CN210297541U

CN210297541U - Gate pole circuit structure for double-tube IGBT

Info

Publication number: CN210297541U
Application number: CN201921104566.3U
Authority: CN
Inventors: 陈宏�; 苑伟华; 李红; 逯玉成; 王亮亮
Original assignee: CRRC Xian Yonge Electric Co Ltd
Current assignee: CRRC Xian Yonge Electric Co Ltd
Priority date: 2019-07-15
Filing date: 2019-07-15
Publication date: 2020-04-10
Anticipated expiration: 2029-07-15

Abstract

The utility model belongs to the technical field of power electronic device, a gate pole circuit structure for double-barrelled IGBT is related to, include: the first acquisition circuit is welded on the PCB and used for feeding the IGBT, and the second acquisition circuit is welded on the PCB and used for feeding the IGBT; the first acquisition circuit comprises a short-circuit protection circuit, an overvoltage suppression circuit and a filtering absorption voltage stabilizing circuit, wherein the output end of the short-circuit protection circuit is respectively connected with the overvoltage suppression circuit and the filtering absorption voltage stabilizing circuit, and the output end of the overvoltage suppression circuit is connected with the filtering absorption voltage stabilizing circuit through a single-phase overvoltage suppression diode; the second acquisition circuit and the first acquisition circuit have the same structure and are mutually independent. The circuit can be used for a 1700V double-tube packaged high-voltage high-power IGBT, realizes the reliable work of a driving signal, effectively inhibits the reverse voltage instantaneous high pulse generated when the IGBT is switched off, and quickly and effectively protects the IGBT when short circuit occurs.

Description

Gate pole circuit structure for double-tube IGBT

Technical Field

The utility model belongs to the technical field of power electronic device, a double-barrelled IGBT is related to, concretely relates to gate pole circuit structure for double-barrelled IGBT.

Background

In recent years, an IGBT power device is more and more widely applied to a power conversion circuit, the IGBT works in a high-voltage and high-current state, the surrounding electromagnetic environment is very complex, and a driving signal from an IGBT driving board is possibly subjected to electromagnetic interference in the process of being transmitted to the IGBT, so that the IGBT is mistakenly conducted or the switching state is out of control, and further, a circuit fault or a device is damaged; in addition, during the turn-off process of the IGBT, instantaneous overvoltage is generated between terminals C, E, and the instantaneous high reverse overvoltage sometimes reaches several hundreds to thousands of volts, which poses a great threat to the safe operation of the IGBT. Therefore, absorption suppression and short-circuit protection of the gate overvoltage of the IGBT are required.

At present, the prior art includes: 1) when most of low-voltage class (1700V) IGBTs are applied, a gate absorption suppression circuit is not used, or the circuit module is not directly installed on the IGBT but arranged on a driving circuit board, so that the anti-electromagnetic interference capability of the IGBT is poor, when a line for driving and outputting the signal to the IGBT is long, the signal is easy to interfere, and the IGBT is switched on by mistake or is out of control in switching; and without an over-voltage suppression protection function, the IGBT may be damaged thereby. 2) The existing gate pole circuit module with 1700V voltage level only has absorption and inhibition functions, cannot perform short-circuit protection and desaturation detection on the IGBT, and cannot realize rapid and effective protection on the IGBT; 3) the existing 1700V voltage-class gate absorption and short-circuit protection circuit module is designed for a single-tube IGBT and cannot be applied to absorption suppression and short-circuit protection of a 1700V voltage-class high-voltage high-power double-tube IGBT; 4) the existing 1700V gate pole absorption circuit module is mainly connected with a drive board through a single cable welded on a PCB or connected through a connector occupying a large space, and is not suitable for small-space product design.

SUMMERY OF THE UTILITY MODEL

The utility model aims to overcome the defects of the prior art and provide a gate pole circuit structure for a double-tube IGBT, which ensures the stability of the IGBT gate pole driving signal on one hand, and realizes voltage clamping when the IGBT turn-off back pressure is too high, so that the IGBT is not damaged by high voltage; on the other hand, the C-pole voltage of the IGBT is collected so as to carry out IGBT short-circuit protection; and meanwhile, the absorption of the gate overvoltage of the double-tube IGBT and the short-circuit protection of the IGBT are realized by adopting one circuit board.

In order to achieve the above purpose, the utility model provides a following technical scheme:

a gate circuit structure for a dual-transistor IGBT, comprising: the first acquisition circuit and the second acquisition circuit are welded on the PCB and used for installing the upper tube IGBT and the second acquisition circuit for installing the lower tube IGBT, and the first acquisition circuit, the second acquisition circuit and the double-tube IGBT are connected by a D-type 15-pin aviation connector and a coaxial cable at the interval of 1.27mm +/-0.2 mm; the first acquisition circuit comprises a short-circuit protection circuit, an overvoltage suppression circuit and a filtering absorption voltage stabilizing circuit, wherein the output end of the short-circuit protection circuit is respectively connected with the overvoltage suppression circuit and the filtering absorption voltage stabilizing circuit, and the output end of the overvoltage suppression circuit is connected with the filtering absorption voltage stabilizing circuit through a single-phase overvoltage suppression diode; the second acquisition circuit and the first acquisition circuit have the same structure and are mutually independent.

Further, the output end of the short-circuit protection circuit comprises an output end A formed by voltage division through resistors R116 and R117, and an output end SC1 formed by voltage division through resistors R11, R12, R13, R14, R15, R16, R17, R18 and R19, wherein the output end A is connected with the filter absorption voltage stabilizing circuit, the output end SC1 is connected with the IGBT drive short-circuit protection circuit, and the input end B is connected with a terminal C1 of the upper-tube IGBT.

Furthermore, the overvoltage suppression circuit comprises a bidirectional overvoltage suppression diode D14, a single-phase overvoltage suppression diode D11, D12 and D13 which are sequentially connected in series, the input end of the overvoltage suppression circuit is connected with a terminal C1 of the upper tube IGBT, and the output end of the overvoltage suppression circuit is connected with a gate trigger terminal G1 of the upper tube IGBT.

Furthermore, the filtering absorption voltage stabilizing circuit comprises a clamping voltage stabilizing circuit and a gate turn-on delay charging circuit, wherein the clamping voltage stabilizing circuit is used for preventing the high-voltage spike of the gate driving circuit.

Further, the clamping voltage stabilizing circuit comprises diodes D17 and D18 which are connected in parallel, and capacitors C13, C14 and C15 which are connected in parallel, wherein cathodes of the diodes D17 and D18 are connected with one ends of the parallel capacitors C13, C14 and C15.

Further, the gate turn-on delay charging circuit comprises a diode D16 and capacitors C11 and C12 connected in parallel, wherein the anode of the diode D16 is connected with the anodes of diodes D17 and D18, and the anodes of the diodes D16, D17 and D18 are connected with a terminal G1 of the upper tube IGBT; the cathode of the diode D16 is connected with one end of each of the parallel capacitors C11 and C12, one end of each of the parallel capacitors C11 and C12 is connected with the other end of each of the parallel capacitors C13, C14 and C15, and the other end of each of the parallel capacitors C11 and C12 is connected with the output end A of the short-circuit protection circuit and the terminal E1 of the upper tube IGBT respectively.

Further, the terminals C1, G1, E1 of the upper-tube IGBT are connected to the collector auxiliary terminal C, the gate terminal G, and the emitter auxiliary terminal E of the upper-tube IGBT, respectively.

Further, the terminals C1, G1, E1 of the upper tube IGBT are connected by a PCB pad to correspond to the harness terminals of the driving output by bolts.

Further, be provided with hollow out construction on the PCB board, hollow out construction includes the first hollow out construction that is used for separating first acquisition circuit, second acquisition circuit for with the second hollow out construction that high pressure sampling signal end C1 and low pressure drive signal end G1, E1 keep apart.

Furthermore, the electronic components included by the first acquisition circuit and the second acquisition circuit are packaged by adopting patches.

Compared with the prior art, the utility model provides a technical scheme includes following beneficial effect:

the first acquisition circuit and the second acquisition circuit are welded on the PCB, and after the PCB is connected with the double-tube IGBT in an installing way, the problem that signals are easily interfered in the process of driving and outputting the signals to the IGBT is solved; in addition, the first acquisition circuit, the second acquisition circuit and the double-tube IGBT are connected in a mode of connecting D-type 15-pin aviation connectors and coaxial cables with the distance of 1.27mm +/-0.2 mm, so that reliable signal transmission can be realized, and circuit modules in narrow installation spaces can be installed; by adding the design of the short-circuit protection circuit and comparing with a comparator arranged in the IGBT driving circuit, the IGBT can be rapidly detected when short circuit or desaturation occurs, and the short-circuit protection of the double-tube IGBT is realized; by adding the overvoltage suppression circuit, further rise of reverse overvoltage is effectively suppressed, and the problem that the IGBT is easily damaged due to too large reverse overvoltage when the IGBT is subjected to overcurrent turn-off is solved; the clamping voltage stabilization of the drive pulse between G, E terminals of the IGBT is realized through a clamping voltage stabilizing circuit in the filter absorption circuit, and the drive voltage is ensured to be clamped below 20V; through the gate opening delay charging circuit in the filter absorption circuit, when the gate voltage exceeds the breakdown voltage of the diode D16, the capacitor starts to be charged, the opening speed of the IGBT is delayed, the opening performance of the IGBT is improved, and the impact of current at the opening time is reduced.

In addition, through the design of adding the hollow structure on the PCB, the first hollow structure separates the first acquisition circuit from the second acquisition circuit, and the mutual independence of the two parts of circuits is ensured; meanwhile, the second hollow structure is used for realizing the isolation between the low-voltage driving signal terminals (G1 and E1 terminals, G2 and E2 terminals) and the high-voltage sampling signal terminals (C1 and C2 terminals).

Drawings

Fig. 1 is a layout diagram of the overall structure of a gate circuit for a double-tube IGBT according to the present invention;

FIG. 2 is a structural diagram of a gate circuit for an upper tube IGBT according to the present invention;

FIG. 3 is a structural diagram of a gate circuit for a low tube IGBT according to the present invention;

fig. 4 is the utility model provides a practical layout for gate pole circuit structure of top tube IGBT.

Wherein: 1. a first acquisition circuit; 2. a second acquisition circuit; 3. a short-circuit protection circuit; 4. an overvoltage suppression circuit; 5. a filter absorption voltage stabilizing circuit; 6. a first hollow structure; 7. and the second hollow structure.

Detailed Description

The present invention will be described in further detail with reference to the following drawings and embodiments:

example 1:

referring to fig. 1, the utility model provides a gate pole circuit structure for double-barrelled IGBT, its overall structure overall arrangement is as follows: the device comprises a first acquisition circuit 1 welded on a PCB and used for an upper tube IGBT and a second acquisition circuit 2 used for a lower tube IGBT, wherein the first acquisition circuit 1, the second acquisition circuit 2 and the double-tube IGBT are connected by a D-type 15-pin aviation connector and a coaxial cable with the distance of 1.27mm +/-0.2 mm; referring to fig. 2, the first acquisition circuit 1 includes a short-circuit protection circuit 3, an overvoltage suppression circuit 4 and a filter absorption voltage stabilizing circuit 5, an output end of the short-circuit protection circuit 3 is respectively connected with the overvoltage suppression circuit 4 and the filter absorption voltage stabilizing circuit 5, and an output end of the overvoltage suppression circuit 4 is connected with the filter absorption voltage stabilizing circuit 5 through a single-phase overvoltage suppression diode D15; the second acquisition circuit 2 has the same structure as the first acquisition circuit 1 and is independent of the first acquisition circuit.

Further, referring to fig. 4, the output end of the short-circuit protection circuit 3 includes an output end a (where the resistance value of the resistor R116 is 200k, and the resistance value of the resistor R117 is 100k) divided by resistors R116 and R117, an output end SC1 (the resistance values of the resistors R11-R14 are 100k, and the resistance values of the resistors R15-R19 are 200k) divided by resistors R11, R12, R13, R14, R15, R16, R17, R18, and R19, the output end a is connected with the filter absorption voltage regulator circuit 5, the output end SC1 is connected with the IGBT driving short-circuit protection circuit, and the input end B is connected with a terminal C1 of the upper tube IGBT. The direct introduction of the high voltage of the C pole into the driving circuit board is avoided through resistance voltage division; meanwhile, the voltage of the test point SC1 reaches the short-circuit protection voltage of the configured IGBT (insulated gate bipolar transistor), namely 10.2V, by adjusting the resistance value of the resistor, the voltage is compared with a comparator arranged in a driving circuit, so that the IGBT can be rapidly detected when short circuit or desaturation occurs, and the IGBT is effectively protected.

Further, the overvoltage suppression circuit 4 includes a bidirectional overvoltage suppression diode D14 (model P6SMB350CA), a single-phase overvoltage suppression diode D11 (model P6SMB300A), a single-phase overvoltage suppression diode D12 (model P6SMB300A), and a single-phase overvoltage suppression diode D13 (model P6SMB400A) which are connected in series in this order, and the output terminal of the overvoltage suppression circuit 4 is connected to the terminal C1 of the upper tube IGBT. In the reverse turn-off process of the IGBT, when the high voltage instantaneous peak on the collector C exceeds the breakdown voltage of D11, D12, D13 and D14, the voltage on the overvoltage suppression diode D16 (the model is SMBJ6.5A) is clamped and stabilized on the rated voltage, at the moment, current flows to a gate G from the collector C through the overvoltage suppression circuit 4, the turn-off speed of the IGBT is adjusted, and further increase of reverse overvoltage is effectively suppressed.

Further, the filter absorption voltage stabilizing circuit 5 comprises a clamping voltage stabilizing circuit for preventing the gate driving circuit from generating high voltage spikes and a gate turn-on delay charging circuit. In order to prevent a high-voltage spike from occurring in a gate drive circuit, D17 (model number is STPS340U), D18 (model number is STPS340U), C13 (working parameters are 4.7 muF and 50V), C14 (working parameters are 4.7 muF and 50V) and C15 (working parameters are 4.7 muF and 50V) realize clamping and voltage stabilization of drive pulses between G, E terminals of an IGBT, and the voltage stabilization value of the voltage stabilization circuit is generally close to the drive voltage value, so that the drive voltage is guaranteed to be clamped below 20V. The gate opening delay charging circuit starts to charge the capacitor when the gate voltage exceeds the breakdown voltage of D16, so that the opening speed of the IGBT is delayed, the opening performance of the IGBT is improved, and the impact of current at the opening moment is reduced.

Furthermore, the gate turn-on delay charging circuit comprises a diode D16 and capacitors C11 (with a capacitance of 47nF) and C12 (with a capacitance of 220nF) connected in parallel, wherein the anode of the diode D16 is connected with the anodes of the diodes D17 and D18, and the anodes of the diodes D16, D17 and D18 are connected with a terminal G1 of the upper-tube IGBT; the cathode of the diode D16 is connected to one end of each of the parallel capacitors C11 and C12, one end of each of the parallel capacitors C11 and C12 is connected to the other end of each of the parallel capacitors C13, C14 and C15, and the other end of each of the parallel capacitors C11 and C12 is connected to the output terminal of the short-circuit protection circuit and the terminal E1 of the upper-tube IGBT.

Further, the terminals C1, G1, E1 of the top-tube IGBT are connected to the collector auxiliary terminal C, gate terminal G and emitter auxiliary terminal E of the top-tube IGBT, respectively.

Further, the terminals C1, G1, E1 of the upper tube IGBT are connected by a PCB pad to correspond to the harness terminals of the drive output by bolts.

Further, a hollow structure is arranged on the PCB and comprises a first hollow structure 6 for separating the first acquisition circuit 1 from the second acquisition circuit 2, and the first hollow structure 6 enables the first acquisition circuit 1 and the second acquisition circuit 2 to be mutually independent; and the second hollow structure 7 is used for isolating the high-voltage sampling signal terminal C1 from the low-voltage driving signal terminals G1 and E1.

Preferably, as shown in fig. 1, the first hollow structure 6 includes five strip-shaped hollow structures, the middle hollow structure is a rectangular vertical strip with a length of 22mm and a width of 2mm, and two ends of the middle hollow structure are arc-shaped; strip-shaped hollow structures are respectively arranged at the upper left position, the lower left position, the upper right position and the lower right position of the middle hollow structure, the height of each strip-shaped hollow structure is 13mm, the width of each strip-shaped hollow structure is 2mm, and each strip-shaped hollow structure is parallel to the middle hollow structure. The second hollow structure 7 comprises a strip-shaped structure and a trapezoid structure with the height of 26.5mm, and the sum of the height of the trapezoid structure and the width of the strip-shaped structure is 10 mm.

Further, the electronic components included in the first acquisition circuit 1 and the second acquisition circuit 2 are packaged by using a patch.

Preferably, the components of the filter absorption voltage stabilizing circuit 5 are as close as possible to the gate and the emitter of the IGBT, so as to optimize the voltage stabilizing absorption effect.

Example 2:

referring to fig. 1, the utility model provides a gate pole circuit structure for double-barrelled IGBT, its overall structure overall arrangement is as follows: the device comprises a first acquisition circuit 1 welded on a PCB and used for an upper tube IGBT and a second acquisition circuit 2 used for a lower tube IGBT, wherein the first acquisition circuit 1, the second acquisition circuit 2 and the double-tube IGBT are connected by a D-type 15-pin aviation connector and a coaxial cable with the distance of 1.27mm +/-0.2 mm; the second acquisition circuit 2 comprises a short-circuit protection circuit 3, an overvoltage suppression circuit 4 and a filtering absorption voltage stabilizing circuit 5, the output end of the short-circuit protection circuit 3 is respectively connected with the overvoltage suppression circuit 4 and the filtering absorption voltage stabilizing circuit 5, and the output end of the overvoltage suppression circuit 4 is connected with the filtering absorption voltage stabilizing circuit 5 through a single-phase overvoltage suppression diode D25; the second acquisition circuit 2 has the same structure as the first acquisition circuit 1 and is independent of the first acquisition circuit.

Further, referring to fig. 3, the output end of the short-circuit protection circuit 3 includes an output end C divided by resistors R216 and R217, and an output end SC2 divided by resistors R21, R22, R23, R24, R25, R26, R27, R28, and R29, the output end C is connected to the filtering absorption voltage stabilizing circuit 5, the output end SC2 is connected to the IGBT driving short-circuit protection circuit, and the input end D is connected to a terminal C2 of the lower tube IGBT. The direct introduction of the high voltage of the C pole into the driving circuit board is avoided through resistance voltage division; meanwhile, the voltage of the test point SC2 reaches the short-circuit protection voltage of the configured IGBT (insulated gate bipolar transistor), namely 10.2V, by adjusting the resistance value of the resistor, the voltage is compared with a comparator arranged in a driving circuit, so that the IGBT can be rapidly detected when short circuit or desaturation occurs, and the IGBT is effectively protected.

Further, the overvoltage suppression circuit 4 comprises a bidirectional overvoltage suppression diode D24, a single-phase overvoltage suppression diode D21, a single-phase overvoltage suppression diode D22 and a single-phase overvoltage suppression diode D23 which are sequentially connected in series, and the output end of the overvoltage suppression circuit 4 is connected with the terminal C2 of the lower tube IGBT. In the reverse turn-off process of the IGBT, when the high voltage transient spike on the collector C exceeds the breakdown voltage of D21, D22, D23 and D24, the voltage on the overvoltage suppression diode D26 is clamped and stabilized at the rated voltage, at the moment, current flows from the collector C to the gate G through the overvoltage suppression circuit 4, the turn-off speed of the IGBT is adjusted, and further rising of reverse overvoltage is effectively suppressed.

Further, the filter absorption voltage stabilizing circuit 5 comprises a clamping voltage stabilizing circuit for preventing the gate driving circuit from generating high voltage spikes and a gate turn-on delay charging circuit. In order to prevent a high-voltage peak from occurring in a gate drive circuit, D27, D28, C23, C24 and C25 are used for realizing the clamping and voltage stabilization of drive pulses between G, E terminals of the IGBT, and the voltage stabilization value of the voltage stabilization circuit is generally close to the drive voltage value, so that the drive voltage is guaranteed to be clamped below 20V. The gate opening delay charging circuit starts to charge the capacitor when the gate voltage exceeds the breakdown voltage of D26, so that the opening speed of the IGBT is delayed, the opening performance of the IGBT is improved, and the impact of current at the opening moment is reduced.

Further, the clamping voltage stabilizing circuit comprises diodes D27 and D28 which are connected in parallel, and capacitors C23, C24 and C25 which are connected in parallel, wherein cathodes of the diodes D27 and D28 are connected with one ends of the parallel capacitors C23, C24 and C25.

Furthermore, the gate turn-on delay charging circuit comprises a diode D26 and capacitors C21 and C22 connected in parallel, wherein the anode of the diode D26 is connected with the anodes of the diodes D27 and D28, and the anodes of the diodes D26, D27 and D28 are connected with a terminal G2 of the lower tube IGBT; the cathode of the diode D26 is connected to one end of each of the parallel capacitors C21 and C22, one end of each of the parallel capacitors C21 and C22 is connected to the other end of each of the parallel capacitors C23, C24 and C25, and the other end of each of the parallel capacitors C21 and C22 is connected to the output terminal of the short-circuit protection circuit and the terminal E2 of the lower tube IGBT.

Further, terminals C2, G2, E2 of the down tube IGBT are connected to a collector auxiliary terminal C, a gate terminal G, and an emitter auxiliary terminal E of the down tube IGBT, respectively.

Further, terminals C2, G2, E2 of the down tube IGBT are connected by a PCB pad to correspond to the harness terminal of the drive output by a bolt.

Further, a hollow structure is arranged on the PCB, and the first hollow structure 6 separates the first acquisition circuit 1 from the second acquisition circuit 2, so that the first acquisition circuit 1 and the second acquisition circuit 2 are independent of each other; the second hollow structure 7 is used for isolating the high-voltage sampling signal terminal C2 from the low-voltage driving signal terminals G2 and E2.

Preferably, as shown in fig. 1, the first hollow structure 6 includes five strip-shaped hollow structures, the middle hollow structure is a rectangular vertical strip with a length of 22mm and a width of 2mm, and two ends of the middle hollow structure are arc-shaped; strip-shaped hollow structures are respectively arranged at the upper left position, the lower left position, the upper right position and the lower right position of the middle hollow structure, the height of each strip-shaped hollow structure is 13mm, the width of each strip-shaped hollow structure is 2mm, and each strip-shaped hollow structure is parallel to the middle hollow structure; the second hollow structure 7 comprises a strip-shaped structure and a trapezoid structure with the height of 26.5mm, and the sum of the height of the trapezoid structure and the width of the strip-shaped structure is 10 mm.

To sum up, the utility model provides a this kind of gate pole circuit structure for double-barrelled IGBT can be applied to the high-pressure high-power IGBT of the double-barrelled encapsulation of 1700V grades, realizes drive signal's reliable work to the instantaneous high pulse of reverse voltage that produces when effectively restraining IGBT and turn-off can carry out collecting electrode voltage fast simultaneously and gather, when the short circuit appears, protects IGBT fast effectively, practices thrift the cost of maintenance and maintenance, has obvious economy and social.

The above description is only exemplary of the invention, and is intended to enable those skilled in the art to understand and implement the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention.

It is to be understood that the present invention is not limited to what has been described above, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.

Claims

1. A gate electrode circuit structure for a double-tube IGBT, comprising: the device comprises a first acquisition circuit (1) for an upper tube IGBT and a second acquisition circuit (2) for a lower tube IGBT which are welded on a PCB, wherein the first acquisition circuit (1), the second acquisition circuit (2) and the double tube IGBT are connected by a D-type 15-pin aviation connector and a coaxial cable with the interval of 1.27mm +/-0.2 mm; the first acquisition circuit (1) comprises a short-circuit protection circuit (3), an overvoltage suppression circuit (4) and a filtering absorption voltage stabilizing circuit (5), the output end of the short-circuit protection circuit (3) is respectively connected with the overvoltage suppression circuit (4) and the filtering absorption voltage stabilizing circuit (5), and the output end of the overvoltage suppression circuit (4) is connected with the filtering absorption voltage stabilizing circuit (5) through a single-phase overvoltage suppression diode; the second acquisition circuit (2) and the first acquisition circuit (1) have the same structure and are independent.

2. The gate circuit structure of claim 1, wherein the output terminal of the short-circuit protection circuit (3) comprises an output terminal a formed by voltage division through resistors R116 and R117, and an output terminal SC1 formed by voltage division through resistors R11, R12, R13, R14, R15, R16, R17, R18 and R19, the output terminal a is connected with a filter absorption voltage stabilizing circuit, the output terminal SC1 is connected with the IGBT driving short-circuit protection circuit, and the input terminal B is connected with a terminal C1 of the upper-tube IGBT.

3. The gate circuit structure for a dual-transistor IGBT according to claim 1, characterized in that the overvoltage suppression circuit (4) comprises a bidirectional overvoltage suppression diode D14, a single-phase overvoltage suppression diode D11, D12, D13 connected in series in this order, and the input of the overvoltage suppression circuit (4) is connected to the terminal C1 of the upper transistor IGBT and the output is connected to the gate trigger terminal G1 of the upper transistor IGBT.

4. The gate circuit structure for a dual-transistor IGBT according to claim 1, wherein the filter absorption voltage stabilizing circuit (5) includes a clamp voltage stabilizing circuit for preventing a high voltage spike of the gate driving circuit and a gate turn-on delay charging circuit.

5. The gate circuit structure of claim 4, wherein the clamping voltage stabilizing circuit comprises diodes D17, D18 connected in parallel and capacitors C13, C14, C15 connected in parallel, and cathodes of the diodes D17, D18 are connected with one end of the parallel capacitors C13, C14, C15.

6. The gate circuit structure of claim 4, wherein the gate turn-on delay charging circuit comprises a diode D16 and capacitors C11 and C12 connected in parallel, wherein the anode of the diode D16 is connected to the anodes of the diodes D17 and D18, and the anodes of the diodes D16, D17 and D18 are connected to the terminal G1 of the upper-tube IGBT; the cathode of the diode D16 is connected with one end of each of the parallel capacitors C11 and C12, one end of each of the parallel capacitors C11 and C12 is connected with the other end of each of the parallel capacitors C13, C14 and C15, and the other end of each of the parallel capacitors C11 and C12 is connected with the output end A of the short-circuit protection circuit and the terminal E1 of the upper tube IGBT respectively.

7. The gate circuit structure for a dual-transistor IGBT of claim 1 wherein the terminals C1, G1, E1 of the upper-transistor IGBT are connected to the collector auxiliary terminal C, gate terminal G and emitter auxiliary terminal E of the upper-transistor IGBT, respectively.

8. The gate circuit structure for a dual-tube IGBT of claim 7, wherein the terminals C1, G1, E1 of the upper tube IGBT are connected with the wiring harness terminals of the driving output by means of bolts using PCB pads.

9. The gate circuit structure for a dual-transistor IGBT according to any one of claims 1-8, wherein the PCB is provided with a hollow structure, the hollow structure comprises a first hollow structure (6) for separating the first collecting circuit (1) from the second collecting circuit (2), and a second hollow structure (7) for separating the high-voltage sampling signal terminal C1 from the low-voltage driving signal terminals G1 and E1.

10. The gate circuit structure for a double-tube IGBT according to any one of claims 1-8, characterized in that the electronic components included in the first and second collecting circuits (1, 2) are packaged by a patch.