CN210287496U - High-flux electron beam combined material evaporation system - Google Patents
High-flux electron beam combined material evaporation system Download PDFInfo
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- CN210287496U CN210287496U CN201921276030.XU CN201921276030U CN210287496U CN 210287496 U CN210287496 U CN 210287496U CN 201921276030 U CN201921276030 U CN 201921276030U CN 210287496 U CN210287496 U CN 210287496U
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Abstract
The utility model relates to a vacuum coating system field discloses a high flux electron beam combined material evaporation system. The high-flux electron beam combined material evaporation system comprises: the vacuum cavity is set to be vacuum; the electron beam evaporation device is arranged at the lower part of the vacuum cavity; the substrate bracket is arranged at the upper part of the vacuum cavity and used for placing a substrate; and the continuous mask device and/or the discrete mask device are/is arranged at the upper part of the vacuum cavity and are positioned between the substrate bracket and the electron beam evaporation device. The utility model discloses a high flux electron beam combined material vaporization system has realized the preparation of high flux material sample, has improved the preparation efficiency of combined material sample greatly.
Description
Technical Field
The utility model relates to a vacuum coating system, in particular to high flux electron beam combined material evaporation system.
Background
Electron beam evaporation is an important technique and method for vacuum coating, which controls electrons generated by a cathode to move along a specific track through an electromagnetic field, heats an evaporated material in a crucible, and enables the evaporated material to be evaporated in a vacuum environment and deposited on a substrate. However, the conventional electron beam evaporation system can only prepare a sample of one material component at a time, and if a set of arbitrary material ternary phase diagrams needs to be obtained, the calculation needs to be performed by 100 percent according to the component resolution of 1 percent3(i.e., 10)6) Even if 30 samples were prepared per day, the experiments required nearly one hundred years to complete. For the preparation efficiency who improves the sample, the utility model discloses on the basis of the mask technique for the integrated circuit manufacturing of using for reference, with the successful application of mask technique to the material preparation system, realized the preparation of high flux material sample, solve traditional electron beam evaporation system sample preparation process inefficiency problem, very big preparation time and the preparation cost who has shortened the sample.
Disclosure of Invention
An object of the utility model is to provide a high flux electron beam combined material vaporization system. Tens to tens of sample points with different components can be obtained on a single sample chip, and the preparation time and the preparation cost of the sample are greatly shortened.
In order to solve the above technical problem, an embodiment of the present invention provides a high flux electron beam combined material evaporation system, including:
the vacuum cavity is set to be vacuum;
the electron beam evaporation device is arranged at the lower part of the vacuum cavity;
the substrate bracket is arranged at the upper part of the vacuum cavity and used for placing a substrate;
and the mask device is a continuous mask device and/or a discrete mask device, is arranged at the upper part of the vacuum cavity and is positioned between the substrate bracket and the electron beam evaporation device.
Optionally, the continuous mask device comprises a continuous mask and a motor, and the motor drives the continuous mask to move.
Optionally, the discrete mask apparatus includes a discrete mask holder and a motor, the motor drives the discrete mask holder to rotate, and the discrete mask holder is used for placing the discrete mask.
In order to monitor the evaporation rate of the material, optionally, the vacuum chamber is provided with a crystal oscillator located below the substrate carrier.
Optionally, a partition plate is arranged in the middle of the vacuum cavity, the partition plate is provided with holes and is positioned between the electron beam evaporation device and the substrate bracket,
optionally, an electron source baffle is arranged in the vacuum chamber and located above the electron beam evaporation device, and the electron source baffle can move.
Optionally, a substrate baffle is arranged in the vacuum chamber and located below the substrate carrier, and the substrate baffle can move.
Optionally, the electron beam evaporation apparatus includes an electron beam evaporation source and a crucible.
Alternatively, the substrate carrier may be rotatable.
The utility model discloses an embodiment still provides a high flux electron beam combined material evaporation method, includes following step: the high-energy electron beam of the electron beam evaporation device heats materials in the crucible to melt and evaporate a first material, when the first evaporated material enters the upper part of the vacuum cavity, the continuous mask gradually shields the deposition position of the evaporated material on the substrate to finish the deposition of the first material, the continuous mask returns, the substrate rotates around the original point by 0-180 degrees, the electron beam evaporation device melts and evaporates a second material, the second material enters the upper part of the vacuum cavity, and the continuous mask gradually shields the deposition position of the evaporated material on the substrate to finish the deposition of the second material; withdrawing the continuous mask, rotating the substrate by 0-180 degrees around the origin, melting and evaporating the N material by the electron beam evaporation device, enabling the N material to enter the upper part of the vacuum cavity, gradually shielding the deposition position of the evaporated material on the substrate by the continuous mask, and finishing the deposition of the N material, wherein N is 3-200; repeating the steps for 0-200 times to form the combined material chip.
The utility model discloses an embodiment still provides another kind of high flux electron beam combined material evaporation method includes following step: the high-energy electron beam of the electron beam evaporation device heats the materials in the crucible to melt and evaporate the first material, and a first mask is placed on the discrete mask device to finish the deposition of the first material; rotating the substrate by 0-180 degrees, and depositing a second material on the substrate by using the first mask sheet; rotating the substrate by 0-180 degrees, and depositing an Mth material on the substrate by using the first mask sheet, wherein M is 3-200; after the substrate is rotated by 360 degrees, replacing the first mask sheet with a second mask sheet, and repeating the process; after the substrate is rotated for 360 degrees, replacing the second mask sheet with an Nth mask sheet, wherein N is 3-200 degrees; forming a combined material chip.
Compared with the prior art, the utility model, main difference and effect lie in: the utility model discloses a motion of the reasonable control mask piece of continuous mask device, discrete mask device pass through the control technique that mutually supports of multiunit mask piece, realize obtaining tens to tens of sample points that divide the difference of tens of components on single sample chip, the preparation time and the cost of preparation of shortening the sample that can be very big solve traditional electron beam evaporation system sample preparation process inefficiency problem. The crystal oscillator is arranged in the vacuum cavity and used for monitoring the evaporation rate and the deposition thickness of the material to obtain a better deposition effect. The utility model also provides two kinds of high flux electron beam combined material evaporation methods, continuous mask and discrete mask method promptly can carry out various individualized designs according to the technological requirement, with shorter time, obtain the combined material sample chip that composition information is abundanter.
Drawings
Fig. 1 is a schematic diagram of a high flux electron beam composite evaporation system according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a discrete mask device in an evaporation system of high flux electron beam composite according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the operation of a continuous mask in a high flux electron beam composite evaporation system according to an embodiment of the present invention;
fig. 4 is a layout of sample spots after mask separation and coating in a high flux electron beam composite evaporation system according to an embodiment of the present invention.
Detailed Description
In the following description, numerous technical details are set forth in order to provide a better understanding of the present application. However, it will be understood by those skilled in the art that the technical solutions claimed in the present application can be implemented without these technical details and with various changes and modifications based on the following embodiments.
In order to make the objects, technical solutions and advantages of the present invention clearer, embodiments of the present invention will be described in further detail below with reference to the accompanying drawings. The same or similar components in the figures are denoted by the same reference numerals.
In an embodiment of the present invention, as shown in fig. 1, embodiments of the present invention provide a high flux electron beam composite evaporation system, including: the vacuum cavity is set to be vacuum; the electron beam evaporation device is arranged at the lower part of the vacuum cavity; a substrate carrier 3 arranged at the upper part of the vacuum chamber and used for placing a substrate 4, wherein the substrate carrier 3 can rotate or move; the mask device is a continuous mask device and a discrete mask device, is arranged at the upper part of the vacuum cavity and is positioned between the substrate bracket 3 and the electron beam evaporation device. In another embodiment, a continuous mask device or a discrete mask device may be separately provided according to the manufacturing requirements of the chip material.
In the present embodiment, the continuous mask device includes the continuous mask2 and a motor that drives the continuous mask2 to move. The discrete mask device comprises a discrete mask support 6 and a motor, wherein the motor drives the discrete mask support 6 to rotate, and the discrete mask support 6 is used for placing the discrete mask 5. The electron beam evaporation apparatus includes an electron beam evaporation source 10 and a crucible 9.
In order to monitor the evaporation rate of the material, the vacuum chamber is provided with a crystal oscillator 1, located below the substrate carrier 3.
In one embodiment of the present invention, a partition 7 may be disposed in the middle of the vacuum chamber, and the partition has holes and is located between the electron beam evaporation apparatus and the substrate holder 3. An electron source baffle plate 8 can be arranged in the vacuum cavity and is positioned above the electron beam evaporation device, and the electron source baffle plate can move. In addition, a substrate baffle plate 12 can be arranged in the vacuum cavity and is positioned below the substrate bracket 3, and the substrate baffle plate 12 can move. The partition plate 7, the electron source baffle plate 8 and the substrate baffle plate 12 can shield the material evaporated by the evaporation source, so that the material is deposited more uniformly and stably in the deposition process.
The high-flux electron beam combined material evaporation system has the working principle that the vacuum cavity reaches the designed vacuum degree (the minimum requirement is superior to 1 multiplied by 10 in general)-3Pa) and the cooling water pressure of the system meet the design requirements, the electron beam evaporation source 10 starts to work, and the high-energy electron beam heats the material in the crucible 9 to increase the temperature of the material. When the temperature of the material reaches the evaporation temperature at this vacuum degree, the material starts to evaporate. The electron source baffle 8 is removed to allow the evaporated material to enter the upper part of the vacuum chamber through the holes in the partition 7, and the evaporation rate of the material is monitored by the crystal oscillator 1. After the evaporation rate has stabilized, the substrate shutter 12 is opened to allow the evaporation material to be deposited on the substrate 4. The deposition thickness of the material can be monitored by crystal oscillation parameters throughout the deposition process.
In another embodiment of the present invention, there is provided a method for evaporating a high flux electron beam composite material, a continuous masking method, comprising the steps of: the high-energy electron beam of the electron beam evaporation device heats materials in the crucible to melt and evaporate a first material, when the first evaporated material enters the upper part of the vacuum cavity, the continuous mask gradually shields the deposition position of the evaporated material on the substrate to finish the deposition of the first material, the continuous mask returns, the substrate rotates around the original point by 0-180 degrees, the electron beam evaporation device melts and evaporates a second material, the second material enters the upper part of the vacuum cavity, and the continuous mask gradually shields the deposition position of the evaporated material on the substrate to finish the deposition of the second material; withdrawing the continuous mask, rotating the substrate by 0-180 degrees around the origin, melting and evaporating the N material by the electron beam evaporation device, enabling the N material to enter the upper part of the vacuum cavity, gradually shielding the deposition position of the evaporated material on the substrate by the continuous mask, and finishing the deposition of the N material, wherein N is 3-200; repeating the steps for 0-200 times to form the combined material chip.
In one embodiment, as shown in fig. 3, when the mask holder 6 is rotated to the position shown in fig. two, the deposition positions of the evaporation materials on the triangular substrate are gradually blocked by the continuous mask2, so that the distribution of the evaporation materials in the moving direction of the continuous mask2 of the substrate is changed in a gradient manner (as shown in fig. three), and the first evaporation material is deposited at the maximum at the point a and at the minimum at the BC side (the deposition amount can be 0 at the minimum). After the evaporation of the first material is completed, the continuous mask2 is retracted to the BC edge position, the electron source crucible 9 is indexed, the melting and evaporation of the second material are performed, and simultaneously the triangular substrate is rotated clockwise 120 degrees around the point O so that the point B faces upward and the continuous mask2 is parallel to the AC side. During evaporation, the continuous mask2 is advanced stepwise under the motor advance, blocking more and more substrate positions, so that the deposition amount of the second material is distributed in a gradient on the substrate along the direction from point B to the AC perpendicular. After the second material is evaporated, the electron source crucible 9 is indexed again, the third evaporation material is changed, the continuous mask2 is retreated to the AC edge position, the substrate continuously rotates 120 degrees clockwise around the point O, so that the point C faces upwards, the evaporation of the third material is completed according to the same procedures of the previous two steps, and the evaporation effect is as shown in the third right lower graph, so that the single overlapping of the ternary material chips is formed. Each sample spot on the chip corresponds to a particular material composition. In order to achieve better effect, the evaporation process of the three materials can be continuously repeated to form a ternary material chip which is overlapped for many times.
In another embodiment of the present invention, there is provided another method for evaporating a high-flux electron beam combined material, a discrete mask method, comprising the steps of: the high-energy electron beam of the electron beam evaporation device heats the materials in the crucible to melt and evaporate the first material, and a first mask is placed on the discrete mask device to finish the deposition of the first material; rotating the substrate by 0-180 degrees, and depositing a second material on the substrate by using the first mask sheet; rotating the substrate by 0-180 degrees, and depositing an Mth material on the substrate by using the first mask sheet, wherein M is 3-200; after the substrate is rotated by 360 degrees, replacing the first mask sheet with a second mask sheet, and repeating the process; after the substrate is rotated for 360 degrees, replacing the second mask sheet with an Nth mask sheet, wherein N is 3-200 degrees; forming a combined material chip.
In one embodiment, as shown in FIG. 4, a chip of 16X 16 sample spots is prepared using a combination of four masks. The Mask1 was used as a Mask sheet to deposit one material a on the substrate (8 × 8 sample spots of a material a were deposited on one corner of the substrate), then the substrate was rotated 90 degrees and then Mask1 was used to deposit a second material B on the substrate (8 × 8 sample spots of B material were deposited on an adjacent corner of the substrate), and the process was continued 2 times to rotate the substrate 4 × 90 ° to 360 ° and then four sample spots of four materials were deposited on the four corners of the substrate. Mask1 was then replaced with Mask2 and the Mask1 process was repeated to continue to evaporate A, B, C, D the four materials onto the substrate resulting in 16 sample areas on the substrate (4 x 4 sample spots per area) of AA, AB, AC, AD, BA, BB, BC, BD, CA, CB, CC, CD, DA, DB, DC, DD. And then, the process is continuously changed for Mask3 and Mask4, and the process is repeated, so that after the test is completed, a sample chip on the right side of the four sides of the figure can be obtained, wherein the sample chip comprises 256 sample points, samples of pure materials are arranged on the four corners of the chip, and mixed components of the four materials are A, B, C, D in each sample point in the middle. The above process may not be limited to only four materials and four mask sheets, and the more the number of mask sheets is used, the more the number of sample points is obtained, and the more the types of materials are used, the more the component information of the sample points is obtained. And the shape and the distribution rule of the holes on the mask can be actually subjected to various personalized designs according to the process requirements.
The principle of the sample prepared by the discrete mask mode is that small holes which are arranged according to a certain rule are arranged on a template of the discrete mask, and evaporation materials can be deposited on a substrate only through the small holes on a discrete mask sheet which is close to the surface of the substrate, so that the distribution of the sample points deposited on the substrate is the same as the distribution rule of the small holes on the discrete mask. The deposition of different regular sample points can be realized according to the replacement of different mask sheets. Multiple discrete sample chips can also be prepared using combinations of multiple mask substrates with different evaporation materials.
While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.
Claims (8)
1. A high throughput electron beam combination material evaporation system, comprising:
the vacuum cavity is set to be vacuum;
the electron beam evaporation device is arranged at the lower part of the vacuum cavity;
the substrate bracket is arranged at the upper part of the vacuum cavity and used for placing a substrate;
and the mask device is a continuous mask device and/or a discrete mask device, is arranged at the upper part of the vacuum cavity and is positioned between the substrate bracket and the electron beam evaporation device.
2. The high throughput electron beam combined material evaporation system of claim 1, wherein the continuous mask means comprises a continuous mask and a motor, the motor driving the continuous mask to move.
3. The high throughput electron beam combined material evaporation system of claim 1, wherein the discrete mask apparatus comprises a discrete mask holder and a motor, the motor driving the discrete mask holder to rotate, the discrete mask holder being used for placing the discrete mask.
4. The high throughput electron beam combination evaporation system of claim 1, wherein the vacuum chamber is provided with a crystal oscillator located below the substrate carrier.
5. The high throughput electron beam composite evaporation system of any of claims 1-4, wherein a partition is disposed in the vacuum chamber, and the partition has holes and is located between the electron beam evaporation device and the substrate holder.
6. The high throughput electron beam composite evaporation system of any one of claims 1 to 4, wherein an electron source baffle is disposed in the vacuum chamber above the electron beam evaporation device, and the electron source baffle is movable.
7. The high throughput electron beam composite evaporation system of any of claims 1-4, wherein a substrate baffle is disposed in the vacuum chamber below the substrate holder, the substrate baffle being movable.
8. The high throughput electron beam combination evaporation system of any one of claims 1-4, wherein the electron beam evaporation device comprises an electron beam evaporation source and a crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921276030.XU CN210287496U (en) | 2019-08-07 | 2019-08-07 | High-flux electron beam combined material evaporation system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921276030.XU CN210287496U (en) | 2019-08-07 | 2019-08-07 | High-flux electron beam combined material evaporation system |
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| Publication Number | Publication Date |
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| CN210287496U true CN210287496U (en) | 2020-04-10 |
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| CN201921276030.XU Active CN210287496U (en) | 2019-08-07 | 2019-08-07 | High-flux electron beam combined material evaporation system |
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