CN210349789U - Wafer curvature adjusting device - Google Patents
Wafer curvature adjusting device Download PDFInfo
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- CN210349789U CN210349789U CN201921613723.3U CN201921613723U CN210349789U CN 210349789 U CN210349789 U CN 210349789U CN 201921613723 U CN201921613723 U CN 201921613723U CN 210349789 U CN210349789 U CN 210349789U
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Abstract
An embodiment of the utility model provides a wafer curvature adjusting device, include: the fixed body is arranged on the film deposition equipment; when the film deposition equipment is used for depositing a film on the back surface of the wafer, the wafer is arranged on the fixed body; a heating member disposed on the fixing body; when the film is deposited on the back surface of the wafer, the heating part is heated to adjust the thickness of the film deposited on the back surface of the wafer in the first direction, so that the curvature of the wafer in the first direction is adjusted. Thus, the curvature of the wafer in a certain specific direction can be adjusted.
Description
Technical Field
The utility model relates to the field of semiconductor technology, especially, relate to a wafer curvature adjusting device.
Background
During the semiconductor manufacturing process, the wafer bending (bow) is too large, which causes the capacitive impedance of the plasma to be abnormal during the chemical vapor deposition process, thereby generating arc discharge (arc). Arcing not only affects the yield of the product itself, but also risks damaging the hardware facilities that execute the associated process tools. Therefore, the method has great economic benefit and research value in a reasonable range for controlling the wafer curvature.
Depositing films with different stress characteristics on the back surface of a wafer (expressed in the industry as the wafer back surface) is an effective method for changing the wafer curvature. As shown in fig. 1a, depositing a high tensile stress silicon nitride (SiN) film on the back of the wafer can reduce the forward curvature of the wafer; as shown in FIG. 1b, high-stress silicon oxide (SiO) is deposited on the back of the wafer2) The film can reduce the negative curvature of the wafer. However, in the related art, the wafer curvature can be adjusted only by taking the plane of the wafer surface as a unit. The adjustment direction cannot be selected, that is, the wafer curvature can be adjusted to a specific direction on the plane of the wafer surface.
SUMMERY OF THE UTILITY MODEL
For solving the related technical problem, the embodiment of the utility model provides a wafer curvature adjusting device can realize the adjustment of the crookedness of wafer in certain specific side.
An embodiment of the utility model provides a wafer curvature adjusting device, include:
the fixed body is arranged on the film deposition equipment; when the film deposition equipment is used for depositing a film on the back surface of the wafer, the wafer is arranged on the fixed body;
a heating member disposed on the fixing body; when the film is deposited on the back surface of the wafer, the heating part is heated to adjust the thickness of the film deposited on the back surface of the wafer in the first direction, so that the curvature of the wafer in the first direction is adjusted.
In the above scheme, the heating part at least comprises two heating sub-parts; the at least two heating sub-components are arranged in a first direction in the fixing body according to a preset rule.
In the above solution, the at least two heating sub-assemblies are symmetrically arranged in the first direction.
In the above scheme, the fixing body has a hollow structure; the wafer is arranged on the upper surface of the fixed body; the back surface of the wafer is in contact with the upper surface of the fixed body.
In the above aspect, the heating member is disposed in the hollow structure.
In the above scheme, an accommodating space is arranged on the inner wall of the hollow structure, and the heating component is arranged in the accommodating space.
In the above aspect, the heating member is disposed on an upper surface of the hollow structure.
In the above scheme, the upper surface of the hollow structure is provided with a groove structure; the heating member is disposed on an upper surface of the hollow structure through the groove structure.
In the above aspect, the heating member is disposed on a lower surface of the hollow structure.
In the above scheme, the heating member is arranged on the fixing body in an adhesion mode.
An embodiment of the utility model provides a wafer curvature adjusting device, include: the fixed body is arranged on the film deposition equipment; when the film deposition equipment deposits a film on the back surface of the wafer, the wafer is arranged on the fixed body; a heating member disposed on the fixing body; when the film is deposited on the back surface of the wafer, the heating part is heated to adjust the thickness of the film deposited on the back surface of the wafer in the first direction, so that the curvature of the wafer in the first direction is adjusted. The embodiment of the utility model provides a during wafer back deposit film, through heating the heater block can adjust the temperature distribution of wafer along specific direction, makes the film different at the wafer along the ascending deposition rate of specific side through the difference of wafer along specific direction temperature to make the deposit be in the wafer back is last specific ascending film thickness of side different, so, can realize the adjustment of the crookedness of wafer in specific side.
Drawings
FIG. 1a is a schematic diagram illustrating a SiN film for adjusting the forward curvature of a wafer in a related art;
FIG. 1b shows the utilization of SiO in the related art2A schematic diagram of the negative curvature of the wafer adjusted by the film;
fig. 2 is a schematic structural diagram of a wafer curvature adjusting device according to an embodiment of the present invention;
FIG. 3 is a schematic view of a wafer bow adjusting apparatus according to an embodiment of the present invention, in which a fixing member is disposed on a thin film deposition device for performing thin film chemical vapor deposition;
FIG. 4 is a schematic view of the wafer according to an embodiment of the present invention in the X-axis direction or the Y-axis direction;
fig. 5a is a schematic view illustrating a position of a heating member in a wafer bow adjustment device according to an embodiment of the present invention;
fig. 5b is a schematic view of a temperature distribution on a surface of a wafer corresponding to a position where a heating member is disposed in a wafer bow adjustment device according to an embodiment of the present invention;
fig. 6a is a schematic diagram illustrating a temperature distribution curve of a wafer along an X-axis direction of a surface of the wafer according to an embodiment of the present invention;
fig. 6b is a schematic diagram of a film thickness distribution curve in the X-axis direction on the wafer surface deposited on the back surface of the wafer according to the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the drawings in the embodiments of the present invention will be combined below to describe in further detail the specific technical solutions of the present invention. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.
The utility model discloses in mentioned first direction or specific direction all can be the planar X axle direction or the Y axle direction of the surface place of the wafer of treating to carry out the crookedness adjustment.
In the related art, the wafer curvature can be adjusted only by taking the plane of the wafer surface as a unit, and the adjustment direction cannot be selected, that is, the wafer curvature is adjusted to be accurate to a certain specific direction on the plane of the wafer surface. However, in practical applications, the curvatures of the wafer in the X-axis direction and the Y-axis direction often differ, and only depositing a film uniformly on the back of the wafer can adjust the curvature of the wafer isotropically, and cannot adjust the curvature of the wafer in a specific direction alone. And films with different thicknesses are deposited at different positions of the wafer back, so that the curvature of the wafer can be adjusted at different positions.
Based on this, the utility model discloses an each embodiment is at the in-process that utilizes the crookedness of film deposition process adjustment wafer, adds the heater block on the specific position of the fixed body of placing the wafer, and the heating control wafer through the heater block is at the ascending temperature distribution of specific direction to the deposition rate of selective control film different positions on specific direction, thereby make the deposit different in the wafer back on the ascending film thickness of specific direction, finally realize the adjustment to the different crookedness on the specific direction of wafer.
Fig. 2 shows a structural composition diagram of a wafer curvature adjusting device according to an embodiment of the present invention, the wafer curvature adjusting device 200 according to an embodiment of the present invention includes: a fixed body 201 and a heating member 202; wherein the content of the first and second substances,
the fixed body 201 is arranged on the thin film deposition equipment; when the film deposition equipment is used for depositing a film on the back surface of the wafer, the wafer is arranged on the fixed body 201;
the heating part 202 is arranged on the fixing body 201; when a film is deposited on the back surface of the wafer, the heating component 202 is heated to adjust the thickness of the film deposited on the back surface of the wafer in the first direction, so as to adjust the curvature of the wafer in the first direction.
After the wafer is disposed on the fixing body 201, when a thin film is deposited on the back surface of the wafer by using a thin film deposition apparatus, the temperature distribution of the wafer along the first direction is changed by heating the heating member 202 disposed on the fixing body 201.
The fixing body 201 is a component for placing a wafer when the wafer is deposited by using a thin film deposition apparatus. In practical applications, the fixing body 201 is made of a material that is hard, does not react with the gas to be deposited, and is resistant to high temperature, such as ceramic.
Here, when the wafer is disposed on the fixing body 201, the back surface of the wafer is a surface located at the bottom of the wafer when the wafer is viewed from the front.
In one embodiment, the fixing body 201 has a hollow structure; the wafer is arranged on the upper surface of the fixed body; the back surface of the wafer is in contact with the upper surface of the fixed body.
Here, the fixing body 201 is horizontally disposed on the thin film deposition apparatus, and an upper surface of the fixing body 201 is a surface at the top of the fixing body in front view of the fixing body 201. The back of the wafer is subjected to thin film chemical vapor deposition through the hollow region of the hollow structure of the fixing body 201. Fig. 4 shows a schematic view of the fixed body 201 disposed on a thin film deposition apparatus for performing thin film chemical vapor deposition.
In practical applications, the shape of the fixing body 201 can be adjusted according to the shape of the wafer, for example, when the wafer has a circular structure, the fixing body 201 can have an annular structure. At this time, the inner diameter of the ring structure of the fixing body 201 should be slightly smaller than the outer diameter of the edge of the wafer, so that the wafer can rest on the fixing body 201.
In practical application, the film may be an SiN film capable of reducing the positive curvature of the wafer, or an SiO film capable of reducing the negative curvature of the wafer2The film can also be other films which can play a role in adjusting the wafer curvature.
The heating component 202 is a key component of the wafer bow adjusting apparatus 200, and the arrangement position, the fixing manner, and the constituent materials of the heating component 202 will be described in detail below.
With respect to the arrangement position of the heating member 202:
in practical application, the distribution of the wafer curvature along the first direction is considered as follows: the curvature of the middle position of the wafer is smaller, and the curvature of the position closer to the edge of the wafer is larger, so when the curvature is adjusted along the first direction, the adjustment degree along the first direction is also smaller in the curvature adjustment degree of the middle position of the wafer, and the adjustment degree of the curvature of the position closer to the edge of the wafer is larger.
In one embodiment, the heating component 202 comprises at least two heating sub-components; the at least two heating sub-assemblies are arranged in a first direction in the fixing body 201 according to a preset rule.
The preset rule is that the heating equipment is arranged at a corresponding position according to the difference of the wafer curvature adjustment degree (the higher the curvature adjustment degree is, the higher the temperature is required, the heater needs to be arranged at the position), for example, the position close to the edge of the wafer in the first direction is provided with two positions, and therefore at least two sub-heaters are required.
In practical applications, the number of the heating sub-components may be adjusted according to practical situations, and the heating component 202 may further include two or more heating sub-components, for example, the heating component 202 includes three or more heating sub-components; the two heating sub-components are arranged on the fixing body 201 side by side in a preset manner (the preset manner may be that the two heating sub-components are arranged on the upper surface of the fixing body 201, or one heating sub-component is arranged on the upper surface of the fixing body 201, and the other heating sub-component is arranged on the lower surface corresponding to the upper surface), and the other heating sub-component is arranged at a position, close to the edge of the wafer, of the other end in the first direction, and at the moment, the curvature adjustment degrees of the two edge positions of the wafer are different, and the curvature adjustment degree of one end of the two heating sub-components is larger than that of one end of the two heating sub-components.
In practical applications, after the relative arrangement orientation of the heating component 202 and the fixing body 201 is determined, the heating component 202 may be further disposed at different specific positions on the fixing body 201, which is a hollow structure, according to actual requirements.
In one embodiment, the heating member 202 is disposed in the hollow structure.
Here, the hollow structure is seen from the front, and is located inside the hollow structure.
In one embodiment, the heating member 202 is disposed on an upper surface of the hollow structure.
Here, the upper surface of the hollow structure is an outer surface at the top of the hollow structure in front view of the hollow structure.
In one embodiment, the heating element 202 is disposed on a lower surface of the hollow structure.
Here, the upper surface of the hollow structure is an outer surface of the bottom of the hollow structure in front view of the hollow structure.
In practical applications, the heating element 202 is disposed at a position where it does not directly contact the wafer in order to prevent damage to the wafer due to excessive temperature.
The fixing manner of the heating member 202:
the fixing manner of the heating component 202 is various, and can be selected according to actual requirements in actual application.
In one embodiment, the heating element 201 is disposed on the fixing body by bonding
In practical applications, the heating member 201 may be disposed in the hollow structure, or on the upper surface of the hollow structure, or on the lower surface of the hollow structure by means of adhesion.
In one embodiment, the fixing in the hollow structure may be: an accommodating space is formed in the hollow inner wall, and the heating member 202 is disposed in the accommodating space.
In one embodiment, the fixing means on the upper surface of the hollow structure may be: the upper surface of the hollow structure is provided with a groove structure; the heating member 202 is disposed on the upper surface of the hollow structure through the groove structure.
The fixation by means of gluing is simpler than other fixation means.
Regarding the constituent materials of the heating member 202:
in practical application, the heating part is a heating wire or a heating sheet. The material used for heating may be a metal wire, such as a copper wire, which can be used for heating.
An embodiment of the utility model provides a wafer curvature adjusting device, include: the fixed body is arranged on the film deposition equipment; when the film deposition equipment deposits a film on the back surface of the wafer, the wafer is arranged on the fixed body; a heating member disposed on the fixing body; when the film is deposited on the back surface of the wafer, the heating part is heated to adjust the thickness of the film deposited on the back surface of the wafer in the first direction, so that the curvature of the wafer in the first direction is adjusted. The embodiment of the utility model provides a during wafer back deposit film, through heating the heater block can adjust the temperature distribution of wafer along specific direction, makes the film different at the wafer along the ascending deposition rate of specific side through the difference of wafer along specific direction temperature to make the deposit be in the wafer back is last specific ascending film thickness of side different, so, can realize the adjustment of the crookedness of wafer in specific side.
In the embodiment of the utility model, an application scene is: the wafer is of a circular configuration, the holding member is of an annular configuration, and the first direction is the X-axis direction of the wafer surface as shown in fig. 4. The degree of curvature adjustment required to be carried out at the middle position of the wafer is small, the degree of curvature adjustment required to be carried out at the position closer to the edge of the wafer is larger, and the degree of curvature adjustment from the middle position of the wafer to the edge of the wafer is symmetrical. As shown in fig. 5a, the wafer bow adjusting device comprises a fixing body 201 and a heating member 202; wherein the content of the first and second substances,
after the wafer is disposed on the fixing body 201, when a thin film is deposited on the back surface of the wafer by using a thin film deposition apparatus, the temperature distribution of the wafer along the first direction is changed by heating the heating member 202 disposed on the fixing body 201.
In the present embodiment, as shown in fig. 5a, the heating component 202 comprises two heating sub-components; the two heating sub-assemblies are symmetrically arranged in a first direction. Thus, the temperature distribution of the wafer along the X-axis direction of the surface of the wafer can be as follows: the temperature at the edge of the wafer is higher than the temperature heated by the heater sub-assembly, the temperature is lower at the center of the wafer, and the temperature is the smallest at the center of the wafer (as shown in fig. 5 b).
In the embodiment of the utility model, the two heating sub-components are heating sheets made of copper wires; both heating sub-components are disposed on an upper surface of the ring structure; and both heating sub-assemblies are in a bonded manner on the upper surface of the ring-shaped structure.
When the temperature distribution of the wafer along the X-axis direction of the wafer surface is represented in a curve manner, as shown in fig. 6a, the temperature distribution of the wafer along the X-axis direction of the wafer surface is a U-shaped distribution. When the thickness of the film deposited on the back surface of the wafer in the X-axis direction of the wafer surface is represented in a curved manner, as shown in fig. 6b, the thickness distribution of the film deposited on the back surface of the wafer in the X-axis direction of the wafer surface is in a U-shaped distribution.
The embodiment of the utility model provides a during wafer back deposit film, through heating the heater block can make the wafer distribute for U type along the temperature distribution of wafer surface X axle direction, so that the deposit is in along the ascending film thickness U type of wafer surface X axle direction on the wafer back distributes, so, can realize along wafer surface X axle direction, the crookedness adjustment degree of wafer intermediate position is less, and the position crookedness adjustment degree that is close to the wafer edge more is big more. The utility model discloses the crookedness of wafer can be adjusted selectively in specific direction to the scheme, guarantees that the crookedness of wafer is in normal level to film deposition unusual probability in can the reduction production promotes the product yield, reduces equipment hardware maintenance cost.
In addition, the technical solutions described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (10)
1. A wafer bow adjustment apparatus, comprising:
the fixed body is arranged on the film deposition equipment; when the film deposition equipment is used for depositing a film on the back surface of the wafer, the wafer is arranged on the fixed body;
a heating member disposed on the fixing body; when the film is deposited on the back surface of the wafer, the heating part is heated to adjust the thickness of the film deposited on the back surface of the wafer in the first direction, so that the curvature of the wafer in the first direction is adjusted.
2. The apparatus of claim 1, wherein the heating means comprises at least two heating sub-components; the at least two heating sub-components are arranged in a first direction in the fixing body according to a preset rule.
3. The apparatus of claim 2, wherein the at least two heating sub-assemblies are symmetrically disposed in the first direction.
4. The device according to claim 1, characterized in that said fixed body has a hollow structure; the wafer is arranged on the upper surface of the fixed body; the back surface of the wafer is in contact with the upper surface of the fixed body.
5. The device of claim 4, wherein the heating member is disposed in the hollow structure.
6. The apparatus of claim 5, wherein an accommodating space is provided on an inner wall of the hollow structure, and the heating member is disposed in the accommodating space.
7. The device of claim 4, wherein the heating member is disposed on an upper surface of the hollow structure.
8. The device of claim 7, wherein the hollow structure has a groove structure on an upper surface thereof; the heating member is disposed on an upper surface of the hollow structure through the groove structure.
9. The device of claim 4, wherein the heating member is disposed on a lower surface of the hollow structure.
10. Device according to claim 5, 7 or 9, characterized in that the heating means are arranged on the fixing body by means of gluing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921613723.3U CN210349789U (en) | 2019-09-25 | 2019-09-25 | Wafer curvature adjusting device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921613723.3U CN210349789U (en) | 2019-09-25 | 2019-09-25 | Wafer curvature adjusting device |
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| CN210349789U true CN210349789U (en) | 2020-04-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078061A (en) * | 2021-03-24 | 2021-07-06 | 长江存储科技有限责任公司 | Wafer structure, preparation method thereof, three-dimensional memory and electronic equipment |
| CN113718232A (en) * | 2021-08-26 | 2021-11-30 | 长江存储科技有限责任公司 | Spray head, film forming control method, controller and machine |
| CN114318303A (en) * | 2021-12-24 | 2022-04-12 | 芯盟科技有限公司 | Semiconductor processing equipment and using method thereof |
-
2019
- 2019-09-25 CN CN201921613723.3U patent/CN210349789U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078061A (en) * | 2021-03-24 | 2021-07-06 | 长江存储科技有限责任公司 | Wafer structure, preparation method thereof, three-dimensional memory and electronic equipment |
| CN113078061B (en) * | 2021-03-24 | 2023-10-31 | 长江存储科技有限责任公司 | Wafer structure, preparation method thereof, three-dimensional memory and electronic equipment |
| CN113718232A (en) * | 2021-08-26 | 2021-11-30 | 长江存储科技有限责任公司 | Spray head, film forming control method, controller and machine |
| CN114318303A (en) * | 2021-12-24 | 2022-04-12 | 芯盟科技有限公司 | Semiconductor processing equipment and using method thereof |
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