CN210349877U - Low heat leakage Peltier current lead device - Google Patents
Low heat leakage Peltier current lead device Download PDFInfo
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- CN210349877U CN210349877U CN201921225328.8U CN201921225328U CN210349877U CN 210349877 U CN210349877 U CN 210349877U CN 201921225328 U CN201921225328 U CN 201921225328U CN 210349877 U CN210349877 U CN 210349877U
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- peltier
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052802 copper Inorganic materials 0.000 claims abstract description 55
- 239000010949 copper Substances 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 40
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 30
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 30
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 238000003466 welding Methods 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The application discloses low heat leakage Peltier current lead device includes: a thermoelectric element segment and a metal lead segment disposed at a normal temperature end of the lead device; the thermoelectric element section comprises a plurality of Peltier units which are uniformly distributed, and the Peltier units are sequentially connected in parallel on the same circumference; the Peltier unit is formed by welding a bismuth telluride and a copper connecting block; the metal lead segments connect the thermoelectric element segments and the superconducting devices. According to the low heat leakage Peltier current lead device, the current lead formed by the thermoelectric material bismuth telluride is inserted into the existing copper lead, so that the heat at the low-temperature end of the current lead can be transferred to the room-temperature end when the current lead passes through the current, and the heat leakage caused by the current lead can be reduced when no current flows because the heat conductivity of the bismuth telluride material is only 0.4% of that of the copper material, so that the device can reduce the heat leakage of the current lead when no current flows.
Description
Technical Field
The application belongs to the technical field of current lead application in a superconducting direct current device, and particularly relates to a low heat leakage Peltier current lead device.
Background
Along with the rapid development of national economy, the demand of people on electric power is continuously increased, people put forward higher and higher requirements on the safety, the economy and the quality of electric energy of a power system, the application of a superconducting technology can overcome the inherent defects of the conventional power technology, more and more superconducting devices are applied to the power system and are used as a main heat leakage source of the superconducting device which has a larger crossing temperature zone for connecting the superconducting device and a power supply lead and is a main heat leakage source of the superconducting device, and therefore, the reduction of heat leakage of a superconducting low-temperature system caused by the current lead is of great importance to the stable operation and the operation efficiency of the low-temperature system.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present application provides a low heat leakage peltier current lead device, which is capable of transferring heat at a low temperature end of a current lead to a room temperature end when the current lead passes current by inserting the current lead formed of a thermoelectric material bismuth telluride into an existing copper lead, and also capable of reducing heat leakage caused by the current lead when no current passes since the thermal conductivity of the bismuth telluride material is only 0.4% of that of the copper material, so that the device can reduce heat leakage of the current lead when no current passes.
The application provides a low heat leakage peltier current lead device, includes: a thermoelectric element segment and a metal lead segment disposed at a normal temperature end of the lead device;
the thermoelectric element section comprises a plurality of Peltier units which are uniformly distributed, and the Peltier units are sequentially connected in parallel on the same circumference;
the Peltier unit is formed by welding a bismuth telluride and a copper connecting block;
the metal lead segments connect the thermoelectric element segments and the superconducting devices.
Preferably, the number of peltier cells is in particular 12.
Preferably, the plurality of peltier units are connected in parallel on a copper base, and the plurality of peltier units are all welded with the copper base.
Preferably, the welding material of the plurality of Peltier units and the copper base is tin.
Preferably, the material of the metal lead segment is oxygen-free copper with RRR of 100.
Preferably, the peltier cell uses indium as a solder material.
Preferably, the aluminum plate is the same as the copper base in size and is fixedly connected with the plurality of Peltier units.
Preferably, still include a plurality of insulating post, a plurality of insulating post evenly distributed be in on the aluminum plate, be used for fixed aluminum plate with the copper base.
In summary, the present application provides a low heat leak peltier current lead device comprising: a thermoelectric element segment and a metal lead segment disposed at a normal temperature end of the lead device; the thermoelectric element section comprises a plurality of Peltier units which are uniformly distributed, and the Peltier units are sequentially connected in parallel on the same circumference; the Peltier unit is formed by welding a bismuth telluride and a copper connecting block; the metal lead segments connect the thermoelectric element segments and the superconducting devices.
According to the low heat leakage Peltier current lead device, the current lead formed by the thermoelectric material bismuth telluride is inserted into the existing copper lead, so that the heat at the low-temperature end of the current lead can be transferred to the room-temperature end when the current lead passes through the current, and the heat leakage caused by the current lead can be reduced when no current flows because the heat conductivity of the bismuth telluride material is only 0.4% of that of the copper material, so that the device can reduce the heat leakage of the current lead when no current flows.
Drawings
Fig. 1 is a schematic structural diagram of a low heat leakage peltier current lead device provided by an embodiment of the present application;
fig. 2 is a schematic structural diagram of a peltier unit of a low heat leakage peltier current lead device provided by an embodiment of the present application;
fig. 3 is a schematic structural diagram of a single peltier unit of a low heat leakage peltier current lead device provided by an embodiment of the present application;
wherein the reference numbers are as follows:
1. a Peltier unit; 2. an insulating column; 3. an aluminum plate; 4. a copper base; 11. a copper connecting block; 12: bismuth telluride.
Detailed Description
The application provides a low heat leakage Peltier current lead device, through insert the current lead that is formed by thermoelectric material bismuth telluride at current lead, can be with the heat transfer of current lead low temperature end to room temperature end when the current lead passes through the electric current, and because bismuth telluride material's thermal conductivity is only 0.4% of copper material, when no electric current passes through, can reduce the heat leakage that the current lead caused equally, therefore the device can both reduce the heat leakage of current lead when having or not having the electric current.
The technical solutions of the embodiments of the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all, of the embodiments of the present application. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without any creative effort belong to the protection scope of the embodiments in the present application.
In the description of the embodiments of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the embodiments of the present application and simplifying the description, but do not indicate or imply that the referred devices or elements must have specific orientations, be configured in specific orientations, and operate, and thus, should not be construed as limiting the embodiments of the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present application, it should be noted that the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected unless explicitly stated or limited otherwise; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. Specific meanings of the above terms in the embodiments of the present application can be understood in specific cases by those of ordinary skill in the art.
In recent years, optimization work for a current lead connecting a superconducting device and a power supply has been carried out, and a peltier current lead applied to a superconducting direct current device, which is a current lead formed by inserting a thermoelectric material bismuth telluride at a room temperature end of a conventional copper current lead, can effectively reduce heat leakage of the current lead. The peltier current lead, when passing current, can draw heat from the low temperature end of the current lead to the room temperature end due to the peltier current lead heat pump action. Because the thermoelectric material bismuth telluride has lower thermal conductivity which is only 0.4 percent of that of the copper material, when no current flows, the thermoelectric material bismuth telluride also can effectively reduce heat leakage caused by current leads due to the lower thermal conductivity.
Referring to fig. 1-3, fig. 1 is a schematic structural diagram of a low heat leakage peltier current lead device according to an embodiment of the present application; fig. 2 is a schematic structural diagram of a peltier unit of a low heat leakage peltier current lead device provided by an embodiment of the present application; fig. 3 is a schematic structural diagram of a single peltier unit of a low heat leakage peltier current lead device provided by an embodiment of the present application;
the application provides a low heat leakage peltier current lead device, includes: a thermoelectric element segment and a metal lead segment disposed at a normal temperature end of the lead device;
the thermoelectric element section comprises a plurality of Peltier units 1 which are uniformly distributed, and the Peltier units 1 are sequentially connected in parallel on the same circumference;
the Peltier unit 1 is formed by welding a bismuth telluride 12 and a copper connecting block 11;
the metal lead segments connect the thermoelectric element segments and the superconducting devices.
It should be noted that the low heat leakage peltier current lead device provided in the embodiment of the present application is based on a low heat leakage peltier current lead structure with a large current carrying capacity applied to a superconducting direct current device, and is a current lead formed by uniformly distributing and connecting a plurality of peltier elements in parallel on the basis of the peltier unit 1 formed by welding the copper connection block 11 and the thermoelectric material bismuth telluride 12 together, which can not only effectively reduce the heat leakage value of the current lead, but also improve the current carrying density of the current lead, and is suitable for a large current carrying superconducting device. The low heat leakage Peltier current lead device is composed of a thermoelectric element section and a metal lead section, the thermoelectric element section is formed by connecting a plurality of Peltier units 1 with the same structure in parallel on the same circumference, and all the Peltier units 1 and the copper base 4 are welded by adopting metal tin. The specific manufacturing method of the peltier unit 1 is as follows: the optimal length and cross section ratio of the thermoelectric material bismuth telluride 12 in the Peltier current lead are determined, the safe current-carrying density and the proper size of the thermoelectric material bismuth telluride 12 are selected, and the copper connecting block 11 with the proper size is selected to be welded with the thermoelectric material bismuth telluride 12 to form the Peltier unit 1 according to the current design value of the Peltier current lead.
The low heat leakage of the peltier unit 1 is embodied in that the thermoelectric material bismuth telluride 12 has low thermal conductivity which is only 0.4% of copper, so that the thermoelectric material bismuth telluride can play a role in thermal insulation, and meanwhile, the n-type bismuth telluride 12 and the p-type bismuth telluride 12 form a pair of thermocouples when direct current is conducted, so that the thermoelectric material bismuth telluride has a function of a heat pump, heat at a low temperature end can be pumped to a room temperature end, and the heat leakage of a current lead can be effectively reduced.
Specific heat flow in the peltier current lead is detailed in fig. 1, which illustrates the basic principle of the optimized design of the lead segments in a low leakage peltier current lead device: the low leakage heat Peltier current lead device mainly comprises a thermoelectric element section and a copper lead section. A single low leakage thermal peltier current lead device is optimally designed with a minimum leakage target. Subscripts H, I and J represent the room temperature end, the thermoelectric element and metal lead interface, and the copper lead low temperature section, respectively. Thermoelectric element segment and copper lead segment contact surface T1Is a variable that affects the leakage heat value at the low temperature end of the copper lead.
The heat Q and current I flowing through the peltier current lead are then given by the following formula:
wherein α, ρ and k are Seebeck coefficient, resistivity and thermal conductivity of the current lead material, respectively.A is cross-sectional area, V is electromotive force. α is preceded by a sign of "+" for an n-type thermoelectric element and "-" for a p-type thermoelectric element.
The embodiments of the present application only consider n-type thermoelectric materials, whose parameters α are independent of temperature, as shown in FIG. 1, for a tiny cell, the one-dimensional energy balance equation is:
dQ+IdV＝0 (3)
the simultaneous equations can then yield:
the simultaneous formula eliminates dx and yields:
(Q+αIT)d(Q+αIT)＝-ρkI2dT (5)
respectively carrying out optimization design on thermoelectric element sections and copper lead sections which form the low heat leakage Peltier current lead device by obtaining the formula to obtain the optimal geometric parameters and the optimal contact surface temperature T of a single lead sectionISo that the heat leakage value of the peltier current lead is minimized.
Further, the number of peltier units 1 is specifically 12.
It should be noted that the number of the peltier units 1 in the specific embodiment of the present application is 12, and the specific number of the peltier units 1 may be increased or decreased according to the actual application. Every two Peltier units 1 of the 12 Peltier units 1 are connected in parallel, and are surrounded and fixed on the copper base 4.
Further, a plurality of peltier units 1 are connected in parallel on the copper base 4, and the plurality of peltier units 1 are all welded with the copper base 4.
Note that all the peltier units 1 are soldered to the copper base 4.
Further, the soldering material of the plurality of peltier units 1 and the copper base 4 is tin.
Note that all the peltier units 1 are soldered to the copper base 4 by a tin material.
Further, the material of the metal lead segment is specifically oxygen-free copper with RRR of 100.
The metal lead segment is made of oxygen-free copper with RRR of 100.
Further, the peltier unit 1 employs indium as a solder material.
Note that each peltier unit 1 uses indium metal as a solder material, and the copper connection block 11 and the thermoelectric material bismuth telluride 12 are soldered together. Referring to fig. 3, it can be seen that the peltier unit 1 is formed by a copper connection block 11 and a thermoelectric material bismuth telluride 12 which are welded together via indium metal.
Further, still include aluminum plate 3, aluminum plate 3 size and copper base 4 are the same, and with a plurality of Peltier units 1 fixed connection.
It should be noted that the low heat leakage peltier current lead device provided in the embodiment of the present application is further provided with an aluminum plate 3 for fixing all peltier units 1, the aluminum plate 3 has the same size as the round copper base 4 and is located above the round copper base 4, and all peltier units 1 penetrate through the aluminum plate 3.
Further, still include a plurality of insulating cylinder 2, a plurality of insulating cylinder 2 evenly distributed is on aluminum plate 3 for fixed aluminum plate 3 and copper base 4.
It should be noted that, the aluminum plate 3 is also uniformly distributed with the insulating columns 2, and the insulating columns 2 are used for fixing the aluminum plate 3 and the copper base 4. Fig. 2 is a schematic structural diagram of a peltier unit 1 of a low heat leakage peltier current lead device provided by an embodiment of the present application, and the low heat leakage peltier current lead device is composed of a thermoelectric element section and a copper lead section. The thermoelectric element section is formed by connecting 12 Peltier units 1 in parallel on the same circumference, the 12 Peltier units 1 are welded on a copper base 4 through metal soldering tin, and meanwhile, an insulating column 2 and an aluminum plate 3 are used for reinforcing the Peltier device, so that the axial mechanical strength of the Peltier device is enhanced. The peltier device is formed by welding the copper connecting block 11 and the thermoelectric material bismuth telluride 12 together through indium, and is relatively weak in the axial direction, so that the strength in the axial direction needs to be enhanced. The plurality of Peltier units 1 are connected in parallel, so that the current carrying density of the current lead is improved, and due to the low resistance of the thermoelectric material bismuth telluride 12 and the characteristics of the heat pump, when current passes through the current lead, the heat at the low temperature end is pumped to the room temperature end under the action of the heat pump to reduce the heat leakage value of the current lead, so that the current carrying density can be improved, and the heat leakage value can be effectively reduced.
The above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.
Claims (8)
1. A low heat leak peltier current lead device comprising: a thermoelectric element segment and a metal lead segment disposed at a normal temperature end of the lead device;
the thermoelectric element section comprises a plurality of Peltier units which are uniformly distributed, and the Peltier units are sequentially connected in parallel on the same circumference;
the Peltier unit is formed by welding a bismuth telluride and a copper connecting block;
the metal lead segments connect the thermoelectric element segments and the superconducting devices.
2. A low heat leak peltier current lead arrangement according to claim 1, characterized in that the number of peltier cells is in particular 12.
3. The low heat leak peltier current lead device of claim 1 wherein the plurality of peltier cells are connected in parallel on a copper base, the plurality of peltier cells each being soldered to the copper base.
4. The low heat leakage peltier current lead device of claim 3 wherein the solder material of the plurality of peltier cells and the copper base is tin.
5. A low heat leakage peltier current lead device according to claim 1, characterized in that the material of said metal lead segments is in particular oxygen free copper RRR-100.
6. The low heat leak peltier current lead arrangement according to claim 1, wherein the peltier cell uses indium as a solder material.
7. The low heat leakage peltier current lead device of claim 3 further comprising an aluminum plate, the aluminum plate being the same size as the copper base and being fixedly connected to the plurality of peltier units.
8. The low heat leak peltier current lead arrangement of claim 7, further comprising a plurality of insulating posts evenly distributed on the aluminum plate for securing the aluminum plate and the copper base.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921225328.8U CN210349877U (en) | 2019-07-31 | 2019-07-31 | Low heat leakage Peltier current lead device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921225328.8U CN210349877U (en) | 2019-07-31 | 2019-07-31 | Low heat leakage Peltier current lead device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110323325A (en) * | 2019-07-31 | 2019-10-11 | 广东电网有限责任公司 | A kind of hot Peltier current lead device of low drain |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110323325A (en) * | 2019-07-31 | 2019-10-11 | 广东电网有限责任公司 | A kind of hot Peltier current lead device of low drain |
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