CN210347975U - Dual-band infrared wave absorber - Google Patents
Dual-band infrared wave absorber Download PDFInfo
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- CN210347975U CN210347975U CN201921542854.7U CN201921542854U CN210347975U CN 210347975 U CN210347975 U CN 210347975U CN 201921542854 U CN201921542854 U CN 201921542854U CN 210347975 U CN210347975 U CN 210347975U
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 53
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052737 gold Inorganic materials 0.000 claims abstract description 17
- 239000010931 gold Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 38
- 229910021389 graphene Inorganic materials 0.000 claims description 38
- 230000009977 dual effect Effects 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 47
- 229910002804 graphite Inorganic materials 0.000 abstract description 9
- 239000010439 graphite Substances 0.000 abstract description 9
- -1 graphite alkene Chemical class 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 238000003491 array Methods 0.000 abstract description 4
- 230000009102 absorption Effects 0.000 description 46
- 230000010287 polarization Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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Abstract
The utility model provides a dual-band infrared wave absorber, inhale the ripples module including gold substrate layer, the silicon dioxide layer of range upon range of in gold substrate layer surface and set up in the setting of a plurality of arrays on silicon dioxide layer surface, it inhales ripples unit to have four groups, it all includes the black phosphorus layer that sets up in silicon dioxide layer surface and sets up the graphite alkene layer above black phosphorus layer to inhale the ripples unit, it has the hBN dielectric layer to fill between black phosphorus layer and the graphite alkene layer, black phosphorus layer and graphite alkene layer all are the semiellipse shape of forming with the major axis is the center bisection, black phosphorus layer and graphite alkene layer vertical projection coincide mutually in the plane of projection on silicon dioxide layer surface; the four wave absorbing units form a wave absorbing module with a square structure by taking the long axis of the semiellipse as the outer edge. The dual-band infrared wave absorber has anisotropy; the two absorption bands can be tuned by a chemical doping method; independent of the angle of incidence of the incident infrared light; easy processing.
Description
Technical Field
The utility model relates to an infrared wave-absorbing field, concretely relates to black phosphorus layer/graphite alkene layer's dual-band infrared wave absorber based on semiellipse shape structure.
Background
The traditional wave-absorbing material comprises conductive fiber, silicon carbide, metal iron powder and the like, has the characteristic of strong absorption, but often has larger volume. The metamaterial wave absorber can overcome the problems due to the sub-wavelength structure of the metamaterial wave absorber, and becomes a hot point of research in recent years. The metamaterial wave absorbers which are common at present are generally formed by metal super surfaces, such as gold, silver, copper, aluminum and the like. By utilizing the surface plasmon effect generated by the incident electromagnetic wave in the materials, the incident electromagnetic wave can be effectively absorbed, and even the perfect absorption effect can be achieved. However, due to the inherent characteristics of the metal material, the metamaterial wave absorber based on metal can only realize the tuning of the wave-absorbing frequency band by changing the geometric dimension of the structure, which is not beneficial to mass production of wave absorbers with various working frequency bands.
The problems can be overcome by introducing two-dimensional materials such as graphene and black phosphorus. The metamaterial wave absorber based on graphene or black phosphorus can change the carrier concentration of a material in a chemical doping mode, so that the wave absorption frequency band can be effectively tuned. However, the existing infrared absorber often has no anisotropy or only a single absorption frequency band, and is not suitable for large-scale processing and production due to the complex super-surface structure appearance.
SUMMERY OF THE UTILITY MODEL
Therefore, the utility model provides a black phosphorus layer/graphite alkene layer's dual-band infrared wave absorber based on semiellipse shape structure to solve above-mentioned problem.
In order to achieve the above purpose, the utility model provides a technical scheme as follows:
a dual-band infrared wave absorber comprises a gold substrate layer, a silicon dioxide layer stacked on the surface of the gold substrate layer and wave absorbing modules arranged on the surface of the silicon dioxide layer in a plurality of arrays, wherein each wave absorbing module is provided with four groups of wave absorbing units, each wave absorbing unit comprises a black phosphorus layer arranged on the surface of the silicon dioxide layer and a graphene layer arranged above the black phosphorus layer, an hBN (hexagonal boron nitride) medium layer is filled between the black phosphorus layer and the graphene layer, the black phosphorus layer and the graphene layer are semielliptical by bisecting the long axis as the center, and the projection planes of the black phosphorus layer and the graphene layer vertically projected on the surface of the silicon dioxide layer are overlapped; the four wave absorbing units form a wave absorbing module with a square structure by taking the long axis of the semiellipse as the outer edge.
Furthermore, the long axis outer edges of the wave absorbing units of adjacent wave absorbing modules are butted.
Furthermore, the thickness of the black phosphorus layer and the graphene layer is 0.35-1 nm.
Furthermore, the long axis size of the black phosphorus layer and the graphene layer is 80-120nm, and the short axis size is 42-72 nm.
Furthermore, the thickness of the hBN medium layer filled between the black phosphorus layer and the graphene layer is 5nm-20 nm.
Furthermore, the hBN dielectric layer also extends and is paved on the surface of the silicon dioxide layer.
Further, the thickness of the silicon dioxide layer is 1-1.6 μm.
Further, the thickness of the gold substrate layer is 2.8-5.2 μm.
Furthermore, the total thickness of the gold substrate layer/silicon dioxide layer/black phosphorus layer/hBN dielectric layer/graphene layer is 4.3-7.2 microns.
Through the utility model provides a technical scheme has following beneficial effect:
1, the utility model discloses structurally, adopt half oval-shaped inhale the wave unit (black phosphorus layer/graphite alkene layer) each other to become the structure of placing (make up the ripples module of inhaling that forms "mouth" font structure promptly), have better anisotropy and absorptivity than the present ripples ware that only adopts single material, and because half oval-shaped structure easily processes, need not complicated preparation technique.
2, the utility model has two absorption frequency bands functionally, and can independently tune the two absorption frequency bands by changing the long axis or the short axis of the semi-elliptical black phosphorus layer/graphene layer;
3, the utility model discloses in the function, owing to introduce graphite alkene and black phosphorus material, thus can tune the absorption frequency channel through changing the carrier doping concentration of graphite alkene or black phosphorus;
4, the utility model discloses in the performance, do not rely on the incident angle of incident infrared light, consequently still have better absorptivity to oblique incident infrared light.
Drawings
FIG. 1 is a schematic partial perspective view of a dual-band infrared absorber according to an embodiment;
FIG. 2 is a side view of a single wave absorbing module in the dual-band infrared wave absorber in the embodiment;
FIG. 3 is a top view of a single wave absorbing module in the dual-band infrared wave absorber in the embodiment;
FIG. 4 is a graph showing simulated absorption rate curves of the dual-band infrared absorber in the embodiment under different minor axis dimensions a;
FIG. 5 is a graph showing simulated absorption rate curves of the dual-band infrared absorber in the embodiment under different major axis dimensions b;
FIG. 6 is a graph showing simulated absorption rate curves of different chemical potentials of graphene under transverse electric waves in the example;
FIG. 7 is a graph showing simulated absorptance curves of different black phosphorus carrier concentrations under transverse electric waves in an example;
fig. 8 is a graph showing simulated absorption rate curves at different incident angles under the transverse electric wave in the example.
Detailed Description
To further illustrate the embodiments, the present invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. With these references, one of ordinary skill in the art will appreciate other possible embodiments and advantages of the present invention. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.
The present invention will now be further described with reference to the accompanying drawings and detailed description.
Example one
Referring to fig. 1 to 3, the dual-band infrared wave absorber provided in this embodiment includes a gold substrate layer 3, a silicon dioxide layer 2 stacked on the surface of the gold substrate layer 3, and wave absorbing modules arranged in a plurality of arrays on the surface of the silicon dioxide layer 2, where each wave absorbing module includes four wave absorbing units, each wave absorbing unit includes a black phosphorus layer 5 disposed on the surface of the silicon dioxide layer 2 and a graphene layer 4 disposed above the black phosphorus layer 5, a hBN (hexagonal boron nitride) dielectric layer 1 is filled between the black phosphorus layer 5 and the graphene layer 4, the black phosphorus layer 5 and the graphene layer 4 are semi-elliptic formed by bisecting each other with a long axis as a center, and projection planes of the black phosphorus layer 5 and the graphene layer 4 in a vertical projection on the surface of the silicon dioxide layer 2 coincide with each other, that is, sizes and positions of the black phosphorus layer 5 and the graphene layer 4 coincide with each; the four wave absorbing units form a wave absorbing module with a square-shaped structure by taking the major axis of the semiellipse as the outer edge, namely the major axes of the adjacent wave absorbing units are vertically arranged to form the square-shaped structure, and the minor half axes of the wave absorbing units extend inwards, as shown in fig. 3. The semi-elliptical structure is easy to process, does not need complex preparation technology, and is easy to realize large-scale processing production.
As shown in fig. 1, a schematic diagram of a partial three-dimensional structure of a dual-band infrared wave absorber is disclosed, that is, structures of two wave absorbing modules are disclosed, the outer edges of the major axes of the wave absorbing units of the adjacent wave absorbing modules are butted, and in each of the two wave absorbing modules, the outer edges of the major axes of one wave absorbing unit are oppositely arranged and connected to form a complete elliptical structure, such as a complete elliptical structure 41 formed by butting the outer edges of the major axes of one of the two wave absorbing modules in fig. 1; in the same way, in the wave-absorbing modules arranged in a plurality of arrays, two half ellipses butted with each other of adjacent wave-absorbing modules (such as adjacent up and down and adjacent left and right) form a complete elliptic structure 41 together. During preparation, the elliptical structure 41 can be directly prepared into an elliptical shape, two semi-elliptical structures do not need to be prepared respectively, and efficiency is improved. That is, the major axes of the plurality of complete elliptical structures 41 are arranged in an array along the X-axis and the Y-axis, respectively, to form a grid pattern.
Further, in this embodiment, the hBN dielectric layer 1 is further extended and laid on the surface of the silicon dioxide layer 2. During preparation, the black phosphorus layer 5 is firstly laid on the surface of the silicon dioxide layer 2, then the hBN dielectric layer 1 is laid on the outermost layer (namely the surface of the black phosphorus layer 5 and the surface of the exposed silicon dioxide layer 2), and finally the graphene layer 4 with the same size is laid on the position, right opposite to the black phosphorus layer 5, on the surface of the hBN dielectric layer 1. The manufacturing process is simple and convenient, and the pattern preparation of the hBN dielectric layer 1 is not needed. Of course, in other embodiments, the hBN dielectric layer 1 may be filled only between the black phosphorus layer 5 and the graphene layer 4.
Further, in this embodiment, the total thickness of the gold substrate layer 3/the silicon dioxide layer 2/the black phosphorus layer 5/the hBN dielectric layer 1/the graphene layer 4 is preferably 4.3 to 7.2 μm. Can realize good effect, and save the material cost.
Specifically, in this embodiment, the thickness of the gold substrate layer 3 is 5 μm, the thickness of the silicon dioxide layer 2 is 1.35 μm, the thickness of the hBN dielectric layer 1 is 5nm, and the thicknesses of the graphene layer 4 and the black phosphorus layer 5 are both 0.5 nm. The long axis size of the black phosphorus layer 5 and the graphene layer 4 is 80-120nm, the short axis size is 42-72nm, namely the short half axis size is 21-36 nm.
When infrared light is vertically incident, and under the incidence of transverse electric waves (TE polarization) and transverse magnetic waves (TMpolarization), different absorption spectrum characteristics are shown, the anisotropy is better, the absorption spectrum characteristics are both provided with a left absorption band and a right absorption band (namely, two wave peaks with higher absorption rate), most of the absorption rates are between 90% and 100%, and the absorption rates are better. By changing the minor axis size and the major axis size of the ellipse, the absorption spectrum curves shown in fig. 4 and fig. 5 can be obtained through simulation calculation respectively.
As shown in fig. 4, by changing the minor axis dimension a of the graphene layer 4 and the black phosphorus layer 5, specifically, the minor axis dimension a of the graphene layer 4 and the black phosphorus layer 5 at 42nm, 52nm and 62nm respectively, the right absorption band remains almost unchanged, the left absorption band can be independently tuned, i.e. when a transverse electric wave (TE polarization) is incident, the right absorption band remains in the interval of 12-16 μm, and the left absorption band has three independent absorption bands with larger interval; when transverse magnetic wave (TM polarization) is incident, the right absorption band is maintained in the interval of 14-18 μm, and the left absorption band has three independent absorption bands with large interval.
As shown in fig. 5, by changing the long axis dimension b of the graphene layer 4 and the black phosphorus layer 5, specifically, when the long axis dimension b of the graphene layer 4 and the black phosphorus layer 5 is respectively 80nm, 90nm and 100nm, the left absorption band is almost kept unchanged, and the right absorption band can be independently tuned, i.e. under the incidence of a transverse electric wave (TE polarization), the left absorption band is kept in the interval of 8.5-9.5 μm, and the right absorption band has three independent absorption bands with larger interval; when transverse magnetic wave (TM polarization) is incident, the left absorption band is maintained in the interval of 9-10 μm, and the right absorption band has three independent absorption bands with large interval.
Therefore, the wave absorbing device of the utility model has better anisotropy and absorptivity.
Fig. 6 and 7 are graphs of absorption rate waveforms of different chemical dopings in the mode of using incident infrared light as transverse electric wave (TE polarization) according to the present invention. As can be seen from fig. 6, the two absorption bands can be tuned by changing the chemical potential of the graphene layer, which is shown in fig. 6 as the chemical potential μ of the graphene layercThe absorption bands of the left and right change at 0.4eV, 0.6eV and 0.8eV, respectively; as can be seen from FIG. 7, by changing the carrier concentration n of black phosphorussAlternatively, the two absorption bands can be tuned, as shown in FIG. 7, to the carrier concentration n of black phosphorussAre respectively 1.00X 10-13cm-2、3.03×10-13cm-2And 5.05X 10-13cm-2Both the left and right absorption bands change. Therefore, the utility model discloses not only can tune the absorption band through the geometric dimensions who changes the structure, still can tune two absorption bands through the method of chemical doping. The method does not change the geometrical size of the structure, thereby being more beneficial to large-scale production and processing.
Fig. 8 is a waveform diagram of the absorption rate of the wave absorber under the transverse electric wave (TE polarization) infrared light of different incident angles, from which it can be seen that the incident angle θ of the infrared light is changed, and specifically, when the incident angle θ (the included angle with the normal line of the wave absorber surface) of the infrared light is 0 °, 24 ° and 48 °, the absorption rates (absorptions) at 0 ° and 24 ° are equivalent, and the absorption rate at 48 ° is slightly lower, but the peak value of the left absorption band is about 70%, and the peak value of the right absorption band is about 90%, which has no great influence on the performance of the wave absorber, and does not depend on the incident angle of the incident infrared light, so that the wave absorber still has a good absorption rate for the oblique incident infrared light, and is beneficial to being used under the oblique incident angle of a wide range.
In fig. 4 to 8, the abscissa represents the incident wavelength λ (μm), and the ordinate represents the absorbance (%).
Example two
The structure of the dual-band infrared absorber provided in this embodiment is substantially the same as that of the first embodiment, except that: in the specific embodiment, the thickness of the gold substrate layer 3 is 2.8 μm, the thickness of the silicon dioxide layer 2 is 1.6 μm, the thickness of the hBN dielectric layer 1 is 20nm, and the thicknesses of the graphene layer 4 and the black phosphorus layer 5 are both 1 nm. The trend is the same as in the first embodiment according to the conditions in fig. 6 to 8; are not listed one by one here.
EXAMPLE III
The structure of the dual-band infrared absorber provided in this embodiment is substantially the same as that of the first embodiment, except that: in the specific embodiment, the thickness of the gold substrate layer 3 is 3.5 μm, the thickness of the silicon dioxide layer 2 is 1 μm, the thickness of the hBN dielectric layer 1 is 12nm, and the thicknesses of the graphene layer 4 and the black phosphorus layer 5 are both 0.35 nm. The trend is the same as in the first embodiment according to the conditions in fig. 6 to 8; are not listed one by one here.
While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. A dual-band infrared wave absorber is characterized in that: the wave-absorbing module comprises a gold substrate layer, a silicon dioxide layer stacked on the surface of the gold substrate layer and a plurality of wave-absorbing modules arranged in an array mode and arranged on the surface of the silicon dioxide layer, wherein the wave-absorbing modules are provided with four wave-absorbing units, each wave-absorbing unit comprises a black phosphorus layer arranged on the surface of the silicon dioxide layer and a graphene layer arranged above the black phosphorus layer, an hBN medium layer is filled between the black phosphorus layer and the graphene layer, the black phosphorus layer and the graphene layer are semi-elliptic by half cutting with a long axis as a center, and the projection planes of the black phosphorus layer and the graphene layer vertically projected on the surface; the four wave absorbing units form a wave absorbing module with a square structure by taking the long axis of the semiellipse as the outer edge.
2. The dual-band infrared absorber of claim 1, wherein: the long shaft outer edges of the wave absorbing units of the adjacent wave absorbing modules are butted.
3. The dual-band infrared absorber of claim 1, wherein: the thickness of the black phosphorus layer and the graphene layer is 0.35-1 nm.
4. The dual-band infrared absorber of claim 1, wherein: the long axis size of the black phosphorus layer and the graphene layer is 80-120nm, and the short axis size is 42-72 nm.
5. The dual-band infrared absorber of claim 1, wherein: the thickness of the hBN medium layer filled between the black phosphorus layer and the graphene layer is 5nm-20 nm.
6. The dual band infrared absorber of claim 1 or 5, wherein: the hBN dielectric layer is further extended and paved on the surface of the silicon dioxide layer.
7. The dual-band infrared absorber of claim 1, wherein: the thickness of the silicon dioxide layer is 1-1.6 μm.
8. The dual-band infrared absorber of claim 1, wherein: the thickness of the gold substrate layer is 2.8-5.2 μm.
9. The dual-band infrared absorber of claim 1, wherein: the total thickness of the gold substrate layer/the silicon dioxide layer/the black phosphorus layer/the hBN dielectric layer/the graphene layer is 4.3-7.2 mu m.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110471137A (en) * | 2019-09-17 | 2019-11-19 | 厦门理工学院 | A kind of two-band infrared wave-absorbing device |
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2019
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110471137A (en) * | 2019-09-17 | 2019-11-19 | 厦门理工学院 | A kind of two-band infrared wave-absorbing device |
| CN110471137B (en) * | 2019-09-17 | 2024-02-13 | 厦门理工学院 | Dual-band infrared absorber |
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