CN210403689U - Glass substrate - Google Patents

Abstract

The utility model provides a glass substrate of shape that is fit for FOWLP's manufacturing has. The glass substrate according to one embodiment of the present invention is a glass substrate for manufacturing a semiconductor package, wherein the glass substrate is a plate-like member formed in a circular shape having a diameter of 50mm to 450mm or a rectangular shape having sides of 50mm to 1000mm in a plan view, the thickness is 0.1mm to 2.0mm, and the arithmetic average roughness Ra of the surface is 0.3nm to 2.0 nm.

Description

Glass substrate

Technical Field

The utility model relates to a glass substrate.

Background

With the miniaturization of electronic devices such as mobile phones and notebook personal computers, there is an increasing demand for a technique for mounting semiconductor devices used for these electronic devices at high density. In recent years, as a technique for mounting semiconductor devices at high density, Fan Out Wafer Level Package (FOWLP) has been proposed, for example.

FOWLP is a package in which a wiring layer is formed in a large area exceeding the chip area. Therefore, FOWLP can increase the number of pins of a semiconductor chip (semiconductor element), and can protect the end portion of the semiconductor chip to prevent the semiconductor chip from being broken or the like.

In a method for manufacturing a FOWLP, a solder bump is formed on one surface of a processing substrate formed by sealing a plurality of semiconductor chips with a sealing resin. In this case, a method of using a glass plate for supporting the processing substrate is used in order to suppress warpage of the processing substrate (for example, see patent document 1).

In such a FOWLP manufacturing method, a peeling layer and an adhesive layer are laminated on a glass plate, and then a plurality of semiconductor chips are mounted on the adhesive layer. The plurality of semiconductor chips arranged on the adhesive layer are sealed with a sealing resin to form a sealed body as a processing substrate. Then, the release layer is irradiated with light such as a laser beam to reduce the adhesive strength of the release layer, and the glass plate is peeled from the sealing body to obtain a laminate of the processed substrate and the adhesive layer. After the adhesive layer is dissolved and removed, a circuit board having a wiring, a projection, and the like is formed on the surface of the processing board to which the adhesive layer is attached. Then, the laminated body and the circuit board are diced and singulated for each semiconductor chip, thereby obtaining a plurality of semiconductor devices.

Patent document 1: international laid-open publication No. 2016-088868

However, when the glass plate is peeled from the sealing body by the FOWLP manufacturing method, if the irradiation light irradiated to the peeling layer is diffusely reflected at the interface between the glass plate and the peeling layer, the peeling layer may not be sufficiently peeled. Further, if the adhesion of the release layer to the glass plate is insufficient, the glass plate may be peeled from the release layer at the time of forming the processed substrate, and the glass plate may be separated from the processed substrate.

SUMMERY OF THE UTILITY MODEL

An object of one embodiment of the present invention is to provide a glass substrate having a shape suitable for fabrication of a FOWLP.

One aspect of the glass substrate of the present invention is a glass substrate for manufacturing a semiconductor package, wherein the glass substrate is a plate-like member formed in a circular shape having a diameter of 50mm to 450mm or a rectangular shape having sides of 50mm to 1000mm in a plan view, the thickness of the plate-like member is 0.1mm to 2.0mm, and the arithmetic average roughness Ra of the surface is 0.3nm to 2.0 nm.

Preferably, the arithmetic average roughness Ra of the end face of the glass substrate is 0.01 μm to 2.0. mu.m.

Preferably, the TTV of the surface of the glass substrate is 10 μm or less.

Preferably, at least a part of the end face of the glass substrate is chamfered.

Preferably, the end face of the glass substrate is mirror-finished.

Preferably, the glass substrate has an alignment portion formed in a notch shape on an end surface of the glass substrate.

Preferably, when the glass substrate is a plate-like member formed in a circular shape in a plan view, the glass substrate has an oriented flat surface portion on an end surface of the glass substrate.

Preferably, when the glass substrate is a plate-like member formed in a rectangular shape in a plan view, the glass substrate has a cut portion formed by cutting out a part of a corner portion thereof.

Preferably, the glass substrate is a support glass substrate for manufacturing a fan-out type wafer level package.

One mode of the glass substrate of the present invention has a shape suitable for the manufacture of FOWLP.

Drawings

Fig. 1 is a plan view of a glass substrate according to an embodiment of the present invention.

Fig. 2 is a front view of a glass substrate according to an embodiment of the present invention.

Fig. 3 is a partially enlarged view of the surface of the glass substrate shown in fig. 1.

Fig. 4 is a partially enlarged view of fig. 3.

Fig. 5 is a perspective view of a glass original plate.

Fig. 6 is a diagram illustrating a state where the glass original plate is cut.

Fig. 7 is a diagram illustrating a state in which an end face of a glass substrate is chamfered.

Fig. 8 is a diagram showing a state in which an alignment portion is formed on an end surface of a glass substrate.

Fig. 9(a) to 9(F) are cross-sectional views showing a FOWLP manufacturing process using the glass substrate according to the embodiment as a supporting glass substrate for FOWLP manufacturing.

Description of reference numerals: 10. a glass substrate; a first surface; a second surface; an end face; a notch (alignment portion); a glass original plate; 100A, 100b. 101A, 101b.. supporting a glass substrate; 102A, 102b.. an adsorbent layer; 102a1, 102b1.. peel layer; 102a2, 102b2.. adhesive layer; a semiconductor chip; a seal; a component substrate.

Detailed Description

Hereinafter, one embodiment of the present invention will be described in detail. For ease of understanding of the description, the same components are denoted by the same reference numerals in the drawings, and redundant description is omitted. In addition, the scale of each member in the drawings may be different from that in reality. In the present specification, a three-dimensional orthogonal coordinate system in three axial directions (X-axis direction, Y-axis direction, and Z-axis direction) is used, and the coordinates of the surface of the glass substrate are referred to as the X-axis direction and the Y-axis direction, and the height direction (thickness direction) is referred to as the Z-axis direction. The direction from the bottom to the top of the glass substrate (the direction from the surface of the glass substrate toward the release layer) was defined as the + Z-axis direction, and the opposite direction was defined as the-Z-axis direction. In the following description, the + Z axis direction is sometimes referred to as up, and the-Z axis direction is sometimes referred to as down. In the present specification, the wavy line "to" indicating a numerical range means that the numerical values described before and after the wavy line "to" are included as the lower limit value and the upper limit value unless otherwise specified.

(glass substrate)

A glass substrate according to an embodiment will be described. Fig. 1 is a plan view of a glass substrate according to an embodiment, and fig. 2 is a front view of the glass substrate according to the embodiment. As shown in fig. 1 and 2, a glass substrate 10 according to one embodiment is used as a glass substrate for manufacturing a semiconductor package, such as a supporting glass substrate for FOWLP manufacturing, and includes: a pair of first and second surfaces 11 and 12 parallel to each other, and an end surface 13 connecting the pair of first and second surfaces 11 and 12.

The upper and lower sides of the end surface 13 of the glass substrate 10 are chamfered over the entire circumference.

The composition of the glass substrate 10 will be described. The glass substrate 10 can preferably use a glass material having a glass matrix composition containing 50 to 80% of SiO expressed in mol% based on oxides₂0 to 20 percent of Al₂O₃0 to 20% of B₂O₃0 to 20 percent of MgO, 0 to 20 percent of CaO, 0 to 20 percent of SrO, 0 to 20 percent of BaO and 0 to 15 percent of Na₂O, 0-15% of K₂O, 0-15% of Li₂O, 0-3% TiO₂0 to 3% of ZrO₂. The glass substrate 10 may contain other components in the glass matrix composition described above within a range that does not impair the effects of the glass substrate 10. As other components, for example, SnO can be used₂、SO₃、Cl、F、ZnO、Y₂O₃、La₂O₃、TiO₂、V₂O₅、P₂O₅、CeO₂、WO₃、Nb₂O₅、Bi₂O₃And MoO₃And the like.

The first surface 11, the second surface 12, and the end surface 13 constituting the glass substrate 10 will be described.

As shown in fig. 1 and 2, the first surface 11 and the second surface 12 are flat surfaces, respectively. The first surface 11 and the second surface 12 are formed in a circular shape in a plan view except for the notch 14. In the present embodiment, the first surface 11 is a main surface of the glass substrate 10, and the second surface 12 is a main back surface of the glass substrate 10. In the present embodiment, the first surface 11 and the second surface 12 may be collectively referred to as a surface.

The surface area of the glass substrate 10 can be arbitrarily adjusted, and is preferably 15cm, for example²～10000cm²More preferably 75cm²～5500cm²More preferably 150cm²～3500cm²Most preferably 300cm²～2000cm². If the area of the glass substrate 10 is 15cm²As described above, many semiconductor chips can be arranged, and the number of finished semiconductor devices obtained by subsequent singulation can be increased, thereby improving productivity. On the other hand, if the area of the glass substrate 10 is 10000cm²Hereinafter, handling of the glass substrate 10 becomes easy, and damage due to contact with a semiconductor chip to be attached, damage due to contact with peripheral components when the glass substrate 10 is conveyed, and the like can be suppressed.

The diameter of the glass substrate 10 in plan view is 50mm to 450mm, preferably 100mm to 400mm, and more preferably 200mm to 350 mm. When the diameter of the glass substrate 10 is less than 50mm, many semiconductor devices cannot be obtained from the laminated substrate 100A (see fig. 9 a to 9F) including the glass substrate 10 and the element substrate in which the semiconductor chip is sealed with the sealing resin, and it is difficult to improve productivity. If the diameter of the glass substrate 10 exceeds 450mm, the glass substrate 10 is difficult to handle. In general, a conventional semiconductor substrate is processed into a circular shape having a diameter of, for example, 300mm in a plan view. Therefore, if the diameter of the glass substrate 10 is too large, the fluidity of the conventional apparatus for handling semiconductor substrates is reduced, and it is difficult to use the glass substrate as it is for the apparatus for handling semiconductor substrates.

The arithmetic average roughness Ra of the surfaces (the first surface 11 and the second surface 12) is 0.3nm to 2.0 nm. If the arithmetic mean roughness Ra of the surface is less than 0.3nm, when the surface of the glass substrate 10 is coated with the release resin, the anchor effect that improves the adhesion force with the release resin on the surface of the glass substrate 10 decreases, and the adhesion of the release resin to the surface of the glass substrate 10 decreases. On the other hand, when the arithmetic average roughness Ra of the surface exceeds 2.0nm, the transmittance of the surface of the glass substrate 10 decreases. When the release layer 102a1 (see fig. 9 a to 9F) laminated on the glass substrate 10 is irradiated with a laser beam to peel the glass substrate 10 from the laminated substrate 100A, diffuse reflection tends to occur at the interface between the glass substrate 10 and the element substrate 110 (see fig. 9 a to 9F).

In addition, the arithmetic average roughness Ra can be calculated based on japanese industrial standard JIS B0601: 2001.

The Total thickness variation (Total thickness variation: TTV) of the surfaces (the first surface 11 and the second surface 12) is preferably 10 μm or less. When the TTV of the surface exceeds 10 μm, the wiring is likely to be fluctuated when the layer laminated on the glass substrate 10 (for example, the element substrate 110 (see fig. 9 a to 9F)) is formed by photolithography or the like.

In the present specification, TTV is an amount defined by the difference (TTV ═ Tmax-Tmin) between the maximum thickness (Tmax) and the minimum thickness (Tmin) determined from the thickness distribution of the glass substrate 10. The TTV of the surface can be adjusted by polishing the surface, for example.

As shown in fig. 2, the end face 13 is formed substantially perpendicularly to the first surface 11 and the second surface 12. As shown in fig. 2, the end face 13 is chamfered in its entirety.

The arithmetic average roughness Ra of the end face 13 is preferably 0.01 to 2.0. mu.m, and more preferably 0.1 to 1.0. mu.m. When the arithmetic average roughness Ra of the end face 13 is 0.01 μm to 2.0 μm, damage to the end face 13 and the like are suppressed, and an increase in cost required for molding the end face 13 is suppressed. The transparency when viewed from the end face 13 is not excessively high.

The thickness of the glass substrate 10 is 0.1mm to 2.0mm, preferably 0.7mm to 1.0 mm. If the thickness is less than 0.1mm, the glass substrate 10 is too thin, and therefore the glass substrate 10 is likely to warp. Further, the glass substrate 10 may be damaged by an impact when the semiconductor chip is mounted thereon. If the thickness exceeds 2.0mm, the laminated substrate 100A (see fig. 9 a to 9F) becomes heavy because the glass substrate is too heavy.

As shown in fig. 1, the glass substrate 10 has a notch (notch) 14 as an alignment portion, which is formed in a substantially U shape in a plan view, on an end surface 13. The substantially U-shape also includes a shape in which the opening of the U is enlarged. The notch 14 can be formed by grinding or the like. The notch 14 may be formed in a substantially V-shape or a semicircular shape in a plan view. The substantially V-shape also includes a shape in which the front end of the V is rounded.

The recess 14 is chamfered over its entire end surface area.

As shown in fig. 1, the glass substrate 10 has an information display portion 15 on the first surface 11. In the present embodiment, the information display portion 15 is provided near the notch 14. As shown in fig. 3, the information display unit 15 is configured by a combination of one or more characters, numerals, symbols, two-dimensional codes, graphics, and the like. The information display unit 15 includes, for example: identification information on the glass substrate 10, such as the size (thickness, outer diameter) of the glass substrate 10, the manufacturing number, the manufacturing year, month, and day, the manufacturer name, and the seller name. As shown in fig. 4, the characters and the like constituting the information display unit 15 are formed of, for example, a plurality of concave dots (concave portions). The depth and width of the dots can be appropriately designed according to the size, material, and the like of the glass substrate 10, and for example, the depth of the dots can be 1.0 μm to 100 μm, and the width of the dots can be 10 μm to 200 μm. The shape of the point may be a quadrangle in a plan view.

Thus, the glass substrate 10 is formed into a circular shape having a diameter of 50mm to 450mm in a plan view, a thickness of 0.1mm to 2.0mm, and an arithmetic average roughness Ra of the surface of 0.3nm to 2.0 nm.

The glass substrate 10 is formed in a circular shape having a diameter of 50mm to 450mm in plan view, and thus many semiconductor devices can be obtained from a laminated substrate in which element substrates in which semiconductor chips are sealed with a sealing resin are laminated on the glass substrate 10, and productivity can be improved. In addition, handling of the glass substrate 10 can be facilitated. Further, since the shape and size of the glass substrate 10 are the same as or similar to those of the conventional semiconductor substrate, they can be directly used in the conventional apparatus for handling semiconductor substrates.

In addition, by making the thickness of the glass substrate 10 0.1mm to 2.0mm, a laminated substrate in which element substrates are laminated on the glass substrate 10 can be made smaller, and damage due to contact with peripheral components when the glass substrate 10 is conveyed can be suppressed. Further, it is possible to suppress the occurrence of cracks when the glass substrate 10 is provided with a semiconductor chip, etc., and to reduce the weight of the glass substrate 10. Further, in the case of a laminated substrate in which an element substrate in which a semiconductor chip is sealed with a sealing resin is laminated on the glass substrate 10, warpage of the laminated substrate can be suppressed.

In addition, when the glass substrate 10 has an arithmetic mean roughness Ra of 0.3nm to 2.0nm on the surface thereof, it is possible to suppress a decrease in transmittance of a laser beam when the peeling layer is irradiated with the laser beam after the glass substrate 10 is laminated, and to reduce occurrence of diffuse reflection at the interface between the glass substrate 10 and the peeling layer, and therefore, it is possible to stably peel the glass substrate 10 from the peeling layer. Further, since the adhesiveness of the release layer to the glass substrate 10 can be improved, when an element substrate obtained by sealing a semiconductor chip on the glass substrate 10 with a release layer-forming sealing resin, the release layer can be prevented from being peeled from the glass substrate 10 and the glass substrate 10 can be prevented from being separated from the element substrate.

Therefore, the glass substrate 10 can have a shape more suitable for the production of FOWLP by forming it into a circular shape having a diameter of 50mm to 450mm in a plan view, and by forming it into a thickness of 0.1mm to 2.0mm and an arithmetic average roughness Ra of the surface of 0.3nm to 2.0nm as described above.

The glass substrate 10 can have an arithmetic average roughness Ra of the end face 13 of 0.01 to 2.0 [ mu ] m. This can suppress the molding cost of the end face 13 and suppress a decrease in the yield of the glass substrate 10. In addition, in the case of inspecting the glass substrate 10, the position of the glass substrate 10 is determined and detected by the reflected light of the light irradiated to the glass substrate 10. The glass substrate 10 can suppress the transparency of the end face 13 to a suitable degree and can suppress the reflection light from the end face 13 of the glass substrate 10, thereby making it possible to easily detect the position of the glass substrate 10. Further, when a liquid such as water adheres to the end surface 13 of the glass substrate 10, the contact area between the end surface 13 and the liquid can be reduced. This makes it easy for the liquid to slide on the end face 13 and to be easily separated by wind or the like during drying, thereby making it difficult for the liquid to adhere to the end face 13. Therefore, the glass substrate 10 can improve wettability (lyophilic) of the end surface 13, and thus can suppress adhesion of liquid or the like to the end surface 13.

The glass substrate 10 can have a TTV of 10 μm or less on its surface. Thus, for example, after an element substrate in which a semiconductor chip is sealed with a sealing resin is provided on the first surface 11 of the glass substrate 10, when wiring is formed on the element substrate by photolithography or the like, the fluctuation is suppressed, and therefore, wiring or the like can be formed on the element substrate stably and with high accuracy.

The glass substrate 10 can be prevented from being cracked or chipped by chamfering the end face 13 thereof. In addition, the chamfer can impart an arithmetic average roughness Ra different from that of the first surface 11 and the second surface 12, and therefore can reduce wet spread of the release resin when the release resin is coated.

The glass substrate 10 can be mirror-finished on the end face 13. This can improve the flatness of the end face 13 of the glass substrate 10, thereby improving the strength of the end face 13 and suppressing the occurrence of cracks.

The glass substrate 10 can have a notch 14 at its end face 13. This makes it possible to easily check the orientation of the glass substrate 10.

(method for producing glass substrate)

Next, a method for manufacturing the glass substrate 10 will be described with reference to fig. 5 to 9(a) to 9 (F).

As shown in fig. 5, a rectangular glass original plate 20 having a front surface and an end surface formed thereon is prepared (glass original plate preparation step). Examples of the glass material of the glass original plate 20 include borosilicate glass and soda-lime glass.

The thickness of the glass original plate 20 is appropriately set according to the use of the glass substrate 10 as a finished product. For example, the thickness of the glass original plate 20 is 0.1mm to 2.0 mm.

The glass original plate 20 can be manufactured by a float method, a melting method, a redrawing method, a press molding method, a drawing method, or the like. The float process is preferably used as the method for producing the glass original plate 20 in terms of excellent productivity and cost.

Next, as shown in fig. 6, the glass original plate 20 is cut into a plurality of (4 in fig. 6) glass substrates 10A (cutting step of the glass original plate). In the present embodiment, the glass substrate 10A is cut into a circular shape in a plan view. The glass substrate 10A has a first surface 11, a second surface 12, and an end surface 13.

As a method for cutting the glass original plate 20, for example, a method of cutting by irradiating a surface of the glass original plate 20 with a laser beam and moving an irradiation region of the laser beam on the surface of the glass original plate 20, a mechanical cutting method such as cutting by a dicer, or the like is used.

Next, as shown in fig. 7, the end face 13 of the cut glass substrate 10A is chamfered by the rotary grindstone 31, and notched (a processing step of the end face of the glass substrate). By chamfering the end face 13 of the glass substrate 10A, defective portions and the like generated at the end face 13 can be reduced. An annular grinding groove 312 extending in the circumferential direction is formed in the outer circumferential surface 311 of the rotary grindstone 31. The wall surface of the polishing groove 312 includes abrasive grains such as alumina, silicon carbide, or diamond. The abrasive grains have a particle size of, for example, #300 to # 2000. In addition, the particle size of the abrasive grains is a particle size based on JIS-R6001. The particle size was measured according to JIS-R6002. The rotary grindstone 31 rotates about the center line of the rotary grindstone 31 and moves relative to the outer edge of the glass substrate 10A. Thereby, the outer edge portion of the glass substrate 10A is polished by the wall surface of the polishing groove 312. After the chamfering of the end face 13, for example, a fine grindstone or the like is performed, and the notch processing of the end face 13 is performed to form a notch 14 in the end face 13. Further, the notch processing may not be performed.

Next, the surface (the first surface 11 and the second surface 12) and the end face 13 of the glass substrate 10A are polished with a grindstone or the like, and then mirror finished with cerium oxide or the like (polishing step of the glass substrate).

The polishing of the surface of the glass substrate 10A may be performed before the polishing of the end face 13, or may be performed after the polishing of the end face 13.

In the case where the polishing of the surface of the glass substrate 10A is performed after the polishing of the end face 13, a polishing carrier or the like having a holding hole for holding the glass substrate 10A can be used for the polishing of the surface of the glass substrate 10A. As the polishing carrier, glass fiber-reinforced epoxy resin, aramid resin, polyvinyl chloride resin, or the like can be used.

Next, after the glass substrate 10A is polished, the glass substrate 10A is cleaned with a cleaning liquid such as purified water (a cleaning step of the glass substrate).

Next, the information display portion 15 is formed in the vicinity of the notch 14 on the first surface 11 of the glass substrate 10A (step of forming the information display portion on the glass substrate).

The information display portion 15 can be formed on the first surface 11 of the glass substrate 10A by so-called laser marking. In the laser marking, a laser beam is irradiated onto the glass substrate 10A, and the irradiated region of the laser beam is melted to form dots (concave portions) of characters and the like constituting the information display unit 15. The information display portion 15 is formed by continuously forming a plurality of dots.

The glass substrate 10 shown in fig. 1 and 2 is manufactured by forming the information display portion 15 on the first surface 11 of the glass substrate 10A.

Next, the glass substrate 10 is cleaned, rinsed, and dried (cleaning, rinsing, and drying steps of the glass substrate). The glass substrate 10 may be cleaned by any known cleaning method as long as the glass substrate 10 can be cleaned. As the rinsing of the glass substrate 10, a known rinsing method can be used. In addition, when the glass substrate 10 is cleaned without using an alkaline detergent, the glass substrate 10 may not be rinsed. The glass substrate 10 may be dried by any method as long as the glass substrate 10 can be dried, and a known drying method can be used.

As described above, the glass substrate 10 obtained by the method for manufacturing a glass substrate according to the embodiment has the above-described shape, and therefore, can be suitably used as a glass substrate for manufacturing a semiconductor package, such as a supporting glass substrate for FOWLP manufacturing. As the glass substrate for manufacturing the semiconductor package, the glass substrate 10 can be used, for example, as a glass substrate for an image sensor such as MEMS, CMOS, or CIS, or as a glass substrate (GIP) having a through hole, in addition to a supporting glass substrate for manufacturing FOWLP.

Next, a case where the glass substrate of one embodiment is used as a supporting glass substrate for FOWLP manufacturing will be described.

Fig. 9(a) to 9(F) are cross-sectional views showing a manufacturing process of using the glass substrate of one embodiment as a supporting glass substrate for FOWLP manufacturing. As shown in fig. 9 a to 9F, an adsorption layer 102A is formed on a support glass substrate (first support glass substrate) 101A, and a plurality of semiconductor chips 103 are bonded to the support glass substrate 101A via the adsorption layer 102A (see fig. 9 a). The glass substrate 10 of the present embodiment described above is used as the supporting glass substrate 101A. The adsorption layer 102A includes a separation layer 102A1 and an adhesive layer 102A2 in this order on the support glass substrate 101A. The adsorption layer 102A may be formed of either the release layer 102A1 or the adhesive layer 102A2, and is preferably formed of the release layer 102A 1.

Next, the plurality of semiconductor chips 103 are covered with the sealing material 104 on the plurality of semiconductor chips 103, and the element substrate 110 is formed, thereby obtaining a laminated substrate (first laminated substrate) 100A (see fig. 9B).

Next, by irradiating irradiation light such as a laser beam through the support glass substrate 101A to the peeling layer 102a1, the support glass substrate 101A, the adhesive layer 102a2, and the element substrate 110 (see fig. 9C) are separated by the peeling layer 102a 1. The adhesive layer 102a2 remaining on the main surface of the element substrate 110 is dissolved and removed, and the active surface of the semiconductor chip 103 is exposed.

Next, the element substrate 110 is bonded to the supporting glass substrate (second supporting glass substrate) 101B with the surface opposite to the active surface thereof being interposed therebetween by the adsorption layer 102B, to obtain a laminated substrate (second laminated substrate) 100B (see fig. 9D). The glass substrate 10 of the present embodiment described above is used as the support glass substrate 101B.

A wiring 105 is formed on the surface of the element substrate 110 on the side where the semiconductor chip 103 is embedded, and a plurality of solder bumps 106 are formed thereon (see fig. 9E). Thereafter, the element substrate 110 and the supporting glass substrate 101B are separated, and after the adhesive layer 102B2 remaining on the main surface of the element substrate 110 is removed, the element substrate 110 is diced into individual semiconductor chips 103 to be singulated, thereby obtaining a semiconductor device (see fig. 9F).

The glass substrate 10 according to one embodiment is used as the support glass substrate 101A. Therefore, the supporting glass substrate 101A is formed in a circular shape having a diameter of 50mm to 450mm in a plan view, and therefore many semiconductor devices can be obtained from the element substrate 110, and the supporting glass substrate 101A can be handled easily with high productivity. In addition, the supporting glass substrate 101A has the same shape and size as or similar to those of conventional semiconductor substrates, and thus can be used directly in conventional apparatuses for handling semiconductor substrates.

Further, since the supporting glass substrate 101A has a thickness of 0.1mm to 2.0mm, the laminated substrate 100A can be downsized, and damage due to contact with peripheral components when the supporting glass substrate 101A is conveyed can be suppressed. Further, the supporting glass substrate 101A is reduced in weight while suppressing the occurrence of cracks when the supporting glass substrate 101A is provided with the semiconductor chip 103 and the like. Further, even in the laminated substrate 100A in which the element substrate 110 is laminated on the support glass substrate 101A, the support glass substrate 101A can be polished stably because the occurrence of warpage in the laminated substrate 100A can be suppressed.

The arithmetic average roughness Ra of the surface of the supporting glass substrate 101A is set to 0.3nm to 2.0 nm. Thus, when the peeling layer 102a1 laminated on the support glass substrate 101A is irradiated with a laser beam to peel the support glass substrate 101A from the sealing material 104, the occurrence of diffuse reflection at the interface between the support glass substrate 101A and the peeling layer 102a1 can be reduced while suppressing a decrease in the transmittance of the laser beam. Therefore, the supporting glass substrate 101A can be stably peeled from the peeling layer 102a 1. Further, the anchor effect acts on the surface of the glass substrate 10, and the adhesion of the peeling layer 102a1 to the glass substrate 10 can be improved. Therefore, the peeling layer 102a1 can be prevented from peeling off from the support glass substrate 101A when the element substrate 110 is formed.

Therefore, the supporting glass substrate 101A is formed in a circular shape having a diameter of 50mm to 450mm in a plan view, has a thickness of 0.1mm to 2.0mm, and has a shape more suitable for the production of FOWLP by setting the arithmetic average roughness Ra of the surface to 0.3nm to 2.0 nm.

Therefore, by using the glass substrate 10 of one embodiment for the supporting glass substrate 101A for FOWLP production, it is possible to suppress the occurrence of damage or the like to the supporting glass substrate 101A, and to produce a semiconductor device more stably.

The supporting glass substrate 101A may have an arithmetic average roughness Ra of 0.01 μm to 2.0 μm on the end surface. This can suppress damage and the like of the end face, and therefore can suppress the yield and the molding cost of the end face. Further, since the transparency when the supporting glass substrate 101A is viewed from the end face can be appropriately suppressed, the positions of the supporting glass substrate 101A and the element substrate 110 can be easily detected when the supporting glass substrate 101A and the element substrate 110 are inspected. The positions of the support glass substrate 101A and the element substrate 110 are determined and detected by reflected light generated by irradiating the support glass substrate 101A and the element substrate 110 with light. Since the support glass substrate 101A is easily transparent to light, the positions of the support glass substrate 101A and the element substrate 110 can be easily detected by appropriately suppressing the transparency of the end face of the support glass substrate 101A and suppressing the reflection light from the end face. Further, when a liquid such as water adheres to the end surface of the support glass substrate 101A, the contact area between the end surface and the liquid can be reduced. This makes it easy for the liquid to slide on the end face and to be separated by wind or the like during drying, and therefore makes it difficult for the liquid to adhere to the end face. Therefore, the supporting glass substrate 101A can improve wettability (lyophilic) of the end face thereof, and can suppress adhesion of liquid or the like to the end face.

The end face of the support glass substrate 101A may be chamfered. This can suppress the occurrence of cracks or chipping in the support glass substrate 101A. In addition, the chamfer can impart an arithmetic average roughness Ra different from the surface, and therefore can reduce the peeling resin wet spread when coated with the peeling resin.

The supporting glass substrate 101A may be mirror-processed on its surface or end face. This can improve the flatness of the surface or end face of the support glass substrate 101A, thereby improving the strength of the surface or end face and suppressing the occurrence of cracks.

The support glass substrate 101A may have a notch at its end face. This makes it possible to easily check the direction of the support glass substrate 101A. The same glass substrate as 101A can be used for the supporting glass substrate 101B.

(modification example)

A modified example of the glass substrate 10 will be described.

In the present embodiment, the shape of the glass substrate 10 in a plan view is not particularly limited, and may be a rectangle or the like. When the glass substrate 10 has a rectangular shape, the semiconductor chip can be arranged without an extra gap. As a result, the number of finished semiconductor devices can be increased, which is preferable.

When the shape of the glass substrate 10 is rectangular in a plan view, each side is 50mm to 1000 mm. The shape of the glass substrate 10 is preferably rectangular. When the glass substrate 10 has a rectangular shape, the shorter side is preferably set to the above value. When the glass substrate 10 is formed in a rectangular shape in a plan view, the glass substrate 10 can be used for, for example, an electronic circuit substrate having a size of 10mm × 10mm to 920mm × 730mm, a display manufacturing apparatus, or the like.

In the present embodiment, only a part of the end surface 13 may be chamfered.

In this embodiment, the notch 14 may not be provided.

In the present embodiment, the notch 14 may be chamfered at a part of its end surface area.

In the present embodiment, the glass substrate 10 may have an oriented flat surface portion in which a part of the outer periphery is linearly cut out on the end surface 13, instead of the notch 14. When the glass substrate 10 is formed in a rectangular shape in a plan view, the glass substrate may have a shape having a cut portion obtained by cutting out a part of a corner portion (corner portion). The glass substrate 10 may have both the notch 14 and the directional flat portion or the cut portion.

In the present embodiment, the information display unit 15 may be formed on the second surface 12, or may be formed on both the first surface 11 and the second surface 12. The information display unit 15 may be formed on the end surface 13. The information display unit 15 may be omitted.

Examples

The embodiments will be described more specifically below with reference to examples, but the embodiments are not limited to these examples.

< example 1 >

[ production of glass substrate ]

A glass plate (1200 mm in length, 1000mm in width, 1.3mm in thickness) was produced by the float method. A glass original plate was prepared. The glass master comprises 70% SiO in mol% based on the oxide₂5% Al2O ₃10% of CaO, 15% of Na₂And O. A circular plate having a radius of 150mm was cut out from the glass original plate. Next, the glass substrate of the cut disc was chamfered using a machining center ("VP 600", manufactured by OKK corporation). Chamfering was performed by irradiating the edge-processed portion of the glass substrate of the disk with a coolant using a grindstone (No. 500 metal bond grindstone, manufactured by asahi diamond industries). Thereafter, the surface of the glass substrate of the disk was polished using a double-side polisher ("16 BF-4M 5P", manufactured by Hamamatsu industries, Ltd.). The surface polishing was carried out using a polishing pad ("hard polyurethane pad", manufactured by FUJIBO corporation) and a polishing agent ("ceria polishing agent", manufactured by showa electric corporation)). Thereby obtaining a glass substrate.

[ measurement of thickness, TTV, surface roughness and end face roughness of glass substrate ]

The thickness, TTV, surface roughness and end face roughness of the dried glass substrate were measured.

(measurement of thickness of glass substrate)

The thickness of the glass substrate was measured by using a laser displacement meter (ZW-S7020, manufactured by OMRON).

(measurement of TTV on the surface of glass substrate)

The TTV of the glass substrate was measured by measuring the thickness of the glass substrate at 5 or more points by a laser displacement meter (ZW-S7020, manufactured by OMRON corporation) and calculating the difference between the maximum value and the minimum value.

(measurement of surface roughness of glass substrate)

The surface shape of the glass substrate surface was measured using an atomic force microscope (manufactured by KEYENCE). Then, the arithmetic average roughness Ra was obtained as the surface roughness from the obtained measurement data. The evaluation area was 5 μm square on the surface of the glass substrate.

(measurement of end surface roughness of glass substrate)

The surface shape of the end face of the glass substrate was measured using a Laser microscope (manufactured by KEYENCE). Then, the arithmetic average roughness Ra was obtained as the end surface roughness from the obtained measurement data. The surface and end faces of the glass substrate were set to 50 μm square as evaluation regions.

< examples 2 to 11 >

The same operation as in example 1 was performed except that the conditions described in table 1 were changed.

The results of examples 1 to 11 are shown in Table 1.

TABLE 1

According to table 1, the glass substrates of examples 1 to 11 were all within the ranges of the predetermined shape, thickness, TTV, surface roughness (arithmetic average roughness Ra), and end surface roughness (arithmetic average roughness Ra). Therefore, when the glass substrates of examples 1 to 11 were used for the production of FOWLP, and the sealing body was laminated on the glass substrates via the peeling layer, even if the peeling layer was irradiated with light such as a laser beam, the decrease in the transmittance of the laser beam could be suppressed, and the occurrence of diffuse reflection of the laser beam at the interface between the glass substrate and the peeling layer could be suppressed. In addition, the glass substrate can be sufficiently strongly adhered to the peeling layer. Therefore, when the glass substrates of examples 1 to 11 were used for the production of FOWLP, the adhesion strength of the peeling layer formed on the glass substrate was weakened when the glass substrate was peeled from the sealing body, and the glass substrate was stably peeled from the element substrate. Further, it can be said that the separation layer can be suppressed from being separated from the glass substrate when the element substrate is formed. Therefore, the glass substrates of examples 1 to 11 can all be said to have a shape more suitable for the production of FOWLP.

The embodiments have been described above, but the embodiments are presented as examples, and the present invention is not limited to the embodiments. The above embodiments can be implemented in other various forms, and various combinations, omissions, substitutions, and changes can be made without departing from the scope of the present invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the technical means described in the claims of the invention and the equivalent scope thereof.

Claims (6)

1. A glass substrate for manufacturing a semiconductor package, characterized in that,

the glass substrate is a plate-shaped member formed in a circular shape having a diameter of 50mm to 450mm or a rectangular shape having sides of 50mm to 1000mm in a plan view,

the thickness is 0.1 mm-2.0 mm,

the arithmetic average roughness Ra of the surface is 0.3nm to 2.0nm,

the glass substrate has an end face with an arithmetic average roughness Ra of 0.01 to 2.0 [ mu ] m,

the TTV of the surface of the glass substrate is 10 [ mu ] m or less,

at least a part of the end surface of the glass substrate is chamfered.

2. The glass substrate according to claim 1,

the end face of the glass substrate is mirror-finished.

3. The glass substrate according to claim 1,

the glass substrate has an alignment portion formed in a notch shape on an end surface of the glass substrate.

4. The glass substrate according to claim 1,

when the glass substrate is a plate-like member formed in a circular shape in a plan view,

the glass substrate has an oriented flat surface portion on an end surface of the glass substrate.

5. The glass substrate according to claim 1,

in the case where the glass substrate is a plate-like member formed in a rectangular shape in a plan view,

the glass substrate has a cut portion formed by cutting out a part of a corner portion thereof.

6. The glass substrate according to claim 1,

the glass substrate is a supporting glass substrate for manufacturing a fan-out wafer level package.

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