CN210225346U - Ku frequency band low noise amplifier - Google Patents
Ku frequency band low noise amplifier Download PDFInfo
- Publication number
- CN210225346U CN210225346U CN201921477135.1U CN201921477135U CN210225346U CN 210225346 U CN210225346 U CN 210225346U CN 201921477135 U CN201921477135 U CN 201921477135U CN 210225346 U CN210225346 U CN 210225346U
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- noise amplifier
- low noise
- receiver
- microstrip
- rectangular waveguide
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Abstract
The utility model discloses a Ku frequency channel low noise amplifier, including consecutive rectangular waveguide-microstrip probe transition structure, amplitude limiter, first order low noise amplifier, fixed attenuator, second level low noise amplifier and microstrip type isolator. The utility model has good low noise characteristic, and can be used as the front end of the receiver to make the receiver obtain higher receiving sensitivity; the anti-interference device has the function of preventing large signals from being burnt out, and can improve the anti-interference capability of the receiver in a strong signal interference environment as the front end of the receiver; the rectangular waveguide-microstrip line probe transition structure converts signals from a waveguide to a planar microstrip line, and is convenient for mixing and integrating with various components of a circuit; the receiver has the characteristic of high linearity, and can obtain better linear working characteristics when being used as the front end of the receiver.
Description
Technical Field
The utility model relates to a receiver technical field especially relates to a Ku frequency channel low noise amplifier.
Background
In the field of communication and radar technology application, in order to obtain high-requirement receiving sensitivity, the requirements on related technical indexes of a low-noise amplifier butted at the front end of a mobile phone are very high, particularly, the output power of a transmitter of receiving and transmitting integrated communication equipment and high-power radar equipment is very high, and on the basis of certain receiving and transmitting isolation, the front end of a receiver must also have a function of preventing a signal from being burnt out by feeding in the signal so as to ensure that the receiver is not burnt out.
In the application field of communication and radar technologies, a front-end low-noise amplifier is used as a core component of a receiver, has very high requirements on noise coefficient indexes and linearity, and lacks an input amplitude limiting function.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a Ku frequency channel low noise amplifier in order to solve above-mentioned problem, including rectangular waveguide-microstrip probe transition structure, amplitude limiter, first order low noise amplifier, fixed attenuator, second level low noise amplifier and the microstrip type isolator that links to each other in proper order.
The beneficial effects of the utility model reside in that: the utility model has good low noise characteristic, and can be used as the front end of the receiver to make the receiver obtain higher receiving sensitivity; the anti-interference device has the function of preventing large signals from being burnt out, and can improve the anti-interference capability of the receiver in a strong signal interference environment as the front end of the receiver; the rectangular waveguide-microstrip line probe transition structure converts signals from a waveguide to a planar microstrip line, and is convenient for mixing and integrating with various components of a circuit; the receiver has the characteristic of high linearity, and can obtain better linear working characteristics when being used as the front end of the receiver.
Drawings
FIG. 1 is a schematic diagram of the present invention;
fig. 2 is a schematic diagram of a first stage low noise amplifier.
Detailed Description
The present invention will be further explained with reference to the accompanying drawings:
as shown in fig. 1, the utility model relates to a Ku frequency channel low noise amplifier, including rectangular waveguide-microstrip probe transition structure, amplitude limiter, first order low noise amplifier, fixed attenuator, second level low noise amplifier and the microstrip type isolator that links to each other in proper order.
Further, the first-stage low noise amplifier comprises an input matching network, a transistor and an output matching network which are connected in sequence; the output end of the amplitude limiter is connected with the input end of the input matching network; and the output end of the output matching network is connected with the input end of the fixed attenuator.
Further, the second-stage low-noise amplifier is an MMIC low-noise amplifier.
Furthermore, the rectangular waveguide probe transition structure further comprises a BJ140 rectangular waveguide port connected with the input end of the rectangular waveguide-microstrip probe transition structure.
Furthermore, the microstrip type isolator also comprises an SMA connector connected with the output end of the microstrip type isolator.
The rectangular waveguide-microstrip line probe transition structure converts signals from a waveguide to a planar microstrip line and then performs amplification processing. The limiter can prevent the large signal from burning the internal circuit. The first-stage low-noise amplifier adopts the transistor to carry out input and output matching and has better low-noise characteristic. The fixed attenuator can effectively prevent the first-stage low-noise amplifier and the second-stage low-noise amplifier from self-exciting under the condition of high gain. The second-stage low-noise amplifier can improve the circuit gain and the linearity again by adopting an MMIC chip. The microstrip type isolator can prevent the self-excitation of the internal circuit and obtain excellent output standing wave characteristics.
The utility model has good low noise characteristic, and can be used as the front end of the receiver to make the receiver obtain higher receiving sensitivity; the anti-interference device has the function of preventing large signals from being burnt out, and can improve the anti-interference capability of the receiver in a strong signal interference environment as the front end of the receiver; the rectangular waveguide-microstrip line probe transition structure converts signals from a waveguide to a planar microstrip line, and is convenient for mixing and integrating with various components of a circuit; the receiver has the characteristic of high linearity, and can obtain better linear working characteristics when being used as the front end of the receiver.
The technical scheme of the utility model is not limited to the restriction of above-mentioned specific embodiment, all according to the utility model discloses a technical scheme makes technical deformation, all falls into within the protection scope of the utility model.
Claims (5)
1. A Ku frequency band low noise amplifier is characterized by comprising a rectangular waveguide-microstrip probe transition structure, an amplitude limiter, a first-stage low noise amplifier, a fixed attenuator, a second-stage low noise amplifier and a microstrip type isolator which are sequentially connected.
2. The Ku frequency band low-noise amplifier according to claim 1, wherein the first-stage low-noise amplifier comprises an input matching network, a transistor and an output matching network which are connected in sequence; the output end of the amplitude limiter is connected with the input end of the input matching network; and the output end of the output matching network is connected with the input end of the fixed attenuator.
3. The Ku frequency band low noise amplifier according to claim 1, wherein the second stage low noise amplifier is an MMIC low noise amplifier.
4. The Ku-band low noise amplifier according to claim 1, further comprising a BJ140 rectangular waveguide port connected to an input end of the rectangular waveguide-microstrip probe transition structure.
5. The Ku-band low noise amplifier according to claim 1, further comprising an SMA connector connected to an output of the microstrip-type isolator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921477135.1U CN210225346U (en) | 2019-09-06 | 2019-09-06 | Ku frequency band low noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921477135.1U CN210225346U (en) | 2019-09-06 | 2019-09-06 | Ku frequency band low noise amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210225346U true CN210225346U (en) | 2020-03-31 |
Family
ID=69920203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921477135.1U Expired - Fee Related CN210225346U (en) | 2019-09-06 | 2019-09-06 | Ku frequency band low noise amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210225346U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113904631A (en) * | 2021-10-13 | 2022-01-07 | 西安博瑞集信电子科技有限公司 | Low noise amplifier and low noise amplifier chip |
| CN117118376A (en) * | 2023-10-20 | 2023-11-24 | 成都世源频控技术股份有限公司 | Double-probe type waveguide limiter |
-
2019
- 2019-09-06 CN CN201921477135.1U patent/CN210225346U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113904631A (en) * | 2021-10-13 | 2022-01-07 | 西安博瑞集信电子科技有限公司 | Low noise amplifier and low noise amplifier chip |
| CN117118376A (en) * | 2023-10-20 | 2023-11-24 | 成都世源频控技术股份有限公司 | Double-probe type waveguide limiter |
| CN117118376B (en) * | 2023-10-20 | 2024-02-13 | 成都世源频控技术股份有限公司 | Double-probe type waveguide limiter |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200331 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |