power sources are required to supply power to an ac load, an inverter circuit is required. In addition, power electronic devices such as an inverter for speed regulation of an ac motor, an uninterruptible power supply, and an induction heating power supply are widely used, and the core part of the circuit is an inverter circuit. The basic function of the DC power supply is to convert the DC power supply output by the intermediate DC circuit into an AC power supply with adjustable frequency and voltage under the control of the control circuit.

Most of the existing inverter circuits are complex in structure and inconvenient to use.

Disclosure of Invention

An object of the utility model is to provide a H bridge inverter circuit to solve the problem that proposes among the above-mentioned background art.

In order to achieve the above object, the utility model provides a following technical scheme:

an H-bridge inverter circuit comprises a field effect transistor HJMOS1, a field effect transistor HJMOS2, a field effect transistor HJMOS3, a field effect transistor HJMOS4, a resistor HR4 and a resistor HR4, wherein one end of the resistor HR4 is connected with a first path of sine wave signals, the other end of the resistor HR4 is connected with a resistor R4, a diode Z4 and the grid electrode of the field effect transistor HJMOS4, the other end of the resistor R4 is connected with the anode of the diode Z4, the source electrode of the field effect transistor HJMOS4, an inductor L4 and the ground, the cathode of the diode Z4 is connected with the cathode of the diode Z4, the drain electrode of the field effect transistor HJMOS4 is connected with a capacitor C4, the cathode of a diode D4 and the inverter power output end, one end of the resistor HR4 is connected with a second path of sine wave signals, the other end of the resistor R4, the cathode of the diode Z4 and the anode of the diode HJMOS4 are connected with the diode HJMOS4, the cathode of, the drain of the field effect transistor HJMOS3 is connected with the cathode of the diode D3 and the inductor L3, one end of the resistor HR3 is connected with the third path of sine wave signals, the other end of the resistor HR3 is connected with the resistor R3, the diode Z3 and the gate of the field effect transistor HJMOS3, the other end of the resistor R3 is connected with the anode of the diode Z3, the source of the field effect transistor HJMOS3, the inductor L3, the capacitor C3 and the ground, the cathode of the diode Z3 is connected with the cathode of the diode Z3, the drain of the field effect transistor HJMOS3 is connected with the cathode of the capacitor C3, the cathode of the diode D3 and the power supply terminal, one end of the resistor 3 is connected with the fourth path of sine wave signals, the other end of the resistor HR3 is connected with the resistor R3, the diode Z3 and the gate of the HJMOS3, the other end of the resistor R3 is connected with the anode of the diode Z3, the source of the field effect transistor HJMOS 72, the drain of the inductor L3 and the drain of the inductor L3, the drain of the capacitor, The other input end of the inductor L3 is connected with the other end of the capacitor C10, the capacitor C9 and the live wire.

As a further technical solution of the present invention: the capacitor C10, the inductor L3, the capacitor C9 and the capacitor C14 form a filter absorption circuit.

As a further technical solution of the present invention: the model of the field effect tube HJMOS1-HJMOS4 is FGH60N 60.

As a further technical solution of the present invention: the output voltage of the output end of the inverter power supply is + 300V.

As a further technical solution of the present invention: the diodes Z1-Z8 are all zener diodes.

Compared with the prior art, the utility model has the advantages of it is following: the utility model discloses an adopt H bridge structure, carry out the contravariant operation to voltage to increased filtering absorption circuit in the circuit, it is that alternating voltage waveform quality is better, and get rid of spine impulse interference.

Drawings

Fig. 1 is a circuit diagram of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Example 1: referring to fig. 1, an H-bridge inverter circuit includes a fet HJMOS1, a fet HJMOS2, a fet HJMOS3, a fet HJMOS4, a resistor HR1, a resistor HR2, a resistor HR3, and a resistor HR3, wherein the fet HJMOS3, and peripheral components thereof form 4 arms of an H-bridge, one end of the resistor HR3 is connected to a first path of sinusoidal signal, the other end of the resistor HR3 is connected to a resistor R3, a diode Z3, and a gate of the fet HJMOS3, the other end of the resistor R3 is connected to an anode of the diode Z3, a source of the fet HJMOS3, an inductor L3, and a ground, a cathode of the diode Z3 is connected to a cathode of the diode Z3, a drain of the fet HJMOS3 is connected to a cathode of the capacitor C3, a cathode of the diode D3, a power supply output, a second path of the HR3, a second path of the resistor HR3 and a second path of the fet 3, the fet 3 and a gate of the resistor HR 36, the other end of the resistor R7 is connected with the anode of the diode Z3, the source of the field effect transistor HJMOS3 and the ground, the cathode of the diode Z4 is connected with the cathode of the diode Z3, the drain of the field effect transistor HJMOS3 is connected with the cathode of the diode D3 and the inductor L3, one end of the resistor HR3 is connected with the third path of sine wave signals, the other end of the resistor HR3 is connected with the cathode of the resistor R3, the diode Z3 and the gate of the field effect transistor HJMOS3, the other end of the resistor R3 is connected with the anode of the diode Z3, the source of the field effect transistor HJMOS3, the inductor L3, the capacitor C3 and the ground, the cathode of the diode Z3 is connected with the cathode of the diode Z3, the drain of the field effect transistor HJMOS3 is connected with the capacitor C3, the cathode of the diode D3 and the power supply terminal, one end of the resistor HR3 is connected with the fourth path of the sine wave signals, the other end of the resistor HR3 is connected with the anode of the diode R3, the, the cathode of a diode Z7 is connected with the cathode of a diode Z8, the drain of a field effect transistor HJMOS4 is connected with the cathode of a diode D6 and an inductor L4, one input end of the inductor L3 is connected with a capacitor C10, a capacitor C14 and a zero line, the other input end of the inductor L3 is connected with the other end of a capacitor C10, a capacitor C9 and a live line, the models of the field effect transistors HJMOS1-HJMOS4 are FGH60N60, the diodes Z1-Z8 are voltage stabilizing diodes, the circuit is controlled by an inverter module to perform sine wave pulse inversion operation on four bridge arms of HR1, HR2, HR3 and HR4, and finally the voltage of +300V is output at the output end of the power supply.

In embodiment 2, based on embodiment 1, the capacitor C10, the inductor L3, the capacitor C9, and the capacitor C14 form a filter absorption circuit, which can filter out noise interference, so that the ac voltage waveform quality is better.

It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.

Claims

1. An H-bridge inverter circuit comprises a field effect transistor HJMOS1, a field effect transistor HJMOS2, a field effect transistor HJMOS3, a field effect transistor HJMOS4, a resistor HR4 and a resistor HR4, and is characterized in that one end of the resistor HR4 is connected with a first path of sine wave signals, the other end of the resistor HR4 is connected with a resistor R4, a diode Z4 and the grid electrode of the field effect transistor HJMOS4, the other end of the resistor R4 is connected with the anode of the diode Z4, the source of the field effect transistor HJMOS4, an inductor L4 and the ground, the cathode of the diode Z4 is connected with the cathode of the diode Z4, the drain of the field effect transistor HJMOS4 is connected with a capacitor C4, the cathode of the diode D4 and the output end of an inverter power supply, one end of the resistor HR4 is connected with a second path of sine wave signals, the other end of the resistor HR4 is connected with the cathode of the diode R4, the cathode of the diode HJMOS4 and the anode of the diode HJMOS4, the drain of the field effect transistor HJMOS3 is connected with the cathode of the diode D3 and the inductor L3, one end of the resistor HR3 is connected with the third path of sine wave signals, the other end of the resistor HR3 is connected with the resistor R3, the diode Z3 and the gate of the field effect transistor HJMOS3, the other end of the resistor R3 is connected with the anode of the diode Z3, the source of the field effect transistor HJMOS3, the inductor L3, the capacitor C3 and the ground, the cathode of the diode Z3 is connected with the cathode of the diode Z3, the drain of the field effect transistor HJMOS3 is connected with the cathode of the capacitor C3, the cathode of the diode D3 and the power supply terminal, one end of the resistor 3 is connected with the fourth path of sine wave signals, the other end of the resistor HR3 is connected with the resistor R3, the diode Z3 and the gate of the HJMOS3, the other end of the resistor R3 is connected with the anode of the diode Z3, the source of the field effect transistor HJMOS 72, the drain of the inductor L3 and the drain of the inductor L3, the drain of the capacitor, The other input end of the inductor L3 is connected with the other end of the capacitor C10, the capacitor C9 and the live wire.

2. The H-bridge inverter circuit as claimed in claim 1, wherein the capacitor C10, the inductor L3, the capacitor C9 and the capacitor C14 form a filter absorption circuit.

3. The H-bridge inverter circuit as claimed in claim 1, wherein the field effect transistors HJMOS1-HJMOS4 are all FGH60N 60.

4. The H-bridge inverter circuit according to claim 1, wherein an output voltage of an output terminal of the inverter power supply is + 300V.

5. The H-bridge inverter circuit according to any one of claims 1 to 4, wherein the diodes Z1-Z8 are zener diodes.