CN210224037U - Embedded OLED display panel - Google Patents

Embedded OLED display panel Download PDF

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Publication number
CN210224037U
CN210224037U CN201920992172.XU CN201920992172U CN210224037U CN 210224037 U CN210224037 U CN 210224037U CN 201920992172 U CN201920992172 U CN 201920992172U CN 210224037 U CN210224037 U CN 210224037U
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layer
via hole
hole
display panel
oled display
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Yuhuai Chen
陈宇怀
Zhiyu Su
苏智昱
Zhijie Huang
黄志杰
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Fujian Huajiacai Co Ltd
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Fujian Huajiacai Co Ltd
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Abstract

The utility model relates to the technical field of microelectronics, in particular to an embedded OLED display panel, through setting up the via hole on gate insulation layer, passivation layer, first flat layer and second flat layer respectively, can increase the transparency of OLED device, make the light transmission performance of device better, and then improve the display effect of OLED display panel; the OLED display panel designed by the scheme can set the touch circuit layer in the panel between the glass substrate and the packaging glass, and the touch module layer is embedded in the packaging glass, so that the thickness of devices can be effectively reduced, the use of various materials such as optical cement can be effectively reduced, the manufacturing cost of the panel can be reduced, the technical requirement and the process difficulty are low, and the signal interference is small.

Description

Embedded OLED display panel
Technical Field
The utility model relates to a microelectronics technical field, in particular to embedded OLED display panel.
Background
With the development of display technology, various new technologies are emerging continuously, the transparent display technology is receiving more and more attention due to the characteristic of the transparent display panel and the unique application thereof, and the thin and transparent display is the trend of future display development.
Currently, the touch technologies applied In the OLED panel are mainly classified into an Out-Cell (Out-Cell) touch technology and an In-Cell (In-Cell) touch technology. The Out-cell (Out-cell) technology is mainly classified into a glass mode and a film mode, and a touch sensor is located between a cover glass and a display module.
The In-Cell embeds the touch module In the OLED panel, so that the glass cost and the laminating cost are saved, the module is light In weight and high In transmittance, and the requirement of the display panel on the quality is met. However, when the touch sensor is embedded in the pixel, a matching touch integrated circuit must be embedded therein, otherwise, an erroneous touch sensing signal or excessive noise is easily caused, and the complexity and difficulty of the manufacturing process are great. The organic layers in the OLED are coated with films by an evaporation method, so that the technical requirement is high, the difficulty is high, and the yield is low.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the technical problem that will solve is: an in-cell OLED display panel is provided.
In order to solve the technical problem, the utility model discloses a technical scheme be:
an embedded OLED display panel comprises a glass layer, wherein a touch electrode layer, a buffer layer, a first metal layer, a gate insulating layer, an active layer, a second metal layer, a passivation layer, a first flat layer, a third metal layer, a second flat layer, a third flat layer and a fourth metal layer are sequentially stacked on the surface of the glass layer, a first via hole is formed in the passivation layer, a second via hole is formed in the first flat layer, the second via hole is opposite to and communicated with the first via hole, the second via hole and the first via hole are filled with the third metal layer, the third metal layer in the first via hole is in contact with one side face, away from the glass layer, of the second metal layer, a third via hole is formed in the second flat layer, a light emitting layer is filled in the third via hole, the light emitting layer is in contact with one side face, away from the glass layer, of the third metal layer, and a fourth via hole is formed in the gate, the passivation layer is further provided with a fifth through hole, the first flat layer is further provided with a sixth through hole, the second flat layer is further provided with a seventh through hole, the sixth through hole, the fifth through hole and the fourth through hole are oppositely arranged and communicated, and fourth metal layers are filled in the seventh through hole, the sixth through hole, the fifth through hole and the fourth through hole.
The beneficial effects of the utility model reside in that:
through the arrangement of the through holes in the gate insulating layer, the passivation layer, the first flat layer and the second flat layer, the transparency of the OLED device can be improved, the light transmission performance of the device is better, and the display effect of the OLED display panel is further improved; the OLED display panel designed by the scheme can set the touch circuit layer in the panel between the glass substrate and the packaging glass, and the touch module layer is embedded in the packaging glass, so that the thickness of devices can be effectively reduced, the use of various materials such as optical cement can be effectively reduced, the manufacturing cost of the panel can be reduced, the technical requirement and the process difficulty are low, and the signal interference is small.
Drawings
Fig. 1 is a schematic structural view of an embedded OLED display panel according to the present invention;
FIG. 2 is a schematic structural diagram of a second embodiment of an in-cell OLED display panel according to the present invention;
fig. 3 is a schematic structural diagram of a third embodiment of an in-cell OLED display panel according to the present invention;
description of reference numerals:
1. a glass layer; 2. a touch electrode layer; 3. a buffer layer; 4. a first metal layer; 5. a gate insulating layer; 6. an active layer; 7. a second metal layer; 8. a passivation layer; 9. a first planar layer; 10. a third metal layer; 11. a second planar layer; 12. a light emitting layer; 13. a third flat layer; 14. a fourth metal layer; 15. and etching the barrier layer.
Detailed Description
In order to explain the technical content, the objects and the effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
The utility model discloses the most crucial design lies in: the transparency of the OLED device is increased by respectively arranging the through holes on the grid insulating layer, the passivation layer, the first flat layer and the second flat layer.
Referring to fig. 1, the present invention provides a technical solution:
an embedded OLED display panel comprises a glass layer, wherein a touch electrode layer, a buffer layer, a first metal layer, a gate insulating layer, an active layer, a second metal layer, a passivation layer, a first flat layer, a third metal layer, a second flat layer, a third flat layer and a fourth metal layer are sequentially stacked on the surface of the glass layer, a first via hole is formed in the passivation layer, a second via hole is formed in the first flat layer, the second via hole is opposite to and communicated with the first via hole, the second via hole and the first via hole are filled with the third metal layer, the third metal layer in the first via hole is in contact with one side face, away from the glass layer, of the second metal layer, a third via hole is formed in the second flat layer, a light emitting layer is filled in the third via hole, the light emitting layer is in contact with one side face, away from the glass layer, of the third metal layer, and a fourth via hole is formed in the gate, the passivation layer is further provided with a fifth through hole, the first flat layer is further provided with a sixth through hole, the second flat layer is further provided with a seventh through hole, the sixth through hole, the fifth through hole and the fourth through hole are oppositely arranged and communicated, and fourth metal layers are filled in the seventh through hole, the sixth through hole, the fifth through hole and the fourth through hole.
From the above description, the beneficial effects of the present invention are:
through the arrangement of the through holes in the gate insulating layer, the passivation layer, the first flat layer and the second flat layer, the transparency of the OLED device can be improved, the light transmission performance of the device is better, and the display effect of the OLED display panel is further improved; the OLED display panel designed by the scheme can set the touch circuit layer in the panel between the glass substrate and the packaging glass, and the touch module layer is embedded in the packaging glass, so that the thickness of devices can be effectively reduced, the use of various materials such as optical cement can be effectively reduced, the manufacturing cost of the panel can be reduced, the technical requirement and the process difficulty are low, and the signal interference is small.
Further, still include the etching barrier layer, the etching barrier layer sets up between gate insulation layer and the passivation layer, a side of etching barrier layer with a side contact that glass layer was kept away from to gate insulation layer, another side that a side of etching barrier layer is relative with a side contact that the passivation layer is close to glass layer, be equipped with the eighth via hole on the etching barrier layer, eighth via hole, seventh via hole, sixth via hole, fifth via hole and fourth via hole set up relatively and communicate with each other, it has the fourth metal layer to fill in the eighth via hole.
As can be seen from the above description, the active layer channel can be protected by providing the etching blocking layer, and the via hole provided on the etching blocking layer can enable the source electrode and the drain electrode to be connected to expose the surface of the active layer for overlapping.
Further, be equipped with the ninth via hole on the buffer layer, ninth via hole, eighth via hole, seventh via hole, sixth via hole, fifth via hole and fourth via hole set up relatively and communicate with each other, it has the fourth metal layer to fill in the ninth via hole, the fourth metal layer in the ninth via hole with the glass layer contacts.
As can be seen from the above description, since the buffer layer serves to flatten the surface of the substrate and reduce the influence of the parasitic capacitance generated by the interaction between the touch electrode layer and the first metal layer, the buffer layer has a relatively large thickness, and the ninth via hole is disposed on the buffer layer, so as to further increase the transmittance of the panel.
Furthermore, at least two tenth via holes are further formed in the etching barrier layer, a second metal layer is filled in the tenth via holes, and the second metal layer in the tenth via holes is in contact with one side face, far away from the glass layer, of the active layer.
Furthermore, in the vertical direction of the embedded OLED display panel, the tenth via hole is arranged corresponding to the position of the active layer.
As can be seen from the above description, the two tenth vias provided on the active layer serve to connect the second metal layer (source and drain) and the active layer. When the grid electrode is at a high level, the TFT device is opened, and an electric signal is transmitted into the active layer through the source electrode through one of the tenth through holes and then transmitted into the drain electrode through the second of the tenth through holes. The etching barrier layer is arranged, so that the active layer channel can be protected, the problem of uneven etching caused by large-area etching can occur if the etching barrier layer in the region except the etching barrier layer above the active layer is removed by an etching mode, and the damage of a film quality composition and a similar grid insulating layer caused by the etching process of the etching barrier layer can be caused. By designing the two tenth through holes, the problem of unnecessary process due to large-area etching can be avoided, and the process is optimized.
Referring to fig. 1, a first embodiment of the present invention is:
an embedded OLED display panel comprises a glass layer 1, wherein a touch electrode layer 2, a buffer layer 3, a first metal layer 4, a grid insulation layer 5, an active layer 6, a second metal layer 7, a passivation layer 8, a first flat layer 9, a third metal layer 10, a second flat layer 11, a third flat layer 13 and a fourth metal layer 14 are sequentially stacked on the surface of the glass layer 1, a first through hole is formed in the passivation layer 8, a second through hole is formed in the first flat layer 9, the second through hole is opposite to and communicated with the first through hole, the second through hole and the first through hole are filled with the third metal layer 10, the third metal layer 10 in the first through hole is in contact with one side surface, far away from the glass layer 1, of the second metal layer 7, a third through hole is formed in the second flat layer 11, a light emitting layer 12 is filled in the third through hole, and the light emitting layer 12 is in contact with one side surface, far away from the glass layer 1, of the third metal layer 10, the gate insulating layer 5 is provided with a fourth via hole, the passivation layer 8 is further provided with a fifth via hole, the first flat layer 9 is further provided with a sixth via hole, the second flat layer 11 is further provided with a seventh via hole, the sixth via hole, the fifth via hole and the fourth via hole are oppositely arranged and communicated, and fourth metal layers 14 are filled in the seventh via hole, the sixth via hole, the fifth via hole and the fourth via hole.
The touch electrode layer 2 may be made of transparent electrode materials such as Indium Tin Oxide (ITO) and nano silver wires.
The buffer layer 3 is disposed to planarize the surface of the glass layer 1 and reduce touch signal noise.
The active layer 6 may be made of amorphous silicon (α -Si), polysilicon, Indium Gallium Zinc Oxide (IGZO), and other metal oxides.
The passivation layer 8 is provided to protect the display device from external water or oxygen.
Referring to fig. 2, the second embodiment of the present invention is:
the difference between the second embodiment and the first embodiment is that: embedded OLED display panel still includes etching barrier layer 15, etching barrier layer 15 sets up between gate insulation layer 5 and passivation layer 8, etching barrier layer 15 a side with glass layer 1's a side contact is kept away from to gate insulation layer 5, etching barrier layer 15 a relative another side with passivation layer 8 is close to glass layer 1's a side contact, be equipped with the eighth via hole on etching barrier layer 15, eighth via hole, seventh via hole, sixth via hole, fifth via hole and fourth via hole set up relatively and communicate with each other, it has fourth metal layer 14 to fill in the eighth via hole.
Referring to fig. 3, a third embodiment of the present invention is:
the difference between the third embodiment and the second embodiment is that: be equipped with the ninth via hole on buffer layer 3, ninth via hole, eighth via hole, seventh via hole, sixth via hole, fifth via hole and fourth via hole set up relatively and communicate with each other, it has fourth metal layer 14 to fill in the ninth via hole, fourth metal layer 14 in the ninth via hole with glass layer 1 contacts.
And two tenth via holes are further formed in the etching barrier layer 15, the tenth via holes are filled with second metal layers 7, and the second metal layers 7 in the tenth via holes are in contact with one side face, far away from the glass layer 1, of the active layer 6.
In the vertical direction of the embedded OLED display panel, the tenth via hole is arranged corresponding to the position of the active layer 6.
To sum up, the utility model provides an embedded OLED display panel, through set up the via hole on grid insulating layer, passivation layer, first flat layer and second flat layer respectively, can increase the transparency of OLED device, make the light transmission performance of device better, and then improve OLED display panel's display effect; the OLED display panel designed by the scheme can set the touch circuit layer in the panel between the glass substrate and the packaging glass, and the touch module layer is embedded in the packaging glass, so that the thickness of devices can be effectively reduced, the use of various materials such as optical cement can be effectively reduced, the manufacturing cost of the panel can be reduced, the technical requirement and the process difficulty are low, and the signal interference is small.
The above mentioned is only the embodiment of the present invention, and not the limitation of the patent scope of the present invention, all the equivalent transformations made by the contents of the specification and the drawings, or the direct or indirect application in the related technical field, are included in the patent protection scope of the present invention.

Claims (5)

1. An embedded OLED display panel comprises a glass layer, wherein a touch electrode layer, a buffer layer, a first metal layer, a grid insulation layer, an active layer, a second metal layer, a passivation layer, a first flat layer, a third metal layer, a second flat layer, a third flat layer and a fourth metal layer are sequentially stacked on the surface of the glass layer, a first via hole is formed in the passivation layer, a second via hole is formed in the first flat layer, the second via hole is opposite to and communicated with the first via hole, the second via hole and the first via hole are filled with the third metal layer, the third metal layer in the first via hole is in contact with one side face, away from the glass layer, of the second metal layer, a third via hole is formed in the second flat layer, a light emitting layer is filled in the third via hole, and the light emitting layer is in contact with one side face, away from the glass layer, of the third metal layer, the gate structure is characterized in that a fourth through hole is formed in the gate insulating layer, a fifth through hole is further formed in the passivation layer, a sixth through hole is further formed in the first flat layer, a seventh through hole is further formed in the second flat layer, the seventh through hole, the sixth through hole, the fifth through hole and the fourth through hole are oppositely arranged and communicated, and fourth metal layers are filled in the seventh through hole, the sixth through hole, the fifth through hole and the fourth through hole.
2. The embedded OLED display panel of claim 1, further comprising an etching barrier layer, wherein the etching barrier layer is arranged between the gate insulating layer and the passivation layer, one side of the etching barrier layer is in contact with one side of the gate insulating layer far away from the glass layer, the other side, opposite to the one side, of the etching barrier layer is in contact with one side, close to the glass layer, of the passivation layer, an eighth via hole is formed in the etching barrier layer, the eighth via hole, the seventh via hole, the sixth via hole, the fifth via hole and the fourth via hole are oppositely arranged and communicated, and a fourth metal layer is filled in the eighth via hole.
3. The in-cell OLED display panel of claim 2, wherein the buffer layer is provided with a ninth via hole, the eighth via hole, the seventh via hole, the sixth via hole, the fifth via hole and the fourth via hole are oppositely arranged and communicated, the ninth via hole is filled with a fourth metal layer, and the fourth metal layer in the ninth via hole is in contact with the glass layer.
4. The in-cell OLED display panel of claim 2, wherein the etch stop layer further comprises at least two tenth vias filled with a second metal layer, the second metal layer of the tenth vias contacting a side of the active layer away from the glass layer.
5. The in-cell OLED display panel according to claim 4, wherein the tenth via is disposed corresponding to the active layer in a vertical direction of the in-cell OLED display panel.
CN201920992172.XU 2019-06-28 2019-06-28 Embedded OLED display panel Active CN210224037U (en)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110473897A (en) * 2019-06-28 2019-11-19 福建华佳彩有限公司 A kind of embedded OLED display panel and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110473897A (en) * 2019-06-28 2019-11-19 福建华佳彩有限公司 A kind of embedded OLED display panel and preparation method thereof
CN110473897B (en) * 2019-06-28 2024-02-27 福建华佳彩有限公司 Embedded OLED display panel and manufacturing method thereof

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