CN210469842U - Low-temperature capacitive and inductive composite coupling radio frequency plasma reactor - Google Patents
Low-temperature capacitive and inductive composite coupling radio frequency plasma reactor Download PDFInfo
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- CN210469842U CN210469842U CN201920818203.XU CN201920818203U CN210469842U CN 210469842 U CN210469842 U CN 210469842U CN 201920818203 U CN201920818203 U CN 201920818203U CN 210469842 U CN210469842 U CN 210469842U
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Abstract
The utility model relates to a low-temperature capacitive and inductive composite coupling radio frequency plasma reactor, which comprises a reaction chamber, wherein the reaction chamber is provided with an air inlet end and an air outlet end; the gas inlet end is communicated with a second branch pipe for introducing reaction gas; the reaction chamber is also communicated with a first branch pipe for introducing inert gas; the air outlet end is provided with an air exhaust device; a coil is wound on the outer wall of the reaction chamber, which is relatively close to the air inlet end, the coil is connected with a radio frequency power supply A, a matcher A for adjusting impedance is also connected between the radio frequency power supply A and the coil, a metal electrode is arranged in the reaction chamber, which is relatively close to the air inlet end, the metal electrode is connected with a radio frequency power supply B, and a matcher B for adjusting impedance is connected between the radio frequency power supply B and the metal electrode; the reaction chamber is also internally provided with a sample table for placing a sample to be modified, and the sample table moves in the reaction chamber in a reciprocating manner through a position adjusting mechanism; the sample stage is conductive. The device has simple structure, low manufacturing cost and convenient operation.
Description
Technical Field
The utility model belongs to the technical field of the microelectronics processing, a plasma reactor is related to, especially relate to a low temperature capacity and perception complex coupling radio frequency plasma reactor.
Background
The plasma reactor can generate high-energy plasma and is widely applied to the fields of material surface modification, surface treatment and the like. In the field of microelectronics processing, nearly one-third of the process steps in the fabrication of very large scale integrated circuits are accomplished by plasma processing techniques such as plasma etching, plasma thin film deposition, and plasma stripping. The plasma source applied to plasma etching mainly includes a single-frequency or dual-frequency capacitively coupled plasma source (CCP), an inductively coupled plasma source (ICP), and the like. In the etching process, CCP is mainly applied to etching of SiO2 and other media due to high electron and ion energy; and the ICP is mainly applied to etching of semiconductor materials and metal materials, such as Si and Cu etching, due to the characteristic of high density and low ion energy.
The conventional RF plasma reactor generally uses one of an inductively coupled plasma source or a capacitively coupled plasma source as the plasma source, such as those disclosed in the patent application Nos. 201520949108.5 and 201520949108.5
Patent application 201410684085.X discloses a low-vacuum low-temperature radio frequency capacitive coupling plasma reactor and a low-vacuum low-temperature radio frequency inductive coupling plasma reactor respectively, but the manufacturing process for designing and processing a reactive chamber with a fixed size is tedious, the manufacturing period is long, the size is large, the instrument is heavy and the cost is too high, and at least two sets of reactive chambers are required to be designed corresponding to two processes of CCP and ICP.
In order to solve the problem, chinese patent application No. 201310521255.8 discloses a rf plasma reaction chamber, which includes an upper substrate stage and a lower substrate stage disposed in a vacuum chamber, the upper substrate stage is fixed on an upper substrate stage fixing device on a sealing cover through an upper supporting cylinder, the upper substrate stage adopts a capacitive coupling substrate stage or an inductive coupling substrate stage; the lower substrate table is fixed on the bottom plate through the lower substrate table axial position adjusting mechanism, when the adjusting nut is adjusted, the moving flange slides on the guide rod to enable the corrugated pipe to deform, the lower supporting cylinder located in the corrugated pipe moves, and the distance between the lower substrate table and the upper substrate table which are connected with the lower supporting cylinder is changed. Therefore, the plasma reactor can select the diameters, the heights and the discharge modes of different plasma generating regions according to different process requirements, can optimize the design and the manufacture of semiconductor device processing equipment, and shortens the development period of the plasma reactor required by different processes. However, there are plasma reactors in the prior art which combine two types of coupling together to generate plasma.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome the shortcoming that exists among the prior art, provide a low temperature capacity and perception complex coupling radio frequency plasma reactor, this equipment with the perception coupling plasma source with for the capacitive coupling integration to an equipment, produce plasma jointly.
In order to achieve the above object, the present invention provides the following technical solutions:
a low-temperature capacitive and inductive composite coupling radio frequency plasma reactor comprises a reaction chamber, wherein the reaction chamber is provided with an air inlet end and an air outlet end; the gas inlet end of the reaction chamber is communicated with a second branch pipe for introducing reaction gas; the reaction chamber is also communicated with a first branch pipe for introducing inert gas; the air outlet end of the reaction chamber is communicated with an air extractor; the outer wall of the reaction chamber, which is relatively close to the air inlet end, is wound with a coil, the coil is connected with a radio frequency power supply A, a matcher A for adjusting impedance is also connected between the radio frequency power supply A and the coil, a metal electrode is arranged in the reaction chamber, which is relatively close to the air inlet end, the metal electrode is connected with a radio frequency power supply B, and a matcher B for adjusting impedance is connected between the radio frequency power supply B and the metal electrode; the reaction chamber is also internally provided with a sample table for placing a sample to be modified, and the sample table moves back and forth in the reaction chamber through a position adjusting mechanism so as to be close to or far away from the metal electrode; the sample stage is conductive.
By the arrangement, the radio frequency power supply A and the radio frequency power supply B work simultaneously, and the inductively coupled plasma source and the capacitively coupled plasma source can be integrated into one device to jointly generate plasma to treat the surface of the sample. The radio frequency power supply A and the radio frequency power supply B respectively work independently and can also work as a traditional radio frequency inductive coupling plasma reactor or a radio frequency capacitive coupling plasma reactor. One device has multiple surface treatment functions, and has the advantages of simple structure, low manufacturing cost and convenient operation.
Further, the air inlet end is communicated with an air inlet main pipe; the first branch pipe and the second branch pipe are connected to a gas mixing chamber, and the gas mixing chamber is connected with the gas inlet main pipe.
So set up, rethread reaction chamber after with inert gas and reaction gas misce bene can improve the stability of discharge reaction.
Furthermore, a gas flow guiding grid is arranged in the reaction chamber and is positioned between the metal electrode and the gas inlet main pipe.
So arranged, the gas flow is uniformly distributed in the reaction chamber.
Furthermore, the needle valve and the flow meter are sequentially arranged on the first branch pipe and the second branch pipe along the air inlet direction of the first branch pipe and the second branch pipe; and display screens for displaying capacitance values are arranged on the matcher A and the matcher B.
By the arrangement, the needle valve and the flow meter are adopted to adjust and observe the air flow, and the flow speed and the flow ratio can be adjusted at any time according to the process requirements.
Furthermore, a water cooling system for cooling the coil is arranged on the coil, an insulating layer is arranged on the coil, and the water cooling system comprises a water pipe sleeved outside the coil, cooling water arranged between the water pipe and the insulating layer and a driving device for driving the cooling water to circulate.
Furthermore, the air inlet end and the air outlet end of the reaction chamber are respectively arranged at the top end and the bottom end of the reaction chamber, the openings at the upper end and the lower end of the reaction chamber are respectively sealed by a rubber plug, and one end of the air inlet main pipe penetrates through the rubber plug at the air inlet end and is communicated with the interior of the reaction chamber; the metal electrode is fixed on the rubber plug at the air inlet end through an insulating flange and is connected with a radio frequency power supply B and a matcher B which are arranged outside the reaction cavity.
Further, the air extracting device comprises an air extracting pipe and a mechanical pump connected with the air extracting pipe, and the air extracting pipe penetrates through the rubber plug at the air outlet end and is communicated with the interior of the reaction chamber; the air exhaust pipe is provided with a vacuum gauge.
Furthermore, the sample stage moves up and down in the reaction chamber through a position adjusting mechanism, the position adjusting mechanism comprises a screw cap arranged in a rubber plug at the bottom of the reaction chamber, a matched threaded rod is arranged in the screw cap, and the sample stage is arranged at the end part of the threaded rod in the reaction chamber; the sample table, the screw cap and the threaded rod are all made of conductive materials; the threaded rod is grounded.
Furthermore, the lower part of the threaded rod outside the reaction chamber is connected with a non-threaded conductive vertical rod, the conductive vertical rod is fixedly connected to a conductive sleeve through a conductive screwing nut, the conductive sleeve is arranged on a conductive base, and the conductive base is in good contact with the ground; the inner surface of the lower part of the reaction chamber is pasted with conductive thin paper which is in conductive connection with the threaded rod; the outer wall of the reaction chamber is provided with a fixing clamp, and one end of the fixing clamp is fixed on an iron support.
Thus, the position adjusting mechanism and the conductive thin paper form an electrode together.
Further, the inert gas is argon.
Compared with the existing test equipment, the utility model discloses following beneficial technological effect has: the low-temperature capacitive and inductive composite coupling radio frequency plasma reactor and the use method thereof are provided, the inductive coupling plasma source and the capacitive coupling are integrated into one device to jointly generate plasma, and the plasma reactor has the advantages of simple structure, low manufacturing cost and convenient operation.
Drawings
Fig. 1 is a schematic diagram of the overall structure of the low-temperature capacitive and inductive composite coupling rf plasma reactor according to the present invention.
Wherein, 1, a reaction chamber; 11. a rubber plug; 12. a gas flow grid; 2. an intake manifold; 21. a first branch pipe; 22. a second branch pipe; 23. a needle valve; 24. a flow meter; 25. a gas mixing chamber; 3. a coil; 31. a radio frequency power supply A; 32. a matcher A; 4. a water cooling system; 41. a water pipe; 5. a threaded rod; 51. a sample stage; 52. a sample to be modified; 53. a nut; 54. a conductive vertical bar; 55. electrically conductive screw nuts; 56. a conductive sleeve; 57. a conductive base; 58. an electrically conductive thin paper; 6. an iron stand; 61. a fixing clip; 7. an air exhaust pipe; 71. a mechanical pump; 72. a vacuum gauge; 8. a metal electrode; 81. a radio frequency power supply B; 82. a matcher B; 83. and an insulating flange.
Detailed Description
The present invention is further described with reference to the following drawings and examples, which are not intended to limit the scope of the present invention.
Example 1:
fig. 1 shows the structure of the low-temperature capacitive and inductive composite coupling rf plasma reactor according to embodiment 1 of the present invention.
As shown in fig. 1, a low-temperature capacitive and inductive compound coupling radio frequency plasma reactor comprises a reaction chamber 1, wherein the reaction chamber 1 is provided with an air inlet end and an air outlet end. The gas inlet end of the reaction chamber 1 is communicated with a second branch pipe 22 for introducing reaction gas, and the reaction chamber 1 is also communicated with a first branch pipe 21 for introducing inert gas. The air outlet end of the reaction chamber 1 is communicated with an air extractor. The coil 3 is wound on the outer wall of the reaction chamber 1 relatively close to the air inlet end, the coil 3 is connected with a radio frequency power supply A31, a matcher A32 for adjusting impedance is connected between the radio frequency power supply A31 and the coil 3, a metal electrode 8 is arranged in the reaction chamber 1 relatively close to the air inlet end, the metal electrode 8 is connected with a radio frequency power supply B81, and a matcher B82 for adjusting impedance is connected between the radio frequency power supply B81 and the metal electrode 8. The matcher a32 and the matcher B82 are provided with display screens for displaying capacitance values. The reaction chamber 1 is also internally provided with a sample table 51 for placing a sample 52 to be modified, and the sample table 51 moves back and forth in the reaction chamber 1 through a position adjusting mechanism so as to be close to or far away from the metal electrode 8; the sample stage 51 is electrically conductive and grounded.
As a preferred embodiment, in this embodiment, the reaction chamber 1 is a quartz glass tube, and the gas inlet end and the gas outlet end of the quartz glass tube are respectively disposed at the top end and the bottom end of the reaction chamber 1, that is, the quartz glass tube is vertically disposed and has an upper opening and a lower opening. The openings at the upper and lower ends of the quartz glass tube are respectively sealed by an insulating rubber plug 11.
In this embodiment, the first branch pipe 21 and the second branch pipe 22 are both connected to a gas mixing chamber 25, a gas inlet main 2 is connected to the rubber plug 11 at the gas inlet end of the quartz glass tube, the gas inlet main 2 is connected to the gas mixing chamber 25, and the inert gas and the reaction gas respectively enter the gas mixing chamber 25 from the first branch pipe 21 and the second branch pipe 22 and are uniformly mixed, and then enter the quartz glass tube through the gas inlet main 2. In further embodiments, the first branch tube 21 and the second branch tube 22 may respectively pass through the rubber stopper 11 of the gas inlet end of the silica glass tube and communicate with the inside of the silica glass tube. In further embodiments, the first branch tube 21 may also be connected to an inert gas inlet on the quartz glass tube, distinct from the gas inlet end and the gas outlet end, and communicate with the inside of the quartz glass tube.
In this embodiment, the inert gas is argon, but may be other inert gases according to the requirement. The first branch pipe 21 and the second branch pipe 22 are sequentially provided with a needle valve 23 and a flow meter 24 along the air inlet direction, and the flow rate can be adjusted and tested according to different processes. A gas guide grid 12 is arranged in the quartz glass tube between the metal electrode 8 and the gas inlet manifold 2, so that gas flow is uniformly distributed in the quartz glass tube. In an extreme embodiment, the needle valve 23 and the flow meter 24 may not be provided, and argon and the reaction gas may be introduced according to the measurement for a specific process.
In this embodiment, the air extracting device includes an air extracting tube 7 and a mechanical pump 71 connected with the air extracting tube 7, the air extracting tube 7 penetrates through the rubber plug 11 at the air outlet end and is communicated with the inside of the quartz glass tube, and a vacuum gauge 72 is arranged on the air extracting tube 7. Besides, the air extractor can also use any other structure as long as the structure can extract the air in the quartz glass tube to the required vacuum degree.
In this embodiment, a water cooling system 4 for cooling the coil 3 is disposed on the coil 3, an insulating layer is disposed on the coil 3, and the water cooling system 4 includes a water pipe 41 sleeved outside the coil 3, cooling water disposed between the water pipe 41 and the insulating layer, and a driving device for driving the cooling water to circulate. The structure of the water cooling system 4 is not limited to this, and if the water pipe 41 can be sleeved outside a single coil 3 or outside a coil 3 array formed by a plurality of coils 3, the effect of cooling the coils can be achieved.
The metal electrode 8 is fixed on a rubber plug 11 at the top end of the quartz glass tube through an insulating flange 83 and is connected with a radio frequency power supply B81 and a matcher B82 which are arranged outside the quartz glass tube.
The sample stage 51 moves up and down in the quartz glass tube through the position adjusting mechanism, the position adjusting mechanism comprises a screw cap 53 arranged in a rubber plug 11 at the bottom of the quartz glass tube, a matched threaded rod 5 is arranged in the screw cap 53, and the sample stage 51 is arranged at the end part of the threaded rod 5 in the quartz glass tube. The sample stage 51, the screw cap 53 and the threaded rod 5 are made of conductive materials, preferably, metal materials. The threaded rod 5 is connected with a threadless conductive vertical rod 54 at the lower part outside the quartz glass tube, the conductive vertical rod 54 is fixedly connected with a conductive sleeve 56 through a conductive screwing nut 55, the conductive sleeve 56 is arranged on a conductive base 57, and the conductive base 57 is in good contact with the ground. The inner surface of the lower part of the quartz glass tube is pasted with a conductive thin paper 58, the conductive thin paper 58 is in conductive connection with the threaded rod 5, and the position adjusting mechanism and the conductive thin paper 58 form an electrode together. In this embodiment, the conductive stem 54, the conductive screw nut 55, the conductive sleeve 56, the conductive base 57, and the conductive tissue 58 are made of metal material, thereby forming the other electrode. It should be noted that we do not exclude the possibility of preparing the sample stage 51, the screw cap 53, the threaded rod 5, the conductive vertical rod 54, the conductive screw cap 55, the conductive sleeve 56, the conductive base 57 and the conductive tissue 58 from other conductive materials.
In this embodiment, the quartz glass tube is fixed by an iron stand 6. Specifically, the outer wall of the quartz glass tube is provided with a fixing clamp 61, one end of the fixing clamp 61 is fixed on an iron support 6, and the height of the quartz glass tube is adjusted through the iron support 6 so as to adjust the distance between the sample support 51 and the metal electrode 8.
The above embodiments of the present invention are merely examples for clearly illustrating the present invention and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. Not all embodiments are exhaustive. All obvious changes or variations led out by the technical scheme of the utility model are still in the protection scope of the utility model.
Claims (10)
1. A low-temperature capacitive and inductive compound coupling radio frequency plasma reactor comprises a reaction chamber (1), wherein an air inlet end and an air outlet end are arranged on the reaction chamber (1); the device is characterized in that the gas inlet end of the reaction chamber (1) is communicated with a second branch pipe (22) for introducing reaction gas; the reaction chamber (1) is also communicated with a first branch pipe (21) for introducing inert gas; an air exhaust device is communicated with an air outlet end of the reaction chamber (1); the coil (3) is wound on the outer wall, which is relatively close to the air inlet end, of the reaction chamber (1), the coil (3) is connected with a radio frequency power supply A (31), a matcher A (32) for adjusting impedance is connected between the radio frequency power supply A (31) and the coil (3), a metal electrode (8) is arranged in the reaction chamber (1) relatively close to the air inlet end, the metal electrode (8) is connected with a radio frequency power supply B (81), and a matcher B (82) for adjusting impedance is connected between the radio frequency power supply B (81) and the metal electrode (8); the reaction chamber (1) is also internally provided with a sample table (51) for placing a sample (52) to be modified, and the sample table (51) moves back and forth in the reaction chamber (1) through a position adjusting mechanism so as to be close to or far away from the metal electrode (8); the sample stage (51) is electrically conductive.
2. The low temperature capacitive and inductive compound coupling radio frequency plasma reactor according to claim 1, wherein said gas inlet end is in communication with a gas inlet manifold (2); the first branch pipe (21) and the second branch pipe (22) are both connected to a gas mixing chamber (25), and the gas mixing chamber (25) is connected with the air inlet manifold (2).
3. The low-temperature capacitive and inductive compound coupling radio frequency plasma reactor according to claim 2, characterized in that a gas flow guiding grid (12) is arranged inside the reaction chamber (1), and the gas flow guiding grid (12) is located between the metal electrode (8) and the gas inlet manifold (2).
4. The low-temperature capacitive and inductive compound coupling radio frequency plasma reactor according to claim 1, wherein the first branch pipe (21) and the second branch pipe (22) are sequentially provided with a needle valve (23) and a flow meter (24) along the air inlet direction; and the matcher A (32) and the matcher B (82) are provided with display screens for displaying capacitance values.
5. The low-temperature capacitive and inductive compound coupling radio frequency plasma reactor according to claim 1, wherein a water cooling system (4) for cooling the coil (3) is disposed on the coil (3), an insulating layer is disposed on the coil (3), and the water cooling system (4) comprises a water pipe (41) sleeved outside the coil (3), cooling water disposed between the water pipe (41) and the insulating layer, and a driving device for driving the cooling water to circulate.
6. The low-temperature capacitive and inductive compound coupling radio frequency plasma reactor according to claim 2, wherein the gas inlet end and the gas outlet end of the reaction chamber (1) are respectively arranged at the top end and the bottom end of the reaction chamber (1), the openings at the upper end and the lower end of the reaction chamber (1) are respectively sealed by a rubber plug (11), and one end of the gas inlet main pipe (2) passes through the rubber plug (11) at the gas inlet end and is communicated with the interior of the reaction chamber (1); the metal electrode (8) is fixed on a rubber plug (11) of the air inlet end through an insulating flange (83) and is connected with a radio frequency power supply B (81) and a matcher B (82) which are arranged outside the reaction chamber (1).
7. The low-temperature capacitive and inductive compound coupling radio frequency plasma reactor according to claim 6, wherein the air extracting device comprises an air extracting pipe (7) and a mechanical pump (71) connected with the air extracting pipe (7), and the air extracting pipe (7) passes through a rubber plug (11) at the air outlet end and is communicated with the interior of the reaction chamber (1); and a vacuum gauge (72) is arranged on the air exhaust pipe (7).
8. The low-temperature capacitive and inductive compound coupling radio frequency plasma reactor according to claim 6, wherein the sample stage (51) moves up and down in the reaction chamber (1) through a position adjusting mechanism, the position adjusting mechanism comprises a screw cap (53) arranged in a rubber plug (11) at the bottom of the reaction chamber (1), a matched threaded rod (5) is arranged in the screw cap (53), and the sample stage (51) is arranged at the end of the threaded rod (5) in the reaction chamber (1); the sample table (51), the screw cap (53) and the threaded rod (5) are all made of conductive materials; the threaded rod (5) is grounded.
9. The low-temperature capacitive and inductive compound coupling radio frequency plasma reactor according to claim 8, wherein the threaded rod (5) is connected with a conductive vertical rod (54) without threads at the lower part outside the reaction chamber (1), the conductive vertical rod (54) is fixedly connected with a conductive sleeve (56) through a conductive screwing nut (55), the conductive sleeve (56) is installed on a conductive base (57), and the conductive base (57) is in good contact with the ground; the inner surface of the lower part of the reaction chamber (1) is pasted with conductive tissue paper (58), and the conductive tissue paper (58) is in conductive connection with the threaded rod (5); the outer wall of the reaction chamber (1) is provided with a fixing clamp (61), and one end of the fixing clamp (61) is fixed on an iron support (6).
10. The low temperature capacitively and inductively coupled rf plasma reactor of claim 1, wherein the inert gas is argon.
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| CN201920818203.XU CN210469842U (en) | 2019-05-31 | 2019-05-31 | Low-temperature capacitive and inductive composite coupling radio frequency plasma reactor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110113856A (en) * | 2019-05-31 | 2019-08-09 | 三明学院 | A kind of low temperature capacitive and perceptual compound Coupled RF Plasma reactor and its application method |
| CN111479376A (en) * | 2020-06-01 | 2020-07-31 | 深圳先进技术研究院 | Atmospheric pressure injection frequency thermal plasma generator based on preionization ignition device |
| CN117156656A (en) * | 2023-10-25 | 2023-12-01 | 西安聚能医工科技有限公司 | Movable extraction electrode for laser ablation plasma |
-
2019
- 2019-05-31 CN CN201920818203.XU patent/CN210469842U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110113856A (en) * | 2019-05-31 | 2019-08-09 | 三明学院 | A kind of low temperature capacitive and perceptual compound Coupled RF Plasma reactor and its application method |
| CN111479376A (en) * | 2020-06-01 | 2020-07-31 | 深圳先进技术研究院 | Atmospheric pressure injection frequency thermal plasma generator based on preionization ignition device |
| CN117156656A (en) * | 2023-10-25 | 2023-12-01 | 西安聚能医工科技有限公司 | Movable extraction electrode for laser ablation plasma |
| CN117156656B (en) * | 2023-10-25 | 2024-01-09 | 西安聚能医工科技有限公司 | Movable extraction electrode for laser ablation plasma |
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Granted publication date: 20200505 |