CN210380794U - Metal post frequency hopping filter - Google Patents

Metal post frequency hopping filter Download PDF

Info

Publication number
CN210380794U
CN210380794U CN201921610477.6U CN201921610477U CN210380794U CN 210380794 U CN210380794 U CN 210380794U CN 201921610477 U CN201921610477 U CN 201921610477U CN 210380794 U CN210380794 U CN 210380794U
Authority
CN
China
Prior art keywords
electrically connected
resistor
diode
zener diode
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201921610477.6U
Other languages
Chinese (zh)
Inventor
陶有红
曾清波
黄月亮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hefei Powersky Electronic Technology Co ltd
Original Assignee
Hefei Powersky Electronic Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hefei Powersky Electronic Technology Co ltd filed Critical Hefei Powersky Electronic Technology Co ltd
Priority to CN201921610477.6U priority Critical patent/CN210380794U/en
Application granted granted Critical
Publication of CN210380794U publication Critical patent/CN210380794U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The utility model relates to a metal post frequency hopping filter, including radio frequency circuit, PIN diode resonance capacitor array, digital control circuit, radio frequency circuit and PIN diode resonance capacitor electric connection, PIN diode resonance electric connection and digital control circuit electric connection. The utility model adopts the metal post as the resonance unit, has lower loss and large power capacity; in a military communication system with special requirements, the method is a better choice. External control equipment sends high level control signal or low level control signal to the IO port, in sending to digital control circuit through the IO port, digital control circuit control frequency modulation filter switches on or does not switch on, control start efficiency is high, and utilize first resonance metal post, second resonance metal post as the resonance unit for this wave filter can bear bigger power, and its zener diode Q value is more than traditional SMD inductance a lot more, and the loss is littleer.

Description

Metal post frequency hopping filter
Technical Field
The utility model relates to the field of communication, concretely relates to metal post frequency hopping filter.
Background
The rf filter is an important component in radar, communication and other systems, and is generally installed at a receiving or transmitting port of an rf component system for selecting a useful signal and suppressing spurious signals. The frequency hopping filter is a novel band-pass addressing filter component, and is increasingly widely used in modern military communication systems in order to protect the safety of communication information.
The traditional fixed frequency communication mode has single frequency point, poor anti-interference capability and easy interception, thereby exposing military information, and the frequency hopping filter technology flexibly changes the communication frequency point, has outstanding performances in aspects of interception resistance, anti-interference and the like, and has become an important development direction in the field of military communication of countries in the world. The frequency hopping filter is used as an innovative communication unit and has a great optimization space and a great development prospect.
At present, the frequency hopping filter using LC as a resonance unit has small power capacity, is easy to cause system breakdown in a severe environment required by a military communication system, and has poor reliability and stability. The PIN diode and the varactor combined frequency hopping filter has large loss, and the influence on a special communication system with higher requirement is larger.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a metal post frequency hopping filter is provided to solve and use LC to be the little problem of resonance unit's frequency hopping filter power capacity.
The utility model discloses a following technical means realizes solving above-mentioned technical problem:
the utility model provides a metal post frequency hopping filter, includes radio frequency circuit, PIN diode resonance capacitor array, digital control circuit, radio frequency circuit and PIN diode resonance capacitor electric connection, PIN diode resonance electric connection and digital control circuit electric connection.
The radio frequency circuit comprises an RFIN interface, a first matching inductor, a first resonant metal column, a second matching inductor and an RFOUT interface, wherein the RFIN interface is electrically connected with the first matching inductor, the first matching inductor is electrically connected with the first resonant metal column, the first resonant metal column and the second resonant metal column are coupled through space, the first resonant metal column and the second resonant metal column are connected with the inner surface of the top of the filter packaging box body, the second resonant metal column is electrically connected with the second matching inductor, and the second matching inductor is connected with the RFOUT interface.
Through the setting of first resonance metal post, second resonance metal post, have lower loss, the advantage that power capacity is big, stability is high moreover, has fully solved the problem that power capacity is little, poor stability, loss are poor among the traditional frequency hopping filter.
As a further aspect of the present invention: and the first resonant metal column and the second resonant metal column are electrically connected with the diode resonant capacitor array.
As a further aspect of the present invention: the digital control circuit is located on the circuit board.
As a further aspect of the present invention: the digital control circuit comprises a power supply VCC1, a power supply VCC2, an inductor L, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a zener diode Q1, a zener diode Q2, a zener diode Q3, a zener diode Q4, a zener diode Q5, a zener diode Q6, a zener diode Q7, a zener diode Q8, a zener diode Q9, a rectifier diode D1, a MOS tube T1, a MOS tube T2, a MOS tube T3 and a switch circuit, wherein one end of the resistor R1 is electrically connected with one end of the resistor R2 and a T/0 port, and is in communication connection with external control equipment through an I/O port.
The other end of the resistor R2 is electrically connected with the cathode of a zener diode Q1 and the grid of T1, the anode of the zener diode Q1 is electrically connected with the anode of a zener diode Q2, the cathode of the zener diode Q2 is electrically connected with the anode of a zener diode Q3, the cathode of the zener diode Q3 is electrically connected with the drain of the T1, the source of the T1 is electrically connected with the substrate, and one end of the T1, which is connected with the source and the substrate, is electrically connected with a power supply VCC 1;
the drain of the T1 is electrically connected to one end of a resistor R3, the gate of the T2 and the cathode of a rectifier diode D1, the other end of the resistor R3 is electrically connected to one end of a resistor R4 and is connected to a power supply VCC2, the other end of the resistor R4 is electrically connected to the drain of the T2 and the cathode of a zener diode Q6, the gate of the T2 is also electrically connected to the cathode of the rectifier diode D1, the substrate of the T2 is electrically connected to the source, the electrically connected end of the substrate of the T2 and the source is electrically connected to the anode of the rectifier diode D1 and to one end of an inductor L, and the other end of the inductor L is electrically connected to a switch circuit;
the other end of the resistor R1 is electrically connected with the grid of the T3 and the cathode of the Zener diode Q7, the anode of the Zener diode Q7 is electrically connected with the anode of the Zener diode Q8, the cathode of the Zener diode Q8 is electrically connected with the anode of the Zener diode Q9, the cathode of the Zener diode Q9 is electrically connected with the drain of the T3, one end of the cathode of the Zener diode Q9, which is connected with the drain of the T3, is connected with the inductor L, the substrate of the T3 is electrically connected with the source, and one end of the substrate of the T3, which is connected with the source, is connected with the power supply VCC 1.
As a further aspect of the present invention: the resistance values of the resistor R1 and the resistor R2 are 2.4K omega, the resistance value of the resistor R3 is 1M omega, the resistance value of the resistor R4 is 1.2K omega, the models of the resistor T1, the resistor T2 and the resistor T3 are STL2N80K5, the power supply VCC1 is-3.3V, and the voltage VCC2 can provide high voltage.
As a further aspect of the present invention: the switch circuit comprises a resistor R5, a resistor R6, a resistor R7, a capacitor C1, a capacitor C2, a capacitor C3, a rectifier diode D2 and a rectifier diode D3;
the other end of the inductor is electrically connected with one end of a capacitor C1, the other end of the capacitor C1 is grounded, one end of a capacitor C1 connected with the inductor L is also electrically connected with the anode of a rectifier diode D2, the rectifier diode D2 is connected with a resistor R5 in parallel, the anode of a rectifier diode D2 is electrically connected with one end of a capacitor C3 and the cathode of a rectifier diode D3, the other end of a capacitor C3 is electrically connected with a resonant capacitor, the rectifier diode D3 is connected with a resistor R6 in parallel, the anode of a rectifier diode D3 is electrically connected with one ends of a capacitor C2 and a resistor R7, the other end of the capacitor C2 is grounded, and the other end of the resistor R7 is connected with a VCC 3.
The utility model has the advantages that:
1. the utility model adopts the metal post as the resonance unit, and has lower loss and large power capacity compared with the original filter; therefore, the system can stably work in a complex environment, and is a better choice especially in a military communication system with special requirements.
2. The utility model discloses in, external controlgear sends high level control signal or low level control signal to IO port, send to digital control circuit through the IO port in, digital control circuit control frequency modulation filter switches on or does not switch on, control starts efficiently, and utilize first resonance metal post, second resonance metal post as the resonance unit, make this wave filter can bear bigger power, its zener diode Q value is much bigger than traditional SMD inductance moreover, the loss is littleer.
Drawings
Fig. 1 is a schematic structural diagram of a metal pillar fm filter provided in the present application.
Fig. 2 is a circuit diagram of a digital control circuit according to the present application.
Detailed Description
To make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the embodiments of the present invention are combined to clearly and completely describe the technical solution in the embodiments of the present invention, and obviously, the described embodiments are some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Fig. 1 is the structure schematic diagram of the metal post frequency modulation filter that this application provided, like fig. 1, a metal post frequency hopping filter, including radio frequency circuit, PIN diode resonant capacitor array, digital control circuit, radio frequency circuit and PIN diode resonant capacitor electric connection, PIN diode resonant capacitor electric connection and digital control circuit electric connection.
Preferably, in this embodiment, the Radio FreQuency circuit includes an RFIN interface (Radio FreQuency component in, a Radio FreQuency signal input interface), a first matching inductor, a first resonant metal pillar, a second matching inductor, and an RFOUT interface (Radio FreQuency component out, a Radio FreQuency signal output interface), where the RFIN interface is electrically connected to the first matching inductor, the first matching inductor is electrically connected to the first resonant metal pillar, the first resonant metal pillar is spatially coupled to the second resonant metal pillar, and the first resonant metal pillar and the second resonant metal pillar are connected to an inner surface (not shown) on the top of the filter package box, the second resonant metal pillar is electrically connected to the second matching inductor, and the second matching inductor is connected to the RFOUT interface.
When using the PIN diode, should select the PIN diode that junction capacitance is little as far as possible, help reducing the loss like this, set up first resonance metal post, second resonance metal post as the resonance unit simultaneously, have lower loss, advantage that power capacity is big, stability is high moreover, has fully solved among the traditional frequency hopping filter that power capacity is little, poor stability, the poor problem of loss.
Further, in this embodiment, the first resonant metal pillar and the second resonant metal pillar are electrically connected to the diode resonant capacitor array.
In this embodiment, the digital control circuit is located on the circuit board, and the first resonant metal pillar and the second resonant metal pillar may be made of metal alloy or pure metal, and in this embodiment, pure copper is preferred.
Fig. 2 is a circuit diagram of a digital control circuit in the present application, as shown in fig. 2, the digital control circuit includes a power supply VCC1, a power supply VCC2, an inductor L, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a zener diode Q1, a zener diode Q2, a zener diode Q3, a zener diode Q4, a zener diode Q5, a zener diode Q6, a zener diode Q7, a zener diode Q8, a zener diode Q9, a rectifier diode 1, a MOS transistor T1, a MOS transistor T2, a MOS transistor T3, and a switch circuit, one end of the resistor R1 is electrically connected to one end of the resistor R2 and is also connected to an I/0 port, and is communicatively connected to an external control device through an I/O port.
The other end of the resistor R2 is electrically connected with the cathode of a voltage stabilizing diode Q1 and the grid of an MOS tube T1, the anode of the voltage stabilizing diode Q1 is electrically connected with the anode of a voltage stabilizing diode Q2, the cathode of the voltage stabilizing diode Q2 is electrically connected with the anode of a voltage stabilizing diode Q3, the cathode of the voltage stabilizing diode Q3 is electrically connected with the drain of the MOS tube T1, the source of the MOS tube T1 is electrically connected with the substrate, and one end of the MOS tube T1, which is connected with the source and the substrate, is electrically connected with a power VCC 1;
the drain of the MOS transistor T1 is electrically connected to one end of a resistor R3, the gate of the MOS transistor T2, and the cathode of a rectifier diode D1, the other end of the resistor R3 is electrically connected to one end of a resistor R4 and is connected to a power source VCC2, the other end of the resistor R4 is electrically connected to the drain of the MOS transistor T2 and the cathode of a zener diode Q6, the gate of the MOS transistor T2 is also electrically connected to the cathode of the rectifier diode D1, the substrate of the MOS transistor T2 is electrically connected to the source, the electrically connected end of the substrate of the MOS transistor T2 to the source is electrically connected to the anode of the rectifier diode D1 and to one end of an inductor L, and the other end of the inductor L is electrically connected to the switch circuit;
the other end of the resistor R1 is electrically connected with the grid of the MOS tube T3 and the cathode of the zener diode Q7, the anode of the zener diode Q7 is electrically connected with the anode of the zener diode Q8, the cathode of the zener diode Q8 is electrically connected with the anode of the zener diode Q9, the cathode of the zener diode Q9 is electrically connected with the drain of the MOS tube T3, one end of the cathode of the zener diode Q9, which is connected with the drain of the MOS tube T3, is connected with the inductor L, the substrate of the MOS tube T3 is electrically connected with the source, and one end of the substrate of the MOS tube T3, which is connected with the source, is connected with the power supply VCC 1.
Preferably, in this embodiment, the resistances of the resistor R1 and the resistor R2 are 2.4K Ω, the resistance of the resistor R2 is 1M Ω, the resistance of the resistor R4 is 1.2K Ω, the types of the MOS transistor T1, the MOS transistor T2, and the MOS transistor T3 are STL2N80K5, the power source VCC1 is-3.3V, and the voltage VCC2 can provide high voltage.
The switch circuit comprises a resistor R5, a resistor R6, a resistor R7, a capacitor C1, a capacitor C2, a capacitor C3, a rectifier diode D2 and a rectifier diode D3;
the other end of the inductor is electrically connected with one end of a capacitor C1, the other end of the capacitor C1 is grounded, one end of a capacitor C1 connected with the inductor L is also electrically connected with the anode of a rectifier diode D2, the rectifier diode D2 is connected with a resistor R5 in parallel, the anode of a rectifier diode D2 is electrically connected with one end of a capacitor C3 and the cathode of a rectifier diode D3, the other end of a capacitor C3 is electrically connected with a resonant capacitor, the rectifier diode D3 is connected with a resistor R6 in parallel, the anode of a rectifier diode D3 is electrically connected with one ends of a capacitor C2 and a resistor R7, the other end of the capacitor C2 is grounded, and the other end of the resistor R7 is connected with a VCC 3.
The working principle is as follows: external control equipment sends high level control signal or low level control signal to the IO port, in sending to digital control circuit through the IO port, digital control circuit control frequency modulation filter switches on or does not switch on, control start efficiency is high, and utilize first resonance metal post, second resonance metal post as the resonance unit for this wave filter can bear bigger power, and its zener diode Q value is more than traditional SMD inductance a lot more, and the loss is littleer.
The above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.

Claims (7)

1. A metal pillar frequency hopping filter is characterized by comprising a radio frequency circuit, a PIN diode resonant capacitor array and a digital control circuit, wherein the radio frequency circuit is electrically connected with the PIN diode resonant capacitor, and the PIN diode resonant capacitor is electrically connected with the digital control circuit; wherein the content of the first and second substances,
the radio frequency circuit comprises an RFIN interface, a first matching inductor, a first resonant metal column, a second matching inductor and an RFout interface, wherein the RFIN interface is electrically connected with the first matching inductor, the first matching inductor is electrically connected with the first resonant metal column, the first resonant metal column and the second resonant metal column are coupled through space, the first resonant metal column and the second resonant metal column are connected with the inner surface of the top of a packaging box body of the filter, the second resonant metal column is electrically connected with the second matching inductor, and the second matching inductor is electrically connected with the RFout interface.
2. The metal pillar frequency hopping filter according to claim 1, wherein the first and second resonant metal pillars are electrically connected to a diode resonant capacitor array.
3. The metal pillar frequency hopping filter according to claim 1, wherein said digital control circuit is located on a circuit board.
4. The metal pillar frequency hopping filter according to claim 1, wherein the digital control circuit includes a power source VCC1, a power source VCC2, an inductor L, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a zener diode Q1, a zener diode Q2, a zener diode Q3, a zener diode Q4, a zener diode Q5, a zener diode Q6, a zener diode Q7, a zener diode Q8, a zener diode Q9, a rectifier diode D1, a MOS transistor T1, a MOS transistor T2, a MOS transistor T3, and a switching circuit, wherein;
one end of the resistor R1 is electrically connected with one end of the resistor R2, is connected with the I/0 port, and is in communication connection with external control equipment through the I/O port;
the other end of the resistor R2 is electrically connected with the cathode of a voltage stabilizing diode Q1 and the grid of an MOS tube T1, the anode of the voltage stabilizing diode Q1 is electrically connected with the anode of a voltage stabilizing diode Q2, the cathode of the voltage stabilizing diode Q2 is electrically connected with the anode of a voltage stabilizing diode Q3, the cathode of the voltage stabilizing diode Q3 is electrically connected with the drain of the MOS tube T1, the source of the MOS tube T1 is electrically connected with the substrate, and one end of the MOS tube T1, which is connected with the source and the substrate, is electrically connected with a power VCC 1;
the drain of the MOS transistor T1 is electrically connected to one end of a resistor R3, the gate of the MOS transistor T2, and the cathode of a rectifier diode D1, the other end of the resistor R3 is electrically connected to one end of a resistor R4 and is connected to a power source VCC2, the other end of the resistor R4 is electrically connected to the drain of the MOS transistor T2 and the cathode of a zener diode Q6, the gate of the MOS transistor T2 is also electrically connected to the cathode of the rectifier diode D1, the substrate of the MOS transistor T2 is electrically connected to the source, the electrically connected end of the substrate of the MOS transistor T2 to the source is electrically connected to the anode of the rectifier diode D1 and to one end of an inductor L, and the other end of the inductor L is electrically connected to the switch circuit;
the other end of the resistor R1 is electrically connected with the grid of the MOS tube T3 and the cathode of the zener diode Q7, the anode of the zener diode Q7 is electrically connected with the anode of the zener diode Q8, the cathode of the zener diode Q8 is electrically connected with the anode of the zener diode Q9, the cathode of the zener diode Q9 is electrically connected with the drain of the MOS tube T3, one end of the cathode of the zener diode Q9, which is connected with the drain of the MOS tube T3, is connected with the inductor L, the substrate of the MOS tube T3 is electrically connected with the source, and one end of the substrate of the MOS tube T3, which is connected with the source, is connected with the power supply VCC 1.
5. The metal pillar hopping filter of claim 4, wherein the resistances of the resistors R1 and R2 are 2.4K Ω, the resistance of the resistor R3 is 1M Ω, and the resistance of the resistor R4 is 1.2K Ω.
6. The metal pillar hopping filter of claim 4, wherein the model of said MOS transistor T1, MOS transistor T2, MOS transistor T3 is STL2N80K5, and said power source VCC1 is-3.3V.
7. The metal pillar frequency hopping filter according to claim 4, wherein said switching circuit comprises a resistor R5, a resistor R6, a resistor R7, a capacitor C1, a capacitor C2, a capacitor C3, a rectifier diode D2, a rectifier diode D3; wherein;
the other end of the inductor is electrically connected with one end of a capacitor C1, the other end of the capacitor C1 is grounded, one end of a capacitor C1 connected with the inductor L is also electrically connected with the anode of a rectifier diode D2, the rectifier diode D2 is connected with a resistor R5 in parallel, the anode of a rectifier diode D2 is electrically connected with one end of a capacitor C3 and the cathode of a rectifier diode D3, the other end of a capacitor C3 is electrically connected with a resonant capacitor, the rectifier diode D3 is connected with a resistor R6 in parallel, the anode of a rectifier diode D3 is electrically connected with one ends of a capacitor C2 and a resistor R7, the other end of the capacitor C2 is grounded, and the other end of the resistor R7 is connected with a VCC 3.
CN201921610477.6U 2019-09-25 2019-09-25 Metal post frequency hopping filter Active CN210380794U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201921610477.6U CN210380794U (en) 2019-09-25 2019-09-25 Metal post frequency hopping filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201921610477.6U CN210380794U (en) 2019-09-25 2019-09-25 Metal post frequency hopping filter

Publications (1)

Publication Number Publication Date
CN210380794U true CN210380794U (en) 2020-04-21

Family

ID=70255482

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201921610477.6U Active CN210380794U (en) 2019-09-25 2019-09-25 Metal post frequency hopping filter

Country Status (1)

Country Link
CN (1) CN210380794U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111884628A (en) * 2020-07-30 2020-11-03 武汉博畅通信设备有限责任公司 Negative high-voltage driving circuit of PIN diode
CN111988012A (en) * 2020-08-24 2020-11-24 武汉博畅通信设备有限责任公司 270-plus 678MHz frequency hopping filter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111884628A (en) * 2020-07-30 2020-11-03 武汉博畅通信设备有限责任公司 Negative high-voltage driving circuit of PIN diode
CN111988012A (en) * 2020-08-24 2020-11-24 武汉博畅通信设备有限责任公司 270-plus 678MHz frequency hopping filter

Similar Documents

Publication Publication Date Title
CN203135865U (en) Mobile terminal for alleviating interference of LTE (Long Term Evolution) emission in GPS (Global Position System)
CN210380794U (en) Metal post frequency hopping filter
CN104579189A (en) Circuit structure for improving harmonic performance of radio frequency power amplifier
CN105375906A (en) Amplitude limiting unit circuit, installation device, single-stage amplitude limiting circuit, and amplitude limiting device
CN205212817U (en) Broadband frequency agility frequency synthesizer
CN103152003B (en) Ultra wide band electrically tunable band-pass filter group and control method for frequency thereof
CN205232171U (en) Electronic tuning wave filter and terminal equipment
CN107707293A (en) Signal enhancing device for ship electronic clearance
CN218734299U (en) Carrier aggregation circuit suitable for radio frequency front-end module
CN106209018A (en) A kind of high-power band filter of ground radar
CN206564581U (en) The integrated transmission power distributor circuit of millimeter-wave monolithic
CN205212801U (en) Electrically tunable filter
CN204013440U (en) V-band high-power frequency hopping co-site filter
CN1212563A (en) Integrated circuit for frequency modulation
CN209030212U (en) A kind of NB-IoT data transmission module and NB-IoT data transmit chip
CN203261300U (en) Radio-frequency variable attenuator
CN209088930U (en) RF Amplifier Module and communication terminal
CN205039792U (en) Microwave frequency band electronic switch and radio frequency front end circuit thereof
CN203071232U (en) Mobile terminal
CN112953395A (en) Inverse F-class voltage-controlled oscillator and chip
CN208820684U (en) A kind of power inverter based on switching capacity and division driving transformer
CN202513878U (en) Millimeter wave active frequency multiplier integrated circuit
CN203423659U (en) Ultrashort wave common address filter
CN105577172B (en) Antidetonation constant temperature Low phase noise locks phase reference source
CN220359156U (en) Automatic switching circuit of radio frequency channel and radio frequency equipment

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant